VN05H скачать даташит

VN05H скачать даташит
VN05H

HIGH SIDE SMART POWER SOLID STATE RELAY
T YPE
VN05H
■
■
■
■
■
■
V DSS
R DS(on )
I OUT
V CC
60 V
0.18 Ω
12 A
36 V
OUTPUT CURRENT (CONTINUOUS):
12A @ Tc=25oC
LOGIC LEVEL 5V COMPATIBLE INPUT
THERMAL SHUT-DOWN
UNDER VOLTAGE SHUT-DOWN
OPEN DRAIN DIAGNOSTIC OUTPUT
VERY LOW STAND-BY POWER
DISSIPATION
DESCRIPTION
The VN05H is a monolithic devices made using
SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The input control is 5V logic level compatible.
The open drain diagnostic output indicates open
circuit (no load) and over temperature status.
PENTAWATT
(vertical)
PENTAWATT
(horizontal)
PENTAWATT
(in-line)
ORDER CODES:
PENTAWATT vertical
VN05H
PENTAWATT horizontal
VN05H(011Y)
PENTAWATT in-line
VN05H(012Y)
BLOCK DIAGRAM
January 2002
1/10
VN05H
ABSOLUTE MAXIMUM RATING
Symb ol
Valu e
Un it
Drain-Source Breakdown Voltage
60
V
Output Current (cont.)
12
A
IR
Reverse O utput Current
-12
A
I IN
Input Current
±10
mA
V (BR)DSS
I OUT
Parameter
V CC
Supply Voltage (continuous)
40
V
V CC
Supply Voltage (pulsed)
60
V
-V CC
Reverse Supply Voltage
-4
V
I STAT
Status Current
±10
mA
Electrostatic Discharge (1.5 kΩ, 100 pF )
2000
V
V ESD
P tot
Tj
o
Power Dissipation at Tc ≤ 25 C
Junction Operating Temperature
T s tg
Storage T emperature
ESB
Power Mos Avalanche Energy
CONNECTION DIAGRAMS
CURRENT AND VOLTAGE CONVENTIONS
2/10
52
W
-40 to 150
o
C
-55 to 150
o
C
350
mJ
VN05H
THERMAL DATA
R t hj- case
R t hj- amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
2.4
62.5
o
C/W
C/W
o
ELECTRICAL CHARACTERISTICS (VCC = 9 to 36 V; -40 ≤ Tj ≤ 125 C unless otherwise specified)
POWER
Symb ol
Parameter
Test Con ditio ns
V CC
Supply Voltage
see note 1
R on
On St ate Resistance
I OUT = 6 A
I OUT = 6 A
IS
Supply Current
Min.
Typ.
5.5
13
T j = 25 oC
o
T j ≥ 25 C
Off State
On State
Max.
Un it
36
V
0.18
0.36
Ω
Ω
50
15
µA
mA
Max.
Un it
SWITCHING
Symb ol
Parameter
Test Con ditio ns
td (on)
Turn-on Delay Time Of
Output Current
I OUT = 6 A Resistive Load
Input Rise Time < 0.1 µs T j = 25 o C
15
µs
Rise T ime Of Output
Current
I OUT = 6 A Resistive Load
Input Rise Time < 0.1 µs T j = 25 o C
30
µs
Turn-off Delay Time O f I OUT = 6 A Resistive Load
Output Current
Input Rise Time < 0.1 µs T j = 25 o C
20
µs
Fall Time O f O utput
Current
I OUT = 6 A Resistive Load
Input Rise Time < 0.1 µs T j = 25 o C
10
µs
Turn-on Current Slope
I OUT = 6 A
I OUT = I OV
25 ≤ T j ≤ 140 o C
0.5
2
A/µs
A/µs
I OUT = 6 A
I OUT = I OV
25 ≤ T j ≤ 140 o C
2
4
A/µs
A/µs
I OUT = 6 A
L = 1 mH
tr
t d(of f)
tf
(di/dt) on
(di/dt) off
V demag
Turn-off Current Slope
Inductive Load Clamp
Voltage
Min.
Typ.
-7
-4
-2
V
Min.
Typ.
Max.
Un it
0.8
V
(*)
V
LOGIC INPUT
Symb ol
Parameter
V IL
Input Low Level
Voltage
VI H
Input High Level
Voltage
V I( hyst.)
Input Hysteresis
Voltage
I IN
V ICL
Test Con ditio ns
2
0.5
Input Current
VI N = 5 V
Input Clamp Voltage
I IN = 10 mA
I IN = -10 mA
V
50
6
-0.7
µA
V
V
3/10
VN05H
ELECTRICAL CHARACTERISTICS (Continued)
PROTECTION AND DIAGNOSTICS
Symb ol
V STAT (•)
V USD
V SCL (•)
Parameter
Status Voltage Output
Low
Test Con ditio ns
Min.
Typ.
I STAT = 1.6 mA
Under Voltage Shut
Down
Max.
Un it
0.4
v
5.5
V
6
-0.7
V
V
Status Clamp Voltage
I STAT = 10 mA
I STAT = -10 mA
I OV
Over Current
R LOAD < 10 mΩ
I AV
Average Current in
Short Circuit
I OL
Open Load Current
Level
5
T TSD
Termal Shut-Down
Temperature
140
o
C
TR
Reset T emperature
125
o
C
R LOAD < 10 mΩ
20
o
1.4
T c = 85 C
A
A
180
mA
(*) The VIH is internally clamped at 6V about. it is possible to connect thispin to an higher voltag e via an external resistor calculated to not
exceed 10 mA at the input pin.
( •) Status determinaion > 100 µs after the switching edge.
Note 1: Above VCC = 36V the output voltage is clamped to 36V. Power dissipation increases and the device turns off it junction temperature
reaches thermal shutdown temperature.
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open circuit (no load) and over
temperature conditions. The output signals are
processed by internal logic.
To protect the device against short circuit and
over-current condition the thermal protection turns
the integrated Power MOS off at a minimum
junction temperature of 140 oC. When the
temperature returns to about 125 oC the switch is
automatically turned on again. To ensur the
protection in all VCC conditions and in all the
junction temperature range it is necessary to limit
the voltage drop across Drain and Source (pin 3
and 5) at 29 V. The device is able to withstand a
load dump according the test pulse 5 at level III of
the ISO TR/1 7631.
Above VCC = 36V the output voltage is clamped
to 36V. Power dissipation increases and the
device turns off if junction temperature reaches
thermal shutdown temperature.
PROTECTING
THE
DEVICE
AGAINST
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
4/10
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
The consequences of the voltage drop across this
diode are as follows:
- If the input is pulled to power GND, a negative
voltage of -VF is seen by the device. (VIL, VIH
thresholds and VSTAT are increased by VF with
respect to power GND).
- The undervoltage shutdown level is increased
by VF.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit infig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of VIH, VIL and VSTAT takes
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.
VN05H
TRUTH TABLE
INPUT
O UTPUT
DIAGNO ST IC
Normal O peration
L
H
L
H
H
H
Open Circuit (No Load)
L
H
L
H
H
L
Over-temperature
L
H
L
L
H
L
Under-voltage
X
X
L
L
H
H
Figure 1: Waveforms
Figure 2: Over Current Test Circuit
5/10
VN05H
Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection
Figure 4: Typical Application Circuit With Separate Signal Ground
6/10
VN05H
PENTAWATT (VERTICAL) MECHANICAL DATA
DIM.
A
C
D
D1
E
F
G
G1
H1
H2
H3
L
L1
L2
L3
L5
L6
L7
M
M1
R
V4
Dia
MIN.
4.30
1.17
2.40
1.20
0.35
0.80
3.20
6.60
9.30
mm
TYP.
10.05
17.50
15.45
21.00
22.10
2.60
15.10
6.00
4.15
3.65
MAX.
4.80
1.37
2.80
1.35
0.55
1.05
3.60
7.00
9.70
10.40
10.40
18.20
16.05
21.80
22.90
3.00
15.80
6.60
4.85
4.36
MIN.
0.169
0.046
0.094
0.047
0.014
0.031
0.126
0.260
0.366
0.396
0.689
0.608
0.827
0.870
0.102
0.594
0.236
0.163
0.143
0.5
90o
3.65
inch
TYP.
MAX.
0.189
0.054
0.110
0.053
0.022
0.041
0.142
0.276
0.382
0.409
0.409
0.716
0.632
0.858
0.901
0.118
0.622
0.260
0.191
0.171
0.020
90o
3.85
0.144
0.152
P010L3F
7/10
VN05H
PENTAWATT (HORIZONTAL) MECHANICAL DATA
mm
DIM.
MIN
TYP
inch
MAX
MIN
TYP
MAX
A
4.30
4.80
0.169
0.189
C
1.17
1.37
0.046
0.054
D
2.40
2.80
0.094
0.110
E
0.35
0.55
0.014
0.021
F
0.80
1.05
0.031
0.041
G
3.20
3.60
0.126
0.142
G1
6.60
7.00
0.260
0.275
H1
9.30
9.70
0.366
0.382
H2
10.40
0.409
H3
10.05
10.40
0.396
0.409
L2
14.60
15.20
0.575
0.598
L3
3.50
4.10
0.137
0.161
L5
2.60
3.00
0.102
0.118
L6
15.10
15.80
0.594
0.622
L7
6.00
6.60
0.236
o
V4
Diam.
90
3.65
0.260
90
3.85
0.144
o
0.151
PO1OL1_E
8/10
VN05H
PENTAWATT (IN-LINE) MECHANICAL DATA
DIM.
A
C
D
E
F
F2
F3
G
G1
H1
H2
H3
L2
L3
L4
L5
L6
L7
V4
Diam.
MIN
4.30
1.17
2.40
0.35
0.80
1.10
1.25
3.20
6.60
9.30
mm
TYP
inch
TYP
MIN
0.169
0.046
0.094
0.014
0.031
0.043
0.049
0.126
0.260
0.366
10.05
MAX
4.80
1.37
2.80
0.55
1.05
1.40
1.55
3.60
7.00
9.70
10.40
10.40
0.396
MAX
0.189
0.054
0.110
0.021
0.041
0.055
0.061
0.142
0.275
0.382
0.409
0.409
23.05
25.30
0.90
2.60
15.10
6.00
23.80
26.10
2.90
3.00
15.80
6.60
0.907
0.996
0.035
0.102
0.594
0.236
0.937
1.027
0.114
0.118
0.622
0.260
90o
3.65
90
3.85
0.144
o
0.151
P010D
9/10
VN05H
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
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10/10
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