TDA7293 120-volt, 100-watt, DMOS audio amplifier with mute and standby Features

TDA7293 120-volt, 100-watt, DMOS audio amplifier with mute and standby Features
TDA7293
120-volt, 100-watt, DMOS audio amplifier
with mute and standby
Features
„
Multipower BCD technology
„
Very high operating voltage range (±50 V)
„
DMOS power stage
„
High output power (100 W into 8 Ω
@ THD =10%, with VS = ±40 V)
„
Muting and stand-by functions
„
No switch on/off noise
„
Very low distortion
„
Very low noise
„
Short-circuit protected (with no input signal
applied)
„
Thermal shutdown
„
Clip detector
„
Modularity (several devices can easily be
connected in parallel to drive very low
impedances)
Multiwatt15V
class AB amplifier in Hi-Fi field applications, such
as home stereo, self powered loudspeakers and
Topclass TV. Thanks to the wide voltage range
and to the high output current capability it is able
to supply the highest power into both 4-Ω and 8-Ω
loads.
The built-in muting function with turn-on delay
simplifies the remote operation avoiding on-off
switching noises.
Parallel mode is possible by connecting several
devices and using pin11. High output power can
be delivered to very low impedance loads, so
optimizing the thermal dissipation of the system
Table 1.
Description
Device summary
Order code
The TDA7293 is a monolithic integrated circuit in
Multiwatt15 package, intended for use as audio
Figure 1.
Multiwatt15H
Package
TDA7293V
Multiwatt15V
TDA7293HS
Multiwatt15H
TDA7293 block diagram
+Vs
C7 100nF
C6 1000µF
R3 22K
C2
22µF
BUFFER DRIVER
+Vs
R2
680Ω
C1 470nF
IN-
2
IN+
3
+PWVs
11
7
13
-
R1 22K
SGND
R5 10K
MUTE
STBY
12
BOOT
LOADER
C5
22µF
6
10
5
THERMAL
SHUTDOWN
MUTE
VSTBY
OUT
4
(**)
VMUTE
14
+
9
S/C
PROTECTION
(*)
BOOTSTRAP
CLIP DET
VCLIP
STBY
R4 22K
C3 10µF
C4 10µF
1
8
15
STBY-GND
-Vs
-PWVs
C9 100nF
C8 1000µF
D97AU805A
(*) see Application note
(**) for SLAVE function
September 2010
Doc ID 6744 Rev 8
-Vs
1/21
www.st.com
21
Contents
TDA7293
Contents
1
Pin connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
4
5
6
2/21
2.1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Circuit description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.1
Output Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.2
Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.3
Other Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Applications information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1
Applications suggestions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.2
High efficiency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.3
Bridge application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.4
Modular application (ref. figure 12) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.5
Bootstrap capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.1
Vertically-mounted package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.2
Horizontally-mounted package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Doc ID 6744 Rev 8
TDA7293
1
Pin connections
Pin connections
Figure 2.
Pin connections
15
-VS (POWER)
14
OUT
13
+VS (POWER)
12
BOOTSTRAP LOADER
11
BUFFER DRIVER
10
MUTE
9
STAND-BY
8
-VS (SIGNAL)
7
+VS (SIGNAL)
6
BOOTSTRAP
5
CLIP AND SHORT CIRCUIT DETECTOR
4
SIGNAL GROUND
3
NON INVERTING INPUT
2
INVERTING INPUT
1
STAND-BY GND
TAB CONNECTED TO PIN 8
Doc ID 6744 Rev 8
D97AU806
3/21
Electrical specifications
TDA7293
2
Electrical specifications
2.1
Absolute maximum ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Supply voltage (no signal)
±60
V
V1
VSTANDBY GND voltage referred to -VS (pin 8)
90
V
V2
Input voltage (inverting) referred to -VS
90
V
V2 - V3
Maximum differential inputs
±30
V
V3
Input voltage (non inverting) referred to -VS
90
V
V4
Signal GND voltage referred to -VS
90
V
V5
Clip detector voltage referred to -VS
120
V
V6
Bootstrap voltage referred to -VS
120
V
V9
Standby voltage referred to -VS
120
V
V10
Mute voltage referred to -VS
120
V
V11
Buffer voltage referred to -VS
120
V
V12
Bootstrap loader voltage referred to -VS
100
V
IO
Output peak current
10
A
Ptot
Power dissipation Tcase = 70°C
50
W
Top
Operating ambient temperature range
0 to 70
°C
Tstg, Tj
Storage and junction temperature
150
°C
VS
Supply voltage (no signal)
±60
V
V1
VSTANDBY GND voltage referred to -VS (pin 8)
90
V
±1500
V
Thermal data
Table 3.
