30LJQ150 JANS1N7038U3 JANTX1N7038U3 SCHOTTKY RECTIFIER

30LJQ150 JANS1N7038U3 JANTX1N7038U3 SCHOTTKY RECTIFIER
PD-94063C
30LJQ150
JANS1N7038U3
JANTX1N7038U3
JANTXV1N7038U3
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
30Amp, 150V
Ref: MIL-PRF-19500/731
Major Ratings and Characteristics
Characteristics
1N7038U3
IF(AV)
30
VRRM
150
IFSM @ tp = 8.3ms half-sine
140
VF @ 30Apk, TJ =125°C
0.92
TJ,Tstg Operating and storage -65 to 150
Description/Features
The 1N7038U3 Schottky rectifier has been expressly
Units
designed to meet the rigorous requirements of high
reliability environments. It is packaged in the hermetic
A
surface mount SMD-0.5 ceramic package. The device's
forward voltage drop and reverse leakage current are
V
optimized for the lowest power loss and the highest circuit
efficiency for typical high frequency switching power
A
supplies and resonant power converters. Full MIL-PRF19500 quality conformance testing is available on source
V
control drawings to TX, TXV and S quality levels.
°C
•
•
•
•
Hermetically Sealed
Low Forward Voltage Drop
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long term
Reliability
• Surface Mount
• Lightweight
• ESD Rating: Class 1B per MIL-STD-750, Method 1020
CASE STYLE
( ISOLATED BASE )
CATHODE ANODE ANODE
Case Outline and Dimensions - SMD-0.5
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30LJQ150, 1N7038U3
Voltage Ratings
Part number
VR
1N7038U3
Max. DC Reverse Voltage (V)
150
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current
Limits
Units
30
A
50% duty cycle @ TC = 83°C, square waveform
Conditions
140
A
@ tp = 8.3ms half-sine
See Fig. 5
IFSM
Max. Peak One Cycle Non - Repetitive
Surge Current
Electrical Specifications
Parameters
VFM
Limits
Units
Max. Forward Voltage Drop
1.07
V
@15A
Conditions
See Fig. 1
1.26
V
@30A
TJ = -55°C ‚
TJ = 25°C ‚
0.96
V
@15A
1.18
V
@30A
0.75
V
@15A
0.92
V
@30A
Max. Reverse Leakage Current
0.12
mA
TJ = 25°C
See Fig. 2
6.0
mA
TJ = 125°C
CT
Max. Junction Capacitance
340
pF
VR = 5VDC (1MHz, 25°C)
LS
Typical Series Inductance
4.8
nH
IRM
TJ = 125°C ‚
VR = rated VR
Measured from center of cathode pad to center of
anode pad
Thermal-Mechanical Specifications
Parameters
Limits Units
TJ
Max.Junction Temperature Range
-65 to 150
Tstg
Max. Storage Temperature Range
-65 to 150
°C
1.82
°C/W
RthJC Max. Thermal Resistance, Junction
Conditions
°C
DC operation
See Fig. 4
to Case
wt
Weight (Typical)
Die Size (Typical)
Case Style
1.0
125X125
g
mils
SMD-0.5
 Pulse Width < 300µs, Duty Cycle < 2%
‚ Pins 2 and 3 externally tied together
2
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30LJQ150, 1N7038U3
10
Reverse Current - I R ( mA )
125°C
100°C
1
75°C
0.1
25°C
0.01
0.001
0.0001
0
20
40
60
80
100
120
140
160
Reverse Voltage - V R (V)
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
10
1000
Tj = 125°C
Tj = 25°C
Tj = -55°C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Forward Voltage Drop - V F (V)
Junction Capacitance - CT (pF)
Instantaneous Forward Current - I F (A)
100
T J = 25°C
100
10
0
Fig. 1 - Max. Forward Voltage Drop Characteristics
20
40
60
80
100
120
140
160
Reverse Voltage -V R (V)
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
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30LJQ150, 1N7038U3
Thermal Response (Z thJC)
10
D = 0.5
D = 0.4
1
D = 0.3
D = 0.2
D = 0.1
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
Allowable Case Temperature - (°C)
160
R thJC (DC) = 1.82°C/W
140
120
DC
100
80 % Square Wave (D=0.50)
Rated VR applied
80
60
40
20
0
0
5
10
15
20
25
30
35
Average Forward Current - I F (AV) (A)
Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/2012
4
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