BLF888A,112 datasheet

BLF888A,112 datasheet
BLF888A; BLF888AS
UHF power LDMOS transistor
Rev. 6 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Table 1.
Application information
RF performance at VDS = 50 V unless otherwise specified.
Mode of operation
f
PL(AV)
PL(M)
Gp
D
IMD3
IMDshldr
PAR
(MHz)
(W)
(W)
(dB)
(%)
(dBc)
(dBc)
(dB)
RF performance in a common source narrowband test circuit
CW
650
-
600
20
67
-
-
-
CW (42 V)
650
-
500
20
69
-
-
-
2-tone, class-AB
f1 = 860; f2 = 860.1
250
-
21
46
32
-
-
pulsed, class-AB [1]
860
-
600
20
58
-
-
-
DVB-T (8k OFDM)
858
110
-
21
31
-
32 [2]
8.2 [3]
858
125
-
21
32.5
-
30 [2]
8.0 [3]
-
32 [2]
8.0 [3]
-
31
7.8 [3]
RF performance in a common source 470 MHz to 860 MHz broadband test circuit
DVB-T (8k OFDM)
858
858
110
120
-
20
20
30
31
[2]
[1]
Measured at  = 10 %; tp = 100 s.
[2]
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[3]
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
1.2 Features and benefits










Excellent ruggedness (VSWR  40 : 1 through all phases)
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
Suitable for CW UHF and ISM applications
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
BLF888A; BLF888AS
UHF power LDMOS transistor
1.3 Applications
 Communication transmitter applications in the UHF band
 Industrial applications in the UHF band
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BLF888A (SOT539A)
1
drain1
2
drain2
3
gate1
4
gate2
5
1
2
1
5
3
3
4
5
4
[1]
source
2
sym117
BLF888AS (SOT539B)
1
drain1
2
drain2
3
gate1
4
gate2
5
source
1
2
1
5
3
4
3
5
4
[1]
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
BLF888A_BLF888AS#6
Product data sheet
Package
Name
Description
Version
BLF888A
-
flanged balanced ceramic package;
2 mounting holes; 4 leads
SOT539A
BLF888AS
-
earless flanged balanced ceramic package;
4 leads
SOT539B
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
2 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
110
V
VGS
gate-source voltage
0.5
+11
V
Tstg
storage temperature
65
+150
C
-
225
C
junction temperature
Tj
[1]
[1]
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Rth(j-c)
[1]
Conditions
Typ
thermal resistance from junction to case Tcase = 80 C; PL(AV) = 125 W
[1]
Unit
0.15 K/W
Rth(j-c) is measured under RF conditions.
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C; per section unless otherwise specified.
BLF888A_BLF888AS#6
Product data sheet
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage
VGS = 0 V; ID = 2.4 mA
[1]
110 -
-
V
VDS = 10 V; ID = 240 mA
[1]
1.4
1.9
2.4
V
VGS(th)
gate-source threshold voltage
IDSS
drain leakage current
VGS = 0 V; VDS = 50 V
-
-
2.8
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
36
-
A
IGSS
gate leakage current
VGS = 10 V; VDS = 0 V
280
nA
-
-
-
143 -
m
-
220 -
pF
RDS(on)
drain-source on-state resistance
VGS = VGS(th) + 3.75 V;
ID = 8.5 A
[1]
Ciss
input capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
[2]
Coss
output capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
74
-
pF
Crss
reverse transfer capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
1.2
-
pF
[1]
ID is the drain current.
[2]
Capacitance values without internal matching.
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
3 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
Table 7.
RF characteristics
RF characteristics in Ampleon production narrowband test circuit; Tcase = 25 C unless otherwise
specified.
Symbol
Parameter
Conditions
Min Typ Max Unit
2-Tone, class-AB
VDS
drain-source voltage
[1]
-
50
-
1.3
-
V
IDq
quiescent drain current
-
A
PL(AV)
average output power
f1 = 860 MHz;
f2 = 860.1 MHz
250 -
-
W
Gp
power gain
f1 = 860 MHz;
f2 = 860.1 MHz
20
21
-
dB
D
drain efficiency
f1 = 860 MHz;
f2 = 860.1 MHz
42
46
-
%
IMD3
third-order intermodulation distortion
f1 = 860 MHz;
f2 = 860.1 MHz
-
32 28
dBc
-
50
-
V
-
1.3
-
A
DVB-T (8k OFDM), class-AB
VDS
drain-source voltage
[1]
IDq
quiescent drain current
PL(AV)
average output power
f = 858 MHz
110
-
-
W
Gp
power gain
f = 858 MHz
20
21
-
dB
D
drain efficiency
f = 858 MHz
-
%
IMDshldr
PAR
intermodulation distortion shoulder
peak-to-average ratio
28
31
f = 858 MHz
[2]
-
32 28
dBc
f = 858 MHz
[3]
-
8.2
dB
-
[1]
IDq for total device.
[2]
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[3]
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
001aam579
400
Coss
(pF)
300
200
100
0
0
20
40
60
VDS (V)
VGS = 0 V; f = 1 MHz.
Fig 1.
BLF888A_BLF888AS#6
Product data sheet
Output capacitance as a function of drain-source voltage; typical values per
section
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
4 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
6.1 Ruggedness in class-AB operation
The BLF888A and BLF888AS are capable of withstanding a load mismatch corresponding
to VSWR  40 : 1 through all phases under the following conditions: VDS = 50 V;
f = 860 MHz at rated power.
7. Application information
7.1 Narrowband RF figures
7.1.1 2-Tone
001aan761
24
Gp
(dB)
ηD
(%)
Gp
20
Gp
(dB)
0
IMD3
(dBc)
Gp
20
40
ηD
001aan762
24
60
-20
IMD3
16
16
20
12
0
100
200
300
12
0
400
500
PL(AV) (W)
0
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
Fig 2.
2-Tone power gain and drain efficiency as
function of load power; typical values
BLF888A_BLF888AS#6
Product data sheet
-40
100
200
300
-60
400
500
PL(AV) (W)
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
Fig 3.
2-Tone power gain and third order
intermodulation distortion as load power;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
5 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
7.1.2 DVB-T
001aam582
24
Gp
(dB)
22
Gp
0
IMDshldr
(dBc)
−10
001aam583
12
PAR
(dB)
10
PAR
60
ηD
(%)
50
−20
8
−30
6
16
−40
4
20
14
−50
2
10
−60
350
PL(AV) (W)
0
20
18
IMDshldr
12
0
50
100
150
200
250
300
DVB-T power gain and intermodulation
distortion shoulder as function of load power;
typical values
30
ηD
0
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
Fig 4.
40
50
100
150
200
250
0
350
PL(AV) (W)
300
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
Fig 5.
DVB-T peak-to-average ratio and drain
efficiency as function of load power;
typical values
7.2 Broadband RF figures
7.2.1 DVB-T
001aam585
24
Gp
(dB)
−10
IMDshldr
(dBc)
Gp
20
16
IMDshldr
12
8
400
500
600
700
−20
8.5
−30
7.5
−40
6.5
−50
800
900
f (MHz)
DVB-T power gain and intermodulation
distortion shoulder as a function of frequency;
typical values
BLF888A_BLF888AS#6
Product data sheet
50
ηD
(%)
PAR
(dB)
40
PAR
ηD
30
20
5.5
400
500
600
700
10
800
900
f (MHz)
PL(AV) = 110 W; VDS = 50 V; IDq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
PL(AV) = 110 W; VDS = 50 V; IDq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
Fig 6.
001aam584
9.5
Fig 7.
DVB-T peak-to-average ratio and drain
efficiency as function of frequency;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
6 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
7.3 Impedance information
drain 1
gate 1
Zi
ZL
gate 2
drain 2
001aan207
Fig 8.
Definition of transistor impedance
Table 8.
Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(AV) = 110 W (DVB-T).
BLF888A_BLF888AS#6
Product data sheet
f
Zi
ZL
MHz


300
0.617  j1.715
4.989 + j1.365
325
0.635  j1.355
4.867 + j1.424
350
0.655  j1.026
4.741 + j1.472
375
0.677  j0.721
4.614 + j1.511
400
0.702  j0.435
4.486 + j1.540
425
0.731  j0.164
4.357 + j1.559
450
0.762 + j0.096
4.228 + j1.570
475
0.798 + j0.347
4.100 + j1.573
500
0.839 + j0.592
4.974 + j1.567
525
0.884 + j0.833
3.850 + j1.554
550
0.936 + j1.072
3.728 + j1.534
575
0.995 + j1.310
3.608 + j1.508
600
1.063 + j1.549
3.492 + j1.475
625
1.141 + j1.791
3.378 + j1.437
650
1.230 + j2.037
3.268 + j1.394
675
1.334 + j2.289
3.161 + j1.347
700
1.456 + j2.548
3.057 + j1.295
725
1.599 + j2.814
2.957 + j1.239
750
1.768 + j3.090
2.860 + j1.180
775
1.971 + j3.376
2.676 + j1.118
800
2.214 + j3.671
2.677 + j1.053
825
2.510 + j3.975
2.591 + j0.985
850
2.873 + j4.282
2.508 + j0.915
875
3.320 + j4.584
2.428 + j0.843
900
3.875 + j4.865
2.351 + j0.770
925
4.562 + j5.095
2.277 + j0.695
950
5.409 + j5.223
2.206 + j0.618
975
6.426 + j5.166
2.138 + j0.540
1000
7.587 + j4.807
2.073 + j0.461
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
7 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
7.4 Reliability
001aam586
107
Years
106
(1)
(2)
(3)
(4)
(5)
(6)
105
104
103
(7)
(8)
(9)
(10)
(11)
102
10
1
0
2
4
6
8
10
12
14
16
18
20
IDS(DC) (A)
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %)  1 / .
(1) Tj = 100 C
(2) Tj = 110 C
(3) Tj = 120 C
(4) Tj = 130 C
(5) Tj = 140 C
(6) Tj = 150 C
(7) Tj = 160 C
(8) Tj = 170 C
(9) Tj = 180 C
(10) Tj = 190 C
(11) Tj = 200 C
Fig 9.
BLF888A_BLF888AS#6
Product data sheet
BLF888A; BLF888AS electromigration (IDS(DC), total device)
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
8 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
8. Test information
Table 9.
List of components
For test circuit, see Figure 10, Figure 11 and Figure 12.
Component
Description
Value
Remarks
B1, B2
semi rigid coax
25 ; 49.5 mm
C1
multilayer ceramic chip capacitor
12 pF
[1]
C2, C3, C4, C5,
C6
multilayer ceramic chip capacitor
8.2 pF
[1]
C7
multilayer ceramic chip capacitor
6.8 pF
[2]
C8
multilayer ceramic chip capacitor
2.7 pF
[2]
C9
multilayer ceramic chip capacitor
2.2 pF
[2]
C10, C13, C14
multilayer ceramic chip capacitor
100 pF
[3]
C11, C12
multilayer ceramic chip capacitor
10 pF
[2]
C15, C16
multilayer ceramic chip capacitor
4.7 F, 50 V
C17, C18, C23,
C24
multilayer ceramic chip capacitor
100 pF
C19, C20
multilayer ceramic chip capacitor
10 F, 50 V
C21, C22
electrolytic capacitor
470 F; 63 V
C30
multilayer ceramic chip capacitor
10 pF
[4]
C31
multilayer ceramic chip capacitor
9.1 pF
[4]
C32
multilayer ceramic chip capacitor
3.9 pF
[4]
C33, C34, C35
multilayer ceramic chip capacitor
100 pF
[4]
C36, C37
multilayer ceramic chip capacitor
4.7 F, 50 V
L1
microstrip
-
[5]
(W  L) 15 mm  13 mm
-
[5]
(W  L) 5 mm  26 mm
(W  L) 2 mm  49.5 mm
L2
microstrip
UT-090C-25 (EZ 90-25)
Kemet C1210X475K5RAC-TU or
capacitor of same quality.
[2]
TDK C570X7R1H106KT000N or
capacitor of same quality.
TDK C4532X7R1E475MT020U or
capacitor of same quality.
L3, L32
microstrip
-
[5]
L4
microstrip
-
[5]
(W  L) 1.7 mm 3.5 mm
L5
microstrip
-
[5]
(W  L) 2 mm  9.5 mm
-
[5]
(W  L) 5 mm  13 mm
(W  L) 2 mm  11 mm
(W  L) 2 mm  3 mm
L30
microstrip
L31
microstrip
-
[5]
L33
microstrip
-
[5]
R1, R2
wire resistor
10 
R3, R4
SMD resistor
5.6 
R5, R6
wire resistor
100 
R7, R8
potentiometer
10 k
0805
[1]
American technical ceramics type 800R or capacitor of same quality.
[2]
American technical ceramics type 800B or capacitor of same quality.
[3]
American technical ceramics type 180R or capacitor of same quality.
[4]
American technical ceramics type 100A or capacitor of same quality.
[5]
Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; height = 0.762 mm; Cu (top/bottom metallization);
thickness copper plating = 35 m.
BLF888A_BLF888AS#6
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
9 of 17
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx
xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx
xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx
BLF888A_BLF888AS#6
Product data sheet
+VG1(test)
R7
C19
+VD1(test)
L5
R3
C34
L32
50 Ω
C33
C21
C11
L30
L2
C1
C32
L33
C5
C3
C8
L4
B2
C10
50 Ω
B1
C31
R4
C15
C13
L3
L1
L31
C30
C2
C4
C35
C6
C7
C9
C12
C37
C14
C16
C22
R6
C23
C18
R2
C24
+VD2(test)
C20
R8
10 of 17
© Ampleon The Netherlands B.V. 2015. All rights reserved.
See Table 9 for a list of components.
Fig 10. Class-AB common source broadband amplifier; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages
001aan763
UHF power LDMOS transistor
+VG2(test)
BLF888A; BLF888AS
Rev. 6 — 1 September 2015
All information provided in this document is subject to legal disclaimers.
R1
C17
R5
C36
BLF888A; BLF888AS
UHF power LDMOS transistor
L3
L32
L5
L30
L1
50 mm
L2
L31
L33
L4
L31
L2
L1
L30
L5
L32
L3
105 mm
001aam588
See Table 9 for a list of components.
Fig 11. Printed-Circuit Board (PCB) for class-AB common source amplifier
49.6 mm
44 mm
+VG1(test)
+VD1(test)
C23
R7
C36
+
R1
C17
R5
C19
C21
C11
R3
C34
C33
50 Ω
C15
C10
C1
C30
C32
C3
C7
C5
C9
C13
50 Ω
C31
C35
C2
C4
C6
C14
C8
C12
4 mm
C16
R4
C22
C37
R6
C20
R2
R8
C24
C18
+
+VG2(test)
+VD2(test)
6.3 mm
25.3 mm
26.3 mm
36.8 mm
001aan764
See Table 9 for a list of components.
Fig 12. Component layout for class-AB common source amplifier
BLF888A_BLF888AS#6
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
11 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
9. Package outline
Flanged balanced ceramic package; 2 mounting holes; 4 leads
SOT539A
D
A
F
D1
U1
B
q
C
w2 M C M
H1
1
c
2
E1
p
H U2
5
L
3
A
E
w1 M A M B M
4
w3 M
b
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
mm
4.7
4.2
inches
b
c
D
D1
e
E
E1
11.81 0.18 31.55 31.52
9.50
13.72
11.56 0.10 30.94 30.96
9.30
9.53
9.27
F
H
H1
L
1.75 17.12 25.53 3.48
1.50 16.10 25.27 2.97
p
Q
q
U1
3.30
3.05
2.26
2.01
35.56
U2
w1
41.28 10.29
0.25
41.02 10.03
w2
w3
0.51
0.25
0.185 0.465 0.007 1.242 1.241
0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089
1.625 0.405
1.400
0.010 0.020 0.010
0.540
0.165 0.455 0.004 1.218 1.219
0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079
1.615 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
10-02-02
12-05-02
SOT539A
Fig 13. Package outline SOT539A
BLF888A_BLF888AS#6
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
12 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
Earless flanged balanced ceramic package; 4 leads
SOT539B
D
A
F
5
D1
D
U1
H1
w2
1
c
D
2
E1
U2
H
E
L
3
4
w3
b
Q
e
0
5
10 mm
scale
Dimensions
Unit(1)
w2
w3
0.25
0.25
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
0.069 0.674 1.005 0.137 0.089 1.275 0.405
inches nom
0.01
0.54
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
0.059 0.634 0.995 0.117 0.079 1.265 0.395
0.01
mm
max
nom
min
A
b
4.7
11.81
c
D
D1
0.18 31.55 31.52
E
E1
9.5
9.53
e
F
H
H1
L
Q
U1
U2
1.75 17.12 25.53 3.48
2.26 32.39 10.29
1.50 16.10 25.27 2.97
2.01 32.13 10.03
13.72
4.2
11.56
0.10 30.94 30.96
9.3
9.27
Note
1. millimeter dimensions are derived from the original inch dimensions.
