datasheet for VL470L2925F

datasheet for VL470L2925F
Product Specifications
PART NO:
REV: 1.0
VL470L2925F-B3S
General Information
1GB 128MX64 DDR SDRAM UNBUFFERED 200 PIN SODIMM
Description
The VL470L2925F is a 128Mx64 Double Data Rate SDRAM high density unbuffered SODIMM. This memory
module consists of sixteen CMOS 64Mx8 bit with 4 banks DDR Synchronous DRAMs in BGA packages and
a 2K EEPROM in an 8-pin TSSOP package. This module is a 200-pin dual in-line memory module and is
intended for mounting into a connector socket. Decoupling capacitors are mounted on the printed circuit board
for each DDR SDRAM.
Features
•
•
•
•
•
•
•
•
•
•
•
Power supply: VDD: 2.5V +/- 0.2V, VDDQ: 2.5V +/- 0.2V
Two data transfers per clock cycle
Bi-directional data strobe (DQS)
Differential clock inputs (CK and CK#)
DLL aligns DQ and DQS transition with CK transition
Programmable Read latency: DDR333(2.5 clock)
Programmable burst; length (2, 4, 8)
Programmable burst (sequential & interleave)
Auto & self refresh, (8K/64ms refresh)
Serial presence detect (SPD) with EEPROM
PCB: Height 26.67mm (1.050”), double sided components
Order Information
VL470L2925F-B3 S X
Pin N ame
Function
A0~A12
Address Inputs
B A 0, B A 1
Bank Select Address
D Q0~D Q63
D ata Inputs/Outputs
D QS0~D QS7
D ata Strobe Inputs/Outputs
C K 0, C K 0# ~
C K 1, C K 1#
C lock Inputs
C KE0~C KE1
C lock Enable Inputs
C S0#~C S1#
C hi p Select Inputs
RAS#
Row Address Strobes
C AS#
C olumn Addres Inputs
WE#
Wri te Enable
D M0~D M7
D ata Masks
VD D
Power Supply
VD D Q
Power Supply for D QS
VSS
Ground
VREF
Power Supply for Reference
VD D SPD
SPD Power Supply (2.3V-3.6V)
SD A
Seri al D ata Input/Output
SC L
SPD C lock Input
SA0~SA2
SPD Address
NC
No C onnect
DRAM DIE (Option)
DRAM MANUFACTURER
S - SAMSUNG
MODULE SPEED
B3: PC2700 @ CL2.5
VL : Lead-free/RoHS
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 1 OF 9
Product Specifications
PART NO:
REV: 1.0
VL470L2925F-B3S
Pin Configuration
200-PIN DDR SODIMM FRONT
200-PIN DDR SODIMM BACK
Pin
Name
Pin
Name
Pin
Name
Pin
Name
Pin
Name
Pin
Name
Pin
Name
Pin
Name
1
VREF
51
VSS
101
A9
151
DQ42
2
VREF
52
VSS
102
A8
152
DQ46
3
VSS
53
DQ19
103
VSS
153
DQ43
4
VSS
54
DQ23
104
VSS
154
DQ47
5
DQ0
55
DQ24
105
A7
155
VDD
6
DQ4
56
DQ28
106
A6
156
VDD
7
DQ1
57
VDD
107
A5
157
VDD
8
DQ5
58
VDD
108
A4
158
CK1#
9
VDD
59
DQ25
109
A3
159
VSS
10
VDD
60
DQ29
110
A2
160
CK1
11
DQS0
61
DQS3
111
A1
161
VSS
12
DM0
62
DM3
112
A0
162
VSS
13
DQ2
63
VSS
113
VDD
163
DQ48
14
DQ6
64
VSS
114
VDD
164
DQ52
15
VSS
65
DQ26
115
A10
165
DQ49
16
VSS
66
DQ30
116
BA1
166
DQ53
17
DQ3
67
DQ27
117
BA0
167
VDD
18
DQ7
68
DQ31
118
RAS#
168
VDD
19
DQ8
69
VDD
119
WE#
169
DQS6
20
DQ12
70
VDD
120
CAS#
170
DM6
21
VDD
71
CB0*
121
CS0#
171
DQ50
22
VDD
72
CB4*
122
CS1#
172
DQ54
23
DQ9
73
CB1*
123
NC
173
VSS
24
DQ13
74
CB5*
124
NC
174
VSS
25
DQS1
75
VSS
125
VSS
175
DQ51
26
DM1
76
VSS
126
VSS
176
DQ55
27
VSS
77
DQS8*
127
DQ32
177
DQ56
28
VSS
78
DM8*
128
DQ36
178
DQ60
29
DQ10
79
CB2*
129
DQ33
179
VDD
30
DQ14
80
CB6*
130
DQ37
180
VDD
31
DQ11
81
VDD
131
VDD
181
DQ57
32
DQ15
82
VDD
132
VDD
182
DQ61
33
VDD
83
CB3*
133
DQS4
183
DQS7
34
VDD
84
CB7*
134
DM4
184
DM7
35
CK0
85
NC
135
DQ34
185
VSS
36
VDD
86
NC
136
DQ38
186
VSS
37
CK0#
87
VSS
137
VSS
187
DQ58
38
VSS
88
VSS
138
VSS
188
DQ62
39
VSS
89
CK2*
139
DQ35
189
DQ59
40
VSS
90
VSS
140
DQ39
190
DQ63
41
DQ16
91
CK2#*
141
DQ40
191
VDD
42
DQ20
92
VDD
142
DQ44
192
VDD
43
DQ17
93
VDD
143
VDD
193
SDA
44
DQ21
94
VDD
144
VDD
194
SA0
45
VDD
95
CKE1
145
DQ41
195
SCL
46
VDD
96
CKE0
146
DQ45
196
SA1
47
DQS2
97
NC
147
DQS5
197
VDDSPD
48
DM2
98
NC
148
DM5
198
SA2
49
DQ18
99
A12
149
VSS
199
NC
50
DQ22
100
A11
150
VSS
200
NC
Note: *: These pins are not used in this modules.
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 2 OF 9
Product Specifications
PART NO:
REV: 1.0
VL470L2925F-B3S
Functional Block Diagram
CS1#
CS0#
DQS0
DM0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQS
DM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
DQS1
DM1
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQS
DM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
DQS2
DM2
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQS
DM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
DQS3
DM3
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQS
DM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
U0
U1
DQS
DM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
S0#
U2
DQS
DM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
S0#
U3
BA0 - BA1
SDRAMs U0 - U15
SDRAMs U0 - U15
CKE0
SDRAMs U0 - U7
CKE1
SDRAMs U8 - U15
RAS#
SDRAMs U0 - U15
CAS#
SDRAMs U0 - U15
WE#
SDRAMs U0 - U15
VDDSPD
DQS
DM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
S0#
A0 - A12
V DD /VDDQ
DQS
DM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
S0#
S0#
U8
S0#
U9
S0#
U10
S0#
U11
DQS4
DM4
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQS
DM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
DQS5
DM5
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQS
DM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
DQS6
DM6
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQS
DM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
DQS7
DM7
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DQS
DM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
DQS
DM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
S0#
U4
DQS
DM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
S0#
U5
DQS
DM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
S0#
U6
DQS
DM
I/0 0
I/0 1
I/0 2
I/0 3
I/0 4
I/0 5
I/0 6
I/0 7
S0#
U7
Clock Wiring
Clock
SDRAMs
Input
CK0/CK0#
CK1/CK1#
SPD
Serial PD
SCL
U0 - U15
VREF
U0 - U15
VS S
U0 - U15
8 SDRAMs
8 SDRAMs
SDA
WP
A0
A1
A2
SA0
SA1
SA2
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 3 OF 9
S0#
U12
S0#
U13
S0#
U14
S0#
U15
Product Specifications
PART NO:
REV: 1.0
VL470L2925F-B3S
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN, VOUT
-0.5 ~ 3.6
V
Voltage on VDD & VDDQ supply relative to VSS
VDD, VDDQ
-1.0 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
0
C
Operating temperature
TA
0 ~ 70
0
C
Power Dissipation
PD
16
W
Short circuit output current
IOS
50
mA
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposing to higher than recommended voltage for extended periods of time could affect device reliability.
D C Operating C onditions
TA = 00C to 700C
Parameter
Symbol
Mi n
Max
Uni t
Note
VDD
2.3
2.7
V
I/O Supply voltage D D R333 ( nomi nal VD D 2.5V)
VDDQ
2.3
2.7
V
I/O Reference voltage
VREF
0.49 * VD D Q
0.51 * VD D Q
V
1
I/O Termi nati on voltage
VTT
VREF-0.04
VREF+0.04
V
2
Input logi c hi gh voltage
VIH(D C )
VREF+0.15
VDDQ+0.30
V
Supply voltage D D R333 ( nomi nal VD D 2.5V)
Input logi c low voltage
VIL(D C )
-0.3
VREF-0.15
V
Input voltage level, C K and C K#
VIN(D C )
-0.3
VDDQ+0.30
V
Input di fferenti al voltage, C K and C K#
VID(D C )
0.3
VDDQ+0.60
V
Input crossi ng poi nt voltage, C K and C K#
VIX(D C )
0.3
VDDQ+0.60
V
-32
32
uA
Addr,
C AS#,RAS#,WE#
Input leakage current
C S #, C K E
-16
16
uA
C K, C K#
-16
16
uA
DM
-4
4
uA
II
Output leakage current
IOZ
-10
10
uA
Output hi gh current(normal strength)
VOUT = v + 0.84V
IOH
-16.8
-
mA
Output hi gh current(normal strength)
VOUT = VTT - 0.84V
IOL
16.8
-
mA
Output hi gh current(half strength)
VOUT = VTT + 0.45V
IOH
-9
-
mA
Output hi gh current(half strength)
VOUT = VTT - 0.45V
IOL
9
-
mA
Notes:
1. VREF i s expected to be equal to 0.5*VD D Q of the transmi tti ng devi ce, and to track vari ati ons i n the D C level of the same.
Peak to peak noi se on VREF may not exceed +/- 2% of the D C value.
2. VTT i s not appli ed di rectly to the devi ce. VTT i s a system supply for si gnal termi nati on resi stors, i s expected to be set equal to
VREF, and must track vari ati ons i n the D C level ofVREF.
3. VID i s the magni tude of the di fference between the i nput level on C K and the i nput level of C K#.
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 4 OF 9
3
Product Specifications
PART NO:
REV: 1.0
VL470L2925F-B3S
AC Operating Conditions
Parameter
Symbol
Min
Input High (Logic1) Voltage
VIH(AC)
VREF+0.31
Input Low (Logic0) Voltage
VIL(AC)
Input Differential Voltage, CK and CK# Inputs
VID(AC)
Input Crossing Point Voltage, CK and CK# Inputs
VIX(AC)
Max
Unit
Notes
V
1
VREF-0.31
V
1
0.7
VDDQ+0.6
V
0.5*VDDQ-0.2
0.5*VDDQ+0.2
V
Notes: 1. VIH overshoot: VIH = VDDQ + 1.5V for a pulse width <= 3ns and the pulse can not be greater than 1/3 of the cycle rate.
VIL undershoot: VIL = - 1.5V for a pulse width <= 3ns and the pulse can not be greater than 1/3 of the cycle rate.
Input/Output Capacitance
TA=250C, f=100MHz
Parameter
Symbol
Min
Max
Unit
Input capacitance (A0~A12, BA0~BA1, RAS#, CAS#, WE#)
CIN1
28
44
pF
Input capacitance (CKE0, CKE1)
CIN2
16
24
pF
Input capacitance (CS0#, CS1#)
CIN3
16
24
pF
Input capacitance (CK0, CK0#, CK1, CK1#)
CIN4
16
24
pF
Input/Output capacitance (DQ, DQS, DM)
CIO
11
13
pF
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 5 OF 9
Product Specifications
PART NO:
REV: 1.0
VL470L2925F-B3S
IDD Specification
Condition
Symbol
-B3
Unit
IDD0*
880
mA
IDD1*
1120
mA
PRECHARGE POWER-DOWN STANDBY CURRENT: All device banks are idle;
Power-down mode; tCK=tCK(MIN); CKE=LOW
IDD2P**
80
mA
IDLE STANDBY CURRENT: CS#=HIGH; All device banks are idle; tCK=tCK(MIN);
CKE=HIGH; Address and other control inputs changing once per clock cycle.
VIN=VREF for DQ,DQS and DM
IDD2F**
480
mA
ACITVE POWER-DOWN STANDBY CURRENT: One device bank active; Powerdown mode; tCK=tCK(MIN) ; CKE=LOW
IDD3P**
480
mA
ACTIVE STANDBY CURRENT: CS#=HIGH; CKE=HIGH; One device bank active;
tRC=tRAS(MAX); tCK=tCK(MIN); DQ,DM and DQS inputs change twice per clock cycle;
Address and other control inputs changing once per clock cycle
IDD3N**
720
mA
OPERATING CURRENT: Burst = 2; Reads; Continnuous burst; One device bank
active; Address and other control inputs changing once per clock cycle; tCK=tCK(MIN);
IOUT=0mA
IDD4R*
1160
mA
OPERATING CURRENT: Burst = 2; Writes; Continnuous burst; One device bank
active; Address and other control inputs changing once per clock cycle; tCK=tCK(MIN);
DQ,DM and DQS inputs change twice per clock cycle
IDD4W*
1240
mA
AUTO REFRESH CURRENT: TRC=TRFC(MIN)
IDD5**
3280
mA
SELF-REFRESH CURRENT: CKE< 0.2V
IDD6**
80
mA
OPERATING CURRENT: Four device bank interleaving Reads Burst=4 with auto
precharge; tRC=tRC(MIN) ; tCK=tCK(MIN); Address and control inputs change only during
Active READ, or WRITE commands
IDD7*
2920
mA
OPERATING CURRENT: One device bank active; Active-Precharge; tRC=tRC(MIN);
tCK=tCK(MIN); DQ,DM and DQS inputs change once per clock cycle;
Address and control inputs change once every two clock cycles
OPERATING CURRENT: One device bank; Active-Read-Precharge; BL=4;
tRC=tRC(MIN); tCK=tCK(MIN); IOUT=0mA; Address and control inputs change once per clock
cycle
Note:
IDD specification is based on Samsung F-die components.
*: Value calculated as one module rank in this operation condition, and other module rank in IDD2P (CKE LOW) mode.
**: Value calculated as all module ranks in this operation condition.
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 6 OF 9
Product Specifications
PART NO:
REV: 1.0
VL470L2925F-B3S
AC Timing Parameters & Specifications
-B 3
Parameter
Symbol
MIN
Row C ycle Ti me
MAX
U nit
tRC
60
Refresh row cycle ti me
tRFC
72
Row acti ve
tRAS
42
RAS# to C AS# delay
tRC D
18
tRP
18
ns
tRRD
12
ns
Row precharge ti me
Row acti ve to row acti ve delay
Wri te recovery ti me
Last data i n to READ command
C L=2.5
ns
70K
ns
ns
tWR
15
ns
tWTR
1
tC K
-
-
ns
tC K
6
12
ns
-
-
ns
C L=2
C lock cycle ti me
ns
C L=3
C lock hi gh level wi dth
tC H
0.45
0.55
tC K
C lock low level wi dth
tC L
0.45
0.55
tC K
tD QSC K
-0.6
+0.6
ns
Output data access ti me from C K/C K#
D QS-out access ti me from C K/C K#
tAC
-0.7
+0.7
ns
D ata strobe edge to output data edge
tD QSQ
-
0.4
ns
Read preamble
tRPRE
0.9
1.1
tC K
Read postamble
tRPST
0.4
0.6
tC K
C K to vali d D QS-i n
tD QSS
0.75
1.25
tC K
D QS-i n setup ti me
tWPRES
0
ns
tWPRE
0.25
tC K
tD SS
0.2
tC K
tC K
D QS-i n hold ti me
D QS falli ng edge to C K ri si ng-setup ti me
D QS falli ng edge to C K ri si ng-hold ti me
tD SH
0.2
D QS-i n hi gh level wi dth
tD QSH
0.35
tC K
D QS-i n low level wi dth
TD QSL
0.35
tC K
Address and control i nput setup ti me (fast)
tISF
0.75
ns
Address and control i nput hold ti me (fast)
tIHF
0.75
ns
Address and control i nput setup ti me (slow)
tISs
0.8
ns
Address and control i nput hold ti me (slow)
tIHs
0.8
D ata-out hi gh i mpedance ti me from C K/C K#
tHZ
-0.7
+0.7
ns
D ata-out low i mpedance ti me from C K/C K#
tLZ
-0.7
+0.7
ns
Mode regi gster set cycle
ns
tMRD
12
ns
tD S
0.45
ns
D Q & D M hold ti me to D QS
tD H
0.45
ns
C ontrol & address i nput pulse wi dth
tIPW
2.2
ns
D Q & D M setup ti me to D QS
D Q & D M i nput pulse wi dth
tD IPW
1.75
ns
Exi t self refresh to non-Read command
tXSNR
75
ns
Exi t self refresh to Read command
tXSRD
200
Refresh i nterval ti me
Output D QS vali d wi ndow
C lock half peri od
tREFI
tQH
tHP
-tQHS
tHP
tC Lmi n
or tC Hmi n
D ata hold skew factor
tQHS
D QS wri te postamble
tWPST
0.4
Acti ve Read wi th auto precharge command
tRAP
18
Auto precharge Wri te recovery + Precharge ti me
tD AL
tWR/tC K
+
tRP/tC K
tC K
7.8
us
-
ns
-
ns
0.5
ns
0.6
tC K
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 7 OF 9
tC K
Product Specifications
PART NO:
REV: 1.0
VL470L2925F-B3S
Package Dimensions
FRONT VIEW
3.56
MAX
67.60
4.00 +/- 0.10 (2X)
1.80 (2X)
TYP
26.67
20.00 TYP
6.00 TYP
2.55 TYP
1.00 +/- 0.10
2.15 TYP
1.00 TYP
PIN 1
0.45 TYP
0.60 TYP
PIN 199
63.60 TYP
BACK VIEW
4.00 +/- 0.10
4.20 TYP
PIN 200
PIN 2
47.40 TYP
11.40 TYP
15.35 TYP
NOTE:
All dimension are in millimeters with tolerance +/- 0.15mm unless otherwise specified.
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 8 OF 9
Product Specifications
PART NO:
VL470L2925F-B3S
Revision History:
Date
Rev.
P ag e
04/02/09
1.0
All
C h an g es
Spec release
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 9 OF 9
REV: 1.0
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