FS70UM-06 Datasheet
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FS70UM-06
High-Speed Switching Use
Nch Power MOS FET
REJ03G1433-0200
(Previous: MEJ02G0097-0101)
Rev.2.00
Aug 07, 2006
Features
•
•
•
•
•
Drive voltage : 10 V
VDSS : 60 V
rDS(ON) (max) : 7.5 mΩ
ID : 70 A
Integrated Fast Recovery Diode (TYP.) : 85 ns
Outline
RENESAS Package code: PRSS0004AA-A
(Package name: TO-220)
2, 4
4
1.
2.
3.
4.
1
1 2
Gate
Drain
Source
Drain
3
3
Applications
Motor control, Lamp control, Solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Symbol
Ratings
Unit
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
60
±20
70
280
70
70
280
125
– 55 to +150
– 55 to +150
2.0
V
V
A
A
A
A
A
W
°C
°C
g
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Rev.2.00
Aug 07, 2006
page 1 of 6
Conditions
VGS = 0 V
VDS = 0 V
L = 100 µH
Typical value
FS70UM-06
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Rev.2.00
Aug 07, 2006
Symbol
V(BR)DSS
IGSS
IDSS
VGS(th)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Rth(ch-c)
trr
page 2 of 6
Min
60
—
—
2.0
—
—
50
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
3.0
5.7
0.200
70
6540
1640
790
95
195
290
210
1.0
—
85
Max
—
±0.1
0.1
4.0
7.5
0.263
—
—
—
—
—
—
—
—
1.5
1.0
—
Unit
V
µA
mA
V
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Test Conditions
ID = 1 mA, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 60 V, VGS = 0 V
ID = 1 mA, VDS = 10 V
ID = 35 A, VGS = 10 V
ID = 35 A, VGS = 10 V
ID = 35 A, VDS = 10 V
VDS = 10 V, VGS = 0 V,
f = 1MHz
VDD = 30 V, ID = 35 A,
VGS = 10 V,
RGEN = RGS = 50 Ω
IS = 35 A, VGS = 0 V
Channel to case
IS = 70 A, dis/dt = –100 A/µs
FS70UM-06
Performance Curves
Maximum Safe Operating Area
Power Dissipation Derating Curve
3
2
160
Drain Current ID (A)
Power Dissipation PD (W)
200
120
80
40
0
0
50
100
150
102
7
5
3
2
1ms
101
7
5
3
2
DC
100µs
100
7
5
3
200
tw = 10µs
Tc = 25°C
Single Pulse
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3
Case Temperature Tc (°C)
Drain-Source Voltage VDS (V)
Output Characteristics (Typical)
Output Characteristics (Typical)
VGS = 20V 10V
50
Drain Current ID (A)
8V
8V 6V
6V
80
Drain Current ID (A)
100
PD = 125W
60
VGS = 20V 10V
Tc = 25°C
Pulse Test
5V
40
20
5V
40
Tc = 25°C
Pulse Test
30
4.5V
20
10
4V
4V
0
0.4
0.8
1.2
1.6
0.4
0.6
0.8
1.0
On-State Voltage vs.
Gate-Source Voltage (Typical)
On-State Resistance vs.
Drain Current (Typical)
0.8
ID = 140A
0.6
100A
0.4
70A
0.2
30A
4
8
12
16
Gate-Source Voltage VGS (V)
Rev.2.00
0.2
Drain-Source Voltage VDS (V)
Tc = 25°C
Pulse Test
0
0
Drain-Source Voltage VDS (V)
1.0
0
0
2.0
Aug 07, 2006
page 3 of 6
20
Drain-Source On-State Resistance rDS(ON) (mΩ)
Drain-Source On-State Voltage VDS(ON) (V)
0
10
Tc = 25°C
Pulse Test
8
6
VGS = 10V
20V
4
2
0
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2
Drain Current ID (A)
FS70UM-06
Forward Transfer Admittance vs.
