BLL8H1214LS-500U datasheet

BLL8H1214LS-500U datasheet
BLL8H1214L-500;
BLL8H1214LS-500
LDMOS L-band radar power transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1.
Test information
Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 150 mA; in a class-AB
production test circuit.
Test signal
pulsed RF
f
VDS
PL
Gp
D
tr
tf
(GHz)
(V)
(W)
(dB)
(%)
(ns)
(ns)
1.2 to 1.4
50
500
17
50
20
6
1.2 Features and benefits









Easy power control
Integrated dual side ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
 L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BLL8H1214L-500 (SOT539A)
1
drain1
2
drain2
3
gate1
4
gate2
5
1
1
2
5
3
3
4
5
4
[1]
source
2
sym117
BLL8H1214LS-500 (SOT539B)
1
drain1
2
drain2
3
gate1
4
gate2
5
1
1
2
5
3
3
4
5
4
[1]
source
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLL8H1214L-500
-
flanged balanced ceramic package; 2 mounting holes;
4 leads
SOT539A
BLL8H1214LS-500
-
earless flanged balanced ceramic package; 4 leads
SOT539B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
100
V
VGS
gate-source voltage
6
+13
V
Tstg
storage temperature
65
+150
C
-
225
C
Tj
[1]
junction temperature
[1]
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
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BLL8H1214L(S)-500
LDMOS L-band radar power transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Zth(j-c)
transient thermal impedance from
junction to case
Tcase = 85 C; PL = 500 W
Unit
tp = 100 s;  = 10 %
0.046 K/W
tp = 200 s;  = 10 %
0.059 K/W
tp = 300 s;  = 10 %
0.069 K/W
tp = 100 s;  = 20 %
0.064 K/W
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
100
-
-
V
VDS = 10 V; ID = 270 mA
1.3
1.8
2.2
V
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.7 mA
VGS(th)
gate-source threshold voltage
IDSS
drain leakage current
VGS = 0 V; VDS = 50 V
-
-
1.4
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
32
42
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
140
nA
gfs
forward transconductance
VDS = 10 V; ID = 270 mA
1.7
3
-
S
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 9.5 A
-
100
164
m
Table 7.
RF characteristics
Test signal: pulsed RF; tp = 300 s;  = 10 %; RF performance at VDS = 50 V; IDq = 150 mA;
Tcase = 25 C; unless otherwise specified, in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS
drain-source voltage
PL = 500 W
-
-
50
V
Gp
power gain
PL = 500 W
15
17
-
dB
RLin
input return loss
PL = 500 W
-
10
-
dB
PL(1dB)
output power at 1 dB gain compression
-
600
-
W
D
drain efficiency
PL = 500 W
45
50
-
%
Pdroop(pulse)
pulse droop power
PL = 500 W
-
0
0.3
dB
tr
rise time
PL = 500 W
-
20
50
ns
tf
fall time
PL = 500 W
-
6
50
ns
7. Test information
7.1 Ruggedness in class-AB operation
The BLL8H1214L-500 and BLL8H1214LS-500 are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: VDS = 50 V; IDq = 150 mA; PL = 500 W; tp = 300 s;  = 10 %.
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
3 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
7.2 Impedance information
Table 8.
Typical impedance
Typical values per section unless otherwise specified.
f
ZS
ZL
(GHz)
()
()
1.2
1.268  j2.623
2.987  j1.664
1.3
2.193  j2.457
2.162  j1.326
1.4
2.359  j2.052
1.604  j1.887
drain
ZL
gate
ZS
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Test circuit
Table 9.
List of components
For test circuit see Figure 2.
Component
Description
Value
C1
multilayer ceramic chip capacitor
22 F, 35 V
C2
multilayer ceramic chip capacitor
51 pF
[1]
C3, C4
multilayer ceramic chip capacitor
100 pF
[1]
C5, C11, C12
multilayer ceramic chip capacitor
1 nF
[2]
C6
multilayer ceramic chip capacitor
47 pF
[1]
C7, C8, C10
multilayer ceramic chip capacitor
51 pF
[3]
C9
multilayer ceramic chip capacitor
100 pF
[3]
C13
electrolytic capacitor
10 F, 63 V
R1
SMD resistor
56 
R2
metal film resistor
51 
[1]
American Technical Ceramics type 100A or capacitor of same quality.
[2]
American Technical Ceramics type 100B or capacitor of same quality.
[3]
American Technical Ceramics type 800B or capacitor of same quality.
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 3 — 1 September 2015
Remarks
SMD 0603
© Ampleon The Netherlands B.V. 2015. All rights reserved.
4 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
C10
C1
C3
C2
C4
C12
C5
C8
C11
C9
C13
R1
R2
C6
C7
001aaj490
Printed-Circuit Board (PCB): Duroid 6006; r = 6.15 F/m; thickness = 0.64 mm; thickness copper plating = 35 m.
See Table 9 for a list of components.
Fig 2.
Component layout for class-AB production test circuit
7.4 RF performance graphs
7.4.1 Performance curves measured with = 10 %, tp = 300 s and Th = 25 C
aaa-005403
800
PL
(W)
aaa-005404
20
Gp
(dB)
(1) (2)
16
(3)
(1)
(2)
(3)
600
12
400
8
200
4
0
0
0
4
8
12
16
Pi (W)
20
0
VDS = 50 V; IDq = 150 mA.
100
200
400
500
600
PL (W)
700
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(1) f = 1200 MHz
(2) f = 1300 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
(3) f = 1400 MHz
Fig 3.
300
Output power as a function of input power;
typical values
Fig 4.
Power gain as a function of output power;
typical values
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
5 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
aaa-005405
60
aaa-005406
20
(1)
ηD
(%)
60
Gp
(dB)
(2)
(3)
ηD
(%)
ηD
18
50
45
Gp
16
40
14
30
12
20
30
15
0
0
100
200
300
400
500
600
PL (W)
10
1150
700
VDS = 50 V; IDq = 150 mA.
1200
1250
1300
1350
1400
f (MHz)
10
1450
VDS = 50 V; PL = 500 W; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 5.
Drain efficiency as a function of output power;
typical values
Fig 6.
Power gain and drain efficiency as function of
frequency; typical values
aaa-005407
25
RLin
(dB)
20
15
10
5
0
1150
1200
1250
1300
1350
1400
f (MHz)
1450
VDS = 50 V; PL = 500 W; IDq = 150 mA.
Fig 7.
Input return loss as a function of frequency; typical value
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
6 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
7.4.2 Performance curves measured with  = 10 %, tp = 300 s and Th = 65 C
aaa-005408
800
PL
(W)
aaa-005409
20
Gp
(dB)
(1) (2)
600
(3)
(1)
(2)
(3)
17.5
400
15
200
12.5
0
10
0
5
10
15
20
Pi (W)
25
0
VDS = 50 V; IDq = 150 mA.
100
200
(1) f = 1200 MHz
(2) f = 1300 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
(3) f = 1400 MHz
Output power as a function of input power;
typical values
Fig 9.
aaa-005410
60
400
500
600
PL (W)
700
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
Fig 8.
300
ηD
(%)
Power gain as a function of output power;
typical values
aaa-005411
20
60
Gp
(dB)
ηD
(%)
(1)
50
18
50
ηD
(2)
40
(3)
16
40
Gp
30
14
30
12
20
20
10
0
0
100
200
300
400
500
600
PL (W)
700
VDS = 50 V; IDq = 100 mA.
10
1150
1200
1250
1300
1350
1400
f (MHz)
10
1450
VDS = 50 V; PL = 500 W; IDq = 100 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 10. Drain efficiency as a function of output power;
typical values
Fig 11. Power gain and drain efficiency as function of
frequency; typical values
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
7 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
7.4.3 Performance curves measured with  = 10 %, tp = 300 s and f = 1300 MHz
001aal688
700
001aal689
20
PL
(W)
Gp
(dB)
600
18
(1)
500
(2)
(3)
16
400
(1)
(2)
(3)
300
14
200
12
100
0
10
0
5
10
15
20
25
0
100
200
300
400
500
Pi (W)
VDS = 50 V; IDq = 150 mA.
600
700
PL (W)
VDS = 50 V;IDq = 150 mA.
(1) Th = 40 C
(1) Th = 40 C
(2) Th = +25 C
(2) Th = +25 C
(3) Th = +65 C
(3) Th = +65 C
Fig 12. Output power as a function of input power;
typical values
Fig 13. Power gain as a function of output power;
typical values
001aal690
60
(1)
(2)
ηD
(%)
(3)
40
20
0
0
100
200
300
400
500
600
700
PL (W)
VDS = 50 V;IDq = 150 mA.
(1) Th = 40 C
(2) Th = +25 C
(3) Th = +65 C
Fig 14. Drain efficiency as a function of output power; typical values
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
8 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
7.4.4 Performance curves measured with  = 20 %, tp = 500 s and Th = 25 C
001aal691
700
PL
(W)
001aal692
20
Gp
(dB)
600
16
(1)
500
(1)
(2)
(2)
(3)
(3)
12
400
300
8
200
4
100
0
0
0
5
10
15
20
25
0
100
200
300
400
500
Pi (W)
VDS = 50 V; IDq = 150 mA.
600
700
PL (W)
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(1) f = 1200 MHz
(2) f = 1300 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
(3) f = 1400 MHz
Fig 15. Output power as a function of input power;
typical values
001aal693
60
(1)
ηD
(%)
Fig 16. Power gain as a function of output power;
typical values
001aal694
20
Gp
(dB)
45
Gp
(3)
40
ηD
(%)
ηD
18
(2)
55
16
35
14
25
12
15
20
0
0
100
200
300
400
500
600
700
PL (W)
VDS = 50 V; IDq = 150 mA.
10
1.15
1.25
5
1.45
1.35
f (GHz)
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 17. Drain efficiency as a function of output power;
typical values
Fig 18. Power gain and drain efficiency as function of
frequency; typical values
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
9 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
7.4.5 Performance curves measured with  = 20 %, tp = 500 s and Th = 65 C
001aal695
700
PL
(W)
001aal696
20
Gp
(dB)
600
18
(1)
500
(2)
16
(3)
400
(1)
(2)
300
(3)
14
200
12
100
0
10
0
5
10
15
20
25
0
100
200
300
400
500
Pi (W)
VDS = 50 V; IDq = 150 mA.
600
700
PL (W)
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(1) f = 1200 MHz
(2) f = 1300 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
(3) f = 1400 MHz
Fig 19. Output power as a function of input power;
typical values
001aal697
60
Fig 20. Power gain as a function of output power;
typical values
001aal698
20
Gp
(dB)
ηD
(%)
55
ηD
(%)
18
ηD
45
16
Gp
35
(1)
40
(3) (2)
14
25
12
15
20
0
0
100
200
300
400
500
600
700
PL (W)
VDS = 50 V; IDq = 150 mA.
10
1.15
1.25
5
1.45
1.35
f (GHz)
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 21. Drain efficiency as a function of output power;
typical values
Fig 22. Power gain and drain efficiency as function of
frequency; typical values
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
10 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
7.4.6 Performance curves measured with  = 20 %, tp = 500 s and f = 1300 MHz
001aal699
700
001aal700
20
PL
(W)
Gp
(dB)
600
16
(1)
(1)
500
(2)
(2)
(3)
(3)
12
400
300
8
200
4
100
0
0
0
5
10
15
20
25
0
100
200
300
400
500
Pi (W)
VDS = 50 V; IDq = 150 mA.
600
700
PL (W)
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
(1) Th = 40 C
(2) Th = +25 C
(2) Th = +25 C
(3) Th = +65 C
(3) Th = +65 C
Fig 23. Output power as a function of input power;
typical values
Fig 24. Power gain as a function of output power;
typical values
001aal701
60
ηD
(%)
(1)
(2)
40
(3)
20
0
0
100
200
300
400
500
600
700
PL (W)
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
(2) Th = +25 C
(3) Th = +65 C
Fig 25. Drain efficiency as a function of output power; typical values
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
11 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
7.4.7 Performance curves measured with  = 10 %, tp = 1 ms and Th = 25 C
001aal702
700
PL
(W)
001aal703
20
Gp
(dB)
600
16
(1)
500
(1)
(2)
(2)
(3)
(3)
12
400
300
8
200
4
100
0
0
0
5
10
15
20
25
0
100
200
300
400
500
Pi (W)
VDS = 50 V; IDq = 150 mA.
