Download datasheet for RFPA2013SQ by RF Micro Devices, Inc.

RFPA2013
RFPA2013Preliminary
GaAs HBT POWER AMPLIFIER
0.5W, 400MHz to 2700MHz

0.5W Output Power (P1dB)

NF = 3.8dB at 2140MHz

Gain = 15.7dB at 2140MHz

Power-down Capability
NC
1
RFIN
2
RFIN
3
NC
4
VREF
NC
VBIAS
14
13
12 NC
BIAS
CIRCUIT
11 RFOUT/VCC
10 RFOUT/VCC
9
Applications
5
6
7
NC
-60dBc ACPR at 15.5dBm
WCDMA
15
AMP

16
NC
Features
NC
Package: QFN, 16-Pin, 3mm x 3mm
NC
8

PA Stage for Commercial Wireless Infrastructure

2nd or 3rd Stage LNAs
Product Description

Class AB Operation for GSM,
DCS, PCS, UMTS, WiMAX, TDSCDMA, LTE Transceiver Applications
The RFPA2013 is a single-stage GaAs HBT power amplifier specifically designed for
Wireless Infrastructure applications. It offers ultra-linear operation at a comparably
low DC power, making it ideal for next generation radios requiring high efficiency. Its
external matching allows for use across various radio platforms within 400MHz to
2700MHz. The RFPA2013 offers a low noise figure, making it an excellent solution
for 2nd and 3rd stage LNAs.
NC
GaAs Pre-Driver for Base Station
Amplifiers
NC

Functional Block Diagram
Ordering Information
RFPA2013SR
7” Sample reel with 100 pieces
RFPA2013SQ
Sample bag with 25 pieces
RFPA2013TR7
7” Reel with 750 pieces
RFPA2013TR13
13” Reel with 2500 pieces
RFPA2013PCK-410 2110MHz to 2170MHz PCBA with 5-piece sample bag
RFPA2013PCK-411 2600MHz to 2700MHz PCBA with 5-piece sample bag
RFPA2013PCK-412 2550MHz to 2650MHz PCBA with 5-piece sample bag
869MHz to 894MHz PCBA Not Available Online, Contact Product Line Apps
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS120227
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
1 of 19
RFPA2013
Absolute Maximum Ratings
Parameter
Rating
Supply Voltage (VCC, VBIAS)
6.0
DC Supply Current (ICC)
Unit
V
380
mA
CW Input Power, 2:1 Output VSWR
20
dBm
Output Load VSWR at P3dB
5:1
Operating Junction Temperature
160
°C
Operating Temperature Range (TL)
-40 to +85
°C
Storage Temperature
-40 to +150
°C
ESD Rating – Human Body Model (HBM)
Moisture Sensitivity Level
ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Class 1C
MSL-1
Notes:
1. The maximum ratings must all be met simultaneously.
2. PDISS = PDC + PRFIN - PRFOUT
3. TJ = TL + PDISS * RTH
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
VCC = 5.0V, ICQ = 165mA, linear tune
869MHz to 894MHz
Frequency
880
Input Power (PIN)
10
Gain (S21)
MHz
EVB tuned for WCDMA 60dBc linear operation
dBm
Max recommended continuous input power,
VCC < 6.0V, load VSWR < 2:1
21.8
dB
OIP3
41
dBm
15dBm/tone, tone spacing = 1MHz
P1dB
27.5
dBm
EVB tuned for linear operation
Input Return Loss (S11)
14
dB
Output Return Loss (S22)
8
dB
Noise Figure
3.8
dB
WCDMA Channel Power at -55dBc
ACPR
16.5
dBm
3GPP 3.5, test model 1, 64 DPCH
VCC = 5.0V, ICQ = 165mA, linear tune
2110MHz to 2170MHz
Frequency
2140
Input Power (PIN)
16
MHz
EVB tuned for WCDMA 60dBc linear operation
dBm
Max recommended continuous input power,
VCC < 6.0V, load VSWR < 2:1
Gain (S21)
15.7
dB
OIP3
41.5
dBm
15dBm/tone, tone spacing = 1MHz
P1dB
27
dBm
EVB tuned for linear operation
14
dB
10.5
dB
Input Return Loss (S11)
Output Return Loss (S22)
Noise Figure
3.8
dB
WCDMA Channel Power at -55dBc
ACPR
16.5
dBm
2 of 19
3GPP 3.5, test model 1, 64 DPCH
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS120227
RFPA2013
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
VCC = 5.0V, ICQ = 165mA, linear tune
2550MHz to 2650MHz
Frequency
2600
Input Power (PIN)
17
Gain (S21)
MHz
EVB tuned for WCDMA 60dBc linear operation
dBm
Max recommended continuous input power,
VCC < 6.0V, load VSWR < 2:1
14.1
dB
OIP3
41
dBm
15dBm/tone, tone spacing = 1MHz
P1dB
26.8
dBm
EVB tuned for linear operation
Input Return Loss (S11)
12.5
dB
Output Return Loss (S22)
12
dB
Noise Figure
3.4
dB
WCDMA Channel Power at -55dBc
ACPR
16.0
dBm
3GPP 3.5, test model 1, 64 DPCH
2650
MHz
EVB tuned for WCDMA 60dBc linear operation
dBm
Max recommended continuous input power,
VCC < 6.0V, load VSWR < 2:1
VCC = 5.0V, ICQ = 165mA, linear tune
2600MHz to 2700MHz
Frequency
Input Power (PIN)
17
Gain (S21)
OIP3
P1dB
14.4
dB
40
dBm
15dBm/tone, tone spacing = 1MHz
EVB tuned for linear operation
27
dBm
Input Return Loss (S11)
13.5
dB
Output Return Loss (S22)