Symbol
Rthj-case
4/21
Unit
VS
ESD maximum withstanding voltage range,
VESD_HBM test condition CDF-AEC-Q100-002- ”Human body
model”
2.2
Value
Thermal data
Parameter
Thermal resistance junction to case
Doc ID 6744 Rev 8
Min
-
Typ
1
Max
1.5
Unit
°C/W
TDA7293
2.3
Electrical specifications
Electrical characteristics
The specifications given here were obtained with the conditions VS = ±40 V, RL = 8 Ω,
Rg = 50 Ω, Tamb = 25 °C, f = 1 kHz unless otherwise specified.
Table 4.
.
Electrical characteristics
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
VS
Supply range
-
±12
-
±50
V
Iq
Quiescent current
-
-
50
100
mA
I
b
Input bias current
-
-
0.3
1
µA
VOS
Input offset voltage
-
-10
-
10
mV
IOS
Input offset current
-
-
-
0.2
µA
d = 1%, RL = 4 Ω,
VS = ±29 V
75
80
80
-
W
d = 10%, RL = 4Ω,
VS = ±29 V
90
100
100
-
W
PO = 5 W, f = 1 kHz
-
0.005
-
%
PO = 0.1 to 50 W,
f = 20 Hz to 15 kHz
-
-
0.1
%
PO
d
Continuous output power
Total harmonic distortion
(1)
ISC
Current limiter threshold
VS ≤ ±40 V
-
6.5
-
A
SR
Slew rate
-
5
10
-
V/µs
GV
Open loop voltage gain
-
-
80
-
dB
-
29
30
31
dB
A = curve
-
1
-
µV
f = 20 Hz to 20 kHz
-
3
10
µV
(2)
GV
Closed loop voltage gain
eN
Total input noise
Ri
Input resistance
-
100
-
-
kΩ
SVR
Supply voltage rejection
f = 100 Hz,
Vripple = 0.5 V RMS
-
75
-
dB
Device mutes
-
150
-
TS
Thermal protection
°C
Device shuts down
-
160
-
°C
Standby function (ref. to to pin 1)
VST on
Standby on threshold
-
-
-
1.5
V
VST off
Standby off threshold
-
3.5
-
-
V
ATTst-by
Standby attenuation
-
70
90
-
dB
Iq st-by
Quiescent current @ standby
-
-
0.5
1
mA
Mute function (ref. to pin 1)
VMon
Mute on threshold
-
-
-
1.5
V
VMoff
Mute off threshold
-
3.5
-
-
V
ATTmute
Mute attenuatIon
-
60
80
-
dB
Doc ID 6744 Rev 8
5/21
Electrical specifications
Table 4.
TDA7293
Electrical characteristics (continued)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
Clip detector
Duty
ICLEAK
Duty cycle ( pin 5)
-
d = 1%,
RPULLUP = 10 kΩ to 5 V
-
10
-
%
d = 10%,
RPULLUP = 10 kΩ to 5 V
30
40
50
%
PO = 50 W
-
-
3
µA
Slave function pin 4 (ref. to pin 8)
VSlave
Slavethreshold
-
-
-
1
V
VMaster
Master threshold
-
3
-
-
V
1. Tested with optimized applications board (see fig. 3)
2. GVmin ≥ 26dB
Note:
Pin 11 only for modular connection. Max external load 1 MΩ / 10 pF, only for test purposes
Figure 3.
6/21
Typical application PCB and component layout
Doc ID 6744 Rev 8
TDA7293
3
Circuit description
Circuit description
In consumer electronics, an increasing demand has arisen for very high power monolithic
audio amplifiers able to match, with a low cost, the performance obtained from the best
discrete designs.
The task of realizing this linear integrated circuit in conventional bipolar technology is made
extremely difficult by the occurence of 2nd breakdown phoenomenon. It limits the safe
operating area (SOA) of the power devices, and, as a consequence, the maximum
attainable output power, especially in presence of highly reactive loads.
