64 Mbit (4M x 16-bit), 1.8 V, Multiplexed, Burst, MirrorBit Flash S29VS064R

64 Mbit (4M x 16-bit), 1.8 V, Multiplexed, Burst, MirrorBit Flash S29VS064R
S29VS064R
S29XS064R
64 Mbit (4M x 16-bit), 1.8 V, Multiplexed,
Burst, MirrorBit® Flash
Distinctive Characteristics
 Single 1.8 volt read, program and erase
(1.7 to 1.95 volt)
Security Features
 VersatileIO™ Feature
– Device generates data output voltages and tolerates data input
voltages as determined by the voltage on the VCCQ pin
– 1.8 V compatible I/O signals
 Address and Data Interface Options
– Address and Data Multiplexed for reduced I/O count
(ADM) S29VS-R
– Address-High, Address-Low, Data Multiplexed for minimum I/O
count (AADM) S29XS-R
 Simultaneous Read/Write operation
– Data can be continuously read from one bank while executing
erase/program functions in other bank
– Zero latency between read and write operations
 Burst length
– Continuous linear burst
– 8/16 word linear burst with wrap around
 Dynamic Protection Bit (DYB)
– A command sector protection method to lock combinations of
individual sectors to prevent program or erase operations within
that sector
– Sectors can be locked and unlocked in-system at VCC level
 Hardware Sector Protection
– All sectors locked when VPP = VIL
 Handshaking feature
– Provides host system with minimum possible latency by
monitoring RDY
 Supports Common Flash Memory
Interface (CFI)
 Manufactured on 65 nm MirrorBit® process technology
 Cycling endurance: 100,000 cycles per sector typical
 Data retention: 10 years typical
 Secured Silicon Sector region
– 256 words accessible through a command sequence, 128 words
for the Factory Secured Silicon Sector and 128 words for the
Customer Secured Silicon Sector.
 Sector Architecture
– Four 8 kword sectors in upper-most address range
– One hundred twenty-seven 32 kword sectors
– Four banks
 Data# Polling and toggle bits
– Provides a software method of detecting program and erase
operation completion
 Erase Suspend/Resume
– Suspends an erase operation to read data from, or program data
to, a sector that is not being erased, then resumes the erase
operation
 Program Suspend/Resume
– Suspends a programming operation to read data from a sector
other than the one being programmed, then resume the
programming operation
 Packages
– 44-ball Very Thin FBGA
Performance Characteristics
Read Access Times
Typical Program & Erase Times
Speed Option (MHz)
108
Single Word Programming
170 µs
Max. Synch. Latency, ns (tIACC)
80
Effective Write Buffer Programming (VCC) Per Word
14.1 µs
Max. Synch. Burst Access, ns (tBACC)
7.6
Effective Write Buffer Programming (VPP) Per Word
Max. Asynch. Access Time, ns (tACC)
80
Sector Erase (8 kword Sector)
350 ms
9 µs
Max OE# Access Time, ns (tOE)
15
Sector Erase (32 kword Sector)
800 ms
Current Consumption (typical values)
Continuous Burst Read @ 108 MHz
32 mA
Simultaneous Operation @ 108 MHz
71 mA
Program/Erase
30 mA
Standby Mode
20 µA
Cypress Semiconductor Corporation
Document Number: 002-00949 Rev. *G
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised December 17, 2015
S29VS064R
S29XS064R
1. General Description
The S29V/XS064R are 64 Mb, 1.8 Volt-only, Simultaneous Read/Write, Burst Mode flash memory devices, organized as 4,194,304
words of 16 bits each. These devices use a single VCC of 1.70 to 1.95 V to read, program, and erase the memory array. A 9.0-volt
VPP, may be used for faster program performance if desired. These devices can also be programmed in standard
EPROM programmers.
The devices operate within the temperature range of -25°C to +85°C, and are offered in Very Thin FBGA packages. The devices are
also available in the temperature range of -40°C to +85°C. Please refer to the Specification Supplement with Publication Number
S29VS064R_XS064R_SP for specification differences for devices offered in the -45°C to +85°C temperature range.
1.1
Simultaneous Read/Write Operations with Zero Latency
The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into four banks. The
device allows a host system to program or erase in one bank, then immediately and simultaneously read from another bank, with
zero latency. This releases the system from waiting for the completion of program or erase operations.
The VersatileIO™ (VIO) control allows the host system to set the voltage levels that the device generates at its data outputs and the
voltages tolerated at its data inputs to the same voltage level that is asserted on the VCCQ pin.
The devices use Chip Enable (CE#), Write Enable (WE#), Address Valid (AVD#) and Output Enable (OE#) to control asynchronous
read and write operations. For burst operations, the devices additionally require Ready (RDY) and Clock (CLK). This implementation
allows easy interface with minimal glue logic to microprocessors/microcontrollers for high performance read operations.
The devices offer complete compatibility with the JEDEC 42.4 single-power-supply flash command set standard. Commands
are written to the command register using standard microprocessor write timings. Reading data out of the device are similar to
reading from other flash or EPROM devices.
The host system can detect whether a program or erase operation is complete by using the device status bit DQ7 (Data# Polling)
and DQ6/DQ2 (toggle bits). After a program or erase cycle has been completed, the device automatically returns to reading array
data.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other
sectors. The devices are fully erased when shipped from the factory.
Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power
transitions. The devices also offers another type of data protection at the sector level. When VPP is at VIL, all sectors are locked.
The devices offer two power-saving features. When addresses have been stable for a specified amount of time, the device enters
the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in
both modes.
Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm - an
internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Additionally, Write Buffer
Programming is available on this family of devices. This feature provides superior programming performance by grouping locations
being programmed.
Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm - an internal
algorithm that automatically preprograms the array (if it is not already fully programmed) before executing the erase operation.
During erase, the device automatically times the erase pulse widths and verifies proper cell margin.
The Program Suspend/Program Resume feature enables the user to put program on hold to read data from any sector that is not
selected for programming. If a read is needed from the Dynamic Protection area, or the CFI area, after an program suspend, then
the user must use the proper command sequence to enter and exit this region. The program suspend/resume functionality is also
available when programming in erase suspend (1 level depth only).
The Erase Suspend/Erase Resume feature enables the user to put erase on hold to read data from, or program data to, any sector
that is not selected for erasure. True background erase can thus be achieved. If a read is needed from the Dynamic Protection area,
or the CFI area, after an erase suspend, then the user must use the proper command sequence to enter and exit this region.
The hardware RESET# pin terminates any operation in progress and resets the internal state machine to reading array data. The
RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system
microprocessor to read boot-up firmware from the flash memory device.
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S29VS064R
S29XS064R
The host system can detect whether a memory array program or erase operation is complete by using the device status bit DQ7
(Data# Polling), DQ6/DQ2 (toggle bits), DQ5 (exceeded timing limit), DQ3 (sector erase start timeout state indicator), and DQ1 (write
to buffer abort). After a program or erase cycle has been completed, the device automatically returns to reading array data.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other
sectors. The device is fully erased when shipped from the factory.
Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power
transitions. The device also offers another type of data protection at the sector level.
When the VPP pin = VIL, the entire flash memory array is protected.
Spansion Inc. flash technology combines years of flash memory manufacturing experience to produce the highest levels of quality,
reliability and cost effectiveness. The device electrically erases all bits within a sector. The data is programmed using hot electron
injection.
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S29VS064R
S29XS064R
Contents
1.
1.1
General Description..................................................... 2
Simultaneous Read/Write Operations with Zero Latency 2
2.
Block Diagrams............................................................ 5
3.
Connection Diagram.................................................... 7
4.
Physical Dimensions ................................................... 8
5.
Input/Output Descriptions........................................... 9
6.
Logic Symbol ............................................................... 9
7.
7.1
Ordering Information ................................................. 10
Valid Combinations ...................................................... 10
8.
8.1
8.2
8.3
Address/Data Configuration (Interface) Modes.......
ADM Interface Mode (S29VS064R).............................
AADM Interface Mode (S29XS064R) ..........................
Default Access Mode ...................................................
11
11
11
12
9.
9.1
9.2
9.3
12
13
13
9.8
9.9
9.10
9.11
9.12
9.13
9.14
9.15
9.16
9.17
9.18
9.19
9.20
9.21
9.22
Device Bus Operations..............................................
VersatileIO™ (VIO) Control ..........................................
Asynchronous Read.....................................................
Synchronous (Burst) Read Mode and Configuration
Register........................................................................
Programmable Wait State............................................
Configuration Register .................................................
Handshaking Feature...................................................
Simultaneous Read/Write Operations with Zero
Latency ........................................................................
Writing Commands/Command Sequences..................
Accelerated Program and Erase Operations ...............
Write Buffer Programming Operation...........................
Autoselect Mode ..........................................................
Sector Protection .........................................................
Hardware Data Protection Mode..................................
Low VCC Write Inhibit..................................................
Write Pulse “Glitch” Protection.....................................
Logical Inhibit ...............................................................
Lock Register ...............................................................
Standby Mode..............................................................
Automatic Sleep Mode.................................................
RESET#: Hardware Reset Input ..................................
Output Disable Mode ...................................................
Secured Silicon Sector Flash Memory Region ............
10.
Common Flash Memory Interface (CFI) ................... 23
11.
11.1
11.2
11.3
Command Definitions................................................
Reading Array Data .....................................................
Set Configuration Register Command Sequence ........
Read Configuration Register Command Sequence.....
9.4
9.5
9.6
9.7
13
17
17
17
17
17
17
18
19
19
19
20
20
20
20
20
20
21
21
21
12.5 Accelerated Program .................................................... 32
12.6 Write Buffer Programming Command Sequence.......... 33
12.7 Chip Erase Command Sequence ................................. 36
12.8 Sector Erase Command Sequence .............................. 36
12.9 Erase Suspend/Erase Resume Commands ................. 37
12.10Program Suspend/Program Resume Commands ........ 38
12.11Volatile Sector Protection Command Set ..................... 38
13.
13.1
13.2
13.3
13.4
13.5
13.6
13.7
13.8
Write Operation Status ............................................... 41
DQ7: Data# Polling ....................................................... 41
RDY: Ready .................................................................. 42
DQ6: Toggle Bit I .......................................................... 43
DQ2: Toggle Bit II ......................................................... 43
Reading Toggle Bits DQ6/DQ2..................................... 45
DQ5: Exceeded Timing Limits ...................................... 45
DQ3: Sector Erase Start Timeout State Indicator ......... 45
DQ1: Write to Buffer Abort ............................................ 45
14.
Absolute Maximum Ratings....................................... 46
15.
Operating Ranges ....................................................... 47
16.
DC Characteristics...................................................... 48
17.
Test Conditions ........................................................... 49
18. Key to Switching Waveforms..................................... 49
18.1 Switching Waveforms ................................................... 49
19.
19.1
19.2
19.3
19.4
19.5
AC Characteristics...................................................... 50
VCC Power-up ............................................................... 50
Synchronous/Burst Read .............................................. 51
Asynchronous Read ..................................................... 53
Hardware Reset (RESET#)........................................... 53
Erase/Program Operations ........................................... 54
20.
Erase and Programming Performance ..................... 60
21.
BGA Ball Capacitance ................................................ 60
22.
Revision History.......................................................... 61
27
27
27
27
12. Configuration Register .............................................. 30
12.1 Reset Command .......................................................... 30
12.2 Autoselect Command Sequence ................................. 31
12.3 Enter/Exit Secured Silicon Sector Command
Sequence..................................................................... 31
12.4 Program Command Sequence .................................... 32
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S29VS064R
S29XS064R
2.
Block Diagrams
VCCQ
VCC
VSS
A/DQ15–A/DQ0
RDY
Buffer
RDY
Erase Voltage
Generator
VPP
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
VCC
Detector
AVD#
CLK
Burst
State
Control
Timer
Burst
Address
Counter
A/DQ15–A/DQ0
Amax–A16
Address Latch
WE#
RESET#
Input/Output
Buffers
Data
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
Amax–A0
Note:
Amax indicates the highest order address bit. Amax equals A21 for S29VS/XS064R.
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Page 5 of 63
S29VS064R
S29XS064R
Bank Address
Y-Decoder
VCCQ
VCC
VSS
Vssq
Bank 0
Latches and
Control Logic
Block Diagram of Simultaneous Operation Circuit
DQ15–DQ0
Amax–A0
X-Decoder
OE#
VPP
AVD#
CLK
STATE
CONTROL
&
COMMAND
REGISTER
DQ15–DQ0
Amax–A0
CE#
DQ15–DQ0
X-Decoder
OE#
DQ15–
DQ0
Status
RDY
Control
Bank Address
Amax–A0
Y-Decoder
X-Decoder
Amax–A0
Bank n-1
Bank Address
Y-Decoder
X-Decoder
Bank n
OE#
Latches and
Control Logic
Amax–A0
WE#
DQ15–DQ0
OE#
Latches and
Control Logic
RESET#
Bank 1
Latches and
Control Logic
Y-Decoder
Bank Address
DQ15–DQ0
Notes:
1. A15–A0 are multiplexed with DQ15–DQ0.
2. Amax indicates the highest order address bit.
3. n = 3.
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S29VS064R
S29XS064R
3.
Connection Diagram
S29VS/XS064R
44-Ball Very Thin FBGA
Top View, Balls Facing Down
1
2
3
4
5
6
7
8
9
10
11
12
13
14
A
NC
NC
B
C
RDY
A21
VSS
CLK
VCC
WE#
VPP
A19
A17
NC
VCCQ
A16
A20
AVD#
NC
RESET#
NC
A18
CE#
VSSQ
VSS
A/DQ7
A/DQ6
A/DQ13 A/DQ12
A/DQ3
A/DQ2
A/DQ9
A/DQ8
OE#
A/DQ15 A/DQ14
VSSQ
A/DQ5
A/DQ11 A/DQ10
VCCQ
A/DQ1
A/DQ0
D
E
F
A/DQ4
G
H
NC
NC
Special Package Handling Instructions
Special handling is required for flash memory products in FBGA packages.The package and/or data integrity may be compromised
if the package body is exposed to temperatures above 150C for prolonged periods of time.
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Page 7 of 63
S29VS064R
S29XS064R
4.
Physical Dimensions
VDL044—44-Ball Very Thin Fine-Pitch Ball Grid Array (FBGA) 7.5 x5.0 mm Package
NOTES:
PACKAGE
VDL 044
JEDEC
N/A
DxE
7.50 mm x 5.00 mm
PACKAGE
SYMBOL
MIN
NOTE
NOM
MAX
A
---
---
1.00
A1
0.18
---
---
A2
0.62
---
0.74
e REPRESENTS THE SOLDER BALL GRID PITCH.
SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D"
DIRECTION.
BODY THICKNESS
BODY SIZE
BODY SIZE
D1
4.50 BSC
MATRIX FOOTPRINT
E1
1.50 BSC
MATRIX FOOTPRINT
MD
10
MATRIX SIZE D DIRECTION
ME
4
MATRIX SIZE E DIRECTION
44
BALL POSITION DESIGNATION PER JESD 95-1,
SPP-010 (EXCEPT AS NOTED).
5.
5.00 BSC
0.30
ALL DIMENSIONS ARE IN MILLIMETERS.
3.
4.
E
0.25
2.
PROFILE
7.50 BSC
n
DIMENSIONING AND TOLERANCING METHODS PER
ASME Y14.5M-1994.
BALL HEIGHT
D
Øb
1.
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE
"E" DIRECTION.
n IS THE NUMBER OF SOLDER BALLS.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A
AND B AND DEFINE THE POSITION OF THE CENTER SOLDER
BALL IN THE OUTER ROW.
BALL COUNT
0.35
e
0.50 BSC
BALL PITCH
SE / SD
0.25 BSC
BALL PITCH
NONE
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE
OUTER ROW SD OR SE = 0.000.
BALL DIAMETER
DEPOPULATED SOLDER BALLS
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE
OUTER ROW, SD OR SE = e/2
8.
NOT USED.
9.
"+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
3697 \ f16-038.27 \ 6.17.8
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S29VS064R
S29XS064R
5.
Input/Output Descriptions
Signal
Description
A21-A16
Address Inputs.
A/DQ15–A/DQ0
Multiplexed Address/Data input/output.
CE#
Chip Enable Input. Asynchronous relative to CLK for the Burst mode.
OE#
Output Enable Input. Asynchronous relative to CLK for the Burst mode.
WE#
Write Enable Input.
VCC
Device Power Supply (1.70 V–1.95 V).
VCCQ
Input/Output Power Supply (1.70 V–1.95 V).
VSS
Ground.
VSSQ
Input/Output Ground.
NC
Not Connected. No device internal signal is connected to the package connector nor is there any future plan to
use the connector for a signal. The connection may safely be used for routing space for a signal on a Printed
Circuit Board (PCB).
RDY
Ready output; indicates the status of the Burst read. VOL= data invalid. VOH = data valid.
CLK
The first rising edge of CLK in conjunction with AVD# low latches address input and activates burst mode
operation. After the initial word is output, subsequent rising edges of CLK increment the internal address counter.
CLK should remain low during asynchronous access.
AVD#
Address Valid input. Indicates to device that the valid address is present on the address inputs (address bits
A15–A0 are multiplexed, address bits Amax–A16 are address only).
VIL = for asynchronous mode, indicates valid address; for burst mode, causes starting address to be latched on
rising edge of CLK.
VIH= device ignores address inputs.
RESET#
Hardware reset input. VIL= device resets and returns to reading array data.
VPP
At 9V, accelerates programming. At VIL, disables program and erase functions. Should be at VIH for all other
conditions.
6. Logic Symbol
5 to 8
16
Amax–A16
CLK
A/DQ15–
A/DQ0
CE#
OE#
WE#
RESET#
AVD#
RDY
VPP
Amax indicates the highest order address bit.
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S29VS064R
S29XS064R
7.
Ordering Information
The order number (Valid Combination) is formed by the following:
S29VS/XS
064
R
AB
BH
W
00
0
PACKING TYPE
0 = Tray (1)
3 = 13” Tape and Reel
MODEL NUMBER (Boot Option)
00 = Top
01 = Bottom
TEMPERATURE RANGE
W = Wireless (–25°C to +85°C)
PACKAGE TYPE
BH = Very Thin Fine-Pitch BGA, Low Halogen, Lead (Pb)-Free Package
SPEED OPTION (BURST FREQUENCY)
0P =66 MHz
0S =83 MHz
AB =108 MHz
PROCESS TECHNOLOGY
R = 65 nm MirrorBit Technology
FLASH DENSITY
064=64 Mb
DEVICE FAMILY
S29VS = 1.8 Volt-Only, Simultaneous Read/Write, Burst Mode, Address
and Data Multiplexed I/O Interface
S29XS = 1.8 Volt-Only, Simultaneous Read/Write, Burst Mode, Address
Low, Address High and Data Multiplexed I/O Interface
7.1
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult your local sales office to confirm
availability of specific valid combinations and to check on newly released combinations.
S29V/XS-R Valid Combinations (1)(2)
Base Ordering Part
Number
Speed Option
Package Type,
Material, and
Temperature
Packing Type
Model Numbers
Package Type (2)
0P, 0S, AB
BHW
0, 3 (1)
00, 01
7.5 mm x 5.0 mm,
44-ball
S29VS064R
S29XS064R
Notes:
1. Type 0 is standard. Specify other options as required.
2. BGA package marking omits leading “S” and packing type designator from ordering part number.
3. Industrial Temperature Range (-40°C to +85°C) is also available. For device specification differences, please refer to the Specification Supplement with Publication
Number S29VS064R_XS064R_SP.
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Page 10 of 63
S29VS064R
S29XS064R
8.
Address/Data Configuration (Interface) Modes
There are two options for connection to the address and data buses.
 Address and Data Multiplexed (ADM) mode - On the S29VS-R devices upper address is supplied on separate signal inputs and
the lower 16-bits of address are multiplexed with 16-bit data on the A/DQ15 to A/DQ0 I/Os.
 Address-high, Address-low, and Data Multiplexed (AADM) mode - On the S29XS-R devices upper and lower address are
multiplexed with 16-bit data on the A/DQ15 to A/D0 signal I/Os.
The two options allow use with the traditional address/data multiplexed NOR interface (S29VS family), or an address multiplexed/
data multiplexed interface with the lowest signal count (S29XS family).
ADM or AADM mode can be selected via ordering part number only.
8.1
ADM Interface Mode (S29VS064R)
In ADM mode, the AVD# signal is used to capture the entire address with a single toggle of AVD# in asynchronous mode or in a
single clock cycle in synchronous mode.
8.2
AADM Interface Mode (S29XS064R)
Signal input and output (I/O) connections on a high complexity component such as an Application Specific Integrated Circuit (ASIC)
are a limited resource. Reducing signal count on any interface of the ASIC allows for either more features or lower package cost.
The memory interface described in this section is intended to reduce the I/O signal count associated with the flash memory interface
with an ASIC.
The interface is called Address-High, Address-Low, and Data Multiplexed (AADM) because all address and data information is time
multiplexed on a single 16-bit wide bus. This interface is electrically compatible with existing ADM 16-bit wide random access static
memory interfaces but uses fewer address signals. In that sense AADM is a signal count subset of existing static memory interfaces.
This interface can be implemented in existing memory controller designs, as an additional mode, with minimal changes. No new
I/O technology is needed and existing memory interfaces can continue to be supported while the electronics industry adopts this
new interface. ASIC designers can reuse the existing memory address signals above A15 for other functions when an AADM
memory is in use.
By breaking up the memory address in to two time slots the address is naturally extended to be a 32-bit word address. But, using
two bus cycles to transfer the address increases initial access latency by increasing the time address is using the bus. However,
many memory accesses are to locations in memory nearby the previous access. Very often it is not necessary to provide both cycles
of address. This interface stores the high half of address in the memory so that if the high half of address does not change from the
previous access, only the low half of address needs to be sent on the bus. If a new upper address is not captured at the beginning of
an access the last captured value of the upper address is used. This allows accesses within the same 128-kbyte address range to
provide only the lower address as part of each access.
In AADM mode two signal rising edges are needed to capture the upper and lower address portions in asynchronous mode or two
signal combinations over two clocks is needed in synchronous mode. In asynchronous mode the upper address is captured by an
AVD# rising edge when OE# is Low; the lower address is captured on the rising edge of AVD# with OE# High. In synchronous mode
the upper address is captured at the rising clock edge when AVD# and OE# are Low; the lower address is captured at the rising
edge of clock when AVD# is Low and OE# is High.
CE# going High at any time during the access or OE# returning High after RDY is first asserted High during an access, terminates
the read access and causes the address/data bus direction to switch back to input mode. The address/data bus direction switches
from input to output mode only after an Address-Low capture when AVD# is Low and OE# is High. This prevents the assertion of
OE# during Address-High capture from causing a bus conflict between the host address and memory data signals. Note, in burst
mode, this implies at least one cycle of CE# or OE# High before an Address-high for a new access may be placed on the bus so that
there is time for the memory to recognize the end of the previous access, stop driving data outputs, and ignore OE# so that assertion
of OE# with the new Address-high does not create a bus conflict with a new address being driven on the bus. At high bus
frequencies more than one cycle may be need in order to allow time for data outputs to stop driving and new address to be driven
(bus turn around time).
During a write access, the address/data bus direction is always in the input mode.
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S29VS064R
S29XS064R
The upper address is set to Zero or all Ones, for bottom or top boot respectively, during a Hardware Reset, operate in ADM mode
during the early phase of boot code execution where only a single address cycle would be issued with the lower 16 bit of the address
reaching the memory in AADM mode. The default high order address bits will direct the early boot accesses to the 128 kbytes at the
boot end of the device. Note that in AADM interface mode this effectively requires that one of the boot sectors is selected for any
address overlay mode because in the initial phase of AADM mode operation the host memory controller may only issue the low
order address thus limiting the early boot time address space to the 128 kbytes at the boot end of the device.
8.3
Default Access Mode
Upon power-up or hardware reset, the device defaults to the Asynchronous Access mode.
9. Device Bus Operations
This section describes the requirements and use of the device bus operations, which are initiated through the internal command
register. The command register itself does not occupy any addressable memory location. The register is composed of latches that
store the commands, along with the address and data information needed to execute the command. The contents of the register
serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Table lists the device bus
operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these
operations in further detail.
Device Bus Operations
CE#
OE#
WE#
Amax–16
A/DQ15–0
RESET#
CLK
Standby (CE#)
Operation
H
X
X
X
High-Z
H
H/L
AVD#
X
Hardware Reset
X
X
X
X
High-Z
L
X
X
Asynchronous Address Latch
- ADM mode (29VS064R only)
L
H
X
Addr In
Addr In
H
X
Asynchronous Upper Address Latch
- AADM mode (29XS064R only)
L
L
H
X
Addr In
H
X
Asynchronous Lower Address Latch
- AADM mode (29XS064R only)
L
H
X
X
Addr In
H
X
Asynchronous Read
L
L
H
Addr In
I/O
H
L
Write
L
H
L
Addr In
I/O
H
H/L
Latch Starting Burst Address by CLK
-ADM mode (29VS064R only)
L
H
H
Addr In
Addr In
H
L
Latch Upper Starting Burst Address by CLK -AADM mode
(29XS064R only)
L
L
H
X
Addr In
H
L
Latch Lower Starting Burst Address by CLK -AADM mode
(29XS064R only)
L
H
H
X
Addr In
H
L
Advance Burst to next address with appropriate Data
presented on the Data Bus
L
L
H
X
Burst
Data Out
H
H
Terminate current Burst read cycle
H
X
H
X
High-Z
H
Terminate current Burst read cycle via RESET#
X
X
H
X
High-Z
L
Terminate current Burst read cycle and start new Burst
read cycle
L
H
H
X
I/O
H
Burst Read Operations
X
X
X
Legend:
L = Logic 0, H = Logic 1, X = Don’t Care.
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9.1
VersatileIO™ (VIO) Control
The VersatileIO (VIO) control allows the host system to set the voltage levels that the device generates at its data outputs and the
voltages tolerated at its data inputs to the same voltage level that is asserted on the VCCQ pin.
9.2
Asynchronous Read
The device is in the Asynchronous mode when Bit 15 of the Configuration register is set to '1'. To read data from the memory array,
the system must first assert a valid address.
9.2.1
S29VS-R ADM Access
With CE# LOW, WE# HIGH, and OE# HIGH, the system presents the address to the device and sets AVD# LOW. AVD# is kept
LOW for at least tAVDP ns. The address is latched on the rising edge of AVD#.
9.2.2
S29XS-R AADM Access
With CE# LOW, WE# HIGH, and OE# HIGH, the system presents the upper address bits to DQ and sets AVD# LOW. The system
then sets OE# LOW. The upper address bits are set when AVD# goes HIGH.
The system then sets AVD# LOW again, with OE# HIGH to capture the lower address bits. The lower address bits are latched on the
next rising edge of AVD#.
Address access time (tACC) is equal to the delay from stable addresses to valid output data. The chip enable access time (tCE) is the
delay from stable CE# to valid data at the outputs. See AC Characteristics on page 50.
9.3
Synchronous (Burst) Read Mode and Configuration Register
The device is capable of continuous sequential burst operation and linear burst operation of a preset length.
In order to use Synchronous (Burst) Read Mode the configuration register bit 15 must be set to 0.
Prior to entering burst mode, the system should determine how many wait states are needed for the initial word of each burst access
(see Table on page 14), what mode of burst operation is desired, and how the RDY signal transitions with valid data. The system
would then write the configuration register command sequence. See Configuration Register on page 30 for further details.
When the appropriate number of Wait States have occurred, data is output after the rising edge of the CLK. Subsequent words are
output tBACC after the rising edge of each successive clock cycle, which automatically increments the internal address counter. RDY
indicates the initial latency and any subsequent waits.
9.3.1
S29VS-R ADM Access
To burst read data from the memory array in ADM mode, the system must assert CE# to VIL, and provide a valid address while
driving AVD# to VIL for one cycle. OE# must remain at VIH during the one cycle that AVD# is low. The data appears on A/DQ15 -A/
DQ0 when CE# remains Low, after OE# is Low and the synchronous access times are satisfied. The next data in the burst sequence
is read on each clock cycle that OE# and CE# remain Low.
OE# does not terminate a burst access if it rises to VIH during a burst access. The outputs will go to high impedance but the burst
access will continue until terminated by CE# going to VIH, or AVD# returns to VIL with a new address to initiate a another burst
access.
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9.3.2
S29XS-R AADM Access
To burst read data from the memory array in AADM mode, the system must assert CE# to VIL, OE# must go low with AVD# for one
cycle while the upper address is valid. The rising edge of CLK when OE# and AVD# are Low captures the upper 16 bits of address.
The rising edge of CLK when OE# is High and AVD# is Low latches the lower 16 bits of address. The data appears on A/DQ15 -A/
DQ0 when CE# remains Low, after OE# is Low and the synchronous access times are satisfied. The next data in the burst sequence
is read on each clock cycle that OE# and CE# remain Low.
Once OE# returns to VIH during a burst read the OE# no longer enables the outputs until after AVD# is at VIL with OE# at VIH - which
signals that address-low has been captured for the next burst access. This is so that OE# at VIL may be used in conjunction with
AVD# at VIL to indicate address-high on the A/DQ signals without enabling the A/DQ outputs, thus avoiding data output contention
with Address-high.
The device has a fixed internal address boundary that occurs every 128 words. A boundary crossing of one or two additional wait
states is required. The time the device is outputting data with the starting burst address not divisible by eight, additional waits might
be required.
The following Tables show the latency for variable wait state operation (note that ws = wait state).
Wait State vs. Frequency
Wait State
Frequency (Maximum MHz)
3
27
4
40
5
54
6
66
7
80
8
95
9
108
Address Latency for 10 -13 Wait States
Word
Initial Wait
Subsequent Clock Cycles After Initial Wait States
0
D0
D1
D2
D3
D4
D5
D6
D7
+2 ws
D8
1
D1
D2
D3
D4
D5
2
D2
D3
D4
D5
D6
D6
D7
1 ws
+2 ws
D8
D7
1 ws
1 ws
+2 ws
3
D3
D4
D5
D6
D8
D7
1 ws
1 ws
1 ws
+2 ws
D8
4
D4
D5
D6
D7
1 ws
1 ws
1 ws
1 ws
+2 ws
D8
5
D5
D6
6
D6
D7
D7
1 ws
1 ws
1 ws
1 ws
1 ws
+2 ws
D8
1 ws
1 ws
1 ws
1 ws
1 ws
1 ws
+2 ws
7
D7
1 ws
1 ws
D8
1 ws
1 ws
1 ws
1 ws
1 ws
+2 ws
D8
10 -13 wait states
Address Latency for 9 Wait States
Word
Initial Wait
Subsequent Clock Cycles After Initial Wait States
0
D0
D1
D2
D3
D4
D5
D6
D7
+1 ws
D8
1
D1
D2
D3
D4
D5
D6
D7
1 ws
+1 ws
D8
2
D2
D3
D4
D5
D6
D7
1 ws
1 ws
+1 ws
D8
3
D3
D4
D5
D6
D7
1 ws
1 ws
1 ws
+1 ws
D8
4
D4
D5
D6
D7
1 ws
1 ws
1 ws
1 ws
+1 ws
D8
5
D5
D6
D7
1 ws
1 ws
1 ws
1 ws
1 ws
+1 ws
D8
6
D6
D7
1 ws
1 ws
1 ws
1 ws
1 ws
1 ws
+1 ws
D8
7
D7
1 ws
1 ws
1 ws
1 ws
1 ws
1 ws
1 ws
+1 ws
D8
9 wait states
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Address Latency for 8 Wait States
Word
Initial Wait
Subsequent Clock Cycles After Initial Wait States
0
D0
D1
D2
D3
D4
D5
D6
D7
D8
1
D1
D2
D3
D4
D5
D6
D7
1 ws
D8
2
D2
D3
D4
D5
D6
D7
1 ws
1 ws
D8
3
D3
D4
D5
D6
D7
1 ws
1 ws
1 ws
D8
4
D4
D5
D6
D7
1 ws
1 ws
1 ws
1 ws
D8
5
D5
D6
D7
1 ws
1 ws
1 ws
1 ws
1 ws
D8
6
D6
D7
1 ws
1 ws
1 ws
1 ws
1 ws
1 ws
D8
7
D7
1 ws
1 ws
1 ws
1 ws
1 ws
1 ws
1 ws
D8
8 wait states
Address Latency for 7 Wait States
Word
Initial Wait
Subsequent Clock Cycles After Initial Wait States
0
D0
D1
D2
D3
D4
D5
D6
D7
D8
1
D1
D2
D3
D4
D5
D6
D7
D8
D9
2
D2
D3
D4
D5
D6
D7
1 ws
D8
D9
3
D3
D4
D5
D6
D7
1 ws
1 ws
D8
D9
4
D4
D5
D6
D7
1 ws
1 ws
1 ws
D8
D9
5
D5
D6
D7
1 ws
1 ws
1 ws
1 ws
D8
D9
6
D6
D7
1 ws
1 ws
1 ws
1 ws
1 ws
D8
D9
7
D7
1 ws
1 ws
1 ws
1 ws
1 ws
1 ws
D8
D9
7 wait states
Address Latency for 6 Wait States
Word
Initial Wait
Subsequent Clock Cycles After Initial Wait States
0
D0
D1
D2
D3
D4
D5
D6
D7
D8
1
D1
D2
D3
D4
D5
D6
D7
D8
D9
2
D2
D3
D4
D5
D6
D7
D8
D9
D10
3
D3
D4
D5
D6
D7
1 ws
D8
D9
D10
D10
6 wait states
4
D4
D5
D6
D7
1 ws
1 ws
D8
D9
5
D5
D6
D7
1 ws
1 ws
1 ws
D8
D9
D10
6
D6
D7
1 ws
1 ws
1 ws
1 ws
D8
D9
D10
7
D7
1 ws
1 ws
1 ws
1 ws
1 ws
D8
D9
D10
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Address Latency for 5 Wait States
Word
Initial Wait
Subsequent Clock Cycles After Initial Wait States
0
D0
D1
D2
D3
D4
D5
D6
D7
D8
1
D1
D2
D3
D4
D5
D6
D7
D8
D9
2
D2
D3
D4
D5
D6
D7
D8
D9
D10
3
D3
D4
D5
D6
D7
D8
D9
D10
D11
4
D4
D5
D6
D7
1 ws
D8
D9
D10
D11
5
D5
D6
D7
1 ws
1 ws
D8
D9
D10
D11
6
D6
D7
1 ws
1 ws
1 ws
D8
D9
D10
D11
7
D7
1 ws
1 ws
1 ws
1 ws
D8
D9
D10
D11
5 wait states
Address Latency for 4 Wait States
Word
Initial Wait
Subsequent Clock Cycles After Initial Wait States
0
D0
D1
D2
D3
D4
D5
D6
D7
D8
1
D1
D2
D3
D4
D5
D6
D7
D8
D9
2
D2
D3
D4
D5
D6
D7
D8
D9
D10
3
D3
D4
D5
D6
D7
D8
D9
D10
D11
4
D4
D5
D6
D7
D8
D9
D10
D11
D12
5
D5
D6
D7
1 ws
D8
D9
D10
D11
D12
6
D6
D7
1 ws
1 ws
D8
D9
D10
D11
D12
7
D7
1 ws
1 ws
1 ws
D8
D9
D10
D11
D12
4 wait states
Address Latency for 3 Wait States
Word
Initial Wait
Subsequent Clock Cycles After Initial Wait States
0
D0
D1
D2
D3
D4
D5
D6
D7
D8
1
D1
D2
D3
D4
D5
D6
D7
D8
D9
2
D2
D3
D4
D5
D6
D7
D8
D9
D10
3
D3
D4
D5
D6
D7
D8
D9
D10
D11
4
D4
D5
D6
D7
D8
D9
D10
D11
D12
5
D5
D6
D7
D8
D9
D10
D11
D12
D13
6
D6
D7
1 ws
D8
D9
D10
D11
D12
D13
7
D7
1 ws
1 ws
D8
D9
D10
D11
D12
D13
3 wait states
The device will continue to output continuous, sequential burst data, wrapping around to address 000000h after it reaches the
highest addressable memory location, until the system asserts CE# high, RESET# low, or AVD# low in conjunction with a new
address. See Table on page 12. The reset command does not terminate the burst read operation.
8- and 16-Word Linear Burst with Wrap Around
These two modes are of the linear wrap around design, in which a fixed number of words are read from consecutive addresses. In
each of these modes, the burst addresses read are determined by the group within which the starting address falls. The groups are
sized according to the number of words read in a single burst sequence for a given mode (see Table .)
Burst Address Groups
Mode
Group Size
Group Address Ranges
8-word
8 words
0-7h, 8-Fh, 10-17h, 18-1Fh...
16-word
16 words
0-Fh, 10-1Fh, 20-2Fh, 30-3Fh...
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As an example: if the starting address in the 8-word mode is 3Ah, and the burst sequence would be 3A-3B-3C-3D-3E-3F-38-39h.
The burst sequence begins with the starting address written to the device, but wraps back to the first address in the selected group.
In a similar fashion, the 16-word Linear Wrap mode begins its burst sequence on the starting address written to the device, and then
wraps back to the first address in the selected address group and terminates the burst read. Note that in these two burst read
modes the address pointer does not cross the boundary that occurs every 128 words; thus, no wait states are inserted
(except during the initial access).
9.4
Programmable Wait State
The programmable wait state feature indicates to the device the number of additional clock cycles that must elapse after AVD# is
driven active before data will be available. Upon power up, the device defaults to the maximum of seven total cycles. The total
number of wait states is programmable from three to nine cycles. For further details, see Set Configuration Register Command
Sequence on page 27.
9.5
Configuration Register
The device uses a configuration register to set the various burst parameters: number of wait states, burst read mode, burst length,
RDY configuration, and synchronous mode active.
9.6
Handshaking Feature
The handshaking feature allows the host system to simply monitor the RDY signal from the device to determine when the initial word
of burst data is ready to be read. The host system should use the configuration register to set the number of wait states for optimal
burst mode operation. The initial word of burst data is indicated by the rising edge of RDY after OE# goes low.
9.7
Simultaneous Read/Write Operations with Zero Latency
This device is capable of reading data from one bank of memory while programming or erasing in one of the other banks of memory.
An erase operation may also be suspended to read from or program to another location within the same bank (except the sector
being erased). Figure 19.12, on page 59 shows how read and write cycles may be initiated for simultaneous operation with zero
latency. Refer to Table , CMOS Compatible on page 48 for read-while-program and read-while-erase current specifications.
9.8
Writing Commands/Command Sequences
The device has inputs/outputs that accept both address and data information. To write a command or command sequence (which
includes programming data to the device and erasing sectors of memory), the system must drive AVD# and CE# to VIL, and OE# to
VIH when providing an address to the device, and drive WE# and CE# to VIL, and OE# to VIH. when writing commands or data.
An erase operation can erase one sector, multiple sectors, or the entire device. Table 14-17 indicates the address space that each
sector occupies. The device address space is divided into multiple banks. A “bank address” is the address bits required to uniquely
select a bank. Similarly, a “sector address” is the address bits required to uniquely select a sector.
Refer to Table , CMOS Compatible on page 48 for write mode current specifications. The AC Characteristics on page 50 section
contains timing specification tables and timing diagrams for write operations.
9.9
Accelerated Program and Erase Operations
The device offers accelerated program and erase operation through the VPP function. VPP is primarily intended to allow faster
manufacturing throughput at the factory and not to be used in system operations.
If the system asserts VHH on this input, the device uses the higher voltage on the input to reduce the time required for program and
erase operations. Removing VHH from the VPP input, upon completion of the embedded program or erase operation, returns the
device to normal operation. Note that sectors must be unlocked prior to raising VPP to VHH. Note that the VPP pin must not be at VHH
for operations other than accelerated programming, or device damage may result. In addition, the VPP pin must not be left floating or
unconnected; inconsistent behavior of the device may result.
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When at VIL, VPP locks all sectors. VPP should be at VIH for all other conditions.
9.10
Write Buffer Programming Operation
Write Buffer Programming allows the system to write a maximum of 32 words in one programming operation. This results in a
faster effective word programming time than the standard “word” programming algorithms. The Write Buffer Programming command
sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the Write Buffer Load
command written at the Sector Address in which programming will occur. At this point, the system writes the number of “word
locations minus 1” that will be loaded into the page buffer at the Sector Address in which programming will occur. This tells the
device how many write buffer addresses will be loaded with data and therefore when to expect the “Program Buffer to Flash” confirm
command. The number of locations to program cannot exceed the size of the write buffer or the operation will abort. (Note: The
number loaded = the number of locations to program minus 1. For example, if the system will program 6 address locations, then 05h
should be written to the device.)
The system then writes the starting address/data combination. This starting address is the first address/data pair to be programmed,
and selects the “write-buffer-page” address. All subsequent address/data pairs must fall within the “selected-write-buffer-page”, and
be loaded in sequential order.
The “write-buffer-page” is selected by using the addresses AMAX-A5 where AMAX is A21 for S29VS/XS064R.
The “write-buffer-page” addresses must be the same for all address/data pairs loaded into the write buffer. (This means Write
Buffer Programming cannot be performed across multiple “write-buffer-pages”. This also means that Write Buffer Programming
cannot be performed across multiple sectors. If the system attempts to load programming data outside of the selected “write-bufferpage”, the operation will ABORT.)
After writing the Starting Address/Data pair, the system then writes the remaining address/data pairs into the write buffer. Write
buffer locations must be loaded in sequential order.
Note that if a Write Buffer address location is loaded multiple times, the “address/data pair” counter will be decremented for every
data load operation. Also, the last data loaded at a location before the “Program Buffer to Flash” confirm command will be
programmed into the device. It is the software’s responsibility to comprehend ramifications of loading a write-buffer location more
than once. The counter decrements for each data load operation, NOT for each unique write-buffer-address location.
Once the specified number of write buffer locations have been loaded, the system must then write the “Program Buffer to Flash”
command at the Sector Address. Any other address/data write combinations will abort the Write Buffer Programming operation. The
device will then “go busy”. The Data Bar polling techniques should be used while monitoring the last address location loaded into
the write buffer. This eliminates the need to store an address in memory because the system can load the last address location,
issue the program confirm command at the last loaded address location, and then data bar poll at that same address. DQ7, DQ6,
DQ5, DQ2, and DQ1 should be monitored to determine the device status during Write Buffer Programming.
The write-buffer “embedded” programming operation can be suspended using the standard suspend/resume commands. Upon
successful completion of the Write Buffer Programming operation, the device will return to READ mode.
The Write Buffer Programming Sequence can be ABORTED under any of the following conditions:
 Load a value that is greater than the page buffer size during the “Number of Locations to Program” step.
 Write to an address in a sector different than the one specified during the “Write-Buffer-Load” command.
 Write an Address/Data pair to a different write-buffer-page than the one selected by the “Starting Address” during the “write buffer
data loading” stage of the operation.
 Write data other than the “Confirm Command” after the specified number of “data load” cycles.
The ABORT condition is indicated by DQ1 = 1, DQ7 = DATA# (for the “last address location loaded”), DQ6 = TOGGLE, DQ5 = 0.