13.5
dB
Noise Figure
3.4
dB
WCDMA Channel Power at -55dBc
ACPR
16.0
dBm
3GPP 3.5, test model 1, 64 DPCH
Power Supply
Operating Current (Quiescent)
165
Operating Voltage (VCC)
5.0
6.0
mA
6.0
At VBIAS = VCC = 5.0V
V
Max recommended collector voltage
Operating Voltage (VBIAS)
5.0
V
VBIAS = VCC under normal operating conditions
Power Down Current
10
A
VREF = 0V, VBIAS = VCC = 5.0V
Thermal Resistance (RTH) (Junction to EPAD)
60
C/W
DS120227
Quiescent conditions
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
3 of 19
RFPA2013
Typical Performance: 869MHz to 894MHz Application Circuit
4 of 19
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS120227
RFPA2013
Typical Performance: 869MHz to 894MHz Application Circuit
DS120227
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
5 of 19
RFPA2013
Evaluation Board Schematic
869MHz to 894MHz Application Circuit
Evaluation Board Bill of Materials (BOM)
869MHz to 894MHz Application Circuit
Description
Reference Designator
Manufacturer
GaAs HBT Power Amplifier
U1
RFMD
RFPA2013
CAP, 10F, 20%, 10V, TANT-A
C1
Kemet
T491A106M010AT
CAP, 0.1F, 10%, 16V, X7R, 0402
C2
Murata Electronics
GRM155R71C104KA88D
GRM155R71H102KA01D
Evaluation Board
Manufacturer's P/N
PA2013411(A)
CAP, 1000pF, 10%, 50V, X7R, 0402
C3
Murata Electronics
CAP, 10pF, 5%, 50V, C0G, 0402
C4, C6
Murata Electronics
GRM1555C1H100JZ01E
CAP, 100pF, 5%, 50V, C0G, 0402
C5, C8
Murata Electronics
GRM1555C1H101JA01D
C7
Murata Electronics
GRM1555C1H3R6CZ01E
CAP, 3.6pF, ±0.25pF, 50V, C0G, 0402
CONN, SMA, END LNCH, MINI, FLT, 0.068”
J1, J2
Emerson Networks
142-0741-851
IND, 24nH, 5%, W/W, 0603
L1
Coilcraft, Inc.
0603HC-24NXJLW
IND, 12nH, 10%, M/L, 0402
L2
TOKO Inc.
LL1005-FHL12NJ
IND, 5.6nH, ±0.3nH, M/L, 0402
L3
TOKO Inc.
LL1005-FH5N6S
IND, 47nH, 5%, M/L, 0402
L4
TOKO Inc.
LL1005-FH47NJ
IND, 1.8nH, ±0.3nH, M/L, 0402
L5
TOKO Inc.
LL1005-FH1N8S
CONN, HDR, ST, PLRZD, 4-PIN, 0.100”
P1
ITW Pancon
MPSS100-4-C
RES, 0, 0402
R1
KAMAYA, INC
RMC1/16SJPTH
RES, 365, 1%, 1/16W, 0402
R2
PANASONIC INDUSTRIAL CO
ERJ-2RKF3650
RES, 1.0K, 1%, 1/16W, 0402
R3
PANASONIC INDUSTRIAL CO
ERJ-2RKF1001
RES, 130, 5%, 1/16W, 0402
R4
PANASONIC INDUSTRIAL CO
ERJ-2GEJ131
6 of 19
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS120227
RFPA2013
Evaluation Board Assembly Drawing
869MHz to 894MHz Application Circuit
DS120227
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
7 of 19
RFPA2013
Typical Performance: 2110MHz to 2170MHz Application Circuit
8 of 19
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS120227
RFPA2013
Typical Performance: 2110MHz to 2170MHz Application Circuit
Output Power & Icc versus Input Power @ 2140MHz
30
46
25
45
Output Power (dBm)
OIP3 (dBm)
44
43
42
41
40
Pout_25C
Pout_-40C
Pout_85C
Icc_25C
Icc_-40C
Icc_85C
260
240
20
220
15
200
10
180
5
160
Current (mA)
OIP3 versus Frequency (15dBm tones)
47
+25°C
39
-40°C
38
+85°C
37
2.11
140
0
2.12
2.13
2.14
2.15
2.16
2.17
-10
-8
-6
-4
-2
0
4
6
8
10
12
14
16
Input Power (dBm)
Frequency (GHz)
OIP3 versus Output Power (2140MHz)
47
2
ACPR versus WCDMA Output Power (25C)
-40
46
WCDMA_TM1_64DPCH_1C
-45
45
-50
-55
43
ACPR (dBc)
OIP3 (dBm)
44
42
41
-60
-65
40
-70
+25°C
39
2.11GHz
2.14GHz
-40°C
38
-75
+85°C
37
2.17GHz
-80
10
11
12
13
14
15
16
17
18
19
20
8
9
10
11
12
Output Power per Tone (dBm)
13
14
15
16
17
18
19
Channel Power Out (dBm)
ACPR versus WCDMA Output Power (2140MHz)
-40
WCDMA_TM1_64DPCH_1C
-45
-50
ACP (dBc)
-55
-60
-65
-70
+25°C
-40°C
-75
+85°C
-80
8
9
10
11
12
13
14
15
16
17
18
19
Channel Power Out (dBm)
DS120227
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
9 of 19
RFPA2013
Evaluation Board Schematic
2110MHz to 2170MHz Application Circuit
Evaluation Board Bill of Materials (BOM)
2110MHz to 2170MHz Application Circuit
Description
Reference Designator
Manufacturer
GaAs HBT Power Amplifier
U1
RFMD
RFPA2013
CAP, 10F, 20%, 10V, TANT-A
C1
Kemet
T491A106M010AT
Evaluation Board
Manufacturer's P/N
PA2013410(B)
CAP, 0.1F, 10%, 16V, X7R, 0402
C2
Murata Electronics
GRM155R71C104KA88D
CAP, 1000pF, 10%, 50V, X7R, 0402
C3
Murata Electronics
GRM155R71H102KA01D
CAP, 10pF, 5%, 50V, C0G, 0402
C4
Murata Electronics
GRM1555C1H100JZ01E
CAP, 1.2pF, ±1pF, 50V, HI-Q, 0402
C5
Johanson Technology
500R07S1R2BV4TD
CAP, 2pF, ±0.1pF, 50V, C0G, 0402
C6
Murata Electronics
GRM1555C1H2R0BZ01E
CAP, 3pF, ±.1pF, 50V, C0G, 0402
C7
Murata Electronics
GRM1555C1H3R0BZ01E
CAP, 3.9pF, ±0.25pF, 50V, C0G, 0402
C8
Murata Electronics
GRM1555C1H3R9CZ01E
J1, J2
Emerson Networks
142-0741-851
IND, 24nH, 5%, W/W, 0603
L1
Coilcraft, Inc.
0603HC-24NXJLW
CONN, HDR, ST, PLRZD, 4-PIN, 0.100”
P1
ITW Pancon
MPSS100-4-C
RES, 0, 0402
R1
KAMAYA, INC
RMC1/16SJPTH
RES, 56, 5%, 1/16W, 0402
R2
PANASONIC INDUSTRIAL CO
ERJ-2GEJ560
RES, 1.0K, 1%, 1/16W, 0402
R3
PANASONIC INDUSTRIAL CO
ERJ-2RKF1001
RES, 365, 1%, 1/16W, 0402
R4
PANASONIC INDUSTRIAL CO
ERJ-2RKF3650
CONN, SMA, END LNCH, MINI, FLT, 0.068”
DO NOT PLACE (DNP)
10 of 19
R5, R6, C9-C21
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS120227
RFPA2013
Typical Performance: 2550MHz to 2650MHz Application Circuit
DS120227
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
11 of 19
RFPA2013
Typical Performance: 2550MHz to 2650MHz Application Circuit
OIP3 versus Frequency (15dBm Tones)
Output Power & Icc versus Input Power @ 2600MHz
46
+25°C
25
-40°C
45
+85°C
Output Power (dBm)
44
OIP3 (dBm)
260
30
43
42
41
40
39
Pout_25C
Pout_-40C
Pout_85C
Icc_25C
Icc_-40C
Icc_85C
240
20
220
15
200
10
180
5
160
Current (mA)
47
38
37
2.55
0
2.57
2.59
2.61
2.63
2.65
140
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
Input Power (dBm)
Frequency (GHz)
ACPR versus WCDMA Output Power (25C)
OIP3 versus Output Power (2600MHz)
47
-40
+25°C
46
WCDMA_TM1_64DPCH_1C
10.3dB PAR at 0.01%
-45
-40°C
45
+85°C
-50
ACPR (dBc)
OIP3 (dBm)
44
43
42
41
-55
-60
-65
40
2.57GHz
-70
39
2.6GHz
-75
38
37
2.62GHz
-80
10
11
12
13
14
15
16
17
18
19
20
8
9
10
11
Output Power Per Tone (dBm)
12
13
14
15
16
17
18
19
Channel Power Out (dBm)
ACPR versus WCDMA Output Power (2600MHz)
-40
WCDMA_TM1_64DPCH_1C
10.3dB PAR at 0.01%
-45
ACPR (dBc)
-50
-55
-60
-65
-70
+25°C
-40°C
-75
+85°C
-80
8
9
10
11
12
13
14
15
16
17
18
19
Channel Power Out (dBm)
12 of 19
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS120227
RFPA2013
Evaluation Board Schematic
2550MHz to 2650MHz Application Circuit
Evaluation Board Bill of Materials (BOM)
2550MHz to 2650MHz Application Circuit
Description
Reference Designator
Evaluation Board
GaAs HBT Power Amplifier
U1
Manufacturer
Manufacturer's P/N
DDI
PA2013410(B)
RFMD
RFPA2013
CAP, 10F, 20%, 10V, TANT-A
C1
Kemet
T491A106M010AT
CAP, 0.1F, 10%, 16V, X7R, 0402
C2
Murata Electronics
GRM155R71C104KA88D
CAP, 1000pF, 10%, 50V, X7R, 0402
C3
Murata Electronics
GRM155R71H102KA01D
CAP, 10pF, 5%, 50V, C0G, 0402
C4
Murata Electronics
GRM1555C1H100JZ01E
GRM1555C1H330JZ01E
CAP, 33pF, 5%, 50V, C0G, 0402
C6
Murata Electronics
CAP, 0.8pF, +/-0.1pF, 50V, HI-Q, 0402
C7
Johanson Technology
500R07S0R8BV4TD
CAP, 1.2pF, +/-0.1pF, 50V, HI-Q, 0402
C8
Johanson Technology
500R07S1R2BV4TD
CAP, 1.8pF, +/-0.1pF, 50V, HI-Q, 0402
C9, C18
Johanson Technology
500R07S1R8BV4TD
J1-J2
Emerson Networks
142-0741-851
L1
Coilcraft, Inc.
0603HC-24NXJLW
CONN, SMA, END LNCH, MINI, FLT, 0.068"
IND, 24nH, 5%, W/W, 0603
CONN, HDR, ST, PLRZD, 4-PIN, 0.100"
P1
ITW Pancon
MPSS100-4-C
RES, 0Ω, 0402
R1
Kamaya, Inc
RMC1/16SJPTH
RES, 470Ω, 5%, 1/16W, 0402
R2
Kamaya, Inc
RMC1/16S-471JTH
RES, 1K, 5%, 1/16W, 0402
R3
Kamaya, Inc
RMC1/16S-102JTH
R4
Panasonic Industrial Co.
ERJ-2RKF3650X
RES, 365Ω, 1%, 1/16W, 0402
DO NOT PLACE (DNP)
DS120227
C5, C10-C17, C19-C23, R5-R6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
13 of 19
RFPA2013
Typical Performance: 2600MHz to 2700MHz Application Circuit
14 of 19
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS120227
RFPA2013
Typical Performance: 2600MHz to 2700MHz Application Circuit
Output Power & Icc versus Input Power @ 2650MHz
OIP3 versus Frequency (15dBm Tones)
+25°C
46
-40°C
45
25
+85°C
Output Power (dBm)
44
OIP3 (dBm)
260
30
43
42
41
40
Pout_25C
Pout_-40C
Pout_85C
Icc_25C
Icc_-40C
Icc_85C
240
20
220
15
200
10
180
5
160
39
Current (mA)
47
38
0
37
2.60
2.62
2.64
2.66
2.68
2.70
140
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
Input Power (dBm)
Frequency (GHz)
OIP3 versus Output Power (2650MHz)
ACPR versus WCDMA Output Power (25C)
47
-40
+25°C
46
WCDMA_TM1_64DPCH_1C
-45
-40°C
45
+85°C
-50
43
ACPR (dBc)
OIP3 (dBm)
44
42
41
-55
-60
-65
40
-70
2.62GHz
39
2.65GHz
-75
38
37
2.69GHz
-80
10
11
12
13
14
15
16
17
18
19
20
8
9
10
11
12
13
14
15
16
17
18
19
Channel Power Out (dBm)
Output Power Per Tone (dBm)
ACPR versus WCDMA Output Power (2650MHz)
-40
WCDMA_TM1_64DPCH_1C
-45
ACP (dBc)
-50
-55
-60
-65
-70
+25°C
-40°C
-75
+85°C
-80
8
9
10
11
12
13
14
15
16
17
18
19
Channel Power Out (dBm)
DS120227
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
15 of 19
RFPA2013
Evaluation Board Schematic
2600MHz to 2700MHz Application Circuit
Evaluation Board Bill of Materials (BOM)
2600MHz to 2700MHz Application Circuit
Description
Reference Designator
Evaluation Board
Manufacturer
Manufacturer's P/N
DDI
PA2013410(B)
GaAs HBT Power Amplifier
U1
RFMD
RFPA2013
CAP, 10F, 20%, 10V, TANT-A
C1
Kemet
T491A106M010AT
CAP, 0.1F, 10%, 16V, X7R, 0402
C2
Murata Electronics
GRM155R71C104KA88D
CAP, 1000pF, 10%, 50V, X7R, 0402
C3
Murata Electronics
GRM155R71H102KA01D
GRM1555C1H100JZ01E
CAP, 10pF, 5%, 50V, C0G, 0402
C4
Murata Electronics
CAP, 1.8pF, +/-0.1PF, 50V, Hi-Q, 0402
C18
Johanson Technology
500R07S1R8BV4TD
CAP, 33pF, 5%, 50V, C0G, 0402
C6
Murata Electronics
GRM1555C1H330JZ01E
CAP, 0.9pF, +/-0.1pF, 50V, HI-Q, 0402
C7
Johanson Technology
500R07S0R9BV4TD
500R07S2R7BV4TD
CAP, 2.7pF, +/-0.1pF, 50V, HI-Q, 0402
C9
Johanson Technology
J1-J2
Emerson Networks
142-0741-851
IND, 24nH, 5%, W/W, 0603
L1
Coilcraft, Inc.
0603HC-24NXJLW
CONN, HDR, ST, PLRZD, 4-PIN, 0.100"
P1
ITW Pancon
MPSS100-4-C
CONN, SMA, END LNCH, MINI, FLT, 0.068"
RES, 0Ω, 0402
R1
Kamaya, Inc
RMC1/16SJPTH
RES, 470Ω, 5%, 1/16W, 0402
R2
Kamaya, Inc
RMC1/16S-471JTH
RES, 1K, 5%, 1/16W, 0402
R3
Kamaya, Inc
RMC1/16S-102JTH
RES, 365Ω, 1%, 1/16W, 0402
R4
Panasonic Industrial Co.
ERJ-2RKF3650X
DO NOT PLACE (DNP)
16 of 19
C5, C8, C10-C17, C19-C23, R5-R6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS120227
RFPA2013
Evaluation Board Assembly Drawing
For 2140MHz, 2600MHz, 2650MHz Application Circuits
Note: See schematic and BOM for band-specific component requirements. Many components in the drawing above are Do-NotPlace.
DS120227
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
17 of 19
RFPA2013
Pin Names and Description
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
EPAD
Function
NC
RFIN
RFIN
NC
NC
NC
NC
NC
NC
RFOUT/VCC
RFOUT/VCC
NC
VBIAS
NC
VREF
NC
GND
Description
No internal connection. EVB can be ground or no connect.
RF input. External DC block is required.
RF input. External DC block is required.
No internal connection. EVB can be ground or no connect.
No internal connection. EVB can be ground or no connect.
No internal connection. EVB can be ground or no connect.
No internal connection. EVB can be ground or no connect.
No internal connection. EVB can be ground or no connect.
No internal connection. EVB can be ground or no connect.
RF output and collector bias
RF output and collector bias
No internal connection. EVB can be ground or no connect.
Supply voltage for the active bias circuit
No internal connection. EVB can be ground or no connect.
Bias control pin. Can also be used as a power-down pin.
No internal connection. EVB can be ground or no connect.
DC and RF ground. Must be soldered to EVB ground plane over a bed of vias for thermal and RF performance. Solder/epoxy voids under the EPAD will result in excessive junction temperatures causing permanent damage.
3
NC
4
VREF
NC
VBIAS
12 NC
BIAS
CIRCUIT
11 RFOUT/VCC
10 RFOUT/VCC
9
5
6
7
8
NC
RFIN
13
NC
2
14
NC
RFIN
15
NC
1
16
AMP
18 of 19
NC
NC
Pin Out
NC
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS120227
RFPA2013
Package Drawing
Dimensions in millimeters [inches]
Refer to drawing posted at www.rfmd.com for tolerances.
PIN 1 DOT
BY MARKING
3.000±0.050
1.700±0.050
Exp.DAP
PIN #1 IDENTIFICATION
CHAMFER 0.300 X 45°
.375±0.050
3.000±0.050
PA2013
YYWW
Trace Code
.500 Bsc
1.700±0.050
Exp.DAP
.230±0.050
1.500
Ref.
TOP VIEW
BOTTOM VIEW
.850±0.05
0.000-0.050
.203 Ref.
TOP VIEW
YYWW = date code, YY = year, WW = week
Trace Code assigned by SubCon
DS120227
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
19 of 19

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