HSMS-285x Series Data Sheet Surface Mount Zero Bias Schottky Detector Diodes Description

HSMS-285x Series Data Sheet Surface Mount Zero Bias Schottky Detector Diodes Description
HSMS-285x Series
Surface Mount Zero Bias Schottky Detector Diodes
Data Sheet
Description
Features
Avago’s HSMS-285x family of zero bias Schottky detector
diodes has been designed and optimized for use in small
signal (Pin < -20 dBm) applications at frequencies below
1.5 GHz. They are ideal for RF/ID and RF Tag applications
where primary (DC bias) power is not available.
• Surface Mount SOT-23/SOT-143 Packages
Important Note: For detector applications with input
power levels greater than –20 dBm, use the HSMS-282x
series at frequencies below 4.0 GHz, and the HSMS-286x
series at frequencies above 4.0 GHz. The HSMS-285x series
IS NOT RECOMMENDED for these higher power level
applications.
Available in various package configurations, these detector diodes provide low cost solutions to a wide variety of
design problems. Avago’s manufacturing techniques assure
that when two diodes are mounted into a single package,
they are taken from adjacent sites on the wafer, assuring
the highest possible degree of match.
• Miniature SOT-323 and SOT-363 Packages
• High Detection Sensitivity:
up to 50 mV/µW at 915 MHz
• Low Flicker Noise:
-162 dBV/Hz at 100 Hz
• Low FIT (Failure in Time) Rate*
• Tape and Reel Options Available
• Matched Diodes for Consistent Performance
• Better Thermal Conductivity for Higher Power
Dissipation
• Lead-free Option Available
* For more information see the Surface Mount Schottky
Reliability Data Sheet.
Attention:
Observe precautions for handling electrostatic
sensitive devices.
Pin Connections and Package Marking
2
3
ESD Machine Model (Class A)
6
PLx
1
ESD Human Body Model (Class 0)
5
Refer to Avago Application Note A004R: Electrostatic Discharge
Damage and Control.
4
Notes:
1. Package marking provides orientation and identification.
2. See “Electrical Specifications” for appropriate package
marking.
SOT-23/SOT-143 Package Lead Code
Identification (top view)
SINGLE
3
SERIES
3
1
1
#0
2
#2
UNCONNECTED
PAIR
3
4
1
#5
2
2
SOT-363 Package Lead Code Identification
(top view)
BRIDGE
QUAD
UNCONNECTED
TRIO
6
5
1
2
L
4
6
5
3
1
2
4
P
3
SOT-323 Package Lead Code Identification
(top view)
SINGLE
3
SERIES
3
1
1
B
2
C
2
2
SOT-23/SOT-143 DC Electrical Specifications, TC = +25°C, Single Diode
Part
Number
HSMS-
Package
Marking
Code
Lead
Code
Configuration
2850
2852
2855
P0
P2
P5
0
2
5
Single
Series Pair [1,2]
Unconnected Pair [1,2]
Test
Conditions
Maximum
Forward Voltage
VF (mV)
Maximum
Reverse
Leakage,
IR (µA)
Typical
Capacitance
CT (pF)
150
250
175
0.30
IF = 0.1 mA
IF = 1.0 mA
VR=2V
VR = –0.5 V to –1.0V
f = 1 MHz
Notes:
1. ∆VF for diodes in pairs is 15.0 mV maximum at 1.0 mA.
2. ∆CT for diodes in pairs is 0.05 pF maximum at –0.5 V.
SOT-323/SOT-363 DC Electrical Specifications, TC = +25°C, Single Diode
Part
Number
HSMS-
Package
Marking
Code
Lead
Code
Configuration
285B
285C
285L
285P
P0
P2
PL
PP
B
C
L
P
Single
Series Pair
Unconnected Trio
Bridge Quad
Test
Conditions
Maximum
Forward Voltage
VF (mV)IR (µA)
Maximum
Reverse
Leakage,
CT (pF)
Typical
Capacitance
150
250
175
0.30
IF = 0.1 mA
IF = 1.0 mA
VR=2V
VR = 0.5 V to –1.0V
f = 1 MHz
Notes:
1. ∆VF for diodes in pairs is 15.0 mV maximum at 1.0 mA.
