datasheet for FDS8842NZ by Fairchild Semiconductors

datasheet for FDS8842NZ by Fairchild Semiconductors
FDS8842NZ
N-Channel PowerTrench® MOSFET
40 V, 14.9 A, 7.0 mΩ
Features
General Description
̈ Max rDS(on) = 7.0 mΩ at VGS = 10 V, ID = 14.9 A
The FDS8842NZ has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance.
̈ Max rDS(on) = 11.6 mΩ at VGS = 4.5 V, ID = 11.6 A
̈ HBM ESD protection level of 4.4 kV typical(note 3)
Applications
̈ High performance trench technology for extremely low rDS(on)
and fast switching
̈ Synchronous Buck for Notebook Vcore and Server
̈ High power and current handling capability
̈ Notebook Battery
̈ Termination is Lead-free and RoHS Compliant
̈ Load Switch
D
D
D
G
D
S
D
S
D
S
D
D
G
SO-8
S
S
Pin 1
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
VGS
ID
Parameter
Ratings
40
Units
V
Gate to Source Voltage
±20
V
Drain Current -Continuous
14.9
-Pulsed
93
Single Pulse Avalanche Energy
EAS
PD
TJ, TSTG
(Note 4)
253
Power Dissipation
TA = 25 °C
(Note 1a)
2.5
Power Dissipation
TA = 25 °C
(Note 1b)
1.0
Operating and Storage Junction Temperature Range
-55 to +150
A
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
(Note 1)
25
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDS8842NZ
Device
FDS8842NZ
©2009 Fairchild Semiconductor Corporation
FDS8842NZ Rev.C
Package
SO8
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
www.fairchildsemi.com
FDS8842NZ N-Channel Power Trench® MOSFET
February 2009
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 32 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±10
μA
3.0
V
40
V
35
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 14.9 A
5.6
7.0
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 11.6 A
6.7
11.6
VGS = 10 V, ID = 14.9 A, TJ =125 °C
8.9
11.1
VDS = 5 V, ID = 14.9 A
111
gFS
Forward Transconductance
1.0
1.9
-6
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
f = 1 MHz
2890
3845
pF
340
455
pF
220
330
pF
Ω
0.8
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0 V to 10 V
Qg
Total Gate Charge
VGS = 0 V to 5 V
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 20 V, ID = 14.9 A,
VGS = 10 V, RGEN = 6 Ω
VDD = 20 V,
ID = 14.9 A
13
23
7
14
ns
ns
34
54
ns
5
10
ns
52
73
nC
27
38
nC
8.6
nC
9.7
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 14.9 A
0.8
1.2
VGS = 0 V, IS = 2.1 A
0.7
1.2
IF = 14.9 A, di/dt = 100 A/μs
V
26
42
ns
15
27
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b) 125 °C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.
4. Starting TJ = 25 °C, L = 3 mH, I AS = 13 A, VDD = 40 V, VGS = 10 V.
©2009 Fairchild Semiconductor Corporation
FDS8842NZ Rev.C
2
www.fairchildsemi.com
FDS8842NZ N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
60
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 6 V
50
ID, DRAIN CURRENT (A)
5
VGS = 10 V
VGS = 4.5 V
VGS = 3.5 V
40
30
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 4 V
20
10
VGS = 3 V
0
0
0.3
0.6
0.9
1.2
4
VGS = 3.5 V
3
2
VGS = 4.5 V
VGS = 6 V
VGS = 10 V
0
1.5
0
10
20
30
40
50
60
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
20
ID = 14.9 A
VGS = 10 V
rDS(on), DRAIN TO
1.6
1.4
1.2
1.0
0.8
0.6
-75
-50
SOURCE ON-RESISTANCE ( mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 4 V
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
15
ID = 14.9 A
TJ = 125 oC
10
5
TJ = 25 oC
0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ( oC)
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
Figure 3. Normalized On- Resistance
vs Junction Temperature
60
60
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
50
ID, DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3 V
VDS = 5 V
40
30
TJ = 150 oC
20
TJ = 25 oC
10
TJ =
-55 oC
1
2
3
4
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 150 oC
TJ = 25 oC
1
TJ = -55 oC
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
Figure 5. Transfer Characteristics
©2009 Fairchild Semiconductor Corporation
FDS8842NZ Rev.C
10
0.1
0.2
0
0
VGS = 0 V
3
www.fairchildsemi.com
FDS8842NZ N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
5000
ID = 14.9 A
8
Ciss
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 15 V
6
VDD = 20 V
VDD = 25 V
4
1000
Coss
2
f = 1 MHz
VGS = 0 V
0
10
20
30
40
50
60
1
10
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
30
-3
10
Ig, GATE LEAKAGE CURRENT (A)
IAS, AVALANCHE CURRENT (A)
Crss
100
0.1
0
10
TJ =
125 oC
TJ = 25 oC
TJ = 100 oC
1
0.001
0.01
0.1
1
10
100
VGS = 0 V
-5
10
TJ = 125 oC
TJ = 25 oC
-7
10
-9
1000
10
tAV, TIME IN AVALANCHE (ms)
0
5
10
15
20
25
30
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Igss vs Vgs
P( PK) , PEAK TRANSIENT POWER (W)
100
ID, DRAIN CURRENT (A)
1 ms
10
10 ms
1
0.1
100 ms
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
1s
RθJA = 125 oC/W
10 s
o
DC
TA = 25 C
0.01
0.01
0.1
1
10
100 200
VGS = 10 V
SINGLE PULSE
RθJA = 125 oC/W
100
TA = 25 oC
10
1
0.5
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2009 Fairchild Semiconductor Corporation
FDS8842NZ Rev.C
2000
1000
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDS8842NZ N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 125 C/W
0.001
0.0005
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
FDS8842NZ Rev.C
5
www.fairchildsemi.com
FDS8842NZ N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
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Preliminary
First Production
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Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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The datasheet is for reference information only.
Rev. I39
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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