BLF7G15LS-200 1. Product profile Power LDMOS transistor 1.1 General description

BLF7G15LS-200 1.  Product profile Power LDMOS transistor 1.1 General description
BLF7G15LS-200
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
1450 MHz to 1550 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
IDq
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(mA)
(V)
(W)
(dB)
(%)
(dBc)
1476 to 1511
1600
28
50
19.5
29
35[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier.
Carrier spacing 5 MHz.
1.2 Features and benefits









Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation (1450 MHz to 1550 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1450 MHz to 1550 MHz frequency range
BLF7G15LS-200
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain
2
gate
3
source
Simplified outline
Symbol
1
1
3
[1]
2
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
BLF7G15LS-200
Name Description
Version
-
SOT502B
earless flanged LDMOST ceramic package; 2 leads
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
65
V
VGS
gate-source voltage
0.5
+13
V
ID
drain current
-
56
A
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
200
C
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-c)
thermal resistance from junction to case
Tcase = 80 C; PL = 50 W;
VDS = 28 V; IDq = 1600 mA
0.30 K/W
6. Characteristics
Table 6.
Characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.7 mA
BLF7G15LS-200#4
Product data sheet
Min
Typ
Max
Unit
65
67
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 270 mA
1.5
1.9
2.3
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
4.2
A
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
2 of 11
BLF7G15LS-200
Power LDMOS transistor
Table 6.
Characteristics …continued
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
42
49
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
420
nA
gfs
forward transconductance
VDS = 10 V; ID = 13.5 A
17
19.3
19.7
S
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 9.45 A
0.012 0.048 0.093 
7. Test information
Table 7.
Functional test information
Mode of operation: 2-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 64 DPCH; f1 = 1473.5 MHz; f2 = 1478.5 MHz; f3 = 1508.5 MHz; f4 = 1513.5 MHz;
RF performance at VDS = 28 V; IDq = 1600 mA; Tcase = 25 C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
Parameter
Conditions
PL(AV)
average output power
Gp
power gain
Min
Typ
Max
Unit
-
50
-
W
PL(AV) = 50 W
18.3
19.5
-
dB
RLin
input return loss
PL(AV) = 50 W
-
8
5.5
dB
D
drain efficiency
PL(AV) = 50 W
27
29
-
%
ACPR
adjacent channel power ratio
PL(AV) = 50 W
-
35
33
dBc
Table 8.
PAR performance
Mode of operation: 1-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 64 DPCH; f1 = 1511 MHz; RF performance at VDS = 28 V; IDq = 1600 mA; Tcase = 25 C;
unless otherwise specified; in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min Typ Max Unit
PARO
output peak-to-average ratio
PL(AV) = 100 W at 0.01 %
probability on CCDF
4.2
4.6
-
dB
7.1 Ruggedness in class-AB operation
The BLF7G15LS-200 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 1600 mA; PL = 150 W (CW); f = 1476 MHz to 1511 MHz.
7.2 Impedance information
Table 9.
Typical impedance information
IDq = 1600 mA; main transistor VDS = 28 V.
ZS and ZL defined in Figure 1.
BLF7G15LS-200#4
Product data sheet
f
(MHz)
ZS
()
ZL
()
1410
0.74 j1.52
3.5 j1.7
1480
0.65 j1.7
4.0 j0.74
1560
0.61 j1.74
3.8 + j0.5
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
3 of 11
BLF7G15LS-200
Power LDMOS transistor
drain
ZL
gate
ZS
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Graphs
014aab253
22
60
(1)
Gain
(dB)
η
(%)
(2)
16
40
10
20
0
4
0
100
200
300
PL (W)
VDS = 28 V; IDq = 1600 mA; f = 1511 MHz.
(1) gain
(2) efficiency
Fig 2.
BLF7G15LS-200#4
Product data sheet
One-tone CW power gain and drain efficiency as function of load power;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
4 of 11
BLF7G15LS-200
Power LDMOS transistor
014aab254
22
60
014aab255
0
(1)
η
(%)
Gain
(dB)
IMD
(dBc)
−20
(1)
40
16
(2)
(2)
−40
(3)
10
20
−60
4
−80
0
0
50
100
150
0
50
100
PL(AV) (W)
150
PL(AV) (W)
VDS = 28 V; IDq = 1600 mA; f = 1511 MHz;
tone spacing 0.1 MHz.
VDS = 28 V; IDq = 1600 mA; f = 1511 MHz;
tone spacing 0.1 MHz.
(1) gain
(1) IMD3
(2) efficiency
(2) IMD5
(3) IMD7
Fig 3.
Two-tone CW power gain and drain efficiency
as function of average load power;
typical values
014aab256
21
50
η
(%)
Gain
(dB)
20
Fig 4.
Two-tone intermodulation distortion as a
function of average load power; typical values
014aab257
−15
ACPR
(dBc)
40
−25
(1)
19
30
(2)
−35
18
20
17
0
50
10
150
100
−45
0
PL (W)
50
100
150
PL (W)
VDS = 28 V; IDq = 1600 mA; f = 1511 MHz;
carrier spacing 5 MHz.
VDS = 28 V; IDq = 1600 mA; f = 1511 MHz;
carrier spacing 5 MHz.
(1) gain
(2) efficiency
Fig 5.
2-carrier W-CDMA power gain and drain
efficiency as function of load power;
typical values
BLF7G15LS-200#4
Product data sheet
Fig 6.
2-carrier W-CDMA adjacent channel power
ratio as function of load power 5 MHz
frequency offset; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
5 of 11
BLF7G15LS-200
Power LDMOS transistor
7.4 Test circuit
BLF7G15L(S)-200
Input Circuit
RO4350 30 Mil
C3
C8
−
R1
+
C5(1)
C10
C11
BLF7G15L-200
Output Circuit
RO4350 30 Mil
C2
C1
BLF7G15L-200
Output Circuit
RO4350 30 Mil
C7
BLF7G15L(S)-200
Input Circuit
RO4350 30 Mil
C6
C9
C4
014aab258
(1) C5 should be mounted under C11.
Rogers RO4350 Printed-Circuit Board (PCB) with r = 3.48 and thickness = 0.765 mm (30 mil).
See Table 10 for list of components. The drawing is not to scale.
The vias can be as a reference to place components.
The above layout shows the test circuit used to measure devices in production. The RF Power and Bas-Station group can
provide a more appropriate application demonstration for specific customer needs.
Fig 7.
Component layout
Table 10. List of components
See Figure 7 for test circuit.
BLF7G15LS-200#4
Product data sheet
Component
Description
Value
Remarks
C1
multi layer ceramic chip capacitor
10 pF
ATC 800B
C2, C7, C10
multi layer ceramic chip capacitor
47 pF
ATC 800A
C3, C4, C5, C6
multi layer ceramic chip capacitor
10 F
Murata
C8, C9
multi layer ceramic chip capacitor
36 pF
ATC 800B
C11
electrolytic capacitor
470 F; 63 V
R1
chip resistor
15 
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 1 September 2015
Philips 1206
© Ampleon The Netherlands B.V. 2015. All rights reserved.
6 of 11
BLF7G15LS-200
Power LDMOS transistor
8. Package outline
Earless flanged ceramic package; 2 leads
SOT502B
D
A
F
3
D
D1
c
U1
1
L
H
E1
U2
E
2
w2 M D M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
D
E
E1
F
H
L
Q
U1
U2
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
1.70
1.45
20.70
20.45
9.91
9.65
0.25
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.045 0.785
0.035 0.745
0.210
0.170
0.067 0.815
0.057 0.805
D1
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
07-05-09
12-05-02
SOT502B
Fig 8.
0.390
0.010
0.380
Package outline SOT502B
BLF7G15LS-200#4
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
7 of 11
BLF7G15LS-200
Power LDMOS transistor
9. Abbreviations
Table 11.
Abbreviations
Acronym
Description
3GPP
Third Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
CW
Continuous Wave
DPCH
Dedicated Physical CHannel
ESD
ElectroStatic Discharge
LDMOS
Laterally Diffused Metal Oxide Semiconductor
LDMOST
Laterally Diffused Metal Oxide Semiconductor Transistor
PAR
Peak-to-Average power Ratio
RF
Radio Frequency
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
10. Revision history
Table 12.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF7G15LS-200#4
20150901
Product data sheet
-
BLF7G15LS-200 v.3
Modifications:
•
The format of this document has been redesigned to comply with the new identity
guidelines of Ampleon.
•
Legal texts have been adapted to the new company name where appropriate.
BLF7G15LS-200 v.3
20110722
Product data sheet
-
BLF7G15LS-200 v.2
BLF7G15LS-200 v.2
20110301
Preliminary data sheet
-
BLF7G15LS-200 v.1
BLF7G15LS-200 v.1
20100913
Preliminary data sheet
-
-
BLF7G15LS-200#4
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
8 of 11
BLF7G15LS-200
Power LDMOS transistor
11. Legal information
11.1
Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Definition
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
11.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
11.3
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLF7G15LS-200#4
Product data sheet
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
9 of 11
BLF7G15LS-200
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
11.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
12. Contact information
For more information, please visit:
http://www.ampleon.com
BLF7G15LS-200#4
Product data sheet
For sales office addresses, please visit:
http://www.ampleon.com/sales
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
10 of 11
BLF7G15LS-200
Power LDMOS transistor
13. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Impedance information . . . . . . . . . . . . . . . . . . . 3
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon The Netherlands B.V. 2015.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLF7G15LS-200#4
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertisement