16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose... SST39VF1601 / SST39VF3201 / SST39VF6401 SST39VF1602 / SST39VF3202 / SST39VF6402 FEATURES:

16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose... SST39VF1601 / SST39VF3201 / SST39VF6401 SST39VF1602 / SST39VF3202 / SST39VF6402 FEATURES:
16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories
Data Sheet
FEATURES:
• Organized as 1M x16: SST39VF1601/1602
2M x16: SST39VF3201/3202
4M x16: SST39VF6401/6402
• Single Voltage Read and Write Operations
– 2.7-3.6V
• Superior Reliability
– Endurance: 100,000 Cycles (Typical)
– Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz)
– Active Current: 9 mA (typical)
– Standby Current: 3 µA (typical)
– Auto Low Power Mode: 3 µA (typical)
• Hardware Block-Protection/WP# Input Pin
– Top Block-Protection (top 32 KWord)
for SST39VF1602/3202/6402
– Bottom Block-Protection (bottom 32 KWord)
for SST39VF1601/3201/6401
• Sector-Erase Capability
– Uniform 2 KWord sectors
• Block-Erase Capability
– Uniform 32 KWord blocks
• Chip-Erase Capability
• Erase-Suspend/Erase-Resume Capabilities
• Hardware Reset Pin (RST#)
• Security-ID Feature
– SST: 128 bits; User: 128 bits
• Fast Read Access Time:
– 70 ns
– 90 ns
• Latched Address and Data
• Fast Erase and Word-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 40 ms (typical)
– Word-Program Time: 7 µs (typical)
• Automatic Write Timing
– Internal VPP Generation
• End-of-Write Detection
– Toggle Bits
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (6mm x 8mm) for 16M and 32M
– 48-ball TFBGA (8mm x 10mm) for 64M
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST39VF160x/320x/640x devices are 1M x16, 2M
x16, and 4M x16 respectively, CMOS Multi-Purpose
Flash Plus (MPF+) manufactured with SST’s proprietary,
high performance CMOS SuperFlash technology. The
split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared
with alternate approaches. The SST39VF160x/320x/640x
write (Program or Erase) with a 2.7-3.6V power supply.
These devices conform to JEDEC standard pinouts for
x16 memories.
Featuring high performance Word-Program, the
SST39VF160x/320x/640x devices provide a typical WordProgram time of 7 µsec. These devices use Toggle Bit or
Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip
hardware and Software Data Protection schemes.
Designed, manufactured, and tested for a wide spectrum of
applications, these devices are offered with a guaranteed
typical endurance of 100,000 cycles. Data retention is rated
at greater than 100 years.
©2005 Silicon Storage Technology, Inc.
S71223-04-000
11/05
1
The SST39VF160x/320x/640x devices are suited for applications that require convenient and economical updating of
program, configuration, or data memory. For all system
applications, they significantly improve performance and
reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a
function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash
technology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase or
Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering
the cost for program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose
Erase and Program times increase with accumulated
Erase/Program cycles.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
first. The Program operation, once initiated, will be completed within 10 µs. See Figures 4 and 5 for WE# and CE#
controlled Program operation timing diagrams and Figure
19 for flowcharts. During the Program operation, the only
valid reads are Data# Polling and Toggle Bit. During the
internal Program operation, the host is free to perform additional tasks. Any commands issued during the internal Program operation are ignored. During the command
sequence, WP# should be statically held high or low.
To meet high density, surface mount requirements, the
SST39VF160x/320x/640x are offered in 48-lead TSOP
and 48-ball TFBGA packages. See Figures 1 and 2 for
pin assignments.
Device Operation
Commands are used to initiate the memory operation functions of the device. Commands are written to the device
using standard microprocessor write sequences. A command is written by asserting WE# low while keeping CE#
low. The address bus is latched on the falling edge of WE#
or CE#, whichever occurs last. The data bus is latched on
the rising edge of WE# or CE#, whichever occurs first.
Sector/Block-Erase Operation
The Sector- (or Block-) Erase operation allows the system
to erase the device on a sector-by-sector (or block-byblock) basis. The SST39VF160x/320x/640x offer both Sector-Erase and Block-Erase mode. The sector architecture
is based on uniform sector size of 2 KWord. The BlockErase mode is based on uniform block size of 32 KWord.
The Sector-Erase operation is initiated by executing a sixbyte command sequence with Sector-Erase command
(30H) and sector address (SA) in the last bus cycle. The
Block-Erase operation is initiated by executing a six-byte
command sequence with Block-Erase command (50H)
and block address (BA) in the last bus cycle. The sector or
block address is latched on the falling edge of the sixth
WE# pulse, while the command (30H or 50H) is latched on
the rising edge of the sixth WE# pulse. The internal Erase
operation begins after the sixth WE# pulse. The End-ofErase operation can be determined using either Data#
Polling or Toggle Bit methods. See Figures 9 and 10 for timing waveforms and Figure 23 for the flowchart. Any commands issued during the Sector- or Block-Erase operation
are ignored. When WP# is low, any attempt to Sector(Block-) Erase the protected block will be ignored. During
the command sequence, WP# should be statically held
high or low.
The SST39VF160x/320x/640x also have the Auto Low
Power mode which puts the device in a near standby
mode after data has been accessed with a valid Read
operation. This reduces the IDD active read current from
typically 9 mA to typically 3 µA. The Auto Low Power mode
reduces the typical IDD active read current to the range of 2
mA/MHz of Read cycle time. The device exits the Auto Low
Power mode with any address transition or control signal
transition used to initiate another Read cycle, with no
access time penalty. Note that the device does not enter
Auto-Low Power mode after power-up with CE# held
steadily low, until the first address transition or CE# is
driven high.
Read
The Read operation of the SST39VF160x/320x/640x is
controlled by CE# and OE#, both have to be low for the
system to obtain data from the outputs. CE# is used for
device selection. When CE# is high, the chip is deselected and only standby power is consumed. OE# is the
output control and is used to gate data from the output
pins. The data bus is in high impedance state when
either CE# or OE# is high. Refer to the Read cycle timing
diagram for further details (Figure 3).
Erase-Suspend/Erase-Resume Commands
The Erase-Suspend operation temporarily suspends a
Sector- or Block-Erase operation thus allowing data to be
read from any memory location, or program data into any
sector/block that is not suspended for an Erase operation.
The operation is executed by issuing one byte command
sequence with Erase-Suspend command (B0H). The
device automatically enters read mode typically within 20
µs after the Erase-Suspend command had been issued.
Valid data can be read from any sector or block that is not
suspended from an Erase operation. Reading at address
location within erase-suspended sectors/blocks will output
DQ2 toggling and DQ6 at “1”. While in Erase-Suspend
mode, a Word-Program operation is allowed except for the
sector or block selected for Erase-Suspend.
Word-Program Operation
The SST39VF160x/320x/640x are programmed on a
word-by-word basis. Before programming, the sector
where the word exists must be fully erased. The Program
operation is accomplished in three steps. The first step is
the three-byte load sequence for Software Data Protection.
The second step is to load word address and word data.
During the Word-Program operation, the addresses are
latched on the falling edge of either CE# or WE#, whichever occurs last. The data is latched on the rising edge of
either CE# or WE#, whichever occurs first. The third step is
the internal Program operation which is initiated after the
rising edge of the fourth WE# or CE#, whichever occurs
©2005 Silicon Storage Technology, Inc.
S71223-04-000
2
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
To resume Sector-Erase or Block-Erase operation which has
been suspended the system must issue Erase Resume
command. The operation is executed by issuing one byte
command sequence with Erase Resume command (30H)
at any address in the last Byte sequence.
ing the completion of an internal Write operation, the
remaining data outputs may still be invalid: valid data on the
entire data bus will appear in subsequent successive Read
cycles after an interval of 1 µs. During internal Erase operation, any attempt to read DQ7 will produce a ‘0’. Once the
internal Erase operation is completed, DQ7 will produce a
‘1’. The Data# Polling is valid after the rising edge of fourth
WE# (or CE#) pulse for Program operation. For Sector-,
Block- or Chip-Erase, the Data# Polling is valid after the
rising edge of sixth WE# (or CE#) pulse. See Figure 6 for
Data# Polling timing diagram and Figure 20 for a flowchart.
Chip-Erase Operation
The SST39VF160x/320x/640x provide a Chip-Erase operation, which allows the user to erase the entire memory
array to the “1” state. This is useful when the entire device
must be quickly erased.
Toggle Bits (DQ6 and DQ2)
The Chip-Erase operation is initiated by executing a sixbyte command sequence with Chip-Erase command
(10H) at address 5555H in the last byte sequence. The
Erase operation begins with the rising edge of the sixth
WE# or CE#, whichever occurs first. During the Erase
operation, the only valid read is Toggle Bit or Data# Polling.
See Table 6 for the command sequence, Figure 9 for timing diagram, and Figure 23 for the flowchart. Any commands issued during the Chip-Erase operation are
ignored. When WP# is low, any attempt to Chip-Erase will
be ignored. During the command sequence, WP# should
be statically held high or low.
During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce alternating “1”s
and “0”s, i.e., toggling between 1 and 0. When the internal
Program or Erase operation is completed, the DQ6 bit will
stop toggling. The device is then ready for the next operation. For Sector-, Block-, or Chip-Erase, the toggle bit (DQ6)
is valid after the rising edge of sixth WE# (or CE#) pulse.
DQ6 will be set to “1” if a Read operation is attempted on an
Erase-Suspended Sector/Block. If Program operation is initiated in a sector/block not selected in Erase-Suspend
mode, DQ6 will toggle.
An additional Toggle Bit is available on DQ2, which can be
used in conjunction with DQ6 to check whether a particular
sector is being actively erased or erase-suspended. Table 1
shows detailed status bits information. The Toggle Bit
(DQ2) is valid after the rising edge of the last WE# (or CE#)
pulse of Write operation. See Figure 7 for Toggle Bit timing
diagram and Figure 20 for a flowchart.
Write Operation Status Detection
The SST39VF160x/320x/640x provide two software
means to detect the completion of a Write (Program or
Erase) cycle, in order to optimize the system write cycle
time. The software detection includes two status bits: Data#
Polling (DQ7) and Toggle Bit (DQ6). The End-of-Write
detection mode is enabled after the rising edge of WE#,
which initiates the internal Program or Erase operation.
TABLE 1: WRITE OPERATION STATUS
The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the
completion of the write cycle. If this occurs, the system
may possibly get an erroneous result, i.e., valid data may
appear to conflict with either DQ7 or DQ6. In order to prevent spurious rejection, if an erroneous result occurs, the
software routine should include a loop to read the
accessed location an additional two (2) times. If both
reads are valid, then the device has completed the Write
cycle, otherwise the rejection is valid.
Status
DQ7
DQ6
DQ2
Normal
Standard
Operation Program
DQ7#
Toggle
No Toggle
Standard
Erase
0
Toggle
Toggle
Read from
Erase-Suspended
Sector/Block
1
1
Toggle
Read from
Non- Erase-Suspended
Sector/Block
Data
Data
Data
Program
DQ7#
Toggle
EraseSuspend
Mode
N/A
T1.0 1223
Note: DQ7 and DQ2 require a valid address when reading
status information.
Data# Polling (DQ7)
When the SST39VF160x/320x/640x are in the internal
Program operation, any attempt to read DQ7 will produce
the complement of the true data. Once the Program operation is completed, DQ7 will produce true data. Note that
even though DQ7 may have valid data immediately follow©2005 Silicon Storage Technology, Inc.
S71223-04-000
3
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
Data Protection
Hardware Reset (RST#)
The SST39VF160x/320x/640x provide both hardware and
software features to protect nonvolatile data from inadvertent
writes.
The RST# pin provides a hardware method of resetting the
device to read array data. When the RST# pin is held low
for at least TRP, any in-progress operation will terminate and
return to Read mode. When no internal Program/Erase
operation is in progress, a minimum period of TRHR is
required after RST# is driven high before a valid Read can
take place (see Figure 15).
Hardware Data Protection
Noise/Glitch Protection: A WE# or CE# pulse of less than 5
ns will not initiate a write cycle.
VDD Power Up/Down Detection: The Write operation is
inhibited when VDD is less than 1.5V.
The Erase or Program operation that has been interrupted
needs to be reinitiated after the device resumes normal
operation mode to ensure data integrity.
Write Inhibit Mode: Forcing OE# low, CE# high, or WE#
high will inhibit the Write operation. This prevents inadvertent writes during power-up or power-down.
Software Data Protection (SDP)
The SST39VF160x/320x/640x provide the JEDEC
approved Software Data Protection scheme for all data
alteration operations, i.e., Program and Erase. Any Program operation requires the inclusion of the three-byte
sequence. The three-byte load sequence is used to initiate
the Program operation, providing optimal protection from
inadvertent Write operations, e.g., during the system
power-up or power-down. Any Erase operation requires the
inclusion of six-byte sequence. These devices are shipped
with the Software Data Protection permanently enabled.
See Table 6 for the specific software command codes. During SDP command sequence, invalid commands will abort
the device to read mode within TRC. The contents of DQ15DQ8 can be VIL or VIH, but no other value, during any SDP
command sequence.
Hardware Block Protection
The SST39VF1602/3202/6402 support top hardware block
protection, which protects the top 32 KWord block of the
device. The SST39VF1601/3201/6401 support bottom
hardware block protection, which protects the bottom 32
KWord block of the device. The Boot Block address ranges
are described in Table 2. Program and Erase operations
are prevented on the 32 KWord when WP# is low. If WP# is
left floating, it is internally held high via a pull-up resistor,
and the Boot Block is unprotected, enabling Program and
Erase operations on that block.
TABLE 2: BOOT BLOCK ADDRESS RANGES
Product
Address Range
Common Flash Memory Interface (CFI)
Bottom Boot Block
SST39VF1601/3201/6401
The SST39VF160x/320x/640x also contain the CFI information to describe the characteristics of the device. In
order to enter the CFI Query mode, the system must write
three-byte sequence, same as product ID entry command
with 98H (CFI Query command) to address 5555H in the
last byte sequence. Once the device enters the CFI Query
mode, the system can read CFI data at the addresses
given in Tables 7 through 10. The system must write the
CFI Exit command to return to Read mode from the CFI
Query mode.
000000H-007FFFH
Top Boot Block
SST39VF1602
0F8000H-0FFFFFH
SST39VF3202
1F8000H-1FFFFFH
SST39VF6402
3F8000H-3FFFFFH
T2.0 1223
©2005 Silicon Storage Technology, Inc.
S71223-04-000
4
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
Product Identification
Security ID
The Product Identification mode identifies the devices as
the SST39VF1601, SST39VF1602, SST39VF3201,
SST39VF3202, SST39VF6401, SST39VF6402, and
manufacturer as SST. This mode may be accessed software operations. Users may use the Software Product
Identification operation to identify the part (i.e., using the
device ID) when using multiple manufacturers in the same
socket. For details, see Table 6 for software operation,
Figure 11 for the Software ID Entry and Read timing diagram and Figure 21 for the Software ID Entry command
sequence flowchart.
The SST39VF160x/320x/640x devices offer a 256-bit
Security ID space. The Secure ID space is divided into two
128-bit segments - one factory programmed segment and
one user programmed segment. The first segment is programmed and locked at SST with a random 128-bit number. The user segment is left un-programmed for the
customer to program as desired.
To program the user segment of the Security ID, the user
must use the Security ID Word-Program command. To
detect end-of-write for the SEC ID, read the toggle bits. Do
not use Data# Polling. Once this is complete, the Sec ID
should be locked using the User Sec ID Program Lock-Out.
This disables any future corruption of this space. Note that
regardless of whether or not the Sec ID is locked, neither
Sec ID segment can be erased.
TABLE 3: PRODUCT IDENTIFICATION
Address
Data
0000H
BFH
SST39VF1601
0001H
234BH
SST39VF1602
0001H
234AH
SST39VF3201
0001H
235BH
SST39VF3202
0001H
235AH
SST39VF6401
0001H
236BH
SST39VF6402
0001H
236AH
Manufacturer’s ID
Device ID
The Secure ID space can be queried by executing a threebyte command sequence with Enter Sec ID command
(88H) at address 5555H in the last byte sequence. To exit
this mode, the Exit Sec ID command should be executed.
Refer to Table 6 for more details.
T3.2 1223
Product Identification Mode Exit/
CFI Mode Exit
In order to return to the standard Read mode, the Software
Product Identification mode must be exited. Exit is accomplished by issuing the Software ID Exit command
sequence, which returns the device to the Read mode.
This command may also be used to reset the device to the
Read mode after any inadvertent transient condition that
apparently causes the device to behave abnormally, e.g.,
not read correctly. Please note that the Software ID Exit/
CFI Exit command is ignored during an internal Program or
Erase operation. See Table 6 for software command
codes, Figure 13 for timing waveform, and Figures 21 and
22 for flowcharts.
©2005 Silicon Storage Technology, Inc.
S71223-04-000
5
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
FUNCTIONAL BLOCK DIAGRAM
SuperFlash
Memory
X-Decoder
Memory Address
Address Buffer & Latches
Y-Decoder
CE#
OE#
WE#
WP#
RESET#
I/O Buffers and Data Latches
Control Logic
DQ15 - DQ0
1223 B1.0
SST39VF6401/6402 SST39VF3201/3202
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RST#
A21
WP#
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RST#
NC
WP#
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
SST39VF160x/320x/640x
SST39VF1601/1602
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE#
RST#
NC
WP#
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Standard Pinout
Top View
Die Up
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
NC
VSS
DQ15
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VDD
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
1223 48-tsop P01.3
FIGURE 1: PIN ASSIGNMENTS FOR 48-LEAD TSOP
©2005 Silicon Storage Technology, Inc.
S71223-04-000
6
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
TOP VIEW (balls facing down)
TOP VIEW (balls facing down)
SST39VF1601/1602
4
3
2
1
A9
A8
WE# RST#
A10
NC
NC WP# A18
A7
A17
A6
6
A15 A16 NC DQ15 VSS
5
A11 DQ7 DQ14 DQ13 DQ6
4
A19 DQ5 DQ12 VDD DQ4
NC DQ2 DQ10 DQ11 DQ3
A5
DQ0 DQ8 DQ9 DQ1
A3
A4
A2
A1
A0 CE# OE# VSS
A
B
C
D
E
F
G
A13 A12 A14
A15 A16 NC DQ15 VSS
A9
A8
A10
A11 DQ7 DQ14 DQ13 DQ6
WE# RST#
NC
A19 DQ5 DQ12 VDD DQ4
3
2
1
H
NC WP# A18 A20 DQ2 DQ10 DQ11 DQ3
A7
A17
A6
A5
DQ0 DQ8 DQ9 DQ1
A3
A4
A2
A1
A0 CE# OE# VSS
A
B
C
D
E
F
G
1223 48-tfbga B3K P02a.2
5
A13 A12 A14
1223 48-tfbga B3K P02.0
6
SST39VF3201/3202
H
TOP VIEW (balls facing down)
SST39VF6401/6402
5
4
3
2
1
A13 A12 A14
A15 A16 NC DQ15 VSS
A9
A10
A11 DQ7 DQ14 DQ13 DQ6
WE# RST# A21
A19 DQ5 DQ12 VDD DQ4
A8
NC WP# A18 A20 DQ2 DQ10 DQ11 DQ3
A7
A17
A6
A5
DQ0 DQ8 DQ9 DQ1
A3
A4
A2
A1
A0 CE# OE# VSS
A B C D E F G H
1223 4-tfbga B1K P02b.2
6
FIGURE 2: PIN ASSIGNMENTS FOR 48-BALL TFBGA
©2005 Silicon Storage Technology, Inc.
S71223-04-000
7
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
TABLE 4: PIN DESCRIPTION
Symbol
Pin Name
Functions
AMS1-A0
Address Inputs
To provide memory addresses.
During Sector-Erase AMS-A11 address lines will select the sector.
During Block-Erase AMS-A15 address lines will select the block.
DQ15-DQ0
Data Input/output
To output data during Read cycles and receive input data during Write cycles.
Data is internally latched during a Write cycle.
The outputs are in tri-state when OE# or CE# is high.
WP#
Write Protect
To protect the top/bottom boot block from Erase/Program operation when grounded.
RST#
Reset
To reset and return the device to Read mode.
CE#
Chip Enable
To activate the device when CE# is low.
OE#
Output Enable
To gate the data output buffers.
WE#
Write Enable
To control the Write operations.
To provide power supply voltage: 2.7-3.6V
VDD
Power Supply
VSS
Ground
NC
No Connection
Unconnected pins.
T4.2 1223
1. AMS = Most significant address
AMS = A19 for SST39VF1601/1602, A20 for SST39VF3201/3202, and A21 for SST39VF6401/6402
TABLE 5: OPERATION MODES SELECTION
Mode
CE#
OE#
WE#
Read
Program
DQ
Address
VIL
VIL
VIL
VIH
VIH
DOUT
AIN
VIL
DIN
AIN
VIH
VIL
X1
Sector or block address,
XXH for Chip-Erase
Erase
VIL
Standby
VIH
X
X
High Z
X
X
VIL
X
High Z/ DOUT
X
X
X
VIH
High Z/ DOUT
X
VIL
VIL
VIH
Write Inhibit
Product Identification
Software Mode
See Table 6
T5.0 1223
1. X can be VIL or VIH, but no other value.
©2005 Silicon Storage Technology, Inc.
