HMC-ALH102
HMC-ALH102
v01.0108
LOW NOISE AMPLIFIERS - CHIP
1
GaAs HEMT MMIC WIDEBAND
LOW NOISE AMPLIFIER, 2 - 20 GHz
Typical Applications
Features
This HMC-ALH102 is ideal for:
Noise Figure: 2.5 dB
• Wideband Communications Receivers
Gain: 11.6 dB @ 10 GHz
• Surveillance Systems
P1dB Output Power: +10 dBm
• Point-to-Point Radios
Supply Voltage: +2V @ 55 mA
• Point-to-Multi-Point Radios
Die Size: 3.0 x 1.435 x 0.1 mm
• Military & Space
• Test Instrumentation
General Description
Functional Diagram
The HMC-ALH102 is a GaAs MMIC HEMT Low Noise
Distributed Amplifier die which operates between
2 and 20 GHz. The amplifier provides 11.6 dB of gain
at 10 GHz, 2.5 dB noise figure and +10 dBm of output power at 1 dB gain compression while requiring
only 55 mA from a +2V supply voltage. The HMCALH102 amplifier is ideal for integration into MultiChip-Modules (MCMs) due to its small size.
Electrical Specifi cations, TA = +25° C, Vdd= 2V [1], Idd = 55mA [2]
Parameter
Min.
Frequency Range
Gain
8
Typ.
Max.
GHz
10
dB
Input Return Loss
15
dB
Output Return Loss
12
dB
10
dBm
Output Power for 1 dB Compression
8
Noise Figure
2.5
dB
Supply Current (Idd)
55
mA
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -1V to +0.3V (Typ. -0.5V) to achieve Idd= 55 mA
1 - 114
Units
2 - 20
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH102
v01.0108
GaAs HEMT MMIC WIDEBAND
LOW NOISE AMPLIFIER, 2 - 20 GHz
1
Noise Figure vs. Frequency
Linear Gain vs. Frequency
16
4
NOISE FIGURE (dB)
GAIN (dB)
12
8
4
3
2
1
0
0
2
6
10
14
18
22
2
6
Input Return Loss vs. Frequency
14
18
22
Output Return Loss vs. Frequency
0
0
-5
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
10
FREQUENCY (GHz)
FREQUENCY (GHz)
-10
-15
-20
-10
-15
LOW NOISE AMPLIFIERS - CHIP
5
-20
-25
-25
2
6
10
14
FREQUENCY (GHz)
18
22
2
6
10
14
18
22
FREQUENCY (GHz)
Note: Measured Performance Characteristics (Typical Performance at 25°C) Vd= 2.0 V, Id = 55 mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 115
HMC-ALH102
v01.0108
LOW NOISE AMPLIFIERS - CHIP
1
GaAs HEMT MMIC WIDEBAND
LOW NOISE AMPLIFIER, 2 - 20 GHz
Absolute Maximum Ratings
Drain Bias Voltage
+3.7 Vdc
Gate Bias Voltage
-1 to +0.3 Vdc
RF Input Power
5 dBm
Channel Temperature
180 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
Standard
Alternate
WP - 10
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
1 - 116
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH102
v01.0108
GaAs HEMT MMIC WIDEBAND
LOW NOISE AMPLIFIER, 2 - 20 GHz
Pad Number
Function
Pad Description
1
RFIN
This pas is AC coupled and matched to 50 Ohms.
2
Vdd
Power Supply Voltage for the amplifier. See Assembly Diagram for required external components.
3, 5
Vgg
Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required
external components.
4
RFOUT
This pad is AC coupled and matched to 50 Ohms.
Die Bottom
GND
Die Bottom must be connected to RF/DC ground.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LOW NOISE AMPLIFIERS - CHIP
1
Pad Descriptions
1 - 117
HMC-ALH102
v01.0108
Assembly Diagram
LOW NOISE AMPLIFIERS - CHIP
1
GaAs HEMT MMIC WIDEBAND
LOW NOISE AMPLIFIER, 2 - 20 GHz
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output.10 Ohms
Note 3: Gate bond pads (VG) exist on the upper & lower sides of the MMIC for assembly convenience. For best performance the
unused pad should be attached to a 100pF cap to ground, but is not required.
1 - 118
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH102
GaAs HEMT MMIC WIDEBAND
LOW NOISE AMPLIFIER, 2 - 20 GHz
1
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be
raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface
of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick
die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then
attached to the ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be brought as close to the die as possible in order to
minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils).
Handling Precautions
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or
with electrically conductive epoxy. The mounting surface should be clean and flat.
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
LOW NOISE AMPLIFIERS - CHIP
v01.0108
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface
temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature
should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3
seconds of scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on
the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 119
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertisement