RFPA0133 3 TO 5V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER Features

RFPA0133 3 TO 5V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER Features
RFPA0133
3 TO 5V PROGRAMMABLE GAIN HIGH
EFFICIENCY POWER AMPLIFIER




Digitally Controlled Output
Power
380MHz to 960MHz
Frequency Range
High Isolation
Applications






Analog Communication
Systems
900MHz Spread Spectrum
Systems
400MHz Industrial Radios
Driver Stage for Higher Power
Applications
3V to 5V Applications
High Isolation Buffer
NC
VCC1
G16
13
NC 1
12 G8
GND 2
11 NC
RF IN 3
10 RF OUT/VCC2
NC 4
9 RF OUT/VCC2
5
6
7
8
NC

14
NC

0.5W CW Output Power at
3.6V
1W CW Output Power at 5V
32dB Small Signal Gain at
900MHz
>60% Efficiency @ PSAT
15
PD

16
NC
Features
VBIAS
Package Style: QFN, 16-Pin, 3mmx3mm
Functional Block Diagram
Product Description
The RFPA0133 is a 3V to 5V high efficiency programmable gain amplifier
IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process. The device has been designed
to offer saturated efficiency greater than 60% over a range of frequencies
from 380MHz to 960MHz.
Ordering Information
RFPA0133SQ
RFPA0133SR
RFPA0133TR7
RFPA0133PCK-410
RFPA0133PCK-411
GaAs HBT
GaAs MESFET
InGaP HBT
Sample Bag with 25 Pieces
7” Reel with 100 Pieces
7” Reel with 2500 Pieces
860MHz to 930MHz PCBA with 5-piece Sample Bag
430MHz to 470MHz PCBA with 5-piece Sample Bag
Optimum Technology Matching® Applied
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
DS120206
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
1 of 9
RFPA0133
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +5.25
VDC
Power Down Voltage (VPD)
-0.5 to +3.3
V
VBIAS
-0.5 to +3.3
V
DC Supply Current
500
mA
Input RF Power
+10
dBm
Output Load VSWR (See Note)
6:1
Ambient Operating Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Note: Due to high efficiency of this PA, the maximum ICC should always be
less than 400mA. Only under short term poor VSWR conditions is 500mA
acceptable.
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
T=25 °C, VCC =3.6V, VPD =VBIAS =3.0V,
PIN =0dBm, Freq=915MHz
Overall
CW Output Power
27.5
dBm
VCC =3.6V
CW Output Power
30
dBm
VCC =5V
Small Signal Gain
32
dB
PIN =-10dBm
Second Harmonic
23
dBc
Without external second harmonic trap
Third Harmonic
CW Efficiency
45
dBc
55
63
%
0
0.5
Power Down “ON”
Power Down “OFF”
3.0
VPD Input Current
0.8
6
G16=“high”, G8=“high”, PIN =0dBm
V
Voltage supplied to the input
V
Voltage supplied to the input
mA
Only in “ON” state
G16, G8 “ON”
1.7
3.0
V
Voltage supplied to the input
G16, G8 “OFF”
0
0.7
V
Voltage supplied to the input
G16, G8 Input Current
Output Power
1.0
mA
Only in “ON” state
26.5
27.5
29
dBm
G16=“high”, G8=“high”, PIN =0dBm
21
23
25
dBm
G16=“high”, G8=“low”, PIN =0dBm
14
16
18
dBm
G16=“low”, G8=“high”, PIN =0dBm
3
5
8
dBm
G16=“low”, G8=“low”, PIN =0dBm
Turn On/Off Time
200
ns
Power Supply
Power Supply Voltage
3.6
V
Power Supply Current
230
mA
150
mA
G16=“high”, G8=“low”, PIN =0dBm
65
mA
G16=“low”, G8=“high”, PIN =0dBm
35
Idle Current
2 of 9
40
Specifications
G16=“high”, G8=“high”, PIN =0dBm
mA
G16=“low”, G8=“low”, PIN =0dBm
75
110
mA
G16=“high”, G8=“high”, No RF In
60
200
nA
G16=“low”, G8=“low”, PD=“low”. No RF IN.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS120206
RFPA0133
POUT versus PIN
860MHz to 930MHz at 3.6V and +25°C.
Efficiency versus POUT
860MHz to 930MHz at 3.6V and +25°C
70
65
28
60
55
26
50
Output
Power
(dBm)
24
Efficiency
(%)
45
40
35
22
30
RFPA0133_860MHz
RFPA0133_900MHz
RFPA0133_930MHz
20
RFPA0133_860MHz
RFPA0133_900MHz
RFPA0133_930MHz
25
20
18
15
-15
-13
-11
-9
-7
-5
-3
-1
1
3
20
5
21
22
POUT versus PIN
900MHz at 3.6V; -40°C to +85°C
24
25
26
27
28
29
Efficiency versus POUT
900MHz at 3.6V; -40°C to +85°C
29
70
28
65
27
60
26
55
25
50
24
Output
Power
(dBm)
23
Output Power (dBm)
Input Power (dBm)
23
Efficiency
(%)
22
21
45
40
35
20
30
19
18
17
RFPA0133_-40C
RFPA0133_+25C
25
RFPA0133_-40C
EFPA0133_+25C
RFPA0133_+85C
20
16
RFPA0133_+85C
15
20
-15 -14-13 -12-11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5
21
22
23
24
25
26
27
28
29
Output Power (dBm)
Input Power (dBm)
PSAT versus VCC
900 MHz PIN=0 dBm
Saturated Efficiency versus VCC
900 MHz PIN=0 dBm
66
31
30
65
29
64
28
Efficiency
(%)
POUT (dBm)
27
63
62
26
61
25
24
60
2.5
3.0
3.5
4.0
VCC
DS120206
4.5
5.0
2.5
3.0
3.5
4.0
4.5
5.0
VCC
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
3 of 9
RFPA0133
Thermal Resistance versus Output Power
Thermal Resistance versus Current
150
140
140
120
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
130
110
100
90
80
70
60
50
40
30
3.6V
20
5.0V
130
3.6V
120
5.0V
110
100
90
80
70
60
50
10
0
40
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
Power (dBm)
75
100
125
150
175
200
225
250
275
300
325
350
Current (mA)
Maximum Die Temperature versus
Output Power
160
Die Temperature (°C )
150
140
130
120
110
100
3V
90
5V
80
0
5
10
15
20
25
30
Output Power (dBm)
NOTE: Thermal resistance and die temperature are measured at a PCB temperature of 85C on a standard 900MHz evaluation board.
4 of 9
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS120206
RFPA0133
Pin
1,4,5,
7,8,
11, 15
2
Function
NC
3
RF IN
6
VPD
9,10
RF
OUT/VCC2
12
G8
13
G16
14
16
VCC1
VBIAS
GND
Description
These pins may be left unconnected or soldered to ground.
Ground connection. Keep traces physically short and connect immediately to the ground plane for best performance.
Amplifier RF input. The amplifier does not contain internal DC blocking and, therefore, should be externally DC
blocked before connecting to any device which has DC present or which contains a DC path to ground.
Power down control voltage. When this pin is at 0V, the device will be in power down mode, dissipating minimum
DC power. When this pin is at 3V the device will be in full power mode delivering maximum gain and output
power capability. This pin should not, in any circumstance, be higher than 3.3V. This pin should also have an
external UHF and HF bypassing capacitor. Typically VBIAS =VPD =3.0V.
Amplifier RF output. This is an unmatched collector output of the final amplifier transistor. Bias for the final
power amplifier output transistor must also be provided through one of these pins. Pins 9 and 10 should be
used for the RF output with a matching network that presents the optimum load impedance to the PA for maximum power and efficiency, as well as providing DC blocking at the output.
RF output power gain control 8dB bit (see specification table for logic). The control voltage at this pin should
never exceed 3.3V and a logic high should be at least 1.7V. This pin should also have an external UHF bypassing
capacitor. See note.
RF output power gain control 16dB bit (see specification table for logic). The control voltage at this pin should
never exceed 3.3V and a logic high should be at least 1.7V. This pin should also have an external UHF bypassing
capacitor. See note.
Positive supply for the first stage (driver) amplifier. This is an unmatched transistor collector output.
Positive supply for the bias circuits. This pin should be bypassed with a single UHF capacitor, placed as close as
possible to the package. Typically, VBIAS =VPD =3.0V.
Note: The 8dB and 16dB gain steps are approximate for small signal operation. As the device compresses, the values of the
gain steps compress as well. The output power table on page two shows the effect of the gain steps for saturated (0dBm input)
operation.
DS120206
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
5 of 9
RFPA0133
Evaluation Board Schematic
860MHz to 930MHz
R2
(See Table Below)
C13
2.2 F
VBIAS
C14
2.2 F
C5
100 pF
C4
100 pF
L4
2.7 nH
Toko
VCC1
G16
R1
DNP
C7
100 pF
16
C1
100 pF
L1
4.7 nH
Toko
RF IN
C15
DNP
15
12
2
11
3
10
4
9
5.0
4.5
4.0
<3.6
10
3.9
Note: R2 values are approximate.
The resistor values may be
changed by ±1 standard value for
convenience.
6 of 9
C8
100 pF
G8
5
R2 ()
30
20
13
1
6
All components are 0402
unless specified otherwise.
VCC1/VCC2 (Volts)
14
7
8
L3
3.3 nH
Coilcraft
C6
DNP
L2
10 nH
Coilcraft 0603
C2
100 pF
C10
5.6 pF
Johanson
RF OUT
C16
DNP
C11
100 pF
C3
100 pF
C12
DNP
C9
2.2 F
RFPA0133410(B)
865 – 930 MHz
VPD
C17
2.2 F
RF OUT/VCC2
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS120206
RFPA0133
Evaluation Board Schematic
430MHz to 470MHz
R2
(See Table Below)
C13
2.2 F
VBIAS
C14
2.2 F
VCC1
G16
C5
33 pF
L4
10 nH
Toko
C4
100 pF
R1
DNP
C7
100 pF
16
C1
100 pF
L1
18 nH
Toko
RF IN
C15
220 
R2 ()
30
20
10
<3.6
3.9
Note: R2 values are approximate.
The resistor values may be
changed by ±1 standard value for
convenience.
13
12
2
11
3
10
4
9
C8
100 pF
G8
6
7
8
L3
10.4 nH
Coilcraft 0604
C6
DNP
L2
18 nH
Coilcraft 0603
C2
100 pF
C10
9.1 pF
Johanson
RF OUT
C16
DNP
C11
100 pF
C3
100 pF
C12
DNP
C9
2.2 F
RFPA0133
430 MHz
VPD
DS120206
14
1
5
VCC1/VCC2 (Volts)
5.0
4.5
4.0
15
C17
2.2 F
RF OUT/VCC2
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
7 of 9
RFPA0133
Evaluation Board Layout
8 of 9
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS120206
RFPA0133
Package Drawing
Branding Diagram
DS120206
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
9 of 9
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertisement