HMC-ABH241
HMC-ABH241
v01.1207
3
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 50 - 66 GHz
Typical Applications
Features
This HMC-ABH241 is ideal for:
Output IP3: +25 dBm
• Short Haul / High Capacity Links
P1dB: +17 dBm
• Wireless LAN Bridges
Gain: 24 dB
• Military & Space
Supply Voltage: +5 V
LINEAR & POWER AMPLIFIERS - CHIP
50 Ohm Matched Input/Output
Die Size: 3.2 x 1.42 x 0.1 mm
Functional Diagram
General Description
The HMC-ABH241 is a four stage GaAs HEMT MMIC
Medium Power Amplifier which operates between
50 and 66 GHz. The HMC-ABH241 provides 24 dB
of gain, and an output power of +17 dBm at 1dB
compression from a +5V supply voltage. All bond pads
and the die backside are Ti/Au metallized and the
amplifier device is fully passivated for reliable operation.
The HMC-ABH241 GaAs HEMT MMIC Medium
Power Amplifier is compatible with conventional die
attach methods, as well as thermocompression and
thermosonic wire bonding, making it ideal for MCM and
hybrid microcircuit applications. All data shown herein
is measured with the chip in a 50 Ohm environment
and contacted with RF probes.
Electrical Specifi cations, TA = +25° C,
Vdd1= Vdd2= Vdd3= 5V, Idd1 + Idd2 + Idd3= 220 mA [2]
Parameter
Min.
Frequency Range
Typ.
Max.
50 - 66
GHz
24
dB
Input Return Loss
15
dB
Output Return Loss
15
dB
Output Power for 1 dB Compression (P1dB)
17
dBm
Output Third Order Intercept (IP3)
25
dBm
Saturated Output Power (Psat)
19
dBm
220
mA
Gain
19
Supply Current (Idd1 + Idd2 + Idd3)
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1 = Vgg2 = Vgg3 between -1V to +0.3V (typ -0.3V) to achieve Idd total = 220 mA
3 - 136
Units
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ABH241
v01.1207
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 50 - 66 GHz
Fixtured Output Power vs. Frequency
Linear Gain vs. Frequency
25
30
25
20
15
3
15
P1dB
P3dB
10
10
5
5
0
0
48
50
52
54
56
58
60
62
64
66
50
68
52
54
56
Input Return Loss vs. Frequency
60
62
64
66
68
Output Return Loss vs. Frequency
0
0
-5
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
58
FREQUENCY (GHz)
FREQUENCY (GHz)
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
-35
-35
48
50
52
54
56
58
60
FREQUENCY (GHz)
62
64
66
68
50
52
54
56
58
60
62
64
66
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
68
70
LINEAR & POWER AMPLIFIERS - CHIP
POUT (dBm)
GAIN (dB)
20
3 - 137
HMC-ABH241
v01.1207
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 50 - 66 GHz
Absolute Maximum Ratings
LINEAR & POWER AMPLIFIERS - CHIP
3
Drain Bias Voltage
+5.5 Vdc
Gain Bias Voltage
-1 to +0.3 Vdc
RF Input Power
2 dBm
Storage Temperature
-65 °C to + 150°C
Chennel Temperature
+180 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
Standard
Alternate
WP - 19
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
3 - 138
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ABH241
v01.1207
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 50 - 66 GHz
Pad Descriptions
Function
Description
1
RFIN
This pad is AC coupled and matched to
50 Ohms.
2, 4, 6,
10, 12, 14
Vgg1, Vgg2
Vgg3
Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required
external components.
3, 5, 7,
9, 11, 13
Vdd1, Vdd2,
Vdd3
Power Supply Voltage for the amplifier. See assembly for
required external components.
8
RFOUT
This pad is AC coupled and matched to
50 Ohms.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3
LINEAR & POWER AMPLIFIERS - CHIP
Pad Number
3 - 139
HMC-ABH241
v01.1207
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 50 - 66 GHz
Assembly Diagram
LINEAR & POWER AMPLIFIERS - CHIP
3
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier.
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output.
3 - 140
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ABH241
v01.1207
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 50 - 66 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Ribbon Bond
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity:
strikes.
3
0.076mm
(0.003”)
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Ribbon Bond
0.076mm
(0.003”)
RF Ground Plane
Follow ESD precautions to protect against ESD
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010” Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
LINEAR & POWER AMPLIFIERS - CHIP
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 141
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertisement