Download datasheet for BLF7G22L-160 by NXP Semiconductors N.V.

Download datasheet for BLF7G22L-160 by NXP Semiconductors N.V.
BLF7G22L-160;
BLF7G22LS-160
Power LDMOS transistor
Rev. 2.1 — 2 November 2011
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
IDq
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(mA)
(V)
(W)
(dB)
(%)
(dBc)
2110 to 2170
1300
28
43
18.0
30
32[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
1.2 Features and benefits







Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
BLF7G22L-160; BLF7G22LS-160
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BLF7G22L-160 (SOT502A)
1
drain
2
gate
3
source
1
1
3
[1]
2
2
3
sym112
BLF7G22LS-160 (SOT502B)
1
drain
2
gate
3
source
1
1
3
[1]
2
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF7G22L-160
-
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
SOT502A
BLF7G22LS-160
-
earless flanged LDMOST ceramic package; 2 leads
SOT502B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Min
Max
Unit
VDS
drain-source voltage
Conditions
-
65
V
VGS
gate-source voltage
0.5
+13
V
ID
drain current
-
36
A
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
200
C
5. Thermal characteristics
Table 5.
BLF7G22L-160_7G22LS-160
Product data sheet
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-c)
thermal resistance from junction to case
Tcase = 80 C; PL = 55 W
0.29
K/W
All information provided in this document is subject to legal disclaimers.
Rev. 2.1 — 2 November 2011
© NXP B.V. 2011. All rights reserved.
2 of 18
BLF7G22L-160; BLF7G22LS-160
NXP Semiconductors
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
Tj = 25 C; unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage
Min Typ
Max Unit
VGS = 0 V; ID = 2.16 mA
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 216 mA
1.5
1.9
2.3
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
4.5
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
34
-
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
450
nA
gfs
forward transconductance
VDS = 10 V; ID = 10.8 A
-
20
-
S
RDS(on)
drain-source on-state resistance
VGS = VGS(th) + 3.75 V;
ID = 7.56 A
-
0.06
-

7. Test information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 64 PDPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz;
RF performance at VDS = 28 V; IDq = 1300 mA; Tcase = 25 C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
Parameter
Conditions
Min Typ
Max
Unit
Gp
power gain
PL(AV) = 43 W
16.5 18.0
-
dB
RLin
input return loss
PL(AV) = 43 W
-
15
6.5
dB
D
drain efficiency
PL(AV) = 43 W
27
30
-
%
ACPR5M
adjacent channel power ratio (5 MHz)
PL(AV) = 43 W
-
32
28
dBc
Table 8.
Application information
Mode of operation: 1-carrier W-CDMA; PAR 7.2 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 64 PDPCH; f = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 1300 mA; Tcase = 25 C;
unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter
PARO
Conditions
output peak-to-average ratio PL(AV) = 100 W;
at 0.01 % probability on CCDF
Min
Typ
Max Unit
3.9
4.15 -
dB
7.1 Ruggedness in class-AB operation
The BLF7G22L-160 and BLF7G22LS-160 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 1300 mA; PL = 160 W; f = 2110 MHz.
BLF7G22L-160_7G22LS-160
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2.1 — 2 November 2011
© NXP B.V. 2011. All rights reserved.
3 of 18
BLF7G22L-160; BLF7G22LS-160
NXP Semiconductors
Power LDMOS transistor
7.2 2-Carrier W-CDMA 5 MHz
001aan987
22
50
Gp
(dB)
ηD
(%)
20
40
Gp
18
30
(2)
(1)
16
20
ηD
14
10
12
0
28
33
38
43
48
53
PL (dBm)
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 1.
Power gain and drain efficiency as function of load power; typical values
001aan988
-10
001aan989
-20
ACPR5M
(dBc)
ACPR10M
(dBc)
-20
-30
-30
-40
(1)
-40
(1)
-50
f - 10 MHz
(2)
f - 5 MHz
(2)
-50
f + 10 MHz
-60
f + 5 MHz
-60
-70
28
33
38
43
48
53
PL (dBm)
28
VDS = 28 V; IDq = 1300 mA.
33
(1) f = 2110 MHz
(2) f = 2170 MHz
(2) f = 2170 MHz
Adjacent channel power ratio (5 MHz) as a
function of load power; typical values
BLF7G22L-160_7G22LS-160
Product data sheet
43
48
53
PL (dBm)
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
Fig 2.
38
Fig 3.
Adjacent channel power ratio (10 MHz) as a
function of load power; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 2.1 — 2 November 2011
© NXP B.V. 2011. All rights reserved.
4 of 18
BLF7G22L-160; BLF7G22LS-160
NXP Semiconductors
Power LDMOS transistor
001aan990
40
001aan991
9
RLin
(dB)
PAR
(dB)
30
(1)
6
(1)
(2)
20
3
(2)
10
0
0
28
33
38
43
48
53
PL (dBm)
28
VDS = 28 V; IDq = 1300 mA.
33
38
48
53
PL (dBm)
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(1) f = 2110 MHz
(2) f = 2170 MHz
(2) f = 2170 MHz
Fig 4.
43
Input return loss as function of load power;
typical values
Fig 5.
Peak-to-average power ration as function of
load power; typical values
7.3 2-Carrier W-CDMA 10 MHz
001aan992
22
50
Gp
(dB)
ηD
(%)
20
40
Gp
18
30
(2)
(1)
16
20
ηD
14
10
0
12
28
33
38
43
48
53
PL (dBm)
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 6.
Power gain and drain efficiency as function of load power; typical values
BLF7G22L-160_7G22LS-160
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2.1 — 2 November 2011
© NXP B.V. 2011. All rights reserved.
5 of 18
BLF7G22L-160; BLF7G22LS-160
NXP Semiconductors
Power LDMOS transistor
001aan993
-10
001aan994
-10
ACPR5M
(dBc)
ACPR10M
(dBc)
-30
-30
(1)
(1)
f - 10 MHz
(2)
f - 5 MHz
-50
f + 10 MHz
f + 5 MHz
-70
-70
28
33
38
43
48
53
PL (dBm)
28
VDS = 28 V; IDq = 1300 mA.
33
38
43
48
53
PL (dBm)
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(1) f = 2110 MHz
(2) f = 2170 MHz
(2) f = 2170 MHz
Fig 7.
(2)
-50
Adjacent channel power ratio (5 MHz) as a
function of load power; typical values
Fig 8.
Adjacent channel power ratio (10 MHz) as a
function of load power; typical values
7.4 1-Carrier W-CDMA
001aan995
22
50
Gp
(dB)
ηD
(%)
20
40
Gp
18
30
(2)
(1)
16
20
ηD
14
10
0
12
28
33
38
43
48
53
PL (dBm)
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 9.
Power gain and drain efficiency as function of load power; typical values
BLF7G22L-160_7G22LS-160
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2.1 — 2 November 2011
© NXP B.V. 2011. All rights reserved.
6 of 18
BLF7G22L-160; BLF7G22LS-160
NXP Semiconductors
Power LDMOS transistor
001aan996
-20
001aan997
-40
ACPR5M
(dBc)
ACPR10M
(dBc)
-30
-50
-40
(1)
-50
f - 5 MHz
f - 10 MHz
-60
(2)
(1)
f + 5 MHz
-60
(2)
f + 10 MHz
-70
-70
28
33
38
43
48
53
PL (dBm)
28
VDS = 28 V; IDq = 1300 mA.
33
38
43
48
53
PL (dBm)
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(1) f = 2110 MHz
(2) f = 2170 MHz
(2) f = 2170 MHz
Fig 10. Adjacent channel power ratio (5 MHz) as a
function of load power; typical values
Fig 11. Adjacent channel power ratio (10 MHz) as a
function of load power; typical values
001aan998
8
PAR
(dB)
(1)
6
(2)
4
2
0
28
33
38
43
48
53
PL (dBm)
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 12. Peak-to-average power ration as function of load power; typical values
BLF7G22L-160_7G22LS-160
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2.1 — 2 November 2011
© NXP B.V. 2011. All rights reserved.
7 of 18
BLF7G22L-160; BLF7G22LS-160
NXP Semiconductors
Power LDMOS transistor
7.5 IS-95
001aan999
22
50
Gp
(dB)
ηD
(%)
20
40
Gp
18
30
(2)
(1)
16
20
14
10
ηD
12
0
28
33
38
43
48
53
PL (dBm)
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 13. Power gain and drain efficiency as function of load power; typical values
001aao000
-20
ACPR885k
(dBc)
001aao001
-50
ACPR1980k
(dBc)
-30
-60
-40
(1)
-70
(2)
-50
(3)
(4)
(1)
-60
-80
(2)
(3)
(4)
-90
-70
28
33
38
43
48
53
PL (dBm)
28
33
38
(1) f = 2110 MHz; f + 1980 kHz
(2) f = 2170 MHz; f + 885 kHz
(2) f = 2170 MHz; f + 1980 kHz
(3) f = 2110 MHz; f  885 kHz
(3) f = 2110 MHz; f  1980 kHz
(4) f = 2170 MHz; f  885 kHz
(4) f = 2170 MHz; f  1980 kHz
Fig 14. Adjacent channel power ratio (5 MHz) as a
function of load power; typical values
Product data sheet
48
53
PL (dBm)
VDS = 28 V; IDq = 1300 mA.
