Taiwan Semiconductors RGP10A R0 (70-004-41)

Taiwan Semiconductors RGP10A R0 (70-004-41)
RGP10A THRU RGP10M
1.0 AMP. Glass Passivated Junction Fast Recovery Rectifiers
Voltage Range
50 to 1000 Volts
Current
1.0 Ampere
DO-41
Features
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High temperature metallurgically bonded constructed
Plastic material used carries Underwriters Laboratory
Classification 94V-0
Glass passivated cavity-free junction
Capable of meeting environmental standards of MIL-S19500
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1.0 ampere operation at TA=55 C with no thermal runaway
Typical IR less than 0.1 uA
High temperature soldering guaranteed:
350°C / 10 seconds, 0.375”(9.5mm) lead length, 5 lbs.,
(2.3kg) tension
Fast switching for high efficiency
Mechanical Data
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Case: JEDEC DO-41 molded plastic over glass body
Lead: Plated Axial leads, solderable per MIL-STD-750,
Lead: Method 2026
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.012 ounce, 0.3 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
RGP RGP RGP RGP
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
10B
10D
10G
RGP
10J
RGP
10K
RGP
10M
Units
10A
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
V
V
V
Maximum Average Forward Rectified Current
.375” (9.5mm) Lead Length @ TA = 55°C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current @ TA=25°C
at Rated DC Blocking Voltage @ TA=150°C
Maximum Reverse Recovery Time ( Note 1 )
TJ=25°C
150
Typical Junction Capacitance ( Note 2 )
1.0
A
30.0
A
1.3
V
5.0
200.0
uA
uA
nS
250
500
15.0
55
-65 to + 175
-65 to + 175
Typical Thermal resistance RÛJA (Note 3)
Operating Temperature Range TJ
Storage Temperature Range TSTG
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A Recover to 0.25A.
Notes: 2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0 Volts.
Notes: 3. Thermal Resistance from Junction to Ambient at 0.375” (9.5mm) Lead Length, P.C.B.
Notes: 3. Mounted.
- 418 -
pF
°C/W
°C
°C
RATINGS AND CHARACTERISTIC CURVES (RGP10A THRU RGP10M)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
+0.5A
(-)
DUT
(+)
50Vdc
(approx)
(-)
PULSE
GENERATOR
(NOTE 2)
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
0
-0.25A
(+)
-1.0A
1cm
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
1.0
10
0.25
0.375" (9.5mm) LEAD LENGTH
25
50
75
100
125
150
175
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PEAK FORWARD SURGE CURRENT. (A)
AMBIENT TEMPERATURE. ( C)
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
20
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
1
0.1
0
Tj=25 C
PULSE WIDTH-300 S
1% DUTY CYCLE
0.01
0.4
0.6
0.8
1.0
1.2
FORWARD VOLTAGE. (V)
1.4
1.6
FIG.6- TYPICAL REVERSE CHARACTERISTICS
10
20
10
0
100
10
1
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL JUNCTION CAPACITANCE
100
JUNCTION CAPACITANCE.(pF)
INSTANTANEOUS FORWARD CURRENT. (A)
0.5
0
SET TIME BASE FOR
5/ 10ns/ cm
RESISTIVE OR
INDUCTIVE LOAD
0.75
Tj=25 0C
10
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
AVERAGE FORWARD CURRENT. (A)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
Tj=125 0C
1
Tj=75 0C
0.1
Tj=25 0C
0.01
0
1
10
100
REVERSE VOLTAGE. (V)
- 419 -
0
20
40
60
80
100
120
PERCENT OF RATED PEAK REVERSE
VOLTAGE. (%)
140
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