AUIRF7207Q V -20V R

AUIRF7207Q V -20V R
AUTOMOTIVE GRADE
AUIRF7207Q
HEXFET® Power MOSFET
Features

Advanced Process Technology

Low On-Resistance

Logic Level Gate Drive

P-Channel MOSFET

Dynamic dV/dT Rating

150°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free, RoHS Compliant

Automotive Qualified*
S
A
D
1
8
S
2
7
S
3
6
D
G
4
5
D
VDSS
-20V
RDS(on) max
0.06
ID
-5.4A
D
Top View
Description
Specifically designed for Automotive applications, this cellular design
of HEXFET® Power MOSFETs utilizes the latest processing
techniques to achieve low on-resistance per silicon area. This benefit
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device for use in
Automotive and a wide variety of other applications.
Base part number
Package Type
AUIRF7207Q
SO-8
SO-8
Standard Pack
Form
Tape and Reel
Quantity
2500
Orderable Part Number
AUIRF7207QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
VGSM
EAS
TJ
TSTG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy (Thermally Limited) 
Operating Junction and
Storage Temperature Range
Max.
-20
-5.4
-4.3
-43
2.5
1.6
0.02
± 12
-16
140
-55 to + 150
Units
V
A
W
W/°C
V
V
mJ
°C Thermal Resistance
Symbol
RJA
Parameter
Junction-to-Ambient 
Typ.
Max.
Units
–––
50
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
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AUIRF7207Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol
Parameter
Min. Typ. Max.
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20
–––
–––
––– -0.011 –––
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
––– 0.06
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.125
VGS(th)
Gate Threshold Voltage
-0.7
––– -1.6
gfs
Forward Transconductance
8.3
–––
–––
–––
––– -1.0
Drain-to-Source Leakage Current
IDSS
–––
–––
-25
IGSS
Gate-to-Source Forward Leakage
–––
––– -100
Gate-to-Source Reverse Leakage
–––
–––
100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol
Parameter
Min. Typ. Max.
Qg
Total Gate Charge
–––
15
22
Qgs
Gate-to-Source Charge
–––
2.2
3.3
Qgd
Gate-to-Drain ("Miller") Charge
–––
5.7
8.6
td(on)
Turn-On Delay Time
–––
11
–––
tr
Rise Time
–––
24
–––
td(off)
Turn-Off Delay Time
–––
43
–––
Fall Time
–––
41
–––
tf
Input Capacitance
–––
780
–––
Ciss
Coss
Output Capacitance
–––
410
–––
Crss
Reverse Transfer Capacitance
–––
200
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max.
Continuous Source Current
–––
––– -3.1
IS
(Body Diode)
Pulsed Source Current
–––
–––
-43
ISM
(Body Diode) 
VSD
Diode Forward Voltage
–––
––– -1.0
dv/dt
Peak Diode Recovery 
–––
5.0
–––
Reverse Recovery Time
Reverse Recovery Charge
trr Qrr
–––
–––
42
50
63
75
Units
Conditions
V VGS = 0V, ID = -250µA
V/°C Reference to 25°C, ID = -1mA
 VGS = -4.5V, ID = -5.4A 
VGS = -2.7V, ID = -2.7A 
V VDS = VGS, ID = -250µA
S VDS = -10V, ID = -5.4A
VDS = -16V, VGS = 0V
µA
VDS = -16V, VGS = 0V, TJ = 125°C
VGS = 12V
nA
VGS = -12V
Units
Conditions
ID = -5.4A
nC VDS = -10V
VGS = -4.5V
VDD = -10V
ID = -1.0A
ns
RG = 6.0
RD = 10
VGS = 0V
pF VDS = -15V
ƒ = 1.0 MHz
Units
Conditions
MOSFET symbol
A
showing the
integral reverse
A
p-n junction diode.
V TJ = 25°C, IS = -3.1A, VGS = 0V
V/ns TJ = 175°C, IS= -3.1A, VDS = -20V
ns
nC
TJ = 25°C, IF = -3.1A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 9.6mH, RG = 25, IAS = -5.4A.
ISD  -5.4A, di/dt  -79A/µs, VDD  V(BR)DSS, TJ  150°C.
Pulse width  300µs; duty cycle  2%.
When mounted on 1 inch square copper board, t<10 sec.
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AUIRF7207Q
100
100
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
TOP
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
TOP
10
-2.25V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
-2.25V
10
2.0
TJ = 25 ° C
TJ = 150 °C
10
V DS = -10V
20µs PULSE WIDTH
5.0
RDS(on), Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current (A)
100
4.0
6.0
ID = -5.4A
1.5
1.0
0.5
0.0
-60 -40 -20
-VGS, Gate-to-Source Voltage (V)
-VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
10
1200
Ciss
800
Coss
0
Crss
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
0
20 40
60
80 100 120 140 160
( °C)
Fig. 4 Normalized On-Resistance vs. Temperature
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
400
VGS = -10V
TJ, Junction Temperature
Fig. 3 Typical Transfer Characteristics
1600
10
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
3.0
1
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
1
2.0
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
ID = -5.4A
VDS =-10V
8
6
4
2
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
5
10
15
20
25
30
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
2015-11-16
AUIRF7207Q
100
100
TJ = 150 ° C
-IID, Drain Current (A)
-ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
TJ = 25 ° C
1
0.1
0.4
V GS = 0 V
0.6
0.7
0.9
1.1
1.2
100us
10
1ms
1
1.4
TA = 25 °C
TJ = 150 °C
Single Pulse
1
10
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
EAS , Single Pulse Avalanche Energy (mJ)
6.0
-ID, Drain Current (A)
5.0
4.0
3.0
2.0
1.0
25
50
75
100
TC, Case Temperature
100
-VDS, Drain-to-Source Voltage (V)
-V SD,Source-to-Drain Voltage (V)
0.0
10ms
125
150
( °C)
400
TOP
BOTTOM
300
200
100
0
25
50
75
100
125
Starting T J, Junction Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
ID
-2.4A
-4.3A
-5.4A
150
( °C)
Fig 10. Maximum Avalanche Energy vs. Drain Current
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
PDM
0.02
1
t1
0.01
t2
Notes:
1. Duty factor D =t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
SINGLE PULSE
(T HERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRF7207Q
Fig 14. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET® Power MOSFETs
Fig 14a. Unclamped Inductive Test Circuit
Fig 15a. Switching Time Test Circuit
Fig 16a. Gate Charge Test Circuit
5
Fig 14b. Unclamped Inductive Waveforms
Fig 15b. Switching Time Waveforms
Fig 16b. Gate Charge Waveform
2015-11-16
AUIRF7207Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
D IM
B
8
6
7
6
M IN
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e 1
.025 BASIC
0.635 B ASIC
5
H
E
1
6X
2
3
0.25 [ .010]
4
A
e
e1
0.25 [ .010]
A1
C
A
M AX
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
8X b
M ILLIM ETERS
M AX
5
A
IN C H ES
M IN
y
0.10 [ .004]
B
8X L
8X c
7
F O O T P R IN T
N O TES:
1 . D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 .
8 X 0 .7 2 [ .0 2 8 ]
2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R
3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] .
4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A .
5
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S .
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 . 1 5 [ . 0 0 6 ] .
6
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S .
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 . 2 5 [ . 0 1 0 ] .
7
D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O
A SU B STR ATE.
6 .4 6 [ .2 5 5 ]
3 X 1 .2 7 [ .0 5 0 ]
8 X 1 .7 8 [ .0 7 0 ]
SO-8 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF7207Q
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF7207Q
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
Qualification Level
Moisture Sensitivity Level
SO-8
Machine Model
ESD
Human Body Model
Charged Device Model
MSL1
Class M1B (+/- 100V)
†
AEC-Q101-002
Class H1A (+/- 500V)†
AEC-Q101-001
Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
RoHS Compliant
† Highest passing voltage.
Revision History
Date
4/3/2014
11/16/2015
Comments
 Added "Logic Level Gate Drive" bullet in the features section on page 1
 Updated datasheet with corporate template
 Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
8
2015-11-16
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