Moreover, full exploitation of the SOA translates into a substantial increase in circuit and
layout complexity due to the need of sophisticated protection circuits.
To overcome these substantial drawbacks, the use of power MOS devices, which are
immune from secondary breakdown is highly desirable.
The device described has therefore been developed in a mixed bipolar-MOS high voltage
technology called BCDII 100/120.
3.1
Output Stage
The main design task in developping a power operational amplifier, independently of the
technology used, is that of realization of the output stage.
The solution shown as a principle shematic by Fig6 represents the DMOS unity - gain output
buffer of the TDA7293.
Figure 4.
Schematic of a DMOS unity-gain buffer
This large-signal, high-power buffer must be capable of handling extremely high current and
voltage levels while maintaining acceptably low harmonic distortion and good behaviour
over frequency response; moreover, an accurate control of quiescent current is required.
A local linearizing feedback, provided by differential amplifier A, is used to fullfil the above
requirements, allowing a simple and effective quiescent current setting. Proper biasing of
the power output transistors alone is however not enough to guarantee the absence of
crossover distortion.
Doc ID 6744 Rev 8
7/21
Circuit description
TDA7293
While a linearization of the DC transfer characteristic of the stage is obtained, the dynamic
behaviour of the system must be taken into account.
A significant aid in keeping the distortion contributed by the final stage as low as possible is
provided by the compensation scheme, which exploits the direct connection of the Miller
capacitor at the amplifier’s output to introduce a local AC feedback path enclosing the output
stage itself.
3.2
Protection
In designing a power IC, particular attention must be reserved to the circuits devoted to
protection of the device from short circuit or overload conditions. Due to the absence of the
2nd breakdown phenomenon, the SOA of the power DMOS transistors is delimited only by a
maximum dissipation curve dependent on the duration of the applied stimulus.
In order to fully exploit the capabilities of the power transistors, the protection scheme
implemented in this device combines a conventional SOA protection circuit with a novel local
temperature sensing technique which " dynamically" controls the maximum dissipation.
In addition to the overload protection described above, the device features a thermal
shutdown circuit which initially puts the device into a muting state (@ Tϕ = 150 °C) and then
into stand-by (@ Tj = 160 °C).
Full protection against electrostatic discharges on very pin is included.
3.3
Other Features
The device is provided with both standby and mute functions, independently driven by two
CMOS logic compatible input pins.
The circuits dedicated to the switching on and off of the amplifier have been carefully
optimized to avoid any kind of uncontrolled audible transient at the output.
The sequence that we recommend during the on/off transients is shown in Figure 8. The
application of figure 9 shows the possibility of sing only one command for both st-by and
mute functions. On both the pins, the maximum applicable range corresponds to the
operating supply voltage.
8/21
Doc ID 6744 Rev 8
TDA7293
Circuit description
Figure 5.
Suggested turn-on/off sequence
+Vs
(V)
+40
-40
-Vs
VIN
(mV)
VST-BY
PIN #9
(V)
5V
VMUTE
PIN #10
(V)
5V
IQ
(mA)
VOUT
(V)
OFF
ST-BY
PLAY
ST-BY
MUTE
OFF
MUTE
D98AU817
Figure 6.
Single signal standby/mute control circuit
MUTE
MUTE/
ST-BY
STBY
20K
10K
30K
1N4148
10µF
10µF
D93AU014
Doc ID 6744 Rev 8
9/21
Applications information
TDA7293
4
Applications information
4.1
Applications suggestions
The recommended values of the external components are those shown on the application
circuit of Figure 1 on page 1. Different values can, however, be used and the following table
could be useful when choosing alternative values.
Table 5.
