LM7332 Dual Rail-to-Rail Input/Output 30V, Wide Voltage Range, High Output... Amplifier LM7332 FEATURES

LM7332 Dual Rail-to-Rail Input/Output 30V, Wide Voltage Range, High Output... Amplifier LM7332 FEATURES
LM7332
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SNOSAV4 – APRIL 2008
LM7332 Dual Rail-to-Rail Input/Output 30V, Wide Voltage Range, High Output Operational
Amplifier
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FEATURES
APPLICATIONS
•
•
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1
2
•
•
•
•
•
•
•
•
•
•
(VS = ±15V, TA = 25°C, typical values unless
specified.)
Wide supply voltage range 2.5V to 32V
Wide input common mode voltage 0.3V
beyond rails
Output short circuit current >100 mA
High output current (1V from rails) ±70 mA
GBWP 21 MHz
Slew rate 15.2 V/µs
Capacitive load tolerance Unlimited
Total supply current 2.0 mA
Temperature range −40°C to +125°C
Tested at −40°C, +125°C,
and 25°C at 5V, ±5V, ±15V
•
•
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MOSFET and power transistor driver
Replaces discrete transistors in high current
output circuits
Instrumentation 4-20 mA current loops
Analog data transmission
Multiple voltage power supplies and battery
chargers
High and low side current sensing
Bridge and sensor driving
Digital to analog converter output
DESCRIPTION
The LM7332 is a dual rail-to-rail input and output amplifier with a wide operating temperature range (−40°C to
+125°C) which meets the needs of automotive, industrial and power supply applications. The LM7332 has the
output current of 100 mA which is higher than that of most monolithic op amps. Circuit designs with high output
current requirements often need to use discrete transistors because many op amps have low current output. The
LM7332 has enough current output to drive many loads directly, saving the cost and space of the discrete
transistors.
The exceptionally wide operating supply voltage range of 2.5V to 32V alleviates any concerns over functionality
under extreme conditions and offers flexibility of use in a multitude of applications. Most of this device's
parameters are insensitive to power supply variations; this design enhancement is another step in simplifying
usage. Greater than rail-to-rail input common mode voltage range allows operation in many applications,
including high side and low side sensing, without exceeding the input range.
The LM7332 can drive unlimited capacitive loads without oscillations.
The LM7332 is offered in the 8-pin MSOP and SOIC packages.
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2008, Texas Instruments Incorporated
LM7332
SNOSAV4 – APRIL 2008
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Key Graphs
Output Swing
vs.
Sourcing Current
Large Signal Step Response for Various Capacitive Loads
100
10 pF
VS = 10V, AV = +1, RL = 1 M:
10
2000 pF
5V/DIV
VOUT FROM RAIL (V)
VS = 30V
125°C
1
85°C
10,000 pF
-40°C
0.1
25°C
20,000 pF
0.01
0.1
1
10
100
1000
2 Ps/DIV
ISOURCE (mA)
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
ESD Tolerance
(1)
(2)
Human Body Model
2 kV
Machine Model
200V
VIN Differential
±10V
Output Short Circuit Duration
Supply Voltage (VS = V+ - V−)
(3) (4)
35V
+
V +0.3V, V −0.3V
Voltage at Input/Output pins
−65°C to +150°C
Storage Temperature Range
Junction Temperature
−
(5)
+150°C
Soldering Information:
Infrared or Convection (20 sec.)
235°C
Wave Soldering (10 sec.)
260°C
(1)
(2)
(3)
(4)
(5)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Rating indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics.
Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of
JEDEC)Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C.
Short circuit test is a momentary test. Output short circuit duration is infinite for VS ≤ 6V at room temperature and below. For VS > 6V,
allowable short circuit duration is 1.5 ms.
The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.
Operating Ratings
Supply Voltage (VS = V+ - V−)
2.5V to 32V
Temperature Range (1)
Package Thermal Resistance, θJA,
(1)
8-Pin MSOP
235°C/W
8-Pin SOIC
165°C/W
(1)
2
−40°C to +125°C
The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.
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5V Electrical Characteristics
(1)
Unless otherwise specified, all limits are guaranteed for TA = 25°C, V+ = 5V, V− = 0V, VCM = 0.5V, VO = 2.5V, and RL > 1 MΩ
to 2.5V. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Condition
VOS
Input Offset Voltage
VCM = 0.5V and VCM = 4.5V
TC VOS
Input Offset Voltage
Temperature Drift
VCM = 0.5V and VCM = 4.5V
IB
Input Bias Current
IOS
Input Offset Current
CMRR
Common Mode Rejection Ratio
Min
Typ
Max
Units
−4
–5
±1.6
+4
+5
mV
(2)
−2.0
−2.5
+2.0
+2.5
µA
20
250
300
nA
67
65
80
0V ≤ VCM ≤ 5V
62
60
70
78
74
100
Power Supply Rejection Ratio
5V ≤ V+ ≤ 30V
CMVR
Input Common Mode Voltage
Range
CMRR > 50 dB
µV/°C
±1.0
0V ≤ VCM ≤ 3V
PSRR
(2)
±2
(4)
(5)
(3)
−0.3
5.1
5.0
5.3
70
65
77
dB
dB
−0.1
0.0
AVOL
Large Signal Voltage Gain
0.5V ≤ VO ≤ 4.5V
RL = 10 kΩ to 2.5V
VO
Output Swing
High
RL = 10 kΩ to 2.5V
VID = 100 mV
60
150
200
RL = 2 kΩ to 2.5V
VID = 100 mV
100
300
350
RL = 10 kΩ to 2.5V
VID = −100 mV
5
150
200
RL = 2 kΩ to 2.5V
VID = −100 mV
20
300
350
Output Swing
Low
ISC
Output Short Circuit Current
Sourcing from V+, VID = 200 mV
60
90
Sinking to V−, VID = −200 mV
60
90
(6)
(6)
V
dB
mV from
either rail
mA
IOUT
Output Current
VID = ±200 mV, VO = 1V from rails
±55
IS
Total Supply Current
No Load, VCM = 0.5V
1.5
AV = +1, VI = 5V Step, RL = 1 MΩ,
CL = 10 pF
12
V/µs
MHz
(7)
mA
2.3
2.6
mA
SR
Slew Rate
fu
Unity Gain Frequency
RL = 10 MΩ, CL = 20 pF
7.5
GBWP
Gain Bandwidth Product
f = 50 kHz
19.3
en
Input Referred Voltage Noise
f = 2 kHz
14.8
nV/
in
Input Referred Current Noise
f = 2 kHz
1.35
pA/
(1)
(2)
(3)
(4)
(5)
(6)
(7)
MHz
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ > TA.
All limits are guaranteed by testing or statistical analysis.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on
shipped production material.
Offset voltage temperature drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
Positive current corresponds to current flowing in the device.
Short circuit test is a momentary test. Output short circuit duration is infinite for VS ≤ 6V at room temperature and below. For VS > 6V,
allowable short circuit duration is 1.5 ms.
Slew rate is the slower of the rising and falling slew rates. Connected as a Voltage Follower.
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5V Electrical Characteristics (1) (continued)
Unless otherwise specified, all limits are guaranteed for TA = 25°C, V+ = 5V, V− = 0V, VCM = 0.5V, VO = 2.5V, and RL > 1 MΩ
to 2.5V. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Condition
Min
(2)
Typ
(3)
Max
(2)
Units
THD+N
Total Harmonic Distortion +Noise AV = +2, RL = 100 kΩ, f = 1 kHz,
VO = 4 VPP
−84
dB
CT Rej.
Crosstalk Rejection
68
dB
±5V Electrical Characteristics
f = 3 MHz, Driver RL = 10 kΩ
(1)
Unless otherwise specified, all limits are guaranteed for TA = 25°C, V+ = +5V, V− = −5V, VCM = 0V, VO = 0V, and RL > 1 MΩ to
0V. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Condition
VOS
Input Offset Voltage
VCM = −4.5V and VCM = 4.5V
TC VOS
Input Offset Voltage
Temperature Drift
VCM = −4.5V and VCM = 4.5V
IB
Input Bias Current
IOS
Input Offset Current
CMRR
Common Mode Rejection Ratio
Min
Typ
Max
Units
−4
−5
±1.6
+4
+5
mV
(2)
−2.0
−2.5
+2.0
+2.5
µA
20
250
300
nA
74
75
88
−5V ≤ VCM ≤ 5V
70
65
74
78
74
100
Power Supply Rejection Ration
5V ≤ V+ ≤ 30V, VCM = −4.5V
CMVR
Input Common Mode Voltage
Range
CMRR > 50 dB
µV/°C
±1.0
−5V ≤ VCM ≤ 3V
PSRR
(2)
±2
(4)
(5)
(3)
−5.3
5.1
5.0
5.3
72
70
80
dB
dB
−5.1
−5
AVOL
Large Signal Voltage Gain
−4V ≤ VO ≤ 4V
RL = 10 kΩ to 0V
VO
Output Swing
High
RL = 10 kΩ to 0V
VID = 100 mV
75
250
300
RL = 2 kΩ to 0V
VID = 100 mV
125
350
400
RL = 10 kΩ to 0V
VID = −100 mV
10
250
300
RL = 2 kΩ to 0V
VID = −100 mV
30
350
400
Output Swing
Low
ISC
Output Short Circuit Current
Sourcing from V+, VID = 200 mV
90
120
Sinking to V−, VID = −200 mV
90
100
(6)
(6)
IOUT
(1)
(2)
(3)
(4)
(5)
(6)
4
Output Current
VID = ±200 mV, VO = 1V from rails
±65
V
dB
mV from
either rail
mA
mA
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ > TA.
All limits are guaranteed by testing or statistical analysis.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on
shipped production material.
Offset voltage temperature drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
Positive current corresponds to current flowing in the device.
Short circuit test is a momentary test. Output short circuit duration is infinite for VS ≤ 6V at room temperature and below. For VS > 6V,
allowable short circuit duration is 1.5 ms.
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±5V Electrical Characteristics (1) (continued)
Unless otherwise specified, all limits are guaranteed for TA = 25°C, V+ = +5V, V− = −5V, VCM = 0V, VO = 0V, and RL > 1 MΩ to
0V. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Condition
Min
(2)
Typ
Max
Units
2.4
2.6
mA
(3)
(2)
IS
Total Supply Current
No Load, VCM = −4.5V
1.5
SR
Slew Rate
(7)
AV = +1, VI = 8V Step, RL = 1 MΩ,
CL = 10 pF
13.2
ROUT
Close Loop Output Resistance
AV = +1, f = 100 kHz
3
Ω
fu
Unity Gain Frequency
RL = 10 MΩ, CL = 20 pF
7.9
MHz
GBWP
Gain Bandwidth Product
f = 50 kHz
19.9
MHz
en
Input Referred Voltage Noise
f = 2 kHz
14.7
nV/
in
Input Referred Current Noise
f = 2 kHz
1.3
pA/
THD+N
Total Harmonic Distortion +Noise AV = +2, RL = 100 kΩ, f = 1 kHz
VO = 8 VPP
−87
dB
CT Rej.
Crosstalk Rejection
68
dB
(7)
f = 3 MHz, Driver RL = 10 kΩ
V/µs
Slew rate is the slower of the rising and falling slew rates. Connected as a Voltage Follower.
±15V Electrical Characteristics
(1)
Unless otherwise specified, all limits are guaranteed for TA = 25°C, V+ = +15V, V− = −15V, VCM = 0V, VO = 0V, and RL > 1 MΩ
to 0V. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Condition
VOS
Input Offset Voltage
VCM = −14.5V and VCM = 14.5V
TC VOS
Input Offset Voltage
Temperature Drift
VCM = −14.5V and VCM = 14.5V
IB
Input Bias Current
IOS
Input Offset Current
CMRR
Common Mode Rejection Ratio
(5)
±2
+5
+6
mV
+2.0
+2.5
µA
20
250
300
nA
72
72
80
78
74
100
−14V ≤ VO ≤ 14V
RL = 10 kΩ to 0V
µV/°C
±1.0
−15V ≤ VCM ≤ 15V
CMRR > 50 dB
(2)
±2
88
Input Common Mode Voltage
Range
(4)
(5)
−5
−6
74
74
CMVR
(2)
(3)
Units
(3)
−15V ≤ VCM ≤ 12V
−10V ≤ V+ ≤ 15V, VCM = −14.5V
(1)
Max
−2.0
−2.5
Power Supply Rejection Ratio
Large Signal Voltage Gain
Typ
(2)
(4)
PSRR
AVOL
Min
−15.3
15.1
15
15.3
72
70
80
dB
dB
−15.1
−15
V
dB
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ > TA.
All limits are guaranteed by testing or statistical analysis.
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on
shipped production material.
Offset voltage temperature drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
Positive current corresponds to current flowing in the device.
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±15V Electrical Characteristics (1) (continued)
Unless otherwise specified, all limits are guaranteed for TA = 25°C, V+ = +15V, V− = −15V, VCM = 0V, VO = 0V, and RL > 1 MΩ
to 0V. Boldface limits apply at the temperature extremes.
Symbol
VO
Parameter
Condition
Output Swing
High
Output Swing
Low
ISC
Output Short Circuit Current
Min
Typ
Max
RL = 10 kΩ to 0V
VID = 100 mV
100
350
400
RL = 2 kΩ to 0V
VID = 100 mV
200
550
600
RL = 10 kΩ to 0V
VID = −100 mV
20
450
500
RL = 2 kΩ to 0V
VID = −100 mV
25
550
600
Sourcing from V+, VID = 200 mV
140
Sinking to V−, VID = −200 mV
140
(2)
(3)
(6)
(6)
(2)
Units
mV from
either rail
mA
IOUT
Output Current
VID = ±200 mV, VO = 1V from rails
±70
IS
Total Supply Current
No Load, VCM = −14.5V
2.0
SR
Slew Rate
(7)
AV = +1, VI = 20V Step, RL = 1 MΩ,
CL = 10 pF
15.2
V/µs
fu
Unity Gain Frequency
RL = 10 MΩ, CL = 20 pF
9
MHz
GBWP
Gain Bandwidth Product
f = 50 kHz
21
en
Input Referred Voltage Noise
f = 2 kHz
15.5
nV/
in
Input Referred Current Noise
f = 2 kHz
1
pA/
THD+N
Total Harmonic Distortion +Noise AV = +2, RL = 100 kΩ, f = 1 kHz
VO = 25 VPP
−93
dB
CT Rej.
Crosstalk Rejection
68
dB
(6)
(7)
f = 3 MHz, Driver RL = 10 kΩ
mA
2.5
3.0
mA
MHz
Short circuit test is a momentary test. Output short circuit duration is infinite for VS ≤ 6V at room temperature and below. For VS > 6V,
allowable short circuit duration is 1.5 ms.
Slew rate is the slower of the rising and falling slew rates. Connected as a Voltage Follower.
Connection Diagram
V
-
3
B
6
4
5
OUT A
OUT B
IN- A
IN- B
IN+ A
IN+ B
V
Figure 1. 8-Pin MSOP (Top View)
6
-
1
8
A
2
3
7
+
7
+
-
+
V
B
+
A
2
+
IN+ A
8
-
IN- A
1
4
6
-
OUT A
5
+
V
OUT B
IN- B
IN+ B
Figure 2. 8-Pin SOIC (Top View)
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Typical Performance Characteristics
Unless otherwise specified, TA = 25°C.
VOS
vs.
VCM (Unit 1)
VOS Distribution
12
0.2
VS = 10V
10
0.1
25°C
0.05
8
VOS (mV)
PERCENTAGE (%)
85°C
0.15
6
4
0
125°C
-0.05
-0.1
-40°C
-0.15
-0.2
2
-0.25
0
-3
-2
-1
0
1
2
VS = 5V
-0.3
-1
3
0
1
2
VOS
vs.
VCM (Unit 2)
5
6
2.5
125°C
125°C
-1.5
85°C
2
25°C
VOS (mV)
-2
VOS (mV)
4
VOS
vs.
VCM (Unit 3)
-1
-2.5
3
VCM (V)
VOS (mV)
-40°C
-3
1.5
1
25°C
-40°C
85°C
0.5
-3.5
125°C
VS = 5V
-4
-1
0
1
2
3
4
VS = 5V
5
0
-1
6
2
3
4
VOS
vs.
VCM (Unit 1)
VOS
vs.
VCM (Unit 2)
5
6
30
35
0
85°C
-0.5
-0.1
125°C
-1
25°C
125°C
-40°C
-1.5
-40°C
VOS (mV)
VOS (mV)
1
VCM (V)
0
-0.2
0
VCM (V)
-0.3
-0.4
-2
-2.5
85°C
-3
-0.5
25°C
-3.5
-0.6
VS = 30V
-0.7
0
5
-5
-4
10
15
20
25
30
-4.5
-5
35
VS = 30V
0
5
10
15
20
25
VCM (V)
VCM (V)
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Typical Performance Characteristics (continued)
Unless otherwise specified, TA = 25°C.
VOS
vs.
VCM (Unit 3)
2
VOS
vs.
VS (Unit 1)
-0.6
125°C
85°C
-0.7
1.5
-0.8
VOS (mV)
VOS (mV)
-0.9
25°C
1
-40°C
0.5
-40°C
-1
-1.1
25°C
-1.1
85°C
-1.2
0
-1.3
-0.5
-5
0
5
10
15
20
25
30
-1.5
35
0
10
20
30
VCM (V)
VS (V)
VOS
vs.
VS (Unit 2)
VOS
vs.
VS (Unit 3)
1
0.9
0.8
25°C
0.8
85°C
85°C
0.7
0.6
VOS (mV)
0.7
25°C
0.5
0.4
-40°C
0.6
-40°C
0.5
125°C
0.4
0.3
0.3
0.2
0.2
0.1
0.1
0
0
0
10
1400
20
30
40
0
10
20
VS (V)
IBIAS
vs.
VCM
IBIAS
vs.
Supply Voltage
40
1300
-40°C
25°C
-
VCM = V + 0.5V
1200
1000
-40°C
85°C
125°C
800
30
VS (V)
1200
600
IBIAS (nA)
IBIAS (nA)
40
1
125°C
0.9
VOS (mV)
125°C
-1.4
VS = 30V
400
200
25°C
1100
1000
125°C
0
85°C
900
-200
-400
VS = 5V
-600
0
1
800
2
3
4
0
5
8
5
10
15
20
25
30
35
40
VS (V)
VCM (V)
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Typical Performance Characteristics (continued)
Unless otherwise specified, TA = 25°C.
IS
vs.
VCM
IS
vs.
VCM
3.5
3.5
VS = 5V
VS = 12V
3
3
125°C
2.5
2.5
2
IS (mA)
IS (mA)
125°C
85°C
1.5
25°C
1
2
85°C
1.5
25°C
1
-40°C
0.5
0.5
-40°C
0
0
-1
0
1
2
3
4
5
6
-1
5
7
9
VCM (V)
IS
vs.
VCM
IS
vs.
Supply Voltage
4
11
13
3.6
VS = 30V
3.4
3.5
3.2
3
125°C
3
125°C
85°C
2.8
IS (mA)
2.5
IS (mA)
3
1
VCM (V)
2
85°C
1.5
25°C
2.6
25°C
2.4
2.2
-40°C
2
1
-40°C
1.8
0.5
1.6
0
-5
1.4
0
5
10
15
20
25
30
35
-
VCM = V + 0.5V
10
0
20
30
10
VS (V)
VCM (V)
IS
vs.
Supply Voltage
Output Swing
vs.
Sinking Current
2.4
10
VS = 5V
2.2
IS (mA)
2
VOUT FROM RAIL (V)
125°C
85°C
1.8
25°C
1.6
1.4
-40°C
1.2
1
125°C
85°C
0.1
25°C
0.01
-40°C
-
VCM = V + 0.5V
1
0
10
20
30
0.001
0.1
40
VS (V)
1
10
100
1000
ISINK (mA)
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Typical Performance Characteristics (continued)
Unless otherwise specified, TA = 25°C.
Output Swing
vs.
Sinking Current
Output Swing
vs.
Sourcing Current
100
10
VS = 5V
VS = 30V
VOUT FROM RAIL (V)
VOUT FROM RAIL (V)
10
1
125°C
85°C
0.1
25°C
1
125°C
25°C
85°C
-40°C
0.1
0.01
-40°C
0.001
0.1
1
10
100
0.01
0.01
1000
10
1
0.1
ISINK (mA)
Output Swing
vs.
Sourcing Current
300
RL = 2 k:
VS = 30V
10
VOUT from RAIL (mV)
VOUT FROM RAIL (V)
250
125°C
1
85°C
-40°C
0.1
125°C
85°C
200
25°C
150
-40°C
100
50
25°C
0
0.01
0.1
1
10
100
0
1000
5
10
Positive Output Swing
vs.
Supply Voltage
100
125°C
25
30
35
RL = 2 k:
90
85°C
125°C
80
120
VOUT from RAIL (mV)
VOUT from RAIL (mV)
20
Negative Output Swing
vs.
Supply Voltage
160
RL = 10 k:
15
VS (V)
ISOURCE (mA)
25°C
100
80
-40°C
60
40
85°C
70
25°C
60
50
-40°C
40
30
20
20
10
0
0
0
5
10
15
20
25
30
35
0
VS (V)
10
1000
Positive Output Swing
vs.
Supply Voltage
100
140
100
ISOURCE (mA)
5
10
15
20
25
30
35
VS (V)
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Typical Performance Characteristics (continued)
Unless otherwise specified, TA = 25°C.
Negative Output Swing
vs.
Supply Voltage
Open Loop Frequency Response with
Various Capacitive Loads
25
140
RL = 10 k:
120
85°C
20
125°C
VOUT from RAIL (mV)
158
VS = 5V
RL = 10 M: 135
100
113
GAIN (dB)
15
25°C
10
-40°C
80
20 pF
90
GAIN
60
50 pF
40
45
20
5
68
PHASE (q)
PHASE
23
200 pF
0
0
100 pF
0
3
0
10
15
20
25
30
-20
35
1k
10k
100k
1M
10M
-23
100M
VS (V)
FREQUENCY (Hz)
VS = 10V
RL = 10 M:
120
100
158
140
135
120
113
100
158
VS = 30V
RL = 10 M: 135
90
50 pF
40
68
45
20
20 pF
80
60
GAIN
40
23
20
0
0
23
0
100 pF
-20
10k
100k
1M
10M
-20
-23
100M
1k
10k
FREQUENCY (Hz)
100k
1M
10M
-23
100M
FREQUENCY (Hz)
Open Loop Frequency Response
vs.
with
Various Resistive Loads
Open Loop Frequency Response
vs.
with
Various Supply Voltages
140
140
158
VS = 30V
CL = 20 pF 135
PHASE
120
100 k:
100
100
60
68
40
1 M:
GAIN
45
GAIN (dB)
90
PHASE (q)
GAIN (dB)
10 k:
80
10 M:
20
23
0
-20
1k
10k
100k
1M
10M
VS = 30V
80
90
VS = 10V
60
68
GAIN
40
45
20
23
0
VS = 5V
-20
1k
-23
100M
135
113
PHASE
0
100 k: 1 M: 10 M:
0
158
RL = 1 M:
CL = 20 pF
120
113
10 k:
68
45
100 pF
1k
90
50 pF
200 pF
200 pF
0
GAIN (dB)
20 pF
GAIN
PHASE (q)
GAIN (dB)
80
60
113
PHASE
PHASE
PHASE (q)
140
Open Loop Frequency Response with
Various Capacitive Loads
PHASE (q)
Open Loop Frequency Response with
Various Capacitive Loads
10k
100k
1M
10M
-23
100M
FREQUENCY (Hz)
FREQUENCY (Hz)
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Typical Performance Characteristics (continued)
Unless otherwise specified, TA = 25°C.
Phase Margin
vs.
Capacitive Load
Open Loop Frequency Response at Various Temperatures
140
GAIN (dB)
80
90
-40qC
60
125qC 68
GAIN
40
45
125qC
20
0
1k
10k
100k
1M
10M
RL = 10 k:
40
30 RL = 100 k: 10 M:
20
10
0
-20
50
23
-40qC
125qC
RL = 2 k:
PHASE MARGIN (°)
PHASE
RL = 600:
60
PHASE (q)
120
100
70
158
VS = 30V
RL = 1 M: 135
CL = 20 pF
113
VS = 5V
0
20
-23
100M
100
1000
CAPACITIVE LOAD (pF)
FREQUENCY (Hz)
Phase Margin
vs.
Capacitive Load
CMRR
vs.
