Download datasheet for BCR08DS-14A by Renesas Electronics Corporation

Download datasheet for BCR08DS-14A by Renesas Electronics Corporation
Preliminary Datasheet
BCR08DS-14A
R07DS0258EJ0100
Rev.1.00
Mar 30, 2011
Triac
Low Power Use
Features
 Planar Passivation Type
 Surface Mounted Type
 Completed Pb Free
 IT (RMS) : 0.8 A
 VDRM :700 V
 IFGTI, IRGTI, IRGTIII : 5 mA
Outline
RENESAS Package code: PRSP0004ZA-A
(Package name: SOT-223)
2, 4
1.
2.
3.
4.
4
3
3
2
T1 Terminal
T2 Terminal
Gate Terminal
T2 Terminal
1
1
Applications
Washing machine, electric fan, air cleaner, other general purpose control applications
Maximum Ratings
Parameter
Voltage class
14
700
840
Symbol
Repetitive peak off-state voltageNote1
Non- repetitive peak off-state voltageNote1
Notes: 1. Gate open.
VDRM
VDSM
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
0.8
Unit
A
Surge on-state current
ITSM
8
A
I2t
0.26
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
1
0.1
6
0.5
–40 to +125
–40 to +125
0.12
W
W
V
A
°C
°C
g
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
R07DS0258EJ0100 Rev.1.00
Mar 30, 2011
Unit
V
V
Conditions
Commercial frequency, sine full wave
Note3
360° conduction, Tc= 96°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Page 1 of 6
BCR08DS-14A
Preliminary
Electrical Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
IDRM
VTM
—
—
—
—
1.0
2.0
mA
V
Repetitive peak off-state current
On-state voltage
Test conditions
Tj = 125°C, V DRM applied
Tc = 25°C, I TM = 1.2 A,
Instantaneous measurement
Gate trigger voltageNote2



VFGT
VRGT
VRGT
—
—
—
—
—
—
2.0
2.0
2.0
V
V
V
Tj = 25°C, V D = 6 V, RL = 6 ,
RG = 330 
Gate trigger currentNote2



IFGT
IRGT
IRGT
—
—
—
—
—
—
5
5
5
mA
mA
mA
Tj = 25°C, V D = 6 V, RL = 6 ,
RG = 330 
VGD
Rth (j-c)
0.2
—
—
—
—
25
V
°C/W
Tj = 125°C, VD = 1/2 VDRM
Junction to case Note3
(dv/dt)c
0.5
—
—
V/s
Tj = 125°C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T2 tab..
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = –0.4 A/ms
3. Peak off-state voltage
VD = 400 V
R07DS0258EJ0100 Rev.1.00
Mar 30, 2011
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 6
BCR08DS-14A
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
1
10
10
Surge On-State Current (A)
10−1
1.0
1.5
3.0
0
100
4.0
PGM = 1W
PG(AV) =
0.1W
IGM =
0.5A
IFGT I,
IRGT I, IRGT III
VGD = 0.2V
101
102
102
101
103
103
Typical Example
102
101
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
Typical Example
102
–40
2
Gate Trigger Current vs.
Junction Temperature
VGT = 2V
101
4
Gate Characteristics
VGM = 6V
100
3.5
6
Conduction Time (Cycles at 60Hz)
10−1
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
2.5
8
On-State Voltage (V)
101
Gate Voltage (V)
2.0
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
10
0
0
40
80
120
Junction Temperature (°C)
R07DS0258EJ0100 Rev.1.00
Mar 30, 2011
160
Transient Thermal Impedance (°C/W)
On-State Current (A)
Tj = 25°C
102
30
103
104
100
101
25
20
15
10
5
0
10−1
102
Conduction Time (Cycles at 60Hz)
Page 3 of 6
BCR08DS-14A
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
Maximum On-State Power Dissipation
160
1.6
1.2
0.8
360°
Conduction
Resistive,
inductive loads
0.4
0.2
0.4
0.6
1.0
1.2
0
0.2
0.4
0.6
0.8
1.0
Holding Current vs.
Junction Temperature
5
4
3
0
40
80
120
160
3
Typical Example
102
10
1
–40
0
40
80
120
160
Junction Temperature (°C)
Latching Current vs.
Junction Temperature
Breakover Voltage vs.
Junction Temperature
T2+, G–
Typical Example
1
0
T2+, G+
Typical Example T –, G–
2
Typical Example
–40
10
Junction Temperature (°C)
2
−1
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Repetitive Peak Off-State Current vs.
Junction Temperature
Distribution
10
360°
Conduction
Resistive,
inductive loads
40
RMS On-State Current (A)
2
10
60
RMS On-State Current (A)
10
–40
10
80
1.4
0
40
80
120
Junction Temperature (°C)
R07DS0258EJ0100 Rev.1.00
Mar 30, 2011
160
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
10
10
Latching Current (mA)
0.8
Typical Example
10
100
0
0
10
120
20
0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Curves apply regardless of
conduction angle
140
Case Temperature (°C)
On-State Power Dissipation (W)
2.0
160
Typical Example
140
120
100
80
60
40
20
0
–40
0
40
80
120
160
Junction Temperature (°C)
Page 4 of 6
Preliminary
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Commutation Characteristics (Tj=125°C)
101
160
Typical Example
Tj = 125°C
140
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
BCR08DS-14A
120
100
80
60
I Quadrant
III Quadrant
40
20
0
100
101
102
103
III Quadrant
100
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
103
I Quadrant
Minimum
Characteristics
Value
10−1
10−1
Rate of Rise of Off-State Voltage (V/µs)
Gate Trigger Current vs.
Gate Current Pulse Width
Conditions
VD = 200V
IT = 1A
τ = 500µs
Tj = 125°C
Typical Example
100
101
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Characteristics Test Circuits
6
6
Typical Example
IRGT III
A
6V
V
102
A
6V
RG
Test Procedure I
RG
V
Test Procedure II
IFGT I
6
IRGT I
A
6V
101 0
10
10
1
Gate Current Pulse Width (µs)
R07DS0258EJ0100 Rev.1.00
Mar 30, 2011
10
2
V
RG
Test Procedure III
Page 5 of 6
BCR08DS-14A
Preliminary
Package Dimension
Package Name
SOT-223
JEITA Package Code

RENESAS Code
PRSP0004ZA-A
Previous Code

MASS[Typ.]
0.12g
6.6 ± 0.1
Unit: mm
1.8 max.
3.0 ± 0.1
1.0 ± 0.2
7.0 ± 0.3
0.05 ± 0.05
1.75
3.5 ± 0.2
1.75
0.33 ± 0.1
0.74 ± 0.1
0.33 ± 0.1
0.1
2.3
0.1
Ordering Information
Orderable Part Number
BCR08DS-14A-T13#B10
Packing
Embossed Tape
Quantity
3000 pcs.
Remark
Taping direction “T1”
Note : Please confirm the specification about the shipping in detail.
R07DS0258EJ0100 Rev.1.00
Mar 30, 2011
Page 6 of 6
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