This indicates that the Write Buffer Programming Operation was ABORTED. Note: The Secured Silicon sector, autoselect, and
CFI functions are unavailable when a program operation is in progress.
Use of the write buffer is strongly recommended for programming when multiple words are to be programmed. Write buffer
programming is allowed in any sequence of memory (or address) locations. These flash devices are capable of handling multiple
write buffer programming operations on the same write buffer address range without intervening erases. However, programming the
same word address multiple times without intervening erases requires a modified programming method. Please contact your local
Spansion representative for details.
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9.11
Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes
output from the internal register (which is separate from the memory array) on DQ15-DQ0. This mode is primarily intended for
programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. The
autoselect codes can also be accessed in-system.
When verifying sector protection, the sector address must appear on the appropriate highest order address bits. The remaining
address bits are don’t care. When all necessary bits have been set as required, the programming equipment may then read the
corresponding identifier code on DQ15-DQ0. The autoselect codes can also be accessed in-system through the command register.
The command sequence is illustrated in Table , Command Definitions on page 39. Note that if a Bank Address (BA) on address bits
A21, A20, and A19 for the VS/XS064R are asserted during the third write cycle of the autoselect command, the host system can
read autoselect data that bank and then immediately read array data from the other bank, without exiting the autoselect mode.
To access the autoselect codes, the host system must issue the autoselect command via the command register, as shown in Table ,
Command Definitions on page 39.
9.12
Sector Protection
The device features sector protection, which can disable both the program and erase operations in certain sectors.
Dynamic Protection Bit (DYB)
DYB is a security feature used to protect individual sectors from being programmed or erased inadvertently. It is a volatile protection
bit and is assigned to each sector. Upon power-up, the contents of all DYBs are cleared (erased to “1”). Each DYB can be
individually modified through the DYB Set Command or the DYB Clear Command.
The Protection Status for a particular sector is determined by the status of the DYB relative to that sector. By issuing the DYB Set or
Clear command sequences, the DYBs will be set (programmed to “0”) or cleared (erased to “1”), thus placing each sector in the
protected or unprotected state respectively. These states are the so-called Dynamic Locked or Unlocked states due to the fact that
they can switch back and forth between the protected and unprotected states. This feature allows software to easily protect sectors
against inadvertent changes yet does not prevent the easy removal of protection when changes are needed. The DYBs maybe set
(programmed to “0”) or cleared (erased to “1”) as often as needed.
When the parts are first shipped, upon power up or reset, the DYBs are cleared (erased to “1”).
Note: Dynamic protection bits revert back to their default values after programming device’s “Lock Register.”
The sectors in the dynamic state are all unprotected. If there is a need to protect some of them, a simple DYB Set command
sequence is all that is necessary. The DYB Set or Clear command for the dynamic sectors signify protected or unprotected state of
the sectors respectively.
If the user attempts to program or erase a protected sector, the device ignores the command and returns to read mode. A program
or erase command to a protected sector enables status polling and returns to read mode without having modified the contents of the
protected sector.
The programming of the DYB for a given sector can be verified by writing individual status read commands DYB Status.
9.13
Hardware Data Protection Mode
The device offers one type of data protection at the sector level:
 When VPP is at VIL, all sectors are locked
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9.14
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down.
The command register and all internal program/erase circuits are disabled, and the device resets to reading array data. Subsequent
writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control inputs to prevent
unintentional writes when VCC is greater than VLKO.
9.15
Write Pulse “Glitch” Protection
Noise pulses of less than tWEP on WE# do not initiate a write cycle.
9.16
Logical Inhibit
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle, CE# and WE# must be
a logical zero while OE# is a logical one.
Power-Up Write Inhibit
If WE# = CE# = RESET# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#.
The internal state machine is automatically reset to the read mode on power-up.
9.17
Lock Register
The Lock Register consists of one bit. This bit is non-volatile and read-only. DQ15-DQ1 are reserved and are undefined.
Lock Register
DQ15-1
Undefined
DQ0
Secured Silicon Sector Protection Bit
Note:
When the device lock register is programmed (the Secured Silicon lock bit is programmed) all DYBs revert to the power-on default state.
9.18
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current
consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input.
The device enters the CMOS standby mode when the CE# and RESET# inputs are both held at VCC. The device requires standard
access time (tCE) for read access when the device is in either of these standby modes, before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the operation is completed.
ICC3 in Table , CMOS Compatible on page 48 represents the standby current specification.
9.19
Automatic Sleep Mode
The automatic sleep mode minimizes flash device energy consumption. The device automatically enters this mode when addresses
and clock remain stable for tACC + 20 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals.
Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and
always available to the system. ICC4 in Table , CMOS Compatible on page 48 represents the automatic sleep mode current
specification.
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9.20
RESET#: Hardware Reset Input
The RESET# input provides a hardware method of resetting the device to reading array data. When RESET# is driven low for at
least a period of tRP, the device immediately terminates any operation in progress, tristates all outputs, and ignores all read/write
commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The
operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data
integrity.
Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS, the device draws CMOS standby current
(ICC4). If RESET# is held at VIL but not within VSS, the standby current will be greater.
RESET# may be tied to the system reset circuitry. A system reset would thus also reset the flash memory, enabling the system to
read the boot-up firmware from the flash memory.
Refer to the AC Characteristics on page 50 tables for RESET# parameters and to Figure 19.5 on page 54 for the timing diagram.
VCC Power-up and Power-down Sequencing
The device imposes no restrictions on VCC power-up or power-down sequencing. Asserting RESET# to VIL is required during the
entire VCC power sequence until the respective supplies reach their operating voltages. Once VCC attains its operating voltage, deassertion of RESET# to VIH is permitted.
9.21
Output Disable Mode
When the OE# input is at VIH, output from the device is disabled. The outputs are placed in the high impedance state.
9.22
Secured Silicon Sector Flash Memory Region
The Secured Silicon Sector feature provides a flash memory region that enables permanent part identification through an Electronic
Serial Number (ESN). The Secured Silicon Sector is 256 words in length. All reads outside of the 256 word address range will return
non-valid data. The Factory Indicator Bit (DQ7) is used to indicate whether or not the Factory Secured Silicon Sector is locked when
shipped from the factory. The Customer Indicator Bit (DQ6) is used to indicate whether or not the Customer Secured Silicon Sector
is locked when shipped from the factory. The Factory Secured Silicon bits are permanently set at the factory and cannot be
changed, which prevents cloning of a factory locked part. This ensures the security of the ESN and customer code once the product
is shipped to the field.
Spansion offers the device with a Factory Secured Silicon Sector that is locked and a Customer Secured Silicon Sector that is either
locked or is lockable. The Factory Secured Silicon Sector is always protected when shipped from the factory, and has the Factory
Indicator Bit (DQ7) permanently set to a “1”. The Customer Secured Silicon Sector is shipped unprotected, allowing customers to
utilize that sector in any manner they choose. Once the Customer Secured Silicon Sector area is protected, the Customer Indicator
Bit will be permanently set to “1”.
The system accesses the Secured Silicon Sector through a command sequence (see Enter/Exit Secured Silicon Sector Command
Sequence on page 31). After the system has written the Enter Secured Silicon Sector command sequence, it may read the Secured
Silicon Sector by using the addresses normally occupied by sector SA0 of the memory array. This mode of operation continues until
the system issues the Exit Secured Silicon Sector command sequence, or until power is removed from the device. While Secured
Silicon Sector access is enabled, Memory Array read access, program operations, and erase operations to all sectors other than
SA0 are also available. On power-up, or following a hardware reset, the device reverts to sending commands to the normal address
space.
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Factory Secured Silicon Sector
The Factory Secured Silicon Sector is protected when the device is shipped from the factory. The Factory Secured Silicon Sector
cannot be modified in any way. The Factory Secured Silicon Sector is located at addresses 000000h–00007Fh and is unprogrammed
by default.
The device is available pre programmed with one of the following:
 A random, secure ESN only within the Factory Secured Silicon Sector.
 Customer code within the Customer Secured Silicon Sector through the Spansion programming services.
 Both a random, secure ESN and customer code through the Spansion programming services.
Secured Silicon Sector Addresses
Sector
Sector Size
Address Range
Customer
128 words
000080h-0000FFh
Factory
128 words
000000h-00007Fh
Customers may opt to have their code programmed by Spansion through the Spansion programming services. Spansion programs
the customer’s code, with or without the random ESN. The devices are then shipped from Spansion’s factory with the Factory
Secured Silicon Sector and Customer Secured Silicon Sector permanently locked. Contact a Spansion representative for details on
using Spansion’s programming services.
Customer Secured Silicon Sector
If the security feature is not required, the Customer Secured Silicon Sector can be treated as an additional flash memory space. The
Customer Secured Silicon Sector can be read any number of times, but can be programmed and locked only once. Note that the
accelerated programming (VPP) function is not available when programming the Customer Secured Silicon Sector, but reading the
first Bank through the last bank is available. The Customer Secured Silicon Sector is located at addresses 000080h–0000FFh.
The Customer Secured Silicon Sector area can be protected by writing the Secured Silicon Sector Protection Bit Lock command
sequence.
Once the Customer Secured Silicon Sector is locked and verified, the system must write the Exit Secured Silicon Sector Region
command sequence to return to reading and writing SA0 in the memory array.
The Customer Secured Silicon Sector lock must be used with caution since, once locked, there is no procedure available for
unlocking the Customer Secured Silicon Sector area and none of the bits in the Customer Secured Silicon Sector memory space
can be modified in any way.
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10. Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows
specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be deviceindependent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors
can standardize their existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h any time the device
is ready to read array data. The system can read CFI information at the addresses given in Tables Table –Table . To terminate
reading CFI data, the system must write the reset command.
For further information, please refer to the CFI Specification (see JEDEC publications JEP137-A and JESD68.01). Please contact
your sales office for copies of these documents.
ID/CFI Data
DATA
Word Offset
Address
VS/XS064R
(SA) + 00h
0001h
(SA) + 01h
007Eh (top/bottom)
(SA) + 02h
0001h-Locked,
0000h-Unlocked
(SA) + 03h
0000h
Reserved
(SA) + 04h
Reserved
Reserved
(SA) + 05h
Reserved
Reserved
(SA) + 06h
0010h
ID Version
Description
Spansion Manufacturer ID
Device ID, Word 1 Extended ID address code. Indicates an extended two byte device ID is
located at byte address 1Ch and 1Eh.
Indicator Bits:
DQ15 - DQ8 = Reserved
(SA) + 07h
00BFh
DQ7 - Factory Lock Bit: 1 = Locked; 0 = Not Locked
DQ6 - Customer Lock Bit: 1 = Locked; 0 = Not locked
Device Identification
DQ5 - DQ0 = Reserved
(SA) + 08h
Reserved
Reserved
(SA) + 09h
Reserved
Reserved
(SA) + 0Ah
Reserved
Reserved
(SA) + 0Bh
Reserved
Reserved
Lower Software Bits
Bit 0 - Status Register Support
1 = Status Register Supported
0 = Status register not Supported
(SA) + 0Ch
00F2h
Bit 1 - DQ Polling Support
1 = DQ bits polling supported
0 = DQ bits polling not supported
Bit 3-2 - Command Set Support
11 = Reserved
10 = Reserved
01 = Reduced Command Set
00 = Old Command Set
Bit 4-F - Reserved
(SA) + 0Dh
Reserved
(SA) + 0Eh
0061h (top/bottom)
(SA) + 0Fh
0001h (top)
0002h (bottom)
Upper Software Bits
Reserved
High Order Device ID, Word 2
Low Order Device ID, Word 3
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CFI Query Identification String
Data
Addresses
Description
VS/XS064R
10h
11h
12h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
0002h
0000h
Primary OEM Command Set
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
System Interface String
Data
Addresses
Description
VS/XS064R
1Bh
0017h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0019h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
VPP Min. voltage (00h = no VPP pin present) Refer to 4Dh
1Eh
0000h
VPP Max. voltage (00h = no VPP pin present) Refer to 4Eh
1Fh
0008h
Typical timeout per single byte/word write 2N µs
20h
0009h
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h
000Ah
Typical timeout per individual block erase 2N ms
22h
0011h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
0003h
Max. timeout for byte/word write 2N times typical
24h
0003h
Max. timeout for buffer write 2N times typical
25h
0003h
Max. timeout per individual block erase 2N times typical
26h
0003h
Max. timeout for full chip erase 2N times typical (00h = not supported)
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Device Geometry Definition
Data
Addresses
Description
VS/XS064R
27h
0017h
28h
0001h
Device Size = 2N byte
Flash Device Interface description (refer to CFI publication 100)
29h
0000h
2Ah
0006h
Max. number of bytes in multi-byte write = 2N (00h = not supported)
2Bh
0000h
2Ch
0002h
Number of Erase Block Regions within device
007Eh (top boot)
2Dh
0003h (bottom boot)
0000h (top boot)
2Eh
0000h (bottom boot)
0000h (top boot)
Erase Block Region 1 Information (refer to the CFI specification or CFI
publication 100)
2Fh
0040h (bottom boot)
0001h (top boot)
30h
0000h (bottom boot)
0003h (top boot)
31h
007Eh (bottom boot)
0000h (top boot)
32h
0000h (bottom boot)
Erase Block Region 2 Information
0040h (top boot)
33h
0000h (bottom boot)
0000h (top boot)
34h
0001h (bottom boot)
35h
00FFh
36h
00FFh
37h
00FFh
38h
00FFh
Erase Block Region 3 Information
39h
00FFh
3Ah
00FFh
3Bh
00FFh
3Ch
00FFh
Erase Block Region 4 Information
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Primary Vendor-Specific Extended Query
Data
Addresses
Description
VS/XS064R
40h
0050h
41h
0052h
42h
0049h
43h
0031h
Major version number, ASCII
44h
0034h
Minor version number, ASCII
45h
0020h
Address Sensitive Unlock (Bits 1-0) 0 = Required, 1 = Not Required Silicon Revision
Number (Bits 7-2)
46h
0002h
Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
0001h
Sector Protect 0 = Not Supported, X = Number of sectors in per group
48h
0000h
Sector Temporary Unprotect 00 = Not Supported, 01 = Supported
Query-unique ASCII string “PRI”
49h
0008h
Sector Protect/Unprotect scheme 08 = Advanced Sector Protection
4Ah
0020h
Simultaneous Operation Number of Sectors in all banks except boot bank
4Bh
0001h
Burst Mode Type 00 = Not Supported, 01 = Supported
4Ch
0000h
Page Mode 00 = Not Supported, 01 = Supported
4Dh
0085h
VPP (Acceleration) Supply Minimum 00h = Not Supported, D7-D4: Volt,
D3-D0: 100 mV
4Eh
0095h
VPP (Acceleration) Supply Maximum 00h = Not Supported, D7-D4: Volt,
D3-D0: 100 mV
0003h (top boot)
4Fh
0002h (bottom boot)
Top/Bottom Boot Sector Flag
0001h = Top/Middle Boot Device,
0002h = Bottom Boot Device,
03h = Top Boot Device
50h
0001h
Program Suspend. 00h = not supported
51h
0000h
Unlock Bypass 00 = Not Supported, 01 = Supported
52h
0008h
Secured Silicon Sector (Customer OTP Area) Size 2N bytes
53h
000Eh
Hardware Reset Low Time-out during an embedded algorithm to read more mode
Maximum 2N ns
54h
000Eh
Hardware Reset Low Time-out during an embedded algorithm to read more mode
Maximum 2N ns
55h
0005h
Erase Suspend Time-out Maximum 2N ns
56h
0005h
Program Suspend Time-out Maximum 2N ns
0004h
Bank Organization: X = Number of banks
57h
0020h (top boot)
58h
Bank 0 Region Information. X = Number of sectors in banks
0023h (bottom boot)
59h
0020h
Bank 1 Region Information. X = Number of sectors in banks
5Ah
0020h
Bank 2 Region Information. X = Number of sectors in banks
0023h (top boot)
5Bh
Bank 3 Region Information. X = Number of sectors in banks
0020h (bottom boot)
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11. Command Definitions
Writing specific address and data commands or sequences into the command register initiates device operations. Table on page 39
defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper
sequence resets the device to reading array data.
All addresses are latched on the rising edge of AVD#. All data is latched on the rising edge of WE#. Refer to AC Characteristics
on page 50 for timing diagrams.
11.1
Reading Array Data
The device is automatically set to reading array data after device power-up. No commands are required to retrieve data in
asynchronous mode. Each bank is ready to read array data after completing an Embedded Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the corresponding bank enters the erase-suspend-read mode, after which
the system can read data from any non-erase-suspended sector. After completing a programming operation in the Erase Suspend
mode, the system may once again read array data with the same exception. See 12.9, Erase Suspend/Erase Resume Commands
on page 37 for more information.
After the device accepts a Program Suspend command, the corresponding bank enters the program-suspend-read mode, after
which the system can read data from any non-program-suspended sector within the same bank.
The system must issue the reset command to return a bank to the read (or erase-suspend-read) mode if DQ5 goes high during an
active program or erase operation, or if the bank is in the autoselect mode.
See also VersatileIO™ (VIO) Control on page 13 and Synchronous (Burst) Read Mode and Configuration Register on page 13 in
Device Bus Operations on page 12 for more information. The Asynchronous Read and Synchronous/Burst Read tables provide the
read parameters, and Figure 19.3, on page 52 and Figure 19.4, on page 53 show the timings.
11.2
Set Configuration Register Command Sequence
The device uses a configuration register to set the various burst parameters: number of wait states, burst read mode, RDY
configuration, and synchronous mode active. The configuration register must be set before the device will enter burst mode.
The configuration register is loaded with a four-cycle command sequence. The first two cycles are standard unlock sequences. On
the third cycle, the data should be D0h and address bits should be 555h. During the fourth cycle, the configuration code should be
entered onto the data bus with the address bus set to address 000h. Once the data has been programmed into the configuration
register, a software reset command is required to set the device into the correct state. The device will power up or after a hardware
reset with the default setting, which is in asynchronous mode. The register must be set before the device can enter synchronous
mode. The configuration register can not be changed during device operations (program, erase, or sector lock).
11.3
Read Configuration Register Command Sequence
The configuration register can be read with a four-cycle command sequence. The first two cycles are standard unlock sequences.
On the third cycle, the data should be C6h and address bits should be 555h. During the fourth cycle, the configuration code should
be read out of the data bus with the address bus set to address 000h. Once the data has been read from the configuration register,
a software reset command is required to set the device into the correct set mode.
11.3.1
Read Mode Setting
On power-up or hardware reset, the device is set to be in asynchronous read mode. This setting allows the system to enable or
disable burst mode during system operations.
11.3.2
Programmable Wait State Configuration
The programmable wait state feature informs the device of the number of clock cycles that must elapse after AVD# is driven active
before data will be available. This value is determined by the input frequency of the device. Configuration Bit CR13–CR11
determine the setting (see Table ).
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The wait state command sequence instructs the device to set a particular number of clock cycles for the initial access in burst mode.
The number of wait states that should be programmed into the device is directly related to the clock frequency.
Programmable Wait State Settings
CR13
CR12
CR11
Total Initial Access Cycles
0
0
0
Reserved
0
0
1
3
0
1
0
4
0
1
1
5
1
0
0
6
1
0
1
7 (default)
1
1
0
8
1
1
1
9
Notes:
1. Upon power-up or hardware reset, the default setting is seven wait states.
2. RDY will default to being active with data when the Wait State Setting is set to a total initial access cycle of 2.
It is recommended that the wait state command sequence be written, even if the default wait state value is desired, to ensure the
device is set as expected. A hardware reset will set the wait state to the default setting.
11.3.3
Programmable Wait State
The host system should set CR13-CR11 to 100 for a clock frequency of 66 MHz for the system/device to execute at maximum
speed.
Table describes the typical number of clock cycles (wait states) for various conditions.
Wait States for Handshaking
Typical No. of Clock Cycles after AVD# Low
Conditions at Address
Initial address (VCCQ = 1.8 V)
11.3.4
Clock Cycles
Frequency (Maximum MHz)
6
66
7
80
8
95
9
108
Handshaking
For optimal burst mode performance, the host system must set the appropriate number of wait states in the flash device depending
on the clock frequency.
The autoselect function allows the host system to determine whether the flash device is enabled for handshaking.
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11.3.5
Burst Length Configuration
The device supports four different read modes: continuous mode, and 8 and 16 word linear with wrap around modes. A continuous
sequence (default) begins at the starting address and advances the address pointer until the burst operation is complete. If the
highest address in the device is reached during the continuous burst read mode, the address pointer wraps around to the lowest
address.
For example, an eight-word linear read with wrap around begins on the starting address written to the device and then advances to
the next 8 word boundary. The address pointer then returns to the 1st word after the previous eight word boundary, wrapping
through the starting location. The sixteen linear wrap around mode operates in a fashion similar to the eight-word mode.
Table shows the CR2-CR0 and settings for the four read modes.
Burst Length Configuration
Address Bits
Burst Modes
CR2
CR1
CR0
Continuous
0
0
0
8-word linear
0
1
0
16-word linear
0
1
1
Notes:
1. Upon power-up or hardware reset the default setting is continuous.
2. All other conditions are reserved.
11.3.6
Burst Wrap Around
By default, the device will perform burst wrap around with CR3 set to a ‘1’. Changing the CR3 to a ‘0’ disables burst wrap around.
11.3.7
RDY Configuration
By default, the device is set so that the RDY pin will output VOH whenever there is valid data on the outputs. The device can be set
so that RDY goes active one data cycle before active data. CR8 determines this setting; “1” for RDY active (default) with data, “0” for
RDY active one clock cycle before valid data.
11.3.8
RDY Polarity
By default, the RDY pin will always indicate that the device is ready to handle a new transaction with CR10 set to a “1”. In this case,
the RDY pin is active high. Changing the CR10 to a ‘0’ sets the RDY pin to be active low. In this case, the RDY pin will always
indicate that the device is ready to handle a new transaction when low.
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12. Configuration Register
Table shows the address bits that determine the configuration register settings for various device functions.
Configuration Register
CR BIt
Function
CR15
Device Read
Mode
CR14
Reserved
CR13
CR12
Programmable
Wait State
CR11
CR10
RDY Polarity
CR9
Reserved
Settings (Binary)
0 = Synchronous Read Mode
1 = Asynchronous Read Mode (Default)
0 = Default
000 = Reserved
001 = Data is valid on the 3rd active CLK edge after addresses are latched
010 = Data is valid on the 4th active CLK edge after addresses are latched
011 = Data is valid on the 5th active CLK edge after addresses are latched
100 = Data is valid on the 6th active CLK edge after addresses are latched
101 = Data is valid on the 7th active CLK edge after addresses are latched (default)
110 = Data is valid on the 8th active CLK edge after addresses are latched
111 = Data is valid on the 9th active CLK edge after addresses are latched
0 = RDY signal is active low
1 = RDY signal is active high (default)
1 = Default
0 = RDY active one clock cycle before data
1 = RDY active with data (default)
CR8
RDY
CR7
Reserved
1 = default
CR6
Reserved
1 = default
CR5
Reserved
0 = default
CR4
Reserved
CR3
Burst Wrap
Around
CR2
CR1
CR0
Burst Length
0 = default
0 = Reserved
1 = Wrap Around Burst (default)
000 = Continuous (default)
010 = 8-Word Linear Burst
011 = 16-Word Linear Burst
100 = Reserved
(All other bit settings are reserved)
Notes:
1. Device will be in the default state upon power-up or hardware reset.
2. CR3 will always equal to 1 (Wrap around mode) when CR0,CR1,CR2 = 000 (continuous Burst mode).
12.1
Reset Command
Writing the reset command resets the banks to the read or erase-suspend-read mode. Address bits are don’t cares for this
command.
The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This
resets the bank to which the system was writing to the read mode. Once erasure begins, however, the device ignores reset
commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence before programming begins.
This resets the bank to which the system was writing to the read mode. If the program command sequence is written to a bank that
is in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. Once programming
begins, however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect
mode, the reset command must be written to return to the read mode. If a bank entered the autoselect mode while in the Erase
Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command returns the banks to the read mode (or erasesuspend-read mode if that bank was in Erase Suspend).
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Note: If DQ1 goes high during a Write Buffer Programming operation, the system must write the “Write to Buffer Abort Reset”
command sequence to RESET the device to reading array data. The standard RESET command will not work. See Table
on page 26 for details on this command sequence.
12.2
Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manufacturer and device codes, and determine whether or
not a sector is protected. The autoselect command sequence may be written to an address within a bank that is either in the read or
erase-suspend-read mode. The autoselect command may not be written while the device is actively programming or erasing in the
other bank. Autoselect does not support simultaneous operations or burst mode.
The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle that contains
the bank address and the autoselect command. The bank then enters the autoselect mode. The system may read at any address
within the same bank any number of times without initiating another autoselect command sequence. The following table describes
the address requirements for the various autoselect functions, and the resulting data. BA represents the bank address. The device
ID is read in three cycles. During this time, other banks are still available to read the data from the memory.
The system must write the reset command to return to the read mode (or erase-suspend-read mode if the bank was previously in
Erase Suspend).
12.3
Enter/Exit Secured Silicon Sector Command Sequence
The Secured Silicon Sector region provides a secured data area containing a random, eight word electronic serial number (ESN).
The system can access the Secured Silicon Sector region by issuing the three-cycle Enter Secured Silicon Sector command
sequence. The device continues to access the Secured Silicon Sector region until the system issues the four-cycle Exit Secured
Silicon Sector command sequence. The Exit Secured Silicon Sector command sequence returns the device to normal operation.
The Secured Silicon Sector is not accessible when the device is executing an Embedded Program or embedded Erase algorithm.
Table on page 39 shows the address and data requirements for both command sequences.
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12.4
Program Command Sequence
Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed
by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program
algorithm. The system is not required to provide further controls or timings. The device automatically provides internally generated
program pulses and verifies the programmed cell margin. Table on page 39 shows the address and data requirements for the
program command sequence.
When the Embedded Program algorithm is complete, that bank then returns to the read mode and addresses are no longer latched.
The system can determine the status of the program operation by monitoring DQ7 or DQ6/DQ2. Refer to Write Operation Status
on page 41 for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately
terminates the program operation. The program command sequence should be reinitiated once that bank has returned to the read
mode, to ensure data integrity.
Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from “0” back to a “1.”
Attempting to do so may causes that bank to set DQ5 = 1 (change-up condition). However, a succeeding read will show that the data
is still “0.” Only erase operations can convert a “0” to a “1.”
12.5
Accelerated Program
The device offers accelerated program operations through the VPP input. The device uses the higher voltage on the VPP input to
accelerate the operation.
Figure 12.1 illustrates the algorithm for the program operation. Refer to the Erase/Program Operations table in AC Characteristics
for parameters, and Figure 19.6, on page 55 for timing diagrams.
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Figure 12.1 Program Operation
START
Write Program
Command Sequence
Data Poll
from System
Embedded
Program
algorithm
in progress
Verify Data?
No
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
Note:
1. See Table on page 39 for program command sequence.
12.6
Write Buffer Programming Command Sequence
Write Buffer Programming Sequence allows for faster programming as compared to the standard Program Command Sequence.
See Table for the program command sequence.
Write Buffer Command Sequence
Sequence
Address
Data
Comment
Unlock Command 1
555
00AA
Not required in the Unlock Bypass mode
Unlock Command 2
2AA
0055
Same as above
Write Buffer Load
Starting
Address
0025h
Specify the Number of Program
Locations
Starting
Address
Word
Count
Load 1st data word
Starting
Address
Program
Data
All addresses must be within write-buffer-page boundaries, but do not
have to be loaded in any order
Load next data word
Write Buffer
Location
Program
Data
Same as above
...
Load last data word
Write Buffer Program Confirm
Number of locations to program minus 1
...
...
Same as above
Write Buffer
Location
Program
Data
Same as above
Sector
Address
0029h
Document Number: 002-00949 Rev. *G
This command must follow the last write buffer location loaded, or the
operation will ABORT
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Write Buffer Command Sequence
Device goes busy
Status monitoring through DQ pins
(Perform Data Bar Polling on the
Last Loaded Address)
Note:
1. Write buffer addresses must be loaded in sequential order.
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Figure 12.2 Write Buffer Programming Operation
Write “Write to Buffer”
command and
Sector Address
Part of “Write to Buffer”
Command Sequence
Write number of addresses
to program minus 1(WC)
and Sector Address
Write first address/data
Yes
WC = 0 ?
No
Abort Write to
Buffer Operation?
Write to a different
sector address
Yes
Write to buffer ABORTED.
Must write “Write-to-buffer
Abort Reset” command
sequence to return
to read mode.
No
Write next address/data pair
WC = WC - 1
Write program buffer to
flash sector address
Read DQ15 - DQ0 at
Last Loaded Address
DQ7 = Data?
No
Yes
No
No
DQ1 = 1?
