UPA1705 Data Sheet

UPA1705 Data Sheet
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April 1st, 2010
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1705
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
PACKAGE DRAWING (Unit : mm)
This product is N-Channel MOS Field Effect Transistor
designed for DC/DC Converters and power management
8
5
; Source
1, 2, 3
; Gate
4
5, 6, 7, 8 ; Drain
application of notebook computers.
FEATURES
• Super low on-state resistance
1
4.4
0.15
• Low Ciss : Ciss = 750 pF TYP.
6.0 ±0.3
4
5.37 Max.
0.8
+0.10
–0.05
1.8 Max.
RDS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, I D = 4.0 A)
1.44
RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, I D = 4.0 A)
0.05 Min.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
1.27
0.40
0.5 ±0.2
0.10
0.78 Max.
+0.10
–0.05
0.12 M
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1705G
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, All terminals are connected.)
Drain to Source Voltage (VGS = 0)
VDSS
30
V
Gate to Source Voltage (VDS = 0)
VGSS
±25
V
Drain Current (DC)
ID(DC)
±8
A
ID(pulse)
±50
A
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to + 150
°C
Drain Current (Pulse) Note1
Total Power Dissipation (TA = 25 °C)
Note2
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Mounted on ceramic substrate of 1200 mm2 x 1.7 mm
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
Exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G12712EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark ★ shows major revised points.
©
1998, 1999
µPA1705
ELECTRICAL CHARACTERISTICS (T A = 25 °C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
Drain to Source On-state Resistance
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
RDS(on)1
VGS = 10 V, ID = 4.0 A
19
27
mΩ
RDS(on)2
VGS = 4.5 V, ID = 4.0 A
30
40
mΩ
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 4.0 A
4.0
8.4
Drain Leakage Current
IDSS
VDS = 30 V, VGS = 0 V
10
µA
Gate to Source Leakage Current
IGSS
VGS = ±25 V, VDS = 0 V
±10
µA
Input Capacitance
Ciss
VDS = 10 V
750
pF
Output Capacitance
Coss
VGS = 0 V
350
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
160
pF
Turn-on Delay Time
td(on)
ID = 4.0 A
19
ns
VGS(on) = 10 V
107
ns
td(off)
VDD = 15 V
50
ns
tf
RG = 10 Ω
32
ns
Total Gate Charge
QG
ID = 8.0 A
19
nC
Gate to Source Charge
QGS
VDD = 24 V
2.4
nC
Gate to Drain Charge
QGD
VGS = 10 V
6.3
nC
VF(S-D)
IF = 8.0 A, VGS = 0 V
0.8
V
Reverse Recovery Time
trr
IF = 8.0 A, VGS = 0 V
33
ns
Reverse Recovery Charge
Qrr
di/dt = 100A/µs
22
nC
Gate to Source Cut-off Voltage
Rise Time
tr
Turn-off Delay Time
Fall Time
Body Diode Forward Voltage
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
IG = 2 mA
D.U.T.
VGS
RL
VGS
PG.
RG
RG = 10 Ω
Wave Form
0
VGS (on)
10 %
90 %
PG.
VDD
90 %
ID
90 %
ID
VGS
0
I
D
Wave Form
t
t = 1µ s
Duty Cycle ≤ 1 %
2
S
0
10 %
10 %
tr
td (on)
ton
td (off)
tf
toff
Data Sheet G12712EJ2V0DS
50 Ω
RL
VDD
µPA1705
TYPICAL CHARACTERISTICS (T A = 25 °C, All terminals are connected.)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
2.8
100
80
60
40
20
0
20
40
60
80
2.0
1.6
1.2
0.8
0.4
0
100 120 140 160
TA - Ambient Temperature - ˚C
★
20
40
60
80
100 120 140 160
TA - Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
10
ID(pulse) = 50 A
d
ite
im )
L
)
V
on
S(
10
RD GS =
(V
ID(DC) = 8 A
PW
PW
Remark
Mounted on ceramic substrate of 2000 mm2 × 1.7 mm
=1
ms
0
PW
ms
Po
=1
we
00
rD
ms
iss
ipa
tio
nL
im
ite
d
1
=1
0.1
0.01
0.1
TA = 25˚C
Single Pulse
1
10
30
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
rth(t) - Transient Thermal Resistance - ˚C/W
ID - Drain Current - A
Mounted on ceramic
substrate of
1200 mm2 × 1.7 mm
2.4
100
10
1
0.1
Mounted on ceramic
substrate of
1200 mm 2 to 1.7 mm
Single Pulse
Channel to Ambient
0.01
0.001
100 µ
1m
10 m
100 m
1
10
100
1000
10 000
PW - Pulse Width - s
Data Sheet G12712EJ2V0DS
3
µPA1705
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
Pulsed
ID - Drain Current - A
ID - Drain Current - A
20
10
TA = 125 ˚C
75 ˚C
25 ˚C
–25 ˚C
1
VGS = 10 V
VGS = 4.5 V
10
0.1
0.01
0
VDS = 10 V
6
8
4
2
0
VGS - Gate to Source Voltage - V
TA = 125 ˚C
75 ˚C
25 ˚C
–25 ˚C
0.1
1
10
100
RDS(on) - Drain to Source On-State Resistance - mΩ
ID - Drain Current - A
4
RDS(on) - Drain to Source On-State Resistance - mΩ
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
150
ID = 4 A
100
50
0
60
50
40
VGS = 4.5 V
30
20
VGS=10 V
10
0
1
10
100
10
15
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
Pulsed
70
5
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
VGS(off) - Gate to Source Cutoff Voltage - V
| yfs | - Forward Transfer Admittance - S
VDS = 10 V
Pulsed
1
0.8
0.6
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
0.4
0.2
VGS = 0 V
IF = 8 A
2.0
1.0
0
ID - Drain Current - A
–20 0
20 40 60 80 100 120 140 160
Tch - Channel Temperature - ˚C
Data Sheet G12712EJ2V0DS
µPA1705
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
RDS(on) - Drain to Source On-State Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Pulsed
40
ISD - Diode Forward Current - A
50
VGS = 4.5 V
30
VGS = 10 V
20
10
100
10
VGS = 0 V
1
0.1
ID = 4 A
–20
0
20
40
0
60 80 100 120 140 160
Tch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
VDS = 10 V
VGS = 0 V
f = 1 MHz
1 000
Ciss
Coss
100
10
0.1
Crss
1
10
1 000
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
1 000 0
100
tr
100
td(off)
tf
td(on)
10
1
0.1
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
40
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
di/dt = 100 A/ µs
VGS = 0
100
10
1
0.1
1
10
VDD = 15 V
VGS(on) = 10 V
RG = 10 Ω
10
100
1
VGS - Drain to Source Voltage - V
1 000
1.5
1.0
0.5
VSD - Source to Drain Voltage - V
100
ID = 8 A
14
30
20
12
10
VGS
VDD = 24 V
15 V
6V
8
6
4
10
2
VDS
0
IF - Diode Current - A
5
10
15
20
VGS - Gate to Source Voltage - V
0
0
QG - Gate Charge - nC
Data Sheet G12712EJ2V0DS
5
µPA1705
[MEMO]
6
Data Sheet G12712EJ2V0DS
µPA1705
[MEMO]
Data Sheet G12712EJ2V0DS
7
µPA1705
• The information in this document is current as of May, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
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