HMC AUH312

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
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HMC-AUH312
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HMC-AUH312
v03.0209
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, 0.5 - 65 GHz
Typical Applications
Features
This HMC-AUH312 is ideal for:
Small Signal Gain: >8 dB
• Fiber Optic Modulator Driver
65 GHz Distributed Amplifier
• Fiber Optic Photoreceiver Post Amplifier
Can be configured with and
w/o Bias-Tees for Vd and Vg1 bias
• Gain Block for Test & Measurement Equipment
4
Low Power Dissipation:
300 mW with Bias Tee @ Vdd = 5V
360 mW w/o Bias Tee @ Vdd = 6V
480 mW w/o Bias Tee @ Vdd = 8V
• Point-to-Point/Point-to-Multi-Point Radio
• Wideband Communication & Surveillance Systems
MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
• Radar Warning Receivers
4 - 20
Small Die Size: 1.2 x 1.0 x 0.1 mm
General Description
Functional Diagram
The HMC-AUH312 is a GaAs MMIC HEMT Distributed Driver Amplifier die which operates between
500 MHz and 65 GHz and provides a typical 3
dB bandwidth in excess of 65 GHz. The amplifier
provides 10 dB of small signal gain and a maximum
output amplitude of 2.5V peak to peak, which makes it
ideal for use in broadband wireless, fiber optic communication and test equipment applications. The amplifier
die occupies 1.2 mm2 which facilitates easy integration
into Multi-Chip-Modules (MCMs). The HMC-AUH312
can be used with or without a bias-tee and requires
off-chip blocking components and bypass capacitors
for the DC supply lines. Adjustable gate voltages allow
for gain adjustment.
Electrical Specifi cations, TA = +25° C, Vdd= +8V *
Parameter
Min.
Frequency Range
Gain
8
Typ.
Max.
Units
0.5 - 65
GHz
10
dB
Input Return Loss
12
dB
Output Return Loss
15
dB
Supply Current (Idd) (Vdd= 8V)
60
mA
*Unless otherwise indicated, all measurements are from probed die
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-AUH312
v03.0209
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, 0.5 - 65 GHz
On-Wafer Group Delay vs. Frequency
On-Wafer Gain vs. Frequency
50
16
GROUP DELAY (pSec)
14
GAIN (dB)
12
10
8
6
4
40
30
4
20
10
0
0
0
20
40
60
80
0
100
20
FREQUENCY (GHz)
On-Wafer Input Return Loss vs. Frequency
60
80
100
On-Wafer
Output Return Loss vs. Frequency
0
0
-5
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
40
FREQUENCY (GHz)
-10
-15
-20
-10
-15
-20
-25
-25
0
20
40
60
FREQUENCY (GHz)
80
100
0
20
40
60
80
100
FREQUENCY (GHz)
MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
2
Note: Measured Performance Characteristics (Operating Temperature TA=25ºC) Vdd = 6V, Vgg2 = 1.8V Idd = 60mA (On-Wafer)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4 - 21
HMC-AUH312
v03.0209
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, 0.5 - 65 GHz
Recommended
Operating Conditions w/ Bias Tee
Absolute Maximum Ratings
Drain Bias Voltage w/ Bias Tee (Vdd)
MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
4
4 - 22
+7 Vdc
Parameter
Min.
Typ.
Max.
Units
3
5
6
V
80
mA
Drain Bias Voltage w/out Bias Tee (Vdd)
+8.25 Vdc
Positive Supply Voltage
Gain Bias Voltage (Vg1)
0.5V
Positive Supply Current
Gain Bias Voltage (Vg2)
1.8V
Gate Voltage (Vg1)
RF Input Power
+10 dBm
Gate Voltage (Vg2)
Channel Temperature
180 °C
RF Input Power
Storage Temperature
-40 to +85 °C
Operating Temperature
Operating Temperature
-0 to +70 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
60
-1
0.3
1.8
0
25
Alternate
GP-2 (Gel Pack)
[2]
°C
Parameter
Min.
Typ.
Max.
Units
5
8
8.25
V
65
mA
0.5
V
60
Gate Voltage (Vg1)
-1
Gate Voltage (Vg2)
1
1.8
0
25
Operating Temperature
Standard
dBm
Positive Supply Voltage
RF Input Power
Die Packaging Information [1]
4
70
Recommended
Operating Conditions w/out Bias Tee
Positive Supply Current
Outline Drawing
V
4
dBm
70
°C
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
V
V
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-AUH312
v03.0209
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, 0.5 - 65 GHz
Pad Descriptions
Pad Number
Function
Description
1
RFIN
DC coupled. An off chip blocking cap is needed.
2, 4
Vg1, Vg2
Gate control for amplifier. Please follow “MMIC Amplifier
Biasing Procedure” application note. See assembly for
required external components.
Interface Schematic
3
Vdd,
RFOUT
RF output and DC bias (Vd) for the output stage.
5
Vdd
Supply voltage for amplifier. See assembly diagram for
external components.
Die Bottom
GND
Die Bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
4
4 - 23
HMC-AUH312
v03.0209
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, 0.5 - 65 GHz
Assembly Drawing
MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
4
4 - 24
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-AUH312
v03.0209
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, 0.5 - 65 GHz
Device Mounting
• 1 mil wire bonds are used on Vg1, Vg2 connections to the capacitors.
• 0.5mil x 3mil ribbon bonds are used on all other connections
• Capacitors on Vg1, Vg2 are used to filter low frequency, <800MHz, RF pickup
For best gain flatness and group delay variation, the capacitors off of Vdd, Vg1 and Vg2 should be placed as close
to the die as possible so as to minimize bond wire parasitics. Vdd is especially sensitive to the bond parasitics.
• Silver-filled conductive epoxy is used for die attachment. (Backside of the die should be grounded and the GND pads are
connected to the backside metal through Vias)
Device Operation
• These devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed
during handling, assembly and test.
• The input and output to this device should be AC-coupled.
Device Power Up Instructions
1. Ground the device
2. Bring Vg2 to +1.8V (no drain current)
3. Turn on Vdd to 0V. Bring Vdd to +8V (+5V if a bias tee is used to for Vd bias). +6V is minimum recommended Vdd
4. Turn on Vg1 to 0V. Adjust Vg1 should be adjusted to bring Id to 60mA.
Device Power Down Instructions
1. Reverse the sequence identified above in steps 1 through 4.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4
MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
•
4 - 25
HMC-AUH312
v03.0209
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, 0.5 - 65 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
4
4 - 26
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Ribbon Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity:
strikes.
0.102mm (0.004”) Thick GaAs MMIC
Ribbon Bond
0.076mm
(0.003”)
RF Ground Plane
Follow ESD precautions to protect against ESD
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010” Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-AUH312
v03.0209
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, 0.5 - 65 GHz
Notes
MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP
4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4 - 27
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