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INTEGRATED CIRCUITS
DATA SHEET
TEA1102; TEA1102T;
TEA1102TS
Fast charge ICs for NiCd, NiMH,
SLA and LiIon
Preliminary specification
Supersedes data of 1997 Oct 09
File under Integrated Circuits, IC03
1999 Jan 27
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
TEA1102; TEA1102T;
TEA1102TS
FEATURES
GENERAL DESCRIPTION
• Safe and fast charging of Nickel Cadmium (NiCd),
Nickel Metal Hydride (NiMH), Lithium Ion (LiIon), and
Sealed Lead Acid (SLA) batteries
The TEA1102x are fast charge ICs which are able fast
charge NiCd and NiMH, SLA and Lilon batteries.
The main fast charge termination for NiCd and NiMH
batteries are ∆T/∆t and peak voltage detection, both of
which are well proven techniques. The TEA1102x
automatically switches over from ∆T/∆t to peak voltage
detection if the thermistor fails or is not present. The ∆T/∆t
detection sensitivity is temperature dependent, thus
avoiding false charge termination. Three charge states
can be distinguished; fast, top-off and trickle.
• Three charge states for NiCd or NiMH; fast, top-off and
trickle or voltage regulation (optional)
• Two charge states for LiIon or SLA; current and voltage
limited
• Adjustable fast charge current [0.5CA to 5CA nominal
(CA = Capacity Amperes)]
• DC top-off and pulsating trickle charge current (NiCd
and NiMH)
Charging Lilon and SLA batteries is completely different.
When the batteries reach their maximum voltage
(adjustable), the TEA1102x switches over from current
regulation to voltage regulation. After a defined time
period, which is dependent on battery capacity and charge
current, charge is terminated. Due to small self discharge
rates of Lilon and SLA batteries, trickle charge can be
omitted.
• Temperature dependent ∆T/∆t battery full detection
• Automatic switch-over to accurate peak voltage
detection (−1⁄4%) if no NTC is applied
• Possibility to use both ∆T/∆t and peak voltage detection
as main fast charge termination
• Support of inhibit during all charging states
• Manual refresh with regulated adjustable discharge
current (NiCd and NiMH)
Several LEDs, as well as a buzzer, can be connected to
the TEA1102x for indicating battery insertion, charge
states, battery full condition and protection mode.
• Voltage regulation in the event of no battery
The TEA1102x are contained in a 20-pin package and are
manufactured in a BiCMOS process, essentially for
integrating the complex mix of requirements in a single
chip solution. Only a few external low cost components are
required in order to build a state of the art charger.
• Support of battery voltage based charge indication and
buzzer signalling at battery insertion, end of refresh and
at full detection
• Single, dual and separate LED outputs for indication of
charge status state
• Minimum and maximum temperature protection
• Time-out protection
• Short-circuit battery voltage protection
• Can be applied with few low-cost external components.
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TEA1102
DIP20
plastic dual in-line package; 20 leads (300 mil)
SOT 146-1
TEA1102T
SO20
plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
plastic shrink small outline package; 20 leads; body width 5.3 mm
SOT339-1
TEA1102TS
1999 Jan 27
SSOP20
2
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
TEA1102; TEA1102T;
TEA1102TS
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VP
supply voltage
5.5
−
11.5
V
IP
supply current
outputs off
−
4
−
mA
∆VNTC/VNTC
temperature rate dependent
(∆T/∆t) detection level
VNTC = 2 V;
Tj = 0 to 50 °C
−
−0.25
−
%
∆Vbat/Vbat
voltage peak detection level with
respect to top value
Vbat = 2 V;
Tj = 0 to 50 °C
−
−0.25
−
%
IVbat
input current battery monitor
Vbat = 0.3 to 1.9 V
−
1
−
nA
Vbat(l)
voltage at pin 19 for detecting low
battery voltage
−
0.30
−
V
IIB
battery charge current
fast charge
10
−
100
µA
top-off mode
−
3
−
µA
IIB(max)
maximum battery charge current
voltage regulation full
−
NiCd and NiMH battery
10
−
µA
IIB(Lmax)
maximum load current
no battery
−
40
−
µA
fosc
oscillator frequency
10
−
200
kHz
Vreg
regulating voltage
LiIon
−
1.37
−
V
SLA
−
1.63
−
V
NiCd and NiMH
(pin Vstb open-circuit)
−
1.325 or
Vstb
−
V
open battery
−
1.9
−
V
1999 Jan 27
3
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1
OSC
20
14
top standby load
fast
charge off current current
1.25/Rref 3 µA 10 µA 40 µA
4.25 V
PROTECTION
CHARGE CONTROL
AND
OUTPUT DRIVERS
3.3 V
2.8 V
4.25 V
156
kΩ
9
1V
12
kΩ
0.75 V
NTC
present
A2
0.3 V
battery
low
1V
end
refresh
1.9 V
nobattery
Tmin
R Q
15
17
A1
18
A3
LS
AO
4×
Tmax
Tcut-off
1.325 V/Vstb 1.37 V 1.63 V 1.9 V
NiCd Llion SLA nobattery
NIMH
36
kΩ
10
A4
100 mV
2
TEA1102
CONTROL LOGIC
8
SUPPLY
BLOCK
VP
13
Vsl
6
7
16
VS
Fig.1 Block diagram.
3
GND
11
FCT
MGC818
PSD
LED
POD
PTD
Preliminary specification
12
5
IB
TEA1102; TEA1102T;
TEA1102TS
TIMER
AND
CHARGE
STATUS
INDICATION
Vbat
DA/AD
CONVERTER
RFSH
refresh
4
NTC
PWM
S
Vbat
Vreg
handbook, full pagewidth
4
MTV
LS
OSC
PWM
SET
Philips Semiconductors
19
Rref
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
Vstb
BLOCK DIAGRAM
1999 Jan 27
Vbat
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
TEA1102; TEA1102T;
TEA1102TS
PINNING
SYMBOL
PIN
DESCRIPTION
Vstb
1
standby regulation voltage input
(NiCd and NiMH)
IB
2
charge current setting
GND
3
ground
PSD
4
program pin sample divider
LED
5
LED output
POD
6
program pin oscillator divider
PTD
7
program pin time-out divider
NTC
8
temperature sensing input
MTV
9
maximum temperature voltage
RFSH
10
refresh input/output
POD 6
15 PWM
FCT
11
fast charge termination and
battery chemistry identification
PTD 7
14 OSC
NTC 8
13 Vsl
VP
12
positive supply voltage
MTV 9
Vsl
13
switched reference voltage output
12 VP
OSC
14
oscillator input
PWM
15
pulse width modulator output
VS
16
stabilized reference voltage
LS
17
loop stability pin
AO
18
analog output
Vbat
19
single-cell battery voltage input
Rref
20
reference resistor pin
1999 Jan 27
handbook, halfpage
Vstb 1
20 Rref
IB 2
19 Vbat
GND 3
18 AO
PSD 4
17 LS
16 VS
LED 5
TEA1102
RFSH 10
11 FCT
MBH067
Fig.2 Pin configuration.
5
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
TEA1102; TEA1102T;
TEA1102TS
voltage peak detection, fast charging is also protected by
temperature cut-off and time-out.
INTRODUCTION
All battery types are initially fast charged with an
adjustable high current. Fast charge termination depends
upon the battery type. With NiCd and NiMH batteries the
main fast charge termination will be the ∆T/∆t (temperature
detection) and/or peak voltage detection and with SLA and
LiIon batteries when the battery voltage reaches
2.45 or 4.1 V respectively.
To avoid false fast charge termination by peak voltage
detection or ∆T/∆t, full detection is disabled during a short
hold-off period at the start of a fast charge session. After
fast charge termination, the battery is extra charged by a
top-off period. During this period of approximately one
hour, the charge current is lowered thus allowing the
battery to be charged to nearly 100% before the system
switches over to standby.
The fast charge period is followed by a top-off period for
NiCd and NiMH batteries and by a fill-up period for SLA
and LiIon batteries. During the top-off period the NiCd and
NiMH batteries are charged to maximum capacity by
reduced adjustable charge current.
After the battery has been charged to nearly 100% by the
top-off period, discharge of the battery (caused by a load
or by the self-discharge) can be avoided by voltage
regulation or by trickle charge.
During the fill-up period the SLA and LiIon batteries are
charged to maximum capacity by a constant voltage and a
gradually decreasing current. The fill-up and top-off period
ends after time-out or one hour respectively.
If batteries are charged in combination with a load, the
TEA1102x can be programmed to apply voltage regulation
during the standby mode. In this way, discharge of the
battery caused by self-discharge or by an eventual load is
avoided. The regulating voltage is adjustable to the
voltage characteristic of the battery. For battery safety the
charge current is limited and the temperature is monitored
during voltage regulation. If a trickle charge is applied, the
self-discharge of the battery will be compensated by a
pulsating charge current.
After the fill-up or top-off period, the TEA1102x switches
over to the standby mode. For NiCd and NiMH batteries
either the voltage regulation or trickle charge mode can be
selected. The voltage regulation mode is selected when
the battery includes a fixed load. Trickle charge prevents a
discharge of the battery over a long period of time.
For SLA and LiIon batteries the charge current is disabled
during standby. The fast charge mode is entered again
when the battery voltage reaches 1.5 V (SLA) or 3 V
(LiIon).
Charging principles
To avoid the so called ‘memory effect’ in NiCd batteries, a
refresh can be manually activated.The discharge current is
regulated by the IC in combination with an external power
transistor. After discharging the battery to 1 V per cell, the
system automatically switches over to fast charge.
CHARGING NiCd/NiMH BATTERIES
CHARGING LiION/SLA BATTERIES
Fast charging of the battery begins when the power supply
voltage is applied and at battery insertion.
Charging these types of batteries differs considerably from
charging NiCd and NiMH batteries. The batteries will be
charged with a charge current of 0.15 CA if their cell
voltage is below the minimum voltage of 0.9 V for Lilon or
0.45 V for SLA. With batteries in good condition the battery
voltage will rise above 0.9 V in a short period of time.
When the batteries are short-circuited the voltage will not
rise above 0.9 V within one hour and the system will
change over to cut-off, which means that the output drivers
AO and PWM are fixed to zero and that battery charge can
only be started again after a power-on reset. If the battery
voltage of a good condition battery is above the minimum
level of 0.9 V the battery will be charged with the
programmed fast charge current.
During fast charge of NiCd and NiMH batteries, the battery
temperature and voltage are monitored. Outside the
initialized temperature and voltage window, the system
switches over to the top-off charge current.
The TEA1102x supports detection of fully charged NiCd
and NiMH batteries by either of the following criteria:
• ∆T/∆t
• Voltage peak detection.
If the system is programmed with ∆T/∆t and Vpeak or, ∆T/∆t
or Vpeak as the main fast charge termination, it
automatically switches to voltage peak detection if the
battery pack is not provided with a temperature sensing
input (NTC). In this way both packages, with and without
temperature sensor, can be used randomly independent of
the applied full detection method. Besides ∆T/∆t and/or
1999 Jan 27
If Lilon or SLA batteries are used, ‘full’ is detected when
the battery voltage reaches 4.1 and 2.45 V respectively.
At this point the TEA1102x switches from current
regulation to voltage regulation (fill-up mode).
6
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
TEA1102; TEA1102T;
TEA1102TS
After the ‘fill-up’ period the charge current is not regulated,
which means that the output drivers AO and PWM are
fixed to zero. When the battery voltage becomes less than
3 V for Lilon and 1.5 V for SLA, the IC enters the fast
charge mode again.
• The standby charge method (NiCd and NiMH), trickle
charge or voltage regulation, is defined by the input pin
Vstb. By biasing this voltage with a set voltage, the output
voltage will be regulated to the Vstb set voltage. If this pin
is connected to VS, or no NTC is connected the system
applies trickle charge.
FUNCTIONAL DESCRIPTION
Conditioning charge method and initializations
If pin RFSH is connected to ground by depressing the
switch, the TEA1102x discharges the battery via an
external transistor connected to pin RFSH. The discharge
current is regulated with respect to the external (charge)
sense resistor (Rsense). End-of-discharge is reached when
the battery is discharged to 1 V per cell. Refreshing the
battery can only be activated during charging of NiCd and
NiMH batteries. When charging LiIon and SLA batteries,
discharge before charge is disabled.
At system switch-on, or at battery insertion, the control
logic sets the initialization mode in the timer block. After
the initialization time the timer program pins can be used
to indicate the charging state using several LEDs.
The charge method is defined at the same time by the
following methods:
The inhibit mode has the main priority. This mode is
activated when the Vstb input pin is connected to ground.
Inhibit can be activated at any charge/discharge state,
whereby the output control signals will be zero, all LEDs
will be disabled and the charger timings will be set on hold.
Table 1 gives an operational summary.
Control logic
The main function of the control logic is to support the
communication between several blocks. It also controls
the charge method, initialization and battery full detection.
The block diagram of the TEA1102x is illustrated in Fig.1.
• If the FCT pin is 0 or 1.25 V, indicating that SLA or LiIon
batteries have to be charged, the battery will be charged
by limit current and limit voltage regulation. Without
identification (FCT pin floating), the system will charge
the battery according to the charge characteristic of
NiCd and NiMH batteries.
Table 1
Functionality of program pins
FUNCTION
Inhibit
LiIon and SLA detection
Refresh (NiCd and NiMH)
∆T/∆t detection
∆T/∆t and voltage peak detection
FCT
NTC
RFSH
Vstb
X(1)
X(1)
X(1)
low
low
X(1)
X(1)
X(1)
not low(2)
X(1)
low
not low
floating
note 3
not low
not low
high
note 3
not low
not low
Voltage peak detection
not low
note 4
not low
not low
Trickle charge at standby
not low
X(1)
not low
high
not low
note 4
not low
not low
not low
note 3
not low
floating(5)
Voltage regulation at standby
Notes
1. Where X = don’t care.
2. Not low means floating or high.
3. The NTC voltage has been to be less than 3.3 V, which indicates the presence of an NTC.
4. The NTC voltage is outside the window for NTC detection.
5. Vstb has to be floating or set to a battery regulating voltage in accordance with the specification.
1999 Jan 27
7
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
charged with approximately 0.15 Q. In this way the battery
is fully charged before the system switches over to
standby.
Supply block
The supply block delivers the following outputs:
• A power-on reset pulse to reset all digital circuitry at
battery insertion or supply switch-on. After a general
reset the system will start fast charging the battery.
When pin 1 (Vstb) is connected to VS, or no NTC is
connected the system compensates the (self) discharge of
the battery by trickle charge. The trickle charge current will
be pulsating, defined by the following equation:
–6
15
I trickle × R sense = R b × ------ × 10
(5)
16
• A 4.25 V stabilized voltage source (VS) is externally
available. This source can be used to set the thermistor
biasing, to initialize the programs, to supply the external
circuitry for battery voltage based charge indication and
to supply other external circuitry.
During the non current periods at trickle charge the charge
current is regulated to zero, so that the current for a load
connected in series across the battery with the sense
resistor will be supplied by the power supply and not by the
battery.
• A 4.25 V bias voltage (Vsl) is available for use for more
indication LEDs. This output pin will be zero during the
initialization period at start-up, thus avoiding any
interference of the extra LEDs when initializing.
If at pin 1 (Vstb) a reference voltage is set in accordance
with the specification, and no NTC is connected the charge
mode will switch over from current to voltage regulation
after top-off. The reference regulating voltage can be
adjusted to the battery characteristic by external resistors
connected to pin Vstb.
Charge control
The charge current is sensed via a low-ohmic resistor
(Rsense), see Fig.4. A positive voltage is created across
resistor Rb by means of a current source Iref which is set by
Rref in the event of fast charge and by an internal bias
current source in the event of top-off and trickle charge
(IIB), see Fig.1. The positive node of Rb will be regulated to
zero via error amplifier A1, which means that the voltage
across Rb and Rsense will be the same. The fast charge
current is defined by the following equation:
I fast × R sense = R b × I ref
(1)
This reference voltage has to be selected in such a way
that it equals the rest voltage of the battery. By using
voltage regulation, the battery will not be discharged at a
load occurrence. If the Vstb input pin is floating, the
TEA1102x will apply voltage regulation at 1.325 V during
the standby mode (NiCd and NiMH). The current during
voltage regulation is limited to 0.5 CA. If the battery charge
current is maximized to 0.5 CA for more than 2 hours
charging will be stopped. Moreover, if the temperature
exceeds Tmax, charging will be stopped completely.
As voltage regulation is referred to one cell, the voltage on
the Vbat pin must be the battery voltage divided by the
number of cells (NiCd and NiMH).
The output of amplifier A1 is available at the loop stability
pin LS, consequently the time constant of the current loop
can be set. When Vpeak (NiCD and NiMH) is applied, the
current sensing for the battery voltage will be reduced,
implying that the charge current will be regulated to zero
during:
t sense = 2
10
× POD × t osc
(2)
For LiIon or SLA batteries, the battery is extra charged
after full detection by constant voltage regulation during a
certain fill-up period. LiIon and SLA batteries have to
identify themselves by an extra pin on the battery pack to
ground, which is connected via a resistor to pin 11 (FCT).
As the battery voltage sense (Vbat) has to be normalized to
a one cell voltage of NiCd and NiMH packages, the Vbat
input pin will be regulated to 1.367 and 1.633 V during
fill-up for LiIon and SLA respectively. In this way this
system can accept a mixture of one LiIon, two SLA and
three NiCd or NiMH packages.
Actually battery voltage sensing takes place in the last
oscillator cycle of this period.
To avoid modulation on the output voltage, the top-off
charge current is DC regulated, defined by the following
equation:
I top – off × R sense = R b × 3 × 10
–6
(3)
where:
t top – off = 2
27
× TOD × t osc
(4)
After fill-up, charging of LiIon or SLA batteries is disabled.
The battery charge is then fixed to zero, ensuring
maximum life-cycle of the battery.
The top-off charge current will be approximately 0.15 CA,
which maximizes the charge in the battery under safe and
slow charging conditions. The top-off charge period will be
approximately one hour, so the battery will be extra
1999 Jan 27
TEA1102; TEA1102T;
TEA1102TS
Because of a fixed zero charge current, the battery will be
discharged if a load is applied.
8
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
To ensure an eventual load during all charging states, the
fast charge mode will be entered again if the battery
voltage drops below 15 V for SLA or 3 V for Lilon.
The time-out timer is put on hold by low voltage,
temperature protection and during the inhibit mode.
The Programmable Oscillator Divider (POD) enables the
oscillator frequency to be increased without affecting
the sampling time and time-out. Raising the oscillator
frequency will reduce the size of the inductive components
that are used.
When charging, the standby mode (LiIon and SLA) can
only be entered after a certain period of time depending on
time-out. The same applies for charging NiCd or NiMH
batteries. To support full test of the TEA1102x at
application, the standby mode is also entered when
Vbat < Vbat(l) at fill-up or top-off respectively.
At fast charging, after battery insertion, after refresh or
supply interruption, the full detector will be disabled for a
period of time to allow a proper start with flat or inverse
polarized batteries. This hold-off period is disabled at fast
charging by raising pin Vstb to above ±5 V (once).
So for test options it is possible to slip the hold-off period.
The hold-off time is defined by the following equation:
Timer
The timing of the circuit is controlled by the oscillator
frequency.
The timer block defines the maximum charging time by
‘time-out’. At a fixed oscillator frequency, the time-out time
can be adapted by the Programmable Time-out Divider
(PTD) using the following equation.
t time – out = 2
Table 2
26
× POD × PTD × t osc
TEA1102; TEA1102T;
TEA1102TS
t hold – off = 2
–5
× t time – out
(7)
Table 2 gives an overview of the settings of timing and
discharge/charge currents.
(6)
Timing and current formulae
SYMBOL
DESCRIPTION
FORMULAE
tosc
timing
see Fig.3
Tsampling (∆T/∆t)
NTC voltage sampling frequency
217 × POD × PSD × tosc
Tsampling (Vpeak)
battery voltage sampling frequency
216 × POD × tosc
ttop-off
227 × POD × tosc
ttime-out
226 × POD × PTD × tosc
thold-off
2−5 × ttime-out
tLED
214 × POD × tosc
inhibit or protection
tsense
210 × POD × tosc
tswitch
221 × POD × PTD × tosc
Ifast
charge/discharge currents
V ref
Rb
----------------- × ---------R sense R ref
Itop-off
Rb
–6
----------------- × 3 × 10
R sense
Itrickle
Rb
–6
15
----------------- × ------ × 10
R sense 16
Iload-max
Rb
–6
----------------- × 40 × 10
R sense
IRFSH
100 mV
-------------------R sense
1999 Jan 27
9
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
TEA1102; TEA1102T;
TEA1102TS
PTD programming
handbook, full pagewidth
200
:1
:2
:4
(GND) (n.c.) (+VS)
12.5
(R23 min)
125
(R23 max)
fosc
(kHz)
prefered
oscillator
range
(POD = +VS)
160
C4
(pF)
120
68
prefered
oscillator
range
(POD = n.c.)
80
100
150
prefered
40
oscillator
range
(POD = GND)
0
0
30
220
390
560
820
1500
60
90
120
150
180
ttime-out (min)
10
30
50
70
90
110
130
R23 (kΩ)
MGD280
Fig.3 ttime-out as a function of R23 and PTD with C4 as parameter.
• Fast charge (LED on)
LED indication
• 100% or refresh (LED off)
With few external components, indication LEDs can be
connected to the program pins and the LED pin of the
TEA1102x. These program pins change their function from
an input to an output pin after a short initialization time at
system switch-on or battery insertion. Output pin Vsl
enables the external LEDs to be driven and avoids
interaction with the programming of the dividers during the
initialization period.
• Protection or inhibit (LED floating).
The refresh can be indicated by an extra LED connected
to pin 4 (PSD). A buzzer can also be driven from the
TEA1102x to indicate battery insertion end of refresh or full
battery.
AD/DA converter
The applied LEDs indicate:
• Refresh
When battery full is determined by peak voltage detection,
the Vbat voltage is sampled at a rate given by the following
equation:
• Fast charge
t sampling ( V peak ) = 2
• Protection
• 100%
× POD × t osc
(8)
The analog value of a Vbat sample is then digitized and
stored in a register. On the following sample, the digitized
value is converted back to the analog value of Vbat and
compared with the ‘new’ Vbat sample.
• No-battery.
The LED output pin can also indicate the charging state by
one single LED. The indication LED can be connected
directly to the LED output. This single LED indicates:
1999 Jan 27
16
10
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
TEA1102; TEA1102T;
TEA1102TS
At an increase of the battery voltage the 14-bit
analog-to-digital convertor (ADC) is refreshed with this
new value. Therefore, the digitized value always
represents the maximum battery voltage. A decreased
Vbat voltage is not stored, but is compared to the stored
value.
Output drivers
Full is detected when the voltage decrease of Vbat is 1⁄4%
of the stored peak battery value. To avoid interference due
to the resistance of the battery contacts during battery
voltage sensing, the charge current is regulated to zero
during t = 210 × POD × tosc, via the regulation pins AO and
PWM. At the last period, the Vbat voltage is sensed and
stored in a sample-and-hold circuit. This approach
ensures very accurate detection of the battery full
condition (minus 1⁄4%).
