datasheet for A29160 by AMIC Technology

datasheet for A29160 by AMIC Technology
A29160 Series
2M X 8 Bit / 1M X 16 Bit CMOS 5.0 Volt-only,
Boot Sector Flash Memory
Document Title
2M X 8 Bit / 1M X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory
Revision History
Rev. No.
History
Issue Date
Remark
0.0
Initial issue
July 13, 2009
Preliminary
0.1
Add WP to TSOP and TFBGA package
Modify the pin configuration error of TFBGA
April 7, 2010
0.2
November 30, 2009
Modify the error of CFI codes of VCC Max, VCC Min, and minor version
Update byte mode, word mode program time, sector and chip erase time;
typical word mode active read current chart
Add Part Numbering Scheme
0.3
Page 1: Change from typical 100,000 cycles to minimum 100,000 cycles
(November, 2010, Version 0.3)
November 25, 2010
AMIC Technology, Corp.
A29160 Series
2M X 8 Bit / 1M X 16 Bit CMOS 5.0 Volt-only,
Boot Sector Flash Memory
Features
̈ Single power supply operation
- Full voltage range: 4.5 to 5.5 volt for read and write
operations
̈ Access times:
- 55/70 (max.)
̈ Current:
- 20 mA typical active read current
- 30 mA typical program/erase current
- 0.5uA typical CMOS standby ( WP = VCC or Float)
̈ Flexible sector architecture
- 16 Kbyte/ 8 KbyteX2/ 32 Kbyte/ 64 KbyteX31 sectors
- 8 Kword/ 4 KwordX2/ 16 Kword/ 32 KwordX31 sectors
- Any combination of sectors can be erased
- Supports full chip erase
- Sector protection:
A hardware method of protecting sectors to prevent any
inadvertent program or erase operations within that
sector. Temporary Sector Unprotect feature allows code
changes in previously locked sectors
̈ Unlock Bypass Program Command
- Reduces overall programming time when issuing
multiple program command sequence
̈ Top or bottom boot block configurations available
̈ Embedded Algorithms
- Embedded Erase algorithm will automatically erase the
entire chip or any combination of designated sectors and
verify the erased sectors
- Embedded Program algorithm automatically writes and
verifies data at specified addresses
̈ Minimum 100,000 program/erase cycles per sector
̈ 20-year data retention at 125°C
- Reliable operation for the life of the system
̈ CFI (Common Flash Interface) compliant
- Provides device-specific information to the system,
allowing host software to easily reconfigure for different
Flash devices
̈ Compatible with JEDEC-standards
- Pinout and software compatible with single-power-supply
Flash memory standard
- Superior inadvertent write protection
̈ Data Polling and toggle bits
- Provides a software method of detecting completion of
program or erase operations
̈ Ready / BUSY pin (RY / BY )
- Provides a hardware method of detecting completion of
program or erase operations (not available on 44-pin
SOP)
̈ Erase Suspend/Erase Resume
- Suspends a sector erase operation to read data from, or
program data to, a non-erasing sector, then resumes the
erase operation
̈ Hardware reset pin ( RESET )
- Hardware method to reset the device to reading array
data
̈ WP input pin (48 pins TSOP, TFBGA)
- At VIL, protects the 16Kbyte boot sector from erasure
regardless of sector protect/unprotect status.
- At VIH, allows removal of boot sector protection.
̈ Package options
- 44-pin SOP or 48-pin TSOP (I) or 48-ball TFBGA
- All Pb-free (Lead-free) products are RoHS compliant
General Description
states. To eliminate bus contention the device has separate
chip enable ( CE ), write enable ( WE ) and output enable
The A29160 is a 16Mbit, 5.0 volt-only Flash memory
organized as 2,097,152 bytes of 8 bits or 1,048,576 words of
16 bits each. The 8 bits of data appear on I/O0 - I/O7; the 16
bits of data appear on I/O0~I/O15. The is offered in 48-ball
FBGA, 44-pin SOP and 48-Pin TSOP packages. This device
is designed to be programmed in-system with the standard
system 5.0 volt VCC supply. Additional 12.0 volt VPP is not
required for in-system write or erase operations. However,
the A29160 can also be programmed in standard EPROM
programmers.
The A29160 has the first toggle bit, I/O6, which indicates
whether an Embedded Program or Erase is in progress, or it
is in the Erase Suspend. Besides the I/O6 toggle bit, the
A29160 has a second toggle bit, I/O2, to indicate whether the
addressed sector is being selected for erase. The A29160
also offers the ability to program in the Erase Suspend mode.
The standard A29160 offers access times of 55 and 70,
allowing high-speed microprocessors to operate without wait
(November, 2010, Version 0.3)
( OE ) controls.
The device requires only a single 5.0 volt power supply for
both read and write functions. Internally generated and
regulated voltages are provided for the program and erase
operations.
The A29160 is entirely software command set compatible
with the JEDEC single-power-supply Flash standard.
Commands are written to the command register using
standard microprocessor write timings. Register contents
serve as input to an internal state-machine that controls the
erase and programming circuitry. Write cycles also internally
latch addresses and data needed for the programming and
erase operations. Reading data out of the device is similar to
reading from other Flash or EPROM devices.
1
AMIC Technology, Corp.
A29160 Series
The hardware sector protection feature disables operations
for both program and erase in any combination of the
sectors of memory. This can be achieved via programming
equipment.
The Write Protect ( WP ) features protects the 16 Kbyte boot
sector from erasure by asserting a logic low on the WP pin,
whether or not the sector had been previously protected.
The Erase Suspend/Erase Resume feature enables the user
to put erase on hold for any period of time to read data from,
or program data to, any other sector that is not selected for
erasure. True background erase can thus be achieved.
The hardware RESET pin terminates any operation in
progress and resets the internal state machine to reading
array data. The RESET pin may be tied to the system reset
circuitry. A system reset would thus also reset the device,
enabling the system microprocessor to read the boot-up
firmware from the Flash memory.
The device offers power-saving features. The system can
place the device into the standby mode. Power consumption
is greatly reduced in the standby modes.
Device programming occurs by writing the proper program
command sequence. This initiates the Embedded Program
algorithm - an internal algorithm that automatically times the
program pulse widths and verifies proper program margin.
Device erasure occurs by executing the proper erase
command sequence. This initiates the Embedded Erase
algorithm - an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper erase margin. The Unlock Bypass mode
facilitates faster programming times by requiring only two
write cycles to program data instead of four.
The host system can detect whether a program or erase
operation is complete by observing the RY / BY pin, or by
reading the I/O7 ( Data Polling) and I/O6 (toggle) status bits.
After a program or erase cycle has been completed, the
device is ready to read array data or accept another
command.
The sector erase architecture allows memory sectors to be
erased and reprogrammed without affecting the data
contents of other sectors. The A29160 is fully erased when
shipped from the factory.
Pin Configurations
̈ SOP
̈ TSOP (I)
WE
1
44
A18
2
43
A19
A17
3
42
A8
A7
4
41
A9
A6
5
40
A10
A5
6
39
A11
A4
7
38
A12
A3
8
37
A13
A2
9
36
A14
A1
10
35
A15
A0
11
34
A16
33
BYTE
32
VSS
I/O15 (A-1)
A29160M
RESET
CE
12
VSS
13
OE
14
31
I/O0
15
30
I/O7
I/O8
16
29
I/O14
I/O1
17
28
I/O6
I/O9
18
27
I/O13
I/O2
19
26
I/O5
I/O10
20
25
I/O12
I/O3
21
24
I/O4
I/O11
22
23
VCC
(November, 2010, Version 0.3)
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE
RESET
NC
WP
RY/BY
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
A29160V
2
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE
VSS
I/O15 (A-1)
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
VSS
CE
A0
AMIC Technology, Corp.
A29160 Series
Pin Configurations (continued)
(November, 2010, Version 0.3)
3
AMIC Technology, Corp.
A29160 Series
Block Diagram
RY/BY
I/O0 - I/O15 (A-1)
VCC
VSS
Sector Switches
Input/Output
Buffers
Erase Voltage
Generator
RESET
WP
State
Control
WE
PGM Voltage
Generator
Command
Register
BYTE
Chip Enable
Output Enable
Logic
CE
OE
VCC Detector
Address Latch
STB
Timer
A0-A19
STB
Data Latch
Y-Decoder
Y-Gating
X-decoder
Cell Matrix
Pin Descriptions
Pin No.
Description
A0 - A19
Address Inputs
I/O0 - I/O14
Data Inputs/Outputs
I/O15
I/O15 (A-1)
A-1
LSB Address Input, Byte Mode
CE
Chip Enable
WE
Write Enable
WP
Write Protection
OE
Output Enable
RESET
Hardware Reset
BYTE
Selects Byte Mode or Word Mode
RY/ BY
Ready/ BUSY - Output
VSS
Ground
VCC
Power Supply
NC
(November, 2010, Version 0.3)
Data Input/Output, Word Mode
Pin not connected internally
4
AMIC Technology, Corp.
A29160 Series
Absolute Maximum Ratings*
*Comments
Storage Temperature Plastic Packages. . . -65°C to + 150°C
Ambient Temperature with Power Applied. -55°C to + 125°C
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to +7.0V
A9, OE & RESET (Note 2) . . . . . . . . .. . . . -2.0V to +11.5V
All other pins (Note 1) . . . . . . . . . . . . . . . … . . -2.0V to 7.0V
Output Short Circuit Current (Note 3) . . . . . . . …. . 200mA
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of
this device at these or any other conditions above
those indicated in the operational sections of these
specification is not implied or intended. Exposure to
the absolute maximum rating conditions for extended periods
may affect device reliability.
Notes:
Operating Ranges
1. Minimum DC voltage on input or I/O pins is -0.5V. During
voltage transitions, input or I/O pins may undershoot VSS
to -2.0V for periods of up to 20ns. Maximum DC voltage
on input and I/O pins is VCC +0.5V. During voltage
transitions, input or I/O pins may overshoot to VCC +2.0V
for periods up to 20ns.
2. Minimum DC input voltage on A9, OE and RESET is -
Commercial (C) Devices
Ambient Temperature (TA) . . . . . . . . . . . . . . . . 0°C to +70°C
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . . . . . . . -40°C to +85°C
0.5V. During voltage transitions, A9, OE and RESET
may overshoot VSS to -2.0V for periods of up to 20ns.
Maximum DC input voltage on A9 is +11.5V which may
overshoot to 13.5V for periods up to 20ns.
3. No more than one output is shorted at a time. Duration of
the short circuit should not be greater than one second.
VCC Supply Voltages
VCC for all devices . . . . . . . . . . . . . . . . . …...+4.5V to +5.5V
Operating ranges define those limits between which the
functionally of the device is guaranteed.
Device Bus Operations
command. The contents of the register serve as inputs to the
internal state machine. The state machine outputs dictate the
function of the device. The appropriate device bus operations
table lists the inputs and control levels required, and the
resulting output. The following subsections describe each of
these operations in further detail.
