TRF1115

TRF1115
TRF1115
www.ti.com
SLWS174B – APRIL 2005 – REVISED SEPTEMBER 2006
2.5-GHz, High Dynamic Range, Low-Noise Down-Converter
FEATURES
•
•
•
•
•
•
20
19
18
17 16
RFAGC
MXRPB
TRF1115
(TOP VIEW)
MXRI
•
DEVICE INFORMATION
GND
•
•
Performs First Down-Conversion in MMDS /
WCS Radio 2300 MHz to 2700 MHz
Integrated Low Noise, Variable Gain Amplifier
Provisions For An External Image Reject /
Band Pass Filter
Differential Mixer Provides Extra Noise
Immunity
Integrated LO Buffer Amplifier
20 dB of Gain With 10 dB of Gain Control
3-dB Noise Figure, Typical
Input Third Order Intercept of 0 dBm, Typical
Input P-1 dB of –5 dBm, Typical
LO Input Power: 3 dBm
RXI
•
GND 1
15 GND
GND 2
14 IFOP
LNAO 3
13 IFON
RES 4
12 GND
LOB 5
11 IFB
In order to provide exceptional image rejection and
extra jammer rejection, the TRF1115 offers a signal
path to an off-chip filter. Specifications are provided
assuming an in-band 1.5-dB loss in this filter. The
TRF1115 includes a differential LO buffer, mixer, and
IF amplifier for improved performance. After the filter,
an on-chip balun converts the signal from
single-ended to differential in order to provide better
noise immunity in the mixer.
6
7
8
9
10
LOP
LON
VDD
VDD
The TRF1115 is the first of two ASICs used in the
receiver
section
of
Texas
Instruments
MMDS/MDS/WCS/802.16x chipset. The TRF1115
down-converts the input frequency to an IF
frequency in the range of 420 MHz to 480 MHz. The
device provides a differential output that passes
through a SAW filter before connecting to a second
down converter chip. (Note: For the best
performance, the Texas Instruments TRF1112
should be used to perform both the second down
conversion and provide the local oscillator for the
TRF1115.)
GND
DESCRIPTION
P0031-03
Figure 1. TRF1115 Pin Out
BPF
LNAO
LNA
Mixer
RXI
VGM
MXRI
VGA
IFOP
IFON
BALUN
Power
Supply
LOP
LON
VDD
RFAGC
AGC
LO Buffer
B0084-03
Figure 2. Block Diagram
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2006, Texas Instruments Incorporated
TRF1115
www.ti.com
SLWS174B – APRIL 2005 – REVISED SEPTEMBER 2006
ABSOLUTE MAXIMUM RATINGS
VALUE
VDD
Positive DC Supply Voltage, VDD
IDD
Current consumption
Pin
RF Input Power
TJ
Pd
UNIT
0.0 to +5.5
V
200
mA
5
dBm
Junction Temperature
200
°C
Power Dissipation
1.1
W
Digital Input Pins
–0.3 to 5.5
θJC
Thermal Resistance Junction to Case (1)
9.1
°C/W
Tstg
Storage Temperature
–40 to 105
°C
Top
Operating Temperature
–40 to 85
°C
260
°C
Lead Temperature (40 sec max)
(1)
Thermal resistance is junction to ambient assuming thermal pad with 16 thermal vias under package metal base. See Recommended
PCB layout.
DC SPECIFICATIONS
PARAMETER
2
TEST CONDITIONS
MIN
TYP
MAX
5
5.25
V
130
180
mA
VDD
Supply Voltage
IDD
Supply Current (Total)
ILNA
Supply Current, LNA, pin 3
ILO
Supply Current, LO, pin 9
IIF
Supply Current, IF
VC
Gain Control Voltage
0
2
IC
Gain Control Current
0
1.2
Pins 10 plus IF drain bias on pins 13 and 14.
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UNIT
30
mA
45
mA
55
mA
V
mA
TRF1115
www.ti.com
SLWS174B – APRIL 2005 – REVISED SEPTEMBER 2006
ELECTRICAL CHARACTERISTICS
Unless otherwise stated VDD = 5.0 V, External Filter loss = 1.5 dB, TA = 25°C
MAX
UNIT
fRF
RF input frequency
PARAMETER
TEST CONDITIONS
2300
MIN
TYP
2700
MHz
fLO
LO input frequency
1820
2220
MHz
fIF
IF output frequency
500
MHz
G
Gain
VC = 0 V
Gain control range
VC > 1.5 V
400
480
16
18
dB
10
dB
GNB
Gaub fkatbess / 6 MHz
0.2
dB
NFHG
Noise figure, high gain
VC = 0 V
3
4
dB
NFLG
Noise figure with AGC on
VC > 1.5 V
6
7
dB
IP-1dB
Input power at 1 dB compression, high
gain
VC = 0 V, Without RF BPF
-6
-2
dBm
IP-1dB
Input power at 1 dB compression with
AGC on
VC > 1.5 V, Without RF BPF
-1
2
dBm
IIP3
Input third order intercept point, high gain
VC = 0 V, Without RF BPF
-3
0
dBm
IIP3
Input third order intercept point with AGC
on
VC > 1.5 V, Without RF BPF
5
8
dBm
ZRF
RF input impedance
Differential
50
Ω
RLRF
RF input return loss
Z = 50 Ω, PLO = 3 dBm, FRF = 2500 to 2700 MHz
10
dB
ZLO
LO input impedance
Differential
PLO
LO input power
Referenced to 100 Ω differential
RLLO
LO input return loss
Differential, with external matching circuit.
LO input = 3 dBm
ZIF
IF output impedance
Differential
RLIF
IF1 output return loss
Differential, with external matching circuit
–7
–10
dB
LO to RF leakage, differential
LO input = 3 dBm, VC = 0 V
–35
–45
dBm
LO to IF1 leakage, differential
LO input = 3 dBm, VC = 0 V
–40
–50
dBm
RF to IF1 isolation, differential
LO input = 3 dBm, VC = 0 V
35
45
dBc
RF to LO insolation, differential
LO input = 3 dBm, VC = 0 V
25
dBc
8
Ω
100
0
3
6
dB
–10
–12
dB
100
Ω
TERMINAL FUNCTIONS
TERMINAL
NO.
NAME
I/O
TYPE
DESCRIPTION
1, 2, 6, 12,
15, 19
GND
3
LNAO
4
RES
Reserved. Do not connect or ground this pin.
5
LOB
Not connected for normal operation. Internal bias for LO buffer. Normal voltage at this pin is
3.0 to 3.2 V. Do not ground this pin or connect.
7
LOP
I
Analog
LO input, Positive, ac coupled internally
8
LON
I
Analog
LO input, Negative, ac coupled internally
Ground
O
Analog/P Output of LNA, before mixer, Also provides DC bias to FET. Apply 5 V bias thru bias
ower
network.
9
VDD
I
Power
DC bias for LO Buffer +5 V
10
VDD
I
Power
DC bias for IF circuit +5 V
11
IFB
13
IFON
O
Analog/P
IF output, negative, and dc bias for IF amplifier. Apply +5 V through bias network.
ower
14
IFOP
O
Analog/P
IF output, Positive, and dc bias for IF amplifier. Apply +5 V through bias network.
ower
Not connected for normal operation. Internal bias for IF circuitry Normal voltage at this pin
is 2.8 to 3.0 V. Do not ground this pin or connect.
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TRF1115
www.ti.com
SLWS174B – APRIL 2005 – REVISED SEPTEMBER 2006
TERMINAL FUNCTIONS (continued)
TERMINAL
NO.
NAME
I/O
TYPE
I
Analog
DESCRIPTION
Input voltage for gain control:
VC = 0 to 1.5 V
Maximum gain at VC = 0 V
Minimum gain at VC = 1.5 V
16
RFAGC
17
MXRPB
18
MXRI
I
Analog
Input to RF mixer, ac coupled, 50 Ω
20
RXI
I
Analog
RF input, ac coupled, 50 Ω
Back
GND
Not connected for normal operation. Internal bias for mixer circuitry. Normal voltage at this
pin is 1.8 V to 2.5 V. Do not ground this pin or connect to any other pin.
Back of package has metal base that must be grounded for thermal and RF performance.
TYPICAL CHARACTERISTICS
TYPICAL DATA
GAIN
vs
FREQUENCY AND CONTROL VOLTAGE AT 25°C
NOISE FIGURE
vs
FREQUENCY AND CONTROL VOLTAGE AT 25°C
25
7
NF with Vc = 1.5 V
Gain at Vc = 0 V
6
20
5
Noise Figure − dB
Gain − dB
Gain at Vc = 0.5 V
15
Gain at Vc = 1 V
10
Gain at Vc = 1.5 V
4
3
NF with Vc = 0 V
NF with Vc = 1 V
2
NF with Vc = 0.5 V
5
1
0
2300 2350 2400 2450 2500 2550 2600 2650 2700
0
2300 2350 2400 2450 2500 2550 2600 2650 2700
f − Frequency − MHz
f − Frequency − MHz
G001
Figure 3.
4
G002
Figure 4.
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TRF1115
www.ti.com
SLWS174B – APRIL 2005 – REVISED SEPTEMBER 2006
TYPICAL CHARACTERISTICS (continued)
INPUT IP3
vs
FREQUENCY AND CONTROL VOLTAGE AT 25°C
10
10
5
5
Input IP3 − dBm
Input P−1dB at Vc = 1.5 V
0
Input P−1dB at Vc = 1 V
−5
Input IP3 at Vc = 1.5 V
0
Input IP3 at Vc = 0 V
−5
Input IP3 at Vc = 1 V
Input IP3 at Vc = 0.5 V
−10
−10
Input P−1dB at Vc = 0.5 V
Input P−1dB at Vc = 0 V
−15
2300 2350 2400 2450 2500 2550 2600 2650 2700
−15
2300 2350 2400 2450 2500 2550 2600 2650 2700
f − Frequency − MHz
f − Frequency − MHz
G003
G004
Figure 5.
Figure 6.
RF AND LO RETURN LOSS AT 25°C
0
−5
RF Return Loss
−10
Return Loss − dB
Input P−12dB − dBm
INPUT P-1dB
vs
FREQUENCY AND CONTROL VOLTAGE AT 25°C
−15
LO Return Loss
−20
−25
−30
−35
−40
2.31 2.36 2.41
2.46 2.51 2.56
2.61 2.66 2.71
f − Frequency − MHz
G005
Figure 7.
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5
TRF1115
www.ti.com
SLWS174B – APRIL 2005 – REVISED SEPTEMBER 2006
RECOMMENDED PCB LAYOUT
2.00
0.50 TYP
0.20 TYP
0.60 TYP
PIN 1
1.00 TYP
2.80
2.00
1.00 TYP
DIA 0.38 TYP
0.25 TYP
2.80
Solder Mask. No Solder Mask Under Chip, On Lead Pads or On Ground Connections.
Notes: 9 Via Holes, Each 0.38 mm.
DIMENSIONS in mm
M0022-04
A.
6
Four layer Board, Starting material: two: 10 mil core FR4 with 1 oz copper, both sides, pressed with 8 mil thick
prepreg. Via plating ½ oz copper plate, final plate White immersion tin. Final thickness: 0.033” to 0.037” thick.
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TRF1115
www.ti.com
SLWS174B – APRIL 2005 – REVISED SEPTEMBER 2006
APPLICATION SCHEMATIC
1
P2
P1
G
G
2
4
Z = 50 W
3
Z = 50 W
RF_IN
Vc
10 pF
(1)
L = 23.9 nH
22 nH
Quarter-wave @ Frf
5
10 pF
IFN
RES
GND
LOB
IFB
LOP
15
10 pF
14
13
7
8
9
0.01 mF
270 nH
22 nH
(2)
IF OUT_NEG
12
11
0.01 mF
6
LO_POS
RFAGC
LNAO
GND
VDD
IFP
GND
VDD
VDD
4
270 nH
GND
VDD
3
IF OUT_POS
16
GND
LON
2
17
MXRPB
GND
Back
1
18
MXRI
19
RXI
Z = 50 W
20
(2)
VDD
10
10 pF
0.01 mF
10 pF
0.01 mF
LO_NEG
S0122-02
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7
TRF1115
www.ti.com
SLWS174B – APRIL 2005 – REVISED SEPTEMBER 2006
APPLICATION INFORMATION
Figure 8. Package Outline: 4 mm x 4 mm LPCC 20-Pin Leadless Package
8
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PACKAGE OPTION ADDENDUM
www.ti.com
5-Feb-2007
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TRF1115IRGPR
ACTIVE
QFN
RGP
20
2500 Green (RoHS &
no Sb/Br)
CU SN
Level-3-260C-168 HR
TRF1115IRGPRG3
ACTIVE
QFN
RGP
20
2500 Green (RoHS &
no Sb/Br)
CU SN
Level-3-260C-168 HR
TRF1115IRGPT
ACTIVE
QFN
RGP
20
250
Green (RoHS &
no Sb/Br)
CU SN
Level-3-260C-168 HR
TRF1115IRGPTG3
ACTIVE
QFN
RGP
20
250
Green (RoHS &
no Sb/Br)
CU SN
Level-3-260C-168 HR
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
19-Mar-2008
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
Diameter Width
(mm) W1 (mm)
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
W
Pin1
(mm) Quadrant
TRF1115IRGPR
QFN
RGP
20
2500
330.0
12.4
4.3
4.3
1.5
8.0
12.0
Q2
TRF1115IRGPT
QFN
RGP
20
250
330.0
12.4
4.3
4.3
1.5
8.0
12.0
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
19-Mar-2008
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TRF1115IRGPR
QFN
RGP
20
2500
340.5
333.0
20.6
TRF1115IRGPT
QFN
RGP
20
250
340.5
333.0
20.6
Pack Materials-Page 2
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