Download datasheet for RFDA2025SQ by RF Micro Devices, Inc.

RFDA2025Digital Controlled

Variable Gain

Amplifier

RFDA2025

DIGITAL CONTROLLED VARIABLE GAIN

AMPLIFIER

Package: MCM, 32-Pin, 5.2mmx5.2mm

Features



500MHz to 2500MHz Operation



6-Bit Digital Step Attenuator



Serial Control Interface



31.5dB Attenuation Range

(0.5dB Step)



High OIP3/P1dB=+43/25dBm



Gain=-20dB to +11.5dB at

2017MHz



Single +5V Supply



Robust 1000V HBM ESD



Footprint Compatible with 32-Pin

5mmx5mm QFN

Applications



Cellular, PCS, 3G Infrastructure



WiBro, WiMax, LTE



High Linearity Power Control

AMPIN

1

GND

GND

ATTOUT

4

2

3

NC

NC

NC

NC

5

6

7

8

32 31 30 29 28 27 26 25

DSA

6-bit SPI

24

23

22

21

20

19

18

17

NC

NC

NC

Vdd

NC

NC

NC

NC

9 10 11 12 13 14 15 16

E-pad

GND

Functional Block Diagram

Product Description

RFMD’s RFDA2025 is a digital controlled variable gain amplifier featuring high linearity over the entire gain control range. The 6-bit digital step attenuator is programmed with a serial mode control interface. The

RFDA2025 is packaged in a small 5.2mmx5.2mm leadless laminate

MCM with plated through thermal vias for ultra low thermal resistance.

The footprint for this module is directly compatible with most 32-pin

5mmx5mm QFNs. The output amplifier is externally matched, allowing for optimum performance over specific bands within 500MHz to 2500MHz.

DS101117

Ordering Information

RFDA2025SQ

RFDA2025SR

RFDA2025TR7

RFDA2025TR13

RFDA2025PCK-410

Sample bag with 25 pieces

7” Reel with 100 pieces



1800 MHz to 2200 MHz PCBA with 5-piece sample bag



GaAs HBT

GaAs MESFET

Optimum Technology Matching® Applied

SiGe BiCMOS

Si BiCMOS





GaAs pHEMT

Si CMOS

InGaP HBT SiGe HBT Si BJT

GaN HEMT

RF MEMS

LDMOS

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at or .

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RFDA2025

Absolute Maximum Ratings

Parameter Rating

Supply Voltage (V

CC

, V

DD

)

Collector Current (I

C

)

Power Dissipation

1

(P

DISS

)

RF Input Power

Operating Temperature (T

CASE

)

Junction Temperature (T

J

)

Storage Temperature

5.5

200

750

20

-40 to +85

150

-40 to +150

ESD Rating (HBM)

Moisture Sensitivity Level

Class 1C

MSL 3

Notes:

1. P

DISS

=V

CC

*I

C

-RF Output Power+RF Input Power

Unit

V mA mW dBm

°C

°C

°C

ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.

RoHS status based on EUDirective2002/95/EC (at time of this document revision).

The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.

Parameter

Frequency Range

Gain (Max Gain State)

Gain Control Range

Step Accuracy

Output IP3

Min.

Specification

Typ.

Max.

500 2500

10.0

11.5

31.5

13.0

±(0.1 +5% attenuation setting)

40 43

Unit

MHz dB dB dB dBm

Output P1dB

Input Return Loss

Output Return Loss

Noise Figure t

RISE

, t

FALL

Amplifier Supply Voltage (V

CC

)

Attenuator Supply Voltage (V

DD

)

Total Supply Current

23

4.75

3.30

25

17

11

7

250

5.00

5.00

5.25

5.25

dBm dB dB dB ns

V

V

90 115 135 mA

Thermal Resistance

Control Interface

87

6 Bit, Serial

°C/W

Control Voltages Low, V

CTL

=0 to 0.8 V

DC

High, V

CTL

=2.0 to V

DD

V

DC

V

Notes:

1. All measurements based on the 1800MHz to 2200MHz Application Circuit, T=25°C

2. V

CC

=V

DD

=+5V, V

CTL

=0/5V

Condition

Attenuation=0dB, 2017MHz

0.5dB LSB, 6 bits

Major state max error

2017MHz, P

OUT

=5dBm/tone, 1MHz spacing

Attenuation=0dB, 2017MHz

2017MHz

2017MHz

2017MHz, Attenuation=0dB

10/90% RF

Sum of currents from V

DD

and V

CC

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DS101117

RFDA2025

Typical Performance - 1.8GHz to 2.2GHz Application Circuit Performance

Gain, Major States, 25°C

Gain (dB) -5

-10

5

0

15

10

-15

-20

-25

1.8

0dB

1dB

4dB

16dB

0.5dB

2dB

8dB

31.5dB

1.9

2.0

Frequency (GHz)

2.1

Input RL, Major States, 25°C

2.2

S21 over Temperature, Max Gain

20

10

0

-10

-20

Gain (dB) -30

-40

-50

-60

-70

-80

0

+25C

-40C

+85C

1 2 3

Freq(GHz)

4 5

Input Return Loss over Temperature, Max Gain

6

0

-5

-10

IRL(dB) -15

-20

-25

-30

1.8

-10

ORL(dB)

-15

0

-5

-20

-25

-30

1.8

0dB

1dB

4dB

16dB

0.5dB

2dB

8dB

31.5dB

1.9

2.0

Frequency (GHz)

2.1

Output RL, Major States, 25°C

2.2

1.9

2.0

Frequency (GHz)

0dB

1dB

4dB

16dB

2.1

0.5dB

2dB

8dB

31.5dB

2.2

0

-5

-10

ORL (dB)

-15

-20

-25

-30

0

0

-5

-10

IRL (dB)

-15

-20

-25

+25C

-40C

+85C

-30

0 1 2 3 4

Frequency (GHz)

5

Output Return Loss over Temperature, Max Gain

6

1 2 3

Frequency (GHz)

4 5

+25C

-40C

+85C

6


DS101117

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RFDA2025


0

-10

-20

-30

Isolation

(dB)

-40

-50

-60

-70

-80

1.8

1

Error (dB)

0

3

2

-1

-2

-3

1.8

1

Error (dB)

0

3

2

-1

-2

-3

1.8

Isolation, Major States, 25°C

1.9

2.0

Frequency (GHz)

0dB

1dB

4dB

16dB

2.1

Attenuation Error, Major States, 25°C

0.5dB

2dB

8dB

31.5dB

2.2

1.9

2.0

Frequency (GHz)

0.5dB

2dB

8dB

31.5dB

2.1

Attenuation Error, Major States, -40°C

1dB

4dB

16dB

2.2

1.9

2.0

Frequency (GHz)

0.5dB

2dB

8dB

31.5dB

2.1

1dB

4dB

16dB

2.2

Isolation over Temperature, Max Gain

0

-10

-20

-30

Isolation

(dB)

-40

-50

-60

-70

-80

0

15

Phase (°)

0

45

30

-15

-30

-45

1.8

+25C

-40C

+85C

1 2 3

Frequency (GHz)

4 5

Attenuation Error, Major States, 85°C

6

1

Error (dB)

0

3

2

-1

-2

-3

1.8

1.9

2.0

Frequency (GHz)

0.5dB

2dB

8dB

31.5dB

2.1

1dB

4dB

16dB

Normalized Phase Error, Major States, 25°C

2.2

1.9

2.0

Frequency (GHz)

0.5dB

2dB

8dB

31.5dB

2.1

1dB

4dB

16dB

2.2


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DS101117

RFDA2025

Typical Performance: 1.8GHz to 2.2GHz Application Circuit Performance

Successive Step Error at 2020MHz

Error

(dB)

1.00

0.75

0.50

0.25

0.00

-0.25

-0.50

-0.75

-1.00

0 4 8 12 16

State

20 24

OIP3 over Temperature, Max Gain

28

+25C

-40C

+85C

32

Error

(dB)

1.0

0.8

0.5

0.3

0.0

-0.3

-0.5

-0.8

-1.0

1.8

48 48

Worst Case Successive Step Error, 25°C

1.9

2.0

Frequency (GHz)

2.1

OIP3, Major States, 25°C

2.2

46

44

OIP3

(dBm)

42

40

38

1.8

27

26

25

P1dB

(dBm)

24

23

22

1.8

1.9

2.0

Frequency (GHz)

2.1

P1dB over Temperature, Max Gain

+25C

-40C

+85C

2.2

1.9

2.0

Frequency (GHz)

2.1

+25C

-40C

+85C

2.2

46

OIP3 (dBm)

44

42

ACPR

(dBc)

40

38

1.8

1.9

2.0

Frequency (GHz)

0dB

1dB

4dB

16dB

2.1

0.5dB

2dB

8dB

2.2

ACPR over Temperature, Max Gain

WCDMA, 64 DPCH, 2017MHz

-40

-45

-50

-55

-60

-65

-70

-75

+25C

-40C

+85C

-80

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Output Channel Power (dBm)


DS101117

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RFDA2025


Noise

Figure

(dB)

10.0

9.5

9.0

8.5

8.0

7.5

7.0

6.5

6.0

5.5

5.0

1.8

Noise Figure over Temperature, Max Gain

1.9

2.0

Frequency (GHz)

2.1

+25C

+85C

2.2

DCIV over Temperature, Max Gain

150

140

130

120

I

CC

(mA)

110

100

90

80

+25C

-40C

+85C

70

4.5

4.6

4.7

4.8

4.9

5.0

5.1

5.2

5.3

5.4

5.5

V

CC

(V)

Truth Table

1

1

1

1

D5

16dB

1

1

0

0

1

0

1

1

D4

8dB

1

1

1

0

DSA Control Bits

0

1

1

1

D3

4dB

1

1

1

0

1

1

1

0

D2

2dB

1

1

1

0

1

1

0

1

D1

1dB

1

1

1

0

1

1

1

1

D0

0.5dB

1

0

1

0

Relative Gain Setting

Max Gain

-0.5dB

-1dB

-2dB

-4dB

-8dB

-16dB

-31.5dB

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DS101117

RFDA2025

Serial Port Interface: SPI Timing Diagram t4 t6 t2 t1 t5 t3

CLK t8

DATA t7

LE t9

DOUT t10

Parameter t1 t6 t7 t8 t9 t10 t2 t3 t4 t5

Programming example – 6 bit

CLK

DATA

MSB

D5 D4 D3 D2 D1

LSB

D0

LE

Specifications: SPI Timing Diagram

Limit Unit

25 MHz max

30

5

5

10

20

20

20

5

5 ns min ns min ns min ns min ns min ns min ns min ns min ns max

Comment

CLK Frequency

CLK High

CLK Low

DATA to CLK Setup Time

DATA to CLK Hold Time

DATA Valid

LE to CLK Setup Time

CLK to LE Setup Time

LE Pulse Width

Output Set

State

Low

High

Control Voltage Table

V

DD

=+3V

0V to 0.8V

2.0 to V

DD

VDD=+5V

0V to 0.8V

2.0 to V

DD

Power Up Programming Truth Table

PUP Attenuator Setting

Low

High

Attenuation at Max, 31.5dB

Attenuation at Min, 0dB

DS101117


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RFDA2025

28

29

30

31

32

24

25

26

27

20

21

22

23

16

17

18

19

12

13

14

15

8

9

10

11

6

7

4

5

Pin

1

2

3

NC

NC

NC

GND

ATTIN

GND

NC

PUP

Function

AMPIN

GND

GND

ATTOUT

NC

NC

NC

Description

Amplifier Input - DC Block Required.

RF/DC Ground Connection.


Digital Attenuator Output - DC Block Required.

No internal connection.







Digital Attenuator Input - DC Block Required.



Power-up programming pin. Low=Max attenuation at power-up (-31.5dB). High=Min attenuation at powerup (0dB).


NC

VDD

NC

NC

NC

NC

NC

NC

Digital Attenuator Supply Voltage.







NC

CLK

DATA

LE


Serial Clock.

Serial Data.

Latch Enable.

GND


AMPOUT/VCC

Amplifier Output and Bias. External Choke, Bypassing and DC Blocks Required.

GND

GND

GND




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DS101117

RFDA2025

J1

RF IN

Evaluation Schematic - 1800MHz to 2200MHz Application Circuit

C12

VCC

C10

C13

AMP

C1

C2

C3

L1

50 Ω µ strip

PUP

C7

R1

NC

NC

GND

ATTIN

GND

NC

PUP

NC

E-pad

GND

GND

GND

GND

AMPOUT

GND

LE

DATA

CLK

RN3

C9

C8

50 Ω µ strip

J2

RF OUT

C4

C5

C6

VDD

Bill of Materials - 1800MHz to 2200MHz Application Circuit

Description Manufacturer Manufacturer’s P/N Reference

Designator

U1 RFMD RFDA2025SB

RFDA2015, PCB

CONN, SMA, END LNCH, FLT, 0.062”

CAP, 1000pF, 10%, 50V, X7R, 0603

CAP, 22pF, 5%, 50V, C0G, 0402

CAP, 1uF, 10%, 16V, X7R, 0805

CAP, 100pF, 5%, 50V, C0G, 0402

CAP, 1.2pF, +/-0.1pF, 50V, C0G, 0402

IND, 18nH, 5%, M/L, 0603

RES, 0 OHM, 0402

RES, 1K, 5%, 1/16W, 0402

RES ARRAY, 4-ELEM, 1K, 5%, SMD 4 X 0402

CAP, 3.3pF, +/-0.1pF, 50V, C0G, 0402

CONN, HDR, ST, PLRZD, 2-PIN, 0.100”

CONN, HDR, ST, PLRZD, 14-PIN, 0.100”

DNP

J1, J2

C2, C5

C3, C7, C8

C1, C6

C4

C9

L1

C10

R1

RN3

C13

P2

P1

C11, C12, RN1, RN2

Emerson Network Power

Murata Electronics

PANASONIC INDUSTRIAL CO

Murata Electronics

PANASONIC INDUSTRIAL CO

Murata Electronics

Toko America, Inc.

Kamaya, Inc

Kamaya, Inc

KOA

Murata Electronics

ITW Pancon

ITW Pancon

RFDA2025

RFDA2015410 (A)

142-0701-821

GRM188R71H102KA01D

ECJ-0EC1H220J

GRM21BR71C105KA01K

ECJ-0EC1H101J

GRM1555C1H1R2BZ01E

LL1608-FSL18NJ

RMC1/16SJPTH

RMC1/16S-102JTH

CN1E4KTTD102J

GRM1555C1H3R3BZ01E

MPSS100-2-C

MPSS100-14-C


DS101117

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RFDA2025

Evaluation PCB - 1800MHz to 2200MHz Application Circuit

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DS101117

Package Drawing

5.2mmx5.2mm Laminate Module

RFDA2025

DA2025

YYWW

Trace Code

Pin 1 Indicator

YY = Year

WW = Week

Trace Code to be assigned by SubCon

DS101117


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