2SK2529 Datasheet

2SK2529 Datasheet
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April 1st, 2010
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2SK2529
Silicon N Channel MOS FET
REJ03G1014-0800
(Previous: ADE-208-356F)
Rev.8.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
Low on-resistance
RDS(on) = 7 mΩ typ.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0003AE-A
(Package name: TO-220C•FM)
D
1. Gate
2. Drain
3. Source
G
12
Rev.8.00 Sep 07, 2005 page 1 of 7
3
S
2SK2529
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
IAP*3
EAR*3
Pch*2
Tch
Tstg
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Ratings
60
±20
50
200
50
45
174
35
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
Static drain to source on state
resistance
RDS(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
Body to drain diode reverse
recovery time
Note:
4. Pulse Test
Rev.8.00 Sep 07, 2005 page 2 of 7
trr
Min
60
±20
—
—
1.0
—
—
35
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
7
10
55
3550
1760
500
35
230
470
360
0.85
135
Max
—
—
±10
10
2.0
10
16
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 25 A, VGS = 10 V*4
ID = 25 A, VGS = 4 V*4
ID = 25 A, VDS = 10 V*4
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 25 A, VGS = 10 V,
RL = 1.2 Ω
IF = 50 A, VGS = 0
IF = 50 A, VGS = 0
diF / dt = 50 A / µs
2SK2529
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
500
s
sh
ot
)
n
c
(T
5
(1
io
=
Operation in
this area is
limited by RDS(on)
t
ra
25
2
°C
Drain Current ID (A)
s
m
)
1
50
100
150
0.5
0.1
200
0.3
3
1
10
30
100
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
10 V 6 V
100
Pulse Test
5V
4V
80
3.5 V
60
3V
40
20
VGS = 2.5 V
2
4
6
8
VDS = 10 V
Pulse Test
80
60
40
25°C
Tc = 75°C
20
–25°C
0
10
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
1.0
Pulse Test
0.8
0.6
ID = 50 A
0.4
0.2
20 A
10 A
Static Drain to Source on State Resistance
RDS (on) (Ω)
0
Ta = 25°C
Case Temperature TC (°C)
Drain Current ID (A)
100
Drain Current ID (A)
m
pe
10
µs
20
1
10
µs
0
=
O
10
PW
50
C
20
100
10
30
0
Drain to Source Saturation Voltage VDS (on) (V)
10
200
D
Channel Dissipation Pch (W)
40
0.5
Pulse Test
0.2
0.1
0.05
0.02
VGS = 4 V
0.01
0.005
10 V
0.002
0.001
0.0005
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Rev.8.00 Sep 07, 2005 page 3 of 7
1
3
10
30
100
300
Drain Current ID (A)
1000
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance yfs (S)
Static Drain to Source on State
Resistance vs. Temperature
0.04
Pulse Test
0.032
0.024
ID = 50 A
10, 20 A
0.016
VGS = 4 V
0.008
10, 20, 50 A
10 V
0
–40
0
40
80
120
160
500
200
100
50
5
1
0.5
0.1
0.3
1
3
10
30
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
5000
1000
500
200
100
50
20
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
10
0.3
1
3
10
30
100
Ciss
2000
Coss
1000
500
Crss
200
VGS = 0
f = 1 MHz
100
100
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
16
VDD = 10 V
25 V
50 V
VDS
12
VGS
40
20
4
VDD = 50 V
25 V
10 V
40
80
120
160
Gate Charge Qg (nc)
Rev.8.00 Sep 07, 2005 page 4 of 7
8
0
200
5000
2000
Switching Time t (ns)
20
ID = 50 A
80
0
75°C
2
2000
60
25°C
10
10000
100
Tc = –25°C
20
5000
5
0.1
VDS = 10 V
Pulse Test
Case Temperature TC (°C)
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Reverse Recovery Time t rr (ns)
Static Drain to Source on State Resistance
RDS (on) (Ω)
2SK2529
1000
td(off)
500
tf
200
tr
100
td(on)
50
20
VGS = 10 V, VDS = 30 V
PW = 5 µs, duty < 1 %
10
5
0.1
0.3
1
3
10
30
Drain Current ID (A)
100
2SK2529
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
100
Pulse Test
80
60
10 V
5V
VGS = 0, –5 V
40
20
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
Maximum Avalanche Energy vs.
Channel Temperature Derating
200
IAP = 45 A
VDD = 25 V
duty < 0.1 %
Rg > 50 Ω
160
120
80
40
0
25
50
75
100
125
Channel Temperature Tch (°C)
VSD (V)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 3.57°C/W, Tc = 25°C
0.1
0.05
0.03
PDM
0.02
1
0.0
D=
e
PW
T
PW
uls
tp
o
sh
T
1
0.01
10 µ
100 µ
1m
100 m
10 m
Pulse Width
1
10
PW (S)
Avalanche Test Circuit and Waveform
VDS
Monitor
EAR =
L
1
• L • IAP2 •
2
VDSS
VDSS – VDD
I AP
Monitor
V(BR)DSS
IAP
Rg
D. U. T
VDS
VDD
ID
Vin
15 V
50 Ω
0
Rev.8.00 Sep 07, 2005 page 5 of 7
150
VDD
2SK2529
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vout
Vin
10 V
50 Ω
VDD
= 30 V
10%
10%
90%
td(on)
Rev.8.00 Sep 07, 2005 page 6 of 7
10%
tr
90%
td(off)
tf
2SK2529
Package Dimensions
RENESAS Code
Package Name
MASS[Typ.]
PRSS0003AE-A
TO-220CFM / TO-220CFMV
1.9g
0.6 ± 0.1
2.54
4.1 ± 0.3
1.0 ± 0.2
1.15 ± 0.2
φ 3.2 ± 0.2
12.0 ± 0.3
10.0 ± 0.3
2.54
Unit: mm
4.5 ± 0.3
2.7 ± 0.2
15.0 ± 0.3

2.5 ± 0.2
13.6 ± 1.0
JEITA Package Code
0.7 ± 0.1
Ordering Information
Part Name
2SK2529-E
Quantity
50 pcs
Shipping Container
Plastic magazine
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.8.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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