600
700
PL (W)
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(1) f = 1200 MHz
(2) f = 1300 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
(3) f = 1400 MHz
Fig 26. Output power as a function of input power;
typical values
001aal704
60
(1)
ηD
(%)
Fig 27. Power gain as a function of output power;
typical values
001aal705
20
Gp
(dB)
(2)
55
ηD
(%)
ηD
18
45
Gp
(3)
40
16
35
14
25
12
15
20
0
0
100
200
300
400
500
600
700
PL (W)
VDS = 50 V; IDq = 150 mA.
10
1.15
1.25
5
1.45
1.35
f (GHz)
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 28. Drain efficiency as a function of output power;
typical values
Fig 29. Power gain and drain efficiency as function of
frequency; typical values
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
12 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
7.4.8 Performance curves measured with  = 10 %, tp = 1 ms and Th = 65 C
001aal706
700
PL
(W)
001aal707
20
Gp
(dB)
600
16
500
(1)
(1)
(2)
(2)
(3)
(3)
12
400
300
8
200
4
100
0
0
0
5
10
15
20
25
0
100
200
300
400
500
Pi (W)
VDS = 50 V; IDq = 150 mA.
600
700
PL (W)
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(1) f = 1200 MHz
(2) f = 1300 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
(3) f = 1400 MHz
Fig 30. Output power as a function of input power;
typical values
001aal708
60
Fig 31. Power gain as a function of output power;
typical values
001aal709
20
Gp
(dB)
ηD
(%)
(1)
55
ηD
(%)
ηD
18
45
(2)
40
Gp
16
35
(3)
14
25
12
15
20
0
0
100
200
300
400
500
600
700
PL (W)
VDS = 50 V; IDq = 150 mA.
10
1.15
1.25
5
1.45
1.35
f (GHz)
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 32. Drain efficiency as a function of output power;
typical values
Fig 33. Power gain and drain efficiency as function of
frequency; typical values
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
13 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
7.4.9 Performance curves measured with  = 10 %, tp = 1 ms and f = 1300 MHz
001aal710
700
001aal711
20
PL
(W)
Gp
(dB)
600
16
(1)
(1)
500
(2)
(2)
(3)
(3)
12
400
300
8
200
4
100
0
0
0
5
10
15
20
25
0
100
200
300
400
500
Pi (W)
VDS = 50 V; IDq = 150 mA.
600
700
PL (W)
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
(1) Th = 40 C
(2) Th = +25 C
(2) Th = +25 C
(3) Th = +65 C
(3) Th = +65 C
Fig 34. Output power as a function of input power;
typical values
Fig 35. Power gain as a function of output power;
typical values
001aal712
60
(1)
ηD
(%)
(2)
(3)
40
20
0
0
100
200
300
400
500
600
700
PL (W)
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
(2) Th = +25 C
(3) Th = +65 C
Fig 36. Drain efficiency as a function of output power; typical values
BLL8H1214L-500_1214LS-500#3
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Product data sheet
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
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BLL8H1214L(S)-500
LDMOS L-band radar power transistor
8. Package outline
Flanged balanced ceramic package; 2 mounting holes; 4 leads
SOT539A
D
A
F
D1
U1
B
q
C
w2 M C M
H1
1
c
2
E1
p
H U2
5
L
3
A
E
w1 M A M B M
4
w3 M
b
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
mm
4.7
4.2
inches
b
c
D
D1
e
E
E1
11.81 0.18 31.55 31.52
9.50
13.72
11.56 0.10 30.94 30.96
9.30
9.53
9.27
F
H
H1
L
1.75 17.12 25.53 3.48
1.50 16.10 25.27 2.97
p
Q
q
3.30
3.05
2.26
2.01
35.56
U1
U2
w1
41.28 10.29
0.25
41.02 10.03
w2
w3
0.51
0.25
0.185 0.465 0.007 1.242 1.241
0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089
1.625 0.405
1.400
0.010 0.020 0.010
0.540
0.165 0.455 0.004 1.218 1.219
0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079
1.615 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
10-02-02
12-05-02
SOT539A
Fig 37. Package outline SOT539A
BLL8H1214L-500_1214LS-500#3
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Product data sheet
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
15 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
Earless flanged balanced ceramic package; 4 leads
SOT539B
D
A
F
5
D1
D
U1
H1
w2
1
c
D
2
E1
U2
H
E
L
3
4
w3
b
Q
e
0
5
10 mm
scale
Dimensions
Unit(1)
A
b
4.7
11.81
w2
w3
0.25
0.25
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
0.069 0.674 1.005 0.137 0.089 1.275 0.405
0.54
inches nom
0.01
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
0.059 0.634 0.995 0.117 0.079 1.265 0.395
0.01
mm
max
nom
min
c
D
D1
0.18 31.55 31.52
E
E1
9.5
9.53
e
F
H
H1
L
Q
U1
U2
1.75 17.12 25.53 3.48
2.26 32.39 10.29
1.50 16.10 25.27 2.97
2.01 32.13 10.03
13.72
4.2
11.56
0.10 30.94 30.96
9.3
9.27
Note
1. millimeter dimensions are derived from the original inch dimensions.