DQ5 = 1?
Yes
Yes
Read DQ15 - DQ0 with
address = Last Loaded
Address
DQ7 = Data?
Yes
No
FAIL or ABORT
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PASS
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12.7
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a
set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the
Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm
automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not
required to provide any controls or timings during these operations. Table on page 39 shows the address and data requirements for
the chip erase command sequence.
When the Embedded Erase algorithm is complete, that bank returns to the read mode and addresses are no longer latched. The
system can determine the status of the erase operation by using DQ7 or DQ6/DQ2. Refer to Write Operation Status on page 41 for
information on these status bits.
Any commands written during the chip erase operation are ignored. However, note that a hardware reset immediately terminates
the erase operation. If that occurs, the chip erase command sequence should be reinitiated once that bank has returned to reading
array data, to ensure data integrity.
12.8
Sector Erase Command Sequence
Sector erase in normal mode is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector
to be erased, and the sector erase command. Table on page 39 shows the address and data requirements for the sector erase
command sequence.
The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs and
verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or
timings during these operations.
The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3: Sector Erase start
timeout state indicator.). The time-out begins from the rising edge of the final WE# pulse in the command sequence.
When the Embedded Erase algorithm is complete, the bank returns to reading array data and addresses are no longer latched. Note
that while the Embedded Erase operation is in progress, the system can read data from the non-erasing banks. The system can
determine the status of the erase operation by reading DQ7 or DQ6/ DQ2 in the erasing bank. Refer to Write Operation Status
on page 41 for information on these status bits.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. However,
note that a hardware reset immediately terminates the erase operation. If that occurs, the sector erase command sequence should
be reinitiated once that bank has returned to reading array data, to ensure data integrity.
Accelerated Sector Erase
The device offers accelerated sector erase operation through the VPP function. This method of erasing sectors is faster than the
standard sector erase command sequence. The accelerated sector erase function must not be used more than 100 times per
sector. In addition, accelerated sector erase should be performed at room temperature (30C ±10C).
The following procedure is used to perform accelerated sector erase:
1. Sectors to be erased must be DYB cleared. All sectors that remain locked will not be erased.
2. Apply 9V to the VPP input. This voltage must be applied at least 1 µs before executing Step 3.
3. Issue the standard chip erase command.
4. Monitor status bits DQ2/DQ6 or DQ7 to determine when erasure is complete, just as in the standard erase operation. See
Write Operation Status on page 41 for further details.
5. Lower VPP from 9V to VCC.
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Figure 12.3 Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
No
Embedded
Erase
algorithm
in progress
Data = FFh?
Yes
Erasure Completed
Note:
See the section on DQ3 for information on the sector erase start timeout state indicator.
12.9
Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read data from, program data
to, any sector not selected for erasure. The system may also lock or unlock any sector while the erase operation is suspended. The
system must not write the sector lock/unlock command to sectors selected for erasure. The bank address is required when
writing this command. This command is valid only during the sector erase operation. The Erase Suspend command is ignored if
written during the chip erase operation or Embedded Program algorithm.
When the Erase Suspend command is written during the sector erase operation, the device requires a maximum of tESL, erase
suspend latency, to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase
time-out, the device immediately terminates the time-out period and suspends the erase operation.
After the erase operation has been suspended, the bank enters the erase-suspend-read mode. The system can read data from or
program data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) The system may
also lock or unlock any sector while in the erase-suspend-read mode. Reading at any address within erase-suspended sectors
produces status information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively
erasing or is erase-suspended. Refer to Write Operation Status on page 41 for information on these status bits.
After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read mode. The system can
determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard program operation. Refer to
Write Operation Status on page 41 for more information.
In the erase-suspend-read mode, the system can also issue the autoselect command sequence. Refer to the Autoselect Functions
and Autoselect Command Sequence sections for details.
To resume the sector erase operation, the system must write the Erase Resume command. The bank address of the erasesuspended bank is required when writing this command. Further writes of the Resume command are ignored. Another Erase
Suspend command can be written after the chip has resumed erasing.
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12.10 Program Suspend/Program Resume Commands
The Program Suspend command allows the system to interrupt a embedded programming operation or a “Write to Buffer”
programming operation so that data can read from any non-suspended sector. When the Program Suspend command is written
during a programming process, the device halts the programming operation within tPSL, program suspend latency, and updates the
status bits. Addresses are defined when writing the Program Suspend command.
After the programming operation has been suspended, the system can read array data from any non-suspended sector. The
Program Suspend command may also be issued during a programming operation while an erase is suspended. In this case, data
may be read from any addresses not in Erase Suspend or Program Suspend. If a read is needed from the Secured Silicon Sector
area (One Time Program area), then user must use the proper command sequences to enter and exit this region.
The system may also write the autoselect command sequence when the device is in Program Suspend mode. The device allows
reading autoselect codes in the suspended sectors, since the codes are not stored in the memory array. When the device exits the
autoselect mode, the device reverts to Program Suspend mode, and is ready for another valid operation. See Autoselect Command
Sequence on page 31 for more information.
After the Program Resume command is written, the device reverts to programming. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits, just as in the standard program operation. See Write Operation Status
on page 41 for more information.
The system must write the Program Resume command (address bits are “don’t care”) to exit the Program Suspend mode and
continue the programming operation. Further writes of the Program Resume command are ignored. Another Program Suspend
command can be written after the device has resume programming.
12.11 Volatile Sector Protection Command Set
The Volatile Sector Protection Command Set permits the user to set the Dynamic Protection Bit (DYB), clear the Dynamic Protection
Bit (DYB), and read the logic state of the Dynamic Protection Bit (DYB).
The Volatile Sector Protection Command Set Entry command sequence must be issued prior to any of the commands listed
following to enable proper command execution.
Note that issuing the Volatile Sector Protection Command Set Entry command disables reads and writes for the bank selected
with the command. Reads for other banks excluding the selected bank are allowed.
 DYB Set Command
 DYB Clear Command
 DYB Status Read Command
The DYB Set/Clear command is used to set or clear a DYB for a given sector. The high order address bits (Amax-A13 for VS/
XS064R) are issued at the same time as the code 00h or 01h on DQ7-DQ0. All other DQ data bus pins are ignored during the data
write cycle. The DYBs are modifiable at any time. The DYBs are set at power-up or hardware reset.
The programming state of the DYB for a given sector can be verified by writing a DYB Status Read Command to the device.
Note: The bank entered during entry is the active bank. Take for example the active bank is BA0. Any reads in BA0 will result in
status reads of the DYB bit. If the user wants to set (programmed to “0”) in a different bank other than the active bank, say for
example BA5, then the active bank switches from BA0 to BA5. Reading in BA5 will result in status read of the bit whereas reading in
BA0 will result in true data.
The Volatile Sector Protection Command Set Exit command must be issued after the execution of the commands listed
previously to reset the device to read mode.
Note that issuing the Volatile Sector Protection Command Set Exit command re-enables reads and writes for the bank selected.
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Command Sequence
(Notes)
Cycles
Command Definitions (Sheet 1 of 2)
Bus Cycles (Notes 1–6)
First
Second
Addr
Data
Third
Fourth
Addr
Data
Addr
Data
Addr
Data
1
RA
RD
Reset (8)
1
XXX
F0
Manufacturer ID
4
555
AA
2AA
55
(BA)
555
90
(BA)
X00
0001
Device ID
6
555
AA
2AA
55
(BA)
555
90
(BA)
X01
(10)
Indicator Bits (11)
4
555
AA
2AA
55
(BA)
555
90
(BA)
X07
(11)
Revision ID
4
555
AA
2AA
55
(BA)
555
90
(BA)
X03
Autoselect (9)
Asynchronous Read ((7))
Fifth
Sixth
Seventh
Addr
Data
Addr
Data
(BA)
X0E
(10)
(BA)
X0F
(10)
PA
PD
WBL
PD
CFI (14)
1
55
98
Program
4
555
AA
2AA
55
555
A0
PA
PD
Write to Buffer (15)
6
555
AA
2AA
55
SA
25
SA
WC
Program Buffer to Flash
1
SA
29
Write to Buffer Abort Reset (16)
3
555
AA
2AA
55
555
F0
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Erase Suspend / Program
Suspend (12)
1
BA
B0
Erase Resume / Program Resume
(13)
1
BA
30
Set Configuration Register (19)
4
555
AA
2AA
55
555
D0
X00
CR
Read Configuration Register
4
555
AA
2AA
55
555
C6
X00
CR
Addr
Data
Lock Register Command Set Definitions
Lock
Lock Register
Command Set Entry
3
555
AA
2AA
55
Lock Register Bits
Program
2
XX
A0
00
data
Lock Register Bits
Read
1
(BA0)
00
data
Lock Register
Command Set Exit
(18)
2
XX
90
XX
00
Document Number: 002-00949 Rev. *G
555
40
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Command Sequence
(Notes)
Cycles
Command Definitions (Sheet 2 of 2)
Bus Cycles (Notes 1–6)
First
Addr
Second
Data
Addr
Data
Third
Addr
Fourth
Data
Addr
Data
Fifth
Addr
Data
Sixth
Addr
Data
Seventh
Addr
Data
Secured Silicon Sector
Secured Silicon Sector Command Definitions
Secured Silicon
Sector Entry (17)
3
555
AA
2AA
55
Secured Silicon
Sector Program
2
XX
A0
PA
data
Secured Silicon
Sector Read
1
RA
data
Secured Silicon
Sector Exit
4
555
AA
2AA
55
555
88
555
90
XX
00
Volatile Sector Protection Command Set Definitions
DYB
Volatile Sector
Protection Command
Set Entry (17)
3
555
AA
2AA
55
DYB Set
2
XX
A0
(BA)
SA
00
DYB Clear
2
XX
A0
(BA)
SA
01
DYB Status Read
1
(BA)
SA
RD(0)
Volatile Sector
Protection Command
Set Exit
2
XX
90
XX
00
(BA)
555
E0
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first.
PD(0) = Secured Silicon Sector Lock Bit. PD(0), or bit[0].
PD(3) = Protection Mode OTP Bit. PD(3) or bit[3].
SA = Address of the sector to be verified (in autoselect mode) or erased. SA includes BA. Address bits Amax - A13 uniquely select any sector.
BA = Address of the bank A21-A19.
CR = Configuration Register set by data bits D15-D0.
RD(0) = DQ0 protection indicator bit. If protected, DQ0 = 0, if unprotected, DQ0 = 1.
RD(1) = DQ1 protection indicator bit. If protected, DQ1 = 0, if unprotected, DQ1 = 1.
RD(2) = DQ2 protection indicator bit. If protected, DQ2 = 0, if unprotected, DQ2 = 1.
RD(4) = DQ4 protection indicator bit. If protected, DQ4 = 0, if unprotected, DQ4 = 1.
WBL = Write Buffer Location. Address must be within the same write buffer page as PA.
WC = Word Count. Number of write buffer locations to load minus 1.
Notes:
1. See Table for description of bus operations.
2. All values are in hexadecimal.
3. Except for the read cycle and the fourth cycle of the autoselect command sequence, all bus cycles are write cycles.
4. Data bits DQ15–DQ8 are don’t care in command sequences, except for RD and PD.
5. Unless otherwise noted, address bits Amax–A12 are don’t cares.
6. Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. The system
must write the reset command to return the device to reading array data.
7. No unlock or command cycles required when bank is reading array data.
8. The Reset command is required to return to reading array data (or to the erase-suspend-read mode if previously in Erase Suspend) when a
bank is in the autoselect mode, or if DQ5 goes high (while the bank is providing status information).
9. The fourth cycle of the autoselect command sequence is a read cycle. The system must read device IDs across the 4th, 5th, and 6th cycles,
The system must provide the bank address. See Autoselect Command Sequence on page 31 for more information.
10. See Table for description of bus operations.
11. See the Autoselect Command Sequence on page 31.
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12. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase
Suspend command is valid only during a sector erase operation, and requires the bank address.
13. The Erase Resume command is valid only during the Erase Suspend mode, and requires the bank address.
14. Command is valid when device is ready to read array data or when device is in autoselect mode.
15. The total number of cycles in the command sequence is determined by the number of words written to the write buffer. The maximum number
of cycles in the command sequence is 37.
16. Command sequence resets device for next command after write-to-buffer operation.
17. Entry commands are needed to enter a specific mode to enable instructions only available within that mode.
18. The Exit command must be issued to reset the device into read mode. Otherwise the device will hang.
19. Requires the Reset command to configure the configuration register.
13. Write Operation Status
The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3, DQ5, DQ6, and DQ7. Table
on page 46 and the following subsections describe the function of these bits. DQ7 and DQ6 each offers a method for determining
whether a program or erase operation is complete or in progress.
13.1
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm is in progress or
completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command
sequence. Note that the Data# Polling is valid only for the last word being programmed in the write-buffer-page during Write
Buffer Programming. Reading Data# Polling status on any word other than the last word to be programmed in the writebuffer-page will return false status information.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7
status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs
the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program
address falls within a protected sector, Data# Polling on DQ7 is active for approximately tPSP, then that bank returns to the read
mode.
During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7. When the Embedded Erase algorithm is complete, or
if the bank enters the Erase Suspend mode, Data# Polling produces a “1” on DQ7. The system must provide an address within any
of the sectors selected for erasure to read valid status information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for
approximately tASP, then the bank returns to the read mode. If not all selected sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an
address within a protected sector, the status may not be valid.
Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with DQ6–DQ0 while
Output Enable (OE#) is asserted low. That is, the device may change from providing status information to valid data on DQ7.
Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the
program or erase operation and DQ7 has valid data, the data outputs on DQ6–DQ0 may be still invalid. Valid data on DQ7–DQ0 will
appear on successive read cycles.
Table on page 46 shows the outputs for Data# Polling on DQ7. Figure 13.1 on page 42 shows the Data# Polling algorithm.
Figure 19.8 on page 56 in AC Characteristics shows the Data# Polling timing diagram.
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Figure 13.1 Data# Polling Algorithm
START
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
Yes
No
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid
address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5.
13.2
RDY: Ready
The RDY pin is a dedicated status output that indicates valid output data on A/DQ15–A/DQ0 during burst (synchronous) reads.
When RDY is asserted (RDY = VOH), the output data is valid and can be read. When RDY is de-asserted (RDY = VOL), the system
should wait until RDY is re-asserted before expecting the next word of data.
In synchronous (burst) mode with CE# = OE# = VIL, RDY is de-asserted under the following conditions: during the initial access;
after crossing the internal boundary between addresses 7Eh and 7Fh (and addresses offset from these by a multiple of 64). The
RDY pin will also switch during status reads when a clock signal drives the CLK input. In addition, RDY = VOH when CE# = VIL and
OE# = VIH, and RDY is Hi-Z when CE# = VIH.