This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register itself does
not occupy any addressable memory location. The register is
composed of latches that store the commands, along with
the address and data information needed to execute the
Table 1. A29160 Device Bus Operations
Operation
CE
OE
WE
WP
RESET
A0 – A19
(Note 1)
I/O0 - I/O7
I/O8 - I/O15
Read
L
L
H
X
H
AIN
DOUT
DOUT
Write
L
H
L
H
AIN
DIN
DIN
VCC ±
0.3 V
L
X
X
X
High-Z
High-Z
H
X
VCC ±
0.3 V
H
L
X
H
X
See
Note 3
See
Note 4
X
X
BYTE =VIL
I/O8~I/O14=High-Z
I/O15=A-1
I/O8~I/O14=High-Z
I/O15=A-1
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
L
H
L
X
VID
X
X
Sector Address,
A6=L, A1=H, A0=L
DIN
X
X
L
H
L
X
VID
Sector Address,
A6=H, A1=H, A0=L
DIN
X
X
X
X
X
See
Note 3
VID
AIN
DIN
DIN
X
CMOS Standby
Output Disable
Hardware Reset
Sector Protect
(See Note 2)
Sector Unprotect
(See Note 2)
Temporary Sector
Unprotect
BYTE =VIH
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 10.5 ± 1.0V, X = Don't Care, DIN = Data In, DOUT = Data Out, AIN = Address In
Notes:
1. Addresses are A19:A0 in word mode ( BYTE =VIH), A19: A-1 in byte mode ( BYTE =VIL).
2. See the “Sector Protection/Unprotection” section and Temporary Sector Unprotect for more information.
3. The 16Kbyte boot sector is protected from erasure when WP = VIL
4. In CMOS mode, WP must be at VCC or left floating.
(November, 2010, Version 0.3)
5
AMIC Technology, Corp.
A29160 Series
Characteristics" section contains timing specification tables
and timing diagrams for write operations.
Word/Byte Configuration
The BYTE pin determines whether the I/O pins I/O15-I/O0
operate in the byte or word configuration. If the BYTE pin is
set at logic ”1”, the device is in word configuration, I/O15-I/O0
are active and controlled by CE and OE .
Program and Erase Operation Status
During an erase or program operation, the system may
check the status of the operation by reading the status bits
on I/O7 - I/O0. Standard read cycle timings and ICC read
specifications apply. Refer to "Write Operation Status" for
more information, and to each AC Characteristics section for
timing diagrams.
If the BYTE pin is set at logic “0”, the device is in byte
configuration, and only I/O0-I/O7 are active and controlled by
CE and OE . I/O8-I/O14 are tri-stated, and I/O15 pin is used
as an input for the LSB(A-1) address function.
Standby Mode
Requirements for Reading Array Data
When the system is not reading or writing to the device, it
can place the device in the standby mode. In this mode,
current consumption is greatly reduced, and the outputs are
placed in the high impedance state, independent of the OE
input.
To read array data from the outputs, the system must drive
the CE and OE pins to VIL. CE is the power control and
selects the device. OE is the output control and gates array
data to the output pins. WE should remain at VIH all the time
during read operation. The BYTE pin determines whether
the device outputs array data in words and bytes. The
internal state machine is set for reading array data upon
device power-up, or after a hardware reset. This ensures that
no spurious alteration of the memory content occurs during
the power transition. No command is necessary in this mode
to obtain array data. Standard microprocessor read cycles
that assert valid addresses on the device address inputs
produce valid data on the device data outputs. The device
remains enabled for read access until the command register
contents are altered.
See "Reading Array Data" for more information. Refer to the
AC Read Operations table for timing specifications and to the
Read Operations Timings diagram for the timing waveforms,
lCC1 in the DC Characteristics table represents the active
current specification for reading array data.
The device enters the CMOS standby mode when the CE &
RESET pins are both held at VCC ± 0.5V. (Note that this is a
more restricted voltage range than VIH.) If CE and RESET
are held at VIH, but not within VCC ± 0.5V, the device will be
in the standby mode, but the standby current will be greater.
The device requires the standard access time (tCE) before it
is ready to read data.
If the device is deselected during erasure or programming,
the device draws active current until the operation is
completed.
ICC3 and ICC4 in the DC Characteristics tables represent the
standby current specification.
Output Disable Mode
When the OE input is at VIH, output from the device is
disabled. The output pins are placed in the high impedance
state.
Writing Commands/Command Sequences
RESET : Hardware Reset Pin
To write a command or command sequence (which includes
programming data to the device and erasing sectors of
memory), the system must drive WE and CE to VIL, and
The RESET pin provides a hardware method of resetting
the device to reading array data. When the system drives the
RESET pin low for at least a period of tRP, the device
immediately terminates any operation in progress, tristates
all data output pins, and ignores all read/write attempts for
the duration of the RESET pulse. The device also resets the
internal state machine to reading array data. The operation
that was interrupted should be reinitiated once the device is
ready to accept another command sequence, to ensure data
integrity.
Current is reduced for the duration of the RESET pulse.
When RESET is held at VSS ± 0.5V, the device draws
CMOS standby current (ICC4). If RESET is held at VIL but not
within VSS ± 0.5V, the standby current will be greater.
The RESET pin may be tied to the system reset circuitry. A
system reset would thus also reset the Flash memory,
enabling the system to read the boot-up firmware from the
Flash memory.
If RESET is asserted during a program or erase operation,
the RY/ BY pin remains a “0” (busy) until the internal reset
operation is complete, which requires a time tREADY (during
Embedded Algorithms). The system can thus monitor
RY/ BY to determine whether the reset operation is
complete. If RESET is asserted when a program or erase
operation is not executing (RY/ BY pin is “1”), the reset
operation is completed within a time of tREADY (not during
OE to VIH. For program operations, the BYTE pin
determines whether the device accepts program data in
bytes or words, Refer to “Word/Byte Configuration” for more
information. The device features an Unlock Bypass mode to
facilitate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are required to
program a word or byte, instead of four.
The “Word / Byte Program Command Sequence” section has
details on programming data to the device using both
standard and Unlock Bypass command sequence. An erase
operation can erase one sector, multiple sectors, or the
entire device. The Sector Address Tables indicate the
address range that each sector occupies. A "sector address"
consists of the address inputs required to uniquely select a
sector. See the "Command Definitions" section for details on
erasing a sector or the entire chip, or suspending/resuming
the erase operation.
After the system writes the autoselect command sequence,
the device enters the autoselect mode. The system can then
read autoselect codes from the internal register (which is
separate from the memory array) on I/O7 - I/O0. Standard
read cycle timings apply in this mode. Refer to the
"Autoselect Mode" and "Autoselect Command Sequence"
sections for more information.
ICC2 in the DC Characteristics table represents the active
current specification for the write mode. The "AC
(November, 2010, Version 0.3)
6
AMIC Technology, Corp.
A29160 Series
Embedded Algorithms). The system can read data tRH after
the RESET pin return to VIH.
Refer to the AC Characteristics
parameters and diagram.
tables
for RESET
Table 2. A29160 Top Boot Block Sector Address Table
Sector
SA0
A19
0
A18
0
A17
0
A16
0
A15
0
A14
X
A13
A12
X
X
Address Range (in hexadecimal)
Sector Size
(Kbytes/
Kwords)
Byte Mode (x8)
Word Mode (x16)
64/32
000000 - 00FFFF
00000 - 07FFF
SA1
0
0
0
0
1
X
X
X
64/32
010000 - 01FFFF
08000 - 0FFFF
SA2
0
0
0
1
0
X
X
X
64/32
020000 - 02FFFF
10000 - 17FFF
SA3
0
0
0
1
1
X
X
X
64/32
030000 - 03FFFF
18000 - 1FFFF
SA4
0
0
1
0
0
X
X
X
64/32
040000 - 04FFFF
20000 - 27FFF
SA5
0
0
1
0
1
X
X
X
64/32
050000 - 05FFFF
28000 - 2FFFF
SA6
0
0
1
1
0
X
X
X
64/32
060000 - 06FFFF
30000 - 37FFF
SA7
0
0
1
1
1
X
X
X
64/32
070000 - 07FFFF
38000 - 3FFFF
SA8
0
1
0
0
0
X
X
X
64/32
080000 - 08FFFF
40000 - 47FFF
SA9
0
1
0
0
1
X
X
X
64/32
090000 - 09FFFF
48000 - 4FFFF
SA10
0
1
0
1
0
X
X
X
64/32
0A0000 - 0AFFFF
50000 - 57FFF
SA11
0
1
0
1
1
X
X
X
64/32
0B0000 - 0BFFFF
58000 - 5FFFF
SA12
0
1
1
0
0
X
X
X
64/32
0C0000 - 0CFFFF
60000 - 67FFF
SA13
0
1
1
0
1
X
X
X
64/32
0D0000 - 0DFFFF
68000 - 6FFFF
SA14
0
1
1
1
0
X
X
X
64/32
0E0000 - 0EFFFF
70000 - 77FFF
SA15
0
1
1
1
1
X
X
X
64/32
0F0000 - 0FFFFF
78000 - 7FFFF
SA16
1
0
0
0
0
X
X
X
64/32
100000 - 10FFFF
80000 - 87FFF
SA17
1
0
0
0
1
X
X
X
64/32
110000 - 11FFFF
88000 - 8FFFF
SA18
1
0
0
1
0
X
X
X
64/32
120000 - 12FFFF
90000 - 97FFF
SA19
1
0
0
1
1
X
X
X
64/32
130000 - 13FFFF
98000 - 9FFFF
SA20
1
0
1
0
0
X
X
X
64/32
140000 - 14FFFF
A0000 - A7FFF
SA21
1
0
1
0
1
X
X
X
64/32
150000 - 15FFFF
A8000 - AFFFF
SA22
1
0
1
1
0
X
X
X
64/32
160000 - 16FFFF
B0000 - B7FFF
SA23
1
0
1
1
1
X
X
X
64/32
170000 - 17FFFF
B8000 - BFFFF
SA24
1
1
0
0
0
X
X
X
64/32
180000 - 18FFFF
C0000 - C7FFF
SA25
1
1
0
0
1
X
X
X
64/32
190000 - 19FFFF
C8000 - CFFFF
SA26
1
1
0
1
0
X
X
X
64/32
1A0000 - 1AFFFF
D0000 - D7FFF
SA27
1
1
0
1
1
X
X
X
64/32
1B0000 - 1BFFFF
D8000 - DFFFF
SA28
1
1
1
0
0
X
X
X
64/32
1C0000 - 1CFFFF
E0000 - E7FFF
SA29
1
1
1
0
1
X
X
X
64/32
1D0000 - 1DFFFF
E8000 - EFFFF
SA30
1
1
1
1
0
X
X
X
64/32
1E0000 - 1EFFFF
F0000 - F7FFF
SA31
1
1
1
1
1
0
X
X
32/16
1F0000 - 1F7FFF
F8000 - FBFFF
SA32
1
1
1
1
1
1
0
0
8/4
1F8000 - 1F9FFF
FC000 - FCFFF
SA33
1
1
1
1
1
1
0
1
8/4
1FA000 - 1FBFFF
FD000 - FDFFF
SA34
1
1
1
1
1
1
1
X
16/8
1FC000 - 1FFFFF
FE000 - FFFFF
Note:
Address range is A19 : A-1 in byte mode and A19 : A0 in word mode. See “Word/Byte Configuration” section.
(November, 2010, Version 0.3)
7
AMIC Technology, Corp.
A29160 Series
Table 3. A29160 Bottom Boot Block Sector Address Table
Sector
A19
A18
A17
A16
A15
A14
A13
A12
Address Range (in hexadecimal)
Sector Size
(Kbytes/
Kwords)
Byte Mode (x8)
Word Mode (x16)
SA0
0
0
0
0
0
0
0
X
16/8
000000 - 003FFF
00000 - 01FFF
SA1
0
0
0
0
0
0
1
0
8/4
004000 - 005FFF
02000 - 02FFF
SA2
0
0
0
0
0
0
1
1
8/4
006000 - 007FFF
03000 - 03FFF
SA3
0
0
0
0
0
1
X
X
32/16
008000 - 00FFFF
04000 - 07FFF
SA4
0
0
0
0
1
X
X
X
64/32
010000 - 01FFFF
08000 - 0FFFF
SA5
0
0
0
1
0
X
X
X
64/32
020000 - 02FFFF
10000 - 17FFF
SA6
0
0
0
1
1
X
X
X
64/32
030000 - 03FFFF
18000 - 1FFFF
SA7
0
0
1
0
0
X
X
X
64/32
040000 - 04FFFF
20000 - 27FFF
SA8
0
0
1
0
1
X
X
X
64/32
050000 - 05FFFF
28000 - 2FFFF
SA9
0
0
1
1
0
X
X
X
64/32
060000 - 06FFFF
30000 - 37FFF
SA10
0
0
1
1
1
X
X
X
64/32
070000 - 07FFFF
38000 - 3FFFF
SA11
0
1
0
0
0
X
X
X
64/32
080000 - 08FFFF
40000 - 47FFF
SA12
0
1
0
0
1
X
X
X
64/32
090000 - 09FFFF
48000 - 4FFFF
SA13
0
1
0
1
0
X
X
X
64/32
0A0000 - 0AFFFF
50000 - 57FFF
SA14
0
1
0
1
1
X
X
X
64/32
0B0000 - 0BFFFF
58000 - 5FFFF
SA15
0
1
1
0
0
X
X
X
64/32
0C0000 - 0CFFFF
60000 - 67FFF
SA16
0
1
1
0
1
X
X
X
64/32
0D0000 - 0DFFFF
68000 - 6FFFF
SA17
0
1
1
1
0
X
X
X
64/32
0E0000 - 0EFFFF
70000 - 77FFF
SA18
0
1
1
1
1
X
X
X
64/32
0F0000 - 0FFFFF
78000 - 7FFFF
SA19
1
0
0
0
0
X
X
X
64/32
100000 - 10FFFF
80000 - 87FFF
SA20
1
0
0
0
1
X
X
X
64/32
110000 - 11FFFF
88000 - 8FFFF
SA21
1
0
0
1
0
X
X
X
64/32
120000 - 12FFFF
90000 - 97FFF
SA22
1
0
0
1
1
X
X
X
64/32
130000 - 13FFFF
98000 - 9FFFF
SA23
1
0
1
0
0
X
X
X
64/32
140000 - 14FFFF
A0000 - A7FFF
SA24
1
0
1
0
1
X
X
X
64/32
150000 - 15FFFF
A8000 - AFFFF
SA25
1
0
1
1
0
X
X
X
64/32
160000 - 16FFFF
B0000 – B7FFF
SA26
1
0
1
1
1
X
X
X
64/32
170000 - 17FFFF
B8000 - BFFFF
SA27
1
1
0
0
0
X
X
X
64/32
180000 - 18FFFF
C0000 - C7FFF
SA28
1
1
0
0
1
X
X
X
64/32
190000 - 19FFFF
C8000 - CFFFF
SA29
1
1
0
1
0
X
X
X
64/32
1A0000 - 1AFFFF
D0000 - D7FFF
SA30
1
1
0
1
1
X
X
X
64/32
1B0000 - 1BFFFF
D8000 - DFFFF
SA31
1
1
1
0
0
X
X
X
64/32
1C0000 - 1CFFFF
E0000 - E7FFF
SA32
1
1
1
0
1
X
X
X
64/32
1D0000 - 1DFFFF
E8000 - EFFFF
SA33
1
1
1
1
0
X
X
X
64/32
1E0000 - 1EFFFF
F0000 - F7FFF
SA34
1
1
1
1
1
X
X
X
64/32
1F0000 - 1FFFFF
F8000 - FFFFF
Note:
Address range is A19 : A-1 in byte mode and A19 : A0 in word mode. See “Word/Byte Configuration” section.
(November, 2010, Version 0.3)
8
AMIC Technology, Corp.
A29160 Series
Autoselect Mode
appropriate highest order address bits. Refer to the
corresponding Sector Address Tables. The Command
Definitions table shows the remaining address bits that are
don't care. When all necessary bits have been set as
required, the programming equipment may then read the
corresponding identifier code on I/O7 - I/O0.To access the
autoselect codes in-system, the host system can issue the
autoselect command via the command register, as shown in
the Command Definitions table. This method does not
require VID. See "Command Definitions" for details on using
the autoselect mode.
The autoselect mode provides manufacturer and device
identification, and sector protection verification, through
identifier codes output on I/O7 - I/O0. This mode is primarily
intended for programming equipment to automatically match
a device to be programmed with its corresponding
programming algorithm. However, the autoselect codes can
also be accessed in-system through the command register.
When using programming equipment, the autoselect mode
requires VID (9.5V to 11.5 V) on address pin A9. Address
pins A6, A1, and A0 must be as shown in Autoselect Codes
(High Voltage Method) table. In addition, when verifying
sector protection, the sector address must appear on the
Table 4. A29160 Autoselect Codes (High Voltage Method)
Description
Mode
Manufacturer ID: AMIC
Device ID: A29160
Word
(Top Boot Block)
Byte
Device ID: A29160
Word
(Bottom Boot Block)
CE
OE
WE
A19
to
A12
A11
to
A10
A9
A8
to
A7
A6
A5
to
A2
A1
A0
I/O8
to
I/O15
I/O7
to
I/O0
L
L
H
X
X
VID
X
L
X
L
L
X
37h
22h
D2h
X
D2h
22h
D8h
X
D8h
X
7Fh
X
01h
(protected)
X
00h
(unprotected)
L
L
H
X
X
VID
X
L
X
L
H
L
L
H
X
X
VID
X
L
X
L
H
Byte
Continuation ID
L
L
H
X
X
VID
X
L
X
H
H
Sector Protection Verification
L
L
H
SA
X
VID
X
L
X
H
L
L=Logic Low= VIL, H=Logic High=VIH, SA=Sector Address, X=Don’t Care.
Note: The autoselect codes may also be accessed in-system via command sequences.
(November, 2010, Version 0.3)
9
AMIC Technology, Corp.
A29160 Series
Sector Protection/Unprotection
Write Pulse "Glitch" Protection
The hardware sector protection feature disables both
program and erase operations in any sector. The hardware
sector unprotection feature re-enables both program and
erase operations in previously protected sectors.
It is possible to determine whether a sector is protected or
unprotected. See “Autoselect Mode” for details.
Sector protection / unprotection can be implemented via two
methods. The primary method requires VID on the RESET pin
only, and can be implemented either in-system or via
programming equipment. Figure 2 shows the algorithm and
the Sector Protect / Unprotect Timing Diagram illustrates the
timing waveforms for this feature. This method uses standard
microprocessor bus cycle timing. For sector unprotect, all
unprotected sectors must first be protected prior to the first
sector unprotect write cycle. The alternate method must be
implemented using programming equipment. The procedure
requires a high voltage (VID) on address pin A9 and the
control pins.
The device is shipped with all sectors unprotected.
It is possible to determine whether a sector is protected or
unprotected. See "Autoselect Mode" for details.
Noise pulses of less than 5ns (typical) on OE , CE or WE
do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE =VIL,
CE = VIH or WE = VIH. To initiate a write cycle, CE and
WE must be a logical zero while OE is a logical one.
Power-Up Write Inhibit
If WE = CE = VIL and OE = VIH during power up, the
device does not accept commands on the rising edge of
WE . The internal state machine is automatically reset to
reading array data on the initial power-up.
Temporary Sector Unprotect
This feature allows temporary unprotection of previous
protected sectors to change data in-system. The Sector
Unprotect mode is activated by setting the RESET pin to VID.
During this mode, formerly protected sectors can be
programmed or erased by selecting the sector addresses.
Once VID is removed from the RESET pin, all the previously
protected sectors are protected again. Figure 1 shows the
algorithm, and the Temporary Sector Unprotect diagram
shows the timing waveforms, for this feature.
Hardware Data Protection
The requirement of command unlocking sequence for
programming or erasing provides data protection against
inadvertent writes (refer to the Command Definitions table).
In addition, the following hardware data protection measures
prevent accidental erasure or programming, which might
otherwise be caused by spurious system level signals during
VCC power-up transitions, or from system noise. The device
is powered up to read array data to avoid accidentally writing
data to the array.
START
Write Protect ( WP )
The Write Protect function provides a hardware method of
protecting the 16Kbytes of boot sector from erasure without
using VID.
If the system asserts VIL on the WP pin, the device disables
erase function for the 16Kbyte boot sector (SA34 for the top
boot device and SA0 for the bottom boot device)
independently of whether those sectors were protected or
unprotected using the method described in Sector
Protection/Unprotection.
If the system asserts VIH on the WP pin, the device reverts to
whether the 16Kbyte boot sector was previously set to
protect or unprotected using the method described in Sector
Protection/Unprotection.
RESET = VID
(Note 1)
Perform Erase or
Program Operations
RESET = VIH
Low VCC Write Inhibit
When VCC is lower than VLKO, the device does not accept
any write cycles. This protects data during VCC power up
and power down. The command register and all internal
program/erase circuits are disabled, and the device resets.
Subsequent writes are ignored until VCC is greater than
VLKO. The system must provide the proper signals to the
control pins to prevent unintentional writes when VCC is
greater than VLKO.
Temporary Sector
Unprotect
Completed (Note 2)
Notes:
1. All protected sectors unprotected.
2. All previously protected sectors are protected once again.
Figure 1. Temporary Sector Unprotect Operation
(November, 2010, Version 0.3)
10
AMIC Technology, Corp.
A29160 Series
START
START
Protect all sectors:
The indicated portion of
the sector protect
algorithm must be
performed for all
unprotected sectors prior
to issuing the first sector
unprotect address
PLSCNT=1
RESET=V ID
Wait 1 us
No
Temporary Sector
Unprotect Mode
PLSCNT=1
RESET=V ID
Wait 1 us
No
First Write
Cycle=60h?
First Write
Cycle=60h?
All sectors
protected?
Sector Protec:
Write 60h to sector
address with A6=0,
A1=1, A0=0
Yes
Set up first sector
address
Sector Unprotect:
Write 60h to sector
address with A6=1,
A1=1, A0=0
Wait 150 us
Increment
PLSCNT
Temporary Sector
Unprotect Mode
Yes
Yes
Set up sector
address
Verify Sector
Protect: Write 40h
to sector address
with A6=0, A1=1,
A0=0
No
Reset
PLSCNT=1
Wait 15 ms
Read from
sector address
with A6=0,
A1=1, A0=0
Verify Sector
Unprotect : Write
40h to sector
address with A6=1,
A1=1, A0=0
Increment
PLSCNT
No
PLSCNT
=25?
No
Read from sector
address with A6=1,
A1=1, A0=0
Data=01h?
No
Device failed
Protect another
sector?
PLSCNT=
1000?
Yes
No
Remove V ID
from RESET
Device failed
Write reset
command
Sector Protect
complete
Data=00h?
Yes
Yes
No
Sector Protect
Algorithm
Set up
next sector
address
Yes
Yes
Last sector
verified?
No
Yes
Remove V ID
from RESET
Sector Unprotect
Algorithm
Write reset
Command
Sector Unprotect
complete
Figure 2. In-System Sector Protect/Unprotect Algorithms
(November, 2010, Version 0.3)
11
AMIC Technology, Corp.
A29160 Series
Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines
device and host system software interrogation handshake,
which allows specific vendor-specified software algorithms to
be used for entire families of devices. Software support can
then be device-independent, JEDEC ID-independent, and
forward- and backward-compatible for the specified flash
device families. Flash vendors can standardize their existing
interface for long-term compatibility.
This device enters the CFI Query mode when the system
writes the CFI Query command, 98h, to address 55h in word
mode (or address AAh in byte mode), any time the device is
ready to read array data. The system can read CFI
information at the addresses given in Table 5-8. In word
mode, the upper address bits (A7-MSB) must be all zeros.
To terminate reading CFI data, the system must write the
reset command.
The system can also write the CFI query command when the
device is in the autoselect mode. The device enters the CFI
query mode, and the system can read CFI data at the
addresses given in Table 5-8. The system must write the
reset command to return the device to the autoselect mode.
Table 5. CFI Query Identification String
Addresses
Addresses
(Word Mode)
(Byte Mode)
10h
20h
0051h
11h
22h
0052h
12h
24h
0059h
13h
26h
0002h
14h
28h
0000h
15h
2Ah
0040h
16h
2Ch
0000h
17h
2Eh
0000h
18h
30h
0000h
19h
32h
0000h
1Ah
34h
0000h
Data
Description
Query Unique ASCII string “QRY”
Primary OEM Command Set
Address for Primary Extended Table
Alternate OEM Command Set (00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
Table 6. System Interface String
Addresses
Addresses
(Word Mode)
(Byte Mode)
1Bh
36h
Data
0045h
Description
VCC Min. (write/erase)
I/O7- I/O4 : volt, I/O3- I/O0: 100 millivolt
1Ch
38h
0055h
VCC Max. (write/erase)
I/O7- I/O4: volt, I/O3- I/O0: 100 millivolt
1Dh
3Ah
0000h
Vpp Min. voltage (00h = no Vpp pin present)
1Eh
3Ch
0000h
Vpp Max. voltage (00h = no Vpp pin present)
1Fh
3Eh
0004h
Typical timeout per single byte/word write 2N μs
20h
40h
0000h
Typical timeout for Min. size buffer write 2N μs (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2N ms
22h
44h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
46h
0005h
Max. timeout for byte/word write 2N times typical
24h
48h
0000h
Max. timeout for buffer write 2N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2N times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
(November, 2010, Version 0.3)
12
AMIC Technology, Corp.
A29160 Series
Table 7. Device Geometry Definition
Addresses
Addresses
(Word Mode)
(Byte Mode)
27h
4Eh
0015h
28h
50h
0002h
29h
52h
0000h
2Ah
54h
0000h
Max. number of byte in multi-byte write = 2N
2Bh
56h
0000h
(00h = not supported)
2Ch
58h
0004h
Number of Erase Block Regions within device
2Dh
5Ah
0000h
2Eh
5Ch
0000h
Erase Block Region 1 Information
2Fh
5Eh
0040h
(refer to the CFI specification)
30h
60h
0000h
31h
62h
0001h
32h
64h
0000h
33h
66h
0020h
34h
68h
0000h
35h
6Ah
0000h
36h
6Ch
0000h
37h
6Eh
0080h
38h
40h
0000h
Data
39h
72h
001Eh
3Ah
74h
0000h
3BH
76h
0000h
3Ch
78h
0001h
(November, 2010, Version 0.3)
Description
Device Size = 2N byte
Flash Device Interface Description
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
13
AMIC Technology, Corp.
A29160 Series
Table 8. Primary Vendor-Specific Extended Query
Addresses
Addresses
(Word Mode)
(Byte Mode)
40h
80h
0050h
41h
82h
0052h
42h
84h
0049h
43h
86h
0031h
Major version number, ASCII
44h
88h
0031h
Minor version number, ASCII
45h
8Ah
0000h
Address Sensitive Unlock
Data
Description
Query-unique ASCII string “PRI”
0 = Required, 1 = Not Required
46h
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
8Eh
0001h
48h
90h
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
92h
0004h
Sector Protect/Unprotect scheme
01 = 29F040 mode, 02 = 29F016 mode,
03 = 29F400 mode, 04 = 29L160 mode
4Ah
94h
0000h
Simultaneous Operation
00 = Not Supported, 01 = Supported
48h
96h
0000h
4Ch
98h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
9Ah
00h
ACC Supply Minimum
4Eh
9Ch
00h
ACC Supply Maximum
4Fh
9Eh
02h
Top/Bottom Boot Sector Flag
03h
2 = Bottom, 3 = Top
(November, 2010, Version 0.3)
14
AMIC Technology, Corp.
A29160 Series
Codes (High Voltage Method) table, which is intended for
PROM programmers and requires VID on address bit A9.
The autoselect command sequence is initiated by writing two
unlock cycles, followed by the autoselect command. The
device then enters the autoselect mode, and the system may
read at any address any number of times, without initiating
another command sequence.
A read cycle at address XX00h retrieves the manufacturer
code and another read cycle at XX11h retrieves the
continuation code. A read cycle at address XX01h returns the
device code.
A read cycle containing a sector address (SA) and the
address 02h in returns 01h if that sector is protected, or 00h if
it is unprotected. Refer to the Sector Address tables for valid
sector addresses. When a Read occurs at an address within
the 16Kbyte boot sector (SA34 for the top boot devices and
SA0 for the bottom boot devices), the input on the WP pin
Command Definitions
Writing specific address and data commands or sequences
into the command register initiates device operations. The
Command Definitions table defines the valid register
command sequences. Writing incorrect address and data
values or writing them in the improper sequence resets the
device to reading array data.
All addresses are latched on the falling edge of WE or CE ,
whichever happens later. All data is latched on the rising
edge of WE or CE , whichever happens first. Refer to the
appropriate timing diagrams in the "AC Characteristics"
section.
Reading Array Data
The device is automatically set to reading array data after
device power-up. No commands are required to retrieve
data. The device is also ready to read array data after
completing an Embedded Program or Embedded Erase
algorithm. After the device accepts an Erase Suspend
command, the device enters the Erase Suspend mode. The
system can read array data using the standard read timings,
except that if it reads at an address within erase-suspended
sectors, the device outputs status data. After completing a
programming operation in the Erase Suspend mode, the
system may once again read array data with the same
exception. See "Erase Suspend/Erase Resume Commands"
for more information on this mode.
The system must issue the reset command to re-enable the
device for reading array data if I/O5 goes high, or while in the
autoselect mode. See the "Reset Command" section, next.
See also "Requirements for Reading Array Data" in the
"Device Bus Operations" section for more information. The
Read Operations table provides the read parameters, and
Read Operation Timings diagram shows the timing diagram.
may determine what code is returned.
Input
Autoselect
Code
Protected
Protected
Unprotected
Unprotected
VIH
VIL
VIH
VIL
01 (Protected)
01 (Protected)
00 (Unprotected)
01 (Protected)1
WP
Note 1. Sector is protected from erasure. Programming within
the sector is still permitted.
The system must write the reset command to exit the
autoselect mode and return to reading array data.
Word/Byte Program Command Sequence
Reset Command
Writing the reset command to the device resets the device to
reading array data. Address bits are don't care for this
command. The reset command may be written between the
sequence cycles in an erase command sequence before
erasing begins. This resets the device to reading array data.
Once erasure begins, however, the device ignores reset
commands until the operation is complete.
The reset command may be written between the sequence
cycles in a program command sequence before
programming begins. This resets the device to reading array
data (also applies to programming in Erase Suspend mode).
Once programming begins, however, the device ignores
reset commands until the operation is complete.
The reset command may be written between the sequence
cycles in an autoselect command sequence. Once in the
autoselect mode, the reset command must be written to
return to reading array data (also applies to autoselect during
Erase Suspend).
If I/O5 goes high during a program or erase operation, writing
the reset command returns the device to reading array data
(also applies during Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host system to
access the manufacturer and devices codes, and determine
whether or not a sector is protected. The Command
Definitions table shows the address and data requirements.
This method is an alternative to that shown in the Autoselect
(November, 2010, Version 0.3)
16Kbyte Sector
Protection
15
The system may program the device by word or byte,
depending on the state of the BYTE pin. Programming is a
four-bus-cycle operation. The program command sequence is
initiated by writing two unlock write cycles, followed by the
program set-up command. The program address and data are
written next, which in turn initiate the Embedded Program
algorithm. The system is not required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verify the
programmed cell margin. Table 9 shows the address and data
requirements for the byte program command sequence.
When the Embedded Program algorithm is complete, the
device then returns to reading array data and addresses are
longer latched. The system can determine the status of the
program operation by using I/O7, I/O6, or RY/ BY . See “White
Operation Status” for information on these status bits.
Any commands written to the device during the Embedded
Program Algorithm are ignored. Note that a hardware reset
immediately terminates the programming operation. The Byte
Program command sequence should be reinitiated once the
device has reset to reading array data, to ensure data
integrity.
Programming is allowed in any sequence and across sector
boundaries. A bit cannot be programmed from a “0” back to a
“1”. Attempting to do so may halt the operation and set I/O5 to
“1”, or cause the Data Polling algorithm to indicate the
operation was successful. However, a succeeding read will
show that the data is still “0”. Only erase operations can
convert a “0” to a “1”.
AMIC Technology, Corp.
A29160 Series
00h. Addresses are don’t care for both cycle. The device
returns to reading array data.
Figure 3 illustrates the algorithm for the program operation.
