2SK2796L

2SK2796L
参考資料
2SK2796(L), 2SK2796(S)
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1034-0500
(Previous: ADE-208-534C)
Rev.5.00
Sep 07, 2005
Features
• Low on-resistance
RDS(on) = 0.12 Ω typ.
• 4 V gate drive devices.
• High speed switching
Outline
RENESAS Package code: PRSS0004ZD-A
(Package name: DPAK(L)-(1))
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
4
4
D
1. Gate
2. Drain
3. Source
4. Drain
G
1
1
2 3
Rev.5.00 Sep 07, 2005 page 1 of 8
2
3
S
参考資料
2SK2796(L), 2SK2796(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS
VGSS
ID
Ratings
60
±20
5
20
5
5
2.14
20
150
–55 to +150
ID(pulse)Note1
IDR
IAP Note3
EAR Note3
Pch Note2
Tch
Tstg
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note:
4. Pulse test
Rev.5.00 Sep 07, 2005 page 2 of 8
Symbol
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
60
±20
—
—
1.0
—
—
2.5
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.12
0.16
4.0
180
90
30
9
25
35
55
1.0
40
Max
—
—
10
±10
2.0
0.16
0.25
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VDS = 60 V, VGS = 0
VGS = ±16 V, VDS = 0
ID = 1 mA, VDS = 10 V
ID = 3 A, VGS = 10 V Note4
ID = 3 A, VGS = 4 V Note4
ID = 3 A, VDS = 10 V Note4
VDS = 10V, VGS = 0,
f = 1MHz
VGS = 10 V, ID = 3 A,
RL = 10 Ω
IF = 5A, VGS = 0
IF = 5A, VGS = 0
diF/ dt =50 A/ µs
参考資料
2SK2796(L), 2SK2796(S)
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
100
20
PW
3
1
(1
sh
ot
)
)
°C
5
10 20
50 100
Typical Output Characteristics
Typical Transfer Characteristics
10 V 6 V
5
5V
4V
3.5 V
25°C
Pulse Test
Drain Current ID (A)
–25°C
2
2.5 V
1
4
Tc = 75°C
3
2
1
VDS = 10 V
Pulse Test
VGS = 2 V
2
4
6
8
0
10
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
2.0
Pulse Test
1.6
1.2
0.8
ID = 5 A
0.4
2A
1A
2
4
6
8
10
Gate to Source Voltage VGS (V)
Rev.5.00 Sep 07, 2005 page 3 of 8
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage
VDS (on) (V)
s
Drain to Source Voltage VDS (V)
3
0
m
Case Temperature TC (°C)
3V
0
µs
s
25
Ta = 25°C
0.1
0.2 0.5 1 2
200
µs
=
150
10
0
m
c
(T
4
100
=
n
io
5
50
10
1
t
ra
Operation in
this area is
limited by RDS(on)
0.3
0
Drain Current ID (A)
10
pe
10
10
30
O
Drain Current ID (A)
30
C
D
Channel Dissipation Pch (W)
40
5
Pulse Test
2
1
0.5
VGS = 4 V
0.2
0.1
0.05
0.1
10 V
0.3
1
3
10
30
Drain Current ID (A)
100
参考資料
Forward Transfer Admittance
vs. Drain Current
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance yfs (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
2SK2796(L), 2SK2796(S)
0.5
Pulse Test
0.4
1A
2A
ID = 5 A
0.3
VGS = 4 V
0.2
5A
0.1
1, 2 A
10 V
0
–40
0
40
80
120
160
25°C
2
75°C
1
0.5
0.2
0.1
0.1
VDS = 10 V
Pulse Test
0.5
0.2
1
2
5
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance
vs. Drain to Source Voltage
10
1000
VGS = 0
f = 1 MHz
500
Capacitance C (pF)
200
100
50
20
10
100
0.2
1
5
50
Coss
Crss
0
10
10
20
30
40
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
20
ID = 5 A
VDD = 10 V
25 V
50 V
16
12
VDS
VGS
40
20
0
2
100
Reverse Drain Current IDR (A)
80
60
0.5
Ciss
10
8
4
VDD = 50 V
25 V
10 V
2
4
6
8
Gate Charge Qg (nc)
Rev.5.00 Sep 07, 2005 page 4 of 8
0
10
50
100
Switching Time t (ns)
5
0.1
200
20
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
Gate to Source Voltage VGS (V)
Reverse Recovery Time trr (ns)
Tc = –25°C
5
Case Temperature TC (°C)
500
Drain to Source Voltage VDS (V)
10
td(off)
50
tf
20
tr
td(on)
10
5
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
2
1
0.1
0.2
0.5
1
2
Drain Current ID (A)
5
10
参考資料
2SK2796(L), 2SK2796(S)
8
6
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
(A)
10
Reverse Drain Current IDR
Reverse Drain Current vs.
Source to Drain Voltage
5V
10 V
V GS = 0, –5 V
4
2
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
VSD (V)
Source to Drain Voltage
IAP = 5 A
VDD = 25 V
duty < 0.1 %
Rg > 50 Ω
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3
0.2
0.1
0.05
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 6.25°C/W, Tc = 25°C
0.02
e
uls
1
0.0
0.03
PDM
P
ot
D=
h
1s
PW
T
PW
T
0.01
10 µ
100 µ
1m
10 m
Pulse Width
100 m
10
PW (S)
Avalanche Test Circuit
VDS
Monitor
1
Avalanche Waveform
L
EAR =
1
2
• L • IAP2 •
VDSS
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
D. U. T
VDS
VDD
ID
Vin
15 V
50 Ω
0
Rev.5.00 Sep 07, 2005 page 5 of 8
VDD
参考資料
2SK2796(L), 2SK2796(S)
Switching Time Test Circuit
Switching Time Waveforms
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vout
Vin
10 V
50 Ω
VDD
= 30 V
10%
10%
90%
td(on)
Rev.5.00 Sep 07, 2005 page 6 of 8
10%
tr
90%
td(off)
tf
参考資料
2SK2796(L), 2SK2796(S)
Package Dimensions
RENESAS Code
Package Name
MASS[Typ.]

PRSS0004ZD-A
DPAK(L)-(1) / DPAK(L)-(1)V
0.42g
1.7 ± 0.5
JEITA Package Code
2.3 ± 0.2
0.55 ± 0.1
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
Unit: mm
3.1 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
16.2 ± 0.5
1.2 ± 0.3
2.29 ± 0.5
RENESAS Code
Package Name
MASS[Typ.]
SC-63
PRSS0004ZD-C
DPAK(S) / DPAK(S)V
0.28g
6.5 ± 0.5
5.4 ± 0.5
(0.1)
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
2.5 ± 0.5
(1.2)
1.0 Max.
2.29 ± 0.5
Rev.5.00 Sep 07, 2005 page 7 of 8
(5.1)
(5.1)
(0.1)
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
JEITA Package Code
0.55 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
参考資料
2SK2796(L), 2SK2796(S)
Ordering Information
Part Name
2SK2796L-E
2SK2796STL-E
Quantity
3200 pcs
3000 pcs
Shipping Container
Box (Sack)
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.5.00 Sep 07, 2005 page 8 of 8
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