2. ∆CT for diodes in pairs is 0.05 pF maximum at –0.5 V.
RF Electrical Specifications, TC = +25°C, Single Diode
Part Number
HSMS-
Typical Tangential Sensitivity
TSS (dBm) @ f = 915 MHz
Typical Voltage Sensitivity
g (mV/µW) @ f = 915 MHz
Typical Video
Resistance RV (KΩ)
2850
2852
2855
285B
285C
285L
285P
– 57
40
8.0
Test
Conditions
Video Bandwidth = 2 MHz
Zero Bias
Power in = –40 dBm
RL = 100 KΩ, Zero Bias
Zero Bias
3
Absolute Maximum Ratings, TC = +25°C, Single Diode
Symbol
Parameter
Unit
Absolute Maximum[1]
SOT-23/143
SOT-323/363
PIV
Peak Inverse Voltage
V
2.0
2.0
TJ
Junction Temperature
°C
150
150
TSTG
Storage Temperature
°C
-65 to 150
-65 to 150
TOP
Operating Temperature
°C
-65 to 150
-65 to 150
°C/W
500
150
θ jc
Thermal
Resistance[2]
ESD WARNING:
Handling Precautions
Should Be Taken To Avoid
Static Discharge.
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is made
to the circuit board.
Equivalent Linear Circuit Model
HSMS-285x chip
Rj
RS
Cj
RS = series resistance (see Table of SPICE parameters)
C j = junction capacitance (see Table of SPICE parameters)
Rj =
8.33 X 10-5 nT
Ib + Is
where
Ib = externally applied bias current in amps
Is = saturation current (see table of SPICE parameters)
T = temperature, °K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-285x product,
please refer to Application Note AN1124.
SPICE Parameters
Parameter
Units
HSMS-285x
BV
V
3.8
CJ0
pF
0.18
EG
eV
0.69
I BV
A
3 E -4
IS
A
3 E-6
N
1.06
RS
Ω
25
PB (VJ)
V
0.35
PT (XTI)
2
M
0.5
4
Typical Parameters, Single Diode
10000
RL = 100 KΩ
1000
1
0.1
915 MHz
VOLTAGE OUT (mV)
10
100
10
1
10
915 MHz
1
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VF – FORWARD VOLTAGE (V)
Figure 1. Typical Forward Current
vs. Forward Voltage.
3.1
2.9
OUTPUT VOLTAGE (mV)
30
RL = 100 KΩ
VOLTAGE OUT (mV)
IF – FORWARD CURRENT (mA)
100
2.7
FREQUENCY = 2.45 GHz
PIN = -40 dBm
RL = 100 KΩ
2.5
2.3
2.1
1.9
1.7
1.5
1.3
MEASUREMENTS MADE USING A
1.1 FR4 MICROSTRIP CIRCUIT.
0.9
0 10 20 30 40 50 60 70 80 90 100
TEMPERATURE (°C)
Figure 4. Output Voltage vs.
Temperature.
0.1
-50
-40
-30
-20
-10
0
POWER IN (dBm)
Figure 2. +25°C Output Voltage vs.
Input Power at Zero Bias.
0.3
-50
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
-40
-30
POWER IN (dBm)
Figure 3. +25°C Expanded Output
Voltage vs. Input Power. See Figure 2.
5
Applications Information
Introduction
Avago’s HSMS-285x family of
Schottky detector diodes has been
developed specifically for low
cost, high volume designs in small
signal (Pin < -20 dBm) applications at frequencies below
1.5 GHz. At higher frequencies,
the DC biased HSMS-286x family
should be considered.
In large signal power or gain control applications (Pin > -20 dBm),
the HSMS-282x and HSMS-286x
products should be used. The
HSMS-285x zero bias diode is not
designed for large signal designs.
Schottky Barrier Diode
Characteristics
Stripped of its package, a
Schottky barrier diode chip
consists of a metal-semiconductor
barrier formed by deposition of a
metal layer on a semiconductor.
The most common of several
different types, the passivated
diode, is shown in Figure 5, along
with its equivalent circuit.