Outline
version
References
IEC
JEDEC
JEITA
sot539b_po
European
projection
Issue date
12-05-02
13-05-24
SOT539B
Fig 38. Package outline SOT539B
BLL8H1214L-500_1214LS-500#3
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Product data sheet
Rev. 3 — 1 September 2015
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BLL8H1214L(S)-500
LDMOS L-band radar power transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 10.
Abbreviations
Acronym
Description
ESD
ElectroStatic Discharge
L-band
Long wave Band
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
MTF
Median Time to Failure
SMD
Surface Mounted Device
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 11.
Revision history
Document ID
Release date Data sheet status
BLL8H1214L-500_1214LS-500 #3 20150901
Modifications:
Product data sheet
Change notice Supersedes
-
BLL8H1214L-500_1214LS-500
#2
•
The format of this document has been redesigned to comply with the new identity
guidelines of Ampleon.
•
Legal texts have been adapted to the new company name where appropriate.
BLL8H1214L-500_1214LS-500 #2 20150209
Product data sheet
-
BLL8H1214L-500_1214LS-500 #1 20140930
Objective data sheet -
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 3 — 1 September 2015
BLL8H1214L-500_1214LS-500
#1
-
© Ampleon The Netherlands B.V. 2015. All rights reserved.
17 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Definition
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
BLL8H1214L-500_1214LS-500#3
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Product data sheet
Rev. 3 — 1 September 2015
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18 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13. Contact information
For more information, please visit:
http://www.ampleon.com
For sales office addresses, please visit:
http://www.ampleon.com/sales
BLL8H1214L-500_1214LS-500#3
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Product data sheet
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
19 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.4.1
7.4.2
7.4.3
7.4.4
7.4.5
7.4.6
7.4.7
7.4.8
7.4.9
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Impedance information . . . . . . . . . . . . . . . . . . . 4
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
RF performance graphs . . . . . . . . . . . . . . . . . . 5
Performance curves measured with  = 10 %,
tp = 300 s and Th = 25 °C . . . . . . . . . . . . . . . . 5
Performance curves measured with  = 10 %,
tp = 300 s and Th = 65 °C . . . . . . . . . . . . . . . . 7
Performance curves measured with  = 10 %,
tp = 300 s and f = 1300 MHz. . . . . . . . . . . . . . 8
Performance curves measured with  = 20 %,
tp = 500 s and Th = 25 °C . . . . . . . . . . . . . . . . 9
Performance curves measured with  = 20 %,
tp = 500 s and Th = 65 °C . . . . . . . . . . . . . . . 10
Performance curves measured with  = 20 %,
tp = 500 s and f = 1300 MHz. . . . . . . . . . . . . 11
Performance curves measured with  = 10 %,
tp = 1 ms and Th = 25 °C. . . . . . . . . . . . . . . . . 12
Performance curves measured with  = 10 %,
tp = 1 ms and Th = 65 °C. . . . . . . . . . . . . . . . . 13
Performance curves measured with  = 10 %,
tp = 1 ms and f = 1300 MHz . . . . . . . . . . . . . . 14
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
Handling information. . . . . . . . . . . . . . . . . . . . 17
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17
Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Contact information. . . . . . . . . . . . . . . . . . . . . 19
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon The Netherlands B.V. 2015.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLL8H1214L-500_1214LS-500#3
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