buk138-50dl


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Philips Semiconductors

Logic level TOPFET

D-PAK version of BUK117-50DL

Product specification

BUK138-50DL

DESCRIPTION

Monolithic temperature and overload protected logic level power

MOSFET in TOPFET2 technology assembled in a 3 pin surface mount plastic package.

APPLICATIONS

General purpose switch for driving lamps motors solenoids heaters in automotive systems and other applications.

FEATURES

TrenchMOS output stage

Current limiting

Overload protection

Overtemperature protection

Protection latched reset by input

5 V logic compatible input level

Control of output stage and supply of overload protection circuits derived from input

Low operating input current permits direct drive by micro-controller

ESD protection on all pins

Overvoltage clamping for turn off of inductive loads

QUICK REFERENCE DATA

SYMBOL PARAMETER

V

DS

I

D

P

D

T j

R

DS(ON)

I

ISL

Continuous drain source voltage

Continuous drain current

Total power dissipation

Continuous junction temperature

Drain-source on-state resistance

Input supply current V

IS

= 5 V

FUNCTIONAL BLOCK DIAGRAM

INPUT

LOGIC AND

PROTECTION

RIG

O / V

CLAMP

MAX.

UNIT

50

8

40

150

100

650

V

A

W

˚C m

µ

A

DRAIN

POWER

MOSFET

PINNING - SOT428

PIN DESCRIPTION

1 input

2 drain

3 source tab drain

Fig.1. Elements of the TOPFET.

PIN CONFIGURATION

tab

SYMBOL

TOPFET

D

I

P

1

2

3

S

SOURCE

May 2001 1 Rev 1.300

Philips Semiconductors

Logic level TOPFET

D-PAK version of BUK117-50DL

Product specification

BUK138-50DL

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

I

SYMBOL PARAMETER

V

D

DS

Continuous drain source voltage 1

Continuous drain current

CONDITIONS

-

V

IS

= 5 V; T mb

= 25 ˚C

I

D

I

I

I

IRM

P

D

T stg

T j

T sold

Continuous drain current

Continuous input current

Non-repetitive peak input current

Total power dissipation

Storage temperature

Continuous junction temperature 2

Case temperature

V

IS

= 5 V; T mb

≤ 110 ˚C

t p

T mb

≤ 1 ms

≤ 25 ˚C

normal operation during soldering

MIN.

-

-

-

-5

-10

-

-55

-

-

MAX.

50 self limited

8

5

10

40

175

150

260

ESD LIMITING VALUE

SYMBOL PARAMETER

V

C

Electrostatic discharge capacitor voltage

CONDITIONS

Human body model;

C = 250 pF; R = 1.5 k Ω

OVERVOLTAGE CLAMPING LIMITING VALUES

At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.

SYMBOL PARAMETER MIN.

MAX.

UNIT

E

DSM

E

DRM

Inductive load turn-off

Non-repetitive clamping energy

Repetitive clamping energy

CONDITIONS

I

DM

= 8 A; V

DD

≤ 20 V

T mb

T mb

≤ 25 ˚C

≤ 95 ˚C; f = 250 Hz -

100

20 mJ mJ

OVERLOAD PROTECTION LIMITING VALUE

With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload

- overtemperature and short circuit load.

SYMBOL PARAMETER

V

DS

Drain source voltage

3

REQUIRED CONDITION

4 V

V

IS

5.5 V

MIN.

0

MAX.

35

UNIT

V

THERMAL CHARACTERISTIC

SYMBOL PARAMETER

R th j-mb

R th j-a

Thermal resistance

Junction to mounting base

Junction to ambient

CONDITIONS

minimum footprint FR4 PCB

MIN.

TYP.

MAX.

UNIT

-

-

MIN.

-

2.5

71.4

MAX.

2

UNIT kV

3.1

K/W

K/W

UNIT

V

A

A mA mA

W

˚C

˚C

˚C

1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.

2 A higher T j

is allowed as an overload condition but at the threshold T j(TO)

the over temperature trip operates to protect the switch.

3 All control logic and protection functions are disabled during conduction of the source drain diode.

May 2001 2 Rev 1.300

Philips Semiconductors

Logic level TOPFET

D-PAK version of BUK117-50DL

Product specification

BUK138-50DL

OUTPUT CHARACTERISTICS

Limits are for -40˚C ≤ T mb

≤ 150˚C; typicals are for T mb

= 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN.

TYP.

MAX.

UNIT

V

(CL)DSS

I

DSS

R

DS(ON)

Off-state V

IS

= 0 V

Drain-source clamping voltage I

D

= 10 mA

I

DM

= 1 A; t p

≤ 300 µ s; δ ≤ 0.01

Drain source leakage current V

DS

= 40 V

On-state

Drain-source resistance

T mb

= 25 ˚C

I

DM

= 3 A; t p

≤ 300 µ s; δ ≤ 0.01

V

IS

4.4 V

T mb

= 25 ˚C

V

IS

4 V

T mb

= 25 ˚C -

-

-

-

50

50

-

-

-

60

-

0.1

-

68

-

72

-

70

100

10

190 m

100 m

200 m

105 m

V

V

µ

A

µ

A

OVERLOAD CHARACTERISTICS

-40˚C ≤ T mb

≤ 150˚C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS

I

D

P

D(TO)

T

DSC

Short circuit load

Drain current limiting

Overload protection

Overload power threshold

Characteristic time

V

DS

= 13 V

V

IS

= 5 V;

4.4 V

V

IS

5.5 V

4 V ≤ V

IS

≤ 5.5 V

T mb

= 25˚C

V

IS

= 5 V; device trips if P

D

> P

D(TO)

T mb which determines trip time

1

= 25˚C

T j(TO)

Overtemperature protection

Threshold junction temperature 2

MIN.

TYP.

MAX.

UNIT

8

6

5

12

-

-

150 170

16

18

18

20 55 80

200 350 600

-

A

A

A

W

µ s

˚C

1 Trip time t d sc

varies with overload dissipation P

D

according to the formula t d sc

≈ T

DSC

/ ln[ P

D

/ P

D(TO)

].

2 This is independent of the dV/dt of input voltage V

IS

.

May 2001 3 Rev 1.300

Philips Semiconductors

Logic level TOPFET

D-PAK version of BUK117-50DL

Product specification

BUK138-50DL

INPUT CHARACTERISTICS

The supply for the logic and overload protection is taken from the input.

Limits are for -40˚C ≤ T mb

≤ 150˚C; typicals are for T mb

= 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN.

TYP.

MAX.

UNIT

V

IS(TO)

I

IS

I

ISL

V

ISR t lr

V

(CL)IS

R

IG

Input threshold voltage

Input supply current

Input supply current

Protection reset voltage

1

Latch reset time

Input clamping voltage

Input series resistance 2 to gate of power MOSFET

V

DS

= 5 V; I

D

= 1 mA normal operation; protection latched; reset time t r

100

µ s

V

IS1

= 5 V, V

IS2

< 1 V

I

I

= 1.5 mA

0.6

T mb

= 25˚C 1.1

V

V

IS

IS

= 5 V

= 4 V

V

IS

= 5 V

V

IS

= 3 V

100 220 400

80 195 330

200

130

-

1.6

400

250

2.4

2.1

650

430

1.5

10

2

40

2.9

100

T mb

= 25˚C

5.5

-

-

33

8.5

-

V

µ s

V k

V

V

µ A

µ A

µ A

µ A

SWITCHING CHARACTERISTICS

T mb

= 25 ˚C; V

DD

= 13 V; resistive load R

L

= 4 Ω . Refer to waveform figure and test circuit.

SYMBOL PARAMETER CONDITIONS t d on t r t d off t f

Turn-on delay time

Rise time

Turn-off delay time

Fall time

V

IS

= 5 V

V

IS

= 0 V

MIN.

TYP.

MAX.

UNIT

-

-

-

10

20

30

20

20

40

60

40

µ s

µ s

µ s

µ s

1 The input voltage below which the overload protection circuits will be reset.

2 Not directly measureable from device terminals.

May 2001 4 Rev 1.300

Philips Semiconductors

Logic level TOPFET

D-PAK version of BUK117-50DL

MECHANICAL DATA

Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads

(one lead cropped)

Product specification

BUK138-50DL

SOT428

E b2

A seating plane y

A2

A

A1 mounting base

L2

D

HE

1 b1 e e1

2

L b

3 w M A

L1 c

E1

D1

0 10 scale

20 mm

DIMENSIONS (mm are the original dimensions)

UNIT

A max.

A1 (1) A2 b b1 max.

b2 c mm

2.38

2.22

0.65

0.45

0.89

0.71

0.89

0.71

1.1

0.9

5.36

5.26

0.4

0.2

Note

1. Measured from heatsink back to lead.

OUTLINE

VERSION

IEC

D max.

6.22

5.98

D1 max.

4.81

4.45

E max.

6.73

6.47

REFERENCES

JEDEC EIAJ

E1 min.

4.0

e e1

2.285

4.57

HE max.

10.4

9.6

L

2.95

2.55

L1 min.

0.5

0.7

0.5

EUROPEAN

L2

PROJECTION

SOT428 w

0.2

y max.

0.2

ISSUE DATE

98-04-07

Fig.2. SOT428 surface mounting package

1

, centre pin connected to mounting base.

1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.1 g

For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18.

May 2001 5 Rev 1.300

Philips Semiconductors

Logic level TOPFET

D-PAK version of BUK117-50DL

Product specification

BUK138-50DL

DEFINITIONS

DATA SHEET STATUS

DATA SHEET

STATUS 1

Objective data

PRODUCT

STATUS 2

Development

DEFINITIONS

This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice

Preliminary data

Product data

Qualification

Production

This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the specification without notice, in ordere to improve the design and supply the best possible product

This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process

Change Notification (CPCN) procedure SNW-SQ-650A

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 2001

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

1 Please consult the most recently issued datasheet before initiating or completing a design.

2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

May 2001 6 Rev 1.300

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