;;
METAL
PASSIVATION
N-TYPE OR P-TYPE EPI
RS
PASSIVATION
LAYER
SCHOTTKY JUNCTION
Cj
Rj
tance of the diode, controlled by
the thickness of the epitaxial layer
and the diameter of the Schottky
contact. R j is the junction
resistance of the diode, a function
of the total current flowing
through it.
8.33 X 10-5 n T
R j = –––––––––––– = R V – R s
IS + I b
0.026
= ––––– at 25°C
IS + I b
where
n = ideality factor (see table of
SPICE parameters)
T = temperature in °K
IS = saturation current (see
table of SPICE parameters)
Ib = externally applied bias
current in amps
IS is a function of diode barrier
height, and can range from
picoamps for high barrier diodes
to as much as 5 µA for very low
barrier diodes.
The Height of the Schottky Barrier
The current-voltage characteristic
of a Schottky barrier diode at
room temperature is described by
the following equation:
V - IR
I = IS (exp ––––––S - 1)
0.026
(
)
Through the choice of p-type or
n-type silicon, and the selection of
metal, one can tailor the characteristics of a Schottky diode.
Barrier height will be altered, and
at the same time CJ and RS will be
changed. In general, very low
barrier height diodes (with high
values of IS, suitable for zero bias
applications) are realized on
p-type silicon. Such diodes suffer
from higher values of RS than do
the n-type. Thus, p-type diodes are
generally reserved for small signal
detector applications (where very
high values of RV swamp out high
RS) and n-type diodes are used for
mixer applications (where high
L.O. drive levels keep RV low).
Measuring Diode Parameters
The measurement of the five
elements which make up the low
frequency equivalent circuit for a
packaged Schottky diode (see
Figure 6) is a complex task.
Various techniques are used for
each element. The task begins
with the elements of the diode
chip itself.
CP
LP
RV
RS
N-TYPE OR P-TYPE SILICON SUBSTRATE
CROSS-SECTION OF SCHOTTKY
BARRIER DIODE CHIP
EQUIVALENT
CIRCUIT
Figure 5. Schottky Diode Chip.
RS is the parasitic series
resistance of the diode, the sum of
the bondwire and leadframe
resistance, the resistance of the
bulk layer of silicon, etc. RF
energy coupled into RS is lost as
heat — it does not contribute to
the rectified output of the diode.
CJ is parasitic junction capaci-
On a semi-log plot (as shown in
the Avago catalog) the current
graph will be a straight line with
inverse slope 2.3 X 0.026 = 0.060
volts per cycle (until the effect of
RS is seen in a curve that droops
at high current). All Schottky
diode curves have the same slope,
but not necessarily the same value
of current for a given voltage. This
is determined by the saturation
current, IS, and is related to the
barrier height of the diode.
Cj
FOR THE HSMS-285x SERIES
CP = 0.08 pF
LP = 2 nH
Cj = 0.18 pF
RS = 25 Ω
RV = 9 KΩ
Figure 6. Equivalent Circuit of a
Schottky Diode.
RS is perhaps the easiest to
measure accurately. The V-I curve
is measured for the diode under
forward bias, and the slope of the
6
curve is taken at some relatively
high value of current (such as
5 mA). This slope is converted
into a resistance Rd.
0.026
RS = Rd – ––––––
If
RV and CJ are very difficult to
measure. Consider the impedance
of CJ = 0.16 pF when measured at
1 MHz — it is approximately
1 MΩ. For a well designed zero
bias Schottky, RV is in the range of
5 to 25 KΩ, and it shorts out the
junction capacitance. Moving up
to a higher frequency enables the
measurement of the capacitance,
but it then shorts out the video
resistance. The best measurement
technique is to mount the diode in
series in a 50 Ω microstrip test
circuit and measure its insertion
loss at low power levels (around
-20 dBm) using an HP8753C
network analyzer. The resulting
display will appear as shown in
Figure 7.
LP and CP are best measured on
the HP8753C, with the diode
terminating a 50 Ω line on the
input port. The resulting tabulation of S11 can be put into a
microwave linear analysis
program having the five element
equivalent circuit with RV, CJ and
RS fixed. The optimizer can then
adjust the values of LP and CP
until the calculated S11 matches
the measured values. Note that
extreme care must be taken to
de-embed the parasitics of the
50 Ω test fixture.
Detector Circuits
When DC bias is available,
Schottky diode detector circuits
can be used to create low cost RF
and microwave receivers with a
sensitivity of -55 dBm to
-57 dBm.[1] These circuits can take
a variety of forms, but in the most
simple case they appear as shown
in Figure 8. This is the basic
detector circuit used with the
HSMS-285x family of diodes.
-10
50 Ω
INSERTION LOSS (dB)
-15
0.16 pF
50 Ω
-20
In the design of such detector
circuits, the starting point is the
equivalent circuit of the diode, as
shown in Figure 6.
-25
50 Ω 9 KΩ
-30
50 Ω
-35
-40
3
10
100
1000 3000
FREQUENCY (MHz)
Figure 7. Measuring CJ and RV.
At frequencies below 10 MHz, the
video resistance dominates the
loss and can easily be calculated
from it. At frequencies above
300 MHz, the junction capacitance
sets the loss, which plots out as a
straight line when frequency is
plotted on a log scale. Again,
calculation is straightforward.
Of interest in the design of the
video portion of the circuit is the
diode’s video impedance — the
other four elements of the equivalent circuit disappear at all
reasonable video frequencies. In
general, the lower the diode’s
video impedance, the better the
design.
[1]
[2]
RF
IN
Z-MATCH
NETWORK
RF
IN
Z-MATCH
NETWORK
VIDEO
OUT
VIDEO
OUT
Figure 8. Basic Detector Circuits.
The situation is somewhat more
complicated in the design of the
RF impedance matching network,
which includes the package
inductance and capacitance
(which can be tuned out), the
series resistance, the junction
capacitance and the video
resistance. Of these five elements
of the diode’s equivalent circuit,
the four parasitics are constants
and the video resistance is a
function of the current flowing
through the diode.
26,000
RV ≈ ––––––
IS + Ib
where
IS = diode saturation current
in µA
Ib = bias current in µA
Saturation current is a function of
the diode’s design,[2] and it is a
constant at a given temperature.
For the HSMS-285x series, it is
typically 3 to 5 µA at 25°C.
Saturation current sets the detection sensitivity, video resistance
and input RF impedance of the
zero bias Schottky detector diode.
Avago Application Note 923, Schottky Barrier Diode Video Detectors.
Avago Application Note 969, An Optimum Zero Bias Schottky Detector Diode.
7
The most difficult part of the
design of a detector circuit is the
input impedance matching
network. For very broadband
detectors, a shunt 60 Ω resistor
will give good input match, but at
the expense of detection
sensitivity.
When maximum sensitivity is
required over a narrow band of
frequencies, a reactive matching
network is optimum. Such networks can be realized in either
lumped or distributed elements,
depending upon frequency, size
constraints and cost limitations,
but certain general design
principals exist for all types.[3]
Design work begins with the RF
impedance of the HSMS-285x
series, which is given in Figure 9.
2
0.2
0.6
0
65nH
RF
INPUT
VIDEO
OUT
WIDTH = 0.050"
LENGTH = 0.065"
100 pF
WIDTH = 0.015"
LENGTH = 0.600"
TRANSMISSION LINE
DIMENSIONS ARE FOR
MICROSTRIP ON
0.032" THICK FR-4.
Figure 10. 915 MHz Matching
Network for the HSMS-285x Series
at Zero Bias.
A 65 nH inductor rotates the
impedance of the diode to a point
on the Smith Chart where a shunt
inductor can pull it up to the
center. The short length of 0.065"
wide microstrip line is used to
mount the lead of the diode’s
SOT-323 package. A shorted shunt
stub of length <λ/4 provides the
necessary shunt inductance and
simultaneously provides the
return circuit for the current generated in the diode. The impedance of this circuit is given in
Figure 11.
5
RETURN LOSS (dB)
Since no external bias is used
with the HSMS-285x series, a
single transfer curve at any given
frequency is obtained, as shown in
Figure 2.
-5
-10
-15
-20
0.9
0.93
Figure 12. Input Return Loss.
As can be seen, the band over
which a good match is achieved is
more than adequate for 915 MHz
RFID applications.
Voltage Doublers
To this point, we have restricted
our discussion to single diode
detectors. A glance at Figure 8,
however, will lead to the suggestion that the two types of single
diode detectors be combined into
a two diode voltage doubler[4]
(known also as a full wave rectifier). Such a detector is shown in
Figure 13.
RF IN
1
0.915
FREQUENCY (GHz)
Z-MATCH
NETWORK
VIDEO OUT
1 GHz
2
3
Figure 13. Voltage Doubler Circuit.
4
6
5
Figure 9. RF Impedance of the
HSMS-285x Series at -40 dBm.
915 MHz Detector Circuit
Figure 10 illustrates a simple
impedance matching network for
a 915 MHz detector.
[3]
FREQUENCY (GHz): 0.9-0.93
Figure 11. Input Impedance.
The input match, expressed in
terms of return loss, is given in
Figure 12.
Avago Application Note 963, Impedance Matching Techniques for Mixers and Detectors.
Avago Application Note 956-4, Schottky Diode Voltage Doubler.
[5] Avago Application Note 965-3, Flicker Noise in Schottky Diodes.
[4]
Such a circuit offers several
advantages. First the voltage
outputs of two diodes are added
in series, increasing the overall
value of voltage sensitivity for the
network (compared to a single
diode detector). Second, the RF
impedances of the two diodes are
added in parallel, making the job
of reactive matching a bit easier.
8
Such a circuit can easily be
realized using the two series diodes in the HSMS-285C.
Flicker Noise
Reference to Figure 5 will show
that there is a junction of metal,
silicon, and passivation around
the rim of the Schottky contact. It
is in this three-way junction that
flicker noise[5] is generated. This
noise can severely reduce the
sensitivity of a crystal video
receiver utilizing a Schottky
detector circuit if the video
frequency is below the noise
corner. Flicker noise can be
substantially reduced by the
elimination of passivation, but
such diodes cannot be mounted in
non-hermetic packages. p-type
silicon Schottky diodes have the
least flicker noise at a given value
of external bias (compared to
n-type silicon or GaAs). At zero
bias, such diodes can have
extremely low values of flicker
noise. For the HSMS-285x series,
the noise temperature ratio is
given in Figure 14.
NOISE TEMPERATURE RATIO (dB)
15
10
5
0
-5
10
100
1000
10000
100000
FREQUENCY (Hz)
Figure 14. Typical Noise Temperature
Ratio.
Noise temperature ratio is the
quotient of the diode’s noise
power (expressed in dBV/Hz) divided by the noise power of an
ideal resistor of resistance R = RV.
For an ideal resistor R, at 300°K,
the noise voltage can be computed from
v = 1.287 X 10-10 √R volts/Hz
which can be expressed as
20 log10 v
dBV/Hz
Thus, for a diode with RV = 9 KΩ,
the noise voltage is 12.2 nV/Hz or
-158 dBV/Hz. On the graph of
Figure 14, -158 dBV/Hz would
replace the zero on the vertical
scale to convert the chart to one
of absolute noise voltage vs.
frequency.
Diode Burnout
Any Schottky junction, be it an RF
diode or the gate of a MESFET, is
relatively delicate and can be
burned out with excessive RF
power. Many crystal video receivers used in RFID (tag) applications find themselves in poorly
controlled environments where
high power sources may be
present. Examples are the areas
around airport and FAA radars,
nearby ham radio operators, the
vicinity of a broadcast band transmitter, etc. In such environments,
the Schottky diodes of the
receiver can be protected by a device known as a limiter diode.[6]
Formerly available only in radar
warning receivers and other high
cost electronic warfare applications, these diodes have been
adapted to commercial and
consumer circuits.
Avago offers a complete line of
surface mountable PIN limiter
diodes. Most notably, our
HSMP-4820 (SOT-23) can act as a
very fast (nanosecond) powersensitive switch when placed
[6]
between the antenna and the
Schottky diode, shorting out the
RF circuit temporarily and
reflecting the excessive RF energy
back out the antenna.
Assembly Instructions
SOT-323 PCB Footprint
A recommended PCB pad layout
for the miniature SOT-323 (SC-70)
package is shown in Figure 15
(dimensions are in inches). This
layout provides ample allowance
for package placement by automated assembly equipment
without adding parasitics that
could impair the performance.
Figure 16 shows the pad layout
for the six-lead SOT-363.
0.026
0.079
0.039
0.022
Dimensions in inches
Figure 15. Recommended PCB Pad
Layout for Avago’s SC70 3L/SOT-323
Products.
0.026
0.079
0.039
0.018
Dimensions in inches
Figure 16. Recommended PCB Pad
Layout for Avago's SC70 6L/SOT-363
Products.
Avago Application Note 1050, Low Cost, Surface Mount Power Limiters.
9
SMT Assembly
Reliable assembly of surface
mount components is a complex
process that involves many
material, process, and equipment
factors, including: method of
heating (e.g., IR or vapor phase
reflow, wave soldering, etc.)
circuit board material, conductor
thickness and pattern, type of
solder alloy, and the thermal
conductivity and thermal mass of
components. Components with a
low mass, such as the SOT
packages, will reach solder
reflow temperatures faster than
those with a greater mass.
Avago’s diodes have been qualified to the time-temperature
profile shown in Figure 17. This
profile is representative of an IR
reflow type of surface mount
assembly process.
After ramping up from room
temperature, the circuit board
with components attached to it
(held in place with solder paste)
passes through one or more
preheat zones. The preheat zones
increase the temperature of the
board and components to prevent
thermal shock and begin evaporating solvents from the solder
250
TMAX
TEMPERATURE (°C)
200
150
Reflow
Zone
100
Preheat
Zone
Cool Down
Zone
50
0
0
60
120
180
TIME (seconds)
Figure 17. Surface Mount Assembly Profile.
Part Number Ordering Information
Part Number
No. of
Devices
Container
HSMS-285x-TR2*
HSMS-285x-TR1*
10000
3000
13" Reel
7" Reel
HSMS-285x-BLK *
100
antistatic bag
where x = 0, 2, 5, B, C, L and P for HSMS-285x.
For lead-free option, the part number will have the
character "G" at the end, eg. HSMS-285x-TR2G for a
10,000 lead-free reel.
240
300
paste. The reflow zone briefly
elevates the temperature sufficiently to produce a reflow of the
solder.
The rates of change of temperature for the ramp-up and cooldown zones are chosen to be low
enough to not cause deformation
of the board or damage to components due to thermal shock. The
maximum temperature in the
reflow zone (TMAX) should not
exceed 235°C.
These parameters are typical for a
surface mount assembly process
for Avago diodes. As a general
guideline, the circuit board and
components should be exposed
only to the minimum temperatures
and times necessary to achieve a
uniform reflow of solder.
10
Package Dimensions
Outline 23 (SOT-23)
Outline SOT-323 (SC-70 3 Lead)
e2
e1
e1
E
E
E1
XXX
E1
XXX
e
e
L
L
B
B
C
D
C
DIMENSIONS (mm)
DIMENSIONS (mm)
D
A
A1
Notes:
XXX-package marking
Drawings are not to scale
SYMBOL
A
A1
B
C
D
E1
e
e1
e2
E
L
MIN.
0.79
0.000
0.37
0.086
2.73
1.15
0.89
1.78
0.45
2.10
0.45
MAX.
1.20
0.100
0.54
0.152
3.13
1.50
1.02
2.04
0.60
2.70
0.69
Outline 143 (SOT-143)
A
A1
Notes:
XXX-package marking
Drawings are not to scale
SYMBOL
A
A1
B
C
D
E1
e
e1
E
L
MIN.
MAX.
0.80
1.00
0.00
0.10
0.15
0.40
0.10
0.20
1.80
2.25
1.10
1.40
0.65 typical
1.30 typical
1.80
2.40
0.425 typical
Outline SOT-363 (SC-70 6 Lead)
e2
DIMENSIONS (mm)
e1
B1
E
HE
SYMBOL
E
D
HE
A
A2
A1
Q1
e
b
c
L
E
E1
XXX
e
L
B
e
C
DIMENSIONS (mm)
D
A
A1
Notes:
XXX-package marking
Drawings are not to scale
D
MIN.
MAX.
1.15
1.35
1.80
2.25
1.80
2.40
0.80
1.10
0.80
1.00
0.00
0.10
0.10
0.40
0.650 BCS
0.15
0.30
0.10
0.20
0.10
0.30
SYMBOL
A
A1
B
B1
C
D
E1
e
e1
e2
E
L
MIN.
0.79
0.013
0.36
0.76
0.086
2.80
1.20
0.89
1.78
0.45
2.10
0.45
MAX.
1.097
0.10
0.54
0.92
0.152
3.06
1.40
1.02
2.04
0.60
2.65
0.69
Q1
A1
A2
b
c
A
L
11
Device Orientation
For Outlines SOT-23, -323
REEL
TOP VIEW
END VIEW
4 mm
CARRIER
TAPE
8 mm
USER
FEED
DIRECTION
ABC
ABC
ABC
Note: "AB" represents package marking code.
"C" represents date code.
COVER TAPE
For Outline SOT-143
For Outline SOT-363
TOP VIEW
END VIEW
TOP VIEW
4 mm
END VIEW
4 mm
ABC
ABC
ABC
ABC
8 mm
ABC
Note: "AB" represents package marking code.
"C" represents date code.
8 mm
ABC
ABC
ABC
ABC
Note: "AB" represents package marking code.
"C" represents date code.
12
Tape Dimensions and Product Orientation
For Outline SOT-23
P
P2
D
E
P0
F
W
D1
t1
Ko
9° MAX
13.5° MAX
8° MAX
B0
A0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
3.15 ± 0.10
2.77 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.05
0.124 ± 0.004
0.109 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 ± 0.002
PERFORATION
DIAMETER
PITCH
POSITION
D
P0
E
1.50 + 0.10
4.00 ± 0.10
1.75 ± 0.10
0.059 + 0.004
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE
WIDTH
THICKNESS
W
t1
8.00 +0.30 –0.10
0.229 ± 0.013
0.315 +0.012 –0.004
0.009 ± 0.0005
DISTANCE
BETWEEN
CENTERLINE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P2
2.00 ± 0.05
0.079 ± 0.002
For Outline SOT-143
P
D
P2
P0
E
F
W
D1
t1
K0
9° MAX
9° MAX
A0
B0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
3.19 ± 0.10
2.80 ± 0.10
1.31 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.126 ± 0.004
0.110 ± 0.004
0.052 ± 0.004
0.157 ± 0.004
0.039 + 0.010
PERFORATION
DIAMETER
PITCH
POSITION
D
P0
E
1.50 + 0.10
4.00 ± 0.10
1.75 ± 0.10
0.059 + 0.004
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE
WIDTH
THICKNESS
W
t1
8.00 +0.30 –0.10
0.254 ± 0.013
0.315+0.012 –0.004
0.0100 ± 0.0005
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P2
2.00 ± 0.05
0.079 ± 0.002
Tape Dimensions and Product Orientation
For Outlines SOT-323, -363
P
P2
D
P0
E
F
W
C
D1
t1 (CARRIER TAPE THICKNESS)
Tt (COVER TAPE THICKNESS)
K0
An
A0
DESCRIPTION
B0
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
2.40 ± 0.10
2.40 ± 0.10
1.20 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.094 ± 0.004
0.094 ± 0.004
0.047 ± 0.004
0.157 ± 0.004
0.039 + 0.010
PERFORATION
DIAMETER
PITCH
POSITION
D
P0
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE
WIDTH
THICKNESS
W
t1
8.00 ± 0.30
0.254 ± 0.02
0.315 ± 0.012
0.0100 ± 0.0008
COVER TAPE
WIDTH
TAPE THICKNESS
C
Tt
5.4 ± 0.10
0.062 ± 0.001
0.205 ± 0.004
0.0025 ± 0.00004
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P2
2.00 ± 0.05
0.079 ± 0.002
FOR SOT-323 (SC70-3 LEAD)
An
8°C MAX
ANGLE
FOR SOT-363 (SC70-6 LEAD)
An
10°C MAX
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited
in the United States and other countries.
Data subject to change. Copyright © 2006 Avago Technologies, Limited. All rights reserved.
Obsoletes 5989-2494EN
5989-4022EN August 14, 2006
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