Outline
version
References
IEC
JEDEC
JEITA
sot539b_po
European
projection
Issue date
12-05-02
13-05-24
SOT539B
Fig 14. Package outline SOT539B
BLF888A_BLF888AS#6
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
13 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
10. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
11. Abbreviations
Table 10.
Abbreviations
Acronym
Description
CCDF
Complementary Cumulative Distribution Function
CW
Continuous Wave
DVB
Digital Video Broadcast
DVB-T
Digital Video Broadcast - Terrestrial
ISM
Industrial, Scientific and Medical
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
MTF
Median Time to Failure
OFDM
Orthogonal Frequency Division Multiplexing
PAR
Peak-to-Average power Ratio
SMD
Surface Mounted Device
UHF
Ultra High Frequency
VSWR
Voltage Standing-Wave Ratio
12. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF888A_BLF888AS#6
20150901
Product data sheet
-
BLF888A_BLF888AS v.5
Modifications:
•
The format of this document has been redesigned to comply with the new identity
guidelines of Ampleon.
•
Legal texts have been adapted to the new company name where appropriate.
BLF888A_BLF888AS v.5
20131104
BLF888A_BLF888AS v.4
20130712
Product data sheet
-
BLF888A_BLF888AS v.3
BLF888A_BLF888AS v.3
20110830
Product data sheet
-
BLF888A_BLF888AS v.2
BLF888A_BLF888AS v.2
20110301
Preliminary data sheet
-
BLF888A_BLF888AS v.1
BLF888A_BLF888AS v.1
20100921
Objective data sheet
-
-
BLF888A_BLF888AS#6
Product data sheet
Product data sheet
-
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 1 September 2015
BLF888A_BLF888AS v.4
© Ampleon The Netherlands B.V. 2015. All rights reserved.
14 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Definition
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLF888A_BLF888AS#6
Product data sheet
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
15 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13.4 Licenses
ICs with DVB-T or DVB-T2 functionality
Use of this product in any manner that complies with the DVB-T or the
DVB-T2 standard may require licenses under applicable patents of the
DVB-T respectively the DVB-T2 patent portfolio, which license is available
from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under
applicable patents of other parties.
13.5 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
14. Contact information
For more information, please visit:
http://www.ampleon.com
BLF888A_BLF888AS#6
Product data sheet
For sales office addresses, please visit:
http://www.ampleon.com/sales
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
16 of 17
BLF888A; BLF888AS
UHF power LDMOS transistor
15. Contents
1
1.1
1.2
1.3
2
3
4
5
6
6.1
7
7.1
7.1.1
7.1.2
7.2
7.2.1
7.3
7.4
8
9
10
11
12
13
13.1
13.2
13.3
13.4
13.5
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . . 5
Narrowband RF figures . . . . . . . . . . . . . . . . . . 5
2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Broadband RF figures . . . . . . . . . . . . . . . . . . . 6
DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Impedance information . . . . . . . . . . . . . . . . . . . 7
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
Handling information. . . . . . . . . . . . . . . . . . . . 14
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Contact information. . . . . . . . . . . . . . . . . . . . . 16
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon The Netherlands B.V. 2015.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLF888A_BLF888AS#6
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertisement