Analog Devices Welcomes Hittite Microwave Corporation www.analog.com www.hittite.com

Analog Devices Welcomes Hittite Microwave Corporation www.analog.com www.hittite.com
Analog Devices Welcomes
Hittite Microwave Corporation
NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
www.analog.com
www.hittite.com
THIS PAGE INTENTIONALLY LEFT BLANK
HMC7149
v
AMPLIFIERS - LINEAR & POWER - CHIP
10 WATT GaN MMIC POWER AMPLIFIER,
6 - 18 GHz
Typical Applications
Features
The HMC7149 is ideal for:
High Psat: +40 dBm
• Test Instrumentation
Power Gain at Psat: +10 dB
• General Communications
High Output IP3: +39.5 dBm
• Radar
Small Signal Gain: 20 dB
Supply Voltage: +28 V @ 680 mA
50 Ohm Matched Input/Output
Die Size: 3.4 x 4.5 x 0.1 mm
Functional Diagram
General Description
The HMC7149 is an 10W Gallium Nitride (GaN) MMIC
Power Amplifier which operates between 6 and 18
GHz. The amplifier typically provides 20dB of small
signal gain, +40 dBm of saturated output power, and
+39.5 dBm output IP3 at +28 dBm output power per
tone. The HMC7149 draws 680 mA current from
a +28V DC supply. The RF I/Os are matched to 50
Ohms for ease of integration into Multi-Chip-Modules
(MCMs). All electrical performance data was aquired
with the die eutectically attached to 1.02 mm (40 mil)
thick CuMo carrier with multiple 1.0 mil diameter ball
bonds connecting the die to 50 Ohm transmission
lines on alumina.
Electrical Specifications, Tc = +25°C, Vdd= Vdd1 =Vdd2 = +28 V, Idd = 680 mA [1]
Parameter
Min.
Frequency Range
Typ.
Max.
Min.
6 - 10
Small Signal Gain
19
21
Typ.
Max.
Min.
10 - 14
18
20
Typ.
Max.
Min.
14 - 16
17
19
18
Typ.
Max.
Units
16 - 18
GHz
20
dB
Gain Flatness
±0.5
±0.6
±0.5
±0.7
dB
Gain Variation Over Temperature
0.023
0.02
0.02
0.018
dB/ °C
Input Return Loss
17
17
16
11
dB
Output Return Loss
17
17
18
12
dB
Output Power for 4 dB Compression
(P4dB)
35
35
35
36
dBm
Power Gain for 4 dB compression
(P4dB)
17
16
15
17
dB
40
40
40
40
dBm
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
[2]
39.5
39
39.5
40.5
dBm
Power Added Efficiency
22
20
20
20
%
Supply Current (Idd @ Vdd = 28V)
680
680
680
680
mA
[1] Adjust Vgg between -3V and 0V to achieve Idd= 680 mA typical.
[2] Measurement taken at 28V @ 680 mA, Pout/tone = +28 dBm.
1
For price, delivery and to place orders: Analog Devices, Inc., 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order On-line at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC7149
v
Gain and Return Loss
Gain vs. Temperature
30
28
26
20
22
GAIN (dB)
Response (dB)
24
10
0
-10
20
18
16
-20
14
-30
12
10
-40
4
6
8
10
12
14
16
18
20
6
8
10
S21
S11
S22
+25C
28
0
26
-5
RETURN LOSS (dB)
24
22
Gain (dB)
14
16
18
+85C
-40C
Input Return Loss vs. Temperature
Gain vs. Vdd
20
18
16
14
-10
-15
-20
-25
-30
-35
12
-40
10
6
8
10
12
14
16
18
6
8
10
24V
12
14
16
18
FREQUENCY (GHz)
FREQUENCY (GHz)
28V
+25C
32V
Output Return Loss vs. Temperature
+85C
-40C
Pout vs. Frequency
45
0
-5
40
-10
-15
Pout (dBm)
RETURN LOSS (dB)
12
FREQUENCY (GHz)
FREQUENCY (GHz)
AMPLIFIERS - LINEAR & POWER - CHIP
10 WATT GaN MMIC POWER AMPLIFIER,
6 - 18 GHz
-20
-25
35
30
25
-30
20
-35
-40
15
6
8
10
12
14
16
18
6
8
10
FREQUENCY (GHz)
+25C
+85C
12
14
16
18
FREQUENCY (GHz)
-40C
P4dB
Psat
For price, delivery and to place orders: Analog Devices, Inc., 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order On-line at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
2
HMC7149
v
10 WATT GaN MMIC POWER AMPLIFIER,
6 - 18 GHz
45
40
40
P4dB (dBm)
P4dB (dBm)
P4dB vs. Supply Voltage
45
35
30
35
30
25
25
6
8
10
12
14
16
18
6
8
10
FREQUENCY (GHz)
+25C
+85C
24V
-40C
45
45
Psat (dBm)
50
40
35
16
18
28V
32V
40
35
30
30
6
8
10
12
14
16
18
6
8
10
FREQUENCY (GHz)
12
14
16
18
FREQUENCY (GHz)
+85C
-40C
24V
P4dB vs. Supply Current
28V
32V
Psat vs. Supply Curent
50
45
45
Psat (dBm)
40
P4dB (dBm)
14
Psat vs. Supply Voltage
50
+25C
35
40
35
30
30
25
6
8
10
12
14
16
18
6
8
340 mA
680 mA
1360 mA
10
12
14
16
18
FREQUENCY (GHz)
FREQUENCY (GHz)
3
12
FREQUENCY (GHz)
Psat vs. Temperature
Psat (dBm)
AMPLIFIERS - LINEAR & POWER - CHIP
P4dB vs. Temperature
340 mA
680 mA
1360 mA
For price, delivery and to place orders: Analog Devices, Inc., 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order On-line at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC7149
v
10 WATT GaN MMIC POWER AMPLIFIER,
6 - 18 GHz
43
30
41
20
IP3 (dBm)
POWER GAIN (dB)
25
15
39
37
10
35
5
33
0
6
8
10
12
14
16
6
18
8
10
P4dBm
12
14
16
18
FREQUENCY (GHz)
FREQUENCY (GHz)
Psat
+25 C
+85 C
-40 C
Output IP3 vs. Supply Current
Pout/tone = +28 dBm
Output IP3 vs. Supply Voltage
Pout/tone = +28 dBm
48
43
46
44
IP3 (dBm)
IP3 (dBm)
41
39
37
42
40
38
36
35
34
32
33
6
8
10
12
14
16
6
18
8
10
24V
28V
340 mA
32V
Output IM3 @ Vdd= +24V
14
16
18
680 mA
1360 mA
Output IM3 @ Vdd= +28V
50
50
40
40
IM3 (dBc)
IM3 (dBc)
12
FREQUENCY (GHz)
FREQUENCY (GHz)
AMPLIFIERS - LINEAR & POWER - CHIP
Output IP3 vs. Temperature
Pout/tone = +28 dBm
Power Gain vs. Frequency
30
20
30
20
10
10
20
22
24
26
28
30
32
20
22
24
Pout/tone(dBm)
6 GHz
8 GHz
10 GHz
12 GHz
14 GHz
16 GHz
26
28
30
32
Pout/TONE (dBm)
18 GHz
6 GHz
8 GHz
10 GHz
12 GHz
14 GHz
16 GHz
18 GHz
For price, delivery and to place orders: Analog Devices, Inc., 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order On-line at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
4
HMC7149
v
Power Compression @ 6 GHz
Output IM3 @ Vdd= +32V
IM3 (dBc)
40
30
20
50
2250
45
2025
40
1800
35
1575
30
1350
25
1125
20
900
15
675
10
450
5
225
0
0
10
20
22
24
26
28
30
32
0
2
4
6
8
12 GHz
14 GHz
16 GHz
Pout
18 GHz
Gain
Power Compression @ 18 GHz
50
2250
45
2025
45
2025
40
1800
40
1800
35
1575
35
1575
30
1350
30
1350
25
1125
25
1125
20
900
20
900
15
675
15
675
10
450
10
450
5
225
5
225
0
0
0
2
4
6
Pout(dBm), GAIN(dB), PAE(%)
2250
0
0
8 10 12 14 16 18 20 22 24 26 28 30
0
2
4
6
8
INPUT POWER (dBm)
10 12 14 16 18 20 22 24 26 28
INPUT POWER (dBm)
Gain
PAE
Pout
Gain
Idd
PAE
Idd
Gain and Power vs.
Supply Voltage @ 12 GHz
Gain and Power vs.
Supply Curent @ 12 GHz
45
P1dB (dBm), Psat (dBm), GAIN(dB)
45
P4dB (dBm), Psat (dBm), Gain(dB)
Idd (mA)
50
Pout
40
35
30
25
20
40
35
30
25
20
15
15
24
26
28
30
32
340
510
P4dB(dBm)
Psat(dBm)
Gain(dB)
680
850
1020
1190
1360
Idd (mA)
Vdd (V)
5
PAE
Idd
Power Compression @ 12 GHz
Pout(dBm), GAIN(dB), PAE(%)
10 12 14 16 18 20 22 24 26 28
INPUT POWER (dBm)
Pout/TONE (dBm)
6 GHz
8 GHz
10 GHz
Idd (mA)
Pout(dBm), GAIN(dB), PAE(%)
50
Idd (mA)
AMPLIFIERS - LINEAR & POWER - CHIP
10 WATT GaN MMIC POWER AMPLIFIER,
6 - 18 GHz
P4dB(dBm)
Psat(dBm)
Gain(dB)
For price, delivery and to place orders: Analog Devices, Inc., 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order On-line at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC7149
v
10 WATT GaN MMIC POWER AMPLIFIER,
6 - 18 GHz
Second Harmomonics vs. Supply Voltage
70
0
SECOND HARMONIC (dBc)
-10
ISOLATION (dB)
-20
-30
-40
-50
-60
-70
-80
60
50
40
30
20
10
-90
0
6
8
10
12
14
16
6
18
8
10
FREQUENCY (GHz)
+25 C
+85 C
24V
-40 C
14
16
18
28V
32V
Second Harmomonics vs. Pout
Second Harmomonics vs. Supply Current
70
70
60
60
SECOND HARMONIC (dBc)
SECOND HARMONIC (dBc)
12
FREQUENCY(GHz)
50
40
30
20
10
50
40
30
20
10
0
0
6
8
10
12
14
16
18
6
8
10
FREQUENCY(GHz)
340 mA
12
14
16
18
FREQUENCY(GHz)
680 mA
1360 mA
24 dBm
26 dBm
28 dBm
30 dBm
AMPLIFIERS - LINEAR & POWER - CHIP
Reverse Isolation vs. Temperature
32 dBm
Power Dissipation
POWER DISSIPATION (W)
45
40
35
30
25
20
15
10
0
3
6
9
12
15
18
21
24
27
30
INPUT POWER (dBm)
6 GHz
8 GHz
10 GHz
12 GHz
14 GHz
16 GHz
18 GHz
For price, delivery and to place orders: Analog Devices, Inc., 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order On-line at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
6
HMC7149
v
10 WATT GaN MMIC POWER AMPLIFIER,
6 - 18 GHz
AMPLIFIERS - LINEAR & POWER - CHIP
Absolute Maximum Ratings[1]
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd)
+32V
Gate Bias Voltage (Vgg)
-8V to +0V
Maximum Forward Gate Current
6 mA
Maximum RF Input Power (RFIN)
30 dBm
Maximum Junction Temperature (Tj)
225 °C
Maximum Pdiss (T=85°C)
(Derate 357 mW/°C above 85°C)
50 W
Thermal Resistance [2]
2.8 °C/W
Maximum VSWR [3]
6:1
Storage Temperature
-55 to +150 °C
Operating Temperature
-40 to +85 °C
Idd (mA)
+28.0
680
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
[1] Operation outside parameter ranges above can cause permanent damage to the device. These are maximum stress ratings
only. Continuous operation of the device at these conditions is not implied.
[2] Assumes 1mil AuSn die attach to a 40mil CuMo Carrier with 85°C at the back of the carrier.
[3] Restricted by maximum power dissipation
Outline Drawing
Die Packaging Information [1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
7
Vdd (V)
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
For price, delivery and to place orders: Analog Devices, Inc., 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order On-line at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC7149
v
10 WATT GaN MMIC POWER AMPLIFIER,
6 - 18 GHz
Pad Number
Function
Description
1
RFIN
This pad is AC coupled and is matched to 50 Ohms.
External blocking capacitor is required.
2
Vdd1
Drain Bias
3
RFOUT
This pad is DC coupled and is matched to 50 Ohms.
External blocking capacitor is required.
4
Vgg2
Gate Bias
5
Vdd2
Drain Bias
6
Vgg1
Gate Bias
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
For price, delivery and to place orders: Analog Devices, Inc., 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order On-line at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
Pad Descriptions
8
HMC7149
v
10 WATT GaN MMIC POWER AMPLIFIER,
6 - 18 GHz
AMPLIFIERS - LINEAR & POWER - CHIP
Application Circuit
9
Assembly Diagram
For price, delivery and to place orders: Analog Devices, Inc., 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order On-line at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC7149
v
10 WATT GaN MMIC POWER AMPLIFIER,
6 - 18 GHz
The die should be eutectically attached directly to the ground plane (see
HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the
chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates
must be used, the die should be raised 0.150mm (6 mils) so that the
surface of the die is coplanar with the surface of the substrate. One
way to accomplish this is to attach the 0.102mm (4 mil) thick die to a
copper tungsten or CuMo heat spreader which is then attached to the
thermally conductive ground plane (Figure 2).
0.102mm (0.004”) Thick GaN MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD
protective containers, and then sealed in an ESD protective bag for
shipment. Once the sealed ESD protective bag has been opened, all die
should be stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT
attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
Die placement: A heated vacuum collet (180°C) is the preferred method of pick up. Ensure that the area of vacuum
contact on the die is minimized to prevent cracking under differential pressure. All air bridges (if applicable) must be
avoided during placement. Minimize impact forces applied to the die during auto-placement.
AMPLIFIERS - LINEAR & POWER - CHIP
Mounting & Bonding Techniques for GaN MMICs
Mounting
The chip is back-metallized with a minimum of 5 microns of gold and is the RF ground and thermal interface. It is
recommended that the chip be die mounted with AuSn eutectic preforms. The mounting surface should be clean
and flat.
Eutectic Reflow Process: An 80/20 gold tin 0.5mil (13um) thick preform is recommended with a work surface temperature of 280°C. Limit exposure to temperatures above 300°C to 30 seconds maximum. A die bonder or furnace
with 95% N2 / 5% H2 reducing atmosphere should be used. No organic flux should be used. Coefficient of thermal
expansion matching is critical for long term reliability.
Die Attach Inspection: X-ray or acoustic scan is recommended.
Wire Bonding
Thermosonic ball or wedge bonding is the preferred interconnect technique. Gold wire must be used in a diameter
appropriate for the pad size and number of bonds applied. Force, time and ultrasonics are critical parameters: optimize for a repeatable, high bond pull strength. Limit the die bond pad surface temperature to 200°C maximum.
For price, delivery and to place orders: Analog Devices, Inc., 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order On-line at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
10
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertisement