Amplifiers Capabilities Tour

Amplifiers Capabilities Tour
Spectrum Microwave Presentation
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The Spectrum Family of Businesses
Microwave Components & Systems Business | SpectrumMicrowave.com
- Amplifiers, Mixers, Switches, Oscillators & Sources
- RF/Microwave Filters, Diplexers & Multiplexers, Integrated Multifunction Modules
- Thin Film Substrates, Hybrid Assembly Services
EMI Filter & Components Business | specemc.com
- EMI Surge Suppression Components & Modules
- Power Line Filters & Power Entry Modules
- Interconnect Devices
- Terminal Blocks & Passive Components
Power Management Systems | specpower.com
- Power Management & Distribution Systems
- AC & DC Power Strips
- Power Monitoring Equipment: Environmental, Electrical, Security, Mechanical
Sensors & Controls Business | specsensors.com
- Potentiometers, Temp Sensing Probes, Surge Current Limiters
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Component Overview
Leading designer and manufacturer of RF components and integrated
microwave assemblies (IMAs)
• Products including:
- Amplifiers (Low Phase Noise, LNAs, High Dynamic Range, Power) 1 MHz to 18 GHz
- Mixers from DC to 26 GHz
- Voltage Control Oscillators (VCOs) 25 MHz to 18 GHz
- Dielectric Resonator Oscillators (DROs) 2 GHz to 20 GHz
- RF & Microwave Filters
- Switched Filter Banks, Integrated Products
- Rotary Joints, Phase Shifters, Couplers
• Markets served include:
- Military Electronics, Avionics, Aerospace and Commercial
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30 Years of Design & Manufacturing Experience
• Over 600 Microwave employees (75 Engineers)
• Access to lower cost manufacturing
(Spectrum’s commercial RF facilities in Mexico & China)
A | Columbia, MD
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Acquired July 2002 (FSY)
B | Delmar, DE
Acquired February 2004 (Salisbury Engineering)
C | Palm Bay, FL
5 4
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Acquired October 2004 (Q-bit)
D | Philadelphia, PA
Acquired February 2005 (Amplifonix)
E | State College, PA
Acquired January 2007 (EMF Systems)
F | Marlborough, MA
Acquired September 2008 (Satcon-Film MicroElectronics)
Acquired December 2009 (IDT-MicroNetworks)
G | Auburn, NY
Acquired December 2009 (IDT-Creative Electric)
H | Nashua, NH
Acquired June 2010 (Sage Labs)
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Global Design & Manufacturing Locations
Substrate Manufacturing
- In-house thin & thick film capability
Electronics Production
- Precision hybrid, CCA & MIC capability
Mechanical Production
- Precision machined parts
Integration & Testing
- Full RF/Microwave and environmental testing
Documented Procedures
- ISO 9001:2000 Certified
Unified Design Tools
- Genesys, Solidworks
Personnel
- Over 600 microwave employees
- Over 75 engineers (and hiring)
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Juarez Operation
Spectrum Microwave Low Cost
Manufacturing Center: MEXICO
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Dongguan Operation
Spectrum Microwave Low Cost
Manufacturing Center: CHINA
Domestic Airports
- Shenzhen
- Guangzhou (also Intl.)
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Product Line Overview
• Hybrid Components, Mixers & Advanced Technologies
- In-house thin & thick film capability
- 30 year heritage design database
- Quick turn prototypes (2-4 days)
- Complete testing & ESS capability
- Rapid military to low cost conversion
- Modular assemblies
• Filter Components & Integrated Filter Assemblies
- Complete filter solutions
- In-house machining
- Complete testing & ESS capability
- 20 year heritage design database
- Focused design centers for quick turn prototypes
(2-4 weeks)
• Frequency Sources & Integrated Microwave Assemblies
- 80% critical component content
- In-house development of ATE
- 25 IMA engineers with 22 years average experience
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Amplifiers | Packages-Hybrid
• Hermetically Sealed
