512K x 32 SRAM MODULE PUMA 68S16000/AB-020/025/35/45 Issue 5.0 : May 2001 • User Configurable as 8 / 16 / 32 bit wide output. • Operating Power : • Standby Power : (CMOS) • Single 5V±10% Power supply. 512K x 8 SRAM 512K x 8 SRAM 512K x 8 SRAM CS1 CS2 CS3 CS4 D0~7 D8~15 D16~23 D24~31 512K x 8 SRAM VCC 2 A9 3 A10 4 A7 5 A8 CS3 6 WE A5 7 A6 A4 8 CS4 A3 9 GND A2 Pin Definition (see sheet 7 for 'A' version) A0~A18 OE WE 3.86 W (max) 220mW (max) • Fully Static operation. A1 Block Diagram (see sheet 7 for 'A' version) • JEDEC 68 'J' leaded plastic Surface Mount Substrate. • Commercial, Industrial, or Military Grade. A0 The PUMA 68S16000 is a 16Mbit CMOS High Speed Static RAM in a JEDEC 68 pin surface mount PLCC, available with access times of 20, 25, 35, and 45ns. The output width is user configurable as 8 , 16 or 32 bits using four Chip Selects (CS1~4). The device is available with the option of independant or single WE control. The plastic device is screened to ensure high reliability. The device features low power standby, multiple ground pins for maximum noise immunity and TTL compatible inputs and outputs. The PUMA 68S16000 offers a dramatic space saving advantage over four standard 512Kx8 devices. Features • Very Fast Access Times of 20,25,35,45 ns. NC Description 1 68 67 66 65 64 63 62 61 D0 10 60 D16 D1 11 59 D17 D2 12 58 D18 D3 13 57 D19 D4 14 56 D20 D5 15 55 D21 D6 16 PUMA 68S16000 54 D22 D7 17 53 D23 GND VIEW 18 52 GND D8 19 FROM 51 D24 D9 20 50 D25 D10 ABOVE 21 49 D26 D11 22 48 D27 D12 23 47 D28 D13 24 46 D29 D14 25 45 D30 D15 26 44 D31 Pin Functions Address Inputs Data Input/Output Chip Select Write Enable Output Enable No Connect Power (+5V) Ground NC A18 GND NC NC NC A17 CS2 OE CS1 A16 A15 A13 A14 A12 A11 VCC 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 A0 - A18 D0 - D31 CS1~4 WE OE NC VCC GND Package Details Plastic 68 J-Leaded JEDEC PLCC ISSUE 5.0 : May 2001 PUMA 68S16000/AB-020/025/35/45 DC OPERATING CONDITIONS Absolute Maximum Ratings (1) Parameter Symbol (2) Voltage on any pin relative to VSS Power Dissipation Storage Temperature VT PT TSTG Min Typ Max Unit -0.5 -65 - 7.0 5.0 150 V W o C Notes : (1) Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply Voltage Input High Voltage Input Low Voltage Operating Temperature (Commercial) (Industrial) (Military) Symbol Min Typ Max V CC VIH VIL TA TAI TAM 4.5 2.2 -0.3 0 -40 -55 5.0 - 5.5 VCC+0.5 0.8 70 85 125 Unit V V V o C o C (Suffix I) o C (Suffix M) DC Electrical Characteristics (VCC=5V±10%, TA = -55oC to +125oC) Parameter I/P Leakage Current Symbol Test Condition max Unit ILI 0V < VIN < VCC -20 - 20 µA ILO CS = VIH, VI/O = GND to VCC -20 - 20 µA 32-bit mode ICC32 Min. Cycle, CS = VIL, f=fMAX, IOUT = 0mA - - 720 mA 16-bit mode ICC16 As Above. - - 480 mA 8-bit mode ICC8 As Above. - - 360 mA TTL levels ISB1 CS = VIH, f=fMAX - - 240 mA CMOS levels ISB2 CS > VCC-0.2V, 0.2<VIN<VCC-0.2V, f=0 - - 40 mA VOL IOL = 8.0mA - - 0.4 V VOH IOH = -4.0mA 2.4 - - V Address,OE,WE Output Leakage Current Operating Supply Current Min Typ Standby Supply Current Output Voltage Notes : 1/ Typical values are at VCC=5.0V,TA=25oC and specified loading. 2/ CS above refers to CS1~4. 3/ At f=fMAX address and data inputs are cycling at maximum frequency. 