Download datasheet for RFFM3482ETR13X by RF Micro Devices, Inc.

Download datasheet for RFFM3482ETR13X by RF Micro Devices, Inc.

RFFM3482E

2.4GHz TO 2.5GHz SINGLE-BAND

FRONT END MODULE

Package Style: QFN, 16-pin, 3mmx3mmx0.45mm

16 15 14 13

Features

Single Module Radio Front

End

Single Voltage Supply 3.0V to

4.8V

Integrated 2.4GHz to 2.5GHz b/g/n Amplifier, Rx Balun and

Tx/Rx Switch and Directional

Power Detector

P

P

OUT

at

OUT

=17dBm, 11g, OFDM

2.4% EVM and

=21.5dBm, Meeting

11b Mask

Low Height Package Suited for SiP and CoB Designs

Applications

Cellular handsets

Mobile devices

Tablets

Consumer electronics

Gaming

Netbooks/Notebooks

TV/monitors/video

SmartEnergy

TXB 1

GND 2

BT 3

PAEN 4

5 6 7 8

12 BTH SW

11 RX SW

10 TX SW

9 VB

Functional Block Diagram

Product Description

The RFFM3482E is a single-chip integrated front end module (FEM) for high-performance WiFi applications in the 2.4GHz to 2.5GHz ISM band.

The FEM addresses the need for aggressive size reduction for a typical

802.11b/g/n front end design and greatly reduces the number of components outside of the core chipset. The FEM has integrated b/g/n power amplifier, directional power detector, Rx balun, and some Tx filtering. It is also capable of switching between WiFi Rx, WiFi Tx and BTH Rx/Tx operations. The device is provided in a 3mmx3mmx0.45mm, 16-pin package.

This module meets or exceeds the RF front end needs of 802.11b/g/n

WiFi RF systems.

Ordering Information

RFFM3482ETR13X Standard 1-piece

RFFM3482ESQ

Standard 25-piece bag

RFFM3482ESR

RFFM3482ETR7

Standard 100-piece bag

Standard 2500-piece reel

RFFM3482EPCK-41XFully Assembled Evaluation Board and 5 loose sample pieces

GaAs HBT

GaAs MESFET

Optimum Technology Matching® Applied

SiGe BiCMOS

GaAs pHEMT

Si BiCMOS Si CMOS

InGaP HBT SiGe HBT Si BJT

GaN HEMT

BiFET HBT

LDMOS

Prelim DS120109

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.

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RFFM3482E

Absolute Maximum Ratings

Parameter

DC Supply Voltage

Full Specification Temp Range (Full

Spec. Compliant)

Extreme Operating

Temperature Range

(Reduced Performance)

Storage Temperature

Maximum Tx Input Power for 11b (No Damage)

Maximum Tx Input Power for 11g (No Damage)

Moisture Sensitivity

Rating

5.6

-10 to +75

-40 to -10 and +75 to +85

-40 to +150

+10

+10

MSL1

Unit

V

DC

°C

°C

°C dBm dBm

ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.

The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.

RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder.

Bm

Parameter

Min.

Specification

Typ.

Max.

Unit Condition

2.4GHz Transmit Parameters

Compliance

Nominal Conditions

IEEE802.11b, IEEE802.11g,

FCC CFG 15.247, .205, .209

V

CC

=3.6V, PAEN=1.8V pulsed at 1% to 100% duty cycle, Temp=+25°C,

Freq=2.4GHz to 2.5GHz, unless otherwise noted

Frequency

Output Power

2.4

2.5

GHz

EVM* 11g

EVM* 11n

11g

11b

11n

ACP1

ACP2

15.5

20.5

14.5

17

21.5

16

2.4

2.2

-36

-56

3.5

2.8

-33

-53 dBm dBm dBm

%

% dBc dBc

54Mbps, OFDM, 64QAM meeting EVM requirement

1

Measured at 1Mbps meeting ACP1/ACP2 requirements

MCS7, OFDM

RMS, mean, P

OUT(g)

=15.5dBm

RMS, mean, P

OUT(n)

=14.5dBm

P

OUT

=20.5dBm, IEEE802.11b, 11Mbps CCK, 1Mbps

BPSK modulation

P

OUT

=20.5dBm, IEEE802.11b, 11Mbps CCK, 1Mbps

BPSK modulation

Gain

Gain Variation

28

-2

33 38

+2 dB dB

Frequency -1.0

+1.0

dB

*The EVM specification is obtained with a signal generator that has an EVM level

<0.7%.