The analog control voltage output at pin 18 (AO) can be
used to drive an opto-coupler in mains separated
applications when an external resistor is connected
between AO and the opto-coupler. The maximum current
through the opto-coupler diode is 2 mA. The voltage gain
of amplifier A2 is typical 11 dB (times 3.5). The DC voltage
transfer is given by the following equation:
The charge current regulation signal is available at two
output pins, AO and PWM.
ANALOG OUTPUT
Vao = 3.5 × (VLS − 1.35).
The AO output can be used for:
When battery full is determined by ∆T/∆t, the voltage on
the NTC pin is used as the input voltage to the AD/DA
convertor. The sampling time at ∆T/∆t sensing is given by
the following equation:
17
∆T
t sampling  -------  = 2 × POD × PSD × t osc
(9)
∆t
• Linear (DC) applications
• Not mains isolated SMPS with a separate controller
• Mains isolated SMPS, controlled by an opto-coupler.
PULSE WIDTH MODULATOR (PWM)
The LS voltage is compared internally with the oscillator
voltage to deliver a pulse width modulated output at PWM
(pin 15) to drive an output switching device in a SMPS
converter application via a driver stage. The PWM output
is latched to prevent multi-pulsing. The maximum duty
factor is internally fixed to 79% (typ.). The PWM output can
be used for synchronization and duty factor control of a
primary SMPS via a pulse transformer.
After this initialized sample time the new temperature
voltage is compared to the preceding AD/DA voltage and
the AD/DA is refreshed with this new value. A certain
increase of the temperature is detected as full battery,
depending on the initialization settings. The decision of full
detection by ∆T/∆t or Vpeak is digitally filtered thus avoiding
false battery full detection.
1999 Jan 27
11
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
TEA1102; TEA1102T;
TEA1102TS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); note 1.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Voltages
VP
positive supply voltage
−0.5
−
11.5
V
VoLED
output voltage at pin 5
−0.5
−
15
V
Vn
voltage at pins PWM, LS and NTC
−0.5
−
+VS
V
VIB
voltage at pin 2
−0.5
−
1.0
V
IVS
current at pin 16
−3
−
+0.01
mA
IVsl
current at pin 13
−1
−
+0.3
mA
IoLED
output current at pin 5
−
−
12
mA
Currents
IAO
output current at pin 18
−10
−
+0.05
mA
IoPWM
output current at pin 15
−15
−
+14
mA
IRref
current at pin 20
−1
−
+0.01
mA
IP
positive supply current
Tj < 100 °C
−
−
30
mA
IP(stb)
supply standby current
VP = 4 V
−
35
45
µA
total power dissipation
Tamb = +85 °C
Dissipation
Ptot
SOT146-1
−
−
1.2
W
SOT163-1
−
−
0.6
W
SOT339-1
−
−
0.45
W
Temperatures
Tamb
operating ambient temperature
−20
−
+85
°C
Tj
junction temperature
−
−
+150
°C
Tstg
storage temperature
−55
−
+150
°C
Note
1. All voltages are measured with respect to ground; positive currents flow into the IC; all pins not mentioned in the
voltage list are not allowed to be voltage driven. The voltage ratings are valid provided that other ratings are not
violated; current ratings are valid provided that the power rating is not violated.
QUALITY SPECIFICATION
General quality specification for integrated circuits: SNW-FQ-611E.
1999 Jan 27
12
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
TEA1102; TEA1102T;
TEA1102TS
CHARACTERISTICS
VP = 10 V; Tamb = 25 °C; Rref = 62 kΩ; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies; pins VP, VS, Rref and Vsl
VP
supply voltage
5.5
−
11.5
V
IP
supply current
outputs off; VP = 11.5 V
−
4
6
mA
Istb
standby current
VP = 4 V
−
35
45
µA
Vclamp
clamping voltage (pin 12)
Iclamp = 30 mA
11.5
−
12.8
V
Vstart
start voltage
6.1
6.4
6.7
V
VLSP
low supply protection level
5.1
5.3
5.5
V
VS
source voltage (stabilized)
IS = 2 mA
4.14
4.25
4.36
V
VSL
LED source voltage
ILED = 50 µA
4.05
4.25
4.45
V
Vref
reference voltage
Iref = 20 µA; VP = 10 V
1.21
1.25
1.29
V
TCVref
temperature coefficient of the
reference voltage
Tamb = 0 to 45 °C;
Iref = 20 µA; Vref = 1.25 V
0
±60
±120
ppm/K
∆Vref/∆VP
power supply rejection ratio of f = 100 Hz; VP = 8 V;
the reference voltage
∆VP = 2 V (p-p)
−46
−
−
dB
∆Vref
load rejection of source
voltage
−
−
5
mV
IRref
current range of reference
resistor
10
−
100
µA
Iref = 10 µA
0.93
1.03
1.13
Iref = 100 µA
∆IS = 20 mA; VP = 10 V
Charge current regulation; pins IB and Rref
IIB/Iref
VthIB
fast charge ratio
threshold voltage at pin IB
VIB = 0
0.93
1.0
1.07
Tamb = 25 °C
−2
−
+2
mV
Tamb = 0 to 45 °C
−3
−
+3
mV
IIB
charge current
top-off mode; VIB = 0
2.6
3.2
3.8
µA
IIB(max)
maximum charge current
voltage regulation full
NiCd/NiMH battery; VIB = 0
9
10.5
12
µA
IIB(Lmax)
maximum load current
open battery; VIB = 0
34
42
50
µA
IIB(LI)
input leakage current
currentless mode
−
−
170
nA
Refresh; pin RFSH
VRsense
sense resistor voltage
Irefresh = VIB/ Rsense; refresh
mode; Irefresh = 18 mA
75
100
125
mV
VRFSH
refresh voltage for
programming start of refresh
NiCd/NiMH
0
−
250
mV
Vbat
voltage at pin Vbat for
detecting end of refresh
NiCd/NiMH
0.96
1.0
1.04
V
Isource(max)
maximum source current
VIB = 75 mV; VP = 10 V;
VRFSH = 2.7 V; Tamb = 25 °C
1.4
2
2.6
mA
1999 Jan 27
13
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
SYMBOL
PARAMETER
VRFSH(max)
maximum refresh voltage
VRFSH(off)
voltage at pin RFSH when
refresh is off
TEA1102; TEA1102T;
TEA1102TS
CONDITIONS
IRFSH = 1 mA
MIN.
TYP.
MAX.
UNIT
2.7
−
−
V
700
770
840
mV
0.9
1
1.1
V
Temperature related inputs; pins NTC and MTV
VNTCh
input voltage at pin NTC for
detecting high temperature
0.95MTV MTV
1.05MTV V
VNTCh(hy)
hysteresis of VNTCh
−
80
−
mV
VNTCl
input voltage at pin NTC,
detecting low temperature
2.7
2.8
2.9
V
VNTCl(hy)
hysteresis of VNTCl
−
75
−
mV
VNTC(co)
input voltage at pin NTC for
detecting temperature cut-off
0.7MTV
0.75MTV 0.8MTV
V
VNTC(bat)
maximum input voltage at pin
NTC for detecting battery with
NTC
3.22
3.3
3.38
V
INTC
input current at pin NTC
VNTC = 2 V
−5
−
+5
µA
VMTV
voltage level at pin MTV
default (open-circuit)
0.95
1
1.05
V
0.5
−
2.5
V
VNTC = 2 V; Tj = 0 to 50 °C
−
−0.25
−
%
LiIon; Iref = 20 µA
1.34
1.37
1.40
V
SLA; Iref = 20 µA
1.59
1.63
1.67
V
NiCd and NiMH;
pin Vstb open-circuit
1.30
1.325
1.35
V
NiCd and NiMH; Vstb = 1.5 V
0.99Vstb
Vstb
1.01Vstb
V
∆VNTC/VNTC ∆T/∆t detection level
pin MTV open-circuit
MTV setting
Voltage regulation
Vreg
regulation voltage
open battery
1.86
1.9
1.94
V
TCVreg
temperature coefficient of
regulation voltage
Vreg = 1.37 V;
Tamb = 0 to 45 °C
0
±60
±120
ppm/K
gm
transconductance of
amplifier A3
Vbat = 1.9 V;
no battery mode
−
2.0
−
mA/V
Program pin Vstb
Vstb
open voltage at pin Vstb
1.30
1.325
1.35
V
Vstb(im)
voltage at pin Vstb for
programming inhibit mode
0
−
0.8
V
Vstb(st)
voltage at pin Vstb for
programming voltage
regulation at standby
NiCd and NiMH
1.0
−
2.2
V
Vstb(tc)
voltage at pin Vstb for
NiCd and NiMH
programming trickle charge at
standby
2.6
−
VS
V
1999 Jan 27
14
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
SYMBOL
PARAMETER
TEA1102; TEA1102T;
TEA1102TS
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Program pins; PSD, POD and PTD
V4,6,7
voltage level at pins PSD,
POD or PTD
V4,6,7(1)
default (open-circuit)
1.9
2.1
2.3
V
voltage level at pins PSD,
POD or PTD for programming
the divider = 1
0
−
1.2
V
V4,6,7(2)
voltage level at pins PSD,
POD or PTD for programming
the divider = 2
1.6
−
2.5
V
V4,6,7(4)
voltage level at pins PSD,
POD or PTD for programming
the divider = 4
3.1
−
VS
V
IPODsink
protection current for
multi-LED indication
VPOD = 1.5 V
8
10
12
mA
IPTDsink
full battery current for
multi-LED indication
VPTD = 1.5 V
8
10
12
mA
IPSDsink
refresh current for multi-LED
indication
VPSD = 1.5 V
8
10
12
mA
ILI
input leakage current
VPOD = 4.25 V;
0
VPTD = 4.25 V; VPSD = 4.25 V
−
50
µA
Program pin FCT
VFCT(SLA)
voltage level for detecting an
SLA battery
0
−
0.7
V
VFCT(Lilon)
voltage level for detecting a
LiIon battery
0.9
−
1.6
V
VFCT(or)
voltage level for programming NiCd and NiMH
∆T/∆t or Vpeak as fast charge
termination
2.0
−
3.3
V
VFCT(and)
voltage level for programming NiCd and NiMH
∆T/∆t and Vpeak as fast
charge termination
3.7
−
VS
V
VFCT
voltage level at pin FCT
2.3
2.6
2.9
V
default (open-circuit)
Program pin LED
VLED(m)
output voltage level for
programming multi-LED
indication
0
−
2.5
V
VLED(s)
output voltage level for
programming single LED
indication
3.1
−
VP
V
Isink(max)
maximum sink current
VLED = 1.5 V
8
10
12
mA
ILI(LED)
input leakage current
VLED = 10 V
0
−
70
µA
0
−
5
µA
Vo(max)
maximum output voltage
−
−
15
V
VLED = 0.6 V
1999 Jan 27
15
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
SYMBOL
PARAMETER
TEA1102; TEA1102T;
TEA1102TS
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Output drivers; AO, LS and PWM
IAO(source)
analog output source current
VAO = 3 V (p-p); VLS = 2.8 V
−9
−
0
mA
IAO(sink)
analog output sink current
VAO = 3 V (p-p); VLS = 1.2 V
50
−
−
µA
gm1
transconductance of
amplifier A1
VIB = 50 mV
−
250
−
µA/V
Gv1,2
voltage gain of amplifiers
A1 and A2
VAO = 3 V (p-p)
−
72
−
dB
Gv2
voltage gain of amplifier A2
VAO = 2 V (p-p)
−
11
−
dB
ILS(source)
maximum source current
(pin LS)
VLS = 2.25 V
−25
−21
−16
µA
ILS(sink)
maximum sink current
(pin LS)
VLS = 2.25 V
16
21
25
µA
IOH(PWM)
HIGH level output current
VPWM = 3 V
−19
−15
−11
mA
IOL(PWM)
LOW level output current
VPWM = 0.7 V
10
14
18
mA
δPWM
maximum duty factor
−
79
−
%
−
1
−
nA
0.3
−
2
V
−
−0.25
−
%
−
0.6
−
mV
0.25
0.30
0.35
V
Battery monitor; Vbat
IVbat
battery monitor input current
Vbat
voltage range of Vpeak
detection
∆Vbat/Vbat
Vpeak detection level with
respect to top level
∆Vbat
voltage resolution for Vpeak
Vbat = 1.85 V
Vbat = 1.85 V; Tj = 0 to 50 °C
Protections; Vbat
Vbat(l)
maximum voltage at pin Vbat
for detecting low battery
voltage
Oscillator; pin OSC
Vosc(H)
HIGH level oscillator
switching voltage
−
2.5
−
V
Vosc(L)
LOW level oscillator switching
voltage
−
1.5
−
V
fosc(min)
minimum oscillator frequency
20.9
23
25.1
kHz
fosc(max)
maximum oscillator frequency Rref = 12.5 kΩ; Cosc = 400 pF 158
174
190
kHz
1999 Jan 27
Rref = 125 kΩ; Cosc = 400 pF
16
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D8
400 µH BYV28
(only for
more than
3 cells
R1
1
kΩ
TR3
BC337
R3
1.5 kΩ only for
VI (DC)>13V
Vsl
R4 3.9 kΩ
D1
BYD74D
R5
750
Ω
D2
single
multi
LED
D4
nobattery
protection
D3
100%
D6
refresh
5
16
VP
VS
C3 100 nF
R16
4.25 V
8.2 kΩ
33 kΩ
VS
:4
R6
:1
33 kΩ
POD
8
VS
:4
R8
9
:1
33 kΩ
PTD
NTC
R17 130 kΩ
6
GND
7
11
VS
:4
R10
:1
33 kΩ
TEA1102
PSD
PWM
TR4
TIP110
RFSH
LS
6 kΩ
R12
0Ω
(Rb)
IB
20
Vstb
R22
16 kΩ
15 kΩ
12 kΩ
∆T/∆t
or
Vpeak
Vbat
47 kΩ
Rref
NiCd 3
NiMH 3
SLA 2
Lilon 1
2
3
Lilon
SLA
LOAD
Vreg
adjust.
NiCd
NiMH
3/6/9 cell
NiCd 6
NiMH 6
SLA 4
Lilon 2
SLA
2/4/6 cell
NiCd 9
NiMH 9
SLA 6
Lilon 3
Lilon
1/2/3 cell
OSC
(3)
17
R13(2)
5.1 kΩ
(0.15A top off)
NTC
10 kΩ
(25 oC)
24 kΩ
R21
∆T/∆t
and
Vpeak
10
14
R18
GND
C4
220
pF
R23
62 kΩ
(1A fast
charge)
R25
40 kΩ
(0.1%)
R26
8 kΩ
(0.1%)
R27
8 kΩ
(0.1%)
C5
470
µF
R28
10 kΩ
(0.1%)
Rsense
(1A refresh)
R14 0.1 Ω(1)
Fig.4 Basic test board diagram.
Preliminary specification
1.25 × R13
(3) R23 = ----------------------------------------------R14 × I fast – ch arg e
MBH068
TEA1102; TEA1102T;
TEA1102TS
100 mV
100 mV
(1) R14 = -------------------- or R14 = ----------------------------- if not applicable.
I fast – ch arg e
I refresh
C2
1.5 nF
18
handbook, full pagewidth
17
AO
linear mode
19
adjust.
R20
P2
15
R19
75 kΩ
FCT
4
GND
R11
refresh
1
P1
Tmax
47 kΩ
MTV
GND
SMPS mode
TR2
BC337
R14 × I top – off
(2) R13 = -----------------------------------3 µA
12
R9
33 kΩ
C1
100 µF
R2
62 Ω
13
R7
33 kΩ
D6
BAW62
LED
fast
D5
R24
80 kΩ
(0.1%)
R15
270 Ω
Philips Semiconductors
L1
(SMPS only)
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
TR1
BD231
APPLICATION INFORMATION
1999 Jan 27
VI (DC)
7 to 18 V
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
handbook,Vfull(DC)
pagewidth
I
7 to 11.5 V
TEA1102; TEA1102T;
TEA1102TS
(D2 for more than 3 NiCD cells)
TR1 BD231
+ battery
(Rsupply = 270 Ω for more than 3 NiCD cells)
R2
1.5
kΩ
R1
1 kΩ
Vsl
13
12
VP
LED
C1
100 µF
VS
POD
:1
GND
:4
VS
PTD
GND
:4
VS
6
8
VS
NTC
R6
10 kΩ
MTV
R7
7
11
4.25 V
FCT
SLA = 0 Ω
Lilion = 4.3 kΩ
NiCd/NiMH = ∞
C5
470 µF
TEA1102
PSD
4
1
15
19
Vstb
NiCd
NiMH
3 cells
GND
PWM
AO
TR2
BC337
R3
180 Ω
16
5
9
:1
:1
C3
100 nF
D1
:4
R10
200 kΩ
(1%)
RFSH
LS
18
20
Vbat
SLA
2 cells
Rref
Lilon
1 cell
10
14
OSC
17
C2 1.5 nF
IB
(Rb)
3
2
R4
5.1 kΩ
(75 mA top off)
GND
C4
220 pF
(fosc =
75 kHz)
R5 0.22 Ω
R9
100 kΩ
(0.1%)
− battery
Rsense
Fig.5 Linear application diagram.
1999 Jan 27
R8
62 kΩ
(0.5 A
fast
charge)
18
MBH069
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
TR4
D8
refresh
+BAT
D1
R1
C1
TR3
+Vin
D7
refresh
R11
fast-charge
D4
R6
protection
R7
D5
R8
100%
D6
R4 R3 I
b
Vbat
1
R13
D2
D3
number
of
cells
TR2
PWM R2
Vsl C6
MTV
P1
C3
R19
NTC
R18
1L 2L 3L
LIN
C2
C7
+Vs
R9
no-battery
R26 R27
R23
R15
GND
:4PSD:1 S-LED-M :4POD:1 PTD
R10
R28
P2
Vstb
R5
R24
LIN
D9 R25
D10
R30
L1
PWM
TR1
−Vin
C5
R16
NTC
R17
C4
R29
handbook, full pagewidth
TEA1102; TEA1102T;
TEA1102TS
R12
R22
R21
R20
R14
Vsense
FCT
SLA
Li-Ion
dT/dt or V
dT/dt and V
−BAT
GND
TEA1102 TEST BOARD, V2 JB D&A NIJMEGEN
MBH073
Fig.6 Component side of printed-circuit board (test board).
1999 Jan 27
19
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
TEA1102; TEA1102T;
TEA1102TS
86.35
handbook, full pagewidth
81.28
MBH072
Dimensions in mm.
Fig.7 Track side of printed-circuit board (test board).
1999 Jan 27
20
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
TEA1102; TEA1102T;
TEA1102TS
handbook, full pagewidth
TR1
+battery
TR2
R1
R10
R8
MJIN CIC A&D BJ RAENIL 2011AET
+Vin
C5
1
R3
PSD
D1
R9
C2
R2
POD
PTD
R4
R7
:1 :4
C1
R6
R5
−Vin
C4
C3
−battery
MBH071
Fig.8 Component side of printed-circuit board (linear application) scale 1 : 1.
TEA1102 LINEAR JB D&A CIC NIJM
handbook, full pagewidth
MBH070
Fig.9 Track side of printed-circuit board (linear application) scale 1 : 1.
1999 Jan 27
21
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
TEA1102; TEA1102T;
TEA1102TS
PACKAGE OUTLINES
DIP20: plastic dual in-line package; 20 leads (300 mil)
SOT146-1
ME
seating plane
D
A2
A
A1
L
c
e
Z
b1
w M
(e 1)
b
MH
11
20
pin 1 index
E
1
10
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
min.
A2
max.
b
b1
c
mm
4.2
0.51
3.2
1.73
1.30
0.53
0.38
0.36
0.23
26.92
26.54
inches
0.17
0.020
0.13
0.068
0.051
0.021
0.015
0.014
0.009
1.060
1.045
D
e
e1
L
ME
MH
w
Z (1)
max.
6.40
6.22
2.54
7.62
3.60
3.05
8.25
7.80
10.0
8.3
0.254
2.0
0.25
0.24
0.10
0.30
0.14
0.12
0.32
0.31
0.39
0.33
0.01
0.078
(1)
E
(1)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
SOT146-1
1999 Jan 27
REFERENCES
IEC
JEDEC
EIAJ
SC603
22
EUROPEAN
PROJECTION
ISSUE DATE
92-11-17
95-05-24
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
TEA1102; TEA1102T;
TEA1102TS
SO20: plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
D
E
A
X
c
HE
y
v M A
Z
11
20
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
1
10
e
bp
detail X
w M
0
5
10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
mm
2.65
0.30
0.10
2.45
2.25
0.25
0.49
0.36
0.32
0.23
13.0
12.6
7.6
7.4
1.27
10.65
10.00
1.4
1.1
0.4
1.1
1.0
0.25
0.25
0.1
0.9
0.4
inches
0.10
0.012 0.096
0.004 0.089
0.01
0.019 0.013
0.014 0.009
0.51
0.49
0.30
0.29
0.050
0.419
0.043
0.055
0.394
0.016
0.043
0.039
0.01
0.01
0.004
0.035
0.016
Z
(1)
θ
8o
0o
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT163-1
075E04
MS-013AC
1999 Jan 27
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
95-01-24
97-05-22
23
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
TEA1102; TEA1102T;
TEA1102TS
SSOP20: plastic shrink small outline package; 20 leads; body width 5.3 mm
D
SOT339-1
E
A
X
c
HE
y
v M A
Z
20
11
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
1
10
w M
bp
e
detail X
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
Z (1)
θ
mm
2.0
0.21
0.05
1.80
1.65
0.25
0.38
0.25
0.20
0.09
7.4
7.0
5.4
5.2
0.65
7.9
7.6
1.25
1.03
0.63
0.9
0.7
0.2
0.13
0.1
0.9
0.5
8
0o
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
OUTLINE
VERSION
SOT339-1
1999 Jan 27
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
93-09-08
95-02-04
MO-150AE
24
o
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
TEA1102; TEA1102T;
TEA1102TS
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
SOLDERING
Introduction
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
WAVE SOLDERING
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mount components are mixed on
one printed-circuit board. However, wave soldering is not
always suitable for surface mount ICs, or for printed-circuit
boards with high population densities. In these situations
reflow soldering is often used.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
Through-hole mount packages
SOLDERING BY DIPPING OR BY SOLDER WAVE
• For packages with leads on two sides and a pitch (e):
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
The footprint must incorporate solder thieves at the
downstream end.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
MANUAL SOLDERING
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Surface mount packages
REFLOW SOLDERING
MANUAL SOLDERING
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
1999 Jan 27
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
25
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
TEA1102; TEA1102T;
TEA1102TS
Suitability of IC packages for wave, reflow and dipping soldering methods
SOLDERING METHOD
MOUNTING
PACKAGE
WAVE
suitable(2)
Through-hole mount DBS, DIP, HDIP, SDIP, SIL
Surface mount
HLQFP, HSQFP, HSOP, SMS
not
PLCC(4),
suitable(3)
REFLOW(1)
DIPPING
−
suitable
suitable
−
suitable
suitable
−
LQFP, QFP, TQFP
not recommended(4)(5)
suitable
−
SQFP
not suitable
suitable
−
suitable
−
SO
SSOP, TSSOP, VSO
not
recommended(6)
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jan 27
26
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and
LiIon
NOTES
1999 Jan 27
27
TEA1102; TEA1102T;
TEA1102TS
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
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Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
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Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
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Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 489 4339/4239, Fax. +30 1 481 4240
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1999
SCA61
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
465002/750/04/pp28
Date of release: 1999 Jan 27
Document order number:
9397 750 04793
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