MIMMK130S160UA
MIMMK130S160UA
1600V 130A thyristor Module
RoHS Compliant
Features
· Isolation voltage 3500 V~
· Industrial Standard Package
· High Surge Capability
· Glass Passivated Chips
· Simple Mounting
· Electrically Isolated by DBC Ceramic
Applications
· DC Motor Control and Drives
· Battery Charges
· Welders
· Power Converters
· Lighting Control
· Heat and Temperature Control
Advantages
· Space and weight savings
· Improved temperature and power cycling
ABSOLUTE MAXIMUM RATINGS
Symbol
Test Condition
VRRM
TC=25°C unless otherwise specified
Value
Unit
1600
V
IT(AV)
TC=85 , 180° conduction, half sine wave;
130
A
IT(RMS)
as AC switch;
300
A
TJ=45 , t=10ms (50Hz), sine, VR=0;
3200
TJ=45 , t=8.3 ms (60Hz), sine, VR=0;
3360
TJ=45 , t=10ms (50Hz), sine, VR=VRRM;
2700
TJ=45 , t=8.3 ms (60Hz), sine, VR= VRRM;
2800
52
ITSM
TJ=45 , t=10ms (50Hz), sine, VR=0;
I2t
TJ=45 , t=8.3 ms (60Hz), sine, VR=0;
A
TJ=45 , t=10ms (50Hz), sine, VR=VRRM;
57
37
TJ=45 , t=8.3 ms (60Hz), sine, VR= VRRM;
39
IDRM/IRRM
TJ=125 , VD=VR=1600V;
50
mA
dV/dt
TJ =125 , exponential to 67% rated VDRM
1000
V/us
VISOL
50Hz, all terminals shorted, t=1s, IISOL≤1mA ;
3500
V~
TJ
Max. junction operating temperature range
-40~125
TSTG
Max. storage temperature range
-40~150
K A2s
℃
MIMMK130S160UA
ELECTRICAL CHARACTERISTICS
Symbol Test Condition
TC=25°C unless otherwise specified
Min. Typ. Max.
Unit
16.7% x π x IAV < I <π x IAV,TJ =130°C;
0.86
V
I > π x IAV , TJ =130°C;
1.05
V
16.7% x π x IAV < I <π x IAV,TJ =130°C;
2.02
mΩ
I > π x IAV , TJ =130°C;
1.65
mΩ
IH
VAK= 6V, initial IT=30A;
200
mA
IL
Anode supply =6V, resistive load=1Ω,
400
mA
VTO
rt
gate pulse =10V, 100us;
VTM
ITM=408A, td=10 ms, half sine;
PGM
tp≤5ms, Tj=125°C;
12
W
PGM(AV)
f=50Hz, Tj=125°C;
3
W
3
A
10
V
IGM
-VGT
1.57
V
tp≤5ms, Tj=125°C;
VA=6V, RA=1Ω, Tj=-40°C;
VGT
IGT
VGD
IGD
di/dt
4
VA=6V, RA=1Ω;
2.5
VA=6V, RA=1Ω, Tj=125°C;
1.7
VA=6V, RA=1Ω, Tj=-40°C;
270
VA=6V, RA=1Ω;
150
VA=6V, RA=1Ω, Tj=125°C;
80
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Test Condition
A
0.3
V
10
mA
300
A/us
VAK=VDRM, Tj=125
ITM=400A, rated VDRM, Tj=125
V
TC=25°C unless otherwise specified
value
Unit
Rthjc
DC operation, per junction;
0.20
K/W
RTHCS
Mounting surface smooth,flat and greased, per junction;
0.1
K/W
Md
Weight
Mounting torque(M6)
Terminal connection torque(M6)
Typical value
4 to 6
N·m
156
g
MIMMK130S160UA
Characteristic curves
Maximun allowable case tem (℃)
RTHJC(DC)=0.2 K/W
120
110
Conduction angle
100
90
30○
60○
80
70
0
90○
120○
Maximun allowable case tem (℃)
130
130
180○
200
150
180○
120○
90○
60○
30○
RMS limit
100
Conduction angle
50
0
0
Per junction
TJ=125℃
30
60
90
120
100
Conduction period
30○
90
60○
80
90○
70
120 ○
0
150
250
200
100
Conduction period
50
0
Per junction
TJ=125℃
0
Initial TJ=125℃
@60Hz 0.0083 s
@50Hz 0.01 s
2400
2200
2000
1800
1600
1400
Per junction
1200
100
1
10
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Figure 5. Maximum Non-Repetitive Surge Current
50
100
150
200
250
Average on-state current(A)
Figure 4. on-state power loss characteristics
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
At any rated load condition and with
rated VRRM applied following surge
2600
250
150 RMS limit
Figure 3. on-state power loss characteristics
2800
150
200
100
50
Average on-state current (A)
DC
180○
120○
90○
60○
30○
300
Average on-state current(A)
3000
180○
350
Maximun average on-state power loss (W)
Maximun average on-state power loss (W)
250
110
Figure 2. current rating characteristics
Figure 1. current rating characteristics
300
120
60
80 100 120 140
40 60
20
Average forward current(A)
RTHJC(DC)=0.2 K/W
3500
3000
2500
Maximum non repetitive surge
current versus pulse train duration.
control of conduction may not be
maintained.
Initial TJ= 125℃
no voltage reapplied
rated VRRM reapplied
2000
1500
Per junction
1000
0.01
0.1
Pulse Train Duration (s)
1
Figure 6. Maximum Non-Repetitive Surge Current
MIMMK130S160UA
450
400
350
300
250
Conduction angle
Maximum Total On-state Power Loss (W)
Maximum Total On-state Power Loss (W)
450
180○
120○
90○
60○
30○
200
150
100
Per module
TJ=125℃
50
0
0
100
200
Total RMS Output Current (A)
350
300
0.25K/W
250
0.4K/W
0.6K/W
1K/W
200
150
100
50
0
300
0
25
Figure 7. On-State Power Loss Characteristics-1
Figure.8
Transient Thermal Impedance ZthJC
1
1000
TJ=25℃
TJ=125℃
100
10
Per junction
0
0
4
1
2
3
Instantaneous On-state Voltage (V)
75
On-State Power Loss Characteristics-2
0.01
1
0.01
0.1
Square Wave Pulse Duration (s)
(1) PGM = 200 W, tp = 300s
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
1
(4)
VGD
(3)
(2)
(1)
Frequency Limited by PG(AV)
IGD
0.1
10
Figure.10 Thermal Impedance ZthJC Characteristics
a)Recommended load line
for rated di/dt:20V, 20Ω
tr =0.5s, tp≥6 s
b)Recommended load line
10 for ≤30% rated di/dt:15V,
(a)
40Ω
(b)
TJ=-40℃
TJ=25℃
TJ=125℃
0.01
125
0.1
100 Rectangular gate pulse
0.1
0.001
100
Steady State Value
(DC Operation)
0.001
0.001
5
Figure.9 On State Voltage Drop Characteristics
Instantaneous Gate Voltage (V)
50
Maximum Allowable Ambient Temperature (℃)
10000
Instantaneous On-state Current (A)
RTHSA=0.01K/W-Delta R
0.04K/W
0.08K/W
0.12K/W
0.16K/W
400
1
Instantaneous Gate Current (A)
Figure.11 Gate Characteristics
10
100
1000
MIMMK130S160UA
Package Outline (Dimensions in mm)
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