RJL5014DPK Datasheet

RJL5014DPK Datasheet
Preliminary Datasheet
RJL5014DPK
R07DS0436EJ0200
(Previous: REJ03G1798-0100)
Rev.2.00
Jun 14, 2011
Silicon N Channel MOS FET
High Speed Power Switching
Features
 Built-in fast recovery diode
 Low on-resistance
RDS(on) = 0.32  typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C)
 Low leakage current
 High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
1. Gate
2. Drain (Flange)
3. Source
G
1
2
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IDR (pulse)Note1
IAPNote3
Note3
EAR
Pch Note2
ch-c
Tch
Tstg
Ratings
500
30
19
57
19
57
4
Unit
V
V
A
A
A
A
A
0.88
150
0.833
150
–55 to +150
mJ
W
C/W
C
C
Notes: 1. PW  10 s, duty cycle  1 %
2. Value at Tc = 25C
3. STch = 25C, Tch  150C
R07DS0436EJ0200 Rev.2.00
Jun 14, 2011
Page 1 of 6
RJL5014DPK
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
RDS(on)
Min
500
—
—
2.0
—
Typ
—
—
—
—
0.32
Max
—
10
±0.1
4.0
0.40
Unit
V
A
A
V

Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
—
—
—
—
—
—
—
—
—
—
—
1700
190
23
32
27
95
20
43
8.2
21.8
1.00
—
—
—
—
—
—
—
—
—
—
1.65
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
trr
—
160
—
ns
Test conditions
ID = 10 mA, VGS = 0
VDS = 500 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 9.5 A, VGS = 10 V Note4
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 9.5 A
VGS = 10 V
RL = 26.3 
Rg = 10 
VDD = 400 V
VGS = 10 V
ID = 19 A
IF = 19 A, VGS = 0 Note4
IF = 19 A, VGS = 0
diF/dt = 100 A/s
Notes: 4. Pulse test
R07DS0436EJ0200 Rev.2.00
Jun 14, 2011
Page 2 of 6
RJL5014DPK
Preliminary
Main Characteristics
Typical Output Characteristics
Maximum Safe Operation Area
10
20
Drain Current ID (A)
=1
10
00
μs
1
Operation in this
area is limited by
RDS(on)
0.1
0.01
1
10
100
10 V
16
5.4 V
Ta = 25°C
Pulse Test
5.2 V
12
5.0 V
8
4.8 V
4
4.6 V
VGS = 4.4 V
0
1000
4
8
12
16
20
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
RDS(on) (Ω)
100
VDS = 10 V
Pulse Test
10
Tc = 75°C
25°C
1
−25°C
0.1
0
2
4
6
8
10
VGS = 10 V
Ta = 25°C
Pulse Test
1
0.1
10
1
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
Body-Drain Diode Reverse
Recovery Time (Typical)
100
1000
1.0
VGS = 10 V
Pulse Test
0.8
ID = 19 A
0.6
9.5 A
0.4
3A
0.2
0
-25
Reverse Recovery Time trr (ns)
Drain Current ID (A)
5.6 V
5.8 V
Tc = 25°C
1 shot
0.001
0.1
Static Drain to Source on State Resistance
RDS(on) (Ω)
6V
8V
μs
PW
Drain Current ID (A)
100
100
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
10
0
25
50
75
100 125 150
Case Temperature Tc (°C)
R07DS0436EJ0200 Rev.2.00
Jun 14, 2011
1
10
100
Reverse Drain Current IDR (A)
Page 3 of 6
RJL5014DPK
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
1000
Coss
100
Crss
10
1
0
VGS = 0
f = 1 MHz Ta = 25°C
50
100
150
200
250
Reverse Drain Current IDR (A)
VDS
200
4
VDD = 400 V
250 V
100 V
0
20
40
60
80
Gate Charge Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
VGS = 0
Ta = 25°C
Pulse Test
16
12
8
4
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
R07DS0436EJ0200 Rev.2.00
Jun 14, 2011
12
8
Drain to Source Voltage VDS (V)
20
0
VDD = 100 V
250 V
400 V
600
400
16
VGS
ID = 19 A
Ta = 25°C
0
Gate to Source Cutoff Voltage VGS(off) (V)
Capacitance C (pF)
Ciss
800
5
Gate to Source Voltage VGS (V)
10000
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics (Typical)
100
VDS = 10 V
4
ID = 10 mA
1 mA
3
0.1 mA
2
1
0
-25
0
25
50
75
Case Temperature
100 125 150
Tc (°C)
Page 4 of 6
RJL5014DPK
Preliminary
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 0.833°C/W, Tc = 25°C
0.1
0.05
0.03
PDM
0.02
1
0.0
0.01
10 μ
t
ho
ls
pu
D=
e
PW
T
PW
T
1s
100 μ
1m
10 m
Pulse Width
100 m
1
10
PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
10 Ω
Vin
10 V
VDD
= 250 V
Vin
Vout
10%
10%
10%
90%
td(on)
R07DS0436EJ0200 Rev.2.00
Jun 14, 2011
tr
90%
td(off)
tf
Page 5 of 6
RJL5014DPK
Preliminary
Package Dimensions
JEITA Package Code
SC-65
Previous Code
TO-3P / TO-3PV
RENESAS Code
PRSS0004ZE-A
15.6 ± 0.3
MASS[Typ.]
5.0g
Unit: mm
4.8 ± 0.2
1.5
2.0
0.3
19.9 ± 0.2
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
Package Name
TO-3P
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Orderable Part Number
RJL5014DPK-00-T0
R07DS0436EJ0200 Rev.2.00
Jun 14, 2011
Quantity
360 pcs
Shipping Container
Box (Tube)
Page 6 of 6
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