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RP9 0 1 K SERI ES
Synchronous Step-down DC/DC Converter with VD and VR
NO.EA-156-121225
OUTLINE
The RP901xxxx is a CMOS-based current mode PWM control synchronous step-down DC/DC converter with a voltage detector (VD) and an LDO regulator (VR).
Each of Step-down DC/DC converters is composed of an oscillator, a voltage reference unit, an error amplifier, a switching control circuit, a soft-start circuit, a protection circuit, a UVLO circuit, a switching transistor. Due to the switching elements are built in and synchronous control, a high efficiency step-down DC/DC converter can be made with an inductor and capacitors. To realize high efficiency at light load, automatic PWM/VFM alternative mode can be selected other than the PWM fixed control mode.
As protection circuits, a current limit circuit which limits Lx peak current cycle by cycle and a hiccup mode protection circuit which works if the load current over the limit continues for a certain time
*1 are built in. The output voltage can be preset with 0.05V step in the factory due to the built-in feed back resistance, and the tolerance is
±2%. Since the package is DFN (PLP) 2527-10, high density mounting on board is possible.
Built-in LDO regulator (VR) is composed of a voltage reference unit, a voltage detecting resistor-network, an error amplifier, a short current limit circuit, and a driver transistor. After the soft-start time of the DC/DC converter is over and a specified delay time, LDO starts up. The sequence function is fixed internally
*2
.
Built-in voltage detector (VD) supervises the input voltage or the output of the VR (The reset function works for
UVLO and over-current of the DC/DC converter). The option is preset in the factory. The output type is N-channel open drain. The released delay time is built-in, typ.50ms.
If the junction temperature of the IC is over the limit, the system is reset by the built-in thermal shut-down circuit.
*1) A version: As soon as the load current is over the limit, the system restarts by the protection.
*2) C, D versions: No sequence function
FEATURES
• Input Voltage Range ················································· 4.5V to 5.5V
• Supply Current·························································· Typ. 460µA (at PWM mode)
Typ. 170µA (at light load applied to B, C, D versions)
Step-down DC/DC Converter
• Output Voltage Range ·············································· 1.2V to 1.8V, preset is possible by user’s request
• Output Voltage Tolerance ········································· ±2%
• Oscillator Frequency················································· Typ. 1.2MHz
• Built-in driver ON resistance····································· Typ. P-channel 0.25 , N-channel 0.25 (at V
IN
=5V)
• Soft-start function······················································ Typ. 1ms
• Lx peak current limit function···································· Typ. 1.4A (D version: 1.5A)
• Output Current·························································· Min. 800mA (D version: 900mA)
• Protection Delay Time ·············································· Typ. 0.1ms (applied to B, C, D versions)
• UVLO function ·························································· Typ. 3.5V
• Chip enable function················································· ”H” active
Ver. 1.0
1
RP901K
LDO Regulator
• Output Voltage Range ·············································· 2.5V to 3.3V, preset is possible by user’s request
• Output Voltage Tolerance ········································· ±1.0%
• Output Current ·························································· Min. 600mA
• Start-up delay time···················································· Typ. 2ms (applied to A, B versions)
• Auto-Discharge function at turning off ······················ Discharge resistance Typ.50 (at V
IN
=5V)
VD
• Voltage Detector Threshold Range ·························· 2.0V to 3.0V, preset is possible by user’s request
(A version: VR output voltage is supervised),
3.0V to 5.0V, preset is possible by user’s request
(B, C, D versions: Input voltage is supervised
• Released Delay Time················································ Typ.50ms
• Thermal shutdown circuit·········································· Detecting Temperature: Typ. 165°C,
Released temperature: Typ. 110
°C
• Package···································································· DFN(PLP)2527-10
• External Components ··············································· C
IN
=10.0µF, C
OUT1
=10.0µF, L=4.7µH (DC/DC),
C
OUT2
=2.2µF(VR)
APPLICATION
• Optical Disk Equipment
Ver. 2.5
2
BLOCK DIAGRAMS
A version
PVDD
CE
CHIP
ENABLE
VREF
SOFT
START
RAMP
COMPENSATION
OSCILLATOR
PWM
AVDD
VREF
V
OUT2
CURRENT
PROTECTION
VREF
CURRENT
FEEDBACK
CURRENT
PROTECTION
SWITCHING
CONTROL
UVLO
CE
DELAY CIRCUIT
B/C/D version
PVDD
CE
CHIP
ENABLE
VREF
SOFT
START
RAMP
COMPENSATION
CURRENT
FEEDBACK
OSCILLATOR
CURRENT
PROTECTION
PWM VFM
SWITCHING
CONTROL
UVLO
AVDD
VREF
DELAY CIRCUIT
VREF
V
OUT2
CURRENT
PROTECTION
CE
L
X
V
OUT1
PGND
AGND
V
DOUT
L
X
V
OUT1
PGND
AGND
V
DOUT
RP901K
Ver. 2.5
2
RP901K
SELECTION GUIDE
In the RP901 series, the output voltage combination and function can be designated.
The selection can be made by the alphanumeric serial number as the next example.
Product Code Package Units/ 1 reel
RP901Kxxx
∗-TR
DFN(PLP)2527-10 5,000pcs
Pb free
Yes
Halogen free
Yes xxx: Serial number to describe the voltage combination of DC/DC converter, voltage regulator, and voltage detector.
∗: Function version
A version: DC/DC control type is PWM-fixed, without protection delay time, output current Min.
800mA, VR has start-up delay time to make a sequence. VD supervises the output of VR (Reset is output at UVLO and over current of DC/DC)
B version: DC/DC control type is PWM/VFM automatic mode shift, with protection delay time, output current Min. 800mA, VR has start-up delay time to make a sequence. VD supervises the input voltage.
C version: DC/DC control type is PWM/VFM automatic mode shift, with protection delay time, output current Min. 800mA, VR: without delay time to make a sequence, VD supervises the input voltage.
D version: DC/DC control type is PWM/VFM automatic mode shift, with protection delay time, output current Min. 900mA, VR: without delay time to make a sequence, VD supervises the input voltage.
PIN CONFIGURATION
DFN(PLP)2527-10
10
9
Mark Side
8 7 6
Bottom Side
6 7 8 9 10
1
2 3 4 5
5
4 3 2 1
Steam via
Ver. 2.5
2
RP901K
PIN DESCRIPTIONS
Pin No. Symbol
1 CE
2 V
DOUT
3 AGND
4 PGND
5 L
X
6 PVDD
Chip Enable Pin (”H” active)
Description
VD Output Pin (N-channel open drain output)
Analog Ground Pin
Power Ground Pin
DC/DC Switching Pin
Power Supply Input Pin
8 V
OUT1
9 AVDD
10 V
OUT2
DC/DC Output Pin
Analog Power Supply Input Pin
VR Output Pin
The backside of the package tab is connected to the substrate of the IC (GND). Connect to GND pin
(Recommendation), or solder the tab and left open electrically.
Make short 3pin and 4pin, and make short 6pin and 9pin.
ABSOLUTE MAXIMUM RATINGS
Rating
(GND=0V)
Unit Symbol Item
V
V
IN
CE
PVDD Pin Voltage
AVDD Pin Voltage
CE Pin Voltage
6.5 V
-0.3 to 6.5 V
V
LX
V
OUT1
V
L
X
OUT
Pin Voltage
1 Pin Voltage
-0.3 to V
-0.3 to V
IN
IN
+ 0.3
+ 0.3
V
V
V
V
OUT2
DOUT
Tstg
V
V
OUT
2 Pin Voltage
DOUT
Pin Voltage
P
D
Power
(1)
Dissipation*
(2)
Ta
Operating
Temperature
Storage Temperature
-0.3 to V
IN
+ 0.3
-0.3 to 6.5
1750 (Ta=25
1138 (Ta=25
°C, Tjmax=150°C)
°C, Tjmax=150°C)
-40 to +85
-55 to +125
V
V mW
°C
°C
*
For more information about Power Dissipation and Standard Land Pattern, refer to
PACKAGE INFORMATION
.
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured.
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions.
Ver. 2.5
2
RP901K
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, the measurement is done by an open loop circuit. Unless otherwise specified, V
IN
=V
CE
=5V,
AGND=PGND=0V.
RP901xxx
Symbol Parameter Conditions Min. Max.
Unit
V
IN
4.5 5.5 V
I
I
SS1
SS2
Operating Input Voltage
Supply Current 1
Supply Current 2
(applied to B/C/D version)
V
IN
=V
CE
=5.5V
V
OUT
1=V
SET
x 0.8
V
IN
=V
CE
=5.5V
V
OUT
1=V
SET
x 1.2
V
IN
=5.5V
V
CE
=0V
A version
B/C/D version
460
170
1.0
2.0
5.0
μA
μA
μA
V
CEH
CE Input Voltage ”H”
V
CEL
CE Input Voltage ”L”
T
T
TSD
TSR
Thermal Shutdown
Detector Temperature
Thermal Shutdown
Release Temperature
Junction Temperature
Junction Temperature
1.0
165
110
0.3
V
V
°C
°C
DC/DC SECTION
(Ta=25
°C)
Symbol Parameter Conditions Min. Max.
