2N7592T3 RADIATION HARDENED ... POWER MOSFET ...

2N7592T3 RADIATION HARDENED         ... POWER MOSFET         ...
PD-96925C
2N7592T3
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS67230CM
200V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number
IRHYS67230CM
Radiation Level
100K Rads (Si)
IRHYS63230CM
300K Rads (Si)
RDS(on) I D
0.13Ω 16A
0.13Ω
16A
Low-Ohmic
TO-257AA
International Rectifier’s R6 TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
very low RDS(on) and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
16
10
64
75
0.6
±20
83
16
7.5
9.0
-55 to 150
300 (0.063 in. /1.6 mm from case for 10s)
4.3 (Typical)
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
For footnotes refer to the last page
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1
06/15/10
IRHYS67230CM, 2N7592T3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
200
—
—
V
—
0.19
—
V/°C
—
—
0.13
Ω
2.0
—
11
—
—
—
-9.76
—
—
—
4.0
—
—
10
25
V
mV/°C
S
nA
∆BVDSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
VGS = 12V, ID = 10A Ã
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
42
10
20
15
40
35
15
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1660
206
2.6
—
—
—
Rg
Gate Resistance
1.75
VDS = VGS, ID = 1.0mA
nC
VDS = 10V, IDS = 10A Ã
VDS= 160V ,VGS = 0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 16A
VDS = 100V
ns
VDD = 100V, ID = 16A,
VGS = 12V, RG = 7.5Ω
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
pF
Measured from Drain lead
( 6mm / 0.025 in from package )
to Source lead ( 6mm/ 0.025 in
from package )
VGS = 0V, VDS = 25V
f = 1.0MHz
Ω
f = 1.0MHz, open drain
nH
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
16
64
1.2
300
3.2
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = 16A, VGS = 0V Ã
Tj = 25°C, IF = 16A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
1.67
80
°C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHYS67230CM, 2N7592T3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Units
Test Conditions
V
µA
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20V
VDS=160V, VGS=0V
0.134
Ω
VGS = 12V, ID = 10A
—
0.13
Ω
VGS = 12V, ID = 10A
—
1.2
V
VGS = 0V, ID = 16A
Up to 300K Rads (Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source On-State „
Resistance (Low Ohmic TO-257)
Diode Forward Voltage
„
Min
Max
200
2.0
—
—
—
—
4.0
100
-100
10
—
nA
1. Part numbers IRHYS67230CM and IRHYS63230CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
2
(MeV/(mg/cm ))
Energy
Range
(MeV)
(µm)
VDS (V)
@VGS=
@VGS=
@VGS=
@VGS=
0V
-5V
-10V
-15V
42 ± 5%
2450 ± 5%
205 ± 5%
200
200
200
190
61 ± 5%
825 ± 5%
66 ± 5%
200
200
200
190
90 ± 5%
1470 ± 5%
80 ± 5%
170
170
-
-
Bias VDS (V)
250
200
LET=42 ± 5%
150
LET=61 ± 5%
100
LET=90 ± 5%
50
0
0
-5
-10
-15
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHYS67230CM, 2N7592T3
100
Pre-Irradiation
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
10
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
5.0V
1
60µs PULSE WIDTH
Tj = 25°C
0.1
10
1
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.1
VDS , Drain-to-Source Voltage (V)
2.5
T J = 25°C
VDS = 50V
15
60µs PULSE WIDTH
2
4
6
8
10
12
14
16
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
T J = 150°C
1
10
100
Fig 2. Typical Output Characteristics
100
10
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
5.0V
ID = 16A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRHYS67230CM, 2N7592T3
1.0
RDS(on), Drain-to -Source On Resistance ( Ω)
RDS(on), Drain-to -Source On Resistance (Ω)
Pre-Irradiation
ID = 16A
0.9
0.8
0.7
0.6
0.5
T J = 150°C
0.4
0.3
T J = 25°C
0.2
0.1
0
4
8
12
16
20
1.0
0.9
T J = 150°C
0.8
0.7
0.6
0.5
0.4
TJ = 25°C
0.3
0.2
VGS = 12V
0.1
0
24
0
10
20
VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
40
50
60
70
Fig 6. Typical On-Resistance Vs
Drain Current
250
5.0
ID = 1.0mA
VGS(th) Gate threshold Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
30
ID, Drain Current (A)
240
230
220
210
200
4.5
4.0
3.5
3.0
2.5
2.0
1.5
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
1.0
190
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
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-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
IRHYS67230CM, 2N7592T3
3000
20
VGS = 0V,
f = 100KHz
1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
ID = 16A
VGS, Gate-to-Source Voltage (V)
2400
C, Capacitance (pF)
Pre-Irradiation
Ciss
1800
Coss
1200
600
0
Crss
1
10
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 17
0
100
0
VDS , Drain-to-Source Voltage (V)
20
30
40
50
60
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
16
T J = 150°C
10
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
10
QG, Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
T J = 25°C
1.0
12
8
4
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
VSD , Source-to-Drain Voltage (V)
Fig 11. Typical Source-Drain Diode
Forward Voltage
6
VDS = 160V
VDS = 100V
VDS = 40V
1.2
0
25
50
75
100
125
TC , Case Temperature ( °C)
150
Fig 12. Maximum Drain Current Vs.
Case Temperature
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Pre-Irradiation
IRHYS67230CM, 2N7592T3
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10
100µs
1
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10ms
DC
10
100
EAS , Single Pulse Avalanche Energy (mJ)
160
1000
ID
7.0A
10A
BOTTOM 16A
TOP
120
80
40
0
1000
25
VDS , Drain-to-Source Voltage (V)
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
P DM
0.05
0.02
0.01
t1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
t2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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7
IRHYS67230CM, 2N7592T3
Pre-Irradiation
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T.
RG
IAS
VGS
20V
0.01Ω
tp
+
- VDD
.
A
I AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
12V
50KΩ
.2µF
12V
QGS
.3µF
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
IG
Charge
Fig 17a. Basic Gate Charge Waveform
VDS
Fig 17b. Gate Charge Test Circuit
RD
VDS
90%
VGS
D.U.T.
RG
ID
Current Sampling Resistors
VDD
+
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
8
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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Pre-Irradiation
IRHYS67230CM, 2N7592T3
Footnotes:
À Repetitive Rating; Pulse width limited by
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L = 0.65mH
Peak IL = 16A, VGS = 12V
 ISD ≤ 16A, di/dt ≤ 750A/µs,
VDD ≤ 200V, TJ ≤ 150°C
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — Low-Ohmic TO-257AA (Low Ohmic)
0.13 [.005]
A
10.66 [.420]
10.42 [.410]
3X Ø
3.81 [.150]
3.56 [.140]
16.89 [.665]
16.39 [.645]
13.63 [.537]
13.39 [.527]
1
2
5.08 [.200]
4.83 [.190]
1.14 [.045]
0.89 [.035]
B
10.92 [.430]
10.42 [.410]
3
0.71 [.028]
MAX.
C
15.88 [.625]
12.70 [.500]
2.54 [.100]
2X
3X Ø
0.88 [.035]
0.64 [.025]
Ø 0.50 [.020]
C A
3.05 [.120]
B
NOT ES :
1.
2.
3.
4.
LEAD ASSIGNMENTS
DIMENS IONING & T OLERANCING PER ANS I Y14.5M-1994.
CONT ROLLING DIMENS ION: INCH.
DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA.
1 = DRAIN
2 = SOURCE
3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 06/2010
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