BZW04-5V8/376 BZW04-5V8B/376B TRANSIL

BZW04-5V8/376 BZW04-5V8B/376B TRANSIL
BZW04-5V8/376
BZW04-5V8B/376B
®
TRANSILTM
FEATURES
■
■
■
■
■
■
PEAK PULSE POWER : 400 W (10/1000µs)
STAND-OFF VOLTAGE RANGE :
From 5.8V to 376 V
UNI AND BIDIRECTIONAL TYPES
LOW CLAMPING FACTOR
FAST RESPONSE TIME
UL RECOGNIZED
DESCRIPTION
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes them particularly suited to protect voltage sensitive devices
such as MOS Technology and low voltage supplied IC’s.
DO-15
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
Parameter
Value
Unit
Peak pulse power dissipation (see note 1)
Tj initial = Tamb
400
W
Power dissipation on infinite heatsink
Tamb = 75°C
1.7
W
IFSM
Non repetitive surge peak forward current
for unidirectional types
tp = 10ms
Tj initial = Tamb
30
A
Tstg
Tj
Storage temperature range
Maximum junction temperature
- 65 to + 175
175
°C
°C
TL
Maximum lead temperature for soldering during 10s a 5mm
from case.
230
°C
PPP
P
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.
THERMAL RESISTANCES
Symbol
Parameter
Rth (j-l)
Junction to leads
Rth (j-a)
Junction to ambient on printed circuit.
February 2003- Ed : 3A
Llead = 10 mm
Value
Unit
60
°C/W
100
°C/W
1/6
BZW04-xx
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
I
IF
Symbol
Parameter
VRM
Stand-off voltage
VBR
Breakdown voltage
VCL
Clamping voltage
IRM
Leakage current @ VRM
IPP
Peak pulse current
αT
Voltage temperature coefficient
VF
Forward voltage drop
Types
VCL
V RM
V
I PP
IRM @ VRM
VBR
@
IR
min
µA
VCL @ IPP
max
note2
Bidirectional
VF
I RM
max
Unidirectional
VBR
VCL @ IPP
max
10/1000µs
8/20µs
αT
C
max
typ
note3
note4
V
V
mA
V
A
V
A
10-4/°C
pF
BZW04-5V8
BZW04-5V8B
1000
5.8
6.45
10
10.5
38.0
13.4
174
5.7
3500
BZW04-6V4
BZW04-6V4B
500
6.4
7.13
10
11.3
35.4
14.5
160
6.1
3100
BZW04-8V5
BZW04-8V5B
10
8.5
9.5
1
14.5
27.6
18.6
124
7.3
2000
BZW04-10
BZW04-10B
5
10.2
11.4
1
16.7
24.0
21.7
106
7.8
1550
BZW04-13
BZW04-13B
5
12.8
14.3
1
21.2
19.0
27.2
85
8.4
1200
BZW04-15
BZW04-15B
1
15.3
17.1
1
25.2
16.0
32.5
71
8.8
975
BZW04-19
BZW04-19B
1
18.8
20.9
1
30.6
13.0
39.3
59
9.2
800
BZW04-20
BZW04-20B
1
20.5
22.8
1
33.2
12.0
42.8
54
9.4
725
BZW04-23
BZW04-23B
1
23.1
25.7
1
37.5
10.7
48.3
48
9.6
625
BZW04-26
BZW04-26B
1
25.6
28.5
1
41.5
9.6
53.5
43
9.7
575
BZW04-28
BZW04-28B
1
28.2
31.4
1
45.7
8.8
59.0
39
9.8
510
BZW04-31
BZW04-31B
1
30.8
34.2
1
49.9
8.0
64.3
36
9.6
480
BZW04-33
BZW04-33B
1
33.3
37.1
1
53.9
7.4
69.7
33
10.0
450
BZW04-40
BZW04-40B
1
40.2
44.7
1
64.8
6.2
84
27
10.1
370
BZW04-48
BZW04-48B
1
47.8
53.2
1
77.0
5.2
100
23
10.3
320
BZW04-58
BZW04-58B
1
58.1
64.6
1
92.0
4.3
121
19
10.4
270
BZW04-70
BZW04-70B
1
70.1
77.9
1
113
3.5
146
16.0
10.5
230
BZW04-85
BZW04-85B
1
85.5
95.0
1
137
2.9
178
13.0
10.6
200
BZW04-102
BZW04-102B
1
102
114
1
165
2.4
212
11.0
10.7
170
BZW04-128
BZW04-128B
1
128
143
1
207
2.0
265
9.0
10.8
145
BZW04-154
BZW04-154B
1
154
171
1
246
1.6
317
7.0
10.8
125
BZW04-171
BZW04-171B
1
171
190
1
274
1.5
353
6.5
10.8
120
BZW04-188
BZW04-188B
1
188
209
1
328
1.4
388
6.0
10.8
110
BZW04-213
BZW04-213B
1
231
237
1
344
1.5
442
5.2
11.0
100
BZW04-256
BZW04-256B
1
256
285
1
414
1.2
529
4.3
11.0
90
2/6
BZW04-xx
Types
IRM @ VRM
VBR @
IR
min
max
note2
Unidirectional
Bidirectional
µA
VCL @ IPP
VCL @ IPP
max
10/1000µs
8/20µs
αT
C
max
typ
note3
note4
V
V
mA
V
A
V
A
10-4/°C
pF
BZW04-273
BZW04-273B
1
273
304
1
438
1.2
564
4.0
11.0
85
BZW04-299
BZW04-299B
1
299
332
1
482
0.9
618
3.7
11.0
80
BZW04-342
BZW04-342B
1
342
380
1
548
0.9
706
3.2
11.0
75
BZW04-376B
1
376
418
1
603
0.8
776
3.0
11.0
70
BZW04-376
Fig. 1: Peak pulse power dissipation versus initial
junction temperature (printed circuit board).
% I PP
100
10 s
PULSE WAVEFORM 10/1000 s
50
0
t
1000 s
Note 2 :
Note 3 :
Note 4 :
Pulse test: tp < 50 ms.
∆VBR = αT * (Tamb - 25) * VBR(25°C)
VR = 0 V, F = 1 MHz. For bidirectional types,
capacitance value is divided by 2
3/6
BZW04-xx
Fig. 2 : Peak pulse power versus exponential pulse duration.
PPP (W)
1E5
Tj initial = 25°C
1E4
1E3
1E2
tp (ms ) EXPO.
1E1
0.001
0.01
0.1
1
10
100
Fig. 3 : Clamping voltage versus peak pulse current.
Exponential waveform tp = 20 µs________
tp = 1 ms——————tp = 10 ms...............
VCL (V)
1000
% Ipp
BWZ04 - 376
Tj initial = 25°C
100
BWZ04 - 213
50
0
tr
t
t
t r < 10
s
100
BWZ04 - 33
10
BWZ04 - 8V5
BWZ04 - 5V8
Ipp (A)
1
0.1
1
10
100
1000
Note : The curves of the figure 3 are specified for a junction temperature of 25°C before surge.
The given results may be extrapolated for other junction temperatures by using the following formula :
∆VBR = αT * (Tamb -25) * VBR (25°C).
For intermediate voltages, extrapolate the given results.
4/6
BZW04-xx
Fig. 4a: Capacitance versus reverse applied
voltage for unidirectional types (typical values).
Fig. 4b: Capacitance versus reverse applied
voltage for bidirectional types (typical values).
C (pF)
C (pF)
10000
10000
BZW04 -
1000 BZW04 - 13
B Z W0 4 - 2
6
B ZW 0 4 - 5
8
100 BZW04 - 171
BZW04 -
Tj = 25ø
°C
f = 1 MHz
Tj = 25øC
f = 1 MHz
5V8
BZW04 - 5V8B
1000
BZW04 - 13B
BZW04 - 26B
342
100
BZW04 - 171B
10
10
10
1
100
Fig. 5: Peak forward voltage drop versus peak forward
current (typical values for unidirectional types).
Note : Multiply by 2 for units with VBR > 220V.
V R (V)
BZW04 - 342B
V R (V)
1
1
BZW04 - 58B
10
100
Fig. 6: Transient thermal impedance junction ambient versus pulse duration (For FR4 PC Board
with L lead = 10mm).
Zth (j-a) (°C/W)
100
10
tp(s)
1
0.01
0.1
1
10
100
1000
Fig. 7 : Relative variation of leakage current
versus junction temperature.
5/6
BZW04-xx
ORDER
BZW
04
-
10
B
RL
PACKAGING:
‘ ‘ = Ammopack tape
‘RL’ = Tape & reel
400W
BIDIRECTIONAL
No suffix: Unidirectional
STAND-OFF VOLTAGE
MARKING : Logo, Date Code, Type Code, Cathode Band (for unidirectional types only).
PACKAGE MECHANICAL DATA
DO-15 (Plastic)
REF.
DIMENSIONS
Millimeters
C
D
Inches
C
A
B
Min.
Max.
Min.
Max.
A
6.05
6.75
0.238
0.266
B
2.95
3.53
0.116
0.139
C
26
31
1.024
1.220
D
0.71
0.88
0.028
0.035
Packaging: standard packaging is in tape and reel.
Weight = 0.4 g.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
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Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore
Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
6/6
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