S71223-04-000
8
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
TABLE 6: SOFTWARE COMMAND SEQUENCE
Command
Sequence
1st Bus
Write Cycle
Addr1
Data2
2nd Bus
Write Cycle
Addr1
Data2
3rd Bus
Write Cycle
Addr1
4th Bus
Write Cycle
Data2
Addr1
Data2
Data
AAH
Word-Program
5555H
AAH
2AAAH
55H
5555H
A0H
WA3
Sector-Erase
5555H
AAH
2AAAH
55H
5555H
80H
5555H
5th Bus
Write Cycle
6th Bus
Write Cycle
Addr1
Data2
Addr1
Data2
2AAAH
55H
SAX4
30H
4
Block-Erase
5555H
AAH
2AAAH
55H
5555H
80H
5555H
AAH
2AAAH
55H
BAX
Chip-Erase
5555H
AAH
2AAAH
55H
5555H
80H
5555H
AAH
2AAAH
55H
5555H
Erase-Suspend
XXXXH
B0H
Erase-Resume
XXXXH
30H
ID5
5555H
AAH
2AAAH
55H
5555H
88H
User Security ID
Word-Program
5555H
AAH
2AAAH
55H
5555H
A5H
WA6
Data
User Security ID
Program Lock-Out
5555H
AAH
2AAAH
55H
5555H
85H
XXH6
0000H
Software ID Entry7,8
5555H
AAH
2AAAH
55H
5555H
90H
CFI Query Entry
5555H
AAH
2AAAH
55H
5555H
98H
Software ID Exit9,10
/CFI Exit/Sec ID Exit
5555H
AAH
2AAAH
55H
5555H
F0H
Software ID Exit9,10
/CFI Exit/Sec ID Exit
XXH
F0H
Query Sec
50H
10H
T6.6 1223
1. Address format A14-A0 (Hex).
Addresses A15-A19 can be VIL or VIH, but no other value, for Command sequence for SST39VF1601/1602,
Addresses A15-A20 can be VIL or VIH, but no other value, for Command sequence for SST39VF3201/3202,
Addresses A15- A21 can be VIL or VIH, but no other value, for Command sequence for SST39VF6401/6402.
2. DQ15-DQ8 can be VIL or VIH, but no other value, for Command sequence
3. WA = Program Word address
4. SAX for Sector-Erase; uses AMS-A11 address lines
BAX, for Block-Erase; uses AMS-A15 address lines
AMS = Most significant address
AMS = A19 for SST39VF1601/1602, A20 for SST39VF3201/3202, and A21 for SST39VF6401/6402
5. With AMS-A4 = 0; Sec ID is read with A3-A0,
SST ID is read with A3 = 0 (Address range = 000000H to 000007H),
User ID is read with A3 = 1 (Address range = 000010H to 000017H).
Lock Status is read with A7-A0 = 0000FFH. Unlocked: DQ3 = 1 / Locked: DQ3 = 0.
6. Valid Word-Addresses for Sec ID are from 000000H-000007H and 000010H-000017H.
7. The device does not remain in Software Product ID Mode if powered down.
8. With AMS-A1 =0; SST Manufacturer ID = 00BFH, is read with A0 = 0,
SST39VF1601 Device ID = 234BH, is read with A0 = 1,
SST39VF1602 Device ID = 234AH, is read with A0 = 1,
SST39VF3201 Device ID = 235BH, is read with A0 = 1,
SST39VF3202 Device ID = 235AH, is read with A0 = 1,
SST39VF6401 Device ID = 236BH, is read with A0 = 1,
SST39VF6402 Device ID = 236AH, is read with A0 = 1.
AMS = Most significant address
AMS = A19 for SST39VF1601/1602, A20 for SST39VF3201/3202, and A21 for SST39VF6401/6402
9. Both Software ID Exit operations are equivalent
10. If users never lock after programming, Sec ID can be programmed over the previously unprogrammed bits (data=1) using the Sec ID
mode again (the programmed “0” bits cannot be reversed to “1”). Valid Word-Addresses for Sec ID are from 000000H-000007H and
000010H-000017H.
©2005 Silicon Storage Technology, Inc.
S71223-04-000
9
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
TABLE 7: CFI QUERY IDENTIFICATION STRING1 FOR SST39VF160X/320X/640X
Address
10H
11H
12H
13H
14H
15H
16H
17H
18H
19H
1AH
Data
0051H
0052H
0059H
0001H
0007H
0000H
0000H
0000H
0000H
0000H
0000H
Data
Query Unique ASCII string “QRY”
Primary OEM command set
Address for Primary Extended Table
Alternate OEM command set (00H = none exists)
Address for Alternate OEM extended Table (00H = none exits)
T7.1 1223
1. Refer to CFI publication 100 for more details.
TABLE 8: SYSTEM INTERFACE INFORMATION FOR SST39VF160X/320X/640X
Address
Data
1BH
0027H
VDD Min (Program/Erase)
Data
1CH
0036H
VDD Max (Program/Erase)
DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts
1DH
0000H
VPP min. (00H = no VPP pin)
1EH
0000H
VPP max. (00H = no VPP pin)
1FH
0003H
Typical time out for Word-Program 2N µs (23 = 8 µs)
20H
0000H
Typical time out for min. size buffer program 2N µs (00H = not supported)
21H
0004H
Typical time out for individual Sector/Block-Erase 2N ms (24 = 16 ms)
22H
0005H
Typical time out for Chip-Erase 2N ms (25 = 32 ms)
23H
0001H
Maximum time out for Word-Program 2N times typical (21 x 23 = 16 µs)
24H
0000H
Maximum time out for buffer program 2N times typical
25H
0001H
Maximum time out for individual Sector/Block-Erase 2N times typical (21 x 24 = 32 ms)
26H
0001H
Maximum time out for Chip-Erase 2N times typical (21 x 25 = 64 ms)
DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts
T8.3 1223
TABLE 9: DEVICE GEOMETRY INFORMATION FOR SST39VF1601/1602
Address
27H
28H
29H
2AH
2BH
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
Data
0015H
0001H
0000H
0000H
0000H
0002H
00FFH
0001H
0010H
0000H
001FH
0000H
0000H
0001H
Data
Device size = 2N Bytes (15H = 21; 221 = 2 MByte)
Flash Device Interface description; 0001H = x16-only asynchronous interface
Maximum number of byte in multi-byte write = 2N (00H = not supported)
Number of Erase Sector/Block sizes supported by device
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
y = 511 + 1 = 512 sectors (01FF = 511
z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16)
Block Information (y + 1 = Number of blocks; z x 256B = block size)
y = 31 + 1 = 32 blocks (001F = 31)
z = 256 x 256 Bytes = 64 KByte/block (0100H = 256)
T9.0 1223
©2005 Silicon Storage Technology, Inc.
S71223-04-000
10
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
TABLE 10: DEVICE GEOMETRY INFORMATION FOR SST39VF3201/3202
Address
27H
28H
29H
2AH
2BH
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
Data
0016H
0001H
0000H
0000H
0000H
0002H
00FFH
0003H
0010H
0000H
003FH
0000H
0000H
0001H
Data
Device size = 2N Bytes (16H = 22; 222 = 4 MByte)
Flash Device Interface description; 0001H = x16-only asynchronous interface
Maximum number of byte in multi-byte write = 2N (00H = not supported)
Number of Erase Sector/Block sizes supported by device
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
y = 1023 + 1 = 1024 (03FFH = 1023)
z = 16 x 256 Bytes = 4 KBytes/sector (0010H = 16)
Block Information (y + 1 = Number of blocks; z x 256B = block size)
y = 63 + 1 = 64 blocks (003FH = 63)
z = 256 x 256 Bytes = 64 KBytes/block (0100H = 256)
T10.2 1223
TABLE 11: DEVICE GEOMETRY INFORMATION FOR SST39VF6401/6402
Address
27H
28H
29H
2AH
2BH
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
Data
0017H
0001H
0000H
0000H
0000H
0002H
00FFH
0007H
0010H
0000H
007FH
0000H
0000H
0001H
Data
Device size = 2N Bytes (17H = 23; 223 = 8 MByte)
Flash Device Interface description; 0001H = x16-only asynchronous interface
Maximum number of bytes in multi-byte write = 2N (00H = not supported)
Number of Erase Sector/Block sizes supported by device
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
y = 2047 + 1 = 2048 sectors (07FFH = 2047)
z = 16 x 256 Bytes = 4 KBytes/sector (0010H = 16)
Block Information (y + 1 = Number of blocks; z x 256B = block size)
y =127 + 1 = 128 blocks (007FH = 127)
z = 256 x 256 Bytes = 64 KBytes/block (0100H = 256)
T11.2 1223
©2005 Silicon Storage Technology, Inc.
S71223-04-000
11
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
Voltage on A9 Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 13.2V
Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Solder Reflow Temperature1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Excluding certain with-Pb 32-PLCC units, all packages are 260°C capable in both non-Pb and with-Pb solder versions.
Certain with-Pb 32-PLCC package types are capable of 240°C for 10 seconds; please consult the factory for the latest information.
2. Outputs shorted for no more than one second. No more than one output shorted at a time.
OPERATING RANGE
Range
Ambient Temp
VDD
Commercial
Industrial
0°C to +70°C
-40°C to +85°C
2.7-3.6V
2.7-3.6V
AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . CL = 30 pF
See Figures 17 and 18
©2005 Silicon Storage Technology, Inc.
S71223-04-000
12
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
TABLE 12: DC OPERATING CHARACTERISTICS VDD = 2.7-3.6V1
Limits
Symbol
Parameter
IDD
Power Supply Current
Min
Max
Units
Test Conditions
Address input=VILT/VIHT2, at f=5 MHz,
VDD=VDD Max
Read3
18
mA
CE#=VIL, OE#=WE#=VIH, all I/Os open
Program and Erase
35
mA
CE#=WE#=VIL, OE#=VIH
ISB
Standby VDD Current
20
µA
CE#=VIHC, VDD=VDD Max
IALP
Auto Low Power
20
µA
CE#=VILC, VDD=VDD Max
All inputs=VSS or VDD, WE#=VIHC
ILI
Input Leakage Current
1
µA
VIN=GND to VDD, VDD=VDD Max
ILIW
Input Leakage Current
on WP# pin and RST#
10
µA
WP#=GND to VDD or RST#=GND to VDD
ILO
Output Leakage Current
10
µA
VOUT=GND to VDD, VDD=VDD Max
VIL
Input Low Voltage
0.8
V
VDD=VDD Min
VILC
Input Low Voltage (CMOS)
0.3
V
VDD=VDD Max
VIH
Input High Voltage
0.7VDD
V
VDD=VDD Max
VIHC
Input High Voltage (CMOS)
VDD-0.3
V
VDD=VDD Max
VOL
Output Low Voltage
VOH
Output High Voltage
0.2
VDD-0.2
V
IOL=100 µA, VDD=VDD Min
V
IOH=-100 µA, VDD=VDD Min
T12.8 1223
1. Typical conditions for the Active Current shown on the front page of the data sheet are average values at 25°C
(room temperature), and VDD = 3V. Not 100% tested.
2. See Figure 17
3. The IDD current listed is typically less than 2mA/MHz, with OE# at VIH. Typical VDD is 3V.
TABLE 13: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
Parameter
Minimum
Units
TPU-READ1
Power-up to Read Operation
100
µs
Power-up to Program/Erase Operation
100
µs
TPU-WRITE
1
T13.0 1223
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 14: CAPACITANCE (TA = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
CI/O1
I/O Pin Capacitance
VI/O = 0V
12 pF
Input Capacitance
VIN = 0V
6 pF
CIN
1
T14.0 1223
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 15: RELIABILITY CHARACTERISTICS
Symbol
NEND
1,2
Parameter
Minimum Specification
Units
Endurance
10,000
Cycles
JEDEC Standard A117
100
Years
JEDEC Standard A103
100 + IDD
mA
JEDEC Standard 78
TDR1
Data Retention
ILTH1
Latch Up
Test Method
T15.2 1223
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. NEND endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a
higher minimum specification.
©2005 Silicon Storage Technology, Inc.
S71223-04-000
13
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
AC CHARACTERISTICS
TABLE 16: READ CYCLE TIMING PARAMETERS VDD = 2.7-3.6V
SST39VFxx01/xx02-70
Symbol
Parameter
Min
70
Max
SST39VFxx01/xx02-90
Min
Max
Units
TRC
Read Cycle Time
TCE
Chip Enable Access Time
TAA
Address Access Time
70
90
ns
TOE
Output Enable Access Time
35
45
ns
TCLZ1
CE# Low to Active Output
0
0
ns
TOLZ1
OE# Low to Active Output
0
0
ns
90
70
ns
90
ns
1
CE# High to High-Z Output
20
30
ns
TOHZ1
OE# High to High-Z Output
20
30
ns
TOH1
Output Hold from Address Change
0
0
ns
TRP1
RST# Pulse Width
500
500
ns
RST# High before Read
50
TCHZ
TRHR
1
TRY1,2
RST# Pin Low to Read Mode
50
20
ns
20
µs
T16.3 1223
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. This parameter applies to Sector-Erase, Block-Erase and Program operations.
This parameter does not apply to Chip-Erase operations.
TABLE 17: PROGRAM/ERASE CYCLE TIMING PARAMETERS
Symbol
Parameter
TBP
Word-Program Time
Min
Max
Units
10
µs
TAS
Address Setup Time
0
ns
TAH
Address Hold Time
30
ns
TCS
WE# and CE# Setup Time
0
ns
TCH
WE# and CE# Hold Time
0
ns
TOES
OE# High Setup Time
0
ns
TOEH
OE# High Hold Time
10
ns
TCP
CE# Pulse Width
40
ns
TWP
WE# Pulse Width
40
ns
TWPH1
WE# Pulse Width High
30
ns
TCPH1
CE# Pulse Width High
30
ns
TDS
Data Setup Time
30
ns
TDH1
Data Hold Time
0
ns
TIDA1
Software ID Access and Exit Time
150
ns
TSE
Sector-Erase
25
ms
TBE
Block-Erase
25
ms
TSCE
Chip-Erase
50
ms
T17.1 1223
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2005 Silicon Storage Technology, Inc.
S71223-04-000
14
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
TAA
TRC
ADDRESS AMS-0
TCE
CE#
TOE
OE#
TOHZ
TOLZ
VIH
WE#
TCLZ
HIGH-Z
DQ15-0
TCHZ
TOH
HIGH-Z
DATA VALID
DATA VALID
1223 F03.2
Note:
AMS = Most significant address
AMS = A19 for SST39VF1601/1602, A20 for SST39VF3201/3202, and A21 for SST39VF6401/6402
FIGURE 3: READ CYCLE TIMING DIAGRAM
INTERNAL PROGRAM OPERATION STARTS
TBP
5555
TAH
ADDRESS AMS-0
2AAA
5555
ADDR
TDH
TWP
WE#
TAS
TDS
TWPH
OE#
TCH
CE#
TCS
DQ15-0
Note:
XXAA
XX55
XXA0
SW0
SW1
SW2
DATA
WORD
(ADDR/DATA)
1223 F04.3
AMS = Most significant address
AMS = A19 for SST39VF1601/1602, A20 for SST39VF3201/3202, and A21 for SST39VF6401/6402
WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence
X can be VIL or VIH, but no other value
FIGURE 4: WE# CONTROLLED PROGRAM CYCLE TIMING DIAGRAM
©2005 Silicon Storage Technology, Inc.
S71223-04-000
15
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
INTERNAL PROGRAM OPERATION STARTS
TBP
5555
TAH
ADDRESS AMS-0
2AAA
5555
ADDR
TDH
TCP
CE#
TAS
TDS
TCPH
OE#
TCH
WE#
TCS
DQ15-0
Note:
XXAA
XX55
XXA0
DATA
SW0
SW1
SW2
WORD
(ADDR/DATA)
1223 F05.3
AMS = Most significant address
AMS = A19 for SST39VF1601/1602, A20 for SST39VF3201/3202, and A21 for SST39VF6401/6402
WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence
X can be VIL or VIH, but no other value
FIGURE 5: CE# CONTROLLED PROGRAM CYCLE TIMING DIAGRAM
ADDRESS AMS-0
TCE
CE#
TOES
TOEH
OE#
TOE
WE#
DQ7
DATA
DATA#
DATA#
DATA
1223 F06.2
Note:
AMS = Most significant address
AMS = A19 for SST39VF1601/1602, A20 for SST39VF3201/3202, and A21 for SST39VF6401/6402
FIGURE 6: DATA# POLLING TIMING DIAGRAM
©2005 Silicon Storage Technology, Inc.
S71223-04-000
16
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
ADDRESS AMS-0
TCE
CE#
TOES
TOE
TOEH
OE#
WE#
DQ6 and DQ2
TWO READ CYCLES
WITH SAME OUTPUTS
Note:
1223 F07.3
AMS = Most significant address
AMS = A19 for SST39VF1601/1602, A20 for SST39VF3201/3202, and A21 for SST39VF6401/6402
FIGURE 7: TOGGLE BITS TIMING DIAGRAM
TSCE
SIX-BYTE CODE FOR CHIP-ERASE
5555
ADDRESS AMS-0
2AAA
5555
5555
2AAA
5555
CE#
OE#
TWP
WE#
DQ15-0
XXAA
XX55
XX80
XXAA
XX55
XX10
SW0
SW1
SW2
SW3
SW4
SW5
1223 F08.4
Note:
This device also supports CE# controlled Chip-Erase operation. The WE# and CE# signals are
interchageable as long as minimum timings are met. (See Table 17)
AMS = Most significant address
AMS = A19 for SST39VF1601/1602, A20 for SST39VF3201/3202, and A21 for SST39VF6401/6402
WP# must be held in proper logic state (VIH) 1 µs prior to and 1 µs after the command sequence
X can be VIL or VIH, but no other value
FIGURE 8: WE# CONTROLLED CHIP-ERASE TIMING DIAGRAM
©2005 Silicon Storage Technology, Inc.
S71223-04-000
17
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
TBE
SIX-BYTE CODE FOR BLOCK-ERASE
5555
ADDRESS AMS-0
2AAA
5555
5555
2AAA
BAX
CE#
OE#
TWP
WE#
DQ15-0
XXAA
XX55
XX80
XXAA
XX55
XX50
SW0
SW1
SW2
SW3
SW4
SW5
1223 F09.4
Note: This device also supports CE# controlled Block-Erase operation. The WE# and CE# signals are
interchageable as long as minimum timings are met. (See Table 17)
BAX = Block Address
AMS = Most significant address
AMS = A19 for SST39VF1601/1602, A20 for SST39VF3201/3202, and A21 for SST39VF6401/6402
WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence
X can be VIL or VIH, but no other value
FIGURE 9: WE# CONTROLLED BLOCK-ERASE TIMING DIAGRAM
TSE
SIX-BYTE CODE FOR SECTOR-ERASE
5555
ADDRESS AMS-0
2AAA
5555
5555
2AAA
SAX
CE#
OE#
TWP
WE#
DQ15-0
XXAA
XX55
XX80
XXAA
XX55
XX30
SW0
SW1
SW2
SW3
SW4
SW5
1223 F10.4
Note: This device also supports CE# controlled Sector-Erase operation. The WE# and CE# signals are
interchageable as long as minimum timings are met. (See Table 17)
SAX = Sector Address
AMS = Most significant address
AMS = A19 for SST39VF1601/1602, A20 for SST39VF3201/3202, and A21 for SST39VF6401/6402
WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence
X can be VIL or VIH, but no other value
FIGURE 10: WE# CONTROLLED SECTOR-ERASE TIMING DIAGRAM
©2005 Silicon Storage Technology, Inc.
S71223-04-000
18
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
Three-Byte Sequence for Software ID Entry
5555
ADDRESS A14-0
2AAA
5555
0000
0001
CE#
OE#
TIDA
TWP
WE#
TWPH
DQ15-0
XXAA
SW0
Note:
TAA
XX55
00BF
XX90
SW1
Device ID
1223 F11.2
SW2
Device ID = 234BH for 39VF1601, 234AH for 39VF1602, 235BH for 39VF3201, 235AH for 39VF3202,
236BH for 39VF6401, and 236AH for 39VF6402,
WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence
X can be VIL or VIH, but no other value
FIGURE 11: SOFTWARE ID ENTRY AND READ
Three-Byte Sequence for CFI Query Entry
5555
ADDRESS A14-0
2AAA
5555
CE#
OE#
TIDA
TWP
WE#
TWPH
DQ15-0
TAA
XXAA
XX55
XX98
SW0
SW1
SW2
1223 F12.1
Note:
WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence
X can be VIL or VIH, but no other value
FIGURE 12: CFI QUERY ENTRY AND READ
©2005 Silicon Storage Technology, Inc.
S71223-04-000
19
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
THREE-BYTE SEQUENCE FOR
SOFTWARE ID EXIT AND RESET
5555
ADDRESS A14-0
DQ15-0
2AAA
XXAA
5555
XX55
XXF0
TIDA
CE#
OE#
TWP
WE#
T WHP
SW0
Note:
SW1
SW2
1223 F13.0
WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence
X can be VIL or VIH, but no other value
FIGURE 13: SOFTWARE ID EXIT/CFI EXIT
THREE-BYTE SEQUENCE FOR
CFI QUERY ENTRY
5555
ADDRESS AMS-0
2AAA
5555
CE#
OE#
TIDA
TWP
WE#
TWPH
DQ15-0
TAA
XXAA
XX55
XX88
SW0
SW1
SW2
1223 F20.1
Note: AMS = Most significant address
AMS = A19 for SST39VF1601/1602, A20 for SST39VF3201/3202, and A21 for SST39VF6401/6402
WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence
X can be VIL or VIH, but no other value.
FIGURE 14: SEC ID ENTRY
©2005 Silicon Storage Technology, Inc.
S71223-04-000
20
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
TRP
RST#
TRHR
CE#/OE#
1223 F22.1
FIGURE 15: RST# TIMING DIAGRAM (WHEN NO INTERNAL OPERATION IS IN PROGRESS)
TRP
RST#
TRY
CE#/OE#
End-of-Write Detection
(Toggle-Bit)
1223 F23.0
FIGURE 16: RST# TIMING DIAGRAM (DURING PROGRAM OR ERASE OPERATION)
©2005 Silicon Storage Technology, Inc.
S71223-04-000
21
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
VIHT
INPUT
VIT
REFERENCE POINTS
VOT
OUTPUT
VILT
1223 F14.0
AC test inputs are driven at VIHT (0.9 VDD) for a logic “1” and VILT (0.1 VDD) for a logic “0”. Measurement reference points
for inputs and outputs are VIT (0.5 VDD) and VOT (0.5 VDD). Input rise and fall times (10% ↔ 90%) are <5 ns.
Note: VIT - VINPUT Test
VOT - VOUTPUT Test
VIHT - VINPUT HIGH Test
VILT - VINPUT LOW Test
FIGURE 17: AC INPUT/OUTPUT REFERENCE WAVEFORMS
TO TESTER
TO DUT
CL
1223 F15.0
FIGURE 18: A TEST LOAD EXAMPLE
©2005 Silicon Storage Technology, Inc.
S71223-04-000
22
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
Start
Load data: XXAAH
Address: 5555H
Load data: XX55H
Address: 2AAAH
Load data: XXA0H
Address: 5555H
Load Word
Address/Word
Data
Wait for end of
Program (TBP,
Data# Polling
bit, or Toggle bit
operation)
Program
Completed
1223 F16.0
X can be VIL or VIH, but no other value
FIGURE 19: WORD-PROGRAM ALGORITHM
©2005 Silicon Storage Technology, Inc.
S71223-04-000
23
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
Internal Timer
Toggle Bit
Data# Polling
Program/Erase
Initiated
Program/Erase
Initiated
Program/Erase
Initiated
Wait TBP,
TSCE, TSE
or TBE
Read word
Read DQ7
Read same
word
Program/Erase
Completed
No
Is DQ7 =
true data?
Yes
No
Does DQ6
match?
Program/Erase
Completed
Yes
Program/Erase
Completed
1223 F17.0
FIGURE 20: WAIT OPTIONS
©2005 Silicon Storage Technology, Inc.
S71223-04-000
24
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
CFI Query Entry
Command Sequence
Sec ID Query Entry
Command Sequence
Software Product ID Entry
Command Sequence
Load data: XXAAH
Address: 5555H
Load data: XXAAH
Address: 5555H
Load data: XXAAH
Address: 5555H
Load data: XX55H
Address: 2AAAH
Load data: XX55H
Address: 2AAAH
Load data: XX55H
Address: 2AAAH
Load data: XX98H
Address: 5555H
Load data: XX88H
Address: 5555H
Load data: XX90H
Address: 5555H
Wait TIDA
Wait TIDA
Wait TIDA
Read CFI data
Read Sec ID
Read Software ID
X can be VIL or VIH, but no other value
1223 F21.0
FIGURE 21: SOFTWARE ID/CFI ENTRY COMMAND FLOWCHARTS
©2005 Silicon Storage Technology, Inc.
S71223-04-000
25
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
Software ID Exit/CFI Exit/Sec ID Exit
Command Sequence
Load data: XXAAH
Address: 5555H
Load data: XXF0H
Address: XXH
Load data: XX55H
Address: 2AAAH
Wait TIDA
Load data: XXF0H
Address: 5555H
Return to normal
operation
Wait TIDA
Return to normal
operation
X can be VIL or VIH, but no other value
1223 F18.1
FIGURE 22: SOFTWARE ID/CFI EXIT COMMAND FLOWCHARTS
©2005 Silicon Storage Technology, Inc.
S71223-04-000
26
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
Chip-Erase
Command Sequence
Sector-Erase
Command Sequence
Block-Erase
Command Sequence
Load data: XXAAH
Address: 5555H
Load data: XXAAH
Address: 5555H
Load data: XXAAH
Address: 5555H
Load data: XX55H
Address: 2AAAH
Load data: XX55H
Address: 2AAAH
Load data: XX55H
Address: 2AAAH
Load data: XX80H
Address: 5555H
Load data: XX80H
Address: 5555H
Load data: XX80H
Address: 5555H
Load data: XXAAH
Address: 5555H
Load data: XXAAH
Address: 5555H
Load data: XXAAH
Address: 5555H
Load data: XX55H
Address: 2AAAH
Load data: XX55H
Address: 2AAAH
Load data: XX55H
Address: 2AAAH
Load data: XX10H
Address: 5555H
Load data: XX30H
Address: SAX
Load data: XX50H
Address: BAX
Wait TSCE
Wait TSE
Wait TBE
Chip erased
to FFFFH
Sector erased
to FFFFH
Block erased
to FFFFH
1223 F19.0
X can be VIL or VIH, but no other value
FIGURE 23: ERASE COMMAND SEQUENCE
©2005 Silicon Storage Technology, Inc.
S71223-04-000
27
11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
PRODUCT ORDERING INFORMATION
SST
39
XX
VF 6402
XX XXXX
- 70
- XXX
-
4C
XX
EK
- XXX
E
X
Environmental Attribute
E1 = non-Pb
Package Modifier
K = 48 balls or leads
Package Type
E = TSOP (type1, die up, 12mm x 20mm)
B3 = TFBGA (6mm x 8mm, 0.8mm pitch)
B1 = TFBGA (8mm x 10mm, 0.8mm pitch)
Temperature Range
C = Commercial = 0°C to +70°C
I = Industrial = -40°C to +85°C
Minimum Endurance
4 = 10,000 cycles
Read Access Speed
70 = 70 ns
90 = 90 ns
Hardware Block Protection
1 = Bottom Boot-Block
2 = Top Boot-Block
Device Density
160 = 16 Mbit
320 = 32 Mbit
640 = 64 Mbit
Voltage
V = 2.7-3.6V
Product Series
39 = Multi-Purpose Flash
1. Environmental suffix “E” denotes non-Pb solder.
SST non-Pb solder devices are “RoHS Compliant”.
Valid Combinations for SST39VF1601
SST39VF1601-70-4C-EK
SST39VF1601-70-4C-EKE
SST39VF1601-90-4C-EK
SST39VF1601-90-4C-EKE
SST39VF1601-70-4C-B3K
SST39VF1601-70-4C-B3KE
SST39VF1601-90-4C-B3K
SST39VF1601-90-4C-B3KE
SST39VF1601-70-4I-EK
SST39VF1601-70-4I-EKE
SST39VF1601-90-4I-EK
SST39VF1601-90-4I-EKE
SST39VF1601-70-4I-B3K
SST39VF1601-70-4I-B3KE
SST39VF1601-90-4I-B3K
SST39VF1601-90-4I-B3KE
©2005 Silicon Storage Technology, Inc.
S71223-04-000
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11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
Valid Combinations for SST39VF1602
SST39VF1602-70-4C-EK
SST39VF1602-70-4C-EKE
SST39VF1602-90-4C-EK
SST39VF1602-90-4C-EKE
SST39VF1602-70-4C-B3K
SST39VF1602-70-4C-B3KE
SST39VF1602-90-4C-B3K
SST39VF1602-90-4C-B3KE
SST39VF1602-70-4I-EK
SST39VF1602-70-4I-EKE
SST39VF1602-90-4I-EK
SST39VF1602-90-4I-EKE
SST39VF1602-70-4I-B3K
SST39VF1602-70-4I-B3KE
SST39VF1602-90-4I-B3K
SST39VF1602-90-4I-B3KE
Valid Combinations for SST39VF3201
SST39VF3201-70-4C-EK
SST39VF3201-70-4C-EKE
SST39VF3201-90-4C-EK
SST39VF3201-90-4C-EKE
SST39VF3201-70-4C-B3K
SST39VF3201-70-4C-B3KE
SST39VF3201-90-4C-B3K
SST39VF3201-90-4C-B3KE
SST39VF3201-70-4I-EK
SST39VF3201-70-4I-EKE
SST39VF3201-90-4I-EK
SST39VF3201-90-4I-EKE
SST39VF3201-70-4I-B3K
SST39VF3201-70-4I-B3KE
SST39VF3201-90-4I-B3K
SST39VF3201-90-4I-B3KE
Valid Combinations for SST39VF3202
SST39VF3202-70-4C-EK
SST39VF3202-70-4C-EKE
SST39VF3202-90-4C-EK
SST39VF3202-90-4C-EKE
SST39VF3202-70-4C-B3K
SST39VF3202-70-4C-B3KE
SST39VF3202-90-4C-B3K
SST39VF3202-90-4C-B3KE
SST39VF3202-70-4I-EK
SST39VF3202-70-4I-EKE
SST39VF3202-90-4I-EK
SST39VF3202-90-4I-EKE
SST39VF3202-70-4I-B3K
SST39VF3202-70-4I-B3KE
SST39VF3202-90-4I-B3K
SST39VF3202-90-4I-B3KE
Valid Combinations for SST39VF6401
SST39VF6401-70-4C-EK
SST39VF6401-70-4C-EKE
SST39VF6401-90-4C-EK
SST39VF6401-90-4C-EKE
SST39VF6401-70-4C-B1K
SST39VF6401-70-4C-B1KE
SST39VF6401-90-4C-B1K
SST39VF6401-90-4C-B1KE
SST39VF6401-70-4I-EK
SST39VF6401-70-4I-EKE
SST39VF6401-90-4I-EK
SST39VF6401-90-4I-EKE
SST39VF6401-70-4I-B1K
SST39VF6401-70-4I-B1KE
SST39VF6401-90-4I-B1K
SST39VF6401-90-4I-B1KE
Valid Combinations for SST39VF6402
SST39VF6402-70-4C-EK
SST39VF6402-70-4C-EKE
SST39VF6402-90-4C-EK
SST39VF6402-90-4C-EKE
SST39VF6402-70-4C-B1K
SST39VF6402-70-4C-B1KE
SST39VF6402-90-4C-B1K
SST39VF6402-90-4C-B1KE
SST39VF6402-70-4I-EK
SST39VF6402-70-4I-EKE
SST39VF6402-90-4I-EK
SST39VF6402-90-4I-EKE
SST39VF6402-70-4I-B1K
SST39VF6402-70-4I-B1KE
SST39VF6402-90-4I-B1K
SST39VF6402-90-4I-B1KE
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations and to determine availability of new combinations.
©2005 Silicon Storage Technology, Inc.
S71223-04-000
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11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
PACKAGING DIAGRAMS
1.05
0.95
Pin # 1 Identifier
0.50
BSC
0.27
0.17
12.20
11.80
0.15
0.05
18.50
18.30
DETAIL
1.20
max.
0.70
0.50
20.20
19.80
0˚- 5˚
Note: 1. Complies with JEDEC publication 95 MO-142 DD dimensions,
although some dimensions may be more stringent.
2. All linear dimensions are in millimeters (max/min).
3. Coplanarity: 0.1 mm
4. Maximum allowable mold flash is 0.15 mm at the package ends, and 0.25 mm between leads.
0.70
0.50
1mm
48-tsop-EK-8
48-LEAD THIN SMALL OUTLINE PACKAGE (TSOP) 12MM X 20MM
SST PACKAGE CODE: EK
©2005 Silicon Storage Technology, Inc.
S71223-04-000
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11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
TOP VIEW
BOTTOM VIEW
8.00 ± 0.20
5.60
0.45 ± 0.05
(48X)
0.80
6
6
5
5
4.00
4
4
6.00 ± 0.20
3
3
2
2
1
1
0.80
A B C D E F G H
A1 CORNER
SIDE VIEW
H G F E D C B A
A1 CORNER
1.10 ± 0.10
0.12
SEATING PLANE
1mm
0.35 ± 0.05
Note:
1. Complies with JEDEC Publication 95, MO-210, variant 'AB-1', although some dimensions may be more stringent.
2. All linear dimensions are in millimeters.
3. Coplanarity: 0.12 mm
4. Ball opening size is 0.38 mm (± 0.05 mm)
48-tfbga-B3K-6x8-450mic-4
48-BALL THIN-PROFILE, FINE-PITCH BALL GRID ARRAY (TFBGA) 6MM X 8MM
SST PACKAGE CODE: B3K
©2005 Silicon Storage Technology, Inc.
S71223-04-000
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11/05
16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Data Sheet
TOP VIEW
BOTTOM VIEW
10.00 ± 0.20
5.60
0.80
6
6
5
5
4.00
4
4
8.00 ± 0.20
3
3
2
2
1
1
0.80
0.45 ± 0.05
(48X)
H G F E D C B A
A B C D E F G H
A1 CORNER
A1 CORNER
1.10 ± 0.10
SIDE VIEW
0.12
1mm
SEATING PLANE
0.35 ± 0.05
Note:
1. Although many dimensions are similar to those of JEDEC Publication 95, MO-210, this specific package is not registered.
2. All linear dimensions are in millimeters.
3. Coplanarity: 0.12 mm
48-tfbga-B1K-8x10-450mic-4
4. Ball opening size is 0.38 mm (± 0.05 mm)
48-BALL THIN-PROFILE, FINE-PITCH BALL GRID ARRAY (TFBGA) 8MM X 10MM
SST PACKAGE CODE: B1K
TABLE 18: REVISION HISTORY
Number
Description
Date
00
•
Initial release
Mar 2003
01
•
Corrected Pin 15 from A20 to NC for SST39VF160x in Figure 1 on page 6
Apr 2003
02
•
Changed data sheet title
Jun 2003
03
•
•
•
2004 Data Book
Updated the B3K and B1K package diagrams
Added non-Pb MPNs and removed footnote. (See page 28)
Nov 2003
04
•
Added RoHS compliance information on page 1 and in the “Product Ordering Information” on page 28
Corrected the solder temperature profile in “Absolute Maximum Stress Ratings” on
page 12
Changed product status from “Preliminary Specifications” to “Data Sheet”
Nov 2005
•
•
Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036
www.SuperFlash.com or www.sst.com
©2005 Silicon Storage Technology, Inc.
S71223-04-000
32
11/05
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