S1223 series Si PIN photodiode For visible to IR, precision photometry Features

S1223 series Si PIN photodiode For visible to IR, precision photometry Features
PHOTODIODE
Si PIN photodiode
S1223 series
For visible to IR, precision photometry
Features
Applications
l High sensitivity
l High reliability
l High-speed response
l Optical measurement equipment
l Analytical equipment, etc.
S1223: fc=30 MHz
S1223-01: fc=20 MHz
l Low capacitance
■ General ratings
Parameter
Window material
Package
Active area size
Effective active area
Symbol
A
-
S1223
S1223-01
Unit
mm
mm2
borosilicate glass
TO-5
2.4 × 2.8
6.6
3.6 × 3.6
13
■ Absolute maximum ratings
Parameter
Symbol
Reverse voltage
VR Max.
Power dissipation
P
Operating temperature
Topr
Storage temperature
Tstg
S1223
S1223-01
Unit
V
mW
°C
°C
30
100
-40 to +100
-55 to +125
■ Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Spectral response range
Peak sensitivity wavelength
λ
λp
Photo sensitivity
Short circuit current
Dark current
Temp. coefficient of ID
Cut-off frequency
Terminal capacitance
Noise equivalent power
S
Condition
λ=λp
λ=660 nm
λ=780 nm
λ=830 nm
100 lx
VR=20 V
Isc
ID
TCID
fc
VR=20 V, -3 dB
Ct
VR=20 V, f=1 MHz
NEP VR=20 V, λ=λp
Min.
5
-
S1223
Typ.
320 to 1100
960
0.6
0.45
0.52
0.54
6.3
0.1
1.15
30
10
9.4 × 10-15
Max.
10
-
Min.
10
-
S1223-01
Typ.
320 to 1100
960
0.6
0.45
0.52
0.54
13
0.2
1.15
20
20
1.3 × 10-14
Max.
10
-
Unit
nm
nm
A/W
µA
nA
times/°C
MHz
pF
W/Hz1/2
1
Si PIN photodiode
■ Spectral response
■ Photo sensitivity temperature characteristic
(Typ. Ta=25 ˚C)
0.7
(Typ.)
TEMPERATURE COEFFICIENT (%/˚C)
+1.5
0.6
PHOTO SENSITIVITY (A/W)
S1223 series
0.5
0.4
0.3
0.2
0.1
0
200
400
600
800
+1.0
+0.5
0
-0.5
200
1000
WAVELENGTH (nm)
400
800
600
1000
WAVELENGTH (nm)
KPINB0144EA
KPINB0143EA
■ Dark current vs. reverse voltage
■ Terminal capacitance vs. reverse voltage
(Typ. Ta=25 ˚C)
DARK CURRENT
1 nA
100 pA
S1223-01
10 pA
S1223
1 pA
0.1
1
10
100 pF
S1223-01
10 pF
S1223
1 pF
0.1
100
REVERSE VOLTAGE (V)
(Typ. Ta=25 ˚C, f=1 MHz)
1 nF
TERMINAL CAPACITANCE
10 nA
1
10
100
REVERSE VOLTAGE (V)
KPINB0145EA
KPINB0146EA
■ Dimensional outline (unit: mm)
9.1 ± 0.2
8.1 ± 0.1
2.8
PHOTOSENSITIVE
SURFACE
4.1 ± 0.2
WINDOW
5.9 ± 0.1
20
0.45
LEAD
5.08 ± 0.2
CONNECTED TO CASE
The glass window may extend a
maximum of 0.2 mm above the
upper surface of the cap.
KPINA0073EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KPIN1050E01
Aug. 2006 DN
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertisement