TB2904HQ (o) TB2904HQ(o) × 4-ch Audio Power IC Maximum Power 43 W BTL

TB2904HQ (o) TB2904HQ(o) × 4-ch Audio Power IC Maximum Power 43 W BTL
TB2904HQ(o)
TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic
TB2904HQ (o)
Maximum Power 43 W BTL × 4-ch Audio Power IC
The TB2904H (o) is 4-ch BTL audio amplifier for car audio
applications.
This IC can generate higher power: POUT MAX = 43 W as it
includes the pure complementary P-ch and N-ch DMOS output
stage.
It is designed to yield low distortion ratio for 4-ch BTL audio
power amplifier, built-in standby function, muting function, and
various kinds of protectors.
Additionally, Off-set detector is built in.
Weight: 7.7 g (typ.)
Features
•
High power output
: POUT MAX (1) = 43 W (typ.)
P (VCC = 14.4 V, f = 1 kHz, JEITA max, RL = 4 Ω)
: POUT MAX (2) = 39 W (typ.)
(VCC = 13.7 V, f = 1 kHz, JEITA max, RL = 4 Ω)
: POUT (1) = 26 W (typ.)
(VCC = 14.4 V, f = 1 kHz, THD = 10%, RL = 4 Ω)
: POUT (2) = 23 W (typ.)
(VCC = 13.2 V, f = 1 kHz, THD = 10%, RL = 4 Ω)
•
Low distortion ratio: THD = 0.015% (typ.)
(VCC = 13.2 V, f = 1 kHz, POUT = 5 W, RL = 4 Ω)
•
Low noise: VNO = 90 µVrms (typ.)
(VCC = 13.2 V, Rg = 0 Ω, BW = 20 Hz to 20 kHz, RL = 4 Ω)
•
Built-in standby switch function (pin 4)
•
Built-in muting function (pin 22)
•
Built-in Off-set detection function (pin 25)
•
Built-in various protection circuits:
Thermal shut down, overvoltage, out to GND, out to VCC, out to out short, speaker burned
•
Operating supply voltage: VCC (opr) = 9 to 18 V (RL = 4 Ω)
Note 1: Since this device’s pins have a low withstanding voltage, please handle it with care.
Note 2: Install the product correctly. Otherwise, it may result in break down, damage and/or degradation to the
product or equipment.
Note 3: These protection functions are intended to avoid some output short circuits or other abnormal conditions
temporarily. These protect functions do not warrant to prevent the IC from being damaged.
In case of the product would be operated with exceeded guaranteed operating ranges, these protection
features may not operate and some output short circuits may result in the IC being damaged.
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TB2904HQ(o)
20
VCC1
6
VCC2
OUT1 (+)
C1
11
PW-GND1 8
OUT2 (+)
12
15
RL
3
14
17
IN3
PW-GND3 18
OUT4 (+)
RL
19
21
IN4
PW-GND4 24
OUT4 (−)
PRE-GND
5
16 AC-GND
OUT3 (−)
C1
7
PW-GND2 2
OUT3 (+)
C1
RL
IN2
OUT2 (−)
C6
9
IN1
OUT1 (−)
C1
C3
1
TAB
C5
Block Diagram
RL
23
13
RIP
STBY
10
4
OFF-SET
MUTE
DET
25
22
5V
C4
C2
PLAY
R1
MUTE
: PRE-GND
: PW-GND
Note:
Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified for
explanatory purpose.
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Caution and Application Method (Description is made only on the single channel)
1. Voltage Gain Adjustment
This IC has no NF (negative feedback) Pins. Therefore, the voltage gain can not be adjusted, but it makes
the device a space and total costs saver.
Amp. 2A
Amp. 1
Input
Amp. 2B
Figure 1
Block Diagram
The voltage gain of amp.1
: GV1 = 0dB
The voltage gain of amp.2A, B
: GV2 = 20dB
The voltage gain of BTL connection : GV (BTL) = 6dB
Therefore, the total voltage gain is decided by expression below.
GV = GV1 + GV2 + GV (BTL) = 0 + 20 + 6 = 26dB
2.
Standby SW Function (pin 4)
By means of controlling pin 4 (standby pin) to
High and Low, the power supply can be set to ON
and OFF. The threshold voltage of pin 4 is set at
about 3 VBE (typ.), and the power supply current is
about 2 µA (typ.) in the standby state.
VCC
ON Power
OFF
Control Voltage of Pin 4: VSB
Stand-by
Power
VSB (V)
ON
OFF
0 to 1.5
OFF
ON
3.5 to 6 V
4
10 kΩ
≈ 2 VBE
to BIAS
CUTTING CIRCUIT
When changing the time constant of pin 4, check the
pop noise.
Figure 2 With pin 4 set to High,
Power is turned ON
Advantage of Standby SW
(1)
(2)
Since VCC can directly be controlled to ON or OFF by the microcomputer, the switching relay can be
omitted.
Since the control current is microscopic, the switching relay of small current capacity is satisfactory
for switching.
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TB2904HQ(o)
Relay
Large current capacity switch
Battery
Battery
VCC
From
microcomputer
VCC
– Conventional Method –
Small current capacity switch
Battery
From microcomputer
Battery
Stand-By VCC
Stand-By VCC
– Standby Switch Method –
Figure 3
3. Muting Function (pin 22)
Audio muting function is enabled when pin 22 is Low. When the time constant of the muting function is
determined by R1 and C4, it should take into account the pop noise. The pop noise, which is generated when
the power or muting function is turned ON/OFF, will vary according to the time constant. (Refer to Figure 4
and Figure 5.)
The pin 22 is designed to operate off 5 V so that the outside pull-up resistor R1 is determined on the basic
of this value:
ex) When control voltage is changed in to 6 V from 5 V.
6 V/5 V × 47 k = 56 k
Additionally, as the VCC is rapidly falling, the IC internal low voltage muting operates to eliminate the
large pop noise basically.
The low voltage muting circuit pull 200 µA current into the IC so that the effect of the internal low
voltage muting does not become enough if the R1 is too small value.
To obtain enough operation of the internal low voltage muting, a series resistor, R1 at pin 22 should be
47 kΩ or more.
ATT – VMUTE
20
VCC = 13.2 V
f = 1 kHz
RL = 4 Ω
Vout = 7.75 Vrms
(20dBm)
Mute attenuation ATT
(dB)
0
5V
R1
22
C4
1 kΩ
Mute ON/OFF
control
−20
−40
−60
−80
−100
−120
0
0.5
1
1.5
2
2.5
Pin 22 control voltage: VMUTE
Figure 4
Muting Function
Figure 5
4
3
3.5
(V)
Mute Attenuation − VMUTE (V)
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TB2904HQ(o)
4. Off-set detection function
In case of Appearing output offset voltage by Generating a Large Leakage Current on the input
Capacitor etc.
V
DC Voltage (+) Amp (at leak) (RS1)
VCC/2 (normal DC voltage)
Leak or short
Vref
DC Voltage (−) Amp (at short) (RS2)
+
RS1
Offset voltage (at leak or short)
Vref/2
RS2
Elec. vol
5V
−
Vbias
L.P.F.
25
A
Figure 6
To CPU
B
Application and Detection Mechanism
Threshold level (RS1)
(+) Amp output
VCC/2
Threshold level (RS2)
GND
t
Voltage of
point (A)
GND
t
Voltage of
point (B)
GND
t
RS2
Figure 7 Wave Form
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5. Prevention of speaker burning accident (in case of rare short circuit of speaker)
When the direct current resistance between OUT+ and OUT− terminal becomes 1 Ω or less and output
current over 4 A flows, this IC makes a protection circuit operate and suppresses the current into a speaker.
This system makes the burning accident of the speaker prevent as below mechanism.
<The guess mechanism of a burning accident of the speaker>
Abnormal output offset voltage (voltage between OUT+ and OUT−) over 4 V is made by the external
circuit failure.(Note 1)
↓
The speaker imepedance becomes 1 Ω or less as it is in a rare short circuit condition.
↓
The current more than 4 A flows into the speaker and the speaker is burned.
Current into a speaker
Operating point of protector
Less than 4A
Speaker Impedance
About 1 Ω
4Ω
Figure 8
Note 1: It is appeared by biased input DC voltage
(For example, large leakage of the input capacitor, short-circuit between copper patterns of PCB.)
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6. Pop Noise Suppression
Since the AC-GND pin (pin 16) is used as the NF pin for all amps, the ratio between the input
capacitance (C1) and the AC-to-GND capacitance (C6) should be 1:4.
Also, if the power is turned OFF before the C1 and C6 batteries have been completely charged, pop noise
will be generated because of the DC input unbalance.
To counteract the noise, it is recommended that a longer charging time be used for C2 as well as for C1
and C6. Note that the time which audio output takes to start will be longer, since the C2 makes the muting
time (the time from when the power is turned ON to when audio output starts) is fix.
The pop noise which is generated when the muting function is turned ON/OFF will vary according to the
time constant of C4.
The greater the capacitance, the lower the pop noise. Note that the time from when the mute control
signal is applied to C4 to when the muting function is turned ON/OFF will be longer.
7. External Component Constants
Component Recommended
Name
Value
Effect
Purpose
Lower than recommended
value
Higher than recommended
value
C1
0.22 µF
To eliminate DC
Cut-off frequency is
increased
Cut-off frequency is reduced
C2
10 µF
To reduce ripple
Powering ON/OFF is faster
Powering ON/OFF takes
longer
C3
0.1 µF
To provide
sufficient
oscillation margin
Reduces noise and provides sufficient oscillation margin
C4
1 µF
To reduce pop
noise
High pop noise. Duration until Low pop noise. Duration until
muting function is turned
muting function is turned
ON/OFF is short
ON/OFF is long
C5
3900 µF
Ripple filter
Power supply ripple filtering
C6
1 µF
NF for all outputs
Pop noise is suppressed when C1:C6 = 1:4
Note:
Notes
Pop noise is
generated when
VCC is ON
Pop noise is
generated when
VCC is ON
If recommended value is not used.
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Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
VCC (surge)
50
V
DC supply voltage
VCC (DC)
28
V
Operation supply voltage
VCC (opr)
18
V
Peak supply voltage (0.2 s)
Output current (peak)
Power dissipation
IO (peak)
PD (Note 2)
9
A
125
W
Operation temperature
Topr
−40 to 85
°C
Storage temperature
Tstg
−55 to 150
°C
Note 2: Package thermal resistance θj-T = 1°C/W (typ.) (Ta = 25°C, with infinite heat sink)
The absolute maximum ratings of a semiconductor device are a set of specified parameter values, which must not
be exceeded during operation, even for an instant. If any of these rating would be exceeded during operation, the
device electrical characteristics may be irreparably altered and the reliability and lifetime of the device can no
longer be guaranteed. Moreover, these operations with exceeded ratings may cause break down, damage and/or
degradation to any other equipment. Applications using the device should be designed such that each maximum
rating will never be exceeded in any operating conditions. Before using, creating and/or producing designs, refer to
and comply with the precautions and conditions set forth in this documents.
Electrical Characteristics
(unless otherwise specified, VCC = 13.2 V, f = 1 kHz, RL = 4 Ω, Ta = 25°C)
Symbol
Test
Circuit
ICCQ

POUT MAX (1)
Min
Typ.
Max
Unit
VIN = 0

170
340
mA

VCC = 14.4 V, max POWER

43

POUT MAX (2)

VCC = 13.7 V, max POWER

39

POUT (1)

VCC = 14.4 V, THD = 10%

26

POUT (2)

THD = 10%
21
23

THD

POUT = 5 W

0.015
0.15
%
Voltage gain
GV

VOUT = 0.775 Vrms
24
26
28
dB
Voltage gain ratio
∆GV

VOUT = 0.775 Vrms
−1.0
0
1.0
dB
VNO (1)

Rg = 0 Ω, DIN45405

100

VNO (2)

Rg = 0 Ω, BW = 20 Hz~20 kHz

90
200
Ripple rejection ratio
R.R.

frip = 100 Hz, Rg = 620 Ω
Vrip = 0.775 Vrms
50
60

dB
Cross talk
C.T.

Rg = 620 Ω
VOUT = 0.775 Vrms

70

dB
VOFFSET


−150
0
150
mV
Input resistance
RIN



90

kΩ
Standby current
ISB

Standby condition

2
10
µA
VSB H

POWER: ON
3.5

6.0
VSB L

POWER: OFF
0

1.5
VM H

MUTE: OFF
3.0

6.0
VM L

MUTE: ON, R1 = 47 kΩ
0

0.5
ATT M

MUTE: ON
VOUT = 7.75 Vrms→Mute: OFF
85
100

Characteristics
Quiescent current
Output power
Total harmonic distortion
Output noise voltage
Output offset voltage
Standby control voltage
Mute control voltage
Mute attenuation
Test Condition
8
W
µVrms
V
V
dB
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TB2904HQ(o)
Offset detection
Detection threshold voltage
Voff-set