Component
Choosing alternative component values
Suggested
value
Larger than
suggested
Purpose
Smaller than
suggested
Increase input
impedance
Decrease input
impedance
Decrease of gain
Increase of gain
Increase of gain
Decrease of gain
Standby time constant
Larger Standby
on/off time
Smaller standby
ON/OFF time; pop
noise
10 kΩ
Mute time constant
Larger mute
on/off time
Smaller mute
on/off time
C1
0.47 µF
Input DC decoupling
-
Higher low-frequency
cutoff
C2
22 µF
Feedback DC
decoupling
-
Higher low-frequency
cutoff
C3
10 µF
Mute time constant
Larger mute
on/off time
Smaller mute on/off
time
C4
10 µF
Standby time constant
Larger standby
on/off time
Smaller standby on/off
time; pop noise
C5
22 µF (3) x N Bootstrapping
-
Signal degradation at
low frequency
C6, C8
1000 µF
Supply voltage bypass -
-
C7, C9
0.1 µF
Supply voltage bypass -
Danger of oscillation
R1 (1)
22 kΩ
Input resistance
R2
680 Ω
22 kΩ
Closed loop gain,
set to 30 dB (2)
R4
22 kΩ
R5
R3
(1)
1. R1 = R3 for pop optimization
2. Closed loop gain has to be ³ 26dB
3. Multiply this value by the number, N, of modular parts connected
Figure 7.
Slave function: pin 4 (Ref to pin 8)
Note:
If in the application the speakers are
connected via long wires, it is a good rule
MASTER
to add, between the output and GND, a
-VS +3V
boucherot cell in order to avoid dangerous
spurious oscillations if the speakers
UNDEFINED
-VS +1V
terminal are shorted.
The suggested boucherot resistor is
SLAVE
-VS
3.9Ω/2W and the capacitor is 1µF.
D98AU821
10/21
Doc ID 6744 Rev 8
TDA7293
4.2
Applications information
High efficiency
Constraints of implementing high power solutions are the power dissipation and the size of
the power supply. These are both due to the low efficiency of conventional AB class
amplifier approaches.
The circuit below in Figure 8 is a high efficiency amplifier which can be adopted for both hi-fi
and car-radio applications. The TDA7293 is a monolithic MOS power amplifier which can be
operated with a 100-V supply (120 V with no signal applied) while delivering output currents
up to ±6.5 A. This allows the use of this device as a very high-power amplifier (up to 180 W
peak power with THD = 10% and RL = 4 Ω); the only drawback is the power dissipation,
hardly manageable in the above power range.
The typical junction-to-case thermal resistance of the TDA7293 is 1 °C/W (max = 1.5 °C/W).
In worst case conditions, to avoid the chip temperature exceeding 150 °C the thermal
resistance of the heatsink must be 0.038 °C/W (at a maximum ambient temperature of
50 °C).
As the above value is pratically unreachable, a high efficiency system is needed in those
cases where the continuous average output power is higher than 50 to 60 W.
The TDA7293 was designed to work also in a higher efficiency way. For this reason there
are four power supply pins: two intended for the signal part and two for the power part. T1
and T2 are two power transistors that only operate when the output power reaches a certain
threshold (for example, 20 W).
If the output power increases, these transistors are switched on during the portion of the
signal where more output voltage swing is needed, thus "bootstrapping" the power supply
pins (13 and 15). The current generators formed by T4, T7, zener diodes Z1, Z2 and
resistors R7, R8 define the minimum drop across the power MOS transistors of the
TDA7293. L1, L2, L3 and the snubbers C9, R1 and C10, R2 stabilize the loops formed by
the "bootstrap" circuits and the output stage of the TDA7293.
By considering again a maximum average output power (music signal) of 20 W, in case of
the high efficiency application, the thermal resistance value needed from the heatsink is
2.2 °C/W (with VS = ±50 V and RL = 8 Ω). All components (TDA7293 and power transistors
T1 and T2) can be placed on a 1.5 °C/W heatsink, with the power darlingtons electrically
insulated from the heatsink.
Since the total power dissipation is less than that of a usual class AB amplifier, additional
cost savings can be obtained while optimizing the power supply, even with a large heatsink.
4.3
Bridge application
Another application suggestion is the bridge configuration, where two TDA7293 are used.
In this application, the value of the load must not be lower than 8 Ω for dissipation and
current capability reasons.
A suitable field of application includes hi-fi/TV subwoofer realizations. The main advantages
offered by this solution are:
z
High power performance with limited supply voltage level.
z
Considerably higher output power even with high load values, such as 16 Ω.
With RL = 8 Ω and VS = ±25 V, the maximum output power obtainable is 150 W, whilst with
RL = 16 Ω and VS = ±40 V, the maximum Pout is 200 W.
Doc ID 6744 Rev 8
11/21
Applications information
4.4
TDA7293
Modular application (ref. figure 12)
The modular application is where several devices operate in parallel.
