2SK2116.2SK2117 Datasheet

2SK2116.2SK2117 Datasheet
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2SK2116, 2SK2117
Silicon N Channel MOS FET
REJ03G0999-0200
(Previous: ADE-208-1347)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for Switching regulator
Outline
RENESAS Package code: PRSS0003AE-A
(Package name: TO-220C• FM)
D
1. Gate
2. Drain
3. Source
G
12
Rev.2.00 Sep 07, 2005 page 1 of 6
3
S
2SK2116, 2SK2117
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Symbol
VDSS
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
2SK2116
2SK2117
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Ratings
450
500
±30
7
28
7
35
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source
breakdown voltage
Symbol
2SK2116
2SK2117
Gate to source breakdown voltage
Gate to source leak current
2SK2116
Zero gate voltage drain
current
2SK2117
V(BR)DSS
V(BR)GSS
IGSS
IDSS
Gate to source cutoff voltage
Static drain to source on 2SK2116
state resistance
2SK2117
RDS(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
Body to drain diode reverse recovery
time
Note:
3. Pulse Test
Rev.2.00 Sep 07, 2005 page 2 of 6
VGS(off)
trr
Min
450
500
±30
30
—
—
Typ
—
Max
—
Unit
V
Test conditions
ID = 10 mA, VGS = 0
—
—
—
—
±10
250
V
µA
µA
2.0
—
—
4.0
—
—
—
—
—
—
—
—
—
—
0.6
0.7
6.5
1050
280
40
15
55
95
40
0.95
320
3.0
0.8
0.9
—
—
—
—
—
—
—
—
—
—
V
Ω
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A, VGS = 10 V*3
S
pF
pF
pF
ns
ns
ns
ns
V
ns
ID = 4 A, VDS = 10 V*3
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 4 A, VGS = 10 V,
RL = 7.5 Ω
IF = 7 A, VGS = 0
IF = 7 A, VGS = 0,
diF / dt = 100 A / µs
2SK2116, 2SK2117
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
50
40
20
10
10
50
100
PW
D
5
C
=
1
10
tio
n
1
m
(1
(T
=
Operation in this Area
is Limited by RDS (on)
0.2
3
Sh
ot
)
25
°C
)
2SK2116
2SK2117
Ta = 25°C
1
µs
s
C
0.5
µs
m
s
ra
0.05
150
0
O
pe
2
0.1
0
10
30
100
300
1,000
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
20
20
10 V
7V
6V
16
Drain Current ID (A)
Drain Current ID (A)
10
20
Drain Current ID (A)
Channel Dissipation Pch (W)
60
Pulse Test
12
5V
8
4
16
–25°C
–25
TC = 25°C
VDS = 20 V
Pulse Test
75°C
12
8
4
VGS = 4 V
10
20
30
40
2
6
4
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
10
Pulse Test
8
10 A
6
4
5A
2
0
0
50
ID = 2 A
4
8
12
16
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
20
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage VDS (on) (V)
0
5
2
Pulse Test
VGS = 10 V
1.0
0.5
15 V
0.2
0.1
0.05
0.5
1.0
2
5
10
20
Drain Current ID (A)
50
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance yfs (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
2SK2116, 2SK2117
2.0
1.6
VGS = 10 V
Pulse Test
ID = 10 A
1.2
2, 5 A
0.8
0.4
0
–40
0
80
40
120
160
75°C
5
2
1.0
0.5
0.1
0.5
0.2
2
1.0
5
Typical Capacitance vs.
Drain to Source Voltage
10
5,000
Capacitance C (pF)
di/dt = 100 A/µs, Ta = 25°C
VGS = 0
Pulse Test
200
100
VGS = 0
f = 1 MHz
Ciss
1,000
Coss
100
Crss
10
5
0.5
1.0
5
2
10
0
20
20
10
30
40
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
400
16
VDD = 100 V
250 V
400 V
VDS
300
12
VGS
200
8
ID = 7 A
100
4
VDD = 400 V
250 V
100 V
0
8
16
24
32
Gate Charge Qg (nc)
Rev.2.00 Sep 07, 2005 page 4 of 6
40
50
500
•
VGS = 10 V VDD = 30 V
PW = 2 µs, duty < 1%
•
Switching Time t (ns)
20
500
Gate to Source Voltage VGS (V)
Reverse Recovery Time trr (ns)
Drain to Source Voltage VDS (V)
TC = 25°C
10
Body to Drain Diode Reverse
Recovery Time
500
0
–25°C
Drain Current ID (A)
1,000
50
0.2
VDS = 20 V
Pulse Test
20
Case Temperature TC (°C)
5,000
2,000
50
200
td (off)
100
50
tf
tr
20
td (on)
10
5
0.2
0.5
1.0
2
5
Drain Current ID (A)
10
20
2SK2116, 2SK2117
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
20
16
Pulse Test
12
8
4
5, 10 V
VGS = 0, –10 V
0
0.4
0.8
1.2
1.6
2.0
Normalized Transient Thermal Impedance γS (t)
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0
TC = 25°C
D=1
0.5
0.3
0.2
θch–c (t) = γ S (t) • θch–c
θch–c = 3.57°C/W, TC = 25°C
0.1
0.1
0.03
0.05
PDM
0.02
0.01
se
ul
ot P
T
h
0.01
10 µ
1S
100 µ
1m
10 m
D = PW
T
PW
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Waveforms
90 %
Vin Monitor
Vout Monitor
Vin
10 %
D.U.T
RL
Vout
50 Ω
Vin = 10 V
Rev.2.00 Sep 07, 2005 page 5 of 6
.
VDD =. 30 V
td (on)
10 %
90 %
tr
10 %
90 %
td (off)
tf
2SK2116, 2SK2117
Package Dimensions
RENESAS Code
Package Name
MASS[Typ.]
PRSS0003AE-A
TO-220CFM / TO-220CFMV
1.9g
0.6 ± 0.1
2.54
4.1 ± 0.3
1.0 ± 0.2
1.15 ± 0.2
φ 3.2 ± 0.2
4.5 ± 0.3
2.7 ± 0.2
12.0 ± 0.3
10.0 ± 0.3
Unit: mm
15.0 ± 0.3

2.54
13.6 ± 1.0
JEITA Package Code
2.5 ± 0.2
0.7 ± 0.1
Ordering Information
Part Name
2SK2116-E
2SK2117-E
Quantity
600 pcs
600 pcs
Shipping Container
Box (Tube)
Box (Tube)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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