Drain Current (Typical)
Tc = 25°C
VDS = 10V
Pulse Test
80
60
40
20
0
0
4
8
12
20
TC = 25°C
75°C
125°C
101
7
5
4
3
2
100 0
10
2 3 4 5 7 101
2 3 4 5 7 102
Switching Characteristics (Typical)
Tch = 25°C
f = 1MHz
VGS = 0V
104
7
5
3
2
Ciss
103
7
5
4
3
td(off)
tf
2
tr
102
7
5
4
3
td(on)
Tch = 25°C
VDD = 30V
VGS = 10V
RGEN = RGS = 50Ω
2
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
Drain-Source Voltage VDS (V)
Drain Current ID (A)
Gate-Source Voltage vs.
Gate Charge (Typical)
Source-Drain Diode Forward
Characteristics (Typical)
20
100
VGS = 0V
Pulse Test
Tch = 25°C
ID = 70A
Source Current IS (A)
Gate-Source Voltage VGS (V)
2
Capacitance vs.
Drain-Source Voltage (Typical)
Coss
103
7
5
Crss
3
–1
0
1
10 2 3 5 7 10 2 3 5 7 10 2 3 5 7 102
16
VDS = 10V
12
8
20V
40V
4
0
40
80
120
160
Gate Charge Qg (nC)
Rev.2.00
VDS = 10V
Pulse Test
Drain Current ID (A)
105
7
5
3
2
0
102
7
5
4
3
Gate-Source Voltage VGS (V)
3
2
Capacitance C (pF)
16
Switching Time (ns)
Drain Current ID (A)
100
Forward Transfer Admittance | yfs | (S)
Transfer Characteristics (Typical)
Aug 07, 2006
page 4 of 6
100
80
60 TC = 125°C
40
75°C
25°C
20
0
0
0.4
0.8
1.2
1.6
Source-Drain Voltage VSD (V)
2.0
VGS = 10V
ID = 35A
Pulse Test
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
5.0
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
–50
0
100
150
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
Transient Thermal Impedance Characteristics
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
–50
0
50
100
150
101
7
5
3
2
D = 1.0
100
7 0.5
5
3 0.2
2 0.1
PDM
10–1
tw
7
5
3
2
T
0.05
0.02
0.01
Single Pulse
D= tw
T
10–2 –4
10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
Channel Temperature Tch (°C)
Pulse Width tw (s)
Switching Time Measurement Circuit
Switching Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RGEN
RL
Vin
Vout
10%
10%
10%
VDD
RGS
90%
td(on)
Rev.2.00
50
Channel Temperature Tch (°C)
1.4
0.4
Threshold Voltage vs.
Channel Temperature (Typical)
Gate-Source Threshold Voltage VGS(th) (V)
101
7
5
4
3
Transient Thermal Impedance Zth(ch–c) (°C/W)
Drain-Source On-State Resistance rDS(ON) (25°C)
On-State Resistance vs.
Channel Temperature (Typical)
Drain-Source Breakdown Voltage V(BR)DSS (25°C)
Drain-Source Breakdown Voltage V(BR)DSS (t°C)
Drain-Source On-State Resistance rDS(ON) (t°C)
FS70UM-06
Aug 07, 2006
page 5 of 6
tr
90%
td(off)
tf
FS70UM-06
Package Dimensions
JEITA Package Code
SC-46
Package Name
TO-220
RENESAS Code
PRSS0004AA-A
Previous Code

MASS[Typ.]
2.0g
10.5Max
Unit: mm
4.5
φ3.6
3.8Max
12.5Min
16Max
7.0
3.2
1.3
1.0
0.8
0.5
2.54
2.6
4.5Max
2.54
Order Code
Lead form
Standard packing
Quantity
Standard order code
Straight type
Static electricity prevention bag
100 Type name
Lead form
Plastic Magazine (Tube)
50 Type name – Lead forming code
Note : Please confirm the specification about the shipping in detail.
Rev.2.00
Aug 07, 2006
page 6 of 6
Standard order
code example
FS70UM-06
FS70UM-06-A8
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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© 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0
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