RJF0611DPD Datasheet

RJF0611DPD Datasheet
Target Specifications Datasheet
RJF0611DPD
R07DS0716EJ0100
Rev.1.00
Apr 17, 2012
Silicon N Channel MOS FET Series
Power Switching
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features







Logic level operation (4 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Power supply voltage applies 12 V and 24 V.
For Industrial applications
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
D
4
G
1
2
3
Gate Resistor
Temperature
Sensing
Circuit
Latch
Circuit
1. Gate
2. Drain
3. Source
4. Drain
Current
Limitation
Circuit
Gate
Shut-down
Circuit
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Gate to source voltage
VGSS
Drain current
ID Note3
Body-drain diode reverse drain current
IDR
Note 2
Avalanche current
IAP
Avalanche energy
EAR Note 2
Channel dissipation
Pch Note 1
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25C
2. Tch = 25C, Rg  50 
3. It provides by the current limitation lower bound value.
R07DS0716EJ0100 Rev.1.00
Apr 17, 2012
Ratings
60
16
–2.5
30
30
6.7
192
40
150
–55 to +150
Unit
V
V
V
A
A
A
mJ
W
C
C
Page 1 of 7
RJF0611DPD
Target Specifications
Typical Operation Characteristics
(Ta = 25°C)
Item
Input voltage
Input current
(Gate non shut down)
Symbol
VIH
VIL
IIH1
IIH2
IIL
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Note:
IIH(sd)1
IIH(sd)2
Tsd
Vop
ID limt
Min
3.5
—
—
—
—
—
—
—
3.5
30
Typ
—
—
—
—
—
0.8
0.35
175
—
—
Max
—
1.2
100
50
1
—
—
—
12
—
Unit
V
V
A
A
A
mA
mA
C
V
A
Test Conditions
Vi = 8 V, VDS = 0
Vi = 3.5 V, VDS = 0
Vi = 1.2 V, VDS = 0
Vi = 8 V, VDS = 0
Vi = 3.5 V, VDS = 0
Channel temperature
VGS = 5 V, VDS = 10 V Note 4
4. Pulse test
Electrical Characteristics
(Ta = 25°C)
Item
Drain current
Symbol
Min
Typ
Max
Unit
ID1
ID2
ID3
—
—
30
60
—
—
—
—
45
10
—
—
A
mA
A
V
VGS = 3.5 V, VDS = 10 V Note 5
VGS = 1.2 V, VDS = 10 V
VGS = 5 V, VDS = 10 V Note 5
ID = 10 mA, VGS = 0
16
–2.5
—
—
—
—
—
—
—
1.1
12
—
—
—
—
—
—
—
—
—
0.8
0.35
—
—
27
30
21
520
—
—
100
50
1
–100
—
—
10
2.1
—
40
30
—
V
V
A
A
A
A
mA
mA
A
V
S
m
m
pF
IG = 800 A, VDS = 0
IG = –100 A, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VGS = 1.2 V, VDS = 0
VGS = –2.4 V, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VDS = 32 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 15 A, VDS = 10 V Note 5
ID = 15 A, VGS = 4 V Note 5
ID = 15 A, VGS = 10 V Note 5
VDS = 10 V, VGS = 0, f = 1MHz
3.5
12.7
4
7.2
0.9
—
—
—
—
—
s
s
s
s
V
VGS = 10 V, ID= 15 A, RL = 2 
IF = 30 A, VGS = 0
diF/dt = 50 A/s
VGS = 5 V, VDD = 16 V
VGS = 5 V, VDD = 24 V
Drain to source breakdown
voltage
V(BR)DSS
Gate to source breakdown
voltage
V(BR)GSS
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
V(BR)GSS
IGSS1
IGSS2
IGSS3
IGSS4
IGS(OP)1
IGS(OP)2
IDSS
VGS(off)
|yfs|
RDS(on)
Output capacitance
RDS(on)
Coss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
Body-drain diode forward
voltage
VDF
—
—
—
—
—
Body-drain diode reverse
recovery time
trr
—
102
—
ns
tos1
—
—
0.34
0.23
—
—
ms
ms
Over load shut down
Note 6
operation time
tos2
Test Conditions
IF = 30 A, VGS = 0
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
R07DS0716EJ0100 Rev.1.00
Apr 17, 2012
Page 2 of 7
RJF0611DPD
Target Specifications
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
ID (A)
Thermal shut down
Operation area
40
10
30
Drain Current
Channel Dissipation
Pch (W)
50
20
10
0
0
50
100
150
Case Temperature
1
PW = 10 ms
Operation in
this area is
limited by RDS (on)
0.1
0.01
200
100
4V
20
VGS = 3 V
10
ID (A)
VDS = 10 V
Pulse Test
9V
8V
7V
Drain Current
ID (A)
10
30
30
Drain Current
1
Typical Transfer Characteristics
10 V
40
0.1
Drain to Source Voltage VDS (V)
Tc (°C)
Typical Output Characteristics
50
1 ms
DC Operation
(Tc = 25°C)
20
Tc = –40°C
25°C
10
Pulse Test
0
0
0
2
4
6
Drain to Source Voltage
8
10
0
700
600
500
400
ID = 15 A
300
10 A
200
5A
100
0
0
2
4
6
8
Gate to Source Voltage VGS (V)
R07DS0716EJ0100 Rev.1.00
Apr 17, 2012
10
3
4
5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (mΩ)
Drain to Source Saturation Voltage
VDS (on) (mV)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
2
Gate to Source Voltage
VDS (V)
800
1
1000
Pulse Test
100
VGS = 4 V
10 V
10
1
0.1
1
Drain Current
10
100
ID (A)
Page 3 of 7
Target Specifications
Static Drain to Source on State Resistance
vs. Temperature
55
Pulse Test
ID = 15 A
50
10 A
45
5A
40
10 A
35
5A
30 VGS = 4 V
ID = 15 A
25
20
15
10 V
10
–50 –25 0
25
50
75 100 125 150
Case Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (mΩ)
RJF0611DPD
100
25°C
10
150°C
1
0.1
0.1
10
100
Drain Current ID (A)
Switching Characteristics
100
1000
VGS = 10 V, VDD = 30 V
PW = 300 μs, duty ≤ 1 %
100
10
di / dt = 50 A / μs
VGS = 0, Ta = 25°C
1
0.1
1
10
Reverse Drain Current
Switching Time t (μs)
Reverse Recovery Time trr (ns)
1
Tc (°C)
Body-Drain Diode Reverse
Recovery Time
tr
10
tf
td(off)
td(on)
1
0.1
100
1
10
Drain Current
IDR (A)
100
ID (A)
Typical Capacitance vs.
Drain to Source Voltage
Reverse Drain Current vs.
Source to Drain Voltage
10000
30
Pulse Test
25
3000
Capacitance C (pF)
Reverse Drain Current IDR (A)
Tc = –40°C
VDS = 10 V
Pulse Test
20
15
VGS = 5 V
10
0V
5
1000
Coss
300
100
30
0
VGS = 0
f = 1 MHz
10
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage VSD (V)
R07DS0716EJ0100 Rev.1.00
Apr 17, 2012
0
10
20
30
40
50
60
Drain to Source Voltage VDS (V)
Page 4 of 7
RJF0611DPD
Target Specifications
Shutdown Case Temperature vs.
Gate to Source Voltage
Shutdown Case Temperature Tc (°C)
Gate to Source Voltage
VGS (V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
16
14
12
10
8
6
VDD = 16 V
24 V
4
2
0
10
100
1000
Normalized Transient Thermal Impedance γ s (t)
Shutdown Time of Load-Short Test
10000
200
180
160
140
120
ID = 0.5 A
100
0
Pw (μS)
2
4
6
8
Gate to Source Voltage
10
VGS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.03
θch - c(t) = γs (t) • θch - c
θch - c = 3.125°C/W, Tc = 25°C
0.05
0.02
1
0.0
PDM
e
T
1
0.01
10 μ
PW
T
PW
uls
tp
o
sh
D=
100 μ
1m
10 m
100 m
1
10
Pulse Width PW (S)
R07DS0716EJ0100 Rev.1.00
Apr 17, 2012
Page 5 of 7
RJF0611DPD
Target Specifications
Switching Time Test Circuit
Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Vin
10%
RL
Vout
Vin
10 V
50 Ω
10%
VDD
= 30 V
90%
td(on)
Avalanche Test Circuit
VDS
Monitor
10%
tr
90%
td(off)
tf
Avalanche Waveform
L
EAR =
1
2
L • IAP2 •
V(BR)DSS
V(BR)DSS – VDD
IAP
Monitor
V(BR)DSS
Rg
Vin
10 V
D. U. T
IAP
VDD
ID
50 Ω
0
R07DS0716EJ0100 Rev.1.00
Apr 17, 2012
VDS
VDD
Page 6 of 7
RJF0611DPD
Target Specifications
Package Dimensions
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Previous Code
DPAK(S) / DPAK(S)V
MASS[Typ.]
0.28g
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
(5.1)
(5.1)
6.5 ± 0.3
5.6 ± 0.5
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
Package Name
DPAK(S)
0 – 0.25
2.5 ± 0.5
(1.2)
1.0 Max.
2.29 ± 0.5
0.8 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
Ordering Information
Orderable Part Number
RJF0611DPD-00-J3
Note:
Quantity
3000 pcs
Shipping Container
Taping
The symbol of 2nd "-" is occasionally presented as "#".
R07DS0716EJ0100 Rev.1.00
Apr 17, 2012
Page 7 of 7
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