- 100% testing over temperature extremes
- Gross and fine leak
- Constant acceleration up to 10,000 g
- 160 hour burn-in at 125oC
• Ceramic Surface Mount (QBH-8000 series)
- Alumina substrate and cover
- Thick film metallization
- Utilize both chip & wire, and SMT components
- 100% testing at 125oC
• Generation II (QBH-2000 series)
- Soft substrate (PTFE) designs
- Strictly surface mount components
- Assembled with Sn96
• Standard Commercial
- Developed by large manufacturers (i.e. Motorola, Philips)
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Amplifiers | Performance
• Gain Blocks
- Frequency Range: 1 MHz to 18 GHz
- RF/IF drivers and LO buffer amps in Integrated Microwave Assemblies (IMAs)
- Transistor die - extended operating temperature range, -55oC to +125oC
- Power feedback below 1.5 GHz - high reverse isolation reducing load sensitivity (QBH-1401)
- Frequency selective matching circuits reduces “out-of-band” gain
- Improved efficiency with autotransformers and current sharing
- Low phase noise
- LCA package for cost sensitive programs (< $35)
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Amplifiers | Hi-Reverse Isolation
• Palm Bay (previously Q-bit) Hi-Reverse
Isolation designs are typically 10-15 dB
better than general RF amplifiers
• Excellent in Synthesizers, Exciters
and Oscillator Assemblies
• Often saves customer the price
and real estate of an isolator
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Amplifiers | Low Noise Performance
• Low Noise Amplifiers
- 10 MHz to 6000 MHz
- Low frequency (<500 MHz) designs generally use silicon bipolar transistors and incorporate
the low loss benefits of power feedback to adjust gain and VSWR
- High frequency (>500 MHz) designs based on GaAs MESFET and PHEMT technology
- Integrate high Q components (I.e. air coils, low ESR caps)
- Discrete first stage followed by MMICs
• QBH-920
• QBH-2001
- 30-200 MHz
- 1.4 dB typical noise figure
- 8.0 dB gain
- 3rd/2nd order IP: 42/59 dBm
- +15.0 Vdc/29 mA
- 1200-1600 MHz
- 0.85 dB noise figure
- 22.0 dB gain
- +3.0 dBm P1dB
- +5.0 Vdc/40 mA
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Amplifiers | Broadband Performance
• Broadband
- Combine low Q resistive feedback networks, voltage shunt and current series, to establish
gain window and input/output VSWR
- Use discrete Silicon Bipolar or GaAs MESFET/PHEMPT devices in die form to tightly control
the parasitic inductance of wire bonds
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Amplifiers | Low Noise Amplifiers
• QB-914
- 4.0-8.0 GHz
- Gain: 32 dB typical
- NF: 1.8 dB
- P1dB: 17 dBm
- 3rd order IP: 23 dBm
- +12 Vdc/125 mA
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Amplifiers | High Dynamic Range Performance
• High Dynamic Range
- Relatively low noise with excellent linearity (low distortion)
- Bias medium power transistors (<4 watts) at 10-20% loss to achieve an optimum tradeoff
between noise figure and distortion
- Low frequency (<200 MHz) designs - push-pull configuration using Si bipolar devices in a
patented feedback topology (QB-101)
- Used as the input stage in multi-carrier receivers. Allows reception of large input signals
without distorting the amplifier output.
• QB-101
• QBH-5674B
- IF Amplifier
- 2-70 MHz
- 22.0 dB gain
- 4.0 dB Noise Figure
- 3rd/2nd Order
• Output IP3 +54 dBm
• Output IP2 +110 dBm
- +24 Vdc/400 mA
- Military/Space
- 3.0-4.0 GHz
- 15.0 dB gain
- 1.7 dB Noise Figure
- +36.0 dBm 3rd Order OIP
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Amplifiers | Architecture/Topologies
• Resistive Feedback
- Ultra wideband with performance over multiple octaves
- Reverse isolation is typically 6 dB higher than the gain
- Easy to integrate making it ideal for multiple gain stages in a small package
• Resistive Feedback
- Use twisted-wire transformers, printed 3 dB hybrids, or Lange
couplers to combine parallel stages, 90° out of phase
- Maintain excellent input/output VSWR while intentionally
mismatching the RF transistor to optimize noise figure, output
power, and distortion
- Redundant design - if a branch fails, noise figure increases
3 dB and gain drops about 6 dB
• Push-Pull
- Baluns (balanced to unbalanced) connect parallel cascode
stages 180° out of phase
- Broadband with excellent gain stability and linearity, especially
the 2nd Order OIP. Configuration theoretically cancels
even-harmonic distortion products
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Amplifiers | Ultra Low Phase Noise Performance
• Ultra Low Phase Noise
- We achieve guaranteed (100% tested) performance using high performance
silicon bipolar transistors in unique circuits up to 2 GHz
• Benefits
- Improves error rate in telemetry apps
- Improved sub-clutter visibility in radar apps
- Better signal to noise ratio in receivers
TM9119PM
Frequency
100 Hz
1 kHz
10 kHz
100 kHz
1 MHz
Typical
-165
-172
-177
-179
-180
Guaranteed
-160 dBc/Hz
-167 dBc/Hz
-172 dBc/Hz
-174 dBc/Hz
-175 dBc/Hz
Spectrum is the only hybrid amp manufacturer that guarantees low-phase noise performance on it’s
standard line of parts. We’ve invested heavily in high-performance test equipment including Agilent
network analyzers, low-phase noise signal generators, an enhanced Agilent ES5500 phase noise
measurement system, and additional in-house environmental test equipment
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Amplifiers | Ultra Low Phase Noise Performance
• Ultra Low Phase Noise
- Guaranteed performance (100% lot testing) up to 6.0 GHz
• Frequency <2 GHz
- Use silicon bipolar transistors. Combine multiple die
with high ft in parallel to achieve bandwidth and power
600 MHz @ Pout = +24 dBm
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Amplifiers | Ceramic Lower Cost Amplifiers
• Ceramic Surface Mount Hybrid
- Units shipped in feeder tubes, or tape & reel for automated PCB assembly
- Able to convert designs in hermetic packages into cost-effective surface mount
solutions for the customer without performance degradation
- Excellent thermal characteristics - RF transistor is eutectically attached to a
copper carrier, which is soldered directly to the package heat spreader
Chip Heat Spreader
Semiconductor Chip
J-Lead
PCB
Plated
through
vias
Heat sink
Package Heat Spreader
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Amplifiers | Ceramic Lower Cost Amplifiers
• PCB Materials: Thin Film
- High circuit density with fine line geometries
- Purchase metallized substrates - Alumina (99.5%),
BeO and AIN
- State College facility capable of etching circuit patterns
with an accuracy of 2.0 mil wide lines and 2.0 mil spacing
• PCB Materials: Thick Film
- Purchase Alumina (96%) substrates with machined vias
and/or slots for transistor carriers
- Screen print and fire the circuit pattern with
the following pastes:
• Gold - wire bonding
• Palladium silver - solder chip components,
thermocompression (TC) welding
• Resistive pastes - bias networks/attenuators
- Thick film copper available for high volume applications
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Amplifiers | Generation II Package
• Generation II Product
- Packaged in tape & reel for pick and place applications.
- Completely automated assembly with a single
reflow to attach components and cover
- No tuning / alignment
- Metal cover provides circuit isolation
- LNA and lower power (P1dB < 26 dBm) designs
- Intended for high volume applications; price < $15
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Amplifiers | Ceramic Lower Cost Amplifiers
• LCA assembled with high volume processes
- Extensive use of fixtures
• Screen print solder paste in the array
• Align and reflow backside heat spreader in the array
• Eutectic attach transistor in SST (vacuum reflow) using carbon “boats” to align
die on copper carrier, 20x20 matrix or larger
- Automated pick & place of chip components in the array
- Autobonder
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Amplifiers | Ceramic Lower Cost Amplifiers
• Provides Cost Effective Solution
Customer’s needs
Spectrum’s
LCA
MMICs
Never Obsolete

End-of-life / Next generation forces
system redesign.
True 50 Ohm Match

Additional components means additional
design time and Real Estate.
Superior Phase Noise

Not tested or guaranteed in production.
Guaranteed Performance
-55ºC to +85ºC

Always Typical Values / Graphs.
No External
Components Needed

Blocking caps are just the beginning…
Low Cost


- Frequencies to 4000 MHz
- Output power to 4 watts
- Noise as low as 0.8 dB
- No external biasing or RF matching circuits required
- Available in tape & reel
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Large Cu/Mo Ground Plate
Amplifiers | Broadband Power Amplifiers
• QB-904
- Class AB, 3 stage design
- +24 VDC/900 mA @ Pout
- Balanced architecture for good VSWR
- Combination of PHEMPT and GaN device
technologies in die form
- 35 dB gain with 4 watts Pout
Specifications
Parameters (Typical at 25oC)
Amplifier Series
Frequency Range (MHz)
Gain (dB)
Gain Flatness (dB)
Power Output (dBm)
DC Voltage (Vdc)
DC Current (mA Quiescent)
Noise Figure (dB)
RF Input/RF Output Connector
DC Input
Power Amplifier Models
QB-904 (4 watt)
QB-910 (1/2 watt)
2,000-6,000
2,000-6,000
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+/- 2.5
+/- 2.0
+36
+28
23-29
23-29
285
185
8
7
SMA Female or Gold Plated 0.015 pin
SMA Female or Gold Plated 0.015 pin
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QB-909 (Medium Gain)
2,000-6,000
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+/- 1.0
+19
8
100
5.5
Amplifiers | Performance
• Medium Power
- Frequency range - 1 MHz to 6 GHz
- Hybrids are class A with output powers up to 4 watts @ P1dB
- Connect parallel stages in a push-pull or balanced configuration
• Design miniature 90o hybrid couplers and baluns adjust the windings to optimize parameters
• Topology distributes heat throughout the package
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Amplifiers | QB-904 Performance, 4 watts 2-6 GHz
• QB-904
- 3 Stage Amplifier with Internal Voltage Regulation
- Class AB Biased for Radar, Jammers, Communications Transmit Applications
- Balanced Output Stage for Good Broadband Output Return Loss
- 4 watts Output Power over 2 to 6 GHz Band
- Filtered Input (18 dB/Octave filter roll-off)
- Latest Gallium Nitride (GaN) device Technology
- 38 dB Small Signal Gain
- Connectorized or Printed Wiring Board Mount (solder attach 0.015” pins)
- Small Size
- Optional Heat Sink Available
+24 to +28 vdc
- vdc
AR3A
AR2
Highpass
Filter
AR1
RF input
+ vdc
Power Conditioning
(Voltage Regulator,
Negative Bias Supply)
AR3B
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RF Output
Amplifiers | QB-904 Performance, 4 watts 2-6 GHz
Specifications
Parameters (Typical at 25oC)
Typical Specifications
Frequency Range
Small Signal Gain
Gain Flatness
Input Loss Return
Output Return Loss
Output Power (Psat)
DC Voltage (Vdc)
DC Current (mA Quiescent)
Noise Figure (dB)
RF Input/Output Connector
DC Input Connector
2.0 to 6.0 GHz
38 dB
+/- 3.0 dB
10 dB
12 dB
+36 dBm
+23 to +29 VDC
285 mA
8 dB
SMA Female or Gold Plated 0.015 pin
SMA Female or Gold Plated 0.015 pin
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Amplifiers | QB-910 Performance, 0.5 watts 2-6 GHz
Specifications
Parameters (Typical at 25oC)
Typical Specifications
Frequency Range
Small Signal Gain
Gain Flatness
Input Loss Return
Output Return Loss
Output Power (Psat)
DC Voltage (Vdc)
DC Current (mA Quiescent)
Noise Figure (dB)
RF Input/Output Connector
DC Input Connector
2.0 to 6.0 GHz
27 dB
+/- 2.0 dB
10 dB
8 dB
+28 dBm
+23 to +29 VDC
185 mA
8 dB
SMA Female or Gold Plated 0.015 pin
SMA Female or Gold Plated 0.015 pin
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Amplifiers | QB-909 Performance 19 dBm, 2-6 GHz
Specifications
Parameters (Typical at 25oC)
Typical Specifications
Frequency Range
Small Signal Gain
Gain Flatness
Input Loss Return
Output Return Loss
Output Power (Psat)
DC Voltage (Vdc)
DC Current (mA Quiescent)
Noise Figure (dB)
RF Input/Output Connector
DC Input Connector
2.0 to 6.0 GHz
17 dB
+/- 1.0 dB
12 dB
12 dB
+19 dBm
+8 VDC
100 mA
5.5 dB
SMA Female or Gold Plated 0.015 pin
SMA Female or Gold Plated 0.015 pin
- Single stage amplifier
- Class A biased for radar, jammers,
communications transmit applications
- P1dB +18 dBm over 2-6 GHz band
- 18 dB small signal gain
-Connectorized or printed wiring
board mount (solder attach 0.015” pins)
- Small size, hermetically sealed
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Amplifiers | High Frequency Integrated Amplifiers
• QB-911
Power Conditioning, EMC Suppression and
Temperature Compensation
J9
Coupling
AR2
Gain Slope
Adjust
AR1
- Frequency 2-18 GHz (4 phase tracked amplifier assemblies)
- Consists of…
• 2 stage amplifier (4 channels)
J9
• Broadband detector
• Gain compensator
• Digital fault circuits
J1 (RF IN)
• Power conditioning
• Complex packaging
J2 (RF Out)
Equalizer
C1
A1
Bit J2
Vdc
Channel 1
J4 (RF IN)
J3 (RF Out)
Channel 2
J5 (RF IN)
Channel 3
J8 (RF IN)
Channel 4
Band 2/3 Amplifier Module Assembly
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Bit J3
J6 (RF Out)
Bit J6
J7 (RF Out)
Bit J7
Quality & Reliability
ISO 9001:2000 Quality Operating System
• MIL-PRF-38534 Product Screening and qualification capability
- Device screening and groups A, B, C, and D qualification (when required by order)
- Environment testing per MIL-STD-883 test methods
• Other specifications guidelines
- J-STD-001 Class 3 and IPC-A-610, for eutectic attach and general soldering processes
- IPC-7711 and IPC-7721, for rework and authorized repair operations
• Quality assurance programs
- Calibration recall program for test and measurement equipment
- Facility ESD program
- Failure analysis and corrective action system
- Internal ISO audit program
- Operator training program
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Design & Development Process
Logistics
1
6
2
Simulation
& Design
Specification
Development
Testing
5
3
4
Manufacturing
Prototyping
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33
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