MX29LV160D T/B DATASHEET 1 P/N:PM1315

MX29LV160D T/B DATASHEET 1 P/N:PM1315
MX29LV160D T/B
MX29LV160D T/B
DATASHEET
P/N:PM1315
REV. 1.2, DEC. 22, 2011
1
MX29LV160D T/B
Contents
FEATURES.............................................................................................................................................................. 5
GENERAL DESCRIPTION...................................................................................................................................... 6
PIN CONFIGURATIONS.......................................................................................................................................... 7
PIN DESCRIPTION.................................................................................................................................................. 9
BLOCK DIAGRAM................................................................................................................................................. 10
BLOCK DIAGRAM DESCRIPTION....................................................................................................................... 11
BLOCK STRUCTURE............................................................................................................................................ 12
Table 1-1. MX29LV160DT SECTOR ARCHITECTURE............................................................................... 12
Table 1-2. MX29LV160DB SECTOR ARCHITECTURE .............................................................................. 13
BUS OPERATION.................................................................................................................................................. 14
Table 2-1. BUS OPERATION....................................................................................................................... 14
Table 2-2. BUS OPERATION....................................................................................................................... 15
FUNCTIONAL OPERATION DESCRIPTION........................................................................................................ 16
WRITE COMMANDS/COMMAND SEQUENCES........................................................................................ 16
REQUIREMENTS FOR READING ARRAY DATA........................................................................................ 16
RESET# OPERATION................................................................................................................................. 17
SECTOR PROTECT OPERATION.............................................................................................................. 17
CHIP UNPROTECT OPERATION............................................................................................................... 17
HARDWARE WRITE PROTECT.................................................................................................................. 17
ACCELERATED PROGRAMMING OPERATION ....................................................................................... 17
TEMPORARY SECTOR UNPROTECT OPERATION................................................................................. 18
AUTOMATIC SELECT OPERATION............................................................................................................ 18
VERIFY SECTOR PROTECT STATUS OPERATION.................................................................................. 18
DATA PROTECTION.................................................................................................................................... 18
LOW VCC WRITE INHIBIT.......................................................................................................................... 18
WRITE PULSE "GLITCH" PROTECTION.................................................................................................... 18
LOGICAL INHIBIT........................................................................................................................................ 19
POWER-UP SEQUENCE............................................................................................................................ 19
POWER-UP WRITE INHIBIT....................................................................................................................... 19
POWER SUPPLY DECOUPLING................................................................................................................ 19
COMMAND OPERATIONS.................................................................................................................................... 20
TABLE 3. MX29LV160D T/B COMMAND DEFINITIONS............................................................................. 20
AUTOMATIC PROGRAMMING OF THE MEMORY ARRAY....................................................................... 21
ERASING THE MEMORY ARRAY............................................................................................................... 21
SECTOR ERASE......................................................................................................................................... 22
CHIP ERASE............................................................................................................................................... 23
SECTOR ERASE SUSPEND....................................................................................................................... 23
SECTOR ERASE RESUME......................................................................................................................... 24
AUTOMATIC SELECT OPERATIONS......................................................................................................... 24
AUTOMATIC SELECT COMMAND SEQUENCE........................................................................................ 24
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MX29LV160D T/B
READ MANUFACTURER ID OR DEVICE ID.............................................................................................. 25
VERIFY SECTOR GROUP PROTECTION.................................................................................................. 25
RESET ........................................................................................................................................................ 25
COMMON FLASH MEMORY INTERFACE (CFI) MODE...................................................................................... 26
QUERY COMMAND AND COMMON FLASH INTERFACE (CFI) MODE.................................................... 26
Table 4-1. CFI mode: Identification Data Values.......................................................................................... 26
Table 4-2. CFI Mode: System Interface Data Values................................................................................... 26
Table 4-3. CFI Mode: Device Geometry Data Values................................................................................... 27
Table 4-4. CFI Mode: Primary Vendor-Specific Extended Query Data Values............................................. 28
ELECTRICAL CHARACTERISTICS..................................................................................................................... 29
ABSOLUTE MAXIMUM STRESS RATINGS................................................................................................ 29
OPERATING TEMPERATURE AND VOLTAGE........................................................................................... 29
DC CHARACTERISTICS............................................................................................................................. 30
SWITCHING TEST CIRCUIT....................................................................................................................... 31
SWITCHING TEST WAVEFORM................................................................................................................ 31
AC CHARACTERISTICS............................................................................................................................. 32
WRITE COMMAND OPERATION.......................................................................................................................... 33
Figure 1. COMMAND WRITE OPERATION................................................................................................. 33
READ/RESET OPERATION.................................................................................................................................. 34
Figure 2. READ TIMING WAVEFORM......................................................................................................... 34
Figure 3. RESET# TIMING WAVEFORM.................................................................................................... 35
ERASE/PROGRAM OPERATION......................................................................................................................... 36
Figure 4. AUTOMATIC CHIP ERASE TIMING WAVEFORM....................................................................... 36
Figure 5. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART............................................................. 37
Figure 6. AUTOMATIC SECTOR ERASE TIMING WAVEFORM................................................................. 38
Figure 7. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART..................................................... 39
Figure 8. ERASE SUSPEND/RESUME FLOWCHART............................................................................... 40
Figure 9. AUTOMATIC PROGRAM TIMING WAVEFORM........................................................................... 41
Figure 10. ACCELERATED PROGRAM TIMING DIAGRAM...................................................................... 41
Figure 11. CE# CONTROLLED WRITE TIMING WAVEFORM.................................................................... 42
Figure 12. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART..................................................... 43
SECTOR PROTECT/CHIP UNPROTECT............................................................................................................. 44
Figure 13. SECTOR PROTECT/CHIP UNPROTECT WAVEFORM (RESET# Control).............................. 44
Figure 14. IN-SYSTEM SECTOR PROTECT WITH RESET#=Vhv............................................................. 45
Figure 15. CHIP UNPROTECT ALGORITHMS WITH RESET#=Vhv.......................................................... 46
Table 5. TEMPORARY SECTOR UNPROTECT.......................................................................................... 47
Figure 16. TEMPORARY SECTOR UNPROTECT WAVEFORM................................................................ 47
Figure 17. TEMPORARY SECTOR UNPROTECT FLOWCHART............................................................... 48
Figure 18. SILICON ID READ TIMING WAVEFORM................................................................................... 49
WRITE OPERATION STATUS............................................................................................................................... 50
Figure 19. DATA# POLLING TIMING WAVEFORM (DURING AUTOMATIC ALGORITHM)........................ 50
Figure 20. DATA# POLLING ALGORITHM.................................................................................................. 51
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MX29LV160D T/B
Figure 21. TOGGLE BIT TIMING WAVEFORM (DURING AUTOMATIC ALGORITHM)............................. 52
Figure 22. TOGGLE BIT ALGORITHM........................................................................................................ 53
Figure 23. BYTE# TIMING WAVEFORM FOR READ OPERATIONS (BYTE# switching from byte mode to
word mode).................................................................................................................................................. 54
RECOMMENDED OPERATING CONDITIONS..................................................................................................... 55
ERASE AND PROGRAMMING PERFORMANCE................................................................................................ 56
DATA RETENTION................................................................................................................................................ 56
LATCH-UP CHARACTERISTICS.......................................................................................................................... 56
ORDERING INFORMATION.................................................................................................................................. 57
PART NAME DESCRIPTION................................................................................................................................. 58
PACKAGE INFORMATION.................................................................................................................................... 59
REVISION HISTORY ............................................................................................................................................ 65
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REV. 1.2, DEC. 22, 2011
4
MX29LV160D T/B
16M-BIT [2M x 8 / 1M x 16] 3V SUPPLY FLASH MEMORY
FEATURES
GENERAL FEATURES
• Byte/Word mode switchable
- 2,097,152 x8 / 1,048,576 x16
• Sector Structure
- 16K-Byte x 1, 8K-Byte x 2, 32K-Byte x 1, 64K-Byte x 31
- Provides sector protect function to prevent program or erase operation in the protected sector
- Provides chip unprotect function to allow code changing
- Provides temporary sector unprotect function for code changing in previously protected sector
• Power Supply Operation
- Vcc 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to 1.5 x Vcc
• Low Vcc write inhibit : Vcc ≤ Vlko
• Compatible with JEDEC standard
- Pinout and software compatible to single power supply Flash
• Functional compatible with MX29LV160C device
PERFORMANCE
• High Performance
- Fast access time: 70ns
- Word program time: 11us/word (typical)
- Fast erase time: 0.7s/sector, 15s/chip (typical)
• Low Power Consumption
- Low active read current: 5mA (typical) at 5MHz
- Low standby current: 5uA (typical)
• Typical 100,000 erase/program cycle
• 20 years data retention
SOFTWARE FEATURES
• Erase Suspend/ Erase Resume
- Suspends sector erase operation to read data from or program data to another sector which is not being
erased
• Status Reply
- Data# Polling & Toggle bits provide detection of program and erase operation completion
• Support Common Flash Interface (CFI)
HARDWARE FEATURES
• Ready/Busy# (RY/BY#) Output
- Provides a hardware method of detecting program and erase operation completion
• Hardware Reset (RESET#) Input
- Provides a hardware method to reset the internal state machine to read mode
• WP#/ACC
- Provide accelerated program capability
PACKAGE
• 48-Pin TSOP
• 48-Ball CSP (TFBGA)
• 48-Ball WFBGA/XFLGA
• All devices are RoHS Compliant
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REV. 1.2, DEC. 22, 2011
5
MX29LV160D T/B
GENERAL DESCRIPTION
MX29LV160DT/B is a 16Mbit flash memory that can be organized as 2Mbytes of 8 bits each or as 1Mwords of 16
bits each. These devices operate over a voltage range of 2.7V to 3.6V typically using a 3V power supply input.
The memory array is divided into 32 equal 64 Kilo byte blocks. However, depending on the device being used as
a Top-Boot or Bottom-Boot device. The outermost one sector at the top or at the bottom are respectively the boot
blocks for this device.
The MX29LV160DT/B is offered in a 48-pin TSOP, 48-ball XFLGA/WFBGA and a 48-ball CSP(TFBGA) JEDEC
standard package. These packages are offered in leaded, as well as lead-free versions that are compliant to the
RoHS specifications. The software algorithm used for this device also adheres to the JEDEC standard for single
power supply devices. These flash parts can be programmed in system or on commercially available EPROM/
Flash programmers.
Separate OE# and CE# (Output Enable and Chip Enable) signals are provided to simplify system design. When
used with high speed processors, the 70ns read access time of this flash memory permits operation with minimal
time lost due to system timing delays.
The automatic write algorithm provided on Macronix flash memories perform an automatic erase prior to write.
The user only needs to provide a write command to the command register. The on-chip state machine automatically controls the program and erase functions including all necessary internal timings. Since erase and write
operations take much longer time than read operations, erase/write can be interrupted to perform read operations in other sectors of the device. For this, Erase Suspend operation along with Erase Resume operation are
provided. Data# polling or Toggle bits are used to indicate the end of the erase/write operation.
These devices are manufactured at the Macronix fabrication facility using the time tested and proven Macronix's
advance technology. This proprietary non-epi process provides a very high degree of latch-up protection for
stresses up to 100 milliamperes on address and data pins from -1V to 1.5xVCC.
With low power consumption and enhanced hardware and software features, this flash memory retains data reliably for at least twenty years. Erase and programming functions have been tested to meet a typical specification
of 100,000 cycles of operation.
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REV. 1.2, DEC. 22, 2011
6
MX29LV160D T/B
PIN CONFIGURATIONS
48 TSOP (Standard Type) (12mm x 20mm)
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE#
RESET#
NC
WP#/ACC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
A16
BYTE#
GND
Q15/A-1
Q7
Q14
Q6
Q13
Q5
Q12
Q4
VCC
Q11
Q3
Q10
Q2
Q9
Q1
Q8
Q0
OE#
GND
CE#
A0
48-Ball CSP(TFBGA/LFBGA) (Ball Pitch = 0.8 mm, Top View, Balls Facing Down, 6 x 8 mm)
BYTE#
Q15/
A-1
GND
Q7
Q14
Q13
Q6
A19
Q5
Q12
VCC
Q4
6
A13
A12
A14
A15
A16
5
A9
A8
A10
A11
4
WE#
RESET#
NC
3
RY/
BY#
WP#/
ACC
A18
NC
Q2
Q10
Q11
Q3
2
A7
A17
A6
A5
Q0
Q8
Q9
Q1
1
A3
A4
A2
A1
A0
CE#
OE#
GND
A
B
C
D
E
F
G
H
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MX29LV160D T/B
48-Ball WFBGA (Balls Facing Down, 4 x 6 x 0.75 mm)
RESET#
A9
NC
A10
A13
A14
A18
A8
A12
A15
Q8
Q10
Q4
Q11
A16
OE#
Q9
A19
BYTE#
Q5
Q6
Q7
Q0
Q1
Q2
Q3
VCC
Q12
Q13
Q14
Q15/
A-1
GND
B
C
D
E
F
G
H
J
6
A2
A4
A6
A17
5
A1
A3
A7
WP#/
ACC
4
A0
A5
3
CE#
2
GND
1
A
NC
NC
WE#
A11
K
L
48-Ball XFLGA (Balls Facing Down, 4 x 6 x 0.5 mm)
RESET#
A9
NC
A10
A13
A14
A18
A8
A12
A15
Q8
Q10
Q4
Q11
A16
OE#
Q9
A19
BYTE#
Q5
Q6
Q7
Q0
Q1
Q2
Q3
VCC
Q12
Q13
Q14
Q15/
A-1
GND
B
C
D
E
F
G
H
J
6
A2
A4
A6
A17
5
A1
A3
A7
WP#/
ACC
4
A0
A5
3
CE#
2
GND
1
A
NC
NC
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WE#
A11
K
L
REV. 1.2, DEC. 22, 2011
8
MX29LV160D T/B
PIN DESCRIPTION
LOGIC SYMBOL
Vcc
SYMBOL
A0~A19
Q0~Q14
Q15/A-1
CE#
WE#
BYTE#
PIN NAME
Address Input
Data Input/Output
Q15(Word mode)/LSB addr(Byte mode)
Chip Enable Input
Write Enable Input
Word/Byte Selection input
Hardware Reset Pin/Sector Protect
RESET#
Unlock
OE#
Output Enable Input
RY/BY# Ready/Busy Output
VCC
Power Supply Pin (2.7V~3.6V)
GND
Ground Pin
WP#/ACC Hardware write Protect/Acceleration Pin
NC
Pin Not Connected Internally
20
A0-A19
Q0-Q15
(A-1)
16 or 8
CE#
OE#
WE#
RESET#
RY/BY#
WP#/ACC
BYTE#
GND
Note: If customer does not need WP#/ACC feature
please connect WP#/ACC pin to VCC or let it floating.
The WP#/ACC has an internal pull-up when
unconnected WP#/ACC is at Vih.
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REV. 1.2, DEC. 22, 2011
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MX29LV160D T/B
BLOCK DIAGRAM
CE#
OE#
WE#
RESET#
BYTE#
WP#/ACC
CONTROL
INPUT
LOGIC
PROGRAM/ERASE
STATE
HIGH VOLTAGE
MACHINE
(WSM)
LATCH
BUFFER
Y-DECODER
AND
STATE
X-DECODER
ADDRESS
A0-AM
WRITE
FLASH
REGISTER
ARRAY
ARRAY
Y-PASS GATE
SOURCE
HV
COMMAND
DATA
DECODER
SENSE
AMPLIFIER
PGM
DATA
HV
COMMAND
DATA LATCH
PROGRAM
DATA LATCH
Q0-Q15/A-1
I/O BUFFER
AM: MSB address
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REV. 1.2, DEC. 22, 2011
10
MX29LV160D T/B
BLOCK DIAGRAM DESCRIPTION
The block diagram on Page 10 illustrates a simplified architecture of MX29LV160D T/B. Each block in the block
diagram represents one or more circuit modules in the real chip used to access, erase, program, and read the
memory array..
The "CONTROL INPUT LOGIC" block receives input pins CE#, OE#, WE#, RESET#, BYTE# and WP#/ACC.
It creates internal timing control signals according to the input pins and outputs to the "ADDRESS LATCH AND
BUFFER" to latch the external address pins A0-AM(A19). The internal addresses are output from this block to the
main array and decoders composed of "X-DECODER", "Y-DECODER", "Y-PASS GATE", and "FLASH ARRAY".
The X-DECODER decodes the word-lines of the flash array, while the Y-DECODER decodes the bit-lines of the
flash array. The bit lines are electrically connected to the "SENSE AMPLIFIER" and "PGM DATA HV" selectively
through the y-pass gates. Sense amplifiers are used to read out the contents of the flash memory, while the
"PGM DATA HV" block is used to selectively deliver high power to bit-lines during programming. The "I/O
BUFFER" controls the input and output on the Q0-Q15/A-1 pads. During read operation, the I/O buffer receives
data from sense amplifiers and drives the output pads accordingly. In the last cycle of program command, the I/O
buffer transmits the data on Q0-Q15/A-1 to "PROGRAM DATA LATCH", which controls the high power drivers in
"PGM DATA HV" to selectively program the bits in a word or byte according to the user input pattern.
The "PROGRAM/ERASE HIGH VOLTAGE" block comprises the circuits to generate and deliver the necessary
high voltage to the X-DECODER flash array, and "PGM DATA HV" block. The logic control module comprises of
the "WRITE STATE MACHINE(WSM)", "STATE REGISTER", "COMMAND DATA DECODER", and "COMMAND
DATA LATCH". When the user issues a command by toggling WE#, the command on Q0-A15/A-1 is latched
in the command data latch and is decoded by the command data decoder. The state register receives the
command and records the current state of the device. The WSM implements the internal algorithms for program
or erase according to the current command state by controlling each block in the block diagram.
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REV. 1.2, DEC. 22, 2011
11
MX29LV160D T/B
BLOCK STRUCTURE
The main flash memory array can be organized as 2M Bytes x 8 or as 1M Words x 16. The details of the address ranges and the corresponding sector addresses are shown in Table 1. Table 1.a shows the sector architecture for the Top Boot part, whereas Table 1.b shows the sector architecture for the Bottom Boot part. The specific security sector addresses are shown at the bottom off each of these tables.