1
TAB
20
VCC1
Rpull-up = 47 kΩ, +V = 5.0V
Based on output DC voltage
±1.0
±1.5
±2.0
V
OUT1 (+)
0.22 µF
C1
11
PW-GND1 8
OUT2 (+)
C1
12
9
IN1
OUT1 (−)
0.22 µF
C3
0.1 µF
6
VCC2
3900 µF
C5
Test Circuit
RL
7
5
IN2
PW-GND2 2
OUT2 (−)
RL
3
1 µF
C6
16 AC-GND
OUT3 (+)
0.223 µF
C1
15
IN3
PW-GND3 18
OUT3 (−)
OUT4 (+)
0.22 µF
C1
14
RL
19
21
IN4
PW-GND4 24
OUT4 (−)
RL
23
13
10
4
OFF-SET
MUTE
DET
25
22
C4
1 µF
STBY
10 µF
RIP
C2
PRE-GND
17
5V
47 kΩ
PLAY
R1
MUTE
: PRE-GND
: PW-GND
Components in the test circuits are only used to obtain and confirm the device characteristics.
These components and circuits do not warrant to prevent the application equipment from malfunction or failure.
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TB2904HQ(o)
THD – POUT (ch1)
THD – POUT (ch2)
100
100
VCC = 13.2 V
VCC = 13.2 V
50
50
RL = 4 Ω
30 Filter
RL = 4 Ω
30 Filter
100 Hz : ~30 kHz
1kHz
10
100 Hz : ~30 kHz
: 400 Hz~30 kHz
1kHz
10
10 kHz : 400 Hz~
20 kHz : 400 Hz~
(%)
1
0.5
20 kHz
0.3
10 kHz
0.1
0.05
1 kHz
0.03
20 kHz : 400 Hz~
5
3
Total harmonic distortion THD
Total harmonic distortion THD
(%)
5
3
1
0.5
20 kHz
0.3
10 kHz
0.1
0.05
1 kHz
0.03
f = 100 Hz
0.01
0.01
0.005
0.005
0.003
0.003
0.001
0.1
0.3 0.5
1
: 400 Hz~30 kHz
10 kHz : 400 Hz~
3
Output power
5
10
POUT
30 50
f = 100 Hz
0.001
0.1
100
0.3 0.5
(W)
THD – POUT (ch3)
5
10
POUT
30 50
100
30 50
100
(W)
THD – POUT (ch4)
100
VCC = 13.2 V
VCC = 13.2 V
50
50
RL = 4 Ω
30 Filter
RL = 4 Ω
30 Filter
100 Hz : ~30 kHz
10
1kHz
100 Hz : ~30 kHz
: 400 Hz~30 kHz
10
10 kHz : 400 Hz~
20 kHz : 400 Hz~
5
Total harmonic distortion THD
3
1
0.5
20 kHz
0.3
10 kHz
0.1
0.05
0.03
1kHz
: 400 Hz~30 kHz
10 kHz : 400 Hz~
(%)
5
(%)
3
Output power
100
Total harmonic distortion THD
1
1 kHz
20 kHz : 400 Hz~
3
1
0.5
20 kHz
0.3
10 kHz
0.1
0.05
0.03
1 kHz
f = 100 Hz
0.01
0.01
0.005
0.005
0.003
0.003
0.001
0.1
0.3 0.5
1
3
Output power
5
10
POUT
30 50
0.001
0.1
100
(W)
f = 100 Hz
0.3 0.5
1
3
Output power
10
5
10
POUT
(W)
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TB2904HQ(o)
THD – POUT (ch1)
THD – POUT (ch2)
100
50
30
100
VCC = 13.2 V
50
RL = 4 Ω
f = 1 kHz
30
13.2 V
Filter
10
400 Hz~30 kHz
10
13.2 V
400 Hz~30 kHz
(%)
5
3
Total harmonic distortion THD
(%)
Total harmonic distortion THD
RL = 4 Ω
f = 1 kHz
Filter
5
1
0.5
VCC = 9.0 V
0.3
16.0 V
0.1
0.05
0.03
3
1
0.5
0.05
0.03
0.005
0.005
0.003
0.003
1
3
Output power
5
10
POUT
30 50
0.001
0.1
100
0.3 0.5
(W)
50
30
VCC = 13.2 V
RL = 4 Ω
測定 ch のみ入力
50
30
13.2 V
10
400 Hz~30 kHz
POUT
30 50
100
(W)
VCC = 13.2 V
RL = 4 Ω
f = 1 kHz
13.2 V
400 Hz~30 kHz
(%)
5
3
Total harmonic distortion THD
(%)
10
Filter
5
Total harmonic distortion THD
5
THD – POUT (ch4)
Filter
1
0.5
VCC = 9.0 V
0.3
16.0 V
0.1
0.05
0.03
3
1
0.5
0.05
0.03
0.005
0.005
0.003
0.003
1
3
Output power
5
10
POUT
30 50
0.001
0.1
100
(W)
0.3 0.5
1
3
Output power
11
16.0 V
0.1
0.01
0.3 0.5
VCC = 9.0 V
0.3
0.01
0.001
0.1
3
100
f = 1 kHz
10
1
Output power
THD – POUT (ch3)
100
16.0 V
0.1
0.01
0.3 0.5
VCC = 9.0 V
0.3
0.01
0.001
0.1
VCC = 13.2 V
5
10
POUT
30 50
100
(W)
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TB2904HQ(o)
THD – f
muteATT – f
0
3
(%)
RL = 4 Ω
−20
VOUT = 7.75 Vrms (20dBm)
Total harmonic distortion THD
Mute attenuation muteATT (dB)
VCC = 13.2 V
−40
−60
−80
1 ch ~4ch
−100
−120
10
100
1k
10 k
frequency f
VCC = 13.2 V
RL = 4 Ω
POUT = 5 W
1
No filter
0.3
2ch
0.1
1ch
0.01
4ch
0.003
0.001
0.01
100 k
3ch
0.03
0.1
1
frequency f
(Hz)
10
100
(Hz)
R.R. – f
GV – f
40
0
20
R.R.
GV (dB)
30
Voltage gain
(dB)
VCC = 13.2 V
Ripple rejection ratio
1 ch ~4ch
10
VCC = 13.2 V
RL = 4 Ω
VOUT = 0.775 Vrms (0dBm)
0
0.01
0.1
1
frequency f
10
RL = 4 Ω
Vrip = 0.775 Vrms (0dBm)
−20
−40
4ch
3ch
−60
2ch
−80
0.01
100
1ch
0.1
1
frequency f
(Hz)
12
10
100
(Hz)
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TB2904HQ(o)
VIN – POUT (ch1)
VIN – POUT (ch2)
40
40
10 kHz
(W)
30
100 Hz
1 kHz
Output power POUT
Output power POUT
(W)
100 Hz
f = 20 kHz
20
10
VCC = 13.2 V
30
10 kHz
1 kHz
f = 20 kHz
20
10
VCC = 13.2 V
RL = 4 Ω
No filter
0
0
2
4
6
Input voltage
VIN
RL = 4 Ω
No filter
8
0
0
10
2
(Vrms)
4
6
Input voltage
VIN – POUT (ch3)
VIN
8
(Vrms)
VIN – POUT (ch4)
40
40
10 kHz
(W)
30
100 Hz
1 kHz
Output power POUT
Output power POUT
(W)
100 Hz
f = 20 kHz
20
10
VCC = 13.2 V
30
10 kHz
1 kHz
f = 20 kHz
20
10
VCC = 13.2 V
RL = 4 Ω
No filter
0
0
2
4
Input voltage
6
VIN
8
RL = 4 Ω
No filter
0
0
10
2
(Vrms)
4
ICCQ – VCC
VIN
8
10
(Vrms)
PDMAX – Ta
120
Allowable power dissipation PDMAX (W)
(mA)
ICCQ
Quiescent Current
6
Input voltage
2000
RL = ∞
VIN = 0 V
160
120
80
40
0
0
10
(1) INFINITE HEAT SINK
RθJC = 1°C/W
(2) HEAT SINK (RθHS = 3.5°C/W
RθJC + RθHS = 4.5°C/W
100
(3) NO HEAT SINK
RθJA = 39°C/W
80
(1)
60
40
20
(2)
(3)
0
5
10
Supply voltage
15
VCC
20
0
25
(V)
25
50
75
Ambient temperature
13
100
125
150
Ta (°C)
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TB2904HQ(o)
C.T. – f (ch1)
−20
C.T. – f (ch2)
0
VCC = 13.2 V
RL = 4 Ω
VOUT = 0.775 Vrms (0dBm)
RG = 620 Ω
Cross talk C.T. (dB)
Cross talk C.T. (dB)
0
−40
ch2
ch3
−60
−20
VCC = 13.2 V
RL = 4 Ω
VOUT = 0.775 Vrms (0dBm)
RG = 620 Ω
−40
ch1
−60
ch3
ch4
ch4
−80
10
100
1k
frequency f
10 k
−80
10
100 k
100
(Hz)
1k
frequency f
C.T. – f (ch3)
−20
100 k
10 k
100 k
(Hz)
C.T. – f (ch4)
0
VCC = 13.2 V
RL = 4 Ω
VOUT = 0.775 Vrms (0dBm)
RG = 620 Ω
Cross talk C.T. (dB)
Cross talk C.T. (dB)
0
10 k
−40
ch1
ch2
−60
−20
VCC = 13.2 V
RL = 4 Ω
VOUT = 0.775 Vrms (0dBm)
RG = 620 Ω
−40
ch2
−60
ch1
ch4
ch3
−80
10
100
1k
frequency f
10 k
−80
10
100 k
100
(Hz)
1k
frequency f
VNO – Rg
PD – POUT
80
f = 1 kHz
RL = 4 Ω
Filter:
RL = 4 Ω
4ch drive
(W)
VCC = 13.2 V
20 Hz~20 kHz
200
Power dissipation PD
Output noise voltage VNO
(µVrms)
300
1ch~4ch
100
0
10
(Hz)
100
1k
10 k
60
16 V
40
13.2 V
20
9.0 V
0
0
100 k
Signal source resistance Rg (Ω)
18 V
5
10
15
Output power
14
25
20
POUT
30
(W)
2004-03-26
TB2904HQ(o)
Package Dimensions
Weight: 7.7 g (typ.)
15
2004-03-26
TB2904HQ(o)
About solderability, following conditions were confirmed
• Solderability
(1) Use of Sn-63Pb solder Bath
· solder bath temperature = 230°C
· dipping time = 5 seconds
· the number of times = once
· use of R-type flux
(2) Use of Sn-3.0Ag-0.5Cu solder Bath
· solder bath temperature = 245°C
· dipping time = 5 seconds
· the number of times = once
· use of R-type flux
RESTRICTIONS ON PRODUCT USE
030619EBF
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The products described in this document are subject to the foreign exchange and foreign trade laws.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
• This product generates heat during normal operation. However, substandard performance or malfunction may
cause the product and its peripherals to reach abnormally high temperatures.
The product is often the final stage (the external output stage) of a circuit. Substandard performance or
malfunction of the destination device to which the circuit supplies output may cause damage to the circuit or to the
product.
16
2004-03-26
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