BLP8G10S-270PW 1. Product profile Power LDMOS transistor

BLP8G10S-270PW 1. Product profile Power LDMOS transistor
BLP8G10S-270PW
Power LDMOS transistor
Rev. 2 — 1 October 2015
Product data sheet
1. Product profile
1.1 General description
270 W LDMOS packaged symmetric Doherty power transistor for base station
applications at frequencies from 700 MHz to 900 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in a Doherty application test circuit. VDS = 28 V;
IDq = 500 mA (main); VGS(amp)peak = 0.5 V, unless otherwise specified.
Test signal
1-carrier W-CDMA
[1]
f
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(V)
(dBm)
(dB)
(%)
(dBc)
716 to 768
28
47.5
17.3
46
35 [1]
Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.65 dB at 0.01% probability on
CCDF per carrier.
1.2 Features and benefits









Excellent ruggedness
High-efficiency
Low thermal resistance providing excellent thermal stability
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Bias through video leads
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for base stations and multi carrier applications in the 700 MHz to
900 MHz frequency range
BLP8G10S-270PW
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
1, 2
gate
3, 6
bias/video decoupling
4, 5
drain
7
source
6
5
4
Graphic symbol
3
4
3
2
[1]
7
1
1
6
2
5
aaa-008888
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BLP8G10S-270PW HSOP6F plastic, heatsink small outline package; 6 leads (flat) SOT1221-2
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
drain-source voltage
-
65
V
VGS(amp)main
main amplifier gate-source voltage
0.5
+13
V
VGS(amp)peak
peak amplifier gate-source voltage
0.5
+13
V
Tstg
storage temperature
65
+150
C
Min
-
225
C
[1]
junction temperature
Tj
[1]
Conditions
Max
Unit
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
Table 5.
BLP8G10S-270PW
Product data sheet
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-c)
thermal resistance from
junction to case
VDS = 28 V; IDq = 650 mA (main);
VGS(amp)peak = 0.5 V; Tcase = 80 C;
Typ
Unit
PL = 56 W
0.50
K/W
PL = 89 W
0.43
K/W
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 October 2015
© Ampleon Netherlands B.V. 2016. All rights reserved.
2 of 15
BLP8G10S-270PW
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Per section; Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.25 mA
Min
Typ
Max Unit
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 225 mA
1.5
1.9
2.3
V
VGSq
gate-source quiescent voltage
VDS = 28 V; ID = 1000 mA
1.7
2.1
2.5
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
1.4
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
37.5 -
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
140
nA
gfs
forward transconductance
VDS = 10 V; ID = 11.25 mA
-
14
-
S
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 7875 mA
-
90
148
m
Table 7.
RF characteristics
Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.65 dB at 0.01 % probability
on the CCDF per carrier; f1 = 718.5 MHz; f2 = 765.5 MHz; RF performance at VDS = 28 V;
IDq = 2000 mA (main); Tcase = 25 C; unless otherwise specified; in a class AB production test circuit
at frequencies from 716 MHz to 768 MHz.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
RLin
power gain
PL(AV) = 56 W
19
20
-
dB
input return loss
PL(AV) = 56 W
-
16
12
dB
D
drain efficiency
PL(AV) = 56 W
25
29
-
%
ACPR
adjacent channel power ratio
PL(AV) = 56 W
-
38
33
dBc
Table 8.
RF characteristics
Test signal: pulsed RF; f1 = 718.5 MHz; f2 = 756.5 MHz; tp = 10 ms;  = 10 %; RF performance at
VDS = 28 V; IDq = 2000 mA (main); Tcase = 25 C; unless otherwise specified; in a class-AB narrow
band production circuit.
BLP8G10S-270PW
Product data sheet
Symbol
Parameter
PL(3dB)
output power at 3 dB gain compression
Conditions
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 October 2015
Min
Typ
Max
Unit
315
365
-
W
© Ampleon Netherlands B.V. 2016. All rights reserved.
3 of 15
BLP8G10S-270PW
Power LDMOS transistor
7. Application information
7.1 Application circuit
40 mm
40 mm
L3
C26
C5
L1
R3
C18
R2
C3
Q1
C17
C14
C16
C15
C1
C11
C7
R1
X1
C9
C10
C8
75 mm
C25
C12
C2
C4
Q2
C19
C21
C22
C13
C23
C6
R4
L2
C24
R5
L4
aaa-019800
Printed-Circuit Board (PCB): Rogers RO3006: r = 6.15; thickness = 0.635 mm; thickness copper
plating = 70 m. See Table 11 for a list of components.
Fig 1.
Component layout
Table 9.
List of components
See Figure 15 for component layout.
Component
Description
Value
Remarks
C1, C2, C3, C4, C14, C19, C25
multilayer ceramic chip capacitor
82 pF
ATC 600F
C5, C6, C16, C17, C22, C23, C26
multilayer ceramic chip capacitor
10 F
Murata: GRM32ER71H106KA12
C7, C8, C9, C10
multilayer ceramic chip capacitor
15 pF
ATC 600F
C11, C12
multilayer ceramic chip capacitor
5.6 pF
ATC 600F
C13
multilayer ceramic chip capacitor
1.8 pF
ATC 600F
C15, C21
multilayer ceramic chip capacitor
1 F
Murata: GRM31CR72A105KA01L
C18, C24
electrolytic capacitor
2200 F
Multicomp: MCGPR35V228M16X32
L1, L2, L3, L4
chip ferrite bead
-
Murata; BLE32PN300SN1L
Q1, Q2
transistor
-
Fairchild: MMBT2222
R1
resistor
50 
Panasonic: ERJ-L14KF50MU
R2, R4
resistor
1.1 k
Vishay Dale
BLP8G10S-270PW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 October 2015
© Ampleon Netherlands B.V. 2016. All rights reserved.
4 of 15
BLP8G10S-270PW
Power LDMOS transistor
Table 9.
List of components
See Figure 15 for component layout.
Component
Description
Value
Remarks
R3
resistor
1.2 k
Vishay Dale
R5
resistor
3.9 k
Vishay Dale
X1
hybrid coupler
3 dB, 90
Anaren: X3C07P1-03S
7.2 Graphical data measured at frequency band from 716 MHz to 768 MHz
7.2.1 Pulsed CW
aaa-019723
70
ηD
(%)
aaa-019724
19
Gp
(dB)
60
18
(3)
(2)
(1)
50
17
40
16
30
15
20
14
10
(3)
(2)
(1)
13
0
50
100
150
200
250
300 350
PL (W)
400
0
VDS = 28 V; IDq = 500 mA; VGS(amp)peak = 0.50 V;
tp = 100 s;  = 10 %.
50
100
(1) f = 716 MHz
(2) f = 742 MHz
(2) f = 742 MHz
(3) f = 768 MHz
(3) f = 768 MHz
Drain efficiency as a function of output power;
typical values
BLP8G10S-270PW
Product data sheet
200
250
300
PL (W)
350
VDS = 28 V; IDq = 500 mA; VGS(amp)peak = 0.50 V;
tp = 100 s;  = 10 %.
(1) f = 716 MHz
Fig 2.
150
Fig 3.
Power gain as a function of output power;
typical values
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Rev. 2 — 1 October 2015
© Ampleon Netherlands B.V. 2016. All rights reserved.
5 of 15
BLP8G10S-270PW
Power LDMOS transistor
7.2.2 1-Carrier W-CDMA
PAR = 9.7 dB per carrier at 0.01 % probability on the CCDF; 3GPP test model 1 with
64 DPCH (100 % clipping).
aaa-019725
18
Gp
(dB)
60
ηD
(%)
Gp
17
50
(1)
(1)
(2)
(2)
(3)
(3)
16
aaa-019726
-25
ACPR5M
(dBc)
-30
40
-35
15
30
14
20
-40
ηD
13
-45
10
12
0
20
40
60
80
PL (W)
(1)
(2)
(3)
0
100
-50
0
VDS = 28 V; IDq = 500 mA; VGS(amp)peak = 0.50 V.
20
(1) f = 716 MHz
(2) f = 742 MHz
(2) f = 742 MHz
(3) f = 768 MHz
60
80
PL (W)
100
VDS = 28 V; IDq = 500 mA; VGS(amp)peak = 0.50 V.
(1) f = 716 MHz
Fig 4.
40
(3) f = 768 MHz
Power gain and drain efficiency as function of
output power; typical values
Fig 5.
aaa-019727
11
PAR
(dB)
Adjacent channel power ratio (5 MHz) as a
function of output power; typical values
aaa-019728
21
RLin
(dB)
10
19
9
(3)
17
(2)
(1)
(2)
(3)
8
15
7
13
6
11
5
(1)
9
0
20
40
60
80
PL (W)
100
0
VDS = 28 V; IDq = 500 mA; VGS(amp)peak = 0.50 V.
20
(1) f = 716 MHz
(2) f = 742 MHz
(2) f = 742 MHz
(3) f = 768 MHz
(3) f = 768 MHz
Peak-to-average power ratio as a function of
output power; typical values
BLP8G10S-270PW
Product data sheet
60
80
PL (W)
100
VDS = 28 V; IDq = 500 mA; VGS(amp)peak = 0.50 V.
(1) f = 716 MHz
Fig 6.
40
Fig 7.
Input return loss as a function of output
power; typical values
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Rev. 2 — 1 October 2015
© Ampleon Netherlands B.V. 2016. All rights reserved.
6 of 15
BLP8G10S-270PW
Power LDMOS transistor
7.2.3 2-Carrier W-CDMA
PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test model 1 with 64 DPCH
(46 % clipping).
aaa-019729
19
Gp
(dB)
ηD
(%)
Gp
18
aaa-019730
-15
ACPR5M
(dBc)
-25
-15
(1)
(2)
(3)
40
-35
16
-5
ACPR10M
(dBc)
ACPR5M
50
(1)
(1)
(2)
(2)
(3)
(3)
17
60
-25
30
ACPR10M
-45
ηD
15
14
13
20
40
60
80
PL (W)
(1)
(2)
(3)
-55
10
0
-35
20
0
100
-65
0
VDS = 28 V; IDq = 500 mA; VGS(amp)peak = 0.50 V.
20
40
60
80
PL (W)
-55
100
VDS = 28 V; IDq = 500 mA; VGS(amp)peak = 0.50 V.
(1) f = 716 MHz
(1) f = 716 MHz
(2) f = 742 MHz
(2) f = 742 MHz
(3) f = 768 MHz
Fig 8.
-45
(3) f = 768 MHz
Power gain and drain efficiency as function of
output power; typical values
Fig 9.
Adjacent channel power ratio (5 MHz) and
adjacent channel power ratio (10 MHz) as
function of output power; typical values
aaa-019731
21
RLin
(dB)
19
(3)
17
(2)
(1)
15
13
11
9
0
20
40
60
80
PL (W)
100
VDS = 28 V; IDq = 500 mA; VGS(amp)peak = 0.50 V.
(1) f = 716 MHz
(2) f = 742 MHz
(3) f = 768 MHz
Fig 10. Input return loss as a function of output power; typical values
BLP8G10S-270PW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 October 2015
© Ampleon Netherlands B.V. 2016. All rights reserved.
7 of 15
BLP8G10S-270PW
Power LDMOS transistor
7.2.4 CW
aaa-019732
4
AM to PM
(deg)
0
aaa-019733
8
td(grp)
(ns)
4
-4
(1)
(2)
(3)
-8
0
-12
-4
-16
-20
30
35
40
45
50
55
PL (dBm)
-8
500
60
VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.50 V.
600
700
800
900
f (MHz)
1000
VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.50 V.
PL = 27.5 dBm.
(1) f = 716 MHz
(2) f = 742 MHz
(3) f = 768 MHz
Fig 11. AM to PM as a function of output power;
typical values
Fig 12. Group delay time as a function of frequency;
typical values
7.2.5 2-Tone VBW
aaa-019734
0
IMD
(dBc)
-15.2
(1)
(2)
IMD3
-30.4
IMD5
(1)
(2)
IMD7
-45.6
(1)
(2)
-60.8
-76
1
10
102
carrier spacing (MHz)
103
VDS = 28 V; IDq = 500 mA (main device); VGS(amp)peak = 0.50 V; f = 742 MHz.
(1) IMD low
(2) IMD high
Fig 13. VBW capability in Doherty demo
BLP8G10S-270PW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 October 2015
© Ampleon Netherlands B.V. 2016. All rights reserved.
8 of 15
BLP8G10S-270PW
Power LDMOS transistor
8. Test information
8.1 Ruggedness in Doherty operation
The BLP8G10S-270PW is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 2000 mA; f =719 MHz. Test signal: 1-carrier W-CDMA; PL = 85 W (5 dB OBO); 100 %
clipping
8.2 Impedance information
Table 10. Typical impedance of main or peak device
Measured load-pull data of main device; IDq = 700 mA (main); VDS = 28 V; pulsed CW (tp = 100 s;
 = 10 %).
f
ZS [1]
ZL [1]
PL [2]
D [2]
Gp [2]
(MHz)
()
()
(W)
(%)
(dB)
Maximum power load
728
3.1  j0.8
1.3  j2.0
261.2
60.0
17.3
748
3.1  j1.1
1.3  j1.9
258.6
60.6
17.3
768
3.1  j1.4
1.3  j1.9
252.1
60.3
17.4
869
4.4  j2.2
1.4  j2.6
240.6
60.1
17.3
880
4.7  j2.3
1.3  j2.6
237.3
59.9
17.3
894
5.1  j2.0
1.3  j2.6
235.9
60.5
17.3
Maximum drain efficiency load
728
3.1  j0.8
3.5  j1.1
164.7
73.4
20.0
748
3.1  j1.1
3.5  j0.7
150.3
73.2
20.2
768
3.1  j1.4
3.2  j0.7
150.3
72.2
20.0
869
4.4  j2.2
2.4  j1.0
141.9
71.4
19.8
880
4.7  j2.3
2.4  j1.0
136.7
70.4
19.7
894
5.1  j2.0
2.0  j1.4
155.9
70.3
19.3
[1]
ZS and ZL defined in Figure 14.
[2]
At 3 dB gain compression.
drain
ZL
gate
ZS
001aaf059
Fig 14. Definition of transistor impedance
BLP8G10S-270PW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 October 2015
© Ampleon Netherlands B.V. 2016. All rights reserved.
9 of 15
BLP8G10S-270PW
Power LDMOS transistor
8.3 Test circuit
150 mm
C11
C5
C9
C10
C3
C4
C15
R1
C1
60 mm
C2
C16
C14 C13
C6
C12
C8
C7
aaa--019710
Printed-Circuit Board (PCB): Rogers RO4350B: thickness = 0.762 mm; thickness copper plating = 35 m. See Table 11 for a
list of components.
Fig 15. Component layout
Table 11. List of components
See Figure 15 for component layout.
Component
Description
Value
C1, C3, C6, C9, C12
multilayer ceramic chip capacitor
82 pF
[1]
ATC 800B
multilayer ceramic chip capacitor
180 pF
[1]
ATC 800B
C4, C7, C10, C13
multilayer ceramic chip capacitor
1 F
[2]
Murata
C5, C8, C11, C14
multilayer ceramic chip capacitor
10 F, 50 V
[2]
Murata
C15, C16
electrolytic capacitor
2200 F, 63 V
R1
resistor
5 k
C2
BLP8G10S-270PW
Product data sheet
[1]
American Technical Ceramics type 800B or capacitor of same quality.
[2]
Murata or capacitor of same quality.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 October 2015
Remarks
SMD 1206
© Ampleon Netherlands B.V. 2016. All rights reserved.
10 of 15
BLP8G10S-270PW
Power LDMOS transistor
9. Package outline
HSOP6F: plastic, heatsink small outline package; 6 leads(flat)
SOT1221-2
D
E
X
c
B
D3
A
E3
y
v
HE
A
D1
D2
e1
e3
e2
b1 (2x)
b2 (2x)
6
5
4
w
B
w
B
3
(8x) METAL
PROTRUSIONS (SOURCE)
e7
(2x)
F (6x)
e6
(2x)
E2
E1
A
A2
A1
pin 1 index
Q1
detail X
2
b (2x)
1
e4 (2x)
w
B
e5 (2x)
e6
e
0
10 mm
scale
Dimensions (mm are the original dimensions)
Unit
mm
max
nom
min
A
A1
3.9
0.2
0.1
0
A2
b
b1
b2
D(1)
c
D1
D2
D3
E(1)
E1
e7
F
HE
Q1
16.16 1.62
2.97 4.07 0.4 15.96 1.57
15.76 1.52
E2
E3
e
3.65 4.05 3.55 0.50 0.27 20.62 19.00 16.05 20.44 10.01 8.18 5.89 9.83
3.60 4.00 3.50 0.45 0.22 20.57 18.95 16.00 20.39 9.96 8.13 5.84 9.78 8.0
3.55 3.95 3.45 0.40 0.17 20.52 18.90 15.95 20.34 9.91 8.08 5.79 9.73
v
w
0.25 0.25
e1
e2
e3
14.5
6.5
4.0
e4
Outline
version
SOT1221-2
IEC
JEDEC
JEITA
European
projection
e5
8.45 9.55
Note
1. Package body dimensions “D and “E do not include mold and metal protrusions. Allowable protrusion is 0.25 mm per side.
2. Lead width dimensions “b, “ b1 and “ b2 do not include dambar protrusions. Allowable dambar protrusion is 0.25 mm in total per lead.
References
y
0.1
sot1221-2_po
Issue date
15-01-12
15-06-08
---
Fig 16. Package outline SOT1221-2 (HSOP6F)
BLP8G10S-270PW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 October 2015
© Ampleon Netherlands B.V. 2016. All rights reserved.
11 of 15
BLP8G10S-270PW
Power LDMOS transistor
10. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
11. Abbreviations
Table 12.
Abbreviations
Acronym
Description
3GPP
3rd Generation Partnership Project
AM
Amplitude Modulation
CCDF
Complementary Cumulative Distribution Function
CW
Continuous Wave
DPCH
Dedicated Physical CHannel
ESD
ElectroStatic Discharge
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
MTF
Median Time to Failure
OBO
Output Back-Off
PAR
Peak-to-Average Ratio
PM
Phase Modulation
SMD
Surface Mounted Device
VBW
Video Bandwidth
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
12. Revision history
Table 13.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLP8G10S-270PW v.2
20151001
Product data sheet
-
BLP8G10S-270PW v.1
Modifications:
BLP8G10S-270PW v.1
BLP8G10S-270PW
Product data sheet
•
The format of this document has been redesigned to comply with the new identity guidelines
of Ampleon
•
Legal texts have been adapted to the new company name where appropriate
20150917
Product data sheet
-
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 October 2015
-
© Ampleon Netherlands B.V. 2016. All rights reserved.
12 of 15
BLP8G10S-270PW
Power LDMOS transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLP8G10S-270PW
Product data sheet
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 October 2015
© Ampleon Netherlands B.V. 2016. All rights reserved.
13 of 15
BLP8G10S-270PW
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
14. Contact information
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
BLP8G10S-270PW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 October 2015
© Ampleon Netherlands B.V. 2016. All rights reserved.
14 of 15
BLP8G10S-270PW
Power LDMOS transistor
15. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.2.1
7.2.2
7.2.3
7.2.4
7.2.5
8
8.1
8.2
8.3
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 4
Application circuit . . . . . . . . . . . . . . . . . . . . . . . 4
Graphical data measured at frequency band from
716 MHz to 768 MHz . . . . . . . . . . . . . . . . . . . . 5
Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 7
CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2-Tone VBW . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9
Ruggedness in Doherty operation . . . . . . . . . . 9
Impedance information . . . . . . . . . . . . . . . . . . . 9
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Handling information. . . . . . . . . . . . . . . . . . . . 12
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon Netherlands B.V. 2016.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 October 2015
Document identifier: BLP8G10S-270PW
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