The modular application allows very high power be delivered to very low-impedance loads.
In this type of application one device acts as a master and the others as slaves.
The slave power stages are driven by the master device and work in parallel together while
the input and the gain stages of the slave devices are disabled. The figure below shows the
connections required to configure two devices to work together.
4.5
z
The master chip connections are the same as the normal single ones.
z
The outputs can be connected together without the need of any ballast resistor.
z
The slave SGND pin must be tied to the negative supply.
z
The slave STANDBY and MUTE pins must be connected to the master STANDBY and
MUTE pins.
z
The bootstrap lines must be connected together and the bootstrap capacitor must be
increased: for N devices the bootstrap capacitor must be 22 µF times N.
z
The slave IN pin must be connected to the negative supply.
Bootstrap capacitor
For compatibility purpose with the previous devices of the family, the bootstrap capacitor can
be connected either between the bootstrap pin (6) and the output pin (14) or between the
bootstrap pin (6) and the bootstrap loader pin (12).
When the bootstrap is connected between pins 6 and 14 the maximum supply voltage in the
presence of an output signal is limited to 100 V, due the bootstrap capacitor overvoltage.
When the bootstrap is connected between pins 6 and 12 the maximum supply voltage
extends to the full voltage that the technology can stand, in this case 120 V.
This is accomplished by the clamp introduced at the bootstrap loader pin (12). This pin
follows the output voltage up to 100 V and remains clamped at 100 V for higher output
voltages.
This feature lets the output voltage swing up to a gate-source voltage from the positive
supply (VS -3 to 6 V).
12/21
Doc ID 6744 Rev 8
TDA7293
Applications information
Figure 8.
High-efficiency applications circuit
+50V
D6
1N4001
T1
BDX53A
T3
BC394
R4
270
D1 BYW98100
+25V
R17 270
L1 1µH
D3 1N4148
C12 330nF
R20
20K
C1
1000µF
63V
C3
100nF
C5
1000µF
35V
C7
100nF
R22
10K
C9
330nF
IN
C2
1000µF
63V
13
TDA7293
C13 10µF
9
ST-BY
R21
20K
7
2
4
PLAY
GND
C4
100nF
C6
1000µF
35V
R23
10K
C8
100nF
R2
2
C10
330nF
D5
1N4148
R15 10K
10
C14
10µF
D2 BYW98100
-25V
D7
1N4001
R6
20K
C11 22µF
R7
3.3K
L3 5µH
OUT
R18 270
C15
22µF
R8
3.3K
12
8
C16
1.8nF
14
6
1
R3 680
R16
13K
R13 20K
R14 30K
T5
BC393
Z1 3.9V
3
R12
13K
R1
2
R5
270
T4
BC393
C17
1.8nF
Pot
15
Z2 3.9V
L2 1µH
D4 1N4148
T7
BC394
R19 270
T2
BDX54A
T6
BC393
R9
270
T8
BC394
R10
270
R11
20K
-50V
D97AU807C
Figure 9.
PCB and component layout of fig. 8
Doc ID 6744 Rev 8
13/21
Applications information
TDA7293
Figure 10. PCB - solder side of the Fig 9
Figure 11. Modular application circuit
+Vs
C7 100nF
C6 1000µF
R3 22K
MASTER
BUFFER
DRIVER
+Vs
C2
22µF
R2
680Ω
C1 470nF
IN-
2
IN+
3
+PWVs
11
7
13
-
R1 22K
VMUTE
R5 10K
SGND
4
MUTE
10
STBY
9
OUT
12
BOOT
LOADER
6
MUTE
VSTBY
14
+
THERMAL
SHUTDOWN
STBY
R4 22K
C4 10µF
S/C
PROTECTION
1
8
15
STBY-GND
-Vs
-PWVs
C9 100nF
C3 10µF
5
C10
100nF
R7
2Ω
C5
47µF
BOOTSTRAP
CLIP DET
C8 1000µF
-Vs
+Vs
C7 100nF
C6 1000µF
BUFFER
DRIVER
+Vs
IN-
2
IN+
3
SGND
4
MUTE
10
7
+PWVs
13
11
-
SLAVE
9
STBY
OUT
12
BOOT
LOADER
6
MUTE
THERMAL
SHUTDOWN
STBY
S/C
PROTECTION
1
8
15
STBY-GND
-Vs
-PWVs
C9 100nF
C8 1000µF
-Vs
14/21
14
+
Doc ID 6744 Rev 8
5
BOOTSTRAP
D97AU808D
TDA7293
Applications information
Figure 12. Modular application PCB and component layout (component side)
Figure 13. Modular application PCB and component layout (solder side)
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Applications information
TDA7293
Figure 14. Distortion vs output power
Figure 15. Distortion vs output power
Figure 16. Distortion vs frequency
Figure 17. Modular application derating rload
vs voltage supply (ref. fig. 12)
Figure 18. Modular application Pd vs voltage
supply (ref. fig. 12)
Figure 19. Output power vs. supply voltage
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TDA7293
5
Package mechanical data
Package mechanical data
The TDA7293 comes with a choice of two 15-pin packages, Multiwatt15V and Multiwatt15H.