1. With V cc

>4.2V to 4.8V there will be a 0.5dB degradation in 11g linear output power

Over temperature and voltage

2.4GHz to 2.5GHz

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Prelim DS120109

RFFM3482E

Parameter

2.4GHz Transmit Parameters, cont’d

Power Detect

Voltage Detect

P

OUT

=16dBm

Input Resistance

Input Capacitance

Bandwidth

Sensitivity

0dBm to 7dBm

8dBm to 15dBm

>15dBm

Current Consumption

IEEE802.11g I

CC

IEEE802.11b I

CC

I

PAEN

Leakage

Power Supply

PA EN Voltage ON

PA EN Voltage OFF

PABC Voltage

PABC Current

Input/Output Impedance

Output Load VSWR Ruggedness

Min.

Specification

Typ.

Max.

0

0.27

800

2

10

20

0.31

10

1000

0.8

0.36

5

140

200

160

220

240

2

180

240

400

6

25

3.0

1.6

3.6

1.8

0

4.8

2.0

0.01

0

0

1.0

1.8

50

No damage or permanent

degradation to device

Out of Band Gain (S

21

)

86MHz to 108MHz

776MHz to 894MHz

925MHz to 980MHz

1570MHz to 1580MHz

1805MHz to 1880MHz

1930MHz to 1990MHz

2110MHz to 2170MHz

Thermal Harmonics

20

20

15

38.5

30

20

20

20

Harmonics

Output Return Loss

Output Impedance

Second

Third

Fourth

-13

-33

-43

100

-10

-30

-40

-9

Unit Condition dBr dBr dBr dBr dBr dBr dBr

°C/W mA mA

A

A

A

V

V

V

V mA

V

V k

 pF kHz mV/dB mV/dB mV/dB

<21dBm output power

IEEE802.11g, 54Mbps 64QAM modulation

RFP

OUT

RFP

OUT

V

B

=15.5dBm, 54Mbps IEEE802.11g

=20.5dBm, 11Mbps IEEE802.11b

PA EN=High

V

B

<4.0V all control inputs=“off”, no RF at 25°C

<4.0V all control inputs=“off”, no RF at 85°C

PA is turned ON

PA is turned OFF

Used to drive the PABC current

VSWR=10:1; all phase angles

(V

RAMP

set for P

OUT

<22dBm into 50

 load; load switched to VSWR=10:1)

@ 50

 relative to minimal in-band gain dBm dBm dBm dB

V

CC

=4.8, PAEN=1.8V, C_TX=1.8V, C_RX=C_BT=GND,

P

OUT

=20.5dBm, Modulation=802.11b,

Freq=2.45GHz, DC=100%, T=85°C

RBW=1MHz. Measured at 1Mbps.

4.80GHz to 5.00GHz

7.20GHz to 7.50GHz

No external matching

Prelim DS120109

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3 of 14

RFFM3482E

Parameter

2.4GHz Receive Parameters

Frequency

Insertion Loss

Noise Figure

Passband Ripple

Balun

Amplitude Balance

Phase Balance

Bluetooth Parameters

Frequency

Insertion Loss

Passband Ripple

Input/Output Power P1dB

Output Return Loss

Output Impedance

General Characteristics

Turn-On/Off Time

Antenna Port Impedance

Input

Output

Switch Control Voltage

Low

High

Switch Control Current

Min.

Specification

Typ.

Max.

2.4

-1

-10

2.4

-0.3

20

0

1.6

2.1

1.0

-12

50

50

50

2.5

2.4

2.4

0.3

1

10

2.5

1.4

+0.3

-10

1.0

0.01

2.0

4

Unit

GHz dB dB dB dB

°

V

V

A

Switch Control Speed

ESD

Human Body Model

Charge Device Model

500

750

100 nsec

V

V

*The EVM specification is obtained with a signal generator that has an EVM level

<0.7%.

GHz dB dB dBm dB

Switch and Balun

Relative to 180°

Per control lines, Tx, Rx and BT

Per control line Tx

EIA/JESD22-114A

EIA/JESD22-C101

Condition

SP3T switch, all unused ports terminated into their nominal impedance

No external matching

S

Output stable to within 90% of final gain

 Receive

 Transmit

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Prelim DS120109

Isolation Table

Parameter

WiFi Rx to BT Rx/Tx

WiFi Tx to BT Rx/Tx

WiFi Rx to WiFi Tx

ANT Tx

ANT Rx

Switch Control Logic

Mode

Bluetooth

WiFi Tx

WiFi Rx

Simultaneous BT/RX

Calibration

0

1

0

1

0

1

1

22

22

20

25

25

1

1

1

0

0

0

1

0

0

0

0

1

0

0

29

25

38

45

28

0

0

1

0

1

1

1 dB dB dB dB dB

RFFM3482E

Prelim DS120109

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5 of 14

RFFM3482E

7

8

5

6

Pin

1

2

3

4

9

10

11

12

13

14

15

16

Pkg

Base

Function Description

TXB

RF input for the 802.11b/g/n PA. Input is matched to 50

 and DC block is provided.

GND

BT

PAEN

VB

VB

Ground.

RF bidirectional port for Bluetooth. Input is matched to 50

 and DC block is provided.

Digital enable pin for the 802.11b/g/n PA. This is an active high control. An external bypass capacitor may be needed on the PA EN line for decoupling purposes.

Supply voltage for the 802.11b/g/n PA.

Supply voltage for the 802.11b/g/n PA.

PABC

PDET

Linearity and Efficiency control pin, please see the Theory of Operation for more information.

Power detector voltage for Tx section. PDET voltage varies with output power. May need external decoupling capacitor for module stability. May need external circuitry to bring output voltage to desired level.

Supply voltage for the 802.11b/g/n PA.

VB

TX SW

RX SW

BTH SW

Switch control port. See switch truth table for proper level.

Switch control port. See switch truth table for proper level.

Switch control port. See switch truth table for proper level.

FEM connection to filter and antenna. Port is matched to 50

 and DC block is provided.

ANT

GND

RX+

RX-

GND

Ground.

Receive port for 802.11b/g/n band. Internally matched to 100

 differential. DC block provided.

Receive port for 802.11b/g/n band. Internally matched to 100

 differential. DC block provided.

The center metal base of the QFN package provides DC and RF ground as well as heat sink for the front end module.

Package Drawing

QFN, 16-pin, 3mmx3mmx0.45mm

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Prelim DS120109

Pin Out

TXB 1

GND 2

BT 3

16 15 14 13

12 BTH

 SW

3

 mm x 3 mm x 0.45 mm

11 RX

 SW

10 TX

 SW

PAEN 4 9 VB

5 6 7 8

RFFM3482E

Prelim DS120109

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RFFM3482E

Application Schematic

J3

-RX

50

 strip

50

 strip

50

 strip

J4

+RX

J5

ANT

J1

TX

50

 strip

J2

BT

PAEN

50

 strip

2

3

1

16 15 14 13

12

4

5 6 7

BT SW

RX SW

11

8

10 TX SW

9

C2 1uF

L1 3.3nH

VBATT

C3 1.5nF

RF3482

C1 1.5nF

VBATT

PDET

PABC

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Prelim DS120109

RFFM3482E

J3

-RX

Evaluation Board Schematic

50

 strip

50

 strip

50

 strip

J4

+RX

J5

ANT

J1

TX

50

 strip

J2

BT

PAEN

50

 strip

2

3

1

16 15 14 13

12

4

5 6 7

BT SW

RX SW

11

8

10

L2 3.3nH

TX SW

C2 1uF

(402)

9

VBATT

RF3482

C1 1nF

PDET

PABC

VBATT

Prelim DS120109

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9 of 14

RFFM3482E

Theory of Operation

The RFFM3482E FEM is a single-chip integrated front end module (FEM) for high performance WiFi applications in the 2.4GHz

to 2.5GHz ISM band. The FEM addresses the need for aggressive size reduction for a typical 802.11b/g/n RF front end design, and greatly reduces the number of components outside of the core chipset. Therefore, the footprint and assembly cost of the overall 802.11b/g/n solution is minimized. The FEM has integrated b/g/n power amplifier, power detector, Rx balun, and Tx filtering. Also, it is capable of switching between WiFi Rx, WiFi Tx, and BTH Rx/Tx operations. It has low insertion loss at the

2.4GHz to 2.5GHz WiFi and BTH paths. The device is manufactured in a GaAs pHEMT processes, and provided in a

3mmx3mmx0.45mm, 16-pin package. This module meets or exceeds the RF front end needs of 802.11b/g/n WiFi RF systems.

For best results, the PA circuit layout from the evaluation board should be copied as closely as possible, particularly the ground layout and ground vias. Other configurations may also work, but the design process is much easier and quicker if the layout is copied from the RFFM3482E evaluation board. There is an indicator pin labeled P1 ID that should be left as a no-connect on the PCB. This pin is directly connected to the ground pad of the IC. For the best performance, it is recommended that voltage and RF lines do not cross under this pin. Gerber files of RFMD PCBA designs can be provided on request. The supply voltage lines should present an RF short to the FEM by using bypass capacitors on the VB traces. The RFFM3482E is a very easy part to implement, but care in circuit layout and component selection is always advisable when designing circuits to operate at

2.5GHz. Please contact RFMD Sales or Application Engineering for additional data and guidance.

The RFFM3482E is designed primarily for IEEE802.11 b/g/n WiFi applications where the available supply voltage and current are limited. The RFFM3482E requires a single positive supply voltage (VB), PA enable (PA_EN) supply, efficiency control (PABC), and a positive supply for switch control to simplify bias requirements. The RFFM3482E FEM also has built in power detection.

All inputs and outputs are internally matched to 50

 except the WiFi receive path it is deferential with nominal impedance of

100

 on each pin.

802.11b/g/n Transmit Path

The RFFM3482E has a typical gain of 33dB from 2.4GHz to 2.5GHz, and delivers 16.5dBm typical output power under

54Mbps OFDM modulation, and 21dBm under 1Mbps 11b modulation. The RFFM3482E requires a single positive supply of

3.0V to 4.8V to operate at full specifications. PA control for the 802.11b/g/n band is provided through one bias control input pin (PA_EN). The PA_EN pin requires a regulated supply to maintain nominal bias current. In general, the PABC pin controls acts as an efficiency and linearity control pin. The current or voltage applied at this pin may produce higher linear output power, higher operating current, and higher gain.

Out of Band Rejection

The RFFM3482E contains basic filtering components to produce bandpass responses for the WiFi transmit path. Due to space constraints inside the module, filtering is limited to a few resonant poles on the RF path.

802.11b/g/n Receive Path

The 802.11b/g/n path has a100

 differential impedance with a nominal insertion loss of 2.1dB. The Rx port return loss is

-9dB maximum. Depending on the application, if filtering is required beyond what the RFFM3482E can achieve then additional external filters will need to be added outside of the RFFM3482E.

10 of 14

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Prelim DS120109

RFFM3482E

RFFM3482E Biasing Instructions:

• 802.11b/g/n Transmit (VB compliance=5.5V, 400mA, PA EN compliance=2V, ~450

A)

• Connect the FEM to a signal generator at the input and a spectrum analyzer at the output.

• Bias VB to 3.6V first with PA_EN=0.0V

• Refer to switch operational truth table to set the control lines at the proper levels for WiFi Tx.

• Turn on PA_EN to 1.8V (typ.). Be extremely careful not to exceed 3.0V on the PA_EN pin, or the part may exceed device current limits.

• Turn on PABC to 1.5mA (or 0.6V). For 11b operation Adjust PABC to 1.8mA. This controls the current drawn by the

802.11b/g/n power amplifier and the idle current should rise to ~115mA±20mA for a typical part, but it varies based on the output power desired.

• 802.11 b/g/n Receive

• To Receive WiFi set the switch control lines per the truth table below.

• Bluetooth Receive

To Receive Bluetooth set the switch control lines per the truth table below.

Ibias Table

IEEE 802.11b

IEEE 802.11g

IEEE 802.11n

CCK

54OFDM

MCS7

1.8

1.5

1.5

mA mA mA

Switch Control Logic

Bluetooth

WiFi Tx

WiFi Rx

Simultaneous BT/RX

Calibration

0

1

1

0

0

1

1

1

1

0

0

1

0

1

0

0

0

1

0

0

0

0

1

0

1

1

1

1

Prelim DS120109

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11 of 14

RFFM3482E

PCB Design Requirements

PCB Surface Finish

The PCB surface finish used for RFMD's qualification process is electroless nickel, immersion gold. Typical thickness is 3 microinch to 8 micro-inch gold over 180 micro-inch nickel.

PCB Land Pattern Recommendation *

PCB land patterns for RFMD components are based on IPC-7351 standards and RFMD empirical data. The pad pattern shown has been developed and tested for optimized assembly at RFMD. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended.

PCB Metal Land Pattern

12 of 14

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Prelim DS120109

RFFM3482E

PCB Solder Mask Pattern

Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCB metal land pattern with a 2 mil to 3 mil expansion to accommodate solder mask registration clearance around all pads. The center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask clearance can be provided in the master data or requested from the PCB fabrication supplier.

Thermal Pad and Via Design

The PCB land pattern has been designed with a thermal pad that matches the die paddle size on the bottom of the device.

Thermal vias are required in the PCB layout to effectively conduct heat away from the package. The via pattern has been designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating routing strategies.

The via pattern used for the RFMD qualification is based on thru-hole vias with 0.203mm to 0.330mm finished hole size on a

0.5mm to 1.2mm grid pattern with 0.025mm plating on via walls. If micro vias are used in a design, it is suggested that the quantity of vias be increased by a 4:1 ratio to achieve similar results.

Prelim DS120109

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13 of 14

RFFM3482E

40

35

30

25

20

15

10

1 4

RFFM3482E Performance Plots

Gain versus Output Power

Vcc = 3.0V; T = 25C

EVM versus Output Power

Vcc = 3.0V; T = 25C

7 10 13

Output Power (dBm)

16 19

2412 MHz

2442 MHz

2484 MHz

5

4.5

4

3.5

3

2.5

2

1.5

1

0.5

0

1 4 7 10 13

Output Power (dBm)

16 19

0.35

0.3

0.25

0.2

0.15

0.1

0.05

1

OperaƟng Current versus Output Power

Vcc = 3.0V; T = 25C

4 16 19 7 10 13

Output Power (dBm)

2412 MHz

2442 MHz

2448 MHz

2412 MHz

2442 MHz

2484 MHz

0.5

0.45

0.4

0.35

0.3

0.25

0.2

0.15

0.1

0.05

0

1 4

Pdet versus Output Power

Vcc = 3.0V; T = 25C

7 10 13

Output Power (dBm)

16 19

2412 MHz

2442 MHz

2484 MHz

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Prelim DS120109

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