2 PUMA 68S16000/AB-020/025/35/45 ISSUE 5.0 : May 2001 Capacitance (VCC=5V±10%,TA=25oC) Note: Capacitance calculated, not measured. Parameter Symbol Test Condition Input Capacitance (Address,OE,WE) I/P Capacitance (other) I/O Capacitance CIN1 CIN2 CI/O VIN = 0V VIN = 0V VI/O = 0V AC Test Conditions max Unit 30 7 38 pF pF pF Output Load * Input pulse levels: 0V to 3.0V I/O Pin 645Ω * Input rise and fall times: 5ns 1.76V * Input and Output timing reference levels: 1.5V 100pF * Output load: see diagram * VCC=5V±10% Operation Truth Table CS OE WE DATA PINS SUPPLY CURRENT MODE H X X High Impedance ISB1 , ISB2 , ISB3 Standby L L H Data Out ICC32 , ICC16 , ICC8 Read L H L Data In ICC32 , ICC16 , ICC8 Write L L L Data In ICC32 , ICC16 , ICC8 Write L H H High-Impedance ISB1 , ISB2 , ISB3 High-Z CS above refers to CS1~4. Notes : H = VIH : L =VIL : X = VIH or VIL 3 ISSUE 5.0 : May 2001 PUMA 68S16000/AB-020/025/35/45 AC OPERATING CONDITIONS Read Cycle -020 Parameter Read Cycle Time Address Access Time Chip Select Access Time Output Enable to Output Valid Output Hold from Address Change Chip Selection to Output in Low Z Output Enable to Output in Low Z Chip Deselection to O/P in High Z Output Disable to Output in High Z -025 -35 -45 Symbol min max min max min max min max Unit t RC tAA tACS tOE t OH tCLZ tOLZ t CHZ t OHZ 20 4 3 0 0 0 20 20 10 8 8 25 5 3 0 0 0 25 25 12 10 10 35 6 3 0 0 0 35 35 14 12 12 45 7 3 0 0 0 45 45 16 15 15 ns ns ns ns ns ns ns ns ns Write Cycle -020 Parameter Write Cycle Time Chip Selection to End of Write Address Valid to End of Write Address Setup Time Write Pulse Width Write Recovery Time Write to Output in High Z Data to Write Time Overlap Data Hold from Write Time Output active from end of write Symbol t WC t CW tAW tAS tWP t WR t WHZ t DW t DH t OW -025 -35 -45 min max min max min max min max Unit 20 15 15 0 15 0 0 9 0 4 8 - 25 20 20 0 20 0 0 10 0 5 10 - 35 25 25 0 25 0 0 12 0 7 12 - 45 35 35 0 35 0 0 14 0 9 14 - ns ns ns ns ns ns ns ns ns ns 4 PUMA 68S16000/AB-020/025/35/45 ISSUE 5.0 : May 2001 Read Cycle Timing Waveform (1,2) t RC Address t AA OE t OE t OH t OLZ CS1~4 t ACS Don't care. t OHZ (3) t CLZ (4,5) Dout Data Valid t CHZ (3,4,5) AC Read Characteristics Notes (1) WE is High for Read Cycle. (2) All read cycle timing is referenced from the last valid address to the first transition address. (3) tCHZ and tOHZ are defined as the time at which the outputs achieve open circuit conditions and are not referenced to output voltage levels. (4) At any given temperature and voltage condition, tCHZ (max) is less than tCLZ (min) both for a given module and from module to module. (5) These parameters are sampled and not 100% tested. Write Cycle No.1 Timing Waveform(1,4) tWC Address t WR(7) OE t AS(6) t AW t CW CS1~4 Don't Care WE t OHZ(3,9) t OW t WP(2) High-Z Dout t DW Din High-Z t DH Data Valid 5 (8) ISSUE 5.0 : May 2001 PUMA 68S16000/AB-020/025/35/45 Write Cycle No.2 Timing Waveform (1,5) tWC Address t AS(6) t WR(7) t CW CS1~4 t AW t WP(2) WE tOH t WHZ(3,9) t OW High-Z Dout t DW Din (8) (4) Don't Care t DH High-Z Data Valid AC Write Characteristics Notes (1) All write cycle timing is referenced from the last valid address to the first transition address. (2) All writes occur during the overlap of CS1~4 and WE low. (3) If OE, CS1~4, and WE are in the Read mode during this period, the I/O pins are low impedance state. Inputs of opposite phase to the output must not be applied because bus contention can occur. (4) Dout is the Read data of the new address. (5) OE is continuously low. (6) Address is valid prior to or coincident with CS1~4 and WE low, too avoid inadvertant writes. (7) CS1~4 or WE must be high during address transitions. (8) When CS1~4 are low : I/O pins are in the output state. Input signals of opposite phase leading to the output should not be applied. (9) Defined as the time at which the outputs achieve open circuit conditions and are not referenced to output voltage levels. These parameters are sampled and not 100% tested. 