The package sizes and outline drawings are given below.
5.1
Vertically-mounted package
Figure 20. Multiwatt15V package
DIM.
mm
MIN.
TYP.
inch
MAX.
MIN.
TYP.
A5
MAX.
0.197
B
2.65
C
1.6
D
OUTLINE AND
MECHANICAL DATA
0.104
0.063
1
0.039
E
0.49
0.55
0.019
F
0.66
0.75
0.026
0.022
G
1.02
1.27
1.52
0.040
0.050
0.060
G1
17.53
17.78
18.03
0.690
0.700
0.710
H1
19.6
0.030
0.772
H2
20.2
0.795
L
21.9
22.2
22.5
0.862
0.874
0.886
L1
21.7
22.1
22.5
0.854
0.87
0.886
L2
17.65
18.1
0.695
L3
17.25
17.5
17.75
0.679
0.689
0.699
L4
10.3
10.7
10.9
0.406
0.421
0.429
0.191
0.713
L7
2.65
2.9
0.104
M
4.25
4.55
4.85
0.167
0.179
0.114
M1
4.73
5.08
5.43
0.186
0.200
S
1.9
2.6
0.075
0.102
S1
1.9
2.6
0.075
0.102
Dia1
3.65
3.85
0.144
0.152
0.214
Multiwatt15 (Vertical)
0016036 J
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Package mechanical data
5.2
TDA7293
Horizontally-mounted package
Figure 21. Multiwatt15H outline
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TDA7293
Package mechanical data
Table 6.
Multiwatt15H dimensions
Dimension in mm
Dimension in inch
Ref
Notes
Min
Typ
Max
Min
Typ
Max
A
-
-
5.00
-
-
0.197
-
B
-
-
2.65
-
-
0.104
-
C
-
-
1.60
-
-
0.063
-
E
0.49
-
0.55
0.019
-
0.022
-
F
0.66
-
0.75
0.026
-
0.030
-
G
1.02
1.27
1.52
0.040
0.050
0.060
-
G1
17.53
17.78
18.03
0.690
0.700
0.710
-
H1
19.60
-
20.20
0.772
-
0.795
-
H2
19.60
-
20.20
0.772
-
0.795
-
L1
17.80
18.00
18.20
0.701
0.709
0.717
-
L2
2.30
2.50
2.80
0.091
0.098
0.110
-
L3
17.25
17.50
17.75
0.679
0.689
0.699
-
L4
10.30
10.70
10.90
0.406
0.421
0.429
-
L5
2.70
3.00
3.30
0.106
0.118
0.130
-
L7
2.65
-
2.90
0.104
-
0.114
-
N
-
-
-
-
-
-
-
P
-
-
-
-
-
-
-
R
-
1.50
-
-
0.059
-
-
R1
-
-
-
-
-
-
-
S
1.90
-
2.60
0.075
-
0.102
-
S1
1.90
-
2.60
0.075
-
0.102
-
V
-
-
-
-
-
-
-
Diam.1
3.65
-
3.85
0.144
-
0.152
-
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
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Revision history
6
TDA7293
Revision history
Table 7.
20/21
Document revision history
Date
Revision
Jan-2004
7
Aug-2004
7.1
24-Sep-2010
8
Changes
First Issue in EDOCS
Stylesheet update. No content change
Updated package dimensions for Multiwatt15H in Table 6 on page 19
Updated presentation throughout document.
Doc ID 6744 Rev 8
TDA7293
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