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz; f + 885 kHz
BLF7G22L-160_7G22LS-160
43
Fig 15. Adjacent channel power ratio (10 MHz) as a
function of load power; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 2.1 — 2 November 2011
© NXP B.V. 2011. All rights reserved.
8 of 18
BLF7G22L-160; BLF7G22LS-160
NXP Semiconductors
Power LDMOS transistor
001aao002
12
PAR
(dB)
8
(1)
(2)
4
0
28
33
38
43
48
53
PL (dBm)
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 16. Peak-to-average power ration as function of load power; typical values
7.6 CW
001aao003
22
60
Gp
(dB)
ηD
(%)
(2)
20
48
(1)
Gp
18
36
16
24
ηD
14
12
12
0
38
44
50
56
PL (dBm)
VDS = 28 V; IDq = 1300 mA.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 17. Power gain and drain efficiency as function of load power; typical values
BLF7G22L-160_7G22LS-160
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2.1 — 2 November 2011
© NXP B.V. 2011. All rights reserved.
9 of 18
BLF7G22L-160; BLF7G22LS-160
NXP Semiconductors
Power LDMOS transistor
7.7 CW-pulsed
001aao004
22
Gp
(dB)
60
ηD
(%)
(2)
20
48
(1)
Gp
18
36
16
24
ηD
14
12
0
12
38
44
50
56
PL (dBm)
VDS = 28 V; IDq = 1300 mA; tp = 0.10 ms;  = 10 %.
(1) f = 2110 MHz
(2) f = 2170 MHz
Fig 18. Power gain and drain efficiency as function of load power; typical values
BLF7G22L-160_7G22LS-160
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2.1 — 2 November 2011
© NXP B.V. 2011. All rights reserved.
10 of 18
BLF7G22L-160; BLF7G22LS-160
NXP Semiconductors
Power LDMOS transistor
7.8 Test circuit
50.0 mm
50.0 mm
C9
C11
C1
C3
R1
C13
C15
C6
C5
60.0
mm
C8
NXP
BLF7G22L(S)-160
Input Rev 01
60.0
mm
NXP
BLF7G22L-160
Output Rev 01
001aao005
Printed-Circuit Board (PCB): Taconic RF35; r = 3.5; thickness = 0.76 mm; thickness copper plating = 35 m.
See Table 9 for a list of components.
Fig 19. Component layout for class-AB production test circuit
Table 9.
List of components
For test circuit see Figure 19.
Component
BLF7G22L-160_7G22LS-160
Product data sheet
Description
Value
Remarks
C1, C5, C8, C9
multilayer ceramic chip capacitor
68 pF
[1]
C3, C11
multilayer ceramic chip capacitor
820 pF
[2]
C6, C13
multilayer ceramic chip capacitor
10 F
[3]
C15
electrolytic capacitor
470 F; 63 V
R1
SMD resistor
12 
[1]
American Technical Ceramics type 800B or capacitor of same quality.
[2]
American Technical Ceramics type 100A or capacitor of same quality.
[3]
TDK or capacitor of same quality.
All information provided in this document is subject to legal disclaimers.
Rev. 2.1 — 2 November 2011
Philips 1206
© NXP B.V. 2011. All rights reserved.
11 of 18
NXP Semiconductors
BLF7G22L-160; BLF7G22LS-160
Power LDMOS transistor
7.9 Impedance information
Table 10. Typical impedance
Typical values unless otherwise specified.
f
ZS
ZL
MHz


2050
1.39 j4.13
1.41  j3.80
2080
1.67  j3.93
1.38 j3.63
2110
2.01  j3.89
1.35j3.45
2140
2.28j4.09
1.33 j3.28
2170
2.27  j4.47
1.31  j3.12
2200
1.92j4.76
1.28 j2.95
2230
1.42  j4.75
1.26 j2.79
drain
ZL
gate
ZS
001aaf059
Fig 20. Definition of transistor impedance
BLF7G22L-160_7G22LS-160
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2.1 — 2 November 2011
© NXP B.V. 2011. All rights reserved.
12 of 18
BLF7G22L-160; BLF7G22LS-160
NXP Semiconductors
Power LDMOS transistor
8. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D1
U1
B
q
c
C
1
H
L
E1
p
U2
E
w1 M A M B M
A
2
w2 M C M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
p
Q
q
U1
U2
w1
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
3.38
3.12
1.70
1.45
27.94
34.16
33.91
9.91
9.65
0.25
0.51
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.067
1.100
0.057
1.345
1.335
0.390
0.380
0.01
0.02
D
D1
0.045 0.785
0.035 0.745
0.210 0.133
0.170 0.123
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
99-12-28
03-01-10
SOT502A
Fig 21. Package outline SOT502A
BLF7G22L-160_7G22LS-160
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2.1 — 2 November 2011
© NXP B.V. 2011. All rights reserved.
13 of 18
BLF7G22L-160; BLF7G22LS-160
NXP Semiconductors
Power LDMOS transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D1
c
U1
1
L
H
E1
U2
E
2
w2 M D M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
Q
U1
U2
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
1.70
1.45
20.70
20.45
9.91
9.65
0.25
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.045 0.785
0.035 0.745
0.210
0.170
0.067 0.815
0.057 0.805
D
D1
REFERENCES
IEC
JEDEC
JEITA
0.390
0.010
0.380
EUROPEAN
PROJECTION
ISSUE DATE
03-01-10
07-05-09
SOT502B
Fig 22. Package outline SOT502B
BLF7G22L-160_7G22LS-160
Product data sheet
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Rev. 2.1 — 2 November 2011
© NXP B.V. 2011. All rights reserved.
14 of 18
BLF7G22L-160; BLF7G22LS-160
NXP Semiconductors
Power LDMOS transistor
9. Abbreviations
Table 11.
Abbreviations
Acronym
Description
3GPP
Third Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
CW
Continuous Wave
DPCH
Dedicated Physical CHannel
ESD
ElectroStatic Discharge
LDMOS
Laterally Diffused Metal Oxide Semiconductor
LDMOST
Laterally Diffused Metal Oxide Semiconductor Transistor
PAR
Peak-to-Average power Ratio
PDPCH
transmission Power of the Dedicated Physical CHannel
RF
Radio Frequency
SMD
Surface Mounted Device
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
10. Revision history
Table 12.
Revision history
Document ID
Release date
BLF7G22L-160_7G22LS-160 v.2.1 20111102
Modifications:
BLF7G22L-160_7G22LS-160 v.2
Modifications:
BLF7G22L-160_7G22LS-160 v.1
BLF7G22L-160_7G22LS-160
Product data sheet
•
Change
notice
Supersedes
Product data sheet
-
BLF7G22L-160_7G22LS-160 v.2
Table 3: amended package descriptions
20111020
•
•
Data sheet status
Product data sheet
-
BLF7G22L-160_7G22LS-160 v.1
The status of this document has been changed to Product data sheet
Table 7 on page 3: the minimum value for D has been changed
20110427
Preliminary data sheet -
All information provided in this document is subject to legal disclaimers.
Rev. 2.1 — 2 November 2011
-
© NXP B.V. 2011. All rights reserved.
15 of 18
BLF7G22L-160; BLF7G22LS-160
NXP Semiconductors
Power LDMOS transistor
11. Legal information
11.1
Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Definition
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
11.3
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
BLF7G22L-160_7G22LS-160
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2.1 — 2 November 2011
© NXP B.V. 2011. All rights reserved.
16 of 18
NXP Semiconductors
BLF7G22L-160; BLF7G22LS-160
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
11.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF7G22L-160_7G22LS-160
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2.1 — 2 November 2011
© NXP B.V. 2011. All rights reserved.
17 of 18
NXP Semiconductors
BLF7G22L-160; BLF7G22LS-160
Power LDMOS transistor
13. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
2-Carrier W-CDMA 5 MHz . . . . . . . . . . . . . . . . 4
2-Carrier W-CDMA 10 MHz . . . . . . . . . . . . . . . 5
1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
IS-95 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
CW-pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Impedance information . . . . . . . . . . . . . . . . . . 12
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15
Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Contact information. . . . . . . . . . . . . . . . . . . . . 17
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 2 November 2011
Document identifier: BLF7G22L-160_7G22LS-160
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