In asynchronous (non-burst) mode, the RDY pin does not indicate valid or invalid output data. Instead,
RDY = VOH when CE# = VIL, and RDY is Hi-Z when CE# = VIH.
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13.3
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device
has entered the Erase Suspend mode. Toggle Bit I may be read at any address in the same bank, and is valid after the rising edge
of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. Note that
OE# must be low during toggle bit status reads. When the operation is complete, DQ6 stops toggling.
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately tASP, all
sectors protected toggle time, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase
algorithm erases the unprotected sectors, and ignores the selected sectors that are protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-suspended. When the
device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase
Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erasesuspended. Alternatively, the system can use DQ7 (see Section 13.1, DQ7: Data# Polling on page 41).
If a program address falls within a protected sector, DQ6 toggles for approximately tPSP after the program command sequence is
written, then returns to reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete.
See the following for additional information: (toggle bit flowchart), Figure 19.9 (toggle bit timing diagram), and Table on page 44
(compares DQ2 and DQ6).
13.4
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded
Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE#
pulse in the command sequence.
DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. Note that OE# must be
low during toggle bit status reads. But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by
comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are
selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table on page 46 to compare
outputs for DQ2 and DQ6.
See the following for additional information: (toggle bit flowchart), DQ6: Toggle Bit I (description), Figure 19.9 on page 57 (toggle bit
timing diagram), and Table on page 44 (compares DQ2 and DQ6).
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Figure 13.2 Toggle Bit Algorithm
START
Read Byte
DQ7-DQ0
Address = VA
Read Byte
DQ7-DQ0
Address = VA
DQ6 = Toggle?
No
Yes
No
DQ5 = 1?
Yes
Read Byte Twice
DQ7-DQ0
Adrdess = VA
DQ6 = Toggle?
No
Yes
FAIL
PASS
Note:
The system should recheck the toggle bit even if DQ5 = “1” because the toggle bit may stop toggling as DQ5 changes to “1.” See the subsections on DQ6 and DQ2 for
more information.
DQ6 and DQ2 Indications
If device is
programming,
and the system reads
then DQ6
and DQ2
at any address,
toggles,
does not toggle.
at an address within a sector selected
for erasure,
toggles,
also toggles.
at an address within sectors not
selected for erasure,
toggles,
does not toggle.
actively erasing,
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DQ6 and DQ2 Indications
If device is
and the system reads
then DQ6
and DQ2
at an address within a sector selected
for erasure,
does not toggle,
toggles.
at an address within sectors not
selected for erasure,
returns array data,
returns array data. The system can read from
any sector not selected for erasure.
at any address,
toggles,
is not applicable.
erase suspended,
programming in
erase suspend
13.5
Reading Toggle Bits DQ6/DQ2
Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a
toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read,
the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the
program or erase operation. The system can read array data on DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note
whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is
toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has
successfully completed the program or erase operation. If it is still toggling, the device did not completed the operation successfully,
and the system must write the reset command to return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system
may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous
paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the
algorithm when it returns to determine the status of the operation.
13.6
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5
produces a “1,” indicating that the program or erase cycle was not successfully completed.
The device may output a “1” on DQ5 if the system tries to program a “1” to a location that was previously programmed to “0.” Only
an erase operation can change a “0” back to a “1.” Under this condition, the device halts the operation, and when the timing limit
has been exceeded, DQ5 produces a “1.”
Under both these conditions, the system must write the reset command to return to the read mode (or to the erase-suspend-read
mode if a bank was previously in the erase-suspend-program mode).
13.7
DQ3: Sector Erase Start Timeout State Indicator
After writing a sector erase command sequence, the system may read DQ3 to determine whether or not erasure has begun. (The
sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also
applies after each additional sector erase command. When the time-out period is complete, DQ3 switches from a “0” to a “1.”
After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure
that the device has accepted the command sequence, and then read DQ3. If DQ3 is “1,” the Embedded Erase algorithm has begun;
all further commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is “0,” the device will accept
additional sector erase commands. To ensure the command has been accepted, the system software should check the status of
DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command
might not have been accepted.
Table shows the status of DQ3 relative to the other status bits.
13.8
DQ1: Write to Buffer Abort
DQ1 indicates whether a Write to Buffer operation was aborted. Under these conditions DQ1 produces a ‘1’. The system must issue
the Write to Buffer Abort Reset command sequence to return the device to reading array data. See Write Buffer Programming
Operation on page 18 for more details.
Document Number: 002-00949 Rev. *G
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Write Operation Status
Status
Standard
Mode
Embedded Program Algorithm
Program
Suspend
Mode (3)
Reading within Program Suspended Sector
Erase
Suspend
Mode
Erase-SuspendRead
Write to
Buffer (5)
Embedded Erase Algorithm
DQ7 (2)
DQ6
DQ5 (1)
DQ3
DQ2 (2)
DQ7#
Toggle
0
N/A
No toggle
DQ1 (4)
0
0
Toggle
0
1
Toggle
N/A
Valid data for all address except the address being programed, which will return invalid data
Reading within Non-Program Suspended Sector
Erase
Suspended Sector
Non-Erase Suspended
Sector
Data
1
No toggle
0
N/A
Toggle
N/A
Data
Data
Data
Data
Data
Data
Erase-Suspend-Program
DQ7#
Toggle
0
N/A
N/A
N/A
BUSY State
DQ7#
Toggle
0
N/A
N/A
0
Exceeded Timing Limits
DQ7#
Toggle
1
N/A
N/A
0
ABORT State
DQ7#
Toggle
0
N/A
N/A
1
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to the section
on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
3. Data are invalid for addresses in a Program Suspended sector.
4. DQ1 indicates the Write to Buffer ABORT status during Write Buffer Programming operations.
5. The data-bar polling algorithm should be used for Write Buffer Programming operations. Note that DQ7# during Write Buffer Programming
indicates the data-bar for DQ7 data for the LAST LOADED WRITE-BUFFER ADDRESS location.
14. Absolute Maximum Ratings
Storage Temperature
–65°C to +150°C
Ambient Temperature with Power Applied
–65°C to +125°C
Voltage with Respect to Ground, All Inputs and I/Os
except VPP (1)
–0.5 V to VCC + 0.5 V
VCC (1)
–0.5 V to +2.5 V
VPP (2)
–0.5 V to + 9.5 V
Output Short Circuit Current (3)
100 mA
Notes:
1. Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, input at I/Os may undershoot VSS to –2.0 V for periods of up to 20 ns during voltage
transitions inputs might overshoot to VCC +0.5 V for periods up to 20 ns. See Figure 14.1. Maximum DC voltage on output and I/Os is VCC + 0.5 V. During voltage
transitions outputs may overshoot to VCC + 2.0 V for periods up to 20 ns. See Figure 14.2.
2. Minimum DC input voltage on VPP is –0.5 V. During voltage transitions, VPP may undershoot VSS to –2.0 V for periods of up to 20 ns. See Figure 14.1. Maximum DC
input voltage on VPP is +9.5 V which may overshoot to +10.5 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.
4. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum
rating conditions for extended periods may affect device reliability.
Figure 14.1 Maximum Negative Overshoot Waveform
20 ns
20 ns
+0.9 V
–2.0 V
20 ns
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Figure 14.2 Maximum Positive Overshoot Waveform
20 ns
VCC
+2.0 V
2.0 V
20 ns
20 ns
15. Operating Ranges
Ambient Temperature (TA), Wireless (W) Device
–25°C to +85°C
Ambient Temperature (TA) during Accelerated Sector Erase
+20°C to +40°C
VCC Supply Voltages
VCC min
+1.70V
VCC max
+1.95V
Notes:
1. Operating ranges define those limits between which the functionality of the device is guaranteed.
2. Industrial Temperature Range (-40°C to +85°C) is also available. For device specification differences, please refer to the Specification Supplement with Publication
Number S29VS064R_XS064R_SP.
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16. DC Characteristics
CMOS Compatible
Parameter
Description
Test Conditions (1)
Min
Typ
Max
Unit
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCC max
±1
µA
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCC max
±1
µA
CE# = VIL, OE# = VIH, burst
length = 8
ICCB
VCC Active Burst Read Current (5)
CE# = VIL, OE# = VIH, burst
length = 16
CE# = VIL, OE# = VIH, burst
length = continuous
66 MHz
31
34
83 MHz
35
38
108 MHz
39
44
66 MHz
24
26
83 MHz
28
30
108 MHz
32
36
66 MHz
24
26
83 MHz
28
30
108 MHz
32
36
5 MHz
20
40
ICC1
VCC Active Asynchronous Read Current (2)
CE# = VIL, OE# = VIH
ICC2
VCC Active Write Current (3)
CE# = VIL, OE# = VIH, VPP = VIH
ICC3
VCC Standby Current (4)
CE# = VIH, RESET# = VIH
ICC4
VCC Reset Current
RESET# = VIL, CLK = VIL
66 MHz
61
66
ICC5
VCC Active Current
(Read While Write)
CE# = VIL, OE# = VIH (8)
83 MHz
65
70
108 MHz
71
76
1 MHz
mA
mA
10
20
mA
30
40
mA
40
70
µA
150
250
µA
mA
ICC6
VCC Sleep Current
CE# = VIL, OE# = VIH
40
70
µA
IPPW
Accelerated Program Current (6)
VPP = 9 V
20
30
mA
IPPE
Accelerated Erase Current (6)
VPP = 9 V
20
30
mA
VIL
Input Low Voltage
–0.5
0.4
V
VIH
Input High Voltage
VIO – 0.4
VIO + 0.2
V
0.1
V
VOL
Output Low Voltage
IOL = 100 µA, VCC = VCC min
VOH
Output High Voltage
IOH = –100 µA, VCC = VCC min
VID
Voltage for Accelerated Program
8.5
9.5
V
Low VCC Lock-out Voltage
1.0
1.1
V
VLKO
VIO – 0.1
V
Notes:
1. Maximum ICC specifications are tested with VCC = VCCmax.
2. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Device enters automatic sleep mode when addresses are stable for tACC + 20 ns. Typical sleep mode current is equal to ICC3.
5. Specifications assume 8 I/Os switching.
6. Not 100% tested. VPP is not a power supply pin.
7. While measuring Output Leakage Current, CE# should be at VIH.
8. In Continuous Mode.
Document Number: 002-00949 Rev. *G
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17. Test Conditions
Figure 17.1 Test Setup
Device
Under
Test
CL
Test Specifications
Test Condition
Output Load Capacitance, CL
(including jig capacitance)
Input Rise and Fall Times
All Speeds
Unit
30
pF
66 MHz
3
ns
83 MHz
2.5
ns
1.85
ns
108 MHz
Input Pulse Levels
0.0–VCC
V
Input timing measurement reference levels
VIO/2
V
Output timing measurement reference levels
VIO/2
V
18. Key to Switching Waveforms
Waveform
Inputs
Outputs
Steady
Changing from H to L
Changing from L to H
18.1
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High-Z)
Switching Waveforms
Figure 18.1 Input Waveforms and Measurement Levels
VIO
In
VIO/2
Measurement Level
VIO/2
Output
0.0 V
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19. AC Characteristics
19.1
VCC Power-up
Parameter
Description
Test Setup
Speed
Unit
tVCS
VCC Setup Time
Min
300
µs
tVIOS
VIO Setup Time
Min
300
µs
tRH
Time between RESET# (high) and CE# (low)
Min
200
ns
Notes:
1. Reset# must be high after VCC and VIO are higher than VCC minimum.
2. VCC  VIO – 200 mV during power-up.
3. VCC and VIO ramp rate could be non-linear.
4. VCC and VIO are recommended to be ramped up simultaneously.
Figure 19.1 VCC Power-up Diagram
tVCS
VCC min
VCC
tVIOS
VIO min
VIO
VIH
RESET#
tRH
CE#
Parameter
66 MHz
108 MHz
Unit
fCLK
CLK Frequency
Description
Max
66
108 (1)
MHz
tCLK
CLK Period
Min
15.0
9.6
ns
tCH
CLK High Time
Min
6.1
CLK Low Time
0.40 tCLK
ns
tCL
tCR
CLK Rise Time
Max
3
1.85
ns
tCF
CLK Fall Time
Notes:
1. Clock jitter of ±5% permitted.
2. Not 100% tested.
Figure 19.2 CLK Characterization
tCLK
tCH
CLK
Document Number: 002-00949 Rev. *G
tCR
tCL
tCF
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19.2
Synchronous/Burst Read
Parameter
Description
JEDEC
(66 MHz)
(83 MHz)
(108 MHz)
Unit
7.6
ns
Standard
tIACC
Initial Access Time
Max
tBACC
Burst Access Time Valid Clock to Output Delay
Max
80
tAVDS
AVD# Setup Time to CLK
Min
4
ns
11.2
9
ns
tAVDH
AVD# Hold Time from CLK
Min
3
ns
tAVDO
AVD# High to OE# Low
Min
0
ns
tACS
Address Setup Time to CLK
Min
4
ns
tACH
Address Hold Time from CLK
Min
6
ns
tBDH
Data Hold Time from Next Clock Cycle
Min
tOE
Output Enable to RDY Low
Max
15
ns
3
3
2
ns
tCEZ
Chip Enable to High-Z (1)
Max
10
ns
tOEZ
Output Enable to High-Z (1)
Max
10
ns
tCES
CE# Setup Time to CLK
Min
tRDYS
RDY Setup Time to CLK
Min
3.9
4
3
2
ns
ns
tRACC
Ready access time from CLK
Max
11.2
9
7.6
ns
Note:
1. Not 100% tested.
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Figure 19.3 Burst Mode Read
5 cycles for initial access shown.
tCES
tCEZ
15.2 ns typ. (66 MHz)
CE#
1
2
3
4
5
6
7
CLK
tAVDS
AVD#
tAVDH
tAVDO
tACS
Amax-A16
Aa
tBACC
tACH
Hi-Z
Aa
A/DQ15A/DQ0 (n)
tIACC
Da
Da + 1
Da + 2
Da + 3
Da + n
tOEZ
tBDH
OE#
tOE
RDY (n)
Hi-Z
tCR
Da
Da + 2
Da + 2
Da + n
Hi-Z
Hi-Z
Da
Da + 1
Da + 1
Da + 1
Da + n
Hi-Z
Hi-Z
Hi-Z
A/DQ15A/DQ0 (n + 3)
RDY (n + 3)
Da + 1
Hi-Z
A/DQ15A/DQ0 (n + 2)
RDY (n + 2)
tRDYS
Hi-Z
A/DQ15A/DQ0 (n + 1)
RDY (n + 1)
tRACC
Hi-Z
Da
Da
Da
Da
Da + n
Hi-Z
Hi-Z
Notes:
1. Figure shows total number of clock set to five.
2. If any burst address occurs at “address + 1”, “address + 2”, or “address +3”, additional clock delays are inserted, and are indicated by RDY.
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19.3
Asynchronous Read
Parameter
Description
JEDEC
Unit
Standard
tCE
Access Time from CE# Low
Max
80
ns
tACC
Asynchronous Access Time
Max
80
ns
tAVDP
AVD# Low Time
Min
6
ns
tAAVDS
Address Setup Time to Rising Edge of AVD
Min
4
ns
tAAVDH
Address Hold Time from Rising Edge of AVD
Min
3.5
ns
Output Enable to Output Valid
Max
18
ns
Min
0
ns
Min
10
ns
Max
10
ns
tOE
Read
tOEH
Output Enable Hold Time
tOEZ
Output Enable to High-Z (1)
Toggle and Data# Polling
Note:
1. Not 100% tested.
Figure 19.4 Asynchronous Mode Read
CE#
tOE
OE#
tOEH
WE#
tCE
A/DQ15–
A/DQ0
tOEZ
RA
Valid RD
tACC
RA
Amax–A16
tAAVDH
AVD#
tAVDP
tAAVDS
Note:
RA = Read Address, RD = Read Data.
19.4
Hardware Reset (RESET#)
Warm-Reset
Parameter
JEDEC
Document Number: 002-00949 Rev. *G
Std
Description
All Speed Options
Unit
tRP
RESET# Pulse Width
Min
50
ns
tRH
Reset High Time
Before Read
Min
200
ns
tRPH
RESET# Low to CE#
Low
Min
10
µs
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Figure 19.5 Reset Timings
.
CE#, OE#
tRH
RESET#
tRP
tRPH
19.5
Erase/Program Operations
Parameter
Description
Unit
JEDEC
Standard
tAVAV
tWC
Write Cycle Time (1)
Min
tAVWL
tAS
Address Setup Time
Min
4
ns
tWLAX
tAH
Address Hold Time
Min
3.5
ns
60
ns
tAVDP
AVD# Low Time
Min
6
ns
tAAVDS
Address Setup to Rising of AVD#
Min
4
ns
tAAVDH
Address Hold from Rising of AVD#
Min
3.5
ns
tDVWH
tDS
Data Setup Time
Min
20
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tGHWL
tGHWL
Read Recovery Time Before Write
Min
0
ns
tELWL
tCS
CE# Setup Time to WE#
Min
4
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP/tWRL
Write Pulse Width
Min
25
ns
tVLWH
AVD# Disable to WE# Disable
Min
23.5
ns
tWEA
tWHWL
WE# Disable to AVD# Enable
Min
9.6
ns
tCR
CE# Low to RDY Valid
Max
10
ns
tCEZ
CE# Disable to Output High-Z
Max
10
ns
tWEH
OE# Disable to WE# Enable
Min
4
ns
tWPH
Write Pulse Width High
Min
20
ns
tSR/W
Latency Between Read and Write Operations
Min
0
ns
tVPP
VPP Rise and Fall Time
Min
500
ns
tVPS
VPP Setup Time (During Accelerated Programming)
Min
1
µs
tVCS
VCC Setup Time
Min
50
µs
tESL
Erase Suspend Latency
Max
30
µs
tPSL
Program Suspend Latency
Max
30
µs
tPSP
Toggle Time During Programming Within a Protected Sector
Typ
20
µs
µs
tASP
Toggle Time During Sector Protection
Typ
20
tWEP
Noise Pulse Margin on WE#
Max
3
ns
tERS
ER to ES
Min
30
µs
tPRS
PR to PS
Min
30
µs
Notes:
1. Not 100% tested.
2. See Erase and Programming Performance on page 60 for more information.
3. Does not include the preprogramming time.
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Figure 19.6 Program Operation Timings
Program Command Sequence (last two cycles)
Read Status Data
tAS
AVD
tAH
tAVDP
Amax–A16
VA
PA
A/DQ15–
A/DQ0
555h
PA
A0h
VA
PD
VA
In
Progress
VA
Complete
tDS
tDH
CE#
tCH
OE#
tWP
WE#
tCS
tWHWH1
tWPH
tWC
VIH
CLK
VIL
tVCS
VCC
Notes:
1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits.
2. “In progress” and “complete” refer to status of program operation.
3. Amax–A16 are don’t care during command sequence unlock cycles.
Document Number: 002-00949 Rev. *G
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Figure 19.7 Chip/Sector Erase Operations
Erase Command Sequence (last two cycles)
Read Status Data
tAS
AVD
tAH
tAVDP
VA
SA
Amax–A16
555h for
chip erase
A/DQ15–
A/DQ0
2AAh
SA
55h
VA
10h for
chip erase
VA
30h
In
Progress
VA
Complete
tDS
tDH
CE#
tCH
OE#
tWP
WE#
tWHWH2
tCS
tWPH
tWC
VIH
CLK
VIL
tVCS
VCC
Notes:
1. SA is the sector address for Sector Erase.
2. Address bits Amax–A16 are don’t cares during unlock cycles in the command sequence.
Figure 19.8 Data# Polling Timings (During Embedded Algorithm)
AVD#
tCEZ
tCE
CE#
tCH
tOEZ
tOE
OE#
tOEH
WE#
tACC
Amax–A16
VA
A/DQ15–
A/DQ0
VA
High Z
VA
High Z
Status Data
VA
Status Data
Notes:
1. All status reads are asynchronous.
2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is complete, and Data# Polling will output true data.
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Figure 19.9 Toggle Bit Timings (During Embedded Algorithm)
AVD#
tCEZ
tCE
CE#
tCH
tOEZ
tOE
OE#
tOEH
WE#
tACC
Amax–A16
VA
A/DQ15–
A/DQ0
VA
High Z
VA
High Z
VA
Status Data
Status Data
Notes:
1. All status reads are asynchronous.
2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is complete, the toggle bits will stop toggling.
Figure 19.10 8- and 16-Word Linear Burst Address Wrap Around
Address wraps back to beginning of address group.
Initial Access
CLK
39
Address (hex)
A/DQ15–
A/DQ0
39
3A
D0
3B
D1
3C
D2
3D
D3
3E
D4
3F
D5
38
D6
D7
VIH
AVD#
OE#
VIL
VIH
VIL
CE#
VIL
(stays low)
(stays low)
Note:
8-word linear burst mode shown. 16-word linear burst read mode behaves similarly. D0 represents the first word of the linear burst.
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Figure 19.11 Latency with Boundary Crossing
Address boundary occurs every 128 words, beginning at address
00007Fh: (0000FFh, 00017Fh, etc.) Address 000000h is also a boundary crossing.
C124
C125
C126
7C
7D
7E
C127
C127
C128
C129
80
81
C130
C131
CLK
Address (hex)
AVD#
7F
7F
RDY(1)
tRACC
latency
tRACC
RDY(2)
OE#,
CE#
83
(stays high)
tRACC
Data
82
tRACC
latency
D124
D125
D126
D127
D128
D129
D130
(stays low)
Notes:
1. Cxx indicates the clock that triggers data Dxx on the outputs; for example, C60 triggers D60.
2. At frequencies less than or equal to 66 Mhz, there is no latency.
Document Number: 002-00949 Rev. *G
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Figure 19.12 Back-to-Back Read/Write Cycle Timings
Last Cycle in
Program or
Sector Erase
Command Sequence
Read status (at least two cycles) in same bank
and/or array data from other bank
tWC
tRC
Begin another
write or program
command sequence
tRC
tWC
CE#
OE#
tOE
tOEH
tGHWL
WE#
tWPH
tWP
tDS
tOEZ
tACC
tOEH
tDH
A/DQ15–
A/DQ0
PA/SA
PD/30h
RA
RD
RA
RD
555h
AAh
tSR/W
Amax–A16
PA/SA
RA
RA
tAS
AVD#
tAH
Note:
Breakpoints in waveforms indicate that system may alternately read array data from the “non-busy bank” while checking the status of the program
or erase operation in the “busy” bank. The system should read status twice to ensure valid information.
Document Number: 002-00949 Rev. *G
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20. Erase and Programming Performance
Parameter
Typ (1)
Max (2)
32 kword
VCC
0.8
3.5
8 kword
VCC
0.35
2
VCC
103
453
Sector Erase Time
Chip Erase Time
s
VPP
103
453
Single Word Programming Time
VCC
170
800
Effective Word Programming Time
utilizing Program Write Buffer
VCC
14.1
94
VPP
9
60
Total 32-Word Buffer Programming
Time
VCC
450
3000
VPP
288
1920
VCC
59
78.6
VPP
38
52
Chip Programming Time (4)
Unit
Comments
Excludes 00h programming prior to erasure (Note 5)
µs
s
Excludes system level overhead (Note 6)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 1.8 V VCC, 10,000 cycles typical. Additionally, programming typicals
assume checkerboard pattern.
2. Under worst case conditions of -25°C, VCC = 1.70 V, 100,000 cycles.
3. Effective write buffer specification is based upon a 32-word write buffer operation.
4. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words program faster than
the maximum program times listed.
5. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table on page 39
for further information on command definitions.
21. BGA Ball Capacitance
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
CIN
Input Capacitance
VIN = 0
4.2
5.0
Unit
pF
COUT
Output Capacitance
VOUT = 0
5.4
6.5
pF
CIN2
Control Pin Capacitance
VIN = 0
3.9
4.7
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Document Number: 002-00949 Rev. *G
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22. Revision History
Spansion Publication Number: S29VS_XS064R_00
Section
Description
Revision 01 (April 23, 2010)
Initial release
Revision 02 (August 6, 2010)
Performance Characteristics
Updated table: Typical Program & Erase Times
Connection Diagram
Updated diagram to show outrigger balls
DC Characteristics: CMOS Compatible
Updated table: ICCB, ICC2, and ICC5
Updated table:
Erase and Programming Performance
Changed Typ and Max values for Single Word Programming Time
Changed Typ values for buffer and chip programming times
Synchronous/Burst Read
Updated tOE description
Asynchronous Read
Updated tOE value
Revision 03 (October 4, 2010)
DC Characteristics
CMOS Compatible table: Changed typical values for ICC3 and ICC6
Revision 04 (October 27, 2010)
Corrected CR15 and CR11-13 settings description
Configuration Register
Removed Note 3
DC Characteristics: CMOS Compatible
Removed Note 9
Revision 05 (December 9, 2010)
Global
Added references to Industrial Specification Supplement
Volatile Sector Protection Command
Set
Command Definitions table: Corrected missing note references for CFI and Set Configuration
Register
Removed orphan notes
Revision 06 (July 22, 2011)
Factory Secured Silicon Sector
Reworded to indicate that sector is unprogrammed by default
Erase and Programming Performance
Corrected note 2 for worst case condition temperature
Revision 06 (August 7, 2012)
Synchronous (Burst) Read Mode and
Configuration Register
Removed text that implied output drive strength can be controlled through the configuration register
Document History Page
Document Title:S29VS064R, S29XS064R
64 Mbit (4M x 16-bit), 1.8 V, Multiplexed, Burst MirrorBit® Flash
Document Number: 002-00949
Rev.
ECN No.
Orig. of
Change
**
-
WIOB
Submission
Date
Description of Change
04/23/2010 Initial release
Document Number: 002-00949 Rev. *G
Page 61 of 63
S29VS064R
S29XS064R
Document History Page (Continued)
Document Title:S29VS064R, S29XS064R
64 Mbit (4M x 16-bit), 1.8 V, Multiplexed, Burst MirrorBit® Flash
Document Number: 002-00949
Rev.
ECN No.
Orig. of
Change
*A
-
WIOB
08/06/2010 Performance Characteristics Updated table: Typical Program & Erase
Times
Connection Diagram Updated diagram to show outrigger balls
DC Characteristics: CMOS Compatible Updated table: ICCB, ICC2, and
ICC5
Erase and Programming Performance
Updated table:
Changed Typ and Max values for Single Word Programming Time
Changed Typ values for buffer and chip programming times
Synchronous/Burst Read Updated tOE description
Asynchronous Read Updated tOE value
*B
-
WIOB
10/04/2010 DC Characteristics
CMOS Compatible table: Changed typical values for ICC3 and ICC6
*C
-
WIOB
10/27/2010 Configuration Register
Corrected CR15 and CR11-13 settings description
Removed Note 3
DC Characteristics: CMOS Compatible Removed Note 9
*D
-
WIOB
12/09/2010 Global Added references to Industrial Specification Supplement
Volatile Sector Protection Command Set
Command Definitions table: Corrected missing note references for CFI and
Set Configuration
Register
Removed orphan notes
*E
-
WIOB
*F
-
WIOB
07/22/2011 Factory Secured Silicon Sector Erase and Programming Performance
Reworded to indicate that sector is unprogrammed by default
Corrected note 2 for worst case condition temperature
08/07/2012 Synchronous (Burst) Read Mode and Configuration Register
*G
5042966
WIOB
Submission
Date
Description of Change
Removed text that implied output drive strength can be controlled through
the configuration register
12/17/2015 Changed status from Advance to production
Updated to Cypress Template
Document Number: 002-00949 Rev. *G
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Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
Products
PSoC® Solutions
Automotive..................................cypress.com/go/automotive
psoc.cypress.com/solutions
Clocks & Buffers ................................ cypress.com/go/clocks
PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP
Interface......................................... cypress.com/go/interface
Cypress Developer Community
Lighting & Power Control............ cypress.com/go/powerpsoc
Community | Forums | Blogs | Video | Training
Memory........................................... cypress.com/go/memory
PSoC ....................................................cypress.com/go/psoc
Touch Sensing .................................... cypress.com/go/touch
Technical Support
cypress.com/go/support
USB Controllers....................................cypress.com/go/USB
Wireless/RF .................................... cypress.com/go/wireless
© Cypress Semiconductor Corporation, 2010-2015. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 002-00949 Rev. *G
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Revised December 17, 2015
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Cypress , Spansion , MirrorBit , MirrorBit Eclipse™, ORNAND™, EcoRAM™, HyperBus™, HyperFlash™, and combinations thereof, are trademarks and registered trademarks of Cypress
Semiconductor Corp. All products and company names mentioned in this document may be the trademarks of their respective holders.
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