Table 1-1. MX29LV160DT SECTOR ARCHITECTURE
Sector Size
Byte Mode Word Mode
(Kbytes)
(Kwords)
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
32
16
8
4
8
4
16
8
Address Range
Sector
Sector Address
A19-A12
Byte Mode (x8)
Word Mode (x16)
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
00000xxx
00001xxx
00010xxx
00011xxx
00100xxx
00101xxx
00110xxx
00111xxx
01000xxx
01001xxx
01010xxx
01011xxx
01100xxx
01101xxx
01110xxx
01111xxx
10000xxx
10001xxx
10010xxx
10011xxx
10100xxx
10101xxx
10110xxx
10111xxx
11000xxx
11001xxx
11010xxx
11011xxx
11100xxx
11101xxx
11110xxx
111110xx
11111100
11111101
1111111x
000000h-00FFFFh
010000h-01FFFFh
020000h-02FFFFh
030000h-03FFFFh
040000h-04FFFFh
050000h-05FFFFh
060000h-06FFFFh
070000h-07FFFFh
080000h-08FFFFh
090000h-09FFFFh
0A0000h-0AFFFFh
0B0000h-0BFFFFh
0C0000h-0CFFFFh
0D0000h-0DFFFFh
0E0000h-0EFFFFh
0F0000h-0FFFFFh
100000h-10FFFFh
110000h-11FFFFh
120000h-12FFFFh
130000h-13FFFFh
140000h-14FFFFh
150000h-15FFFFh
160000h-16FFFFh
170000h-17FFFFh
180000h-18FFFFh
190000h-19FFFFh
1A0000h-1AFFFFh
1B0000h-1BFFFFh
1C0000h-1CFFFFh
1D0000h-1DFFFFh
1E0000h-1EFFFFh
1F0000h-1F7FFFh
1F8000h-1F9FFFh
1FA000h-1FBFFFh
1FC000h-1FFFFFh
000000h-07FFFh
008000h-0FFFFh
010000h-17FFFh
018000h-01FFFFh
020000h-027FFFh
028000h-02FFFFh
030000h-037FFFh
038000h-03FFFFh
040000h-047FFFh
048000h-04FFFFh
050000h-057FFFh
058000h-05FFFFh
060000h-067FFFh
068000h-06FFFFh
070000h-077FFFh
078000h-07FFFFh
080000h-087FFFh
088000h-08FFFFh
090000h-097FFFh
098000h-09FFFFh
0A0000h-0A7FFFh
0A8000h-0AFFFFh
0B0000h-0B7FFFh
0B8000h-0BFFFFh
0C0000h-0C7FFFh
0C8000h-0CFFFFh
0D0000h-0D7FFFh
0D8000h-0DFFFFh
0E0000h-0E7FFFh
0E8000h-0EFFFFh
0F0000h-0F7FFFh
0F8000h-0FBFFFh
0FC000h-0FCFFFh
0FD000h-0FDFFFh
0FE000h-0FFFFFh
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12
MX29LV160D T/B
Table 1-2. MX29LV160DB SECTOR ARCHITECTURE
Sector Size
Byte Mode Word Mode
(Kbytes)
(Kwords)
16
8
8
4
8
4
32
16
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
64
32
Address Range
Sector
Sector Address
A19-A12
Byte Mode (x8)
Word Mode (x16)
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
0000000x
00000010
00000011
000001xx
00001xxx
00010xxx
00011xxx
00100xxx
00101xxx
00110xxx
00111xxx
01000xxx
01001xxx
01010xxx
01011xxx
01100xxx
01101xxx
01110xxx
01111xxx
10000xxx
10001xxx
10010xxx
10011xxx
10100xxx
10101xxx
10110xxx
10111xxx
11000xxx
11001xxx
11010xxx
11011xxx
11100xxx
11101xxx
11110xxx
11111xxx
000000h-003FFFh
004000h-005FFFh
006000h-007FFFh
008000h-00FFFFh
010000h-01FFFFh
020000h-02FFFFh
030000h-03FFFFh
040000h-04FFFFh
050000h-05FFFFh
060000h-06FFFFh
070000h-07FFFFh
080000h-08FFFFh
090000h-09FFFFh
0A0000h-0AFFFFh
0B0000h-0BFFFFh
0C0000h-0CFFFFh
0D0000h-0DFFFFh
0E0000h-0EFFFFh
0F0000h-0FFFFFh
100000h-10FFFFh
110000h-11FFFFh
120000h-12FFFFh
130000h-13FFFFh
140000h-14FFFFh
150000h-15FFFFh
160000h-16FFFFh
170000h-17FFFFh
180000h-18FFFFh
190000h-19FFFFh
1A0000h-1AFFFFh
1B0000h-1BFFFFh
1C0000h-1CFFFFh
1D0000h-1DFFFFh
1E0000h-1EFFFFh
1F0000h-1FFFFFh
000000h-001FFFh
002000h-002FFFh
003000h-003FFFh
004000h-007FFFh
008000h-00FFFFh
010000h-017FFFh
018000h-01FFFFh
020000h-027FFFh
028000h-02FFFFh
030000h-037FFFh
038000h-03FFFFh
040000h-047FFFh
048000h-04FFFFh
050000h-057FFFh
058000h-05FFFFh
060000h-067FFFh
068000h-06FFFFh
070000h-077FFFh
078000h-07FFFFh
080000h-087FFFh
088000h-08FFFFh
090000h-097FFFh
098000h-09FFFFh
0A0000h-0A7FFFh
0A8000h-0AFFFFh
0B0000h-0B7FFFh
0B8000h-0BFFFFh
0C0000h-0C7FFFh
0C8000h-0CFFFFh
0D0000h-0D7FFFh
0D8000h-0DFFFFh
0E0000h-0E7FFFh
0E8000h-0EFFFFh
0F0000h-0F7FFFh
0F8000h-0FFFFFh
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MX29LV160D T/B
BUS OPERATION
Table 2-1. BUS OPERATION
RESET#
CE#
WE#
OE#
Address
Data
I/O
Q7~Q0
L
Vcc ±
0.3V
H
X
Vcc±
0.3V
L
X
X
X
HighZ
Byte#
Vil
Vih
Data (I/O)
Q15~Q8
HighZ
HighZ
X
X
X
HighZ
HighZ
HighZ
H
H
H
X
HighZ
HighZ
HighZ
L/H
Read Mode
H
L
H
L
AIN
DOUT
DOUT
L/H
Write
H
L
L
H
AIN
DIN
DIN
Note3
Accelerate Program
DIN
Vhv
HighZ
DIN
Note3
Mode Select
Device Reset
Standby Mode
Output Disable
Q8-Q14=
HighZ,
Q15=A-1
WP#/
ACC
L/H
H
L
L
H
AIN
DIN
Temporary Sector
Unprotect
Vhv
X
X
X
AIN
DIN
Sector Protect
(Note2)
Vhv
L
L
H
Sector Address,
DIN,
A6=L, A1=H, A0=L DOUT
X
X
L/H
Chip Unprotect
(Note2)
Vhv
L
L
H
Sector Address,
DIN,
A6=H, A1=H, A0=L DOUT
X
X
Note3
Notes:
1. All sectors will be unprotected if WP#/ACC=Vhv.
2.The one outmost boot sector is protected if WP#/ACC=Vil.
3.When WP#/ACC = Vih, the protection conditions of the one outmost boot sector depend on previous protection
conditions."Sector/Sector Block Protection and Unprotection" describes the protect and unprotect method.
4.Q0~Q15 are input (DIN) or output (DOUT) pins according to the requests of command sequence, sector
protection, or data polling algorithm.
5.In Word Mode (Byte#=Vih), the addresses are AM to A0.
In Byte Mode (Byte#=Vil), the addresses are AM to A-1 (Q15).
6.AM: MSB of address.
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MX29LV160D T/B
Table 2-2. BUS OPERATION
Item
Control Input
AM A11
to
to A9
A12 A10
A8
to
A7
A6
A5
to
A2
A1
A0
Q7 ~ Q0
Q15 ~ Q8
CE#
WE#
OE#
Sector Lock Status
Verification
L
H
L
SA
x
Vhv
x
L
x
H
L
01h or 00h
(Note 1)
x
Read Silicon ID
Manufacturer
Code
L
H
L
x
x
Vhv
x
L
x
L
L
C2h
x
Read Silicon ID
MX29LV160DT
L
H
L
x
x
Vhv
x
L
x
L
H
C4h
Read Silicon ID
MX29LV160DB
L
H
L
x
x
Vhv
x
L
x
L
H
49h
22h(Word)
x (Byte)
22h(Word)
x (Byte)
Notes:
1. Sector unprotected code:00h. Sector protected code:01h.
2. AM: MSB of address.
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MX29LV160D T/B
FUNCTIONAL OPERATION DESCRIPTION
WRITE COMMANDS/COMMAND SEQUENCES
To write a command to the device, system must drive WE# and CE# to Vil, and OE# to Vih. In a command cycle,
all address are latched at the later falling edge of CE# and WE#, and all data are latched at the earlier rising
edge of CE# and WE#.
Figure 1 illustrates the AC timing waveform of a write command, and Table 3 defines all the valid command sets
of the device. System is not allowed to write invalid commands not defined in this datasheet. Writing an invalid
command will bring the device to an undefined state.
REQUIREMENTS FOR READING ARRAY DATA
Read array action is to read the data stored in the array. While the memory device is in powered up or has been
reset, it will automatically enter the status of read array. If the microprocessor wants to read the data stored in
array, it has to drive CE# (device enable control pin) and OE# (Output control pin) as Vil, and input the address
of the data to be read into address pin at the same time. After a period of read cycle (Tce or Taa), the data being
read out will be displayed on output pin for microprocessor to access. If CE# or OE# is Vih, the output will be in
tri-state, and there will be no data displayed on output pin at all.
After the memory device completes embedded operation (automatic Erase or Program), it will automatically return to the status of read array, and the device can read the data in any address in the array. In the process of
erasing, if the device receives the Erase suspend command, erase operation will be stopped temporarily after a
period of time no more than Tready1 and the device will return to the status of read array. At this time, the device
can read the data stored in any address except the sector being erased in the array. In the status of erase suspend, if user wants to read the data in the sectors being erased, the device will output status data onto the output. Similarly, if program command is issued after erase suspend, after program operation is completed, system
can still read array data in any address except the sectors to be erased
The device needs to issue reset command to enable read array operation again in order to arbitrarily read the
data in the array in the following two situations:
1. In program or erase operation, the programming or erasing failure causes Q5 to go high.
2. The device is in auto select mode or CFI mode.
In the two situations above, if reset command is not issued, the device is not in read array mode and system
must issue reset command before reading array data.
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MX29LV160D T/B
RESET# OPERATION
Driving RESET# pin low for a period more than Trp will reset the device back to read mode. If the device is in
program or erase operation, the reset operation will take at most a period of Tready1 for the device to return to
read array mode. Before the device returns to read array mode, the RY/BY# pin remains low (busy status).
When RESET# pin is held at GND±0.3V, the device consumes standby current(Isb).However, device draws larger current if RESET# pin is held at Vil but not within GND±0.3V.
It is recommended that the system to tie its reset signal to RESET# pin of flash memory, so that the flash memory will be reset during system reset and allows system to read boot code from flash memory.
SECTOR PROTECT OPERATION
When a sector is protected, program or erase operation will be disabled on that protected sector. MX29LV160D
T/B provides two methods for sector protection.
