VN05N(011Y) скачать даташит

VN05N(011Y) скачать даташит
VN05N
HIGH SIDE SMART POWER SOLID STATE RELAY
TYPE
VN05N
■
■
■
■
■
■
V DSS
R DS( on)
I OUT
VC C
60 V
0.18 Ω
13 A
26 V
OUTPUT CURRENT (CONTINUOUS): 13A @
Tc=25 oC
5V LOGIC LEVEL COMPATIBLE INPUT
THERMAL SHUT-DOWN
UNDER VOLTAGE SHUT-DOWN
OPEN DRAIN DIAGNOSTIC OUTPUT
VERY LOW STAND-BY POWER
DISSIPATION
DESCRIPTION
The VN05N is a monolithic device made using
SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The input control is 5V logic level compatible.
The open drain diagnostic output indicates open
circuit (no load) and over temperature status.
PENTAWATT
(vertical)
PENTAWATT
(horizontal)
PENTAWATT
(in-line)
ORDER CODES:
PENTAWATT vertical
VN05N
PENTAWATT horizontal VN05N (011Y)
PENTAWATT in-line
VN05N (012Y)
BLOCK DIAGRAM
September 1994
1/11
VN05N
ABSOLUTE MAXIMUM RATING
Symbol
V( BR)DSS
Parameter
Drain-Source Breakdown Voltage
Unit
60
V
Output Current (cont.)
13
A
IR
Reverse Output Current
-13
A
II N
Input Current
±10
mA
-4
V
±10
mA
2000
V
IO UT
-V CC
Reverse Supply Voltage
ISTA T
Status Current
VE SD
Electrostatic Discharge (1.5 kΩ, 100 pF)
P tot
Tj
T stg
o
Power Dissipation at T c ≤ 25 C
Junction Operating Temperature
Storage Temperature
CONNECTION DIAGRAM
CURRENT AND VOLTAGE CONVENTIONS
2/11
Value
56
W
-40 to 150
o
C
-55 to 150
o
C
VN05N
THERMAL DATA
R thj-cas e
Rthj- amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
2.2
60
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (VCC = 13 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified)
POWER
Symbol
Parameter
VC C
Supply Voltage
R on
On State Resistance
IS
Supply Current
Test Conditions
Min.
Typ.
7
I OU T = 6 A
I OU T = 6 A
T j = 25 o C
T j ≥ 25 oC
Off State
On State
Max.
Unit
26
V
0.36
0.18
Ω
Ω
50
15
µA
mA
Max.
Unit
SWITCHING
Symbol
Parameter
Test Conditions
Min.
Typ.
Turn-on Delay Time Of I OU T = 6 A Resistive Load
Output Current
Input Rise Time < 0.1 µs T j = 25 o C
15
µs
Rise Time Of Output
Current
I OU T = 6 A Resistive Load
Input Rise Time < 0.1 µs T j = 25 o C
30
µs
Turn-off Delay Time Of I OU T = 6 A Resistive Load
Output Current
Input Rise Time < 0.1 µs T j = 25 o C
20
µs
Fall Time Of Output
Current
I OU T = 6 A Resistive Load
Input Rise Time < 0.1 µs T j = 25 o C
10
µs
(di/dt) on
Turn-on Current Slope
I OU T = 6 A
I OU T = I OV
0.5
2
A/µs
A/µs
(di/dt) off
Turn-off Current Slope
I OU T = 6 A
I OU T = I OV
2
4
A/µs
A/µs
Max.
Unit
0.8
V
(*)
V
t d(on)
tr
t d(off )
tf
LOGIC INPUT
Symbol
Parameter
V IL
Input Low Level
Voltage
V IH
Input High Level
Voltage
V I(hy st.)
Input Hysteresis
Voltage
II N
V ICL
Test Conditions
Min.
Typ.
2
0.5
Input Current
V IN = 5 V
250
Input Clamp Voltage
I IN = 10 mA
I IN = -10 mA
6
-0.7
V
500
µA
V
V
PROTECTIONS AND DIAGNOSTICS
Symbol
Parameter
V STAT (•) Status Voltage Output
Low
V US D
Under Voltage Shut
Down
Test Conditions
Min.
Typ.
I STAT = 1.6 mA
6.5
Max.
Unit
0.4
V
V
3/11
VN05N
ELECTRICAL CHARACTERISTICS (continued)
PROTECTION AND DIAGNOSTICS (continued)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
6
-0.7
Unit
V
V
V S CL (•)
Status Clamp Voltage
I STAT = 10 mA
I STAT = -10 mA
tS C
Switch-off Time in
Short Circuit Condition
at Start-Up
R LOA D < 10 mΩ
Tc = 25 o C
I OV
Over Current
R LOA D < 10 mΩ
-40 ≤ T c ≤ 125 o C
I AV
Average Current in
Short Circuit
R LOA D < 10 mΩ
Tc = 85 o C
I OL
Open Load Current
Level
5
TTS D
Thermal Shut-down
Temperature
140
o
C
TR
Reset Temperature
125
o
C
1.5
5
ms
60
A
1.4
A
180
mA
(*) The V IH is internally cl amped at 6V about. It is possibl e to connect this pin to an higher voltage via an external resi stor
cal culated to not exceed 10 mA at the i nput pin.
(•) Status determination > 100 µs after the switching edge.
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open circuit (no load) and over
temperature conditions. The output signals are
processed by internal logic.
To protect the device against short circuit and
over-current condition, the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140 oC. When the
temperature returns to about 125 oC the switch is
automatically turned on again.
In short circuit conditions the protection reacts
with virtually no delay, the sensor being located in
the region of the die where the heat is generated.
PROTECTING THE DEVICE AGAINST REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
4/11
The consequences of the voltage drop across
this diode are as follows:
– If the input is pulled to power GND, a negative
voltage of -VF is seen by the device. (VIL, VIH
thresholds and VSTAT are increased by VF with
respect to power GND).
– The undervoltage shutdown level is increased
by VF .
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of VIH, V IL and VSTAT takes
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.
VN05N
TRUTH TABLE
INPUT
OUTPUT
DIAGNOSTIC
Normal Operation
L
H
L
H
H
H
Open Circuit (No Load)
H
H
L
Over-temperature
H
L
L
Under-voltage
X
L
H
Figure 1: Waveforms
Figure 2: Over Current Test Circuit
5/11
VN05N
Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection
Figure 4: Typical Application Circuit With Separate Signal Ground
6/11
VN05N
RDS(on) vs Junction Temperature
RDS(on) vs Supply Voltage
RDS(on) vs Output Current
Input voltages vs Junction Temperature
Output Current Derating
Open Load vs Junction Temperature
7/11
VN05N
Pentawatt (vertical) MECHANICAL DATA
DIM.
mm
TYP.
MIN.
A
C
D
D1
E
F
F1
G
G1
H2
H3
L
L1
L2
L3
L5
L6
L7
M
M1
Dia
2.4
1.2
0.35
0.8
1
3.2
6.6
MAX.
4.8
1.37
2.8
1.35
0.55
1.05
1.4
3.6
7
10.4
10.4
3.4
6.8
10.05
MIN.
inch
TYP.
0.094
0.047
0.014
0.031
0.039
0.126
0.260
0.134
0.268
MAX.
0.189
0.054
0.110
0.053
0.022
0.041
0.055
0.142
0.276
0.409
0.409
0.396
17.85
15.75
21.4
22.5
0.703
0.620
0.843
0.886
2.6
15.1
6
3
15.8
6.6
0.102
0.594
0.236
0.118
0.622
0.260
4.5
4
0.177
0.157
3.65
3.85
0.144
0.152
E
L
D1
C
D
M
A
M1
L1
L2
G
G1
L3
H3
L5
F1
H2
L7
L6
8/11
F
Dia.
P010E
VN05N
Pentawatt (horizontal) MECHANICAL DATA
DIM.
mm
MIN.
TYP.
A
inch
MAX.
MIN.
TYP.
4.8
C
MAX.
0.189
1.37
0.054
D
2.4
2.8
0.094
0.110
D1
1.2
1.35
0.047
0.053
E
0.35
0.55
0.014
0.022
F
0.8
1.05
0.031
0.041
F1
1
1.4
0.039
G
3.2
3.4
3.6
0.126
0.134
0.142
G1
6.6
6.8
7
0.260
0.268
0.276
H2
10.4
0.055
0.409
H3
10.05
10.4
0.396
0.409
L
14.2
15
0.559
0.590
L1
5.7
6.2
0244
L2
14.6
15.2
0.598
L3
3.5
4.1
0.137
L5
2.6
3
0.102
0.118
L6
15.1
15.8
0.594
0.622
0.161
L7
6
6.6
0.236
0.260
Dia
3.65
3.85
0.144
0.152
P010F
9/11
VN05N
Pentawatt (In- Line) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.8
0.189
C
1.37
0.054
D
2.4
2.8
0.094
0.110
D1
1.2
1.35
0.047
0.053
E
0.35
0.55
0.014
0.022
F
0.8
1.05
0.031
0.041
F1
1
1.4
0.039
G
3.2
3.4
3.6
0.126
0.134
0.142
G1
6.6
6.8
7
0.260
0.268
0.276
H2
0.055
10.4
0.409
H3
10.05
10.4
0.396
L2
23.05
23.4
23.8
0.907
0.921
0.937
0.409
L3
25.3
25.65
26.1
0.996
1.010
1.028
L5
2.6
3
0.102
0.118
L6
15.1
15.8
0.594
0.622
L7
6
6.6
0.236
0.260
Dia
3.65
3.85
0.144
0.152
P010D
10/11
VN05N
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
11/11
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