Unit
I
V
OUT1
Output Voltage 1
ΔV
OUT1
/
ΔTa
Output Voltage 1
Temperature Coefficient
V
IN
-40
°C ≤ Ta ≤ 85°C
±150 ppm/
°C fosc Oscillator V
IN
=5V -20%
LXLEAKH
L
X
leakage Current “H”
I
LXLEAKL
L
X
leakage Current “L”
R
R
ONP
ONN
P-channel transistor
ON resistance
N-channel transistor
ON resistance
Maxduty Maximum Duty Cycle
V
IN
=V
LX
=5.5V, V
CE
V
IN
=5.5V, V
CE
=V
LX
V
V
IN
IN
=5V, I
=5V, I
LX
LX
100 %
I
LXLIM
L
X
Current Limit
V
IN
=V
CE
=5V
A/B/C version
V
IN
=V
CE
=5V
D version
1.0 ms
1.0
1.1
1.4
1.5
A
IN
=V
CE
=5V
0.0 ms
V
UVLO1
V
IN
=V
CE
3.40 3.50 3.60
V
V
UVLO2
Voltage V
IN
=V
CE
3.63 3.73 3.83
V
All test items listed under
ELECTRICAL CHARACTERISTICS
are done under the pulse load condition (Tj
≈Ta=25ºC) except Thermal Shutdown.
Ver. 2.5
2
RP901K
VR SECTION
(Ta=25
°C)
Symbol Parameter Conditions Min. Max.
Unit
I
V
OUT2
LIM2
Output Voltage 2
Current Limit 2
I
SS3
Supply Current 3
ΔV
OUT2
/
ΔI
OUT2
ΔV
OUT2
/
ΔTa
Load Regulation
Output Voltage 2
Temperature Coefficient
I
SC
Short Current Limit
T
VR
(A/B version)
Start-up Timing Delay
T
VR
(C/D Version)
Start-up Delay
R
LOW
For auto discharge at off, N-channel Tr.
ON resistance
V
IN
=5V, I
OUT
=1mA -1.0% V
V
IN
=V
CE
=5.5V
600 mA
60
μA
1mA
-40
V
V
≤ 400mA
°C ≤ Ta ≤ 85°C
OUT2
IN
≤ I
OUT2
=0V
Start from the finish moment of soft start-time of DC/DC converter
Start from UVLO release moment of DC/DC converter
=5V, V
CE
=0V
40 80
±50 mV
Ppm
/
°C
70 mA
2.0 ms
50
μs
50
VD SECTION
(Ta=25
°C)
Symbol Parameter Conditions Min. Max.
Unit
-V
V
DET
Δ-V
DET
/
ΔTa
HYS
VD Detector Threshold
Temperature Coefficient
-40
°C ≤ Ta ≤ 85°C
-2.0% +2.0% V
±40 ppm
/
°C
-V
DET x 0.05
V
50 ms T
PLH
VD Release Delay Time
I
DOUTL
V
DOUT
”L” Output Current V
IN
=2.0V , V
DOUT
All test items listed under
ELECTRICAL CHARACTERISTICS
are done under the pulse load condition (Tj
≈Ta=25ºC) except Thermal Shutdown.
Ver. 2.5
2
TYPICAL APPLICATION AND TECHNICAL NOTES
RP901K
External Components Recommendation
Inductor L1: 4.7
μH (A/B/C Version VLF4014AT-4R7M1R1 TDK
4.7
μH (D Version VLF4014ST-4R7M1R4 TDK
Pull-up Resistance R1: 50k
Capacitors C1: 10
μF Ceramic capacitor (C2012JB0J106K TDK)
C2: 2.2
μF Ceramic capacitor
C3: 10
μF Ceramic capacitor (C2012JB0J106K TDK)
TECHNICAL NOTES ON EXTERNAL COMPONENTS
Place all the external components as close as possible to the IC and make the wiring length as short as possible. Especially, the capacitor between V
IN and GND must be as close as possible to the IC. If the impedance of the power supply and ground is high, the power level of the IC may shift by the switching current and the operation may unstable. Make the power line and the ground line sufficient. Through the power line, the ground line, inductor, L
X
pin, V
OUT line, large current may flow by switching, therefore fully consideration is necessary. The wiring between V
OUT
pin and the inductor, and load and V
OUT
pin must be separated.
PVDD and AVDD must be short and make them close as possible. Place a capacitor as close as possible to
PVDD. If the distance between AVDD and PVDD is long, add another 0.1
μF capacitor between AVDD and
GND.
Capacitance value between VDD and GND should be 10
μF or more and use a low ESR ceramic capacitor.
Use a ceramic capacitor for V
V
OUT2
OUT1
pin, and the capacitor should be 10
μF or more. Use a ceramic capacitor for
pin, and the ceramic capacitor should be 2.2
μF or more.
Choose an inductor with low DCR, and enough permissible current and which is hard to reach magnetic saturation. If the inductance value is too small, at the maximum load, the current flows through Lx transistor and inductor may be beyond the absolute maximum rating. Choose an appropriate inductance value.
If the spike noise of Lx pin is large, place a snubber circuit between Lx and GND (CR serial connection, etc.) to reduce the spike noise. Time constants of CR depend on the actual PCB and decide with the evaluation of the
PCB.
º The performance of the power circuit with the IC depends on the peripheral circuits. In terms of the external components, PCB pattern, and IC, the peripheral circuit should be designed not to exceed beyond ratings
(voltage, current, power).
Ver. 2.5
3
RP901K
STEP-DOWN DC/DC CONVERTERS’ OPERATION AND OUTPUT CURRENT
This explanation is about the general step-down DC/DC converters’ operation.
In the step-down DC/DC converter, when the Lx transistor turns on, at the same time, energy is accumulated into an inductor and when the transistor turns off, the current accumulated in the inductor is released and averaged, then make the energy loss reduced and the output voltage lower than the input voltage is supplied.
Basic Circuit Current flows L
IL
ILmax i1
V
IN
Pch Tr
L
V
OUT
ILmin topen i1 i2
Nch Tr i2
CL
GND ton toff
T 1/fosc
Step1. P-channel transistor turns on, current IL=i1, energy is charged into L, CL is charged and the output current I
OUT is supplied. While the P-channel transistor turns on (t
ON
), and in proportion to IL=i1 is from
IL=ILmin=0 increases and reaches to ILmax.
Step2. P-channel transistor turns off, L keeps IL=ILmax, and turns on the N-channel transistor, current IL=i2 flows.
Step3. IL=i2 decreases gradually, after t
OPEN,
IL=ILmin=0 and N-channel transistor turns off.
However, if the cycle is continuous mode, before IL=ILmin=0, t
OFF time becomes nothing, the next cycle starts and the P-channel transistor turns on, and the N-channel transistor turns off. In this case, ILmin
>0 and charge is remained, and charge is increased from IL=ILmin >0.
In the PWM control, the number of switching in a second (f
OSC
) is fixed, and t
ON is controlled and the output voltage is constantly maintained.
The step-down operation is constant and stable, the current flows through the inductor’s maximum value (ILmax) and the minimum value (ILmin) is same as when the P-channel transistor turns on and off as described above.
Supposed that the difference between ILmax and ILmin is
ΔI,
∆I = ILmax – ILmin = V
OUT
x t
OPEN
/ L = (VIN – VOUT) x t
ON
/ L ···································· Formula 1
Thus,
T = 1 / f
OSC
= t
ON
+ t
OFF duty (%) = t
ON
/ T x 100 = t
ON
x f
OSC
x 100 t
OPEN t
OFF
The left side of the equation describes the current level at turning on, and the right side of the equation describes the current level at turning off.
Ver. 2.5
4
RP901K
OUTPUT CURRENT AND SELECTION OF EXTERNAL COMPONENS
In the general step-down DC/DC converters, the relation between the output current and external components is described as below:
(Supposed that the peak to peak value of the ripple current is “ I
RP
“, On resistance of the L
X transistor, P-channel transistor, N-channel transistor is respectively described as “R
ONP
“ and “R
ONN
“, inductor’s DCR is described as
“ R
L
“)
Supposed that the time when L
X
P-channel transistor turns on is described as “ t
ON
“,
V
IN
= V
OUT
+ (R
ONP
+ R
L
) x I
OUT
+ L x I
RP
/ t
ON
································································ Formula 1
Supposed that the time when L
X
P-channel transistor turns off (N-channel transistor turns on) is described as
“ t
OFF
“,
L x I
RP
/ t
OFF
= (R
ONN
+ R
L
) x I
OUT
+ V
OUT
······································································ Formula 2
Using Formula 1 and Formula 2, and On duty of the P-channel transistor, t
ON
/(t
ON
+ t
OFF
)= D
ON
is solved,
D
ON
=(V
OUT
+ R
ONN
x I
OUT
+ R
L
x I
OUT
) / (V
IN
– R
ONP
x I
OUT
+ R
ONN
x I
OUT
) ···················· Formula 3
Ripple current is
I
RP
= (V
IN
– V
OUT
– R
ONP
x I
OUT
– R
L
x I
OUT
) x D
ON
/ f
OSC
/ L············································ Formula 4
Then the peak current through the inductor and L
X transistor,
ILmax = I
OUT
+ I
RP
/ 2 ····································································································· Formula 5
Decide the peripheral circuits with considering ILmax and input and output conditions.
º The calculation is based on the ideal operation of the PWM continuous mode.
Ver. 2.5
2
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