Once the sector is protected, the sector remains protected until next chip unprotect, or is temporarily unprotected
by asserting RESET# pin at Vhv. Refer to temporary sector unprotect operation for further details.
The first method is by applying Vhv on RESET# pin. Refer to Figure 12 for timing diagram and Figure 13 for the
algorithm for this method.
The other method is asserting Vhv on A9 and OE# pins, with A6 and CE# at Vil. The protection operation begins
at the falling edge of WE# and terminates at the rising edge. Contact Macronix for details.
CHIP UNPROTECT OPERATION
MX29LV160D T/B provides two methods for chip unprotect. The chip unprotect operation unprotects all sectors
within the device. It is recommended to protect all sectors before activating chip unprotect mode. All sectors are
unprotected when shipped from the factory.
The first method is by applying Vhv on RESET# pin. Refer to Figure 12 for timing diagram and Figure 14 for algorithm of the operation.
The other method is asserting Vhv on A9 and OE# pins, with A6 at Vih and CE# at Vil. The unprotect operation
begins at the falling edge of WE# and terminates at the rising edge. Contact Macronix for details.
HARDWARE WRITE PROTECT
By driving the WP#/ACC pin LOW, the outermost one boot sector is protected from all erase/program operations.
If WP#/ACC is held HIGH (Vih to VCC), the one outermost sector revert to its previously protected/unprotected
status.
ACCELERATED PROGRAMMING OPERATION
By applying high voltage (Vhv) to the WP#/ACC pin, the device will enter the Accelerated Programming mode.
This mode permits the system to skip the normal command unlock sequences and program byte/word locations
directly. During accelerated programming, the current drawn from the WP#/ACC pin is no more than ICP1.
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MX29LV160D T/B
TEMPORARY SECTOR UNPROTECT OPERATION
System can apply RESET# pin at Vhv to place the device in temporary unprotect mode. In this mode, previously
protected sectors can be programmed or erased just as it is unprotected. The devices returns to normal operation once Vhv is removed from RESET# pin and previously protected sectors are again protected.
AUTOMATIC SELECT OPERATION
When the device is in Read array mode, erase-suspended read array mode or CFI mode, user can issue read
silicon ID command to enter read silicon ID mode. After entering read silicon ID mode, user can query several
silicon IDs continuously and does not need to issue read silicon ID mode again. When A0 is Low, device will output Macronix Manufacture ID C2. When A0 is high, device will output Device ID. In read silicon ID mode, issuing
reset command will reset device back to read array mode or erase-suspended read array mode.
Another way to enter read silicon ID is to apply high voltage on A9 pin with CE#, OE#, A6 and A1 at Vil. While
the high voltage of A9 pin is discharged, device will automatically leave read silicon ID mode and go back to read
array mode or erase-suspended read array mode. When A0 is Low, device will output Macronix Manufacture ID
C2. When A0 is high, device will output Device ID.
VERIFY SECTOR PROTECT STATUS OPERATION
MX29LV160D T/B provides hardware sector protection against Program and Erase operation for protected sectors. The sector protect status can be read through Sector Protect Verify command. This method requires Vhv on
A9 pin, Vih on WE# and A1 pins, Vil on CE#, OE#, A6 and A0 pins, and sector address on A12 to Am pins. If the
read out data is 01h, the designated sector is protected. Oppositely, if the read out data is 00h, the designated
sector is not protected.
DATA PROTECTION
To avoid accidental erasure or programming of the device, the device is automatically reset to read array mode
during power up. Besides, only after successful completion of the specified command sets will the device begin
its erase or program operation.
Other features to protect the data from accidental alternation are described as followed.
LOW VCC WRITE INHIBIT
The device refuses to accept any write command when Vcc is less than Vlko. This prevents data from spuriously
altered. The device automatically resets itself when Vcc is lower than Vlko and write cycles are ignored until Vcc
is greater than Vlko. System must provide proper signals on control pins after Vcc is larger than Vlko to avoid unintentional program or erase operation
WRITE PULSE "GLITCH" PROTECTION
CE#, WE#, OE# pulses shorter than 5ns are treated as glitches and will not be regarded as an effective write
cycle.
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MX29LV160D T/B
LOGICAL INHIBIT
A valid write cycle requires both CE# and WE# at Vil with OE# at Vih. Write cycle is ignored when either CE# at
Vih, WE# a Vih, or OE# at Vil.
POWER-UP SEQUENCE
Upon power up, MX29LV160D T/B is placed in read array mode. Furthermore, program or erase operation will
begin only after successful completion of specified command sequences.
POWER-UP WRITE INHIBIT
When WE#, CE# is held at Vil and OE# is held at Vih during power up, the device ignores the first command on
the rising edge of WE#.
POWER SUPPLY DECOUPLING
A 0.1uF capacitor should be connected between the Vcc and GND to reduce the noise effect.
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MX29LV160D T/B
COMMAND OPERATIONS
TABLE 3. MX29LV160D T/B COMMAND DEFINITIONS
Command
1st Bus
Cycle
2nd Bus
Cycle
3rd Bus
Cycle
4th Bus
Cycle
5th Bus
Cycle
6th Bus
Cycle
Read Mode Reset Mode
Addr
Data
Addr
Data
Addr
Data
Addr
XXX
F0
Data
C2h
C2h
Automatic Select
Device ID
Word
Byte
555
AAA
AA
AA
2AA
555
55
55
555
AAA
90
90
X01
X02
ID
Sector Protect Verify
Word
Byte
555
AAA
AA
AA
2AA
555
55
55
555
AAA
90
90
(Sector)X02 (Sector)X04
ID
00/01
00/01
Addr
Data
Addr
Data
Program
Command
1st Bus
Cycle
2nd Bus
Cycle
3rd Bus
Cycle
4th Bus
Cycle
5th Bus
Cycle
6th Bus
Cycle
Addr
Data
Manifacture ID
Word
Byte
555
AAA
AA
AA
2AA
555
55
55
555
AAA
90
90
X00
X00
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Chip Erase
Sector Erase
CFI Read
Word
Byte
Word
Byte
Word
Byte
Word
Byte
555
AA
2AA
55
555
A0
Addr
Data
AAA
AA
555
55
AAA
A0
Addr
Data
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
555
AA
2AA
55
555
80
555
AA
2AA
55
Sector
30
AAA
AA
555
55
AAA
80
AAA
AA
555
55
Sector
30
55
98
AA
98
Erase
Erase
Suspend Resume
Byte/
Byte/
Word
Word
XXX
XXX
B0
30
Notes:
1. Device ID : MX29LV160DT: 22C4; MX29LV160DB: 2249.
2. For sector protect verify result, XX00h/00h means sector is not protected, XX01h/01h means sector has been
protected.
3. Sector Protect command is valid during Vhv at RESET# pin, Vih at A1 pin and Vil at A0, A6 pins. The last Bus
cyc is for protect verify.
4.It is not allowed to adopt any other code which is not in the above command definition table.
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MX29LV160D T/B
COMMAND OPERATIONS (cont'd)
AUTOMATIC PROGRAMMING OF THE MEMORY ARRAY
The MX29LV160D T/B provides the user the ability to program the memory array in Byte mode or Word mode. As
long as the users enters the correct cycle defined in the Table 3 (including 2 unlock cycles and the A0h program
command), any byte or word data provided on the data lines by the system will automatically be programmed
into the array at the specified location.
After the program command sequence has been executed, the internal write state machine (WSM) automatically
executes the algorithms and timings necessary for programming and verification, which includes generating suitable program pulses, checking cell threshold voltage margins, and repeating the program pulse if any cells do
not pass verification or have low margins. The internal controller protects cells that do pass verification and margin tests from being over-programmed by inhibiting further program pulses to these passing cells as weaker cells
continue to be programmed.
With the internal WSM automatically controlling the programming process, the user only needs to enter the program command and data once.
Programming will only change the bit status from "1" to "0". It is not possible to change the bit status from "0" to
"1" by programming. This can only be done by an erase operation. Furthermore, the internal write verification
only checks and detects errors in cases where a "1" is not successfully programmed to "0".
Any commands written to the device during programming will be ignored except hardware reset, which will terminate the program operation after a period of time no more than Tready1. When the embedded program algorithm
is complete or the program operation is terminated by a hardware reset, the device will return to Read mode.
After the embedded program operation has begun, the user can check for completion by reading the following
bits in the status register:
Status
In progress *3
Finished
Exceed time limit
Q7
Q7#
Q7
Q7#
Q6
Toggling
Stop toggling
Toggling
Q5
0
0
1
RY/BY# *2
0
1
0
*1: When an attempt is made to program a protected sector, the program operation will abort thus preventing
any data changes in the protected sector. Q7 will output complement data and Q6 will toggle briefly (1us or less)
before aborting and returning the device to Read mode.
*2: RY/BY# is an open drain output pin and should be connected to VCC through a high value pull-up resistor.
*3: The status "in progress" means both program and erase-suspended program mode.
ERASING THE MEMORY ARRAY
There are two types of erase operations performed on the memory array -- Sector Erase and Chip Erase. In the
Sector Erase operation, one or more selected sectors may be erased simultaneously. In the Chip Erase operation, the complete memory array is erased except for any protected sectors.
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MX29LV160D T/B
COMMAND OPERATIONS (cont'd)
SECTOR ERASE
The sector erase operation is used to clear data within a sector by returning all of its memory locations to the
"1" state. It requires six command cycles to initiate the erase operation. The first two cycles are "unlock cycles",
the third is a configuration cycle, the fourth and fifth are also "unlock cycles", and the sixth cycle is the Sector
Erase command. After the sector erase command sequence has been issued, an internal 50us time-out counter
is started. Until this counter reaches zero, additional sector addresses and Sector Erase commands may be issued thus allowing multiple sectors to be selected and erased simultaneously. After the 50us time-out counter
has expired, no new commands will be accepted and the embedded sector erase operation will begin. Note that
the 50us timer-out counter is restarted after every erase command sequence. If the user enters any command
other than Sector Erase or Erase Suspend during the time-out period, the erase operation will abort and the device will return to Read mode.
After the embedded sector erase operation begins, all commands except Erase Suspend will be ignored. The
only way to interrupt the operation is with an Erase Suspend command or with a hardware reset. The hardware
reset will completely abort the operation and return the device to Read mode.
The system can determine the status of the embedded sector erase operation by the following methods:
Status
Q7
Q6
Q5
Q3 (*1)
Q2
RY/BY#(*2)
Time-out period
0
Toggling
0
0
Toggling
0
In progress
0
Toggling
0
1
Toggling
0
Finished
1
Stop toggling
0
1
1
1
Exceeded time limit
0
Toggling
1
1
Toggling
0
Note :
*1.The Q3 status bit is the time-out indicator. When Q3=0, the time-out counter has not yet reached zero and
a new Sector Erase command may be issued to specify the address of another sector to be erased. When
Q3=1, the time-out counter has expired and the Sector Erase operation has already begun. Erase Suspend
is the only valid command that may be issued once the embedded erase operation is underway.
*2. RY/BY# is an open drain output pin and should be connected to VCC through a high value pull-up resistor.
*3. When an attempt is made to erase only protected sector(s), the program operation will abort thus preventing
any data changes in the protected sector(s). Q7 will output its complement data and Q6 will toggle briefly (100us
or less) before aborting and returning the device to Read mode. If unprotected sectors are also specified,
however, they will be erased normally and the protected sector(s) will remain unchanged.
*4. Q2 is a localized indicator showing a specified sector is undergoing erase operation or not. Q2 toggles when
user reads at addresses where the sectors are actively being erased (in erase mode) or to be erased (in erase
suspend mode). When a sector has been completely erased, Q2 stops toggling at the sector even when the
device is still in erase operation for remaining selected sectors. At that circumstance, Q2 will still toggle when
device is read at any other sector that remains to be erased.
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MX29LV160D T/B
COMMAND OPERATIONS (cont'd)
CHIP ERASE
The Chip Erase operation is used erase all the data within the memory array. All memory cells containing a "0"
will be returned to the erased state of "1". This operation requires 6 write cycles to initiate the action. The first
two cycles are "unlock" cycles, the third is a configuration cycle, the fourth and fifth are also "unlock" cycles, and
the sixth cycle initiates the chip erase operation.
During the chip erase operation, no other software commands will be accepted, but if a hardware reset is received or the working voltage is too low, that chip erase will be terminated. After Chip Erase, the chip will automatically return to Read mode.
The system can determine the status of the embedded chip erase operation by the following methods:
Status
In progress
Finished
Exceed time limit
Q7
0
1
0
Q6
Toggling
Stop toggling
Toggling
Q5
0
0
1
Q2
Toggling
1
Toggling
RY/BY#*1
0
1
0
*1: RY/BY# is an open drain output pin and should be connected to VCC through a high value pull-up resistor.
SECTOR ERASE SUSPEND
After beginning a sector erase operation, Erase Suspend is the only valid command that may be issued. If system issues an Erase Suspend command during the 50us time-out period following a Sector Erase command, the
time-out period will terminate immediately and the device will enter Erase-Suspended Read mode. If the system
issues an Erase Suspend command after the sector erase operation has already begun, the device will not enter
Erase-Suspended Read mode until Tready1 time has elapsed. The system can determine if the device has entered the Erase-Suspended Read mode through Q6, Q7, and RY/BY#.
After the device has entered Erase-Suspended Read mode, the system can read or program any sector(s) except those being erased by the suspended erase operation. Reading any sector being erased or programmed
will return the contents of the status register. Whenever a suspend command is issued, user must issue a resume command and check Q6 toggle bit status, before issue another erase command. The system can use the
status register bits shown in the following table to determine the current state of the device:
Status
Erase suspend read in erase suspended sector
Erase suspend read in non-erase suspended sector
Erase suspend program in non-erase suspended sector
Q7
1
Data
Q7#
Q6
No toggle
Data
Toggle
Q5
0
Data
0
Q3
N/A
Data
N/A
Q2 RY/BY#
Toggle
1
Data
1
N/A
0
When the device has suspended erasing, user can execute the command sets except sector erase and chip
erase, such as read silicon ID, sector protect verify, program, CFI query and erase resume.
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MX29LV160D T/B
COMMAND OPERATIONS (cont'd)
SECTOR ERASE RESUME
The sector Erase Resume command is valid only when the device is in Erase-Suspended Read mode. After
erase resumes, the user can issue another Ease Suspend command, but there should be a 4ms interval between Ease Resume and the next Erase Suspend command. If the user enters an infinite suspend-resume loop,
or suspend-resume exceeds 1024 times, erase times will increase dramatically.
AUTOMATIC SELECT OPERATIONS
When the device is in Read mode, Erase-Suspended Read mode, or CFI mode, the user can issue the Automatic Select command shown in Table 3 (two unlock cycles followed by the Automatic Select command 90h) to
enter Automatic Select mode. After entering Automatic Select mode, the user can query the Manufacturer ID,
Device ID, Security Sector locked status, or Sector-Group protected status multiple times without issuing a new
Automatic Select command.
While In Automatic Select mode, issuing a Reset command (F0h) will return the device to Read mode (or EaseSuspended Read mode if Erase-Suspend was active).
Another way to enter Automatic Select mode is to use one of the bus operations shown in Table 2-2. BUS OPERATION. After the high voltage (Vhv) is removed from the A9 pin, the device will automatically return to Read
mode or Erase-Suspended Read mode.
AUTOMATIC SELECT COMMAND SEQUENCE
Automatic Select mode is used to access the manufacturer ID, device ID and to verify whether or not a sector is
protected. The automatic select mode has four command cycles. The first two are unlock cycles, and followed by
a specific command. The fourth cycle is a normal read cycle, and user can read at any address any number of
times without entering another command sequence. The reset command is necessary to exit the Automatic Select mode and back to read array. The following table shows the identification code with corresponding address.
Manufacturer ID
Device ID
Sector Protect Verify
Word
Byte
Word
Byte
Word
Byte
Address (Hex)
X00
X00
X01
X02
(Sector address) X 02
(Sector address) X 04
Data (Hex)
00C2
C2
22C4/2249
C4/49
0000/0001
00/01
Representation
Top/Bottom Boot Sector
Top/Bottom Boot Sector
Unprotected/protected
Unprotected/protected
After entering automatic select mode, no other commands are allowed except the reset command.
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MX29LV160D T/B
COMMAND OPERATIONS (cont'd)
READ MANUFACTURER ID OR DEVICE ID
The Manufacturer ID (identification) is a unique hexadecimal number assigned to each manufacturer by the JEDEC committee. Each company has its own manufacturer ID, which is different from the ID of all other companies. The number assigned to Macronix is C2h.
The Device ID is a unique hexadecimal number assigned by the manufacturer for each one of the flash devices
made by that manufacturer.
The above two ID types are stored in a 16-bit register on the flash device -- eight bits for each ID. This register is
normally read by the user or by the programming machine to identify the manufacturer and the specific device.
After entering Automatic Select mode, performing a read operation with A1 & A0 held LOW will cause the device
to output the Manufacturer ID on the Data I/O (Q7 to Q0) pins. Performing a read operation with A1 LOW and A0
HIGH will cause the device to output the Device ID.
VERIFY SECTOR GROUP PROTECTION
After entering Automatic Select mode, performing a read operation with A1 held HIGH and A0 held LOW and the
address of the sector to be checked applied to A19 to A12, data bit Q0 will indicate the protected status of the
addressed sector. If Q0 is HIGH, the sector is protected. Conversely, if Q0 is LOW, the sector is unprotected.
RESET
In the following situations, executing reset command will reset device back to read array mode:
• Among erase command sequence (before the full command set is completed)
• Sector erase time-out period
• Erase fail (while Q5 is high)
• Among program command sequence (before the full command set is completed, erase-suspended program
included)
• Program fail (while Q5 is high, and erase-suspended program fail is included)
• Read silicon ID mode
• Sector protect verify
• CFI mode
While device is at the status of program fail or erase fail (Q5 is high), user must issue reset command to reset
device back to read array mode. While the device is in read silicon ID mode, sector protect verify or CFI mode,
user must issue reset command to reset device back to read array mode.
When the device is in the progress of programming (not program fail) or erasing (not erase fail), device will ignore reset command.
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25
MX29LV160D T/B
COMMON FLASH MEMORY INTERFACE (CFI) MODE
QUERY COMMAND AND COMMON FLASH INTERFACE (CFI) MODE
MX29LV160D T/B features CFI mode. Host system can retrieve the operating characteristics, structure and
vendor-specified information such as identifying information, memory size, byte/word configuration, operating
voltages and timing information of this device by CFI mode. If the system writes the CFI Query command "98h",
to address "55h"/"AAh" (depending on Word/Byte mode), the device will enter the CFI Query Mode, any time the
device is ready to read array data. The system can read CFI information at the addresses given in Table 4.
Once user enters CFI query mode, user can not issue any other commands except reset command. The reset
command is required to exit CFI mode and go back to the mode before entering CFI. The system can write the
CFI Query command only when the device is in read mode, erase suspend, standby mode or automatic select
mode.
Table 4-1. CFI mode: Identification Data Values
(All values in these tables are in hexadecimal)
Address (h) Address (h)
Description
Data (h)
(Word Mode) (Byte Mode)
10
20
0051
Query-unique ASCII string "QRY"
11
22
0052
12
24
0059
13
26
0002
Primary vendor command set and control interface ID code
14
28
0000
15
2A
0040
Address for primary algorithm extended query table
16
2C
0000
17
2E
0000
Alternate vendor command set and control interface ID code
18
30
0000
19
32
0000
Address for alternate algorithm extended query table
1A
34
0000
Table 4-2. CFI Mode: System Interface Data Values
Address (h) Address (h)
(Word Mode) (Byte Mode)
1B
36
Description
Vcc supply minimum program/erase voltage
Data (h)
0027
Vcc supply maximum program/erase voltage
1C
38
0036
VPP supply minimum program/erase voltage
1D
3A
0000
VPP supply maximum program/erase voltage
1E
3C
0000
1F
3E
0004
20
40
0000
21
42
000A
Typical timeout for full chip erase, 2 ms
22
44
0000
n
23
46
0005
24
48
0000
25
4A
0004
26
4C
0000
n
Typical timeout per single word/byte write, 2 us
n
Typical timeout for maximum-size buffer write, 2 us
n
Typical timeout per individual block erase, 2 ms
n
Maximum timeout for word/byte write, 2 times typical
n
Maximum timeout for buffer write, 2 times typical
n
Maximum timeout per individual block erase, 2 times typical
n
Maximum timeout for chip erase, 2 times typical
P/N:PM1315
REV. 1.2, DEC. 22, 2011
26
MX29LV160D T/B
Table 4-3. CFI Mode: Device Geometry Data Values
Address (h) Address (h)
(Word Mode) (Byte Mode)
27
4E
Description
Device size = 2n in number of bytes (MX29LV160D)
Flash device interface description (02=asynchronous x8/x16)
Maximum number of bytes in buffer write = 2n (not support)
Number of erase regions within device
Index for Erase Bank Area 1
[2E,2D] = # of same-size sectors in region 1-1
[30, 2F] = sector size in multiples of 256-bytes
Index for Erase Bank Area 2
Index for Erase Bank Area 3
Index for Erase Bank Area 4 (for MX29LV160D)
P/N:PM1315
Data (h)
0015
28
50
0002
29
52
0000
2A
54
0000
2B
56
0000
2C
58
0004
2D
5A
0000
2E
5C
0000
2F
5E
0040
30
60
0000
31
62
0001
32
64
0000
33
66
0020
34
68
0000
35
6A
0000
36
6C
0000
37
6E
0080
38
70
0000
39
72
001E
3A
74
0000
3B
76
0000
3C
78
0001
REV. 1.2, DEC. 22, 2011
27
MX29LV160D T/B
Table 4-4. CFI Mode: Primary Vendor-Specific Extended Query Data Values
Address (h) Address (h)
(Word Mode) (Byte Mode)
40
80
Description
Query - Primary extended table, unique ASCII string, PRI
Data (h)
0050
41
82
0052
42
84
0049
Major version number, ASCII
43
86
0031
Minor version number, ASCII
44
88
0030
Unlock recognizes address (0= recognize, 1= don't recognize)
45
8A
0000
Erase suspend (2= to both read and program)
46
8C
0002
Sector protect (N= # of sectors/group)
47
8E
0001
Temporary sector unprotect (1=supported)
48
90
0001
Sector protect/Chip unprotect scheme
49
92
0004
Simultaneous R/W operation (0=not supported)
4A
94
0000
Burst mode (0=not supported)
4B
96
0000
Page mode (0=not supported)
4C
98
0000
Minimum acceleration supply (0= not supported), [D7:D4] for volt,
[D3:D0] for 100mV
4D
9A
00A5
Maximum acceleration supply (0= not supported), [D7:D4] for volt,
[D3:D0] for 100mV
4E
9C
00B5
Top/Bottom boot block indicator
02h=bottom boot device 03h=top boot device
4F
9E
0002/0003
P/N:PM1315
REV. 1.2, DEC. 22, 2011
28
MX29LV160D T/B
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM STRESS RATINGS
Surrounding Temperature with Bias
Storage Temperature
Voltage Range
VCC
RESET#, A9 and OE#
The other pins
Output Short Circuit Current (less than one second)
-65oC to +125oC
-65oC to +150oC
-0.5V to +4.0 V
-0.5V to +10.5 V
-0.5V to Vcc +0.5V
200 mA
Note:
1. Minimum voltage may undershoot to -2V during transition and for less than 20ns during transitions.
2. Maximum voltage may overshoot to Vcc+2V during transition and for less than 20ns during transitions.
OPERATING TEMPERATURE AND VOLTAGE
Commercial (C) Grade
Surrounding Temperature (TA )
0°C to +70°C
Industrial (I) Grade
Surrounding Temperature (TA )
-40°C to +85°C
VCC Supply Voltages
VCC range
+2.7 V to 3.6 V
P/N:PM1315
REV. 1.2, DEC. 22, 2011
29
MX29LV160D T/B
DC CHARACTERISTICS
Symbol
Description
Min.
Typ.
Max.
Remark
Iilk
Input Leak
± 1.0uA
Iilk9
A9 Leak
Iolk
Output Leak
Icr1
Read Current(5MHz)
5mA
12mA
CE#=Vil,
OE#=Vih
Icr2
Read Current(1MHz)
2mA
4mA
CE#=Vil,
OE#=Vih
Icw
Write Current
15mA
30mA
CE#=Vil,
OE#=Vih,
WE#=Vil
Isb
Standby Current
5uA
15uA
Vcc=Vcc max,
other pins disable
Isbr
Reset Current
5uA
15uA
Vcc=Vccmax,
Reset# enable,
other pins disable
Isbs
Sleep Mode Current
5uA
15uA
Icp1
Accelerated Pgm Current,
WP#/Acc pin(Word/Byte)
5mA
10mA
CE#=Vil,
OE#=Vih
Icp2
Accelerated Pgm Current,
Vcc pin,(Word/Byte)
15mA
30mA
CE#=Vil,
OE#=Vih
35uA
A9=10.5V
± 1.0uA
Vil
Input Low Voltage
-0.5V
0.8V
Vih
Input High Voltage
0.7xVcc
Vcc+0.3V
Vhv
Very High Voltage for hardware
Protect/Unprotect/Accelerated
Program/Auto Select/Temporary Unprotect
9.5V
10.5V
Vol
Output Low Voltage
Voh1
Ouput High Voltage
0.85xVcc
Ioh1=-2mA
Voh2
Ouput High Voltage
Vcc-0.4V
Ioh2=-100uA
Vlko
Low Vcc Lock-out Voltage
0.45V
2.3V
P/N:PM1315
Iol=4.0mA
2.5V
REV. 1.2, DEC. 22, 2011
30
MX29LV160D T/B
SWITCHING TEST CIRCUIT
Vcc
0.1uF
R2
TESTED DEVICE
R1
CL
+3.3V
DIODES=IN3064
OR EQUIVALENT
R1=6.2K ohm
R2=1.6K ohm
Test Condition
Output Load : 1 TTL gate
Output Load Capacitance,CL : 30pF(70ns)/100pF(90ns)
Rise/Fall Times : 5ns
In/Out reference levels :1.5V
SWITCHING TEST WAVEFORM
3.0V
1.5V
1.5V
Test Points
0.0V
INPUT
OUTPUT
P/N:PM1315
REV. 1.2, DEC. 22, 2011
31
MX29LV160D T/B
AC CHARACTERISTICS
Symbol
Description
Min. Typ. Max. Unit
Taa
Valid data output after address
70
ns
Tce
Valid data output after CE# low
70
ns
Toe
Valid data output after OE# low
30
ns
Tdf
Data output floating after OE# high or CE# high
30
ns
Toh
Output hold time from the earliest rising edge of address, CE#, OE#
0
ns
Trc
Read period time
70
ns
Tsrw
Latency Between Read and Write Operation (*Note 1)
45
ns
Twc
Write period time
70
ns
Tcwc
Command write period time
70
ns
Tas
Address setup time
0
ns
Tah
Address hold time
45
ns
Tds
Data setup time
35
ns
Tdh
Data hold time
0
ns
Tvcs
Vcc setup time
200
us
Tcs
Chip enable Setup time
0
ns
Tch
Chip enable hold time
0
ns
Toes
Output enable setup time
0
ns
Read
0
ns
Toggle & Data# Polling
10
ns
Toeh
Toeh
Output enable hold time
Tws
WE# setup time
0
ns
Twh
WE# hold time
0
ns
Tcep
CE# pulse width
35
ns
Tceph
CE# pulse width high
30
ns
Twp
WE# pulse width
35
ns
Twph
WE# pulse width high
30
ns
Tbusy
Program/Erase active time by RY/BY#
Tghwl
Read recover time before write
0
ns
Tghel
Read recover time before write
0
ns
90
ns
Twhwh1 Program operation
Byte
9
300
us
Twhwh1 Program operation
Word
11
360
us
7
210
us
0.7
2
sec
50
us
Twhwh1 Accelerated program operation
Twhwh2 Sector Erase Operation
Tbal
Sector Add hold time
* Note 1: Sampled only, not 100% tested.
P/N:PM1315
REV. 1.2, DEC. 22, 2011
32
MX29LV160D T/B
WRITE COMMAND OPERATION
Figure 1. COMMAND WRITE OPERATION
Tcwc
CE#
Vih
Vil
Tch
Tcs
WE#
Vih
Vil
Toes
OE#
Twph
Twp
Vih
Vil
Addresses
Vih
VA
Vil
Tah
Tas
Tdh
Tds
Vih
Data
Vil
DIN
VA: Valid Address
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REV. 1.2, DEC. 22, 2011
33
MX29LV160D T/B
READ/RESET OPERATION
Figure 2. READ TIMING WAVEFORM
CE#
Tce
Vih
Vil
Tsrw
Vih
WE#
OE#
Vil
Toeh
Tdf
Toe
Vih
Vil
Toh
Taa
Trc
Vih
Addresses
Outputs
ADD Valid
Vil
Voh
HIGH Z
DATA Valid
HIGH Z
Vol
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REV. 1.2, DEC. 22, 2011
34
MX29LV160D T/B
AC CHARACTERISTICS
Item
Description
Setup
Speed
Unit
Trp1
RESET# Pulse Width (During Automatic Algorithms)
MIN
10
us
Trp2
RESET# Pulse Width (NOT During Automatic Algorithms)
MIN
500
ns
Trh
RESET# High Time Before Read
MIN
70
ns
Trb1
RY/BY# Recovery Time (to CE#, OE# go low)
MIN
0
ns
Trb2
RY/BY# Recovery Time (to WE# go low)
MIN
50
ns
Tready1 RESET# PIN Low (During Automatic Algorithms) to Read or Write
MAX
20
us
Tready2 RESET# PIN Low (NOT During Automatic Algorithms) to Read or Write
MAX
500
ns
Figure 3. RESET# TIMING WAVEFORM
Trb1
CE#, OE#
Trb2
WE#
Tready1
RY/BY#
RESET#
Trp1
Reset Timing during Automatic Algorithms
CE#, OE#
Trh
RY/BY#
RESET#
Trp2
Tready2
Reset Timing NOT during Automatic Algorithms
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REV. 1.2, DEC. 22, 2011
35
MX29LV160D T/B
ERASE/PROGRAM OPERATION
Figure 4. AUTOMATIC CHIP ERASE TIMING WAVEFORM
CE#
Tch
Twp
WE#
Twph
Tcs
Tghwl
OE#
Last 2 Erase Command Cycles
Twc
Address
2AAh
VA
SA
Tds
Data
Read Status
Tah
Tas
Tdh
55h
VA
In
Progress Complete
10h
Tbusy
Trb
RY/BY#
SA: 555h for chip erase
P/N:PM1315
REV. 1.2, DEC. 22, 2011
36
MX29LV160D T/B
Figure 5. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART
START
Write Data AAh Address 555h
Write Data 55h Address 2AAh
Write Data 80h Address 555h
Write Data AAh Address 555h
Write Data 55h Address 2AAh
Write Data 10h Address 555h
Data# Polling Algorithm or
Toggle Bit Algorithm
NO
Data=FFh ?
YES
Auto Chip Erase Completed
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REV. 1.2, DEC. 22, 2011
37
MX29LV160D T/B
Figure 6. AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Read Status
CE#
Tch
Twhwh2
Twp
WE#
Twph
Tcs
Tghwl
OE#
Tbal
Last 2 Erase Command Cycles
Twc
Address
Tas
Sector
Address 0
2AAh
Tds
Data
Tdh
55h
Sector
Address 1
Sector
Address n
Tah
VA
VA
In
Progress Complete
30h
30h
Tbusy
30h
Trb
RY/BY#
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REV. 1.2, DEC. 22, 2011
38
MX29LV160D T/B
Figure 7. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART
START
Write Data AAh Address 555h
Write Data 55h Address 2AAh
Write Data 80h Address 555h
Write Data AAh Address 555h
Write Data 55h Address 2AAh
Write Data 30h Sector Address
Last Sector
to Erase ?
NO
YES
Data# Polling Algorithm or
Toggle Bit Algorithm
Data=FFh ?
NO
YES
Auto Sector Erase Completed
P/N:PM1315
REV. 1.2, DEC. 22, 2011
39
MX29LV160D T/B
Figure 8. ERASE SUSPEND/RESUME FLOWCHART
START
Write Data B0h
Toggle Bit checking Q6
NO
ERASE SUSPEND
not toggled ?
YES
Read Array or
Program
Reading or
NO
Programming End ?
YES
Write Data 30h
ERASE RESUME
Continue Erase
Another
Erase Suspend ?
NO
YES
P/N:PM1315
REV. 1.2, DEC. 22, 2011
40
MX29LV160D T/B
Figure 9. AUTOMATIC PROGRAM TIMING WAVEFORM
CE#
Tch
Twhwh1
Twp
WE#
Tcs
Twph
Tghwl
OE#
Last 2 Program Command Cycles
555h
Address
VA
PA
Tds
VA
Tdh
A0h
Data
Last 2 Read Status Cycles
Tah
Tas
Status
PD
DOUT
Tbusy
Trb
RY/BY#
Figure 10. ACCELERATED PROGRAM TIMING DIAGRAM
Vhv
(9.5V ~ 10.5V)
WP#/ACC
Vil or Vih
Vil or Vih
250ns
250ns
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REV. 1.2, DEC. 22, 2011
41
MX29LV160D T/B
Figure 11. CE# CONTROLLED WRITE TIMING WAVEFORM
WE#
Tcep
Tws
Twhwh1 or Twhwh2
Twh
CE#
Tceph
Tghwl
OE#
Tah
Tas
Address
555h
Tds
Data
VA
PA
VA
Tdh
A0h
Status
PD
DOUT
Tbusy
RY/BY#
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REV. 1.2, DEC. 22, 2011
42
MX29LV160D T/B
Figure 12. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART
START
Write Data AAh Address 555h
Write Data 55h Address 2AAh
Write Data A0h Address 555h
Write Program Data/Address
Data# Polling Algorithm or
Toggle Bit Algorithm
next address
Read Again Data:
Program Data?
No
YES
No
Last Word to be
Programed?
YES
Auto Program Completed
P/N:PM1315
REV. 1.2, DEC. 22, 2011
43
MX29LV160D T/B
SECTOR PROTECT/CHIP UNPROTECT
Figure 13. SECTOR PROTECT/CHIP UNPROTECT WAVEFORM (RESET# Control)
150us: Sector Protect
15ms: Chip Unprotect
1us
CE#
WE#
OE#
Verification
Data
60h
SA, A6
A1, A0
60h
40h
VA
VA
Status
VA
Vhv
RESET#
Vih
VA: valid address
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REV. 1.2, DEC. 22, 2011
44
MX29LV160D T/B
Figure 14. IN-SYSTEM SECTOR PROTECT WITH RESET#=Vhv
START
Retry count=0
RESET#=Vhv
Wait 1us
Temporary Unprotect Mode
No
First CMD=60h?
Yes
Write Sector Address
with [A6,A1,A0]:[0,1,0]
data: 60h
Wait 150us
Reset
PLSCNT=1
Write Sector Address
with [A6,A1,A0]:[0,1,0]
data: 40h
Retry Count +1
Read at Sector Address
with [A6,A1,A0]:[0,1,0]
No
Retry Count=25?
No
Data=01h?
Yes
Yes
Device fail
Protect another
sector?
Yes
No
Temporary Unprotect Mode
RESET#=Vih
Write RESET CMD
Sector Protect Done
P/N:PM1315
REV. 1.2, DEC. 22, 2011
45
MX29LV160D T/B
Figure 15. CHIP UNPROTECT ALGORITHMS WITH RESET#=Vhv
START
Retry count=0
RESET#=Vhv
Wait 1us
Temporary Unprotect
No
First CMD=60h?
Yes
All sectors
protected?
No
Protect All Sectors
Yes
Write [A6,A1,A0]:[1,1,0]
data: 60h
Wait 15ms
Write [A6,A1,A0]:[1,1,0]
data: 40h
Retry Count +1
Read [A6,A1,A0]:[1,1,0]
No
Retry Count=1000?
Yes
Device fail
No
Data=00h?
Yes
Last sector
verified?
No
Yes
Temporary Unprotect
RESET#=Vih
Write RESET CMD
Chip Unprotect Done
P/N:PM1315
REV. 1.2, DEC. 22, 2011
46
MX29LV160D T/B
Table 5. TEMPORARY SECTOR UNPROTECT
Parameter
Alt
Description
Condition
Speed
Unit
Trpvhh
Tvidr RESET# Rise Time to Vhv and Vhv Fall Time to RESET#
MIN
500
ns
Tvhhwl
Trsp RESET# Vhv to WE# Low
MIN
4
us
Figure 16. TEMPORARY SECTOR UNPROTECT WAVEFORM
Program or Erase Command Sequence
CE#
WE#
Tvhhwl
RY/BY#
Vhv
10V
RESET#
0 or Vih
Vil or Vih
Trpvhh
Trpvhh
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REV. 1.2, DEC. 22, 2011
47
MX29LV160D T/B
Figure 17. TEMPORARY SECTOR UNPROTECT FLOWCHART
Start
Apply Reset# pin Vhv Volt
Enter Program or Erase Mode
Mode Operation Completed
(1) Remove Vhv Volt from Reset#
(2) RESET# = Vih
Completed Temporary Sector
Unprotected Mode
Notes:
1. Temporary unprotect all protected sectors Vhv=9.5~10.5V.
2. After leaving temporary unprotect mode, the previously protected sectors are again protected.
P/N:PM1315
REV. 1.2, DEC. 22, 2011
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MX29LV160D T/B
Figure 18. SILICON ID READ TIMING WAVEFORM
CE#
Vih
Vil
Tce
Vih
WE#
Vil
Toe
Vih
OE#
Tdf
Vil
Toh
Toh
Vhv
Vih
A9
A0/A6
Vil
Vih
Vil
Taa
A1
Taa
Vih
Vil
ADD
DATA
Q7~Q0
Vih
Vil
Vih
Vil
DATA OUT
DATA OUT
C2h
C4h (Top boot)
49h (Bottom boot)
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49
MX29LV160D T/B
WRITE OPERATION STATUS
Figure 19. DATA# POLLING TIMING WAVEFORM (DURING AUTOMATIC ALGORITHM)
Tce
CE#
Tch
WE#
Toe
OE#
Toeh
Tdf
Trc
Address
VA
VA
Taa
Toh
Q7
Complement
Complement
True
Valid Data
Q6~Q0
Status Data
Status Data
True
Valid Data
High Z
High Z
Tbusy
RY/BY#
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50
MX29LV160D T/B
Figure 20. DATA# POLLING ALGORITHM
Start
Read Q7~Q0 at valid address
(Note 1)
Q7 = Data# ?
No
Yes
No
Q5 = 1 ?
Yes
Read Q7~Q0 at valid address
Q7 = Data# ?
(Note 2)
No
Yes
FAIL
Pass
Notes:
1. For programming, valid address means program address.
For erasing, valid address means erase sectors address.
2.Q7 should be rechecked even Q5="1" because Q7 may change simultaneously with Q5.
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51
MX29LV160D T/B
Figure 21. TOGGLE BIT TIMING WAVEFORM (DURING AUTOMATIC ALGORITHM)
Tce
CE#
Tch
WE#
Toe
OE#
Toeh
Tdf
Trc
Address
VA
VA
VA
VA
Taa
Toh
Q6/Q2
Valid Status
(first read)
Valid Status
Valid Data
(second read)
(stops toggling)
Valid Data
Tbusy
RY/BY#
VA : Valid Address
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MX29LV160D T/B
Figure 22. TOGGLE BIT ALGORITHM
Start
Read Q7-Q0 Twice
(Note 1)
NO
Q6 Toggle ?
YES
NO
Q5 = 1?
YES
Read Q7~Q0 Twice
NO
Q6 Toggle ?
YES
Program/Erase fail
Write RESET CMD
PROGRAM/ERASE
Complete
Notes:
1. Read toggle bit twice to determine whether or not it is toggling.
2. Recheck toggle bit because it may stop toggling as Q5 changes to "1".
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MX29LV160D T/B
AC CHARACTERISTICS
WORD/BYTE CONFIGURATION (BYTE#)
Parameter
Telfl/Telfh
Description
Speed Options
-70
-90
5
5
Unit
CE# to BYTE# from L/H
MAX
ns
Tflqz
BYTE# from L to Output Hiz
MAX
25
30
ns
Tfhqv
BYTE# from H to Output Active
MIN
70
90
ns
Figure 23. BYTE# TIMING WAVEFORM FOR READ OPERATIONS (BYTE# switching from byte mode to
word mode)
CE#
OE#
Telfh
BYTE#
Q0~Q14
DOUT
(Q0-Q7)
Q15/A-1
VA
DOUT
(Q0-Q14)
DOUT
(Q15)
Tfhqv
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MX29LV160D T/B
RECOMMENDED OPERATING CONDITIONS
At Device Power-Up
AC timing illustrated in Figure A is recommended for the supply voltages and the control signals at device powerup. If the timing in the figure is ignored, the device may not operate correctly.
Vcc(min)
Vcc
GND
Tvr
Tvcs
Tf
Tce
Tr
Vih
CE#
WE#
Vil
Vih
Vil
Tf
Toe
Tr
Vih
OE#
Vil
Taa
Tr or Tf
ADDRESS
Vih
Valid
Address
Vil
Voh
DATA
Tr or Tf
High Z
Valid
Ouput
Vol
Vih
WP#/ACC
Vil
Figure A. AC Timing at Device Power-Up
Symbol
Parameter
Min.
Max.
Unit
20
500000
us/V
Tvr
Vcc Rise Time
Tr
Input Signal Rise Time
20
us/V
Tf
Input Signal Fall Time
20
us/V
Tvcs
Vcc Setup Time
200
P/N:PM1315
us
REV. 1.2, DEC. 22, 2011
55
MX29LV160D T/B
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Min.
Chip Erase Time
Limits
Typ.
15
Max.
32
0.7
2
Sector Erase Time
Erase/Program Cycles
100,000
Chip Programming Time
Units
sec
sec
Cycles
Byte Mode
18
54
sec
Word Mode
12
36
sec
Word Program Time
11
360
us
Byte Programming Time
9
300
us
Accelerated Program Time
7
210
us
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0V VCC. Programming specifications assume checkboard data pattern.
2. Maximum values are measured at VCC = 3.0 V, worst case temperature. Maximum values are valid up to and
including 100,000 program/erase cycles.
3. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing
the write buffer.
4. Erase/Program cycles comply with JEDEC JESD-47 & JESD 22-A117 standard.
DATA RETENTION
Parameter
Condition
Min.
Data retention
55˚C
20
Max.
Unit
years
LATCH-UP CHARACTERISTICS
Min.
Max.
Input voltage difference with GND on all pins except I/O pins
-1.0V
10.5V
Input voltage difference with GND on all I/O pins
-1.0V
1.5 x Vcc
-100mA
+100mA
Vcc Current
All pins included except Vcc. Test conditions: Vcc = 3.0V, one pin per testing
PIN CAPACITANCE
Parameter Symbol
Parameter Description
CIN2
Control Pin Capacitance
COUT
Output Capacitance
CIN
Test Set
Typ.
Max.
Unit
VIN=0
7.5
9
pF
VOUT=0
8.5
12
pF
VIN=0
6
7.5
pF
Input Capacitance
P/N:PM1315
REV. 1.2, DEC. 22, 2011
56
MX29LV160D T/B
ORDERING INFORMATION
PART NO.
ACCESS
TIME (ns)
Ball Pitch/
Ball Size
PACKAGE
Remark
MX29LV160DTTI-70G
70
48 Pin TSOP (Normal Type)
MX29LV160DBTI-70G
70
48 Pin TSOP (Normal Type)
MX29LV160DTXBI-70G
70
0.8mm/0.3mm
48 Ball CSP(TFBGA) (ball size:0.3mm)
MX29LV160DBXBI-70G
70
0.8mm/0.3mm
48 Ball CSP(TFBGA) (ball size:0.3mm)
MX29LV160DTGBI-70G
70
48 Ball XFLGA (4 x 6 x 0.5mm)
MX29LV160DBGBI-70G
70
48 Ball XFLGA (4 x 6 x 0.5mm)
MX29LV160DTXHI-70G
70
48 Ball WFBGA (4 x 6 x 0.75mm)
MX29LV160DBXHI-70G
70
48 Ball WFBGA (4 x 6 x 0.75mm)
MX29LV160DTXEI-70G
70
0.8mm/0.4mm
48 Ball LFBGA (ball size:0.4mm)
MX29LV160DBXEI-70G
70
0.8mm/0.4mm
48 Ball LFBGA (ball size:0.4mm)
MX29LV160DTXGI-70G*
70
0.8mm/0.4mm
48 Ball TFBGA
(ball size: 0.4mm, height: 1.2mm)
MX29LV160DBXGI-70G*
70
0.8mm/0.4mm
48 Ball TFBGA
(ball size: 0.4mm, height: 1.2mm)
* Advanced Information
P/N:PM1315
REV. 1.2, DEC. 22, 2011
57
MX29LV160D T/B
PART NAME DESCRIPTION
MX 29
LV 160 D T T
I
70 G
OPTION:
G: RoHS Compliant package
SPEED:
70: 70ns
TEMPERATURE RANGE:
C: Commercial (0˚C to 70˚C)
I: Industrial (-40˚C to 85˚C)
PACKAGE:
T: TSOP
X: BGA
XB: TFBGA - 6 x 8 x 1.2mm, Pitch 0.8mm, 0.3mm Ball
XE: LFBGA - 6 x 8 x 1.3mm, Pitch 0.8mm, 0.4mm Ball
XH: WFBGA - 4 x 6 x 0.75mm, Pitch 0.5mm, 0.3mm Ball
XG: TFBGA - 6 x 8 x 1.2mm, Pitch 0.8mm, 0.4mm Ball
GB: XFLGA - 4 x 6 x 0.5mm, Pitch 0.8mm, 0.4mm Ball
BOOT BLOCK TYPE:
T: Top Boot
B: Bottom Boot
REVISION:
D
DENSITY & MODE:
160: 16Mb, x8/x16 Boot Block
TYPE:
LV: 3V
DEVICE:
29:Flash
P/N:PM1315
REV. 1.2, DEC. 22, 2011
58
MX29LV160D T/B
PACKAGE INFORMATION
P/N:PM1315
REV. 1.2, DEC. 22, 2011
59
MX29LV160D T/B
48-Ball TFBGA (for MX29LV160D TXBI/BXBI)
P/N:PM1315
REV. 1.2, DEC. 22, 2011
60
MX29LV160D T/B
48-Ball WFBGA (for MX29LV160D TXHI/BXHI)
P/N:PM1315
REV. 1.2, DEC. 22, 2011
61
MX29LV160D T/B
48-Ball XFLGA (for MX29LV160D TGBI/BGBI)
P/N:PM1315
REV. 1.2, DEC. 22, 2011
62
MX29LV160D T/B
48-Ball LFBGA (for MX29LV160D TXEI/BXEI)
P/N:PM1315
REV. 1.2, DEC. 22, 2011
63
MX29LV160D T/B
48-Ball TFBGA (for MX29LV160D TXGI/BXGI)
P/N:PM1315
REV. 1.2, DEC. 22, 2011
64
MX29LV160D T/B
REVISION HISTORY
Revision No. Description
1.0
1. Changed Icr1 from 7mA(typ.) to 5mA(typ.)
2. Removed "Advanced Information"
1.1
1. Revised data retention from 10 years to 20 years
2. Added TXGI/BXGI ordering information and part name information (TFBGA PACKAGE)
3. Added Tsrw (AC/WAVEFORM, Min. 45ns)
4. Added WP#ACC PIN note
1.2
1. Modified description for RoHS compliance
2. Modified Figure 11. CE# Controlled Write Timing Waveform
P/N:PM1315
Page
P5,30
P5
P5-6,56
P57-58,64
P32,34
P9
P5,58
P42
Date
AUG/11/2008
MAY/18/2009
DEC/22/2011
REV. 1.2, DEC. 22, 2011
65
MX29LV160D T/B
Except for customized products which has been expressly identified in the applicable agreement, Macronix's
products are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or
household applications only, and not for use in any applications which may, directly or indirectly, cause death,
personal injury, or severe property damages. In the event Macronix products are used in contradicted to their
target usage above, the buyer shall take any and all actions to ensure said Macronix's product qualified for its
actual use in accordance with the applicable laws and regulations; and Macronix as well as it’s suppliers and/or
distributors shall be released from any and all liability arisen therefrom.
Copyright© Macronix International Co., Ltd. 2007~2011. All rights reserved.
Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, NBiit, Macronix NBit, eLiteFlash,
XtraROM, Phines, BE-SONOS, KSMC, Kingtech, MXSMIO, Macronix vEE are trademarks or registered
trademarks of Macronix International Co., Ltd. The names and brands of other companies are for identification
purposes only and may be claimed as the property of the respective companies.
For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com
MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.
66
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