BSS84LT1 Power MOSFET 130 mA, 50 V P−Channel SOT−23

BSS84LT1 Power MOSFET 130 mA, 50 V P−Channel SOT−23
BSS84LT1
Power MOSFET
130 mA, 50 V
P−Channel SOT−23
These miniature surface mount MOSFETs reduce power loss
conserve energy, making this device ideal for use in small power
management circuitry. Typical applications are DC−DC converters,
load switching, power management in portable and battery−powered
products such as computers, printers, cellular and cordless telephones.
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130 mA, 50 V RDS(on) = 10 Features
• Energy Efficient
• Miniature SOT−23 Surface Mount Package Saves Board Space
• Pb−Free Package is Available
P−Channel
3
1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
50
Vdc
Gate−to−Source Voltage − Continuous
VGS
± 20
Vdc
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp ≤ 10 s)
ID
IDM
130
520
Total Power Dissipation @ TA = 25°C
PD
225
mW
Operating and Storage Temperature
Range
TJ, Tstg
− 55 to
150
°C
RJA
556
°C/W
TL
260
°C
Thermal Resistance − Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
2
mA
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
3
SOT−23
CASE 318
STYLE 21
1
2
MARKING DIAGRAM & PIN ASSIGNMENT
3
Drain
PD
M
= Device Code
= Date Code
PDM
1
Gate
2
Source
ORDERING INFORMATION
Device
BSS84LT1
BSS84LT1G
Package
Shipping†
SOT−23
3000 Tape & Reel
SOT−23
(Pb−Free)
3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 5
1
Publication Order Number:
BSS84LT1/D
BSS84LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
50
−
−
Vdc
−
−
−
−
−
−
0.1
15
60
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Adc
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
−
−
±10
nAdc
Gate−Source Threaded Voltage
(VDS = VGS, ID = 250 A)
VGS(th)
0.9
−
2.0
Vdc
Static Drain−to−Source On−Resistance
(VGS = 5.0 Vdc, ID = 100 mAdc)
RDS(on)
−
5.0
10
|yfs|
50
−
−
mS
pF
ON CHARACTERISTICS (Note 1)
Transfer Admittance
(VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz)
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS = 5.0 Vdc
Ciss
−
30
−
Output Capacitance
VDS = 5.0 Vdc
Coss
−
10
−
Transfer Capacitance
VDG = 5.0 Vdc
Crss
−
5.0
−
td(on)
−
2.5
−
tr
−
1.0
−
td(off)
−
16
−
tf
−
8.0
−
QT
−
6000
−
pC
IS
−
−
0.130
A
ISM
−
−
0.520
VSD
−
−
2.2
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
VDD = −15 Vdc, ID = −2.5 Adc,
RL = 50 Turn−Off Delay Time
Fall Time
Gate Charge
ns
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage (Note 2)
VGS = 0 V, IS = 130 mA
V
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
0.5
25°C
VDS = 10 V
0.5
− 55°C
150°C
0.4
3.25 V
0.4
0.35
0.3
3.0 V
0.25
0.3
0.2
0.2
2.75 V
0.15
0.1
0
VGS = 3.5 V
TJ = 25°C
0.45
I D , DRAIN CURRENT (AMPS)
I D , DRAIN CURRENT (AMPS)
0.6
2.5 V
0.1
2.25 V
0.05
1
1.5
2
2.5
3
3.5
0
4
0
1
2
3
4
5
6
7
8
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
Figure 2. On−Region Characteristics
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2
9
10
BSS84LT1
9
VGS = 4.5 V
8
150°C
7
6
25°C
5
4
−55°C
3
2
0
0.1
0.2
0.3
0.4
0.5
0.6
R DS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS
R DS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS
TYPICAL ELECTRICAL CHARACTERISTICS
7
150°C
VGS = 10 V
6.5
6
5.5
5
4.5
4
25°C
3.5
3
−55°C
2.5
2
0.1
0
0.2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
VGS = 10 V
ID = 0.52 A
1.4
VGS = 4.5 V
ID = 0.13 A
1.2
1
0.8
−5
45
95
8
6
5
4
ID = 0.5 A
3
2
1
0
145
VDS = 40 V
TJ = 25°C
7
0
500
TJ, JUNCTION TEMPERATURE (°C)
1000
Figure 6. Gate Charge
1
TJ = 150°C
0.1
25°C
−55°C
0.01
0.001
0
1500
QT, TOTAL GATE CHARGE (pC)
Figure 5. On−Resistance Variation with Temperature
I D , DIODE CURRENT (AMPS)
RDS(on) , DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2
0.6
−55
0.6
Figure 4. On−Resistance versus Drain Current
Figure 3. On−Resistance versus Drain Current
1.6
0.5
0.4
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
1.8
0.3
0.5
1.0
1.5
2.0
2.5
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
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3
3.0
2000
BSS84LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
A
L
3
1
V
B S
2
G
DIM
A
B
C
D
G
H
J
K
L
S
V
C
D
H
J
K
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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4
For additional information, please contact your
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BSS84LT1/D
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