See the Erase/Program Operations in “AC Characteristics” for
parameters, and to Program Operation Timings for timing
diagrams.
START
Chip Erase Command Sequence
Write Program
Command
Sequence
Chip erase is a six-bus-cycle operation. The chip erase
command sequence is initiated by writing two unlock cycles,
followed by a set-up command. Two additional unlock write
cycles are then followed by the chip erase command, which
in turn invokes the Embedded Erase algorithm. The device
does not require the system to preprogram prior to erase. The
Embedded Erase algorithm automatically preprograms and
verifies the entire memory for an all zero data pattern prior to
electrical erase. The system is not required to provide any
controls or timings during these operations. The Command
Definitions table shows the address and data requirements
for the chip erase command sequence.
Any commands written to the chip during the Embedded
Erase algorithm are ignored. The system can determine the
status of the erase operation by using I/O7, I/O6, or I/O2. See
"Write Operation Status" for information on these status bits.
When the Embedded Erase algorithm is complete, the device
returns to reading array data and addresses are no longer
latched.
Figure 4 illustrates the algorithm for the erase operation. See
the Erase/Program Operations tables in "AC Characteristics"
for parameters, and to the Chip/Sector Erase Operation
Timings for timing waveforms.
Data Poll
from System
Embedded
Program
algorithm in
progress
Verify Data ?
No
Yes
Increment Address
No
Last Address ?
Yes
Sector Erase Command Sequence
Programming
Completed
Sector erase is a six-bus-cycle operation. The sector erase
command sequence is initiated by writing two unlock cycles,
followed by a set-up command. Two additional unlock write
cycles are then followed by the address of the sector to be
erased, and the sector erase command. The Command
Definitions table shows the address and data requirements
for the sector erase command sequence.
The device does not require the system to preprogram the
memory prior to erase. The Embedded Erase algorithm
automatically programs and verifies the sector for an all zero
data pattern prior to electrical erase. The system is not
required to provide any controls or timings during these
operations.
After the command sequence is written, a sector erase timeout of 50μs begins. During the time-out period, additional
sector addresses and sector erase commands may be
written. Loading the sector erase buffer may be done in any
sequence, and the number of sectors may be from one sector
to all sectors. The time between these additional cycles must
be less than 50μs, otherwise the last address and command
might not be accepted, and erasure may begin. It is
recommended that processor interrupts be disabled during
this time to ensure all commands are accepted. The
interrupts can be re-enabled after the last Sector Erase
command is written. If the time between additional sector
erase commands can be assumed to be less than 50μs, the
system need not monitor I/O3. Any command other than
Sector Erase or Erase Suspend during the time-out period
resets the device to reading array data. The system must
rewrite the command sequence and any additional sector
addresses and commands.
Note : See the appropriate Command Definitions table for
program command sequence.
Figure 3. Program Operation
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program
bytes or words to the device faster than using the standard
program command sequence. The unlock bypass command
sequence is initiated by first writing two unlock cycles. This is
followed by a third write cycle containing the unlock bypass
command, 20h. The device then enters the unlock bypass
mode. A two-cycle unlock bypass program command
sequence is all that is required to program in this mode. The
first cycle in this sequence contains the unlock bypass
program command, A0h; the second cycle contains the
program address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial two
unlock cycles required in the standard program command
sequence, resulting in faster total programming time. Table 9
shows the requirements for the command sequence.
During the unlock bypass mode, only the Unlock Bypass
Program and Unlock Bypass Reset commands are valid. To
exit the unlock bypass mode, the system must issue the twocycle unlock bypass reset command sequence. The first
cycle must contain the data 90h; the second cycle the data
(November, 2010, Version 0.3)
16
AMIC Technology, Corp.
A29160 Series
The system can monitor I/O3 to determine if the sector erase
timer has timed out. (See the " I/O3: Sector Erase Timer"
section.) The time-out begins from the rising edge of the final
WE pulse in the command sequence.
Once the sector erase operation has begun, only the Erase
Suspend command is valid. All other commands are ignored.
When the Embedded Erase algorithm is complete, the device
returns to reading array data and addresses are no longer
latched. The system can determine the status of the erase
operation by using I/O7, I/O6, or I/O2. Refer to "Write
Operation Status" for information on these status bits.
Figure 4 illustrates the algorithm for the erase operation.
Refer to the Erase/Program Operations tables in the "AC
Characteristics" section for parameters, and to the Sector
Erase Operations Timing diagram for timing waveforms.
The system must write the Erase Resume command
(address bits are "don't care") to exit the erase suspend
mode and continue the sector erase operation. Further writes
of the Resume command are ignored. Another Erase
Suspend command can be written after the device has
resumed erasing.
START
Write Erase
Command
Sequence
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to interrupt
a sector erase operation and then read data from, or
program data to, any sector not selected for erasure. This
command is valid only during the sector erase operation,
including the 50μs time-out period during the sector erase
command sequence. The Erase Suspend command is
ignored if written during the chip erase operation or
Embedded Program algorithm. Writing the Erase Suspend
command during the Sector Erase time-out immediately
terminates the time-out period and suspends the erase
operation. Addresses are "don't cares" when writing the
Erase Suspend command.
When the Erase Suspend command is written during a
sector erase operation, the device requires a maximum of
20μs to suspend the erase operation. However, when the
Erase Suspend command is written during the sector erase
time-out, the device immediately terminates the time-out
period and suspends the erase operation.
After the erase operation has been suspended, the system
can read array data from or program data to any sector not
selected for erasure. (The device "erase suspends" all
sectors selected for erasure.) Normal read and write timings
and command definitions apply. Reading at any address
within erase-suspended sectors produces status data on I/O7
- I/O0. The system can use I/O7, or I/O6 and I/O2 together, to
determine if a sector is actively erasing or is erasesuspended. See "Write Operation Status" for information on
these status bits.
After an erase-suspended program operation is complete,
the system can once again read array data within nonsuspended sectors. The system can determine the status of
the program operation using the I/O7 or I/O6 status bits, just
as in the standard program operation. See "Write Operation
Status" for more information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend mode.
The device allows reading autoselect codes even at
addresses within erasing sectors, since the codes are not
stored in the memory array. When the device exits the
autoselect mode, the device reverts to the Erase Suspend
mode, and is ready for another valid operation. See
"Autoselect Command Sequence" for more information.
(November, 2010, Version 0.3)
Data Poll
from System
Embedded
Erase
algorithm in
progress
No
Data = FFh ?
Yes
Erasure Completed
Note :
1. See the appropriate Command Definitions table for erase
command sequences.
2. See "I/O 3 : Sector Erase Timer" for more information.
Figure 4. Erase Operation
17
AMIC Technology, Corp.
A29160 Series
Table 9. A29160 Command Definitions
Autoselect (Note 8)
Manufacturer ID
Device ID,
Top Boot Block
Device ID,
Bottom Boot Block
Continuation ID
Sector Protect Verify
(Note 9)
Cycles
Command
Sequence
(Note 1)
Read (Note 6)
Reset (Note 7)
1
1
Word
Byte
Word
Byte
Word
Byte
Word
Byte
4
4
4
4
Word
Bus Cycles (Notes 2 - 5)
Addr
RA
XXX
555
AAA
555
AAA
555
AAA
555
AAA
First
Data
RD
F0
4
Word
Byte
Word
Program
Byte
Word
Unlock Bypass
Byte
Unlock Bypass Program (Note
11)
Unlock Bypass Reset (Note 12)
Word
Chip Erase
Byte
Word
Sector Erase
Byte
Erase Suspend (Note 13)
Erase Resume (Note 14)
AA
AA
AA
555
Byte
CFI Query (Note 10)
AA
4
3
2
2
6
6
1
1
Third
Fourth
Fifth
Addr Data Addr Data Addr Data
2AA
555
2AA
555
2AA
555
2AA
555
555
AAA
555
AAA
555
AAA
555
AAA
AA
55
AA
555
AAA
555
AAA
XXX
55
55
55
55
2AA
AAA
1
Second
Addr Data
90
90
90
90
55
X01 22D2
X02 A8
X01 22D8
X02
29
X03
7F
X06
90
A0
PA
PD
555
AAA
555
AAA
AA
AAA
Sixth
Data
37
(SA) XX00
X02 XX01
00
(SA)
X04
01
555
555
X00
Addr
98
AA
AA
A0
XXX 90
555
AA
AAA
555
AA
AAA
XXX B0
XXX 30
2AA
555
2AA
555
PA
XXX
2AA
555
2AA
555
55
55
555
AAA
555
AAA
20
PD
00
55
55
555
AAA
555
AAA
80
80
AA
2AA
555
2AA
555
55
55
555
AAA
SA
10
30
Legend:
X = Don't care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE or CE pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of WE or CE pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A19 - A12 select a unique sector.
Note:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus cycles are write operation.
4. Address bits A19 - A11 are don't cares for unlock and command cycles, unless SA or PA required.
5. No unlock or command cycles required when reading array data.
6. The Reset command is required to return to reading array data when device is in the autoselect mode, or if I/O5 goes high
(while the device is providing status data).
7. The fourth cycle of the autoselect command sequence is a read cycle.
8. The data is 00h for an unprotected sector and 01h for a protected sector. See "Autoselect Command Sequence" for more
information.
9. The data is 00h for an unprotected sector and 01h for a protected sector. See “Autoselect Command Sequence” for more
information.
10. Command is valid when device is ready to read array data or when device is in autoselect mode.
11. The Unlock Bypass command is required prior to the Unlock Bypass Program command.
12. The Unlock Bypass Reset command is required to return to reading array data when the device is in the unlock bypass
mode.
13. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode.
14. The Erase Resume command is valid only during the Erase Suspend mode.
(November, 2010, Version 0.3)
18
AMIC Technology, Corp.
A29160 Series
Write Operation Status
Several bits, I/O2, I/O3, I/O5, I/O6, I/O7, RY/ BY are provided in
the A29160 to determine the status of a write operation.
Table 10 and the following subsections describe the
functions of these status bits. I/O7, I/O6 and RY/ BY each
offer a method for determining whether a program or erase
operation is complete or in progress. These three bits are
discussed first.
START
Read I/O7-I/O0
Address = VA
I/O7: Data Polling
The Data Polling bit, I/O7, indicates to the host system
whether an Embedded Algorithm is in progress or completed,
or whether the device is in Erase Suspend. Data Polling is
Yes
I/O7 = Data ?
valid after the rising edge of the final WE pulse in the
program or erase command sequence.
During the Embedded Program algorithm, the device outputs
on I/O7 the complement of the datum programmed to I/O7.
This I/O7 status also applies to programming during Erase
Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to I/O7.
The system must provide the program address to read valid
status information on I/O7. If a program address falls within a
protected sector, Data Polling on I/O7 is active for
approximately 2μs, then the device returns to reading array
data.
During the Embedded Erase algorithm, Data Polling
produces a "0" on I/O7. When the Embedded Erase algorithm
is complete, or if the device enters the Erase Suspend mode,
Data Polling produces a "1" on I/O7.This is analogous to the
complement/true datum output described for the Embedded
Program algorithm: the erase function changes all the bits in
a sector to "1"; prior to this, the device outputs the
"complement," or "0." The system must provide an address
within any of the sectors selected for erasure to read valid
status information on I/O7.
After an erase command sequence is written, if all sectors
selected for erasing are protected, Data Polling on I/O7 is
active for approximately 100μs, then the device returns to
reading array data. If not all selected sectors are protected,
the Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are protected.
When the system detects I/O7 has changed from the
complement to true data, it can read valid data at I/O7 - I/O0
on the following read cycles. This is because I/O7 may
change asynchronously with I/O0 - I/O6 while Output Enable
( OE ) is asserted low. The Data Polling Timings (During
Embedded Algorithms) figure in the "AC Characteristics"
section illustrates this. Table 10 shows the outputs for Data
No
No
I/O5 = 1?
Yes
Read I/O7 - I/O0
Address = VA
Yes
I/O7 = Data ?
No
FAIL
Note :
1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within any
sector selected for erasure. During chip erase, a valid
address is any non-protected sector address.
2. I/O7 should be rechecked even if I/O5 = "1" because
I/O7 may change simultaneously with I/O5.
Polling on I/O7. Figure 5 shows the Data Polling algorithm.
(November, 2010, Version 0.3)
PASS
Figure 5. Data Polling Algorithm
19
AMIC Technology, Corp.
A29160 Series
RY/ BY : Read/ Busy
I/O2: Toggle Bit II
The RY/ BY is a dedicated, open-drain output pin that
indicates whether an Embedded algorithm is in progress or
complete. The RY/ BY status is valid after the rising edge of
the final WE pulse in the command sequence. Since RY/ BY
is an open-drain output, several RY/ BY pins can be tied
together in parallel with a pull-up resistor to VCC. (The
RY/ BY pin is not available on the 44-pin SOP package)
If the output is low (Busy), the device is actively erasing or
programming. (This includes programming in the Erase
Suspend mode.) If the output is high (Ready), the device is
ready to read array data (including during the Erase Suspend
mode), or is in the standby mode.
Table 10 shows the outputs for RY/ BY . Refer to “ RESET
Timings”, “Timing Waveforms for Program Operation” and
“Timing Waveforms for Chip/Sector Erase Operation” for
more information.
I/O6: Toggle Bit I
Toggle Bit I on I/O6 indicates whether an Embedded Program
or Erase algorithm is in progress or complete, or whether the
device has entered the Erase Suspend mode. Toggle Bit I
may be read at any address, and is valid after the rising edge
of the final WE pulse in the command sequence (prior to the
program or erase operation), and during the sector erase
time-out.
During an Embedded Program or Erase algorithm operation,
successive read cycles to any address cause I/O6 to toggle.
(The system may use either OE or CE to control the read
cycles.) When the operation is complete, I/O6 stops toggling.
After an erase command sequence is written, if all sectors
selected for erasing are protected, I/O6 toggles for
approximately 100μs, then returns to reading array data. If not
all selected sectors are protected, the Embedded Erase
algorithm erases the unprotected sectors, and ignores the
selected sectors that are protected.
The system can use I/O6 and I/O2 together to determine
whether a sector is actively erasing or is erase-suspended.
When the device is actively erasing (that is, the Embedded
Erase algorithm is in progress), I/O6 toggles. When the device
enters the Erase Suspend mode, I/O6 stops toggling.
However, the system must also use I/O2 to determine which
sectors are erasing or erase-suspended. Alternatively, the
system can use I/O7 (see the subsection on " I/O7: Data
Polling").
If a program address falls within a protected sector, I/O6
toggles for approximately 2μs after the program command
sequence is written, then returns to reading array data.
I/O6 also toggles during the erase-suspend-program mode,
and stops toggling once the Embedded Program algorithm is
complete.
The Write Operation Status table shows the outputs for
Toggle Bit I on I/O6. Refer to Figure 6 for the toggle bit
algorithm, and to the Toggle Bit Timings figure in the "AC
Characteristics" section for the timing diagram. The I/O2 vs.
I/O6 figure shows the differences between I/O2 and I/O6 in
graphical form. See also the subsection on " I/O2: Toggle Bit
II".
(November, 2010, Version 0.3)
20
The "Toggle Bit II" on I/O2, when used with I/O6, indicates
whether a particular sector is actively erasing (that is, the
Embedded Erase algorithm is in progress), or whether that
sector is erase-suspended. Toggle Bit II is valid after the
rising edge of the final WE pulse in the command sequence.
I/O2 toggles when the system reads at addresses within those
sectors that have been selected for erasure. (The system may
use either OE or CE to control the read cycles.) But I/O2
cannot distinguish whether the sector is actively erasing or is
erase-suspended. I/O6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but cannot
distinguish which sectors are selected for erasure. Thus, both
status bits are required for sector and mode information.
Refer to Table 10 to compare outputs for I/O2 and I/O6.
Figure 6 shows the toggle bit algorithm in flowchart form, and
the section " I/O2: Toggle Bit II" explains the algorithm. See
also the " I/O6: Toggle Bit I" subsection. Refer to the Toggle
Bit Timings figure for the toggle bit timing diagram. The I/O2
vs. I/O6 figure shows the differences between I/O2 and I/O6 in
graphical form.
Reading Toggle Bits I/O6, I/O2
Refer to Figure 6 for the following discussion. Whenever the
system initially begins reading toggle bit status, it must read
I/O7 - I/O0 at least twice in a row to determine whether a
toggle bit is toggling. Typically, a system would note and store
the value of the toggle bit after the first read. After the second
read, the system would compare the new value of the toggle
bit with the first. If the toggle bit is not toggling, the device has
completed the program or erase operation. The system can
read array data on I/O7 - I/O0 on the following read cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also
should note whether the value of I/O5 is high (see the section
on I/O5). If it is, the system should then determine again
whether the toggle bit is toggling, since the toggle bit may
have stopped toggling just as I/O5 went high. If the toggle bit
is no longer toggling, the device has successfully completed
the program or erase operation. If it is still toggling, the device
did not complete the operation successfully, and the system
must write the reset command to return to reading array data.
The remaining scenario is that the system initially determines
that the toggle bit is toggling and I/O5 has not gone high. The
system may continue to monitor the toggle bit and I/O5
through successive read cycles, determining the status as
described in the previous paragraph. Alternatively, it may
choose to perform other system tasks. In this case, the
system must start at the beginning of the algorithm when it
returns to determine the status of the operation (top of Figure
6).
I/O5: Exceeded Timing Limits
I/O5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under these
conditions I/O5 produces a "1." This is a failure condition that
indicates the program or erase cycle was not successfully
completed.
AMIC Technology, Corp.
A29160 Series
The I/O5 failure condition may appear if the system tries to
program a "1 "to a location that is previously programmed to
"0." Only an erase operation can change a "0" back to a "1."
Under this condition, the device halts the operation, and
when the operation has exceeded the timing limits, I/O5
produces a "1."
Under both these conditions, the system must issue the reset
command to return the device to reading array data.
START
Read I/O7-I/O0
I/O3: Sector Erase Timer
After writing a sector erase command sequence, the system
may read I/O3 to determine whether or not an erase
operation has begun. (The sector erase timer does not apply
to the chip erase command.) If additional sectors are
selected for erasure, the entire time-out also applies after
each additional sector erase command. When the time-out is
complete, I/O3 switches from "0" to "1." The system may
ignore I/O3 if the system can guarantee that the time
between additional sector erase commands will always be
less than 50μs. See also the "Sector Erase Command
Sequence" section.
After the sector erase command sequence is written, the
system should read the status on I/O7 ( Data Polling) or I/O6
(Toggle Bit 1) to ensure the device has accepted the
command sequence, and then read I/O3. If I/O3 is "1", the
internally controlled erase cycle has begun; all further
commands (other than Erase Suspend) are ignored until the
erase operation is complete. If I/O3 is "0", the device will
accept additional sector erase commands. To ensure the
command has been accepted, the system software should
check the status of I/O3 prior to and following each
subsequent sector erase command. If I/O3 is high on the
second status check, the last command might not have been
accepted. Table 10 shows the outputs for I/O3.
Read I/O7-I/O0
Toggle Bit
= Toggle ?
(Note 1)
No
Yes
No
I/O5 = 1?
Yes
Read I/O7 - I/O0
Twice
Toggle Bit
= Toggle ?
(Notes 1,2)
No
Yes
Program/Erase
Operation Not
Commplete, Write
Reset Command
Program/Erase
Operation Complete
Notes :
1. Read toggle bit twice to determine whether or not it is
toggling. See text.
2. Recheck toggle bit because it may stop toggling as I/O5
changes to "1". See text.
Figure 6. Toggle Bit Algorithm
(November, 2010, Version 0.3)
21
AMIC Technology, Corp.
A29160 Series
Table 10. Write Operation Status
I/O7
Operation
I/O6
(Note 1)
Standard
Mode
Embedded Program Algorithm
Embedded Erase Algorithm
Erase
Suspend
Mode
Reading within Erase
Suspended Sector
Reading within Non-Erase
Suspend Sector
Erase-Suspend-Program
I/O5
I/O3
(Note 2)
I/O2
RY/ BY
(Note 1)
I/O7
Toggle
0
N/A
No toggle
0
0
Toggle
0
1
Toggle
0
1
No toggle
0
N/A
Toggle
1
Data
Data
Data
Data
Data
1
I/O7
Toggle
0
N/A
N/A
0
Notes:
1. I/O7 and I/O2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
2. I/O5 switches to “1” when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
See “I/O5: Exceeded Timing Limits” for more information.
Maximum Negative Input Overshoot
20ns
20ns
20ns
Maximum Positive Input Overshoot
20ns
VCC+2.0V
VCC+0.5V
2.0V
20ns
(November, 2010, Version 0.3)
20ns
22
AMIC Technology, Corp.
A29160 Series
DC Characteristics
CMOS Compatible
Parameter
Parameter Description
Symbol
ILI
Input Load Current
ILIT
ILO
A9 Input Load Current
Output Leakage Current
Test Description
Unit
±1.0
35
μA
VCC = VCC Max, A9 =11.5V
VOUT = VSS to VCC. VCC = VCC Max
±1.0
μA
VIN = VSS to VCC. VCC = VCC Max
μA
5 MHz
8
40
1 MHz
1.6
8
CE = VIL, OE = VIH
5 MHz
12
50
Word Mode
1 MHz
2.4
10
CE = VIL, OE =VIH
30
50
mA
CE = VIH, RESET = VCC ± 0.5V
0.5
5
uA
5
10
μA
Byte Mode
ICC1
Typ.
Max.
CE = VIL, OE = VIH
VCC Active Read Current
(Notes 1, 2)
Min.
mA
ICC2
VCC Active Write (Program/Erase)
Current (Notes 2, 3, 4)
ICC3
VCC Standby Current (Note 2)
ICC4
VCC Standby Current During Reset
(Note 2)
VIL
Input Low Level
-0.5
0.8
V
VIH
Input High Level
Voltage for Autoselect and
Temporary Unprotect Sector
Output Low Voltage
2.0
VCC + 0.5
V
11.5
V
0.45
V
WP = VCC or Float
VID
VOL
VOH1
VOH2
Output High Voltage
VLKO
Low VCC Lockout Voltage (Note 5)
RESET = VSS ± 0.5V
WP = VCC or Float
VCC = 5.0 V
9.5
10.5
IOL = 6.0mA, VCC = VCC Min
IOH = -2.5 mA, VCC = VCC Min
IOH = -100 μA, VCC = VCC Min
0.8 x VCC
VCC - 0.4
3.1
V
V
3.6
4.1
V
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE at VIH. Typical VCC is 5.0V.
2. Maximum ICC specifications are tested with VCC = VCC max.
3. ICC active while Embedded Algorithm (program or erase) is in progress.
4. Not 100% tested.
(November, 2010, Version 0.3)
23
AMIC Technology, Corp.
A29160 Series
DC Characteristics (continued)
Typical Word Mode Active Read Current, T=25°C
4.5V
5.0V
5.5V
30.0
Power Supply Current in mA
25.0
20.0
15.0
10.0
5.0
0.0
2
3
4
5
6
7
8
9
10
Frequency In MHz
(November, 2010, Version 0.3)
24
AMIC Technology, Corp.
A29160 Series
AC Characteristics
Read Only Operations
Description
Parameter Symbols
JEDEC
Std
tAVAV
tRC
Read Cycle Time (Note 1)
tAVQV
tACC
Address to Output Delay
tELQV
tCE
Chip Enable to Output Delay
tGLQV
tOE
Output Enable to Output Delay
tOEH
Output Enable Hold
Time (Note 1)
Test Setup
Unit
Speed
-55
-70
Min.
55
70
ns
CE = VIL
OE = VIL
Max.
55
70
ns
OE = VIL
Max.
55
70
ns
Max.
25
30
ns
Min.
0
0
ns
Min.
10
10
Read
Toggle and
Data Polling
ns
tEHQZ
tDF
Chip Enable to Output High Z
(Notes 1)
Max.
20
20
ns
tGHQZ
tDF
Output Enable to Output High Z
(Notes 1)
Max.
20
20
ns
tAXQX
tOH
Output Hold Time from Addresses,
CE or OE , Whichever Occurs First
(Note 1)
Min.
0
0
ns
Notes:
1. Not 100% tested.
2. See Test Conditions and Test Setup for test specifications.
Timing Waveforms for Read Only Operation
tRC
Addresses
Addresses Stable
tACC
CE
tDF
tOE
OE
tOEH
WE
tCE
tOH
High-Z
Output
Output Valid
High-Z
RESET
0V
RY/BY
(November, 2010, Version 0.3)
25
AMIC Technology, Corp.
A29160 Series
AC Characteristics
Hardware Reset ( RESET )
Parameter
JEDEC
Description
Test Setup
All Speed Options
Unit
Std
tREADY
RESET Pin Low (During Embedded
Algorithms) to Read or Write (See Note)
Max
20
μs
tREADY
RESET Pin Low (Not During Embedded
Algorithms) to Read or Write (See Note)
Max
500
ns
tRP
RESET Pulse Width
Min
500
ns
tRH
RESET High Time Before Read (See Note)
Min
50
ns
tRB
RY/ BY Recovery Time
Min
0
ns
tRPD
RESET Low to Standby Mode
Min
20
μs
Note: Not 100% tested.
RESET Timings
RY/BY
CE, OE
tRH
RESET
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
~
~ ~
~
tReady
RY/BY
tRB
CE, OE
~
~
RESET
tRP
(November, 2010, Version 0.3)
26
AMIC Technology, Corp.
A29160 Series
Temporary Sector Unprotect
Parameter
JEDEC
Description
All Speed Options
Unit
Std
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tRSP
RESET Setup Time for Temporary Sector
Unprotect
Min
4
μs
Note: Not 100% tested.
Temporary Sector Unprotect Timing Diagram
~
~
10.5V
0 or 5V
RESET
0 or 5V
tVIDR
tVIDR
Program or Erase Command Sequence
CE
~
~
WE
~ ~
~
~
tRSP
RY/BY
AC Characteristics
Word/Byte Configuration ( BYTE )
Parameter
JEDEC
Description
All Speed Options
Std
tELFL/tELFH
-55
Unit
-70
CE to BYTE Switching Low or High
Max
tFLQZ
BYTE Switching Low to Output High-Z
Max
25
25
ns
tHQV
BYTE Switching High to Output Active
Min
55
70
ns
(November, 2010, Version 0.3)
27
5
ns
AMIC Technology, Corp.
A29160 Series
BYTE Timings for Read Operations
CE
OE
BYTE
tELFL
BYTE
Switching
from word to
byte mode
Data Output
(I/O0-I/O14)
I/O0-I/O14
Data Output
(I/O0-I/O7)
I/O15
Output
I/O15 (A-1)
Address Input
tFLQZ
tELFH
BYTE
BYTE
Switching
from byte to
word mode
I/O0-I/O14
Data Output
(I/O0-I/O7)
I/O15 (A-1)
Address Input
Data Output
(I/O0-I/O14)
I/O15
Output
tFHQV
BYTE Timings for Write Operations
CE
The falling edge of the last WE signal
WE
BYTE
tSET
(tAS)
tHOLD(tAH)
Note:
Refer to the Erase/Program Operations table for tAS and tAH specifications.
(November, 2010, Version 0.3)
28
AMIC Technology, Corp.
A29160 Series
AC Characteristics
Erase and Program Operations
Parameter
Speed
Description
Unit
JEDEC
Std
tAVAV
tWC
Write Cycle Time (Note 1)
Min.
tAVWL
tAS
Address Setup Time
Min.
tWLAX
tAH
Address Hold Time
Min.
40
40
ns
tDVWH
tDS
Data Setup Time
Min.
30
30
ns
tWHDX
tDH
Data Hold Time
Min.
0
ns
tOES
Output Enable Setup Time
Min.
0
ns
Read Recover Time Before Write
Min.
0
ns
tGHWL
tGHWL
-55
-70
55
70
0
ns
ns
( OE high to WE low)
tELWL
tCS
CE Setup Time
Min.
0
ns
tWHEH
tCH
CE Hold Time
Min.
0
ns
tWLWH
tWP
Write Pulse Width
Min.
tWHWL
tWPH
Write Pulse Width High
Min.
20
Byte
Typ.
6
tWHWH1
tWHWH1
Word
Typ.
11
Sector Erase Operation (Note 2)
Typ.
0.7
sec
tvcs
VCC Set Up Time (Note 1)
Min.
50
μs
tRB
Recovery Time from RY/ BY
Min
0
ns
Program/Erase Valid to RY/ BY Delay
Min
tWHWH2
tWHWH2
tBUSY
Byte Programming Operation
(Note 2)
35
35
ns
ns
μs
30
30
ns
Notes:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
(November, 2010, Version 0.3)
29
AMIC Technology, Corp.
A29160 Series
Timing Waveforms for Program Operation
Program Command Sequence (last two cycles)
PA
555h
PA
tAH
PA
~
~ ~
~
Addresses
tAS
~
~
tWC
Read Status Data (last two cycles)
CE
~
~
tCH
OE
tWP
~
~
tWHWH1
WE
tCS
tWPH
A0h
Data
tDH
PD
~
~
tDS
Status
DOUT
tRB
tBUSY
~
~ ~
~
RY/BY
tVCS
VCC
Note :
1. PA = program addrss, PD = program data, Dout is the true data at the program address.
2. Illustration shows device in word mode.
(November, 2010, Version 0.3)
30
AMIC Technology, Corp.
A29160 Series
Timing Waveforms for Chip/Sector Erase Operation
Erase Command Sequence (last two cycles)
tAS
~
~
tWC
SA
2AAh
VA
555h for chip erase
tAH
VA
~
~ ~
~
Addresses
Read Status Data
~
~
CE
OE
tCH
~
~
tWP
WE
tWPH
tWHWH2
tCS
Data
tDH
55h
30h
~
~
tDS
10h for chip erase
tBUSY
In
Progress
Complete
tRB
~
~
RY/BY
~
~
tVCS
VCC
Note :
1. SA = Sector Address (for Sector Erase), VA = Valid Address for reading status data (see "Write Operaion Ststus").
2. Illustratin shows device in word mode.
(November, 2010, Version 0.3)
31
AMIC Technology, Corp.
A29160 Series
Timing Waveforms for Data Polling (During Embedded Algorithms)
~
~
tRC
Addresses
VA
tACC
CE
VA
~
~ ~
~
VA
tCE
tCH
~
~
tOE
OE
tDF
~
~
tOEH
WE
tOH
Status Data
~
~
Complement
Complement
True
Valid Data
~
~
High-Z
I/O7
Status Data
True
Valid Data
High-Z
I/O0 - I/O6
High-Z
tBUSY
~
~
RY/BY
Note : VA = Valid Address. Illustation shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
(November, 2010, Version 0.3)
32
AMIC Technology, Corp.
A29160 Series
Timing Waveforms for Toggle Bit (During Embedded Algorithms)
~
~
tRC
Addresses
VA
tACC
CE
VA
VA
~
~ ~
~
VA
tCE
tCH
tOE
~
~
OE
tDF
~
~
tOEH
WE
I/O6 , I/O2
High-Z
tBUSY
Valid Status
Valid Status
(first read)
(second read)
~
~
tOH
Valid Status
Valid Data
(stop togging)
~
~
RY/BY
Note: VA = Valid Address; not required for I/O6. Illustration shows first two status cycle after command sequence, last status
read cycle, and array data read cycle.
(November, 2010, Version 0.3)
33
AMIC Technology, Corp.
A29160 Series
Timing Waveforms for Sector Protect/Unprotect
VID
VIH
~
~
RESET
SA, A6,
A1, A0
Valid*
Valid*
~
~
Valid*
Verify
~
~
Sector Protect/Unprotect
60h
60h
40h
Status
~
~
Data
Sector Protect:150us
Sector Unprotect:15ms
1us
CE
WE
OE
Note : For sector protect, A6=0, A1=1, A0=0. For sector unprotect, A6=1, A1=1, A0=0
Timing Waveforms for I/O2 vs. I/O6
~
~
Erase
Complete
~
~
~
~
Erase
~
~
~
~
~
~
Erase Suspend
Read
~
~
~
~
~
~
I/O2
~
~
I/O6
Erase
Suspend
Program
Erase Suspend
Read
~
~
Erase
Erase
Resume
~
~
WE
Enter Erase
Suspend Program
~
~
~
~
Erase
Suspend
~
~
Enter
Embedded
Erasing
I/O2 and I/O6 toggle with OE and CE
Note : Both I/O6 and I/O2 toggle with OE or CE. See the text on I/O6 and I/O2 in the section "Write Operation Status" for
more information.
(November, 2010, Version 0.3)
34
AMIC Technology, Corp.
A29160 Series
AC Characteristics
Erase and Program Operations
Alternate CE Controlled Writes
Parameter
Description
Unit
Speed
JEDEC
Std
tAVAV
tWC
Write Cycle Time (Note 1)
Min.
tAVEL
tAS
Address Setup Time
Min.
tELAX
tAH
Address Hold Time
Min.
40
40
ns
tDVEH
tDS
Data Setup Time
Min.
30
30
ns
tEHDX
tDH
Data Hold Time
Min.
0
ns
tOES
Output Enable Setup Time
Min.
0
ns
Min.
0
ns
tGHEL
tGHEL
Read Recover Time Before Write
-55
-70
55
70
0
ns
ns
( OE High to WE Low)
tWLEL
tWS
WE Setup Time
Min.
0
ns
tEHWH
tWH
WE Hold Time
Min.
0
ns
tELEH
tCP
CE Pulse Width
Min.
tEHEL
tCPH
CE Pulse Width High
Min.
20
ns
tWHWH1
tWHWH1
μs
tWHWH2
tWHWH2
35
35
Programming Operation
Byte
Typ.
6
(Note 2)
Word
Typ.
11
Typ.
0.7
Sector Erase Operation (Note 2)
ns
sec
Notes:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
(November, 2010, Version 0.3)
35
AMIC Technology, Corp.
A29160 Series
Timing Waveforms for Alternate CE Controlled Write Operation
PA for program
SA for sector erase
555 for chip erase
Data Polling
~
~
555 for program
2AA for erase
PA
~
~
Addresses
tAS
tAH
tWH
~
~
tWC
~
~
WE
OE
tWHWH1 or 2
~
~
tCP
tBUSY
tCPH
CE
tWS
tDS
~
~
tDH
tRH
A0 for program
55 for erase
PD for program
30 for sector erase
10 for chip erase
I/O7
DOUT
~
~
Data
RESET
~
~
RY/BY
Note :
1. PA = Program Address, PD = Program Data, SA = Sector Address, I/O7 = Complement of Data Input, DOUT = Array Data.
2. Figure indicates the last two bus cycles of the command sequence.
Erase and Programming Performance
Parameter
Typ. (Note 1)
Max. (Note 2)
Unit
Sector Erase Time
0.7
3.5
sec
Chip Erase Time
22
Byte Programming Time
6
200
μs
Word Programming Time
11
360
μs
sec
Chip Programming Time
Byte Mode
13
40
sec
(Note 3)
Word Mode
12
36
sec
Comments
Excludes 00h programming
prior to erasure
Excludes system-level
overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 5.0V VCC, 10,000 cycles. Additionally, programming
typically assumes checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 4.5V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then
does the device set I/O5 = 1. See the section on I/O5 for further information.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 9
for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 100,000 cycles.
(November, 2010, Version 0.3)
36
AMIC Technology, Corp.
A29160 Series
Latch-up Characteristics
Description
Min.
Max.
-1.0V
VCC+1.0V
-100 mA
+100 mA
-1.0V
11.5V
Input Voltage with respect to VSS on all I/O pins
VCC Current
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE and RESET )
Includes all pins except VCC. Test conditions: VCC = 5.0V, one pin at time.
TSOP and SOP Pin Capacitance
Parameter Symbol
CIN
Parameter Description
Test Setup
Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
Typ.
Max.
Unit
VIN=0
6
7.5
pF
VOUT=0
8.5
12
pF
VIN=0
7.5
9
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0MHz
Data Retention
Parameter
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Minimum Pattern Data Retention Time
(November, 2010, Version 0.3)
37
AMIC Technology, Corp.
A29160 Series
Test Conditions
Test Specifications
Test Condition
-55
-70
Output Load
Unit
1 TTL gate
Output Load Capacitance, CL (including jig capacitance)
30
30
pF
Input Rise and Fall Times
5
5
ns
Input Pulse Levels
0.0 - 3.0
0.0 - 3.0
V
Input timing measurement reference levels
1.5
1.5
V
Output timing measurement reference levels
1.5
1.5
V
Test Setup
5.0 V
2.7 K Ω
Device
Under
Test
CL
(November, 2010, Version 0.3)
6.2 K Ω
38
Diodes = IN3064 or Equivalent
AMIC Technology, Corp.
A29160 Series
Part Numbering Scheme
A29 XXX X X X XX X X / X
Packing
Q = Tape & Reel
Package Material
Blank = Normal
F = PB free
Temperature*
U = - 40 °C ~ + 85 °C
I = - 25 °C ~ + 75 °C
Blank = 0°C ~ + 70 °C
Speed Grade
Package Type
M = 44-pin SOP
V = 48-pin TSOP
G = 48-ball BGA
T = Top Boot
U = Bottom Boot
Device Version*
Blank = The First Version
Device Density
800 = 8Mbits (AMIC Device ID Code)
801 = 8Mbits (Spansion Device ID Code)
160 = 16Mbits
Device Type
A29 = AMIC 5V Single Bank
Parallel NOR Flash
* Optional
(November, 2010, Version 0.3)
39
AMIC Technology, Corp.
A29160 Series
Ordering Information
Top Boot Sector Flash
Part No.
Access Time
(ns)
Active Read
Current
Typ. (mA)
Program/Erase
Current
Typ. (mA)
Standby Current
Typ. (μA)
Package
A29160TM-55F
44 Pin Pb-Free SOP
A29160TM-55UF
44 Pin Pb-Free SOP
A29160TV-55F
48 Pin Pb-Free TSOP
55
20
30
0.5
A29160TV-55UF
48 Pin Pb-Free TSOP
A29160TG-55F
48-ball Pb-Free TFBGA
A29160TG-55UF
48-ball Pb-Free TFBGA
A29160TM-70F
44 Pin Pb-Free SOP
A29160TM-70UF
44 Pin Pb-Free SOP
A29160TV-70F
A29160TV-70UF
48 Pin Pb-Free TSOP
70
20
30
0.5
48 Pin Pb-Free TSOP
A29160TG-70F
48-ball Pb-Free TFBGA
A29160TG-70UF
48-ball Pb-Free TFBGA
-U is for industrial operating temperature range: -40°C to +85°C.
(November, 2010, Version 0.3)
40
AMIC Technology, Corp.
A29160 Series
Ordering Information (continued)
Bottom Boot Sector Flash
Part No.
Access Time
(ns)
Active Read
Current
Typ. (mA)
Program/Erase
Current
Typ. (mA)
Standby
Current
Typ. (μA)
Package
A29160UM-55F
44 Pin Pb-Free SOP
A29160UM-55UF
44 Pin Pb-Free SOP
A29160UV-55F
48 Pin Pb-Free TSOP
55
20
30
0.5
A29160UV-55UF
48 Pin Pb-Free TSOP
A29160UG-55F
48-ball Pb-Free TFBGA
A29160UG-55UF
48-ball Pb-Free TFBGA
A29160UM-70F
44 Pin Pb-Free SOP
A29160UM-70UF
44 Pin Pb-Free SOP
A29160UV-70F
A29160UV-70UF
48 Pin Pb-Free TSOP
70
20
30
0.5
48 Pin Pb-Free TSOP
A29160UG-70F
48-ball Pb-Free TFBGA
A29160UG-70UF
48-ball Pb-Free TFBGA
-U is for industrial operating temperature range: -40°C to +85°C.
(November, 2010, Version 0.3)
41
AMIC Technology, Corp.
A29160 Series
Package Information
SOP 44L Outline Dimensions
unit: inches/mm
23
Gauge Plane
HE
E
44
θ
L
0.010"
1
b 22
Detail F
e
y
A1
D
S
A
A2
C
D
L1
Seating Plane
See Detail F
Symbol
Dimensions in inches
Dimensions in mm
Min
Nom
Max
Min
Nom
Max
A
-
-
0.118
-
-
3.00
A1
0.004
-
-
0.10
-
-
A2
0.103
0.106
0.109
2.62
2.69
2.77
b
0.013
0.016
0.020
0.33
0.40
0.50
C
0.007
0.008
0.010
0.18
0.20
0.25
D
-
1.122
1.130
-
28.50
28.70
E
0.490
0.496
0.500
12.45
12.60
12.70
e
-
0.050
-
-
1.27
-
HE
0.620
0.631
0.643
15.75
16.03
16.33
L
0.024
0.032
0.040
0.61
0.80
1.02
L1
-
0.0675
-
-
1.71
-
S
-
-
0.045
-
-
1.14
y
-
-
0.004
-
-
0.10
0°
-
0°
-
8°
θ
8°
Notes:
1. The maximum value of dimension D includes end flash.
2. Dimension E does not include resin fins.
3. Dimension S includes end flash.
(November, 2010, Version 0.3)
42
AMIC Technology, Corp.
A29160 Series
Package Information
TSOP 48L (Type I) Outline Dimensions
unit: inches/mm
1
48
24
25
y
D1
A1
A2 A
D
0.25
c
S
e
E
b
D
Detail "A"
L
θ
Detail "A"
Symbol
A
Dimensions in inches
Dimensions in mm
Min
Nom
Max
Min
Nom
Max
-
-
0.047
-
-
1.20
A1
0.002
-
0.006
0.05
-
0.15
A2
0.037
0.039
0.042
0.94
1.00
1.06
b
0.007
0.009
0.011
0.18
0.22
0.27
c
0.004
-
0.008
0.12
-
0.20
D
0.779
0.787
0.795
19.80
20.00
20.20
D1
0.720
0.724
0.728
18.30
18.40
18.50
E
-
0.472
0.476
-
12.00
12.10
e
L
0.020 BASIC
0.020
S
0.024
0.50 BASIC
0.0275
0.50
0.011 Typ.
0.60
0.70
0.28 Typ.
y
-
-
0.004
θ
0°
-
8°
0°
-
0.10
8°
Notes:
1. The maximum value of dimension D includes end flash.
2. Dimension E does not include resin fins.
3. Dimension S includes end flash.
(November, 2010, Version 0.3)
43
AMIC Technology, Corp.
A29160 Series
Package Information
48 Balls CSP (6 x 8 mm) Outline Dimensions
unit: mm
(48TFBGA)
TOP VIEW
BOTTOM VIEW
b
1 2 3 4 5 6
E
D
C
B
A
B
A
E1
D
C
e
H
G
F
H
G
F
E
E
6 5 4 3 2 1
e
D1
Ball*A1 CORNER
D
A
SIDE VIEW
SEATING PLANE
A1
C
0.10 C
Symbol
A
A1
b
D
D1
e
E
E1
(November, 2010, Version 0.3)
Dimensions in mm
Min.
0.20
0.30
5.90
Nom.
0.25
6.00
4.00 BSC
0.80
7.90
8.00
5.60 BSC
44
Max.
1.20
0.30
0.40
6.10
8.10
AMIC Technology, Corp.
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