BCR3KM-12(RA) Datasheet

BCR3KM-12(RA) Datasheet
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April 1st, 2010
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“Standard”:
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12.
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
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BCR3KM-12
Triac
Low Power Use
REJ03G0312-0200
Rev.2.00
Nov.09.2004
Features
• Insulated Type
• Planar Passivation Type
• UL Recognized : Yellow Card No. E223904
File No. E80271
• IT(RMS) : 3 A
• VDRM : 600 V
• IFGT I, IRGT I, IRGT III : 15 mA (10 mA)Note3
Outline
TO-220FN
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Electric rice cooker, electric pot, and controller for other heater
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Rev.2.00,
Nov.09.2004,
page 1 of 6
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
BCR3KM-12
Symbol
Ratings
Unit
RMS on-state current
Parameter
IT(RMS)
3.0
A
Commercial frequency, sine full wave
360° conduction, Tc = 111°C
Surge on-state current
ITSM
30
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t
3.7
A2s
PGM
PG(AV)
VGM
IGM
Tj
Tstg
—
Viso
3
0.3
6
0.5
– 40 to +125
– 40 to +125
2.0
2000
W
W
V
A
°C
°C
g
V
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.5
Unit
mA
V
VFGT I
VRGT I
VRGT III
IFGT I
IRGT I
IRGT III
VGD
Rth(j-c)
Rth(j-a)
—
—
—
—
—
—
0.2
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
15Note3
15Note3
15Note3
—
4.0
50
V
V
V
mA
mA
mA
V
°C/W
°C/W
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Conditions
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltageNote2
Gate trigger currentNote2
Gate non-trigger voltage
Thermal resistance
Thermal resistance
I
II
III
I
II
III
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. High sensitivity (IGT ≤ 10 mA) is also available. (IGT item: 1)
4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
Rev.2.00,
Nov.09.2004,
page 2 of 6
Test conditions
Tj = 125°C, VDRM applied
Tc = 25°C, ITM = 4.5 A,
Instantaneous measurement
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Tj = 125°C, VD = 1/2VDRM
Junction to caseNote4
Junction to ambient
BCR3KM-12
Performance Curves
102
7
5
3
2
Rated Surge On-State Current
40
Tj = 25°C
Surge On-State Current (A)
On-State Current (A)
Maximum On-State Characteristics
101
7
5
3
2
100
7
5
3
2
10
5
2 3 4 5 7 101
2 3 4 5 7 102
3
2
PGM = 3W
101
7
5
VGT
PG(AV) = 0.3W
IGM =
0.5A
100
IRGT I
IFGT I, IRGT III
VGD = 0.2V
10–1 0
10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Trigger Current vs.
Junction Temperature
103
7
5
4
3
2
102
7
5
4
3
2
101
Typical Example
IRGT III
IFGT I, IRGT I
–60 –40 –20
0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
4
3
2
Typical Example
102
7
5
4
3
2
101
–60 –40 –20
0 20 40 60 80 100 120 140
Junction Temperature (°C)
Nov.09.2004,
page 3 of 6
Transient Thermal Impedance (°C/W)
Gate Voltage (V)
15
Gate Characteristics (I, II and III)
3
2
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
20
Conduction Time (Cycles at 60Hz)
7
5
Rev.2.00,
25
On-State Voltage (V)
102
7
5
30
0
100
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
3
2
35
102 2 3 5 7 103 2 3 5 7
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
BCR3KM-12
102
On-State Power Dissipation (W)
5.0
7
5
4
3
2
101
7
5
4
3
2
100 2
10 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
Ambient Temperature (°C)
4.5
4.0
360° Conduction
3.5 Resistive,
3.0 inductive loads
2.5
2.0
1.5
1.0
0.5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
140
140
120
100 Curves apply regardless
of conduction angle
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Ambient Temperature (°C)
160
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
120
100
80 All fins are black painted
aluminum and greased
60
40 Curves apply regardless
of conduction angle
20 Resistive, inductive loads
Natural convection
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
4.0
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
140
120
100
80
60
40
20
0
0
Conduction Time (Cycles at 60Hz)
160
0
0.5
1.0
1.5
2.0
2.5
RMS On-State Current (A)
Rev.2.00,
Maximum On-State Power Dissipation
Nov.09.2004,
page 4 of 6
3.0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Case Temperature (°C)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
105
7
5
Typical Example
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20
0 20 40 60 80 100 120 140
Junction Temperature (°C)
BCR3KM-12
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
103
103
Typical Example
7
5
Latching Current (mA)
7
5
4
3
2
102
7
5
4
3
–60 –40 –20
7
5
3
2
101
7
5
100
0 20 40 60 80 100 120 140
T2+, G–
Typical Example
102
3
2
101
Distribution
3
2
2
T2+, G+
Typical Example
T2–, G–
–60 –40 –20
0 20 40 60 80 100 120 140
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20
0 20 40 60 80 100120 140
160
Typical Example
Tj = 125°C
140
120
100
III Quadrant
80
60
I Quadrant
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Gate Trigger Current vs.
Gate Current Pulse Width
Gate Trigger Characteristics Test Circuits
103
7
5
4
3
Typical Example
IRGT III
6Ω
6Ω
IRGT I
IFGT I
2
A
6V
102
Test Procedure I
7
5
4
3
6Ω
A
6V
2
3 4 5 7 101
2
3 4 5 7 102
Nov.09.2004,
page 5 of 6
V
V
330Ω
Test Procedure II
2
101 0
10
A
6V
330Ω
V
Gate Current Pulse Width (µs)
Rev.2.00,
Latching Current vs.
Junction Temperature
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Holding Current vs.
Junction Temperature
330Ω
Test Procedure III
BCR3KM-12
Package Dimensions
TO-220FN
EIAJ Package Code

JEDEC Code

Mass (g) (reference value)
Lead Material
2.0
Cu alloy
2.8 ± 0.2
6.5 ± 0.3
3 ± 0.3
φ 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
15 ± 0.3
10 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
4.5 ± 0.2
2.54 ± 0.25
2.6 ± 0.2
Symbol
Dimension in Millimeters
Min
Typ
Max
A
A1
A2
b
D
E
e
x
y
y1
ZD
ZE
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form
Standard packing
Quantity
Standard order code
Straight type
Plastic Magazine (Tube)
50 Type name +RA
Lead form
Plastic Magazine (Tube)
50 Type name +RA – Lead forming code
Note : Please confirm the specification about the shipping in detail.
Rev.2.00,
Nov.09.2004,
page 6 of 6
Standard order
code example
BCR3KM-12RA
BCR3KM-12RA-A8
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,
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Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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© 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .2.0
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