BUZ91

BUZ91
BUZ 91 A
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
Pin 2
G
Pin 3
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 91 A
600 V
8A
0.9 Ω
TO-220 AB
C67078-S1342-A3
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 33 °C
Values
Unit
A
8
IDpuls
Pulsed drain current
TC = 25 °C
32
Avalanche current,limited by Tjmax
IAR
8
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
EAR
13
mJ
EAS
ID = 8 A, VDD = 50 V, RGS = 25 Ω
L = 16.3 mH, Tj = 25 °C
570
Gate source voltage
VGS
Power dissipation
Ptot
TC = 25 °C
± 20
V
W
150
Operating temperature
Tj
-55 ... + 150
Storage temperature
Tstg
-55 ... + 150
Thermal resistance, chip case
RthJC
≤ 0.83
Thermal resistance, chip to ambient
RthJA
75
DIN humidity category, DIN 40 040
K/W
E
IEC climatic category, DIN IEC 68-1
Semiconductor Group
°C
55 / 150 / 56
1
07/96
BUZ 91 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Drain- source breakdown voltage
V(BR)DSS
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
600
-
-
VGS(th)
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
V
2.1
3
4
IDSS
µA
VDS = 600 V, VGS = 0 V, Tj = 25 °C
-
0.1
1
VDS = 600 V, VGS = 0 V, Tj = 125 °C
-
10
100
Gate-source leakage current
IGSS
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
-
10
100
Ω
RDS(on)
VGS = 10 V, ID = 5 A
Semiconductor Group
nA
-
2
0.8
0.9
07/96
BUZ 91 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Dynamic Characteristics
Transconductance
gfs
VDS≥ 2 * ID * RDS(on)max, ID = 5 A
Input capacitance
5
pF
-
1400
2100
-
180
270
-
65
100
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
-
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
8.5
Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
S
td(on)
ns
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω
Rise time
-
20
30
-
70
110
-
250
330
-
80
100
tr
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω
Turn-off delay time
td(off)
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω
Fall time
tf
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω
Semiconductor Group
3
07/96
BUZ 91 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Reverse Diode
Inverse diode continuous forward current IS
TC = 25 °C
Inverse diode direct current,pulsed
-
-
32
V
1.1
1.2
trr
ns
-
480
-
Qrr
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Semiconductor Group
8
-
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Reverse recovery charge
-
VSD
VGS = 0 V, IF = 16 A
Reverse recovery time
-
ISM
TC = 25 °C
Inverse diode forward voltage
A
µC
-
4
6.5
-
07/96
BUZ 91 A
Drain current
ID = ƒ(TC)
parameter: VGS ≥ 10 V
Power dissipation
Ptot = ƒ(TC)
9
160
A
W
Ptot
ID
7
120
6
100
5
80
4
60
3
40
2
20
1
0
0
0
20
40
60
80
100
120
°C
0
160
20
40
60
80
100
120
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
°C
160
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 2
10 0
t = 3.8µs
p
A
K/W
10 µs
ID
ZthJC
100 µs
10 -1
/I
D
10 1
DS
(on
)
=V
DS
1 ms
D = 0.50
R
10 ms
10
0.20
0
10
-2
0.10
0.05
0.02
single pulse
0.01
DC
10 -1
0
10
10
1
10
2
V 10
10 -3
-7
10
3
VDS
Semiconductor Group
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
tp
5
07/96
0
BUZ 91 A
Typ. output characteristics
ID = ƒ(VDS)
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
parameter: tp = 80 µs
18
2.8
l
Ptot = 150W
k
j i hg f e
Ω
A
d
14
12
c
10
8
6
a
4.0
c
b
4.5
c
5.0
d
5.5
e
6.0
f
6.5
g
7.0
h
7.5
i
8.0
RDS (on) 2.2
2.0
1.8
1.6
1.4
d
1.2
j
9.0
1.0
b k
10.0
0.8
l
20.0
4
e
f
g
h
i
j
k
0.6
2
0
0
b
2.4
VGS [V]
ID
a
0.4 VGS [V] =
a
a
4.0
4.5
0.2
0.0
5
10
15
20
25
30
35
40
V
50
0
b
5.0
2
c
5.5
4
d
6.0
6
e
f
6.5 7.0
8
g
7.5
10
h
i
j
k
8.0 9.0 10.0 20.0
12
14
VDS
A
Typ. transfer characteristics ID = f (VGS)
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
ID
18
ID
10
12
A
S
10
8
gfs
9
7
8
6
7
5
6
4
5
4
3
3
2
2
1
0
0
1
0
1
2
3
4
5
6
7
8
V
10
VGS
Semiconductor Group
6
0
1
2
3
4
5
6
7
A
ID
07/96
9
BUZ 91 A
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 1 mA
Drain-source on-resistance
RDS (on) = ƒ(Tj )
parameter: ID = 5 A, VGS = 10 V
4.0
4.6
V
Ω
98%
4.0
VGS(th)
RDS (on) 3.2
3.6
2.8
3.2
2.4
2.8
typ
2.4
2.0
2%
2.0
1.6
98%
typ
1.2
1.6
1.2
0.8
0.8
0.4
0.4
0.0
-60
0.0
-60
-20
20
60
100
°C
160
-20
20
60
100
°C
Tj
Typ. capacitances
160
Tj
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj , tp = 80 µs
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 1
10 2
nF
A
IF
C
Ciss
10 0
10 1
Coss
10
-1
10 0
Tj = 25 °C typ
Crss
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -2
0
5
10
Semiconductor Group
15
20
25
30
V
VDS
40
10 -1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
VSD
7
07/96
3.0
BUZ 91 A
Avalanche energy EAS = ƒ(Tj )
parameter: ID = 8 A, VDD = 50 V
RGS = 25 Ω, L = 16.3 mH
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 12 A
600
16
mJ
V
500
EAS
VGS
450
12
400
10
350
0,2 VDS max
300
0,8 VDS max
8
250
6
200
150
4
100
2
50
0
20
0
40
60
80
100
120
°C
160
Tj
0
20
40
60
80
100
130
Q Gate
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj )
710
V
680
V(BR)DSS
660
640
620
600
580
560
540
-60
-20
20
60
100
°C
160
Tj
Semiconductor Group
8
07/96
BUZ 91 A
Package Outlines
TO-220 AB
Dimension in mm
Semiconductor Group
9
07/96
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