BCR1AM-12 Datasheet

BCR1AM-12 Datasheet
Preliminary Datasheet
BCR1AM-12
R07DS0154EJ0200
(Previous: REJ03G0344-0100)
Rev.2.00
Sep 17, 2010
Triac
Low Power Use
Features




 Non-Insulated Type
 Glass Passivation Type
IT (RMS) : 1 A
VDRM : 600 V
IFGTI , IRGTI, IRGT III : 5 mA (3 mA)Note5
IFGT III : 10 mA
Outline
RENESAS Package code: PRSS0003EA-A
(Package name: TO-92*)
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
3
2
Applications
Contactless AC switch, fan motor, rice-cooker, electric pot, air cleaner, heater, refrigerator, washing machine, electric
fan, vending machine, trigger circuit for low and medium triac, and other general purpose control applications
Maximum Ratings
Parameter
Voltage class
12
600
720
Symbol
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
VDRM
VDSM
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
1.0
Unit
A
Surge on-state current
ITSM
10
A
I2t
0.41
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
1
0.1
6
0.5
– 40 to +125
– 40 to +125
0.23
W
W
V
A
C
C
g
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Unit
V
V
Conditions
Commercial frequency, sine full wave
Note3
360° conduction, Tc = 56C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Notes: 1. Gate open.
R07DS0154EJ0200 Rev.2.00
Sep 17, 2010
Page 1 of 6
BCR1AM-12
Preliminary
Electrical Characteristics
Parameter
Symbol
Gate trigger currentNote2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2.
3.
4.
5.
Unit
Test conditions
IDRM
VTM



VFGT
VRGT
VRGT
—
—
—
—
—
—
2.0
2.0
2.0
V
V
V
V



V
VFGT
IFGT
IRGT
IRGT
IFGT
—
—
—
—
—
—
—
—
—
—
2.0
5
5Note5
5Note5
10
V
mA
mA
mA
mA
VGD
Rth (j-c)
0.1
—
—
—
—
50
V
C/W
Tj = 125C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
2
—
—
V/s
Tj = 125C
Repetitive peak off-state current
On-state voltage
Gate trigger voltageNote2
Rated value
Typ.
Max.
—
0.5
—
1.6
Min.
—
—
mA
V
Tj = 125C, VDRM applied
Tc = 25C, ITM = 1.5 A,
Instantaneous measurement
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
Measurement using the gate trigger characteristics measurement circuit.
Case temperature is measured at the T2 terminal 1.5 mm away from the molded case.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
High sensitivity (IGT  3 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = – 0.5 A/ms
3. Peak off-state voltage
VD = 400 V
R07DS0154EJ0200 Rev.2.00
Sep 17, 2010
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 6
BCR1AM-12
Preliminary
Performance Curves
102
7 Tj = 25°C
5
3
2
Rated Surge On-State Current
10
Surge On-State Current (A)
On-State Current (A)
Maximum On-State Characteristics
101
7
5
3
2
100
7
5
3
2
2 3 4 5 7 101
2 3 4 5 7 102
Gate Trigger Current vs.
Junction Temperature
PG(AV)
= 0.1W
VGM = 6V
PGM =
1W
IGM
= 0.5A
IFGT III
VGD = 0.1V
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics
103
7
5
4
3
2
Typical Example
IFGT I, IRGT I
102
7
5
4
3
2
IRGT III, IFGT III
101
–60 –40 –20 0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal
Impedance Characteristics
(Junction to case, Junction to ambient)
103
7
5
4
3
2
Typical Example
VFGT I, VRGT I
VRGT III,VFGT III
101
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
R07DS0154EJ0200 Rev.2.00
Sep 17, 2010
Transient Thermal Impedance (°C/W)
Gate Voltage (V)
2
Conduction Time (Cycles at 60Hz)
10–2
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
4
On-State Voltage (V)
100
7
5
3 IFGT I
2 IRGT I
IRGT III
10–1
7
5
3
2
102
7
5
4
3
2
6
0
100
10–1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
101
7
5
3
2
8
102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
103
7
5
3
2
Junction to ambient
102
7
5
Junction to case
3
2
101
7
5
3
2
100
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
Page 3 of 6
BCR1AM-12
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
Maximum On-State Power Dissipation
1.6
1.2
0.8
0.4
0
360° Conduction
Resistive,
inductive loads
0
0.4
1.2
1.6
2.0
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
120
100
80
60
40
20
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
RMS On-State Current (A)
105
7 Typical Example
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Holding Current vs.
Junction Temperature
103
7
5
4
3
2
Latching Current vs.
Junction Temperature
Typical Example
Latching Current (mA)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Curves apply regardless
of conduction angle
RMS On-State Current (A)
140
0
140
RMS On-State Current (A)
160
Ambient Temperature (°C)
0.8
Case Temperature (°C)
160
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
On-State Power Dissipation (W)
2.0
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
R07DS0154EJ0200 Rev.2.00
Sep 17, 2010
102
7
5
3
2
Distribution
T2+, G–
Typical Example
101
7
5
3
2
100
7
5
3
2
T2+, G+
T2–, G– Typical Example
T2–, G+
10-1
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Page 4 of 6
BCR1AM-12
Preliminary
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
101
7
5
4
3
2
Typical Example
Tj = 125°C
140
120
I Quadrant
100
80
60
40
III Quadrant
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Commutation Characteristics
Gate Trigger Current vs.
Gate Current Pulse Width
III Quadrant
Minimum
Characteristics
Value
I Quadrant
10–1 –1
10
160
Rate of Rise of Off-State Voltage (V/μs)
Typical Example
Tj = 125°C
IT = 1A
τ = 500μs
VD = 200V
100
7
5
4
3
2
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Junction Temperature (°C)
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Breakover Voltage vs.
Junction Temperature
2 3 4 5 7 100
2 3 4 5 7 101
Rate of Decay of On-State
Commutating Current (A/ms)
103
7
5
4
3
2
102
7
5
4
3
2
101 0
10
Typical Example
IFGT I
IFGT III
IRGT III
IRGT I
2 3 4 5 7 101
2 3 4 5 7 102
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
A
6V
V
A
6V
330Ω
330Ω
V
Test Procedure I
Test Procedure II
6Ω
6Ω
A
6V
V
330Ω
Test Procedure III
R07DS0154EJ0200 Rev.2.00
Sep 17, 2010
A
6V
V
330Ω
Test Procedure IV
Page 5 of 6
BCR1AM-12
Preliminary
Package Dimensions
Package Name
TO-92*
JEITA Package Code
SC-43A
RENESAS Code
PRSS0003EA-A
Previous Code
T920
MASS[Typ.]
0.23g
Unit: mm
φ5.0Max
11.5Min
5.0Max
4.4
1.25 1.25
3.6
1.1
Circumscribed circle φ0.7
Order Code
Lead form
Straight type
Lead form
Form A8
Standard packing
Vinyl sack
Vinyl sack
Taping
Quantity
500
500
2000
Standard order code
Type name
Type name – Lead forming code
Type name – TB
Standard order
code example
BCR1AM-12
BCR1AM-12-A6
BCR1AM-12-TB
Note : Please confirm the specification about the shipping in detail.
R07DS0154EJ0200 Rev.2.00
Sep 17, 2010
Page 6 of 6
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