Frequency
70
90
RL = 600:
70
RL = 2 k:
50
60
RL = 10 k:
CMRR (dB)
PHASE MARGIN (°)
VS = 10V
80
60
40
30 RL = 100 k: 10 M:
50
40
30
20
20
10
10
VS = 30V
0
20
100
0
10
1000
100
100
1M
VS = 10V
90
80
80
70
70
-PSRR (dB)
+PSRR (dB)
100k
100
VS = 10V
90
60
50
40
60
50
40
30
30
20
20
10
10
10
100
1k
10k
100k
0
10
1M
100
1k
10k
100k
1M
FREQUENCY (Hz)
FREQUENCY (Hz)
12
10k
−PSRR
vs.
Frequency
+PSRR
vs.
Frequency
0
1k
FREQUENCY (Hz)
CAPACITIVE LOAD (pF)
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Typical Performance Characteristics (continued)
Unless otherwise specified, TA = 25°C.
Step Response for Various Amplitudes
Step Response for Various Amplitudes
100 mVPP
100 mVPP
VS = 10V, AV = +1, CL = 10 pF, RL = 1 M:
VS = 10V, AV = +1, CL = 500 pF, RL = 1 M:
1 VPP
1 VPP
2 VPP
2 VPP
5 VPP
5 VPP
500 ns/DIV
200 ns/DIV
Input Referred Noise Density
vs.
Frequency
Large Signal Step Response for Various Capacitive Loads
100
1000
VOLTAGE NOISE (nV/ Hz)
VS = 10V, AV = +1, RL = 1 M:
5V/DIV
2000 pF
10,000 pF
100
10
CURRENT
VOLTAGE
1
10
CURRENT NOISE (pA/ Hz)
VS = 5V
10 pF
20,000 pF
1
2 Ps/DIV
1
10
100
1k
10k
0.1
100k
FREQUENCY (Hz)
Input Referred Noise Density
vs.
Frequency
Input Referred Noise Density
vs.
Frequency
100
100
1000
10
100
CURRENT
VOLTAGE
1
10
1
1
10
100
1k
10k
VOLTAGE NOISE (nV/ Hz)
VS = 30V
CURRENT NOISE (pA/ Hz)
VOLTAGE NOISE (nV/ Hz)
VS = 10V
0.1
100k
10
100
CURRENT
VOLTAGE
1
10
1
1
FREQUENCY (Hz)
10
100
1k
10k
CURRENT NOISE (pA/ Hz)
1000
0.1
100k
FREQUENCY (Hz)
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Typical Performance Characteristics (continued)
Unless otherwise specified, TA = 25°C.
THD+N
vs.
Output Amplitude (VPP)
THD+N
vs.
Output Amplitude (VPP)
0
0
VS = 5V
-10 f = 1 kHz
VS = 10V
-10 f = 1 kHz
THD+N (dB)
THD+N (dB)
-20 AV = +2
R = 100 k:
-30 L
-40
-50
-60
-20
AV = +2
-30
RL = 100 k:
-40
-50
-60
-70
-70
-80
-80
-90
-90
-100
0.02
0.1
1
-100
0.02
6
OUTPUT AMPLITUDE (VPP)
0.1
THD+N
vs.
Output Amplitude (VPP)
0
130
VS = 30V
VS = 5V
120
CROSSTALK REJECTION (dB)
-20 AV = +2
RL = 100 k:
-30
THD+N (dB)
10 20
Crosstalk
vs.
Frequency
-10 f = 1 kHz
-40
-50
-60
-70
-80
-90
-100
0.02
1
OUTPUT AMPLITUDE (VPP)
RL = 10 k:
110
100
90
80
70
60
50
40
30
0.1
1
10
20
40
1k
10k
100k
1M
10M
100M
FREQUENCY (Hz)
OUTPUT AMPLITUDE (VPP)
Application Information
ADVANTAGES OF THE LM7332
Wide Operating Voltage Range
The LM7332 has an operating voltage from 2.5V to 32V which makes it suitable for industrial and automotive
applications.
RRIO with 100 mA Output Current
The LM7332 takes advantages of National Semiconductor’s VIP3 process which enables high current driving
from the rails. Rail-to-rail output swing provides the maximum possible output dynamic range. The LM7332
eliminates the need to use extra transistors when driving large capacitive loads, therefore reducing the
application cost and space.
-40°C to 125°C Operating Temperature Range
The LM7332 has an operating temperature ranging from -40°C to 125°C, which is Automotive Grade 1, and also
meets most industrial requirements.
SOIC and MSOP Packages
The LM7332 are offered in both the standard SOIC package and the space saving MSOP package. Please refer
to the Physical Dimensions on page 17 for details.
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OUTPUT VOLTAGE SWING CLOSE TO V−
The LM7332’s output stage design allows voltage swings to within millivolts of either supply rail for maximum
flexibility and improved useful range. Because of this design architecture, with output approaching either supply
rail, the output transistor Collector-Base junction reverse bias will decrease. With output less than a Vbe from
either rail, the corresponding output transistor operates near saturation. In this mode of operation, the transistor
will exhibit higher junction capacitance and lower ft which will reduce phase margin. With the Noise Gain (NG = 1
+ RF/RG, RF and RG are external gain setting resistors) of 2 or higher, there is sufficient phase margin that this
reduction in phase margin is of no consequence. However, with lower Noise Gain (<2) and with less than 150
mV to the supply rail, if the output loading is light, the phase margin reduction could result in unwanted
oscillations.
In the case of the LM7332, due to inherent architectural specifics, the oscillation occurs only with respect to the
output transistor at V− when output swings to within 150 mV of V−. However, if this output transistor's collector
current is larger than its idle value of a few microamps, the phase margin loss becomes insignificant. In this case,
300 μA is the required output transistor's collector current to remedy this situation. Therefore, when all the
aforementioned critical conditions are present at the same time (NG < 2, VOUT < 150 mV from supply rails, &
output load is light) it is possible to ensure stability by adding a load resistor to the output to provide the output
transistor the necessary minimum collector current (300 μA).
For 12V (or ±6V) operation, for example, add a 39 kΩ resistor from the output to V+ to cause 300 µA output
sinking current and ensure stability. This is equivalent to about 15% increase in total quiescent power dissipation.
DRIVING CAPACITIVE LOADS
The LM7332 is specifically designed to drive unlimited capacitive loads without oscillations. In addition, the
output current handling capability of the device allows for good slewing characteristics even with large capacitive
loads as shown in Figure 3. The combination of these features is ideal for applications such as TFT flat panel
buffers, A/D converter input amplifiers and power transistor driver.
However, as in most op amps, addition of a series isolation resistor between the op amp and the capacitive load
improves the settling and overshoot performance.
Output current drive is an important parameter when driving capacitive loads. This parameter will determine how
fast the output voltage can change. Referring to Figure 3, two distinct regions can be identified. Below about
10,000 pF, the output Slew Rate is solely determined by the op amp’s compensation capacitor value and
available current into that capacitor. Beyond 10 nF, the Slew Rate is determined by the op amp’s available output
current. An estimate of positive and negative slew rates for loads larger than 100 nF can be made by dividing the
short circuit current value by the capacitor.
100
100µ
VS = 10V
AV = +1
10µ
10
1µ
1
SLEW RATE (V/µS)
±1% SETTLING TIME (S)
SETTLING TIME
100 mVPP STEP
SLEW RATE
100n
10p
100p
1n
10n
100n
1µ
0.1
10µ
CL (pF)
Figure 3. Settling Time and Slew Rate vs. Capacitive Load
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ESTIMATING THE OUTPUT VOLTAGE SWING
It is important to keep in mind that the steady state output current will be less than the current available when
there is an input overdrive present. For steady state conditions, Figure 4 and Figure 5 plots can be used to
predict the output swing. These plots also show several load lines corresponding to loads tied between the
output and ground. In each case, the intersection of the device plot at the appropriate temperature with the load
line would be the typical output swing possible for that load. For example, a 600Ω load can accommodate an
output swing to within 100 mV of V− and to 250 mV of V+ (VS = ±5V) corresponding to a typical 9.65 VPP
unclipped swing.
10
50:
1
1 k:
+
VOUT FROM V (V)
2 k:
600:
200:
100m
100:
VS = 10V
VID = 20 mV
10m
1m
10µ
100µ
20:
10m
100m
IOUT (A)
Figure 4. Steady State Output Sourcing Characteristics with Load Lines
10
20:
2 k:
1 k:
600:
-
VOUT FROM V (V)
1
100m
10m
200:
100: 50:
VS = 10V
VID = -20 mV
1m
10µ
100µ
1m
10m
100m
IOUT (A)
Figure 5. Steady State Output Sinking Characteristics with Load Lines
OUTPUT SHORT CIRCUIT CURRENT AND DISSIPATION ISSUES
The LM7332 output stage is designed for maximum output current capability. Even though momentary output
shorts to ground and either supply can be tolerated at all operating voltages, longer lasting short conditions can
cause the junction temperature to rise beyond the absolute maximum rating of the device, especially at higher
supply voltage conditions. Below supply voltage of 6V, the output short circuit condition can be tolerated
indefinitely.
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With the op amp tied to a load, the device power dissipation consists of the quiescent power due to the supply
current flow into the device, in addition to power dissipation due to the load current. The load portion of the
power itself could include an average value (due to a DC load current) and an AC component. DC load current
would flow if there is an output voltage offset, or the output AC average current is non-zero, or if the op amp
operates in a single supply application where the output is maintained somewhere in the range of linear
operation. Therefore:
PTOTAL = PQ + PDC + PAC
PQ = IS · VS
Op Amp Quiescent Power Dissipation
PDC = IO · (Vr - Vo)
DC Load Power
PAC = See Table 1 below
AC Load Power
where:
IS: Supply Current
VS: Total Supply Voltage (V+ − V−)
VO: Average Output Voltage
Vr: V+ for sourcing and V− for sinking current
Table 1 below shows the maximum AC component of the load power dissipated by the op amp for standard
Sinusoidal, Triangular, and Square Waveforms:
Table 1. Normalized AC Power Dissipated in the Output Stage for Standard Waveforms
PAC (W.Ω/V2)
Sinusoidal
Triangular
Square
50.7 x 10−3
46.9 x 10−3
62.5 x 10−3
The table entries are normalized to VS2/RL. To figure out the AC load current component of power dissipation,
simply multiply the table entry corresponding to the output waveform by the factor VS2/RL. For example, with
±12V supplies, a 600Ω load, and triangular waveform power dissipation in the output stage is calculated as:
PAC = (46.9 x 10−3) · [242/600] = 45.0 mW
(1)
The maximum power dissipation allowed at a certain temperature is a function of maximum die junction
temperature (TJ(MAX)) allowed, ambient temperature TA, and package thermal resistance from junction to ambient,
θJA.
TJ(MAX) - TA
PD(MAX) =
TJA
(2)
For the LM7332, the maximum junction temperature allowed is 150°C at which no power dissipation is allowed.
The power capability at 25°C is given by the following calculations:
For MSOP package:
PD(MAX) =
150°C ± 25°C
= 0.53W
235°C/W
(3)
For SOIC package:
PD(MAX) =
150°C ± 25°C
= 0.76W
165°C/W
(4)
Similarly, the power capability at 125°C is given by:
For MSOP package:
PD(MAX) =
150°C ± 125°C
= 0.11W
235°C/W
(5)
For SOIC package:
PD(MAX) =
150°C ± 125°C
= 0.15W
165°C/W
(6)
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Figure 6 shows the power capability vs. temperature for MSOP and SOIC packages. The area under the
maximum thermal capability line is the operating area for the device. When the device works in the operating
area where PTOTAL is less than PD(MAX), the device junction temperature will remain below 150°C. If the
intersection of ambient temperature and package power is above the maximum thermal capability line, the
junction temperature will exceed 150°C and this should be strictly prohibited.
1.4
POWER CAPABILITY (W)
1.2
M
1
ax
im
um
0.8
Ma
um
0.6
rm
al
the
0.4
0.2
th
e
xim
rm
a
lc
Operating area
0
-40 -20 0
ap
ab
ca
ility
pa
lin
bi
lity
e(
li n
MS
e
(S
O
IC
)
OP
)
20 40 60 80 100 120 140 160
TEMPERATURE (°C)
Figure 6. Power Capability vs. Temperature
When high power is required and ambient temperature can't be reduced, providing air flow is an effective
approach to reduce thermal resistance therefore to improve power capability.
APPLICATION HINTS ON SUPPLY DECOUPLING
The use of supply decoupling is mandatory in most applications. As with most relatively high speed/high output
current op amps, best results are achieved when each supply line is decoupled with two capacitors; a small
value ceramic capacitor (∼0.01 µF) placed very close to the supply lead in addition to a large value Tantalum or
Aluminum capacitor (> 4.7 µF). The large capacitor can be shared by more than one device if necessary. The
small ceramic capacitor maintains low supply impedance at high frequencies while the large capacitor will act as
the charge “bucket” for fast load current spikes at the op amp output. The combination of these capacitors will
provide supply decoupling and will help keep the op amp oscillation free under any load.
SIMILAR HIGH CURRENT OUTPUT DEVICES
The LM6172 has a higher GBW of 100 MHz and over 80 mA of current output. There is also a single version, the
LM6171. The LM7372 has 120 MHz of GBW and 150 mA of current output. The LM7372 is available in a small
pin LLP package, an 8-pin PSOP, and 16-pin SOIC packages with higher power dissipation.
The LME49600 buffer has 250 mA of current out and a 110 MHz bandwidth. The LME49600 is available in a TO263 package for higher power dissipation.
The LM7322 is a rail-to-rail input and output part with a slightly higher GBW of 20 MHz. It has current capability
of 40 mA sourcing and 65 mA sinking, and can drive unlimited capacitive loads. The LM7322 is available in both
MSOP and SOIC packages.
Detailed information on these parts can be found at www.national.com.
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PACKAGE OPTION ADDENDUM
www.ti.com
17-Nov-2012
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package Qty
Drawing
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Samples
(3)
(Requires Login)
LM7332MA/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LM7332MAX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LM7332MM/NOPB
ACTIVE
VSSOP
DGK
8
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LM7332MME/NOPB
ACTIVE
VSSOP
DGK
8
250
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
LM7332MMX/NOPB
ACTIVE
VSSOP
DGK
8
3500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
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Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
17-Nov-2012
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
17-Nov-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
LM7332MAX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
LM7332MM/NOPB
VSSOP
DGK
8
1000
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LM7332MME/NOPB
VSSOP
DGK
8
250
178.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LM7332MMX/NOPB
VSSOP
DGK
8
3500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
17-Nov-2012
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LM7332MAX/NOPB
SOIC
D
8
2500
349.0
337.0
45.0
LM7332MM/NOPB
VSSOP
DGK
8
1000
203.0
190.0
41.0
LM7332MME/NOPB
VSSOP
DGK
8
250
203.0
190.0
41.0
LM7332MMX/NOPB
VSSOP
DGK
8
3500
349.0
337.0
45.0
Pack Materials-Page 2
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