6 PUMA 68S16000/AB-020/025/35/45 ISSUE 5.0 : May 2001 Vcc A10 A8 A9 Version 'A' Block Diagram A7 CS4 WE1 A6 GND A5 CS3 A4 A3 A2 NC A0 A1 Version 'A' Pin Definition A0~A18 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 D0 D1 10 60 D16 11 59 D17 D2 D3 12 13 58 57 D18 D4 D5 14 56 D20 15 55 D21 D6 D7 GND 16 VIEW 54 17 FROM 53 D22 D23 52 GND D8 D9 19 51 D24 20 50 D25 D10 D11 21 49 22 48 D26 D27 D12 23 47 D28 D13 D14 24 46 25 45 D29 D30 D15 26 44 D31 18 ABOVE D19 Package Information 512K x 8 512K x 8 512K x 8 512K x 8 SRAM SRAM SRAM SRAM CS1 CS2 CS3 CS4 D0~7 D8~15 D16~23 D24~31 NC GND A18 WE3 WE4 A17 WE2 OE CS2 CS1 A16 A15 A14 A13 A12 Vcc A11 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 OE WE4 WE3 WE2 WE1 Dimensions in mm(inches) 25 .27 (0.9 95 ) 25 .02 (0.9 85 ) Pin 68 Pin 1 XXXXXX-X 5.0 8 (0. 200 ) m ax 0.4 6 (0. 018 ) 1.2 7 (0. 050 ) 23 .11 (0.9 10 ) 24 .13 (0.9 50 ) Notes: 1. All dimensions in mm (inches). 7 0.9 0 (0. 035 ) typ ISSUE 5.0 : May 2001 PUMA 68S16000/AB-020/025/35/45 Ordering Information PUMA 68S16000ABM-020 Speed 020 025 35 45 Temperature Range Build WE Option Organisation Package = = = = Blank = I = M = 20 ns 25 ns 35 ns 45 ns Commercial Temperature Industrial Temperature Military Temperature B = CSP based Blank A = = Single WE WE1-4 S16000 = 512K x 32 SRAM configurable as 1M x 16 and 2M x 8 PUMA 68 = 68 pin "J" Leaded PLCC Although this data is believed to be accurate the information contained herein is not intended to and does not create any warranty of merchantability or fitness for a particular purpose. Products are subject to a constant process of development. Data may be changed at any time without notice. Products are not authorised for use as critical components in life support devices or systems without the express written approval of a company director 8 PUMA 68S16000/AB-020/025/35/45 ISSUE 5.0 : May 2001 Moisture Sensitivity Devices are moisture sensitive. Shelf Life in Sealed Bag 12 months at <40OC and <90% relative humidity (RH). After this bag has been opened, devices that will be subjected to infrared reflow, vapour phase reflow, or equivalent processing (peak package body temp 220OC) must be : A : Mounted within 72 Hours at factory conditions of <30OC/60% RH OR B : Stored at <20% RH If these conditions are not met or indicator card is >20% when read at 23OC +/-5% devices require baking as specified below. If baking is required, devices may be baked for :A : 24 hours at 125OC +/-5% for high temperature device containers OR B : 192 hours at 40OC +5OC/-0OC and <5% RH for low temperature device containers. Packaging Standard Packaged in trays as standard. Tape and reel available for shipment quantities exceeding 200pcs upon request. Soldering Recomendations IR/Convection - Ramp Rate Temp. exceeding 183OC Peak Temperature Time within 5OC of peak Ramp down 6OC/sec max. 150 secs. max. 225OC 20 secs max. 6OC/sec max. Vapour Phase - Ramp up rate Peak Temperature Time within 5OC of peak Ramp down 6OC/sec max. 215 - 219OC 60 secs max. 6OC/sec max. Note : The above recomendations are based on standard industry practice. Failiure to comply